Nexperia Announced Availability of 1200 V SiC MOSFETs in D2PAK-7 SMD Package

Nexperia announced that it is now offering its industry leading 1200 V silicon carbide (SiC) MOSFETs in D²PAK-7 surface mount device (SMD) packaging, with a choice of 30, 40, 60, and 80 mΩ R_DSon values. This announcement follows on from Nexperia’s late-2023 release of two discrete SiC MOSFETs in 3 and 4-pin TO-247 packaging and is the latest offering in a series which will see its SiC MOSFET portfolio swiftly expand to include devices with R_DSon values of 17, 30, 40, 60 and 80 mΩ in flexible package options. 

With the release of the NSF0xx120D7A0, Nexperia is addressing the growing market demand for high performance SiC switches in SMD packages like D²PAK-7, which is becoming increasingly popular in various industrial applications including electric vehicle (EV) charging (charge pile, offboard charging), uninterruptible power supplies (UPS) and inverters for solar and energy storage systems (ESS).

It is also further testimony to Nexperia’s successful strategic partnership with Mitsubishi Electric Corporation (MELCO), which has seen the two companies join forces to push the energy efficiency and electrical performance of SiC wide bandgap semiconductors to the next level, while additionally future-proofing production capacity for this technology in response to ever growing market demand.

R_DSon is a critical performance parameter for SiC MOSFETs because it impacts conduction power losses. However, many manufacturers concentrate on the nominal value, neglecting the fact that it can increase by more than 100% as device operating temperatures rise, resulting in considerable conduction losses.

Nexperia identified this as a limiting factor in the performance of many currently available SiC devices and leveraged the features of its innovative process technology to ensure that its new SiC MOSFETs offer industry-leading temperature stability, with the nominal value of R_DSon increasing by only 38% over an operating temperature range from 25 °C to 175 °C.

Tightest threshold voltage, V_GS(th) specification, allows these discrete MOSFETs to offer balanced current-carrying performance when connected in parallel. Furthermore, low body diode forward voltage (V_SD) is a parameter which increases device robustness and efficiency, while also relaxing the dead-time requirement during freewheeling operation.

Original – Nexperia