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Navitas Semiconductor announced their new portfolio of Gen-3 ‘Fast’ (G3F) 650 V and 1,200 V SiC MOSFETs optimized for fastest switching speed, highest efficiency, and increased power density for applications such as AI data center power supplies, on-board chargers (OBCs), fast EV roadside super-chargers, and solar / energy-storage systems (ESS). The broad portfolio range covers industry-standard packages from D2PAK-7 to TO-247-4, designed for demanding, high-power, high-reliability applications.
The G3F family is optimized for high-speed switching performance, resulting in 40% improvement to hard-switching figures-of-merits (FOMs) compared to competition in CCM TPPFC systems. This will enable increasing the wattage of next-generation AI power supply units (PSUs) up to 10 kW, and power per rack increase from 30 kW to 100-120 kW.
The G3F GeneSiC MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology. and offer better-than-trench MOSFET performance, while also providing superior robustness, manufacturability and cost than competition. G3F MOSFETs deliver high-efficiency with high-speed performance, enabling up to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors.
The ‘trench-assisted planar’ technology enables an extremely low RDS(ON) increase versus temperature, which results in the lowest power losses across the complete operating range and offers up to 20% lower RDS(ON) under real-life operation at high temperatures compared to competition.
Additionally, all GeneSiC MOSFETs have the highest-published 100%-tested avalanche capability, 30% longer short-circuit withstand time, and tight threshold voltage distributions for easy paralleling, GeneSiC MOSFETs are ideal for high-power, fast-time-to-market applications.
Navitas’ latest 4.5 kW high-power density AI Server PSU reference design in CRPS185 form-factor, showcases the 650 V-rated, 40mOhms G3F FETs for an Interleaved CCM TP PFC topology. Alongside the GaNSafe™ Power ICs in the LLC stage, a power density of 138 W/inch3 and peak efficiency above 97% is realized, which comfortably achieves ‘Titanium Plus’ efficiency standards, now mandatory in Europe.
For the EV market, 1,200 V/34 mOhm (G3F34MT12K) G3F FETs enable Navitas’ new 22 kW, 800V Bi-Directional OBC and 3KW DC-DC converter to achieve a superior power density of 3,5 kW/L and a peak efficiency of 95.5%.
“G3F sets a new standard for efficient, cool-running SiC performance, coupled with high reliability and robustness for high-power, high-stress systems,” noted Dr. Sid Sundaresan, Senior Vice President of SiC Technology and Operations. “We’re pushing the boundaries of SiC, with up to 600 kHz switching speeds, and hard-switching figures-of-merit up to 40% better than competition.”
Original – Navitas Semiconductor
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Cambridge GaN Devices is partnering with Qorvo® to develop a reference design and evaluation kit (EVK) that showcases GaN for motor control applications. CGD aims to speed the use of GaN power ICs in BLDC and PMSM applications, resulting in higher power, highly efficient, compact and reliable systems. Qorvo is building an EVK for its PAC5556A motor/control IC that is powered by CGD’s ICeGaN™ (IC-enhanced GaN) technology.
GIORGIA LONGOBARDI | CEO, CGD
“Because ICeGaN – unlike other GaN implementations from other companies – integrates the interface circuitry but not the controller together with the GaN HEMT, it is simple to combine with highly integrated motor controller and drive ICs such as Qorvo’s PAC5556A 600 V High Performance BLDC / PMSM Motor Controller and Driver. We are delighted to partner with Qorvo to enable motor controller and driver applications to enjoy the benefits of GaN power.”JEFF STRANG | GENERAL MANAGER, POWER MANAGEMENT BUSINESS UNIT, QORVO
“Wide bandgap semiconductors such as GaN and SiC are being actively considered in various motor control applications for the power density and efficiency benefits they bring. CGD’s ICeGaN technology offers ease of use and reliability, two crucial factors for motor control and drive designers. We are excited to see the reaction of design engineers when they experience the power of GaN combined with our highly integrated PAC5556A 600V BLDC motor control solution.”GaN brings a variety of benefits, primarily lower losses, which results in higher efficiency, leading to increased power availability and less heat. This reduces the need for complex, bulky, and costly thermal management solutions, resulting in smaller, more powerful systems that have a longer life. GaN also delivers higher torque at low speeds and, therefore, more accurate control. Also, GaN allows high-speed switching, which can reduce audible noise, which is especially valued for domestic items such as ceiling fans, heat pumps, and refrigerators.
In addition to being easy to use, ICeGaN offers several other significant benefits over other GaN devices. The gate drive voltage of ICeGaN is compatible with IGBTs. Because ICeGaN integrates the Miller clamp within the GaN IC, a negative Turn-Off voltage is not required, and low-cost current drivers can be used. Finally, ICeGaN includes a useful current sense function, simplifying circuit design and reducing BOM.
The reference design is available today, and EVK RD5556GaN will be available for purchase in Q324. It will also be shown on CGD’s booth Hall 7 643 at the PCIM exhibition in Nuremberg, Germany, 11-13 June. Qorvo will also exhibit at PCIM, on booth Hall 7 406.
Original – Cambridge GaN Devices
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Alpha and Omega Semiconductor Limited announced the expansion of their package portfolio options available for their second generation 650V to 1200V αSiC MOSFETs. Applicable to many critical applications such as xEV charging, solar inverters, and industrial power supplies, the new package selections give designers the added flexibility of multiple system optimization options to further maximize system efficiency while streamlining their manufacturing process.
AOS will showcase its expanded surface mount and module package options at PCIM Europe 2024 in Nuremberg, Germany, June 11-13.
The first new surface mount package is available for the AOBB040V120X2Q, AOS’ new 1200V/40mOhm αSiC MOSFET in a standard D2PAK-7L surface mount package. This AEC-Q101 qualified product is designed to replace traditional through-hole packages. It is ideal for applications such as on-board chargers (OBCs) where efficient cooling can be provided by vias and backside PCB heatsinks, simplifying the assembly flow and maximizing the power density. In addition, the low inductance package combined with the fast driver sourcesense connection positions these AOS αSiC MOSFETs as one of the most efficient power-switching solutions in the market.
For additional design flexibility, AOS is releasing its GTPAK™ surface mount package with topside cooling features. In designs where a topside-mounted heatsink is viable, the direct heat path from the GTPAK minimizes the thermal resistance. It enables higher power dissipation for more effective PCB routing. The first AOS product in GTPAK is the AOGT020V120X2. This 1200V/20mOhm αSiC MOSFET is an ideal solution to meet the requirements of high-efficiency solar inverter and industrial power supply applications.
Finally, AOS announced the AOH010V120AM2 as the first product in its new AlphaModule™ high power baseplate-less module family. This 1200V/10mOhm half-bridge αSiC module features press-fit pins and an integrated thermistor. It is in a standard footprint module that enables the replacement of multiple discrete devices into a single compact form factor while simplifying both the mechanical and electrical design by providing a clear separation of electrical and cooling paths. Single modules are suitable for residential solar inverters, or several modules in parallel will allow scaling to power levels necessary to drive the needs of fast DC charging stations.
“With the continued growth in EVs, energy infrastructure, and renewable energy, we continue to see increased interest in our αSiC MOSFETs. The expansion of our product portfolio to include these new advanced package options gives our customers the design flexibility they need to take advantage of our superior αSiC performance and continue the trend of pushing power systems to higher density and efficiency,” said David Sheridan, Vice President of SiC products at AOS.
Original – Alpha and Omega Semiconductor
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Vincotech introduced a GaN-based power module which provides an effective solution for highly efficient power conversion in isolated DC/DC converters or DC/AC inverter stages. It offers a 2-in-1 solution, and can be utilized either as a 10mOhm H-Bridge or 5mOhm half-bridge.
The module features E-mode GaN HEMTs chip technology, promoting high efficiency and power density, and is available in an industry-standard package with low stray loop inductance. It is compatible with external gate drives, offering engineers high design flexibility.
Main benefits
- Highest design flexibility with external gate driver, enabling slew rate control for low EMC
- Low voltage overshoots due to integrated snubber capacitors
- High power density and small footprint for soft switching above 500kHz
- Kelvin source pin and low inductive gate loop for clean switching behavior
Applications
- DC fast charger
- Solar inverter
- UPS
Original – Vincotech
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Mitsubishi Electric Corporation announced that it will launch a web-based service on June 28 to provide data on the design and validation of a proprietary prototype inverter equipped with a module containing three LV100 insulated gate bipolar transistors (IGBTs), aiming to help customers accelerate their development of high-power inverters for applications such as photovoltaic power-generation systems.
Customers involved in developing prototype inverter systems with LV100 packages are expected to use reference information provided by the service to reduce their design, manufacture and validation workloads. The service will be exhibited at major trade shows, including Power Conversion Intelligent Motion (PCIM) Europe 2024 in Nuremberg, Germany from June 11 to 13.
The prototype inverter includes a package of three parallel LV100 industrial IGBTs in a module measuring 100mm x 140mm module, typical of those used in high-power inverter systems. The reference data will include design data, such as geometry, component layout and electrical circuitry, as well as evaluation data such as temperatures, short-circuit protection, current balance and computer-aided engineering (CAE) validation results.Original – Mitsubishi Electric
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Semikron Danfoss and Vincotech announced the renewal of their cooperation agreement for power semiconductor module packaging. The two enterprise’s alliance, dating back to 2003, has been extended to further strengthen MiniSKiiP packaging technology.
This move underscores Semikron Danfoss and Vincotech’s commitment to advancing MiniSKiiP and delivering cutting-edge solutions that meet the needs of the power electronics industry.
“The partnership with Vincotech is key to ensuring the safe supply of our number one motor drive module MiniSKiiP to our customers,” said Peter Sontheimer, Senior Vice President Industry Division at Semikron Danfoss. “We strongly believe that this type of arrangement is beneficial to the long-term health of the power electronics supply chain.”
Multiple source options for the package to further mitigate the supply chain risk, as well as standards-compliant design, are just a few of the benefits of this renewed cooperation agreement. Engineered for easy assembly and featuring service-friendly spring contacts, MiniSKiiP’s unique hardware has earned an excellent reputation for efficiency and performance in general purpose and servo motor drives.
“We are delighted to be renewing our partnership with Semikron Danfoss for the MiniSKiiP package technology,” said Edoardo Guiotto, VP Sales & Marketing at Vincotech. “This agreement reaffirms our dedication to deliver premium products to our customers and drive innovation and advances in power electronics.”
Semikron Danfoss and Vincotech are now set to take MiniSKiiP’s reliability and standardization to the next level. Customers can look forward this technology bringing even greater robustness, versatility, and compatibility to their products.
Original – Semikron Danfoss
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As data centers become increasingly power-hungry to support the tremendous processing requirements of AI workloads, the need for boosting energy efficiency is paramount. The powerful combination of onsemi’s latest generation T10 PowerTrench® family and EliteSiC 650V MOSFETs create a solution that offers unparalleled efficiency and high thermal performance in a smaller footprint for data center applications.
Compared to a typical search engine request, an AI-supported engine request requires more than 10x the power, leading to data center power needs expected to reach an estimated 1,000 TWh globally in less than two years. To process one AI-supported request, energy is converted four times from the grid to the processor, which can result in an energy loss of approximately 12%.
Using the T10 PowerTrench family and EliteSiC 650V solution, data centers are able to reduce power losses that occur by an estimated 1%. If implemented in data centers globally, the solution could reduce energy consumption by 10 TWh annually or the equivalent of the energy required to fully power nearly one million homes per year.
The EliteSiC 650V MOSFET offers superior switching performance and lower device capacitances to achieve higher efficiency in data centers and energy storage systems. Compared to the previous generation, these new generation silicon carbide (SiC) MOSFETs have halved the gate charge and reduced both the energy stored in output capacitance (Eoss) and the output charge (Qoss) by 44%.
With no tail current during turn-off and superior performance at high temperatures, they can also significantly reduce switching losses compared to super junction (SJ) MOSFETs. This allows customers to downsize system components while increasing the operating frequency, resulting in an overall reduction in system costs.
Separately, the T10 PowerTrench Family is engineered to handle high currents, crucial for DC-DC power conversion stages, and offers increased power density and superior thermal performance in a compact footprint. This is achieved through a shield gate trench design, which boasts an ultra-low gate charge and an RDS (on) of less than 1 milliohm. Additionally, the soft recovery body diode and lower Qrr effectively minimizes ringing, overshoots, and electrical noise to ensure optimal performance, reliability, and robustness under stress. The T10 PowerTrench Family also meets the stringent standards required for automotive applications.
The combined solution also meets the stringent Open Rack V3 (ORV3) base specification required by hyperscale operators to support the next generation of high-power processors.
“AI and electrification are reshaping our world and skyrocketing power demands. Accelerating innovation in power semiconductors to improve energy efficiency is key to enabling these technological megatrends. This is how we power the future responsibly,” said Simon Keeton, group president, Power Solutions Group, onsemi. “Our latest solution can significantly reduce power losses that occur during the energy conversion process and have a meaningful impact on the demands for the next generation of data centers.”
Original – onsemi
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Vanguard International Semiconductor Corporation and NXP Semiconductors N.V. announced the plan to create a manufacturing joint-venture VisionPower Semiconductor Manufacturing Company Pte Ltd (“VSMC”) which will build a new 300mm semiconductor wafer manufacturing facility in Singapore.
The joint-venture fab will support 130nm to 40nm mixed-signal, power management and analog products, targeting the automotive, industrial, consumer and mobile end markets. The underlying process technologies are planned to be licensed and transferred to the joint venture from TSMC.
The joint venture will begin construction of the initial phase of the wafer fab in the second half of 2024, pending receipt of all required regulatory approvals, with initial production available to customers during 2027. The joint venture will operate as an independent, commercial foundry supplier, providing assured proportional capacity to both equity partners, with an expected output of 55,000 300mm wafers per month in 2029. The joint venture will create approximately 1,500 jobs in Singapore. Upon the successful ramp of the initial phase, a second phase will be considered and developed pending commitments by both equity partners.
The total cost of the initial build out is anticipated to be $7.8 billion. VIS will inject $2.4 billion representing a 60 percent equity position in the joint venture and NXP will inject $1.6 billion for the remaining 40 percent equity position. VIS and NXP have agreed to contribute an additional $1.9 billion which will be utilized to support the long-term capacity infrastructure. The remaining funding including loans will be provided by third parties to the joint venture. The fab will be operated by VIS.
“VIS is pleased to work with leading global semiconductor company NXP to build our first 300mm fab. This project aligns with our long-term development strategies, demonstrating VIS’ commitment to meeting customer demands, and diversifying our manufacturing capabilities,” said VIS Chairman Leuh Fang. “Adhering to the vision of business sustainability, this fab will be built adopting the Singapore Green Mark standards and implementing rigorous green manufacturing measures. We will continue to create great value for our stakeholders and look forward to working with customers, suppliers, local talents, and government to continuously contribute to Singapore and the global semiconductor ecosystem.”
“NXP continues to take proactive actions to ensure it has a manufacturing base which provides competitive cost, supply control, and geographic resilience to support our long-term growth objectives,” said Kurt Sievers, NXP President and CEO. “We believe VIS is well suited and fully understands the complexities involved in building and operating together with NXP a 300mm analog mixed signal fab. The joint venture partnership we intend to create with VIS perfectly aligns within NXP’s hybrid manufacturing strategy.”
Original – NXP Semiconductors
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Toshiba Electronic Devices & Storage Corporation has started mass production of a 3rd generation silicon carbide (SiC) 1200 V and drain current (DC) rating 400 A of SiC MOSFET module “MG400Q2YMS3” for industrial equipment and has expanded its lineup.
The new product MG400Q2YMS3 offers low conduction loss with low drain-source on-voltage (sense) of 0.9 V (typ.). It also offers low switching loss with both turn-on switching loss and turn-off switching loss of 13 mJ (typ.). These help to reduce power loss of equipment and the size of cooling device.
MG400Q2YMS3 has a low stray inductance of 12 nH (typ.) and is capable of high-speed switching. In addition, it suppresses surge voltage in switching operation. Thus, it is available for high frequency isolated DC-DC converter.
