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Aehr Test Systems announced financial results for its second quarter of fiscal 2025 ended November 29, 2024.
Fiscal Second Quarter Financial Results:
- Net revenue was $13.5 million, compared to $21.4 million in the second quarter of fiscal 2024.
- GAAP net loss was $(1.0) million, or $(0.03) per diluted share, compared to GAAP net income of $6.1 million, or $0.20 per diluted share, in the second quarter of fiscal 2024.
- Non-GAAP net income, which excludes the impact of stock-based compensation, amortization of intangible assets, the acquisition-related fair value adjustment to inventory, and acquisition-related costs, was $0.7 million, or $0.02 per diluted share, compared to non-GAAP net income of $6.7 million, or $0.23 per diluted share, in the second quarter of fiscal 2024.
- Bookings were $9.2 million for the quarter.
- Backlog as of November 29, 2024 was $12.4 million. Effective backlog, including bookings since November 29, 2024, is $26.6 million.
- Total cash, cash equivalents and restricted cash as of November 29, 2024 was $35.2 million, compared to $40.8 million as of August 30, 2024.
Fiscal First Six Months Financial Results:
- Net revenue was $26.6 million, compared to $42.1 million in the first six months of fiscal 2024.
- GAAP net loss was $(0.4) million, or $(0.01) per diluted share, compared to GAAP net income of $10.8 million, or $0.36 per diluted share, in the first six months of fiscal 2024.
- Non-GAAP net income was $2.8 million, or $0.10 per diluted share, which excludes the impact of stock-based compensation, amortization of intangible assets, the acquisition-related fair value adjustment to inventory, and acquisition-related costs, compared to non-GAAP net income of $11.9 million, or $0.40 per diluted share, in the first six months of fiscal 2024.
- Cash used in operating activities was $3.5 million for the first six months of fiscal 2025.
Recent Business Achievements:
- Secured the first artificial intelligence (AI) processor customer for wafer level burn-in, utilizing the new high-power FOX-XPTM solution for wafer level production test and burn-in of AI processors.
- Secured the first volume production orders from an AI processor customer for package part burn-in, utilizing recently acquired Sonoma ultra-high-power systems for high-volume production test and burn-in of AI processors.
- Secured the first gallium nitride (GaN) customer for high-volume production wafer level burn-in of GaN devices using Aehr FOX-XP platform.
Gayn Erickson, President and CEO of Aehr Test Systems, commented:
“We achieved significant progress on the key objectives we outlined at the start of the fiscal year, most notably expanding our product reach into additional large and fast-growing markets. Market diversification into artificial intelligence (AI) processors, gallium nitride power semiconductors, data storage devices, silicon photonics integrated circuits, and flash memory is driving new opportunities in terms of customers and revenue. This progress includes our wafer level burn-in solutions and also the success we’re achieving with the new semiconductor package part test and burn-in product line from the acquisition of Incal Technology we closed last August. The acquisition has led to the acceleration of our market diversification with particular success and leverage expanding our total available market (TAM) in AI processors.
“Last month, we reached a significant milestone by securing our first AI processor customer for wafer level burn-in. This includes initial volume production orders for multiple high-power FOX-XP systems and our proprietary WaferPakTM Contactors, which enable full wafer contact for testing and burn-in of AI processors in wafer form before system integration. This achievement represents a technological and commercial breakthrough for Aehr, significantly expanding the market potential for our FOX-XP wafer level test and burn-in systems.
“During the quarter, we secured our first production AI processor customer for package part burn-in, receiving initial volume production orders for multiple Sonoma ultra-high-power systems. This customer is a large-scale data center hyperscaler and provides computing power and storage capacity to millions of individuals and organizations worldwide. System shipments have already commenced to their contract manufacturer doing test and burn-in for them in Asia. We see a significant potential to expand our packaged part test and burn-in business with the product line acquired from Incal, and feel we are particularly well positioned to capitalize on opportunities in the rapidly growing AI semiconductor market with the ultra-high power Sonoma product line. We estimate that the combined wafer level and package part reliability test and production burn-in market for AI processors will exceed $100 million annually in the future, and with our comprehensive product portfolio we believe we can capture a meaningful share of this market.
