Wide bandgap (WBG) semiconductors are the next generation of power electronics. SiC and GaN based systems are the focus of an international cooperation between ECPE
Event Details
Wide bandgap (WBG) semiconductors are the next generation of power electronics. SiC and GaN based systems are the focus of an international cooperation between ECPE and Japanese partners that initially spurred the establishment of this tutorial. The wide spread programme is supposed to convey practical know-how to engineers working with SiC and GaN devices.
Efficient system integration is the key to exploiting the full potential of WBG semiconductors. Power electronics developers need to take into account that high switching speeds, high frequencies and high power densities place special demands on the system components.
This 2-day tutorial addresses all aspects of WBG system integration from the choice of semiconductor components and design options to how to cope with parasitics, EMC and inductance at high switching frequencies. Another topic is test methods – both for electric tests of new power semiconductor components as for the robustness and reliability of modules and systems.
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Time
23 (Wednesday) 8:45 am - 24 (Thursday) 4:30 pm(GMT+02:00)View in my time
Location
STMicroelectronics
Conference Room Building L7 Stradale Primosole 50, 95121 Catania, Italy