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MCC Semi is expanding advanced silicon carbide portfolio with six new 650V SiC MOSFETs. Designed for demanding applications, these components boast high-voltage capability and an on-resistance range of 25 mΩ to 100 mΩ. They’re also equipped with avalanche ruggedness, low switching losses, and enable high-speed switching with a low gate charge.
Their efficiency-boosting design and TO247 package deliver superior thermal performance, while the 3-pin or 4-pin (Kelvin-source pin) options enhance their versatility. These new MOSFETs minimize losses without compromising power handling, making them an intelligent choice for various industrial and telecommunications systems.
Features & Benefits:
- High switching speed with low gate charge
- Low switching losses
- Wide on-resistance selection ranging from 25 mΩ to 100 mΩ
- Avalanche ruggedness for enhanced durability
- TO247 3-pin and 4-pin package options
- Kelvin-source connection for precision (4-pin only)
Original – Micro Commercial Components
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Infineon Technologies AG expands its 7th generation TRENCHSTOP™ IGBT7 product family with the CIPOS™ Maxi Intelligent Power Module (IPM) series for low-power motor drives. The new IM12BxxxC1 series is based on the new TRENCHSTOP IGBT7 1200 V and rapid diode EmCon 7 technology. Thanks to the latest micro-pattern trench design, it offers exceptional control and performance.
This results in significant loss reduction, increased efficiency, and higher power density. The portfolio includes three new products in variants ranging from 10 A to 20 A for power ratings of up to 4.0 kW: IM12B10CC1, IM12B15CC1 and IM12B20EC1.
The IM12BxxxC1 series is packaged in a DIP 36x23D housing. It integrates various power and control components to increase reliability, optimize PCB size and reduce system costs. This makes it the smallest package for 1200 V IPMs with the highest power density and best performance in its class. The IM12BxxxC1 series is particularly suitable for low-power drives in applications such as motors, pumps, fans, heat pumps and outdoor fans for heating, ventilation, and air conditioning.
The new IPM series offers an isolated dual-in-line molded housing for excellent thermal performance and electrical isolation. It also meets the EMI and overload protection requirements of demanding designs. In addition to the protection features, the IPM is equipped with an independent UL-certified temperature thermistor.
The CIPOS™ Maxi integrates a rugged 6-channel SOI gate driver to provide built-in dead time to prevent damage from transients. It features under-voltage lockout at all channels and over-current shutdown. With its multi-function pin, this IPM allows for high design flexibility for various purposes. The low side emitter pins can be accessed for all phase current monitoring making the device easy to control.
Original – Infineon Technologies
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DCDC converters are essential in any electric or hybrid vehicle to connect the high-voltage battery to the low-voltage auxiliary circuits. This includes 12 V power headlights, interior lights, wiper and window motors, fans, and at 48 V, pumps, steering drives, lighting systems, electrical heaters, and air conditioning compressors. In addition, the DCDC converter is important for developing more affordable and energy-efficient vehicles with an increasing number of low voltage functions.
According to TechInsights, the global automotive DC-DC converter market size was valued at USD 4 billion in 2023 and is projected to grow to USD 11 billion by 2030, exhibiting a CAGR of 15 percent during the forecast period. Gallium nitride (GaN) in particular plays a crucial role here, as it can be used to improve the power density in DCDC converters and on-board chargers (OBC).
For this reason, Vitesco Technologies, a leading supplier of modern drive technologies and electrification solutions, has selected GaN to improve the power efficiency of its Gen5+ GaN Air DCDC converter. The CoolGaN™ Transistors 650 V from Infineon Technologies AG significantly improve the overall system performance while minimizing system cost and increasing ease of use. As a result, Vitesco created a new generation of DCDC converters that set new standards in power density (efficiency of over 96%) and sustainability for power grids, power supplies, and OBCs.
The advantages of GaN-based transistors in high-frequency switching applications are considerable, but even more important is the high switching speed, which has been increased from 100 kHz to over 250 kHz. This enables very low switching losses, even in hard-switched half-bridges, with minimized thermal and overall system losses.
