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Toshiba Electronic Devices & Storage Corporation has added DTMOSVI(HSD), power MOSFETs with high-speed diodes suitable for switching power supplies, including data centers and photovoltaic power conditioners, to its latest-generation DTMOSVI series with a super junction structure. Shipments of the first two products “TK042N65Z5” and “TK095N65Z5,” 650V N-channel power MOSFETs in TO-247 packages, start today.
The new products use high-speed diodes to improve the reverse recovery characteristics important for bridge circuit and inverter circuit applications. Against the standard DTMOSVI, they achieve a 65% reduction in reverse recovery time (trr), and an 88% reduction in reverse recovery charge (Qrr) (measurement conditions: -dIDR/dt= 100A/μs).
The DTMOSVI(HSD) process used in the new products improves on the reverse recovery characteristics of Toshiba’s DTMOSIV series with high-speed diodes (DTMOSIV(HSD)), and has a lower drain cut-off current at high temperatures. The figure of merit “drain-source On-resistance × gate-drain charges” is also lower. The high temperature drain cut-off current of TK042N65Z5 is approximately 90% lower, and the drain-source On-resistance × gate-drain charge 72% lower, than in Toshiba’s current TK62N60W5.
This advance will cut equipment power loss and help to improve efficiency. The TK042N65Z5 shows a maximum improvement in power supply efficiency over the current TK62N60W5 of about 0.4%, as measured in a 1.5kW LLC circuit.
A reference design, “1.6 kW Server Power Supply (Upgraded)”, that uses TK095N65Z5 is available on Toshiba’s website today. The company also offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available.
Toshiba plans to expand the DTMOSVI(HSD) line-up with the release of devices in TO-220 and TO-220SIS through-hole packages, and TOLL and DFN 8×8 surface-mount packages.
The company also will continue to expand its line-up of the DTMOSVI series beyond the already released 650V and 600V products and the new products with high-speed diodes. This will enhance switching power supply efficiency, contributing to energy-saving equipment.
Original – Toshiba
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SwissSEM received JD Energy 2023 Outstanding Contribution Award. The Outstanding Contribution Award harvested in 2023 is not only JD Energy’s affirmation of SwissSEM’s product performance and service quality, but also demonstrates its confidence in SwissSEM’s future development. SwissSEM will continue to strengthen exchanges and cooperation with customers, and strive to the international first-class level of domestic boutique power semiconductors, to help China’s new energy industry take off.
JD Energy is a company founded in 2018, relying on Xi’an Jiaotong University, jointly founded by industry-renowned power electronics technology experts and a group of senior engineers with more than 10 years of development experience. JD Energy is committed to technical research and product development of core equipment in advanced energy storage systems, contributing industry-leading solutions to promote large-scale clean energy access and achieve global carbon neutrality goals, which is a key partner of SwissSEM.
Since 2022, SwissSEM has been a supplier to JD Energy, supplying 1200V ED-type modules to it in bulk for use in the energy storage converter, and has achieved a high product share in 2023. According to JD Energy’s feedback, SwissSEