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LATEST NEWS / PRODUCT & TECHNOLOGY2 Min Read
ROHM has released N-channel MOSFETs – RF9x120BKFRA / RQ3xxx0BxFRA / RD3x0xxBKHRB – featuring low ON-resistance ideal for a variety of automotive applications, including motors for doors and seat positioning, as well as LED headlights. Sales have begun with 10 models across 3 package types, with plans to expand the lineup in the future.
The automotive sector is seeing a surge in the number of electronic components, driven by the demand for enhanced safety and convenience. At the same time, there is a pressing need for improved power efficiency to optimize fuel and electricity consumption. Especially for MOSFETs essential for switching applications in automotive systems, there is a growing requirement for lower ON resistance to minimize loss and heat generation.
ROHM, which has been supplying low ON-resistance MOSFETs for consumer and industrial equipment, has now extended this technology to the automotive sector. Adapting cutting-edge medium voltage processes to meet the stringent reliability requirements of automotive products allowed us to develop 10 N-channel MOSFET models characterized by low ON resistance.
Offered in voltage ratings of 40V, 60V, and 100V, the new products incorporate a split-gate structure to achieve low ON-resistance, contributing to higher efficiency operation in automotive applications. All models are qualified under the AEC-Q101 automotive reliability standard, guaranteeing exceptional high reliability.
Users can select from among three package types, depending on the application. For space-constrained sets like Advanced Driver Assistance Systems (ADAS), the compact DFN2020Y7LSAA (2.0mm × 2.0mm) and HSMT8AG (3.3mm × 3.3mm) packages are ideal. For automotive power applications, the widely used TO-252 (DPAK) package (6.6mm × 10.0mm) is also available. In addition, ROHM has further enhanced mounting reliability by utilizing wettable flank technology for the DFN2020Y7LSAA package and gull-wing leads for the TO-252 package.
Going forward, ROHM plans to expand its lineup of medium-voltage N-channel MOSFETs to provide even greater miniaturization and higher efficiency in automotive applications. Mass production of the DFN3333 (3.3mm × 3.3mm) and HPLF5060 (5.0mm × 6.0mm) packages is scheduled for October 2024, followed by 80V products in 2025. P-channel products are also scheduled for future release.
Original – ROHM
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LATEST NEWS2 Min Read
Tata Group, a global enterprise headquartered in India, and Analog Devices, Inc. announced a strategic alliance to explore potential cooperative manufacturing opportunities.
Tata Electronics, Tata Motors, and Tejas Networks signed a Memorandum of Understanding (MoU) with ADI to enhance strategic and business cooperation, explore opportunities for semiconductor manufacturing in India, and use ADI’s products in Tata applications like electric vehicles and network infrastructure. The companies also agree to have strategic roadmap alignment discussions.
The joint effort is expected to be mutually beneficial and is a significant step in establishing a robust electronics manufacturing ecosystem in India both for domestic and global consumption.
N Chandrasekaran, Chairman of Tata Sons, said, “The Tata Group is deeply committed to pioneering a thriving semiconductor industry in India. We are excited to partner with ADI across the semiconductor value chain and explore collaboration between ADI and Tata Group companies to design and offer advanced products to serve our customers.”
“At ADI, we are thrilled to join efforts with the Tata Group in advancing India’s semiconductor ecosystem. This joint effort aligns with our commitment to innovation and sustainable growth in the region. By combining our real-world semiconductor solutions and software expertise with Tata’s vision and capabilities, we can accelerate the development of cutting-edge technologies, from electric vehicles to next-generation network infrastructure. Together, we are not only building a stronger semiconductor ecosystem but also shaping the future of global electronics manufacturing,” said Vincent Roche, CEO and Chair at ADI.
As previously announced, Tata Electronics is investing in its own facilities by building India’s first fab in Dholera, Gujarat with a total investment of $11 billion. In addition, Tata Electronics will be investing another $3 billion in a greenfield facility in Jagiroad, Assam for the assembly and testing of semiconductor chips.
Tata Electronics and ADI intend to explore opportunities to manufacture ADI’s products in Tata Electronics’ fab in Gujarat and OSAT in Assam. Tata Motors and ADI intend to explore opportunities for engagement in electronics hardware components for energy storage solutions and power electronics in both commercial and passenger vehicle businesses. Tejas Networks and ADI intend to explore opportunities for engagement in electronics hardware components for network infrastructure.
Original – Analog Devices
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LATEST NEWS2 Min Read
Together with 59 other leading Saxon companies, Siltronic AG is supporting the appeal “Companies for Saxony’s Future” for the resolute expansion of renewable energies. The aim of the initiative is to secure the competitiveness of Saxony’s economy and to strengthen the state as an attractive region for companies.
“We are a leading global manufacturer of hyperpure silicon wafers for the semiconductor industry and sustainability is deeply rooted in our corporate DNA. Our ambitious climate goals are one example: We aim to increase our use of renewable energy to 60 percent by 2030 and 100 percent by 2045, with the goal of achieving near-zero emissions. To achieve this, we need the necessary infrastructure and sufficient green electricity at competitive prices,” explained the Freiberg site manager of Siltronic AG, Dr. Christian Heedt, at a press conference on the publication of the appeal “Companies for Saxony’s Future – The Free State Needs the Energy Transition”.
With this paper, the companies are addressing the newly formed Saxon state government. In it, they refer to the need for a stable and sustainable energy supply through the expansion of renewable energies and the necessary infrastructure. “Consistent action today will sustainably and successfully position Saxony as a business region in international competition in the future,” continues Heedt.
The signatories of the joint appeal are also calling on the Saxon state government to strengthen political support for the energy transition and drive forward the expansion of the grid. There needs to be broad social acceptance for renewable energies. According to the paper, this is crucial to achieve the climate targets in Saxony and beyond and to ensure the competitiveness of Saxony as a business region.
The initiators include companies from numerous sectors, including steel, chemicals, pharmaceuticals, paper, semiconductors, energy services, municipal utilities, and automotive suppliers. In total, the companies account for more than 12,000 jobs. The Dresden and Chemnitz Chambers of Industry and Commerce are also supporting the appeal.
You can find further information at: www.unternehmen-zukunft-sachsen.de
Original – Siltronic
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LATEST NEWS1 Min Read
Silicon Catalyst, an incubator + accelerator exclusively focused on accelerating semiconductor solutions, announced that TD Shepherd has joined as a new member of its In-Kind Partner ecosystem. This partnership aims to enhance the support available to semiconductor startups, driving innovation and growth.
Specializing in semiconductors, semiconductor equipment and materials, photonics, EDA, AI/ML, and embedded programming, with a global team of seasoned professionals, including engineers and senior bankers, TD Shepherd brings a unique blend of corporate finance expertise and hands-on experience to the Silicon Catalyst’s portfolio companies.
TD Shepherd has a rich network of Dutch, European, Asian, and US venture funds, PE parties, and corporate venture funds focused on the deep-tech sector, and is a member of global organizations like GSA and IEEE, with turn-key partnerships with Microtech Ventures, HighTech Startbahn, and corporate finance companies, ensuring quick access to relevant parties.
As an IKP member, TD Shepherd offers startup training services on key topics such as Due Diligence, Ambition & Compass, and Round Preparation. The intensive training sessions are designed to help deep-tech startups navigate complex financial landscapes and create sustainable growth models.
For more information, visit https://tdshepherd.com and https://siliconcatalyst.com
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GaN / LATEST NEWS / Si / SiC / WBG2 Min Read
JEDEC Solid State Technology Association announced the publication of JEP200: Test Methods for Switching Energy Loss Associated with Output Capacitance Hysteresis in Semiconductor Power Devices. Developed jointly by JEDEC’s JC-70.1 Gallium Nitride and JC-70.2 Silicon Carbide Subcommittees, JEP200 is available for free download from the JEDEC website.
Proliferation of soft switching power conversion topologies brought about the need to accurately quantify the energy stored in a power device’s output capacitance because the energy impacts efficiency of power converters. JEP200, developed in collaboration with academia, addresses the critical power supply industry need to properly test and measure the switching energy loss due to the output capacitance hysteresis in semiconductor power devices and details tests circuits, measurement methods, and data extraction algorithms. The document applies not only to wide bandgap power semiconductors such as GaN and SiC, but also silicon power transistors and diodes.
“Professionals in high-frequency power conversion systems have long sought a standardized approach to testing new switching energy losses,” said Dr. Jaume Roig, Member of Technical Staff, onsemi and Vice Chair of the JC-70 Committee. “This document now provides helpful guidance on testing energy losses related to output capacitance hysteresis caused by displacement currents. With this clarity, system optimization can proceed more accurately.”