In addition, Infineon’s CoolGaN Transistors feature high turn-on and turn-off speeds and are housed in a top-cooled TOLT package. They are air-cooled, eliminating the need for liquid cooling and thereby reducing overall system costs. The 650 V devices also improve power efficiency and density, enabling an output of 800 V. In addition, they feature an ON-resistance (R DS(on)) of 50 mΩ, a transient drain-to-source voltage of 850 V, an I DS,max of 30 A, and an I DSmax,pulse of 60 A.
“We are delighted to see industry leaders like Vitesco Technologies using our GaN devices and innovating with their applications,” said Johannes Schoiswohl, Senior Vice President & General Manager, GaN Systems Business Line Head at Infineon. “The ultimate value of GaN is demonstrated when it changes paradigms, as in this example of moving from a liquid-cooled system to an air-cooled system.”
With GaN Transistors, Vitesco Technologies was able to design its Gen5+ GaN Air DCDC converters with passive cooling, which reduces the system’s overall cost. The GaN devices also allow for simplified converter design and mechanical integration. As a result, the DCDC converters can be flexibly positioned in the vehicle, reducing the workload for manufacturers.
The use of GaN also allows the power of the converters to be scaled up to 3.6 kW and the power density to be increased to over 4.2 kW/l. The Gen5+ GaN Air DCDC converters offer an efficiency of over 96 percent and improved thermal behavior compared to the Gen5 Liquid-Cooled converters. They provide a two-phase output of 248 A at 14.5 V continuous.
The phases can be combined to achieve the maximum output power. Still, it is also possible to switch off one phase under partial load conditions and interleave the switching frequency between the two phases. In addition, by switching the input of two phases in series, the converters based on the CoolGaN power transistors 650 V can be used to implement 800 V architectures without exceeding the maximum blocking voltage of the device. The converters also feature an isolated half-bridge topology consisting of a GaN-based half-bridge, a fully isolated transformer, and an active rectifier unit for each phase.
Original – Infineon Technologies
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MCC Semi introduced two 600V N-channel MOSFETs with superjunction (SJ) technology. Engineered for maximum efficiency, MSJPFR20N60 and MSJPFFR20N60 boast a low on-resistance of 193mΩ, ensuring minimal power losses. Their integrated fast recovery diode ensures rapid recovery times, dramatically optimizing overall switching performance and circuit reliability.
Superjunction MOSFET technology empowers these components to handle high currents while reducing thermal management needs due to minimal heat dissipation, enhancing efficient operation. Available in isolated (TO-220F) and non-isolated (TO-220AB) packages, these MOSFETs are an excellent and seamless upgrade for existing designs, as well as new products.
For meeting the demands of modern electronics design in high-voltage switching applications, including power supplies, AC-DC converters, and motor drives, our new 600V SJ MOSFETs are the obvious solution.
Features & Benefits:
- Advanced superjunction (SJ) MOSFET technology reduces thermal management requirements
- Low on-resistance of 193mΩ enhances efficiency
- Low conduction losses due to minimal heat dissipation
- Low gate charge improves switching speed and efficiency
- Integrated fast recovery diode empowers high-speed switching
- Seamless integration with non-isolated TO-220AB and isolated TO-220F packages
Original – Micro Commercial Components
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As global decarbonization efforts drive demand for power semiconductors, Infineon Technologies AG has officially opened the first phase of a new fab in Malaysia that will become the world’s largest and most competitive 200-millimeter silicon carbide (SiC) power semiconductor fab. Malaysian Prime Minister YAB Dato’ Seri Anwar Ibrahim and Chief Minister of the state of Kedah YAB Dato’ Seri Haji Muhammad Sanusi Haji Mohd Nor joined Infineon CEO Jochen Hanebeck, to symbolically launch production.
The highly efficient 200-millimeter SiC power fab will strengthen Infineon’s role as the global leader in power semiconductors. The first phase of the fab, with an investment volume of two billion euros, will focus on the production of silicon carbide power semiconductors and will include gallium nitride (GaN) epitaxy. SiC semiconductors have revolutionized high-power applications because they switch electricity even more efficiently and enable even smaller designs.
SiC semiconductors increase efficiency in electric vehicles, fast charging stations and trains as well as renewable energy systems and AI data centers. 900 high-value jobs will be created already in the first phase. The second phase, with an investment of up to five billion euros, will create the world’s largest and most efficient 200-millimeter SiC power fab. Overall, up to 4.000 jobs will be created with the project.