Toshiba’s SiC MOSFET module of 2-153A1A package has a lineup of five existing products, MG250YD2YMS3 (2200 V / 250 A), MG400V2YMS3 (1700 V / 400 A), MG250V2YMS3 (1700 V / 250 A), and MG600Q2YMS3 (1200 V / 600 A), including new products. This provides a wider range of product selection.
Toshiba will continue to meet the needs for high efficiency and the downsizing of industrial equipment.
Applications
Industrial equipment
- Auxiliary power supply for railway vehicles
- Renewable energy power generation systems
- Motor control equipment for industrial equipment
- High frequency DC-DC converters, etc.
Features
- Low drain-source on-voltage (sense):
VDS(on)sense=0.9 V (typ.) (ID=400 A, VGS=+20 V, Tch=25 °C) - Low turn-on switching loss:
Eon=13 mJ (typ.) (VDD=600 V, ID=400 A, Tch=150 °C) - Low turn-off switching loss:
Eoff=13 mJ (typ.) (VDD=600 V, ID=400 A, Tch=150 °C) - Low stray inductance:
LsPN=12 nH (typ.)
Original – Toshiba
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Cambridge GaN Devices (CGD) will take the opportunity afforded by PCIM, Europe’s leading power electronics exhibition and conference (Nuremberg Messe, 11-13th June) to demonstrate how the company’s product portfolio is developing to address higher power applications such as motor drives, inverters and data centres, as well as lower power, ultra-compact smart portable device adapters and chargers.
As well as introducing a new product family, and showing a selection of informative demos on its booth (Hall 7 stand 643), CGD will have a very visible presence around the show with various presentations.
- 15.00, Tuesday 11th June, Hall 9-642: Dr Giorgia Longobardi, CGD’s CEO, will formally launch the company’s latest ICeGaN™ 650V family of GaN ICs, targeting applications in the 1kW to 5kW range.
- 13.30, Tuesday 11th June, Technology Stage (Hall 7 Stand 743): CGD’s CTO, Professor Florin Udrea will take part in a panel discussion hosted by Markt & Technik editor, Engelbert Hopf.
- 14:20, Wednesday 12th June, Technology Stage (Hall 7 booth 743): Professor Udrea will be part of a panel discussion hosted by Bodo’s Power Systems, entitled ‘GaN Wide Bandgap Design, the Future of Power.’
- 14.10, Thursday 13th June, Technology Stage (Hall 7 booth 743): Di Chen, Director of Business Development & Technical Marketing, CGD, and José Quiñones Staff Applications Engineer at Qorvo will share the stage with a joint presentation ‘GaN Power ICs and Power Application Controller Optimize Performance in BLDC and PMSM Motor Drives.’
ANDREA BRICCONI | CHIEF COMMERCIAL OFFICER, CGD
“With its inherent ruggedness and reliability, our ICeGaN™ GaN ICs are perfectly suited to meet the needs of higher power applications such as data centres and inverters. Our presentations and demos and the new devices which we are launching at the show will illustrate our capabilities for these markets.CGD’s Booth (Hall 7 643) will feature reference designs, evaluation boards and demos that support the company’s existing business in chargers and adapters as well as the new higher power applications. New exhibits include:
- Very high power density (30W/in3) 140W reference design produced with the Taiwanese Industrial Technology Research Institute (ITRI) board
- Single leg of a 3-phase automotive inverter demo board, developed in partnership with French public R&I institute, IFP Energies nouvelles
- Two half-bridge evaluation boards with new thermally-enhanced DFN package designs
- A 2.7kW totem-pole power factor correction demo board
- Qorvo motor drive evaluation kit using ICeGaN
- Demo comparing a half-bridge circuit realized using ICeGaN vs discrete e-Mode GaN
ANDREA BRICCONI | CHIEF COMMERCIAL OFFICER, CGD
“The power electronics world has swung irrevocably in favour of GaN. Visit CGD during PCIM to experience the world’s easiest-to-use GaN, so your application can benefit from GaN’s greater efficiency and higher power density now, without any design delays.”Original – Cambridge GaN Devices