“Last week we announced another exciting milestone with our first gallium nitride (GaN) semiconductor production order. This achievement expands our production wafer level burn-in market for power semiconductors beyond silicon carbide used in electric vehicles, data center power conversion, and solar to now include GaN, a high-performance compound semiconductor optimized for mid-power applications such as data centers, solar energy, automotive systems, and consumer computing. Over the past 12 months, we have collaborated with this lead customer using our FOX-NP system, leading to their purchase of multiple WaferPak reference designs for diverse GaN applications. GaN offers a broader application range than silicon carbide and is poised for significant growth in the coming decade. With an expected compound annual growth rate (CAGR) exceeding 40%, the GaN market is projected to surpass $2 billion in annual device sales by 2029, according to Yole Group’s Power SiC/GaN Compound Semiconductor Market Monitor. Additionally, Frost & Sullivan estimates GaN semiconductors will account for over 10% of the worldwide power semiconductor industry by 2028. This transformative technology represents a significant growth opportunity for Aehr’s wafer level test and burn-in solutions, positioning us to capitalize on the rapid expansion of the GaN market.
“In addition, we are excited about our opportunity for production burn-in and stabilization of devices used in hard disk drives using our FOX-CP systems and WaferPak Contactors. Our lead customer for this application is ramping this year and has told us that they will purchase multiple production systems from us over the next few quarters to support their planned new product rollout and ramp. This customer, first announced back in 2019 prior to the COVID-19 pandemic, initially purchased our FOX-CP single wafer test and burn-in solution to support the qualification and early test stages of this new product aimed at the enterprise and data center markets. We view the data storage market both for hard disk drives and flashed-based semiconductor solid-state disk drives as significant growth opportunities for our systems. These markets have applications with devices made up of multiple die in complex structures, or in multiple die stacked on top of each other before they are put into higher-level packages or systems. These devices require exceptionally high levels of quality and long-term reliability of the die before they are put into these packages or systems, which aligns perfectly with the capabilities of our wafer level test and burn-in systems.
“Aehr also continues to expand its presence in the silicon carbide power semiconductor market, a critical sector for power conversion for electric vehicle traction inverters, charging infrastructure, and a range of industrial, data center, and infrastructure applications. Based on recent market forecasts, growth in silicon carbide sales outside of China should remain challenging before recovering in calendar 2026. We believe we are well positioned in this market as we have a large customer base and are currently engaged in benchmarking efforts with multiple potential new silicon carbide customers around the globe, including in China. While we remain cautiously optimistic about the opportunities in China, we also recognize the geopolitical, trade, and intellectual property risks associated with this market. Recently, we filed a lawsuit in China against a local supplier for intellectual property infringement. This action relates to features of products by that company targeted at wafer level burn-in of silicon carbide devices that we believe infringe on Aehr’s intellectual property and patents granted to Aehr by the Chinese patent office. Our current fiscal year forecast includes contemplated orders and revenue yet to be booked for silicon carbide wafer level burn-in systems and WaferPaks destined for silicon carbide manufacturers in China. It is important to bring this to our shareholders attention, as recent trade-related developments in the U.S. and the emergence of competitive offerings in China that we believe infringe on our intellectual property have heightened the risk associated with bookings and revenue from Chinese customers.
“As we look at the composition of our total revenue for this fiscal year, silicon carbide is expected to account for less than half our total revenue as we have seen our expansion into additional markets capture real market share gains. AI processors, including wafer level and package parts, could comprise as much as 40% of our total revenue this fiscal year, up from effectively zero revenue last year. GaN, hard disk drives, silicon photonics integrated circuits, and other semiconductor package part revenues will comprise about another 20% of total revenue. We are not pivoting away from silicon carbide but rather are generating growth in these other markets while not seeing the growth in silicon carbide this year like we saw last year. According to recent market research from companies such as Yole, the estimated revenue for silicon carbide semiconductors in 2024 was around $2.5 billion and is expected to reach $10 billion by the end of the decade. To put this into perspective, the semiconductor market is projected to grow from about $600 billion overall in 2024 to over $1 trillion by the end of this decade, so silicon carbide will be about 1% of the overall semiconductor market by 2030.
“Aehr’s innovative solutions are poised to capitalize on this growth in the overall semiconductor market by addressing the critical reliability needs of next-generation applications and leveraging key megatrends shaping the semiconductor industry. Reliability has become a critical priority across a wide range of industries, including combustion and electric vehicles, data centers, electrification of the worlds infrastructure, and a wide range of AI applications. Factors such as smaller semiconductor geometries, the increasing adoption of compound and optical semiconductors, and the complexities of ensuring semiconductor reliability ever increasing power and performance of semiconductors and advanced packaging are driving the demand for wafer level and packaged part test and burn-in systems. Aehr’s solutions are instrumental in reducing early operational failures and ensuring long-term device performance in these rapidly advancing markets.
“With strong customer engagements, expanding market opportunities, and innovative products designed to meet evolving demands, we are optimistic as we move into the second half of our fiscal year and maintain our previously stated financial guidance for the fiscal year.
“As we’ve stated before, given the nature of our business with our high ASPs, our quarterly revenue can experience significant variability if system orders anticipated by quarter-end are delayed by even a few days. This was the case in this last quarter, and why we do not provide quarterly guidance. In the case of both our new GaN and wafer level AI customers, both requested pre-built systems that we fully expected to ship to them within the quarter. However, the purchase orders were not finalized until after the quarter ended. Looking past quarterly variations to the full year and beyond, we are excited about the current and emerging market opportunities for our products, which not only position us for a successful fiscal year, but also lay a solid foundation for long-term, sustainable growth in the years ahead.”
Fiscal 2025 Financial Guidance:
For the fiscal year ending May 30, 2025, Aehr is reiterating its previously provided guidance for total revenue of at least $70 million and non-GAAP net profit before taxes of at least 10% of revenue.
Original – Aehr Test Systems
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MCC Semi introduced the first high-voltage MOSFET with Kelvin source pin in the compact DFN8080A package. Designed to help engineers balance costs and performance, 600V MSJL120N60FH leverages superjunction technology and an integrated FRED body diode to facilitate high-speed switching and recovery.
Its low gate charge and RDS(on) of only 100Ω (typ.) significantly improve switching speeds and reduce losses in a range of demanding applications. Featuring junction-to-case thermal resistance of 0.47K/W, this MOSFET assures reliable operation in high-temp environments, making it an intelligent choice for motor drives, solar inverters, industrial controllers, and power supplies.
With a height of less than 1mm, its low-profile DFN8080A package is well-suited for high-frequency applications where space is limited, and performance is mission-critical.
For engineers looking to boost efficiency and minimize losses, MSJL120N60FH boasts the perfect combination of features for high-voltage, space-constrained scenarios.
Features & Benefits:
- Superjunction technology: Enhances efficiency by reducing on-state resistance.
- Low on-resistance: Minimizes power dissipation at 100mΩ (typ.).
- Low conduction losses: Improves overall system efficiency.
- Low gate charge: Facilitates increased switching speeds.
- Kelvin source pin: Dramatically reduces switching losses while enhancing efficiency.
- Excellent thermal resistance: Junction-to-case thermal resistance of 0.47K/W ensures stable operation amid demanding conditions.
- Integrated FRED body diode: Reduces reverse recovery time for improved switching.
- High-speed switching: Optimal for high-frequency applications.
- Compact package size: DFN8080A package with a low-profile height of less than 1mm, perfect for space-constrained designs.
Original – Micro Commercial Components
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Renesas Electronics Corporation introduced new 100V high-power N-Channel MOSFETs that deliver industry-leading high-current switching performance for applications such as motor control, battery management systems, power management and charging. End products include electric vehicles, e-bikes, charging stations, power tools, data centers, uninterruptable power supplies (UPS) and more.