“JEDEC’s JC-70 committee has the expertise necessary to meet the demands of the entire power semiconductor industry, and the development of JEP200 demonstrates how the JEDEC process enabled the committee to swiftly respond to an industry need,” said John Kelly, JEDEC President. “JEP200 encompasses GaN, SiC, and Si power devices, helping the industry navigate design challenges caused by the growing number of new power conversion topologies.”
Original – JEDEC
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LATEST NEWS / PRODUCT & TECHNOLOGY2 Min Read
Infineon Technologies AG introduced its new StrongIRFET™ 2 power MOSFET 30 V portfolio, expanding the existing StrongIRFET 2 family to address the growing demand for 30 V solutions in the mass market segment. Optimized for high robustness and ease-of-use, the new power MOSFETs were specifically designed to meet the requirements of a wide range of mass market applications, enabling high design flexibility.
Amongst these applications are industrial switched-mode power supplies (SMPS), motor drives, battery-powered applications, battery management systems, and uninterruptible power supplies (UPS).
The StrongIRFET 2 30 V technology offers up to a 40 percent R DS(on) improvement and up to a 60 percent reduction in Q G compared to the previous generation of StrongIRFET devices. This translates into higher power efficiency for improved overall system performance while providing an excellent robustness.
The new power MOSFETs also ensure an easy design-in and provide simplified product services. The product family’s excellent price/performance ratio makes it an ideal choice for designers looking for convenient selection and purchasing.
The StrongIRFET 2 power MOSFETs in 30 V are available now in a TO-220 package. By the end of 2024, the portfolio will be available in a wider range of industry-standard packages and pin-out options, including to DPAK, D²PAK, PQFN and SuperSO8.
Original – Infineon Technologies
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LATEST NEWS / PRODUCT & TECHNOLOGY / Si3 Min Read
Maspower Semiconductor introduced the MSG120T65HQC1, a cutting-edge Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency and high-power applications. With its exceptional performance characteristics and robust design, the MSG120T65HQC1 sets a new benchmark in the power electronics industry.
The MSG120T65HQC1 boasts a low collector-emitter saturation voltage (VCE(sat)) of 1.8V at 120A, ensuring high-speed switching and superior system efficiency. Its tight parameter distribution ensures consistent performance across different operating conditions, making it ideal for demanding applications.
With a continuous collector current rating of 180A at 25°C and 120A at 100°C, the MSG120T65HQC1 is well-suited for high-current applications. Its pulsed collector current capability of up to 360A and diode maximum forward current of 480A further enhance its versatility and reliability.
The device features soft current turn-off waveforms, reducing electromagnetic interference (EMI) and improving overall system performance. This makes it an excellent choice for noise-sensitive applications.
Operating and storage temperatures ranging from -55°C to +175°C ensure reliable performance in extreme environments. The maximum lead temperature for soldering purposes is 300°C, facilitating easy and safe installation.
The MSG120T65HQC1 exhibits low switching losses, with turn-on loss (Eon) of up to 1.2mJ and turn-off loss (Eoff) of up to 2mJ. This translates into improved system efficiency and reduced heat generation.
The MSG120T65HQC1 is available in the TO-247Plus package, which offers excellent thermal performance and mechanical stability. Its low thermal resistance values ensure efficient heat dissipation, maintaining the device’s temperature within safe operating limits.
Applications:
The MSG120T65HQC1 is ideal for a wide range of applications, including but not limited to:
- Traction Inverters for HEV/EVs: Its high-current handling capability and low VCE(sat) make it an excellent choice for electric and hybrid electric vehicle (HEV/EV) traction inverters.
- Auxiliary DC/AC Converters and UPS Systems: The device’s high-efficiency and reliable switching characteristics make it perfect for auxiliary converters and uninterruptible power supplies (UPS).
- Motor Drivers: Its robust design and superior performance parameters make the MSG120T65HQC1 an ideal solution for motor drives, enhancing efficiency and reducing operating costs.
- Other Soft-Switching Applications: The device’s soft-switching capabilities make it suitable for a variety of noise-sensitive and high-performance applications.
With its superior performance, high efficiency, and robust design, the MSG120T65HQC1 from Maspower Semiconductor is a game-changer in the power electronics industry. Ideal for a wide range of high-power and demanding applications, this IGBT solution is poised to revolutionize the way we think about power conversion.
Original – Maspower Semiconductor