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Power Master Semiconductor has announced the expansion of its e SiC MOSFET family with introduction of new AEC-Q101 qualified, high-performance top-side cooling packages. These include the TSPAK DBC version and LF version, specially designed for automotive and industrial applications.
The TSPAK offers superior thermal performance, high efficiency, power density and reliability, making it ideal for a variety of automotive applications such as on-board chargers (OBCs), DC-DC converters, and e-compressors. This innovative packaging leverages Power Master Semiconductor’s latest generation of 1200V eSiC MOSFET (Gen2), employing cutting-edge technology to decouple a trade-off between specific on-resistance (Rsp) and short-circuit withstand time (SCWT). Compared to the previous generation, the new 1200V eSiC MOSFETs deliver 20% reduction in RDS(ON) and a 15% improvement in SCWT, as well as a 45% reduction in switching losses.
Key Features and Benefits of TSPAK
TSPAK LF version
- Top-side cooling package with an exposed drain at the surface, allowing direct heat dissipation to the heatsink.
- Offers superior thermal performance and supports high current capabilities.
- High temperature capability : Tj (max)= 175°C
TSPAK DBC version
- Integrates an isolated DBC ceramic pad on the surface, providing premium thermal performance and enhanced design flexibility.
- Features 3.6kV isolation voltage, extended creepage distance (5.23mm), and flexible mounting by directly connected to an external heatsink with thermal grease.
- High temperature capability : Tj (max)= 175°C
With an industry-standard footprint of 14mm x 18.58mm, the TSPAK packages provide superior thermal performance and Kelvin source configuration to minimizes gate noise and reduces turn-on losses by 60%, enabling higher-frequency operation and improved power density.
The PCR120N40M2A (LF version) and PCRZ120N40M2A (DBC version) are automotive-grade 1200V/40mΩ eSiC MOSFETs in TSPAK packages, leveraging Power Master Semiconductor’s 2nd-generation eSiC MOSFET technology to deliver optimized performance for the automotive systems.
- E-compressors, vital for efficient thermal management, extended battery life, enhanced charging efficiency, and improved driving range.
- Totem-Pole PFC and CLLC/DAB (Dual Active Bridge) topologies, essential for bidirectional power conversion in 800V battery systems used in electric vehicles.
“Cooling is one of the greatest challenges in high power design and successfully addressing it is the key enabler to reducing size and weight, which is critical in modern automotive design” said Namjin Kim, Senior Director of Sales & Marketing. “Our new top-side cooling package offer better system efficiency and minimize heat thermal path on the PCB, the system design will be simplified and compacted. We are confident that this innovative solution will be the optimal choice for high-performance automotive applications.”
“Efficient cooling is a critical challenge for reducing size and weight of high-power automotive systems,” said Namjin Kim, Senior Director of Sales & Marketing. “Our new top-side cooling package enhances system efficiency and minimizes the thermal path on the PCB, enabling simpler, more compact system designs. We believe this innovative solution will drive the high performance automotive applications.”
Original – Power Master Semiconductor
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DENSO Corporation and Fuji Electric Co., Ltd. announced that a semiconductor supply plan submitted jointly by the companies has been approved by the Ministry of Economy, Trade and Industry. Under this plan, the companies will take part in joint investment and production of silicon carbide (SiC) power semiconductors to develop and strengthen frameworks for the supply of said semiconductors.
Power semiconductors are vital to the efficient supply of electric power. Demand for power semiconductors has been rising rapidly given that they are used in electrified vehicles, which are being adopted at an accelerated pace amid the push for the decarbonization of society. In comparison to prior silicon semiconductors, SiC power semiconductors are able to deliver superior performance under high temperature, high-frequency, and high-voltage conditions.
These devices are therefore anticipated to make large contributions to reductions in power loses as well as to more compact and lighter-weight designs for battery electric vehicle systems and other power electronics. Accordingly, growth in demand is projected for SiC power semiconductors.
In response to electrification trends, DENSO has advanced SiC technology development projects targeting increased quality and efficiency in relation to everything from wafers and element devices to modules and inverters. Meanwhile, Fuji Electric has constructed extensive frameworks encompassing all tasks spanning from the development of SiC power semiconductor elements that enable increased efficiency and more compact designs for power electronics equipment to mass production of the related modules.
Based on the approved plan, these companies will combine their respective automotive product development and production technology capabilities in a joint effort to expand their capacity for the efficient and stable supply of SiC power semiconductors throughout Japan.
Through this partnership, the companies will contribute to the development of semiconductor supply frameworks within Japan and to the improvement of the international competitiveness of Japan’s domestic semiconductor and automotive industries. In addition, this partnership is anticipated to help advance the decarbonization of society.
Original – Fuji Electric
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Infineon Technologies AG has won the German Sustainability Award in the “Electrical Engineering and Electronics” category. “The jury is of the opinion that Infineon has assumed a leading role in the field of sustainability and serves the sector as a ‘beacon’ for successful transformation,” the judges said in their statement. The German Sustainability Award recognizes companies which make effective and exemplary contributions to transformation and which function as role models within their industry.
“We are particularly honored and delighted to win the German Sustainability Award,” said Elke Reichart, Member of the Management Board and Chief Digital and Sustainability Officer at Infineon, who accepted the award in Duesseldorf. “We at Infineon work hard to drive decarbonization and digitalization and to create a more sustainable future. This award is recognition, as well as an incentive to be a role model in sustainability and to continue rigorously implementing our ambitious sustainability strategy – together with our employees, customers and partners.”
Infineon is pursuing a comprehensive and ambitious decarbonization strategy. The company is making good progress towards the goal it defined in 2020: achieving climate neutrality by 2030. Since then, emissions have been reduced by more than two thirds while revenue has almost doubled. Moreover, Infineon is intensifying its collaboration along the entire supply chain. As a pioneer in its industry, Infineon this year began reporting emissions at the individual product level, referred to as the Product Carbon Footprint. The data is already available for half of all Infineon products today.
Infineon’s semiconductors are decisive in making the generation, transmission, storage and use of energy more efficient. A recent example of sustainable product innovation by Infineon is a new type of energy-saving silicon carbide (SiC) module, whose developers were nominated for the 2024 Deutscher Zukunftspreis. The solution increases the energy efficiency of existing high-performance electrical applications such as solar and wind power plants and train drives. Among other things, the module also facilitates the efficient electrification of large drives such as those found in agricultural and construction machinery, ships and aircraft. In concrete terms, a single electric locomotive equipped with the new drive system saves around 300 megawatt hours per year, which corresponds to the annual energy requirements of 100 single-family homes.
The German Sustainability Award is Europe’s largest award for ecological and social commitment. The jury of the German Sustainability Award (DNP) selected winners in 100 different sectors from among around 2000 competing companies. The German Sustainability Award works together with the German Chamber of Industry and Commerce (DIHK), WWF Germany, PwC Germany, Leuphana University Lüneburg (CSM Lüneburg) and numerous other industry associations to design and implement the competition.
Current reports on sustainability at Infineon can be found here.
Original – Infineon Technologies
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Analog Devices, Inc. announced financial results for its fiscal fourth quarter and fiscal year 2024, which ended November 2, 2024.
“ADI’s revenue, profitability, and earnings per share all finished above our guided midpoint, underscoring continued business momentum and solid execution,” said Vincent Roche, CEO and Chair. “While unprecedented customer inventory headwinds drove a historic revenue decline during fiscal 2024, we maintained operating margins north of 40%, which is a testament to our business model’s resilience. We also continued to make strategic, long-term investments across engineering, manufacturing, and the end-to-end customer experience. As such, we enter 2025 as an even stronger enterprise, giving me the utmost confidence in our ability to drive increased value for customers and shareholders over the long term.”
“After a brief decline in overall bookings during our third quarter, orders picked up steadily throughout the fourth quarter, particularly in the Automotive end market. While macro uncertainty continues to limit the pace of our recovery, we remain cautiously optimistic for a strong growth year in fiscal 2025,” said Richard Puccio, CFO.
Performance for the Fourth Quarter and Fiscal Year 2024 (PDF)
Outlook for the First Quarter of Fiscal Year 2025
For the first quarter of fiscal 2025, we are forecasting revenue of $2.35 billion, +/- $100 million. At the midpoint of this revenue outlook, we expect reported operating margin of approximately 22.0%, +/- 130 bps, and adjusted operating margin of approximately 40.0%, +/- 100 bps. We are planning for reported EPS to be $0.80, +/- $0.10, and adjusted EPS to be $1.53, +/- $0.10.
Our first quarter fiscal 2025 outlook is based on current expectations and actual results may differ materially as a result of, among other things, the important factors discussed at the end of this release. These statements supersede all prior statements regarding our business outlook set forth in prior ADI news releases, and ADI disclaims any obligation to update these forward-looking statements.
The adjusted results and adjusted anticipated results above are financial measures presented on a non-GAAP basis. Reconciliations of these non-GAAP financial measures to their most directly comparable GAAP financial measures are provided in the financial tables included in this release. See also the “Non-GAAP Financial Information” section for additional information.
Original – Analog Devices
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Valeo, a leading automotive technology company, and ROHM Semiconductor collaborate to propose and optimize the next generation of power modules for electric motor inverters using their combined expertise in power electronics management. As a first step, ROHM will provide its 2-in-1 Silicon Carbide (SiC) molded module TRCDRIVE pack™ to Valeo for future powertrain solutions.
Valeo is broadening access to efficient, electrified mobility across various vehicle types and markets from the smallest one (ebikes), through the mainstream (passenger cars) to the biggest one (eTrucks). By combining Valeo’s expertise in mechatronics, thermal management and software development with ROHM’s power modules, Valeo drives the power electronics solution forward, contributing to the performance, efficiency, and decarbonization of automotive systems worldwide.
Valeo and ROHM have been collaborating since 2022, initially focusing on technical exchanges aimed at improving the performance and efficiency of the motor inverter – a key component in the propulsion systems of electric vehicles (EVs) and plug-in hybrids (PHEVs). By refining power electronics, both companies aim to offer optimized cost/performance by delivering higher energy efficiency, reducing heat generation thanks to an optimized cooling and mechatronic integration, and increasing overall reliability with a SiC packaging.
“This partnership marks, for Valeo Power Division, a significant step forward in delivering advanced and high-efficient power electronics,” says Xavier DUPONT, Valeo Power Division CEO. “Together, we aim to set new industry standards for high voltage inverters and accelerate the transition towards more efficient and affordable electric mobility.”
“We are pleased to support Valeo, a renowned automotive supplier, with our power semiconductors. ROHM’s TRCDRIVE pack™ provides high power density, leading to an improved power efficiency. Together, we contribute to the development of highly efficient powertrains by fostering the collaboration with Valeo,” says Wolfram HARNACK, President ROHM Semiconductor GmbH.
These evolutions are all essential to supporting the growing demand for longer range, faster charging capabilities, and, overall a high-performance and an affordable inverter for BEVs and PHEVs.
Valeo will start supplying a first series project in early 2026. Valeo and ROHM will contribute to the improvement of efficiency and downsizing of Valeo’s next generation of xEV inverters.
Original – ROHM
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Wolfspeed announced that Melissa Garrett has been appointed Senior Vice President and General Counsel, effective December 9, 2024. Garrett succeeds Brad Kohn, who has resigned from the company for another professional opportunity.
Garrett brings extensive legal expertise and has served as a senior member of Wolfspeed’s legal team leading global employment and non-patent litigation matters since 2015. She brings a comprehensive legal background in contracts and negotiations, litigation management, corporate governance, employment law, policy and mergers and acquisitions.
“Melissa’s contributions to Wolfspeed over the last nine years have been highly valuable, and we are pleased to welcome her to the role of General Counsel,” said Tom Werner, Executive Chairman. “With her proven track record in legal, risk and compliance, coupled with her deep institutional knowledge of Wolfspeed, she is uniquely qualified to step into this role. We deeply appreciate Brad’s tireless advocacy for Wolfspeed over the years and thank him for his dedication and many contributions to the company. He and Melissa have been working closely on all key projects, so we expect a smooth transition and we wish him all the best in his future endeavors.”
Prior to joining Wolfspeed, Garrett served as Deputy General Counsel and Assistant Corporate Secretary at Kangaroo Express. She previously served as an attorney at Jackson Lewis and Paul, Hastings, Janofsky & Walker LLP, and began her career as an attorney at Fisher & Philips. She holds a Juris Doctor from Indiana University and a Bachelor of Arts from University of Wisconsin-Madison.
Original – Wolfspeed
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Navitas Semiconductor announced that the company’s revenue growth has been acknowledged for the third consecutive year, by Deloitte’s Technology Fast 500™. Navitas growth was driven by strong demand for its advanced, high-efficiency, wide-bandgap gallium nitride (GaN) and silicon carbide (SiC) power components, across a growing number of global markets and customers.
Now in its 30th year, the Deloitte Technology Fast 500 provides a ranking of the fastest-growing technology, media, telecommunications, life sciences, fintech, and energy tech companies — both public and private — in North America. Based on percentage fiscal year revenue growth from 2020 to 2023, Navitas achieved 571% growth as GaN and SiC technology enabled efficient, sustainable applications and displaced legacy silicon chips.
“As a ‘pure-play’, next-gen, semiconductor company, Navitas continues to outperform the overall power semiconductor market, with record sales into mobile fast chargers, now ramping AI data center revenues and a strong customer pipeline for EV opportunities,” said Gene Sheridan, CEO and co-founder. “Recent introductions like GaNSafe™, Gen-3 ‘Fast’ SiC, and a newly-announced, 48V-focused range in partnership with Infineon, have built a strong foundation for further revenue growth in applications from 20W to 20MW, and with a market opportunity of over $22B per year.”
Original – Navitas Semiconductor
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Infineon Technologies AG introduced the EiceDRIVER™ Power 2EP1xxR family of full-bridge transformer drivers for IGBT, SiC and GaN gate driver power supplies. With the 2EP1xxR family, Infineon extends its portfolio of power devices to provide designers with a solution for isolated gate driver supply.
By using the devices, asymmetrical output voltages can be implemented to supply isolated gate drivers in a cost-effective and space-saving manner. This makes the 2EP1xxR particularly suitable for industrial or consumer applications requiring isolated gate drivers, including solar applications, electric vehicle charging, energy storage systems, welding, uninterruptible power supplies and drive applications.
The 2EP1xxR family comes in a compact TSSOP8 pin package with power integration and optimizations to generate an asymmetric output voltage. The family is optimized for asymmetric gate driver supply through its unique duty-cycle adjustment capability. The devices support a wide input voltage range up to 20 V. They also offer integrated temperature, short-circuit and undervoltage lockout (UVLO) protection to prevent unwanted system faults.
The 2EP1xxR family is available in the following four product variants: 2EP100R and 2EP101R are optimized for low component count designs for IGBT and SiC MOSFET gate driver power supplies. 2EP110R allows fine adjustment of the duty-cycle to match the output voltage ratio to the application requirements of SiC and GaN power switches. 2EP130R is optimized for highly flexible designs to meet different application requirements.
The device offers 5-stage overcurrent protection, 41 selectable switching frequencies or synchronization with external PWM for transformer matching, and 41 selectable duty-cycle options to adjust the output voltage.
Original – Infineon Technologies
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To provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay Intertechnology, Inc. introduced a new 150 V TrenchFET® Gen V n-channel power MOSFET in the PowerPAK® SO-8S (QFN 6×5) package.
Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance by 68.3% and on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power conversion applications — by 15.4% while providing 62.5% lower RthJC and 179 % higher continuous drain current.
With the industry’s lowest on-resistance of 5.6 mΩ at 10 V and on-resistance times gate charge FOM of 336 mΩ*nC, the device released today minimizes power losses from conduction. This allows designers to boost efficiency to meet next-generation power supply requirements, such as 6 kW AI server power systems. In addition, the extremely low 0.45 °C/W RthJC of the PowerPAK SO-8S package enables continuous drain current up to 144 A to increase power density while providing robust SOA capability.
The SiRS5700DP is ideal for synchronous rectification, DC/DC converters, hot swap switching, and OR-ing functionality. Typical applications will include servers, edge computing, super computers, and data storage; telecom power supplies; solar inverters; motor drives and power tools; and battery management systems. RoHS-compliant and halogen-free, the MOSFET is 100 % Rg and UIS tested and complies with IPC-9701 criteria for more reliable temperature cycling. The device’s standard 6 mm by 5 mm footprint is fully compatible with the PowerPAK SO-8 package.
Original – Vishay Intertechnology
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STMicroelectronics hosted its Capital Markets Day in Paris, France. Within the framework of an unchanged strategy, ST is reiterating its $20 billion plus revenue ambition and associated financial model, that it now expects to be reached by 2030. ST is also setting an intermediate financial model with revenues expected around $18 billion with an operating margin within a 22% to 24% range in 2027-2028.
With the execution of its manufacturing reshaping program and cost base resizing initiative, ST expects to exit 2027 with high triple-digit million-dollar savings compared to the current cost base. This will enable the company to reach an operating margin between 22 and 24% in 2027-2028.
ST’s value proposition remains focused on sustainable and profitable growth, providing differentiating enablers to customers with a strong commitment to sustainability. With its customers and partners, ST will continue to be a key actor of the transformation of all industries towards a smarter, safer and more sustainable future.
Original – STMicroelectronics