“New generations of power semiconductors based on innovative technology such as silicon carbide are an absolute prerequisite to achieving decarbonization and climate protection. Our technology increases the energy efficiency of ubiquitous applications such as electric cars, solar and wind power systems and AI data centers. We are therefore investing in the largest and most efficient high-tech SiC production facility in Malaysia, backed by strong customer commitments,” said Jochen Hanebeck, CEO of Infineon Technologies AG. “Since the demand for semiconductors will constantly rise, the investment in Kulim is highly attractive to our customers, who are backing it with their prepayments. It also increases the resilience of the supply chain for critical components needed for the green transition.”
“Infineon’s remarkable project reinforces Malaysia’s position as a rising major global semiconductor hub” says Malaysian Prime Minister YAB Dato’ Seri Anwar Ibrahim. “This major investment, which will locate the world’s largest and most competitive SiC power fab on our shores, will create jobs and opportunities, as well as attract suppliers, universities and top talent. Moreover, it will support Malaysia’s efforts to protect our climate by boosting electrification and increasing the efficiency of many applications, including electric cars and renewable energy. Thus, technology made in Malaysia will become a central part of global decarbonization efforts in the future.”
“Infineon’s deeply rooted presence in Kulim is a testament to the region’s potential as a hub for high-tech industries,” says Kedah Chief Minister YAB Muhammad Sanusi Md Nor. “This investment will not only create high-value job opportunities for the local community, it will also catalyze economic growth in the region. We are committed to continue providing top business conditions in Kedah and supporting Infineon’s efforts to establish a leading semiconductor facility in Kulim, which will have a positive ripple effect on the entire ecosystem.”
Infineon has secured design wins with a total value of approximately five billion euros and has received approximately one billion euros in prepayments from existing and new customers for the ongoing expansion of the Kulim 3 fab. Notably, these design wins include six OEMs in the automotive sector as well as customers in the renewable energy and industrial segments.
Kulim 3 will be closely connected to the Infineon site in Villach, Austria, Infineon’s global competence center for power semiconductors. Infineon already increased capacity for SiC and GaN power semiconductors in Villach in 2023. As “One Virtual Fab” for wide-bandgap technologies, both manufacturing sites now share technologies and processes which allow for fast ramping and smooth and highly efficient operation. The project also offers a high grade of resilience and flexibility, which will ultimately benefit Infineon’s customers.
The expansion will benefit from the excellent economies of scale already achieved for 200-millimeter manufacturing in Kulim. It will complement Infineon’s leading position in silicon, based on 300-millimeter manufacturing in Villach and Dresden. Thus, Infineon is strengthening its technological leadership across the entire spectrum of power semiconductors, in silicon as well as SiC and GaN.
In addition, the investment in wide-bandgap capacity in Kulim strengthens the local ecosystem and proves that Infineon is a reliable partner within the growing semiconductor hub Malaysia. Infineon’s operations in Malaysia started as early as 1973 in Melaka. In 2006, the company opened Asia’s first frontend fab in Kulim. Currently, Infineon employs more than 16.000 highly skilled people in Malaysia.
The Kulim 3 fab will be powered by 100% green electricity and will employ the latest energy efficiency measures to support Infineon’s goal of carbon neutrality. To avoid emissions, Infineon will use a state-of-the-art abatement system and green refrigerants that combine high efficiency with extremely low global warming potential. Other measures to ensure sustainable operations include state-of-the-art recycling of indirect materials and state-of-the-art water efficiency and recycling processes. Infineon is working towards recognition with the renowned Green Building Index certification.
Original – Infineon Technologies
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Ideal Power Inc. announced an agreement with RYOSHO U.S.A, INC., a subsidiary of RYODEN CORPORATION, for the global distribution of Ideal Power’s products. RYOSHO has already placed orders with Ideal Power from a large global customer interested in the Company’s products for solid-state circuit protection applications.
“This is a significant development in the commercialization of our B-TRAN™ technology as we add a second distributor for our products. RYOSHO has a strong technical sales team with expertise in securing sales for new technologies and global reach, with particular strength in Asia. We look forward to collaborating with RYOSHO to secure additional orders that may potentially lead to design wins and/or custom development agreements,” said Dan Brdar, President and Chief Executive Officer of Ideal Power.