Renesas has developed a new MOSFET wafer manufacturing process (REXFET-1) that enables the new devices to drastically reduce on-resistance (the resistance between the drain and source when the MOSFET is on) by 30 percent. The lower on-resistance contributes to much lower power loss in customer designs.
The REXFET-1 process also enables the new MOSFETs to offer a 10 percent reduction in Qg characteristics (the amount of charge needed to apply voltage to a gate), and a 40 percent reduction in Qgd (the amount of charge that needs to be injected into the gate during the “Miller Plateau” phase).
In addition to superior electrical characteristics, Renesas’ new RBA300N10EANS and RBA300N10EHPF MOSFETs are available in industry-standard TOLL and TOLG packages that are pin-compatible with devices from other manufacturers, and 50 percent smaller than traditional TO-263 packages. The TOLL package also offers wettable flanks for optical inspection.
“Renesas has been a leader in the MOSFET market for many years,” said Avi Kashyap, Vice President of Discrete Power Solutions BU at Renesas. “As we apply our manufacturing muscle to this market, we can provide customers with superior technical products, as well as assurance of supply from multiple high-volume facilities.”
Renesas has combined the new MOSFETs with numerous compatible devices from its portfolio to offer a wide array of Winning Combinations, including among others, 48V Mobility Platform and 3-in-1 Electric Vehicle Unit: Inverter, Onboard Charger, DC/DC Converter. These designs are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market.
Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly. They can be found at renesas.com/win.
Original – Renesas Electronics
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Toyoda Gosei’s technology to enhance GaN substrates has been verified to improve power device performance. An article confirming it was published in Physica Status Solidi (RRL) – Rapid Research Letters, an international scientific journal for solid state physics.
Better power devices are indispensable for CO2 reduction in society, as they regulate electric power everywhere. Switching material from silicon to gallium nitride enables 90% energy-saving, superior devices, for which mass production of larger quality GaN substrates is requisite.
The Japanese Ministry of the Environment is leading a project for broad application of GaN power devices, for which Toyoda Gosei is providing technology to obtain ideal GaN crystals. One outcome of the project is a demonstrable improvement in power device performance with a GaN substrate fabricated on a GaN seed crystal that Toyoda Gosei jointly developed with Osaka University. Compared to power devices made on commercially-available substrates, power devices using these GaN substrates show higher performance in both power regulation capacity and yield ratio.
Toyoda Gosei will continue collaborating with government, universities, and other corporations for earlier dissemination of large quality GaN substrates.
Original – Toyoda Gosei
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Aehr Test Systems has received an initial production order from a top tier automotive semiconductor supplier for a FOX-XP™ wafer level test and burn-in system with fully integrated FOX WaferPak™ Aligner for production test of their gallium nitride (GaN) power semiconductor devices. The FOX-XP system with integrated WaferPak Aligner is scheduled to ship immediately.
Gayn Erickson, President and CEO of Aehr Test Systems, commented, “We have been working closely with this customer for over a year to support their evaluation and qualification process for delivering GaN power semiconductor devices to their customers. We are thrilled to receive this initial production purchase order, signaling their commitment to move forward with volume production wafer level burn-in of their GaN devices on our FOX-XP platform.
“This customer has extensively utilized a FOX-NP system under an evaluation agreement for production qualification and reliability testing of their devices over the past year. As part of the evaluation, they purchased a significant number of our proprietary WaferPak full wafer Contactors to successfully qualify a wide range of GaN device types designed for multiple end use applications including industrial, solar, data center, and automotive markets.
“Our FOX-P platform allows customers using the FOX-NP for device qualification and reliability testing of power semiconductors like GaN and silicon carbide (SiC) to transition seamlessly to the FOX-XP multi-wafer fully automated system, which is capable of testing up to nine wafers in parallel and is specifically designed to handle high-voltage testing and high temperature Gate and Drain stress test requirements. By leveraging our FOX-XP system and our proprietary WaferPak full wafer Contactors, customers can easily test wafers of varying sizes from 6 to 12 inches by simply purchasing new WaferPaks, while utilizing the same FOX-XP system and FOX WaferPak Aligner.
“Like SiC, GaN semiconductor MOSFETs are wide bandgap devices that offer significantly higher power conversion efficiency than silicon. GaN is particularly well suited for lower power applications such as sub-1000-watt power converters (fast chargers) used in consumer electronics like cell phones, tablets, and laptops. Additionally, it is increasingly being adopted for automotive power converters, supporting electrical systems in both electric and traditional gasoline-powered cars, as well as being targeted at data center power applications where power efficiency and delivery are critical to support the massive amount of computing power and data storage being installed over the next decade. Along with the increased usage in automotive and data centers, many industry experts and analysts predict that GaN MOSFETs will eventually replace silicon as the preferred technology for power conversion in photovoltaic (solar panel) applications.
“We view GaN as a transformative and rapidly growing technology in the power semiconductor market. With an anticipated compound annual growth rate of more than 40%, the GaN market is projected to reach $2.5 billion in annual device sales by 2029 according to Yole Group’s Power SiC/GaN Compound Semiconductor Market Monitor. In addition, Frost & Sullivan estimates GaN semiconductors will account for over 10% of the worldwide power semiconductor industry by the year 2028. This represents a significant growth opportunity for Aehr’s wafer level test and burn-in solutions.”
The FOX-XP and FOX-NP systems, available with multiple WaferPak Contactors (full wafer test) or multiple DiePakTM Carriers (singulated die/module test) configurations, are capable of functional test and burn-in/cycling of devices such as silicon carbide and gallium nitride power semiconductors, artificial intelligence processors, silicon photonics as well as other optical devices, 2D and 3D sensors, flash memories, magnetic sensors, microcontrollers, and other leading-edge ICs in either wafer form factor, before they are assembled into single or multi-die stacked packages, or in singulated die or module form factor.
Original – Aehr Test Systems
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Mitsubishi Electric Corporation announced that it will begin shipping samples of two new S1-Series High Voltage Insulated Gate Bipolar Transistor (HVIGBT) modules, both rated at 1.7kV, for large industrial equipment such as railcars and DC power transmitters from December 26. Thanks to proprietary Insulated Gate Bipolar Transistor (IGBT) devices and insulation structures, the new modules offer excellent reliability and low power loss and thermal resistance, which are expected to increase the reliability and efficiency of inverters in large industrial equipment.
Mitsubishi Electric’s 1.7kV HVIGBT modules, first released in 1997 and highly regarded for their excellent performance and high reliability, have been widely adopted for inverters in power systems.
The new S1-Series modules incorporate Mitsubishi Electric’s proprietary Relaxed Field of Cathode (RFC) diode, which increases the Reverse Recovery Safe Operating Area (RRSOA) by 2.2 times compared to previous models for improved inverter reliability. In addition, the use of an IGBT element with a Carrier Stored Trench Gate Bipolar Transistor (CSTBT) structure helps reduce both power loss and thermal resistance for more efficient inverters.Furthermore, Mitsubishi Electric’s proprietary insulation structure increases the insulation voltage resistance to 6.0kVrms, 1.5 times that of previous products, resulting in more flexible insulation designs for compatibility with a wide range of inverter types.
Original – Mitsubishi Electric
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EPC Space announced that both its Andover, Massachusetts facility and its wafer fabrication facility in Taiwan have been certified under the JANS MIL-PRF-19500 standard.
This certification marks a significant milestone, highlighting EPC Space’s commitment to excellence and its role as a leader in providing top-tier semiconductor solutions for critical space applications. The MIL-PRF-19500 certification, managed by the U.S. Department of Defense, sets the bar for reliability, performance, and environmental resilience in semiconductor components. EPC Space’s achievement in obtaining this certification for Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) is a world first.
Bel Lazar, CEO of EPC Space, commented, “Securing the JANS certification is a direct result of our relentless pursuit of quality. Our teams have worked tirelessly to ensure our products not only meet but exceed the expectations for reliability in the most demanding conditions.”
Alex Lidow, CEO of EPC Corporation, commented, “that the commitment to the MIL-PRF-19500 standard not only guarantees the durability and performance of EPC Space’s products but also reinforces the company’s dedication to supporting its customers in achieving their critical objectives.”
Looking ahead, EPC Space is set to launch 18 JANS certified Rad Hard GaN HEMT parts, ranging from 40V to 300V, throughout 2025. This expansion will further solidify EPC Space’s role as a key supplier of high-reliability electronics, crucial for space missions and other high-stakes applications.
Original – EPC Space
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Texas Instruments and the U.S. Department of Commerce announced an award agreement of up to $1.6 billion in direct funding through the U.S. CHIPS and Science Act, following the preliminary memorandum of terms announced in August 2024.
The funding will help support three of TI’s new 300mm wafer fabs currently under construction in Texas and Utah. Support from the CHIPS Act, including the 25% investment tax credit, will help TI provide a geopolitically dependable supply of essential analog and embedded processing semiconductors.
“As the largest analog and embedded processing semiconductor manufacturer in the U.S., TI is uniquely positioned to provide dependable, low-cost 300mm semiconductor manufacturing capacity at scale,” said Haviv Ilan, president and CEO of Texas Instruments. “The increasing number of electronic devices in our lives depend on our foundational chips, and we appreciate the support from the U.S. government to make the semiconductor ecosystem stronger and more resilient.”
The CHIPS Act direct funding will support TI’s investments through 2029 for three large-scale 300mm wafer fabs in Sherman, Texas (SM1 and SM2), and Lehi, Utah (LFAB2). Together, these fabs will manufacture tens of millions of analog and embedded processing chips every day that are critical to a variety of end markets, including automotive, industrial, personal electronics, communications equipment and enterprise systems.
Specifically, the CHIPS Act direct funding will be distributed upon completion of project milestones, supporting:
- Cleanroom construction and tool installations at SM1 in Sherman, Texas;
- Shell construction of SM2, a second fab in Sherman, Texas; and
- Cleanroom construction and tool installations at LFAB2, a second fab in Lehi, Utah.
These connected, multi-fab sites in Texas and Utah will benefit from shared infrastructure, talent and technology sharing, and a strong network of existing suppliers and community partners.
Combined, TI’s three new fabs in Texas and Utah will create 2,000 company jobs, along with thousands of indirect jobs for construction, suppliers and supporting industries. TI is also investing in building its future workforce. As part of the CHIPS Act award agreement, TI will also receive up to $10 million for workplace development efforts in Texas and Utah.
Consistent with TI’s longstanding commitment to responsible, sustainable manufacturing and environmental stewardship, the company’s 300mm wafer fabs will be entirely powered by renewable electricity. Additionally, TI is committed to reducing overall water consumption across its operations, endeavoring to achieve a 70% water reuse capability in Sherman, Texas, and Lehi, Utah. All of TI’s new 300mm fabs are also designed to meet LEED Gold standards for structural efficiency and sustainability.
Original – Texas Instruments
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GlobalFoundries has joined the LOT Network, the world’s largest patent licensing platform and non-profit community of global companies committed to protecting themselves against costly litigation from patent assertion entities (PAEs). With this move, GF joins a community of more than 4,500 companies that include half of the top 20 largest U.S. patent holders, and half of the S&P Global 100 and Fortune 100.
Semiconductors play an ever-increasing and vital role in driving innovation, enabling diverse applications across high-growth markets such as artificial intelligence, automotive, smart devices and advanced healthcare technologies. With a global footprint spanning three continents, GF is a leading innovator of differentiated essential chip technologies and has added its nearly 10,000 global patent assets in semiconductor manufacturing, test, and design to the protections of LOT Network.
PAEs, referred to by some as “patent trolls”, are responsible for more than 87 percent of all patent litigation against the high-tech industry. Many of the patents used are acquired from the industry itself and are used by the PAEs to profit through litigation against other members of the industry.
GF’s membership in LOT Network protects the company and minimizes litigation risk, allowing the company to focus on innovation that will drive advancements in smarter, more secure, connected and efficient devices. LOT Network membership provides a global shield, with members from 56 different countries.
“Semiconductors are the key building blocks for so many products that the world relies on to live, work and connect. We are committed to protecting our technology and securely manufacturing the essential chips our customers, partners and industry rely on,” said Adam Noah, Chief IP Counsel at GF. “By joining the LOT Network, we are further safeguarding our business and our customers against PAE litigation, allowing us to focus on the important work of delivering world-class technology solutions. We encourage others within the semiconductor manufacturing and design ecosystem to address the PAE drain on resources by joining LOT’s protective community, which provides strength in numbers.”
“GF is the perfect role model for a U.S.-based semiconductor supplier,” said Ken Seddon, CEO of LOT Network. “Not only are they protecting their business, but they are also protecting their customers, as all GF products now come with free immunization to over 20 percent of all US patents. GF is a semiconductor visionary for recognizing the critical role it plays in the protection not just of the semiconductor industry, but the many verticals that rely upon its technologies as well.”
Original – GlobalFoundries
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Littelfuse, Inc. announced the launch of its TPSMB Asymmetrical TVS Diode Series, the first-to-market asymmetrical transient voltage suppression (TVS) diode specifically designed for the protection of Silicon Carbide (SiC) MOSFET gate drivers in automotive applications.
This innovative product addresses the increasing demand for reliable overvoltage protection in next-generation electric vehicle (EV) systems, delivering a compact, single-component solution that replaces multiple Zener diodes or TVS components traditionally used for gate driver protection. View the video.
The TPSMB Asymmetrical TVS Diode Series provides superior protection for SiC MOSFET gate drivers, which are prone to overvoltage events due to faster switching speeds compared to traditional silicon-based MOSFETs or IGBTs. The unique asymmetrical design of the TPSMB Series supports SiC MOSFETs’ differing positive and negative gate driver voltage ratings, ensuring enhanced performance in a variety of demanding automotive power applications where SiC MOSFETs are used, including:
- Onboard chargers (OBCs)
- EV traction Inverters
- I/O interfaces
- Vcc buses
These applications demand high-performance overvoltage protection (OVP) for SiC MOSFET gate drivers to ensure optimal performance, longevity, and efficiency.
Charlie Cai, Director of Product Management, Protection Business, Littelfuse, emphasizes the value this product brings to automotive engineers: “The TPSMB Asymmetrical TVS Diode Series offers an innovative solution for SiC MOSFET gate driver protection, eliminating the need for multiple components and simplifying the design process for engineers. Its compact, reliable design ensures that critical automotive power systems are safeguarded against overvoltage events, supporting the continued advancement of electric vehicles and other high-performance applications.”
The TPSMB Asymmetrical Series Surface-Mount TVS Diode offers the following key features and benefits:
- A Single-Component SiC MOSFET Gate Driver Protection: Eliminates the need for multiple Zener or TVS diodes, streamlining design and reducing component count.
- Asymmetrical Gate Driver Voltage Protection: Designed to protect SiC MOSFET gate drivers, which require different negative and positive voltage ratings.
- Compact Design: Available in a DO-214AA (SMB J-Bend) package, the series is ideal for space-constrained automotive designs.
- Automotive-Grade Quality: AEC-Q101-qualified, ensuring the highest reliability for automotive applications.
- High Power Dissipation: 600W peak pulse power dissipation (10×1000μs waveform) offers robust protection against transient overvoltage events.
- Low Clamping Voltage: VC < 10 V @ 30 A (8/20 µs) for optimal negative gate drive protection.
- Wide Frequency Stability: Stable capacitance across a wide operating frequency range, up to 2 MHz, making it ideal for SiC MOSFET applications.
- Compatible with Leading SiC MOSFETs: Suited for use with Littelfuse and other market-leading automotive SiC MOSFETs.
Original – Littelfuse
