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VisIC Technologies announced a new partnership aimed at advancing high-efficiency GaN inverter technology for the EV market. This collaboration will provide automotive OEMs with power semiconductors that exceed silicon carbide (SiC) performance, while offering lower costs at device and system level.
In a recent test conducted at AVL’s state-of-the-art facilities in Germany, an inverter based on VisIC’s GaN-on-Silicon D³GaN components proved an outstanding performance. Mounted on AVL’s e-motor test bench and controlled by AVLs SOP eDrive controls algorithm, the system achieved a benchmark efficiency level of 99.67% at 10kHz, stunningly climbing to over 99.8% efficiency at 5kHz — which outperforms comparable SiC inverters by up to 0.5% and is cutting energy losses by more than 60%.
This breakthrough positions the AVL and VisIC partnership as a compelling option for automakers striving to balance high efficiency with affordability in EV design. It is worth noting that VisIC’s GaN-on-Silicon power devices require significantly less energy and therefore CO2 during the chip production process compared to SiC. They can be produced in widespread 200mm and 300mm silicon foundries, which makes scaling production a straightforward process.
“With AVL, we’re making cutting-edge GaN inverter technology accessible for even more electric vehicles, establishing a new benchmark for efficiency and cost-effectiveness in the industry,” said Gregory Bunin, CTO of VisIC Technologies. “Our partnership reflects a shared commitment to driving EV innovation that’s both impactful and accessible, bringing GaN’s unparalleled performance to a broader market.”
“Working with VisICs new GaN power module for high-power systems enables us to offer our customers cutting-edge solutions that are optimally aligned with the requirements of next-generation drive systems. These include, among other things, high power density combined with reduced overall system costs,” added Dr. Thomas Frey, Head of Segment E-Mobility & E-Drive System at AVL Software and Functions GmbH. “Together, we can significantly advance e-mobility and help reduce the carbon footprint.”
Looking ahead, AVL and VisIC plan to expand their GaN-on-Si platform to include 800V GaN power modules, ensuring that their technology remains scalable and adaptable to the needs of the growing BEV market. This collaboration places AVL and VisIC Technologies at the forefront of GaN inverter technology, establishing new standards for energy efficiency and performance across the EV industry.
Original – VisIC Technologies
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DISCO Corporation has announced a comprehensive series of initiatives aimed at advancing both its environmental goals and technological innovations. As a leader in precision cutting and grinding technologies, the company continues to shape the future of semiconductor manufacturing with a dual focus on sustainability and cutting-edge product development.
The company has intensified its focus on environmental, social, and governance (ESG) strategies, introducing initiatives designed to enhance operational sustainability. By optimizing energy usage and reducing emissions, DISCO aims to minimize its environmental footprint while supporting global efforts toward decarbonization. These measures also include resource-efficient manufacturing processes that align with DISCO’s long-term vision for sustainable growth.
As part of its product lineup expansion, DISCO introduced the ZHSC25 and Z25 dicing blades. Specifically engineered for advanced applications, these tools represent significant advancements in semiconductor processing. The ZHSC25 blade is tailored for high-performance dicing of SiC wafers, a critical material in power electronics due to its superior heat resistance and efficiency. Meanwhile, the Z25 blade is optimized for a broad range of electronic components, offering manufacturers unprecedented processing speed and accuracy. These innovations demonstrate DISCO’s dedication to addressing evolving industry demands.
DISCO’s recent initiatives reflect a holistic approach to industry leadership, combining a commitment to ESG principles with groundbreaking innovation. By aligning technological advancements with sustainability objectives, the company aims to contribute to both the semiconductor industry’s growth and global sustainability efforts.
With these strategic updates, DISCO Corporation continues to exemplify its vision of harmonizing technology and sustainability to address the challenges and opportunities of a rapidly evolving global market.
The company plans to present its new offerings at SEMICON Japan 2024, one of the largest events in the semiconductor industry. This platform will enable DISCO to highlight the impact of its latest technologies and sustainability measures, reinforcing its role as an industry pioneer. Visitors to the exhibit will gain insights into how these developments are poised to enhance efficiency and quality in semiconductor manufacturing.
Original – DISCO
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Navitas Semiconductor will showcase several breakthroughs for AI data centers, EVs, and mobile technology at CES 2025 (Tech West, Venetian suite 29-335, January 7th – 10th).
The “Planet Navitas” suite will showcase the company’s mission to ‘Electrify our World™’ by advancing the transition from legacy silicon to next-generation, clean energy, GaN and SiC power semiconductors. These technologies are designed for high growth markets that demand the highest efficiency and power density, such as AI data centers, electric vehicles (EVs), and mobile. Additionally, Navitas will demonstrate how GaN and SiC technologies contribute to reducing carbon-footprint, with the potential to save over 6,000 megatons of CO2 per year by 2050.
Major technology and system breakthroughs include:
- World’s only 650V bi-directional GaNFast™ power ICs: Game-changing, disruptive GaN technology for next-generation solutions that require the highest efficiency and power density, with the lowest complexity, and significant component reduction.
- World’s First 8.5 kW AI Data Center Power Supply: See the world’s first 8.5 kW OCP power solution achieving 98% efficiency for AI and hyperscale data centers. Featuring high-power GaNSafe™ power ICs and Gen-3 Fast SiC MOSFETs in 3-Phase Interleaved CCM Totem-Pole PFC and 3-Phase LLC topologies to provide the highest efficiency, performance, and lowest component count.
- World’s Highest Power Density AI Power Supply: Navitas delivers efficient 4.5 kW power in the smallest power-supply form-factor for the latest AI GPUs that demand 3x more power per rack. The optimized design uses high-power GaNSafe ICs and Gen-3 Fast SiC MOSFETs enabling the world’s highest power density with 137 W/in3 and over 97% efficiency.
- ‘IntelliWeave’ Patented Digital Control Optimized for AI Data Center Power Supplies: Combined with high-power GaNSafe™ and Gen-3 ‘Fast’ SiC MOSFETs to enable PFC peak efficiencies of 99.3% and reduce power losses by 30% compared to existing solutions.
- Automotive Qualified (AEC-Q101) Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology: Enabled by over 20 years of SiC innovation leadership, GeneSiC™ technology leads on performance with the Gen-3 ‘Fast’ SiC MOSFETs with ‘trench-assisted planar’ technology. This proprietary technology provides world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster charging EVs and up to 3x more powerful AI data centers.
- GaNSlim™: Simple. Fast. Integrated: A new generation of highly-integrated GaN power ICs that will further simplify and speed the development of small form factor, high-power-density applications by offering the highest level of integration and thermal performance. Target applications include chargers for mobile devices and laptops, TV power supplies, and lighting systems of up to 500W.
- SiCPAK™ High-Power Modules – Built for Endurance and Performance: Utilizing industry-leading ‘trench-assisted planar’-gate technology and epoxy-resin potting for increased power cycling and long-lasting reliability, SiCPAK modules offer compact form factors and provide cost-effective, power-dense solutions for applications including EV charging, drives, solar, and energy storage systems (ESS).
- New Advancements in our Leading GaNFast & GeneSiC technology:
- GaNSense™ motor drive ICs with bi-directional loss-less current sensing, voltage sensing, and temperature protection, further enhancing performance and robustness beyond what is achievable by any discrete GaN or discrete silicon device.
- GeneSiC MOSFET die specifically optimized for EV traction modules with additional screening and gold metallization for sintering.
- Sustainable Solutions: Discover Navitas’ vision to reduce up to 6 Gtons/year of CO₂ by 2050 with technologies that offer higher efficiency, density, and grid independence.
CES 2025 takes place in Las Vegas, NV from January 7th – 10th. The “Planet Navitas” suite is located in Tech West at the Venetian, suite 29-335.
Original – Navitas Semiconductor
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ROHM has announced the adoption of its EcoSiC™ products, including SiC MOSFETs and SiC Schottky barrier diodes (SBDs) in the HFA/HCA series of 3.5kW output AC-DC power supply units for 3-phase applications from COSEL, a leading power supply manufacturer in Japan. Incorporating ROHM SiC MOSFETs and SiC SBDs into the forced air-cooled HFA series and conduction-cooled HCA series achieves up to 94% efficiency. The HCA series has been mass produced since 2023, while the HFA series began mass production in 2024.
Many industrial applications that handle high power in the industrial sector, including MRI machines and CO2 lasers, require 3-phase power supplies that differ from the single-phase power supplies used in households. COSEL’s AC-DC power supply units – equipped with ROHM’s EcoSiC™ technology that excels in high-temperature, high-frequency, high-voltage environments – are compatible with 3-phase power supplies from 200VAC to 480VAC, contributing to improved power supply efficiency across a wide range of industrial equipment worldwide.
Jun Uchida, General Manager, New Product Development Dept. 2, COSEL Co., Ltd.
“The HFA/HCA series achieve high efficiency despite delivering a high-power output of 3.5kW by incorporating ROHM’s low-loss SiC power devices. Operating at high input voltages typically poses a challenge in reducing losses in high-voltage power devices, but using SiC power devices translates to significantly lower losses compared to conventional solutions, resulting in power supplies that maintains high efficiency and power density even under demanding high-power conditions.”
Akihiro Hikasa, Group General Manager, Power Devices Business Unit, SiC Business Section, ROHM Co., Ltd.
“We are delighted to support COSEL, an industry leader in power supply systems, by providing SiC power devices. A leading company in SiC power devices, ROHM also provides comprehensive power solutions that combine peripheral components. In addition, by addressing customer issues, we also improve device performance by incorporating the insights gained into our products. Going forward, we will continue to collaborate with COSEL to contribute to a sustainable society by enhancing the efficiency of industrial equipment that handle large amounts of power.”
The HFA/HCA series are 3.5kW power supplies featuring a wide input range (200VAC to 480VAC) that meets global power supply requirements. This allows them to be used anywhere in the world without the need to modify the power supply for each region, contributing to the standardization of application designs. Both forced air-cooled (HFA series) and conduction-cooled (HCA series) models – selectable based on operating environment – are available in 48V and 65V output voltage variants that can be used as power sources for a variety of high-power applications such as laser generation and MRI.
Original – ROHM
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GlobalFoundries has received an additional $9.5 million in federal funding from the U.S. government to advance the manufacturing of GF’s essential gallium nitride (GaN) on silicon semiconductors at its facility in Essex Junction, Vermont.
The funding moves GF closer to large-scale production of GaN chips. With the ability to handle high voltages and temperatures, GaN chip technology is essential for enabling higher performance and greater energy efficiency across a range of RF and high-power control applications including automobiles, datacenter, IoT, aerospace and defense.
With the award, GF will continue to add new tools, equipment and prototyping capabilities to its market-leading GaN IP portfolio and reliability testing as the company moves closer to full-scale manufacturing of its 200mm GaN chips in Vermont. GF is committed to creating a fast and efficient path for customers to realize new innovative designs and products that leverage the unique efficiency and power management benefits of GaN chip technology.
“GF is proud of its leadership in GaN chip technology, which is positioned to make game-changing advances across multiple end-markets and enable new generations of devices with more energy-efficient RF performance and faster-charging, longer-lasting batteries,” said Nicholas Sergeant, vice president of IoT and aerospace and defense at GF. “We appreciate the U.S. government’s partnership and ongoing support of our GaN program. Realizing full-scale GaN chip manufacturing will be a catalyst for innovation, for both our commercial and government partners, and will add resilience and strengthen the semiconductor supply chain.”
The new funding, awarded by the U.S. Department of Defense’s Trusted Access Program Office (TAPO), represents the latest federal investment to support GF’s GaN program in Vermont.
“This strategic investment in critical technologies strengthens our domestic ecosystem and national security, and ensures these assets are readily available and secure for DoD utilization. In concert with key partners, this approach fortifies defense systems, empowering resilience and responsiveness,” said Dr. Nicholas Martin, Director at Defense Microelectronics Activity.
In total, including the new award, GF has received more than $80 million since 2020 from the U.S. government to support research, development and advancements to pave the way to full-scale GaN chip manufacturing.
Vermont is a U.S.-accredited Trusted Foundry and the global hub of GF’s GaN program, with longstanding leadership in 200mm semiconductor manufacturing. In July 2024, GF acquired Tagore Technology’s Gallium Nitride Power portfolio and created the GF Kolkata Power Center in Kolkata, India. The center is closely aligned with and supports GF’s facility in Vermont, and is helping advance GF’s research, development and leadership in GaN chip manufacturing.
Original – GlobalFoundries
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Ideal Power Inc. announced that the Company secured a multi-unit order for its SymCool® IQ intelligent power module from a customer that specializes in the development and manufacture of circuit protection and power conversion solutions.
The customer previously ordered multiple SymCool® power modules and drivers. They are interested in SymCool® and SymCool® IQ modules for solid-state circuit protection and power conversion solutions across their product lines focused on several end markets including electric vehicles, electric vehicle charging, renewable energy, and data centers.
“This multi-unit order for our SymCool® IQ is a significant milestone in the commercialization of our B-TRAN® technology. SymCool® IQ opens up additional markets for us including renewable energy, energy storage and electric vehicle charging. This customer is evaluating SymCool® IQ for use in pairing renewable energy with energy storage to take advantage of both the improved efficiency and bidirectionality of our technology,” stated Dan Brdar, President and Chief Executive Officer of Ideal Power.
SymCool® IQ builds on the bidirectional BTRAN® multi-die packaging design of the Company’s SymCool® power module and adds an integrated intelligent driver optimized for bidirectional operation. The SymCool® IQ, rated at 1200V and 200A, has significant advantages compared to IGBT modules, including lower losses and inherent bidirectionality.
For OEM customers incorporating SymCool® IQ into their products, these advantages translate to increased energy savings, lower product operating costs, and significantly lower thermal management requirements resulting in more compact and lower cost solutions. The addition of an integrated intelligent driver in the SymCool® IQ provides protection features such as overcurrent protection, undervoltage protection and temperature sensing. OEM customers will also recognize its popular 62-millimeter package as it is a standard for industrial power semiconductor packaging.
Original – Ideal Power
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VisionPower Semiconductor Manufacturing Company Pte Ltd (VSMC), the joint venture formed in September, 2024 by Vanguard International Semiconductor Corporation and NXP Semiconductors N.V. celebrated breaking ground at the site of the joint venture’s new 300mm wafer manufacturing facility in Tampines, Singapore.
The groundbreaking ceremony was attended by customers, suppliers, partners, association representatives, residents, and government officials. Executives from VSMC, VIS and NXP were also present to commemorate the start of construction on the new facility, which is anticipated to begin initial production in 2027. VSMC was also honored to have Dr. Tan See Leng, Minister for Manpower and Second Minister for Trade and Industry, participate in the ceremony.
“Singapore is renowned not only as Asia’s economic hub but also as a beacon of technological innovation. We are proud to announce the groundbreaking of our first 12-inch fab in Singapore, which will uphold the company’s core business philosophy, provide specialty IC foundry services, and lay the foundation for our future development. This fab will advance the semiconductor industry and bolster the local high-tech sector. Designed with modern technology and guided by green manufacturing principles, the fab reflects our firm commitment to the future. VSMC is dedicated to being a responsible corporate citizen, supporting economic growth while ensuring environmental sustainability.”VSMC and VIS Chairman Leuh Fang
“I’m humbled and excited to see construction of VSMC’s 300mm fab moving forward very swiftly. NXP has enjoyed decades of successful semiconductor manufacturing operations in Singapore, and the new VSMC fab is entirely aligned with our differentiated hybrid manufacturing strategy. This new fab will support NXP’s growth plans with supply control and geographic resilience at competitive cost.”NXP President and CEO Kurt Sievers
“We welcome the decision by VIS and NXP to jointly establish VSMC and its greenfield 12-inch wafer fab in Singapore. This is testament to Singapore’s attractiveness to global companies to site advanced manufacturing activities, and reinforces Singapore’s position as a critical global node in the semiconductor supply chain. The new fab will not only create about 1,500 good jobs, it will also facilitate business and partnership opportunities for local enterprises. Singapore will continue to invest in talent development, R&D, and decarbonization solutions to enhance our competitiveness and strengthen Singapore’s semiconductor ecosystem.”Ms Cindy Koh, Executive Vice President, Singapore Economic Development Board
Construction of the VSMC fab is on-track, with initial production slated to begin in 2027. Upon the successful ramp of the initial phase, a second phase will be considered and developed pending future business development by VIS and NXP. With an expected output of 55,000 300mm wafers per month in 2029, the joint venture will create approximately 1,500 jobs while contributing to the development of the upstream and downstream supply chains, contributing to Singapore and the global semiconductor ecosystem.
The fab will adopt a fully automated production model, integrating an Automated Material Handling System (AMHS) and comprehensive quality management through Artificial Intelligence applications. This will achieve fast, precise, high-yield, and high-quality manufacturing excellence, providing customers with competitive services and creating a smart fab in Singapore.
Addressing the company’s commitment to sustainability stewardship, the fab will be constructed in accordance with Singapore Green Mark standards and will incorporate rigorous green manufacturing measures. To help minimize environmental impact, the site will feature energy-efficient cooling and lighting systems, high degree of process water recycling, and the use of eco-friendly materials. In addition, several green office design principles will be integrated, such as ample natural light, abundant communal spaces, and lush greenery to foster and contribute to a culture of wellness.
On June 5, VIS and NXP announced plans to establish the VSMC joint venture in Singapore to build a 300mm wafer fab with a total investment of approximately $7.8 billion. On September 4, VIS and NXP announced the establishment of the VSMC joint venture, having obtained all necessary regulatory approvals from relevant authorities and injected capital to officially establish the VSMC joint venture. The joint venture marks a significant step to establishing geographic resilience and accelerating Singapore’s semiconductor ecosystem.
Original – NXP Semiconductors
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Ampere, the intelligent electric vehicle pure player born from Renault Group and STMicroelectronics announced the next step in their strategic co-operation, starting in 2026, with a multi-year agreement between STMicroelectronics and Renault Group on the supply of Silicon Carbide (SiC) power modules, as part of their collaboration on a powerbox for the inverter for Ampere’s ultra-efficient electric powertrain.
Ampere and STMicroelectronics worked together on the optimization of the power module, the key element in the powerbox, to get the highest performance and best competitiveness in the e-powertrain, leveraging Ampere’s expertise in EV technology and STMicroelectronics’ expertise in advanced power electronics.
“This agreement is the result of the intensive work carried out with STMicroelectronics. By working upstream together, we were able to optimize and secure the supply of key components for our electric powertrains, to offer high performance EVs with increased range and optimized charging time. It perfectly aligns with Ampere’s strategy to master the entire value chain of power electronics for its e-powertrain, leveraging STMicroelectronics’ expertise in power modules,” said Philippe Brunet, SVP Powertrain & EV engineering, Ampere.
“ST is at the cutting edge of the development of advanced power electronics enabling the mobility industry to improve the performance of electrified platforms. With the optimization of these higher-efficient products and solutions to meet Ampere’s performance requirements, and our vertically integrated silicon carbide supply chain, we are supporting Ampere’s strategy for its next generation of electric powertrain,” said Michael Anfang, Executive Vice President Sales & Marketing, Europe, Middle East and Africa Region, STMicroelectronics. “ST and Ampere share a common vision for more sustainable mobility and this agreement marks another step forward in improved power performance to further contribute to concrete improvements to carbon emissions reduction by the mobility industry and its supply chain.”
Power modules, composed of numerous silicon carbide chips, manage and convert electrical power from the battery to drive the electric motor. They play a crucial role in the efficiency of the electric powertrain and battery range, as well as energy regeneration features, making them a key element of the efficiency of an electric car. They also contribute to the smoothness and responsiveness of driving.
STMicroelectronics and Ampere have collaborated on a powerbox for the supply of energy to Ampere’s new generation of electric motors. The powerbox is designed for optimum performance-size ratio across Ampere’s line-up, on 400 Volt battery EV vehicles and for Segment C-EVs with 800 Volt batteries, enabling greater autonomy and faster charging. 800 Volts is one of the key levers to achieve the 10%-80% quick charge in 15 minutes or less. This agreement is fully aligned with Ampere’s strategy to master the entire value chain of the electric vehicle, particularly by working further upstream with its partners and ensuring the best efficiency at each step.
As an integrated device manufacturer (IDM), STMicroelectronics ensures quality and security of supply to serve carmakers’ strategies for electrification. The collaboration with Ampere on the silicon carbide power modules and powerbox demonstrates STMicroelectronics’ leadership and system level experience of advanced power electronics, including its packaging expertise.
Original – Ampere
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Navitas Semiconductor announced that Dr. Ranbir Singh, formerly Executive Vice President at Navitas and the founder and CEO of GeneSiC Semiconductor, has been appointed to Navitas’ board of directors.
“We are pleased to welcome Ranbir to the board of directors,” said Gene Sheridan, Chairman, President and CEO. “Ranbir has led the industry with over 30 years of SiC innovation as the founder and CEO of GeneSiC; and 8 years prior to that at Wolfspeed (formerly Cree, Inc.) and brings deep industry knowledge to the board. We look forward to his contributions as we grow our business with next-generation, clean-energy power for an efficient and sustainable future.”
Dr. Singh joined Navitas with the acquisition of GeneSiC Semiconductor, which he founded in 2004. Dr. Singh has dedicated his life to the mission of high-performance, high-reliability silicon carbide technology, and is highly respected in the power electronics community, with several awards, over 200 journal and conference papers, a book and over 40 US patents.
“I am excited to be joining the Navitas board at this pivotal moment as the company leads technical innovation with disruptive, wide band-gap technology, into fast-growing AI, EV and Mobile markets,” said Dr. Singh. “Navitas is executing a significant transformation in the semiconductor industry, and it is an honor to have the opportunity to continue to contribute to the company’s growth and innovation.”
Dr. Singh holds a Bachelor of Technology, Electrical Engineering from the Indian Institute of Technology, Delhi, and both Master’s and PhD in Electrical Engineering – Power Semiconductors, from North Carolina State University (NCSU), Raleigh. He was inducted into NCSU’s Department of Electrical and Computer Engineering (ECE) Alumni Hall of Fame in 2022.
Original – Navitas Semiconductor
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The U.S. Department of Commerce’s Bureau of Industry and Security (BIS) announced a package of rules designed to further impair the People’s Republic of China’s (PRC) capability to produce advanced-node semiconductors that can be used in the next generation of advanced weapon systems and in artificial intelligence (AI) and advanced computing, which have significant military applications. This action is a proactive measure enhancing the Department of Commerce’s work to impede the PRC’s ability to procure and produce the technologies necessary for its military modernization.
The rules include new controls on 24 types of semiconductor manufacturing equipment and 3 types of software tools for developing or producing semiconductors; new controls on high-bandwidth memory (HBM); new red flag guidance to address compliance and diversion concerns; 140 Entity List additions and 14 modifications spanning PRC tool manufacturers, semiconductor fabs, and investment companies involved in advancing the PRC government’s military modernization; and several critical regulatory changes to enhance the effectiveness of our previous controls.
“This action is the culmination of the Biden-Harris Administration’s targeted approach, in concert with our allies and partners, to impair the PRC’s ability to indigenize the production of advanced technologies that pose a risk to our national security,” said U.S. Secretary of Commerce Gina Raimondo. “Further strengthening our export controls underscores the central role of the Department of Commerce in executing the United States’ broader national security strategy. No Administration has been tougher in strategically addressing China’s military modernization through export controls than the Biden-Harris Administration.”
“The United States has taken significant steps to protect our technology from being used by our adversaries in ways that threaten our national security. As technology evolves, and our adversaries seek new ways to evade restrictions, we will continue to work with our allies and partners to proactively and aggressively safeguard our world-leading technologies and know-how so they aren’t used to undermine our national security,” said National Security Advisor Jake Sullivan.
“This action builds on BIS’s laser-focused work, undertaken over the past few years, to impose strategic controls that have hindered the PRC’s ability to produce advanced semiconductors and AI capabilities directly impacting U.S. national security. We are constantly talking to our allies and partners as well as reassessing and updating our controls. Today’s announcement represents the next step in that ongoing work,” said Under Secretary of Commerce for Industry and Security Alan Estevez. “This package is proactive and innovative in how we are responding to increasingly sophisticated actors and complex supply chains. We must ensure that we stay ahead of the PRC by protecting our advanced technology.”
“The PRC’s Military-Civil Fusion strategy presents a significant risk that advanced node semiconductors will be used in military applications that threaten the security of the United States, as well as the security of our allies and partners,” said Assistant Secretary of Commerce for Export Administration Thea D. Rozman Kendler. “These rules build on previous actions taken in service of our longstanding goal: protecting our collective security by constraining the PRC’s ability to indigenize the most advanced technologies, without unduly interfering with the continuing trade of technology.”
“The purpose of these Entity List actions is to stop PRC companies from leveraging U.S. technology to indigenously produce advanced semiconductors,” said Matthew S. Axelrod, Assistant Secretary for Export Enforcement. “By adding key semiconductor fabrication facilities, equipment manufacturers, and investment companies to the Entity List, we are directly impeding the PRC’s military modernization, WMD programs, and ability to repress human rights.”
Taking Novel Approaches to Impair and Impede the PRC’s Military Modernization
Throughout the Biden-Harris Administration, in coordination with U.S. allies and partners, BIS has taken novel approaches to address an ever-changing geopolitical and technological landscape and respond to increasingly sophisticated threat actors.
All of the policy changes announced today are designed to limit the PRC’s ability to indigenize the production of advanced technologies – such as advanced-node integrated circuits and the equipment used to produce them – that pose a substantial risk to U.S. national security. The semiconductor manufacturing equipment controlled by today’s rules is needed to produce advanced-node integrated circuits, which are necessary for advanced weapon systems and advanced AI used in military applications.
Advancements in large-scale AI models have shown striking performance improvements across many human abilities and may be used in advanced military and intelligence applications. These models have the ability to rapidly review and synthesize large amounts of information into actionable points. Advanced AI models could be used for rapid response scenarios on the battlefield; lowering the barrier to develop cyberweapons or chemical, biological, radiological, or nuclear weapons; and utilizing facial and voice recognition to repress and surveil minorities and political dissidents.
This announcement underscores the United States’ “small yard, high fence” strategy and will restrict the PRC’s ability to produce technologies key to its military modernization or repression of human rights.
These actions serve two primary objectives:
- Slowing the PRC’s development of advanced AI that has the potential to change the future of warfare; and
- Impairing the PRC’s development of an indigenous semiconductor ecosystem – an ecosystem built at the expense of U.S. and allied national security.
In line with these objectives, BIS is implementing several regulatory measures, including but not limited to:
- New controls on semiconductor manufacturing equipment needed to produce advanced-node integrated circuits, including certain etch, deposition, lithography, ion implantation, annealing, metrology and inspection, and cleaning tools.
- New controls on software tools for developing or producing advanced-node integrated circuits, including certain software that increases the productivity of advanced machines or allows less-advanced machines to produce advanced chips.
- New controls on high-bandwidth memory (HBM). HBM is critical to both AI training and inference at scale and is a key component of advanced computing integrated circuits (ICs). The new controls apply to U.S.-origin HBM as well as foreign-produced HBM subject to the EAR under the advanced computing Foreign Direct Product (FDP) rule. Certain HBM will be eligible for authorization under new License Exception HBM.
- Addition of 140 entities to the Entity List, in addition to 14 modifications, including semiconductor fabs, tool companies, and investment companies that are acting at the behest of Beijing to further the PRC’s advanced chip goals which pose a risk to U.S. and allied national security.
- Establishment of two new Foreign Direct Product (FDP) rules and corresponding de minimis provisions:
- Semiconductor Manufacturing Equipment (SME) FDP: Extends jurisdiction over specified foreign-produced SME and related items if there is “knowledge” that the foreign-produced commodity is destined to Macau or a destination in Country Group D:5, including the PRC
- Footnote 5 (FN5) FDP: Extends jurisdiction over specified foreign-produced SME and related items if there is “knowledge” of certain involvement by an entity on or added to the Entity List with a FN5 designation. Such entities are being designated on the Entity List for specific national security or foreign policy concerns described in the Entity List companion rule, such as these entities’ involvement in supporting the PRC’s military modernization through the PRC’s attempts to produce advanced-node semiconductors, including for military end-uses.
- De minimis: Extends jurisdiction over specified foreign-produced SME and related items described in the above FDP rules that contain any amount of U.S.-origin integrated circuits.
- New software and technology controls, including restrictions on Electronic Computer Aided Design (ECAD) and Technology Computer Aided Design (TCAD) software and technology when there is “knowledge” that such items will be used for the design of advanced-node integrated circuits to be produced in Macau or a destination in Country Group D:5.
- Clarification to the EAR regarding existing controls on software keys. Export controls now apply to the export, reexport, or transfer (in-country) of software keys that allow access to the use of specific hardware or software or renewal of existing software and hardware use licenses.
In October 2022, BIS published an interim final rule (IFR) to restrict the PRC’s ability to both purchase and manufacture certain high-end semiconductors critical for military applications. As part of BIS’s commitment to continually evaluating the effectiveness of export controls, it released updated rules in October 2023 and April 2024. Today’s rules build on those efforts.
Original – Bureau of Industry and Security