Ideal Power utilizes an asset-light business model leveraging the large investment already made in silicon processing, distribution, demand creation and support infrastructure. This business model allows the Company to continue focusing on disruptive B-TRAN™ technology improvements and commercialization while minimizing capital requirements.
Original – Ideal Power
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Solitron Devices released the SD11740 , 1200V Silicon Carbide (SiC), low RDS(on) MOSFET.
Complimenting a strong offering of high voltage MOSFETs for high reliability/military applications Solitron is expanding its silicon carbide product offering for demanding commercial and industrial applications. Packaged in a SOT-227 the SD11740 offers ultra-low RDS(on) of 8.6mΩ.
The addition of the SOT-227 style package enables higher power applications for Solitron’s SiC based products in EV, power controllers, motor drive, induction heating, solid state circuit breakers and high voltage power supplies. The SD11740 offers 120A of continuous drain current. The SOT-227 features 3kV isolation to a copper heat sink base for outstanding low thermal impedance. The device provides a real Kelvin gate connection for optimal gate control. Either emitter terminal can be used as main or Kelvin emitter.
Designed for use as a power semiconductor switch the SD11740 outperforms silicon based MOSFETs and IGBTs. The standard gate drive characteristics allow for a true drop-in replacement to silicon IGBTS and MOSFETs with far superior performance. Ultra-low gate charge and exceptional reverse recovery characteristics, make them ideal for switching inductive loads and any application requiring standard gate drive.
Original – Solitron Devices
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Dominic Dorfner, Senior Vice President of the Automotive Division in Semikron Danfoss, will take over as President, when Claus A. Petersen retires on August 31, after 40 years in the Danfoss Group – the last 26 years leading Danfoss Silicon Power and Semikron Danfoss.
Dominic Dorfner has been named new President of Semikron Danfoss – a leading global manufacturer of power electronics based in Germany and part of the Danfoss Group. Dominic Dorfner joined Semikron Danfoss in 2021 as Head of the Industry Business in Danfoss Silicon Power. For the past 13 months he has been leading the Automotive Division in Semikron Danfoss.
Chairman of the Semikron Danfoss Board, Danfoss Power Electronics and Drives Segment president Mika Kulju says:
“The Board of Directors for Semikron Danfoss are very pleased that Dominic Dorfner has accepted the role as President. It is an important continuation of the work that has been done in Semikron Danfoss since the company was established two years ago with the merger of Danfoss Silicon Power and SEMIKRON. We are very excited to be working with him to continue the growth and realizing the huge potential for Semikron Danfoss in energy efficiency, in electrification, and in green energy.
Dominic Dorfner is taking over for Claus A. Petersen – a renowned name in the power electronics industry.
Claus A. Petersen has been with Danfoss for more than 40 years. He was named President of Semikron Danfoss when the merger was finalized in 2022. Before the merger he was leading Danfoss Silicon Power, a position he has held since the company was established in Schleswig-Holstein in 1998 with, at that time only around 20 employees. Today, Semikron Danfoss has around 4,000 global employees and annual sales over EUR 1 billion.
Though now retiring as company President, Claus A. Petersen is not completely leaving Semikron Danfoss, as he has joined the Board of Directors.
“We are fully committed to the ambitions and the strategy for Semikron Danfoss that has been developed under Claus’ leadership. I want to extend a big thank you to him, both for what he has accomplished, and for accepting to join the Board. This will ensure a very smooth and proficient transition,” says Mika Kulju, and continues: “Dominic Dorfner has big shoes to fill, but he has all the needed qualities to do so, and strong teams around him.”
Efficient power electronics are vital for decarbonization. Yet another reason why the new President of Semikron Danfoss is really excited about the challenge ahead.
Says Dominic Dorfner:
“Our purpose is to enable a huge transformation towards a CO2 neutral world for us and our kids. To do so, we need extensive electrification, we need green energy, and we need to save energy much more through energy efficiency. All that needs power electronics with the best power modules and systems out there. We can provide that, and I can’t think of a better reason to wake up early and go to work.”
First day in the new role for Dominic Dorfner will be September 1, 2024.
Original – Semikron Danfoss
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The reliability and performance of Electric Vehicle (EV) chargers are critical to drive global market adoption. EV manufacturers are focused on delivering the most robust, weather-resistant and user-friendly EV chargers. To accelerate the time to market of an EV charger, Microchip Technology announced three flexible and scalable EV Charger Reference Designs including a Single-Phase AC Residential, a Three-Phase AC Commercial with Open Charge Point Protocol (OCPP) and System-on-Chip (SoC) and a Three-Phase AC Commercial with OCPP and Display.
Most of the active components for the EV charger reference designs are available from Microchip, including the microcontroller (MCU), analog front-end, memory, connectivity and power conversion. This significantly streamlines the integration process, enabling manufacturers to speed time to market for new charging solutions.
“Microchip’s E-Mobility team is focused on developing reference designs that our customers can directly use and benefit from,” said Joe Thomsen, corporate vice president of Microchip’s digital signal controller business unit. “We want to help our customers shorten design cycles by offering complete solutions such as these new EV charger references designs, while also supplying the hardware, software and technical support.”
Microchip’s EV charger reference designs enable manufacturers to scale depending on the target market with a range of solutions to meet the needs of residential and commercial charging applications. These reference designs offer complete hardware design files and source code with software stacks that are tested and compliant to communication protocols, including OCPP. OCPP offers manufacturers a standard protocol to communicate between the charge point or charging station and a central system. This protocol is designed to enable interoperability of the charging applications regardless of the network or vendor.
The Single-Phase AC Residential EV Charger Reference Design offers a cost-effective and convenient solution for home charging, where a single-phase supply is used. The on-board high-performance energy metering device with automatic calibration simplifies the production process. The design has integrated safety protection features including Protective Earth Neutral (PEN) fault detection and Residual Current Device (RCD) detection.
The Three-Phase AC Commercial with OCPP and Wi-Fi® SoC EV Charger Reference Design is intended for high-end residential and commercial charging stations. It features OCPP 1.6 stack integration for communication with charging networks and Wi-Fi SoC for remote management.
The Three-Phase AC Commercial with OCPP and Display EV Charger Reference Design caters to commercial and public charging stations with a focus on robust operation including a completed architecture review according to UL 2231. It is designed to support up to 22 kW with bidirectional charging capabilities and a modular architecture. The design also features a robust Graphical User Interface (GUI) with a Thin-Film Transistor (TFT) screen and touch input designed to withstand harsh environments.
Navigating the global EV charging landscape is complex and fragmented, but Microchip offers the key technologies and solutions to significantly simplify the design process through implementation. Beyond the reference designs, Microchip supplies the hardware, software and global technical support. To learn more about Microchip’s EV, HEV and PHEV solutions, visit the website.
The EV Reference Designs are supported by MPLAB® X Integrated Development Environment (IDE) to help designers minimize development time, as well as MPLAB Harmony v3 and MPLAB Code Configurator.
Original – Microchip Technology
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Vishay Intertechnology, Inc. announced results for the fiscal second quarter ended June 29, 2024.
Highlights
- 2Q 2024 revenues of $741.2 million
- Gross margin was 22.0% and included the negative impact of approximately 170 basis points related to the addition of Newport
- EPS of $0.17
- 2Q 2024 book-to-bill of 0.86 with book-to-bill of 0.82 for semiconductors and 0.90 for passive components
- Backlog at quarter end was 4.6 months
“During the second quarter, we executed well on our Vishay 3.0 strategic plan, deepening our customer engagements supported by capacity that has landed and that we will continue to expand, and advancing our silicon carbide strategy as we prepare for the megatrends in sustainability and e-mobility,” said Joel Smejkal, President and CEO.
“Revenue, including a full quarter of Newport, was flat quarter over quarter, primarily reflecting schedule agreement adjustments by automotive Tier 1 customers. At mid-year 2024, it is apparent that the industry recovery is taking longer than we had expected at the beginning of the year. As a result, we are adjusting the timetable of the Itzehoe, Germany expansion project beyond 2024 while holding to our planned capital investment of $2.6 billion between 2023 and 2028. For 2024, we now plan to invest between $360 million to $390 million in capex.”
3Q 2024 Outlook
For the third quarter of 2024, management expects revenues in the range of $745 million +/- $20 million, with gross profit margin in the range of 21.0% +/- 50 basis points, including the negative impact of approximately 175 to 200 basis points from the addition of Newport.Original – Vishay Intertechnology
