Toshiba Started Mass Production of a 3rd Gen 1200 V SiC MOSFET Module

Toshiba Electronic Devices & Storage Corporation has started mass production of a 3rd generation silicon carbide (SiC) 1200 V and drain current (DC) rating 400 A of SiC MOSFET module “MG400Q2YMS3” for industrial equipment and has expanded its lineup.

The new product MG400Q2YMS3 offers low conduction loss with low drain-source on-voltage (sense) of 0.9 V (typ.). It also offers low switching loss with both turn-on switching loss and turn-off switching loss of 13 mJ (typ.). These help to reduce power loss of equipment and the size of cooling device.

MG400Q2YMS3 has a low stray inductance of 12 nH (typ.) and is capable of high-speed switching. In addition, it suppresses surge voltage in switching operation. Thus, it is available for high frequency isolated DC-DC converter.

Toshiba’s SiC MOSFET module of 2-153A1A package has a lineup of five existing products, MG250YD2YMS3 (2200 V / 250 A), MG400V2YMS3 (1700 V / 400 A), MG250V2YMS3 (1700 V / 250 A), and MG600Q2YMS3 (1200 V / 600 A), including new products. This provides a wider range of product selection.

Toshiba will continue to meet the needs for high efficiency and the downsizing of industrial equipment.

Applications

Industrial equipment

• Auxiliary power supply for railway vehicles
• Renewable energy power generation systems
• Motor control equipment for industrial equipment
• High frequency DC-DC converters, etc.

Features

• Low drain-source on-voltage (sense):
  V_DS(on)sense=0.9 V (typ.) (I_D=400 A, V_GS=+20 V, T_ch=25 °C)
• Low turn-on switching loss:
  E_on=13 mJ (typ.) (V_DD=600 V, I_D=400 A, T_ch=150 °C)
• Low turn-off switching loss:
  E_off=13 mJ (typ.) (V_DD=600 V, I_D=400 A, T_ch=150 °C)
• Low stray inductance:
  L_sPN=12 nH (typ.)

Original – Toshiba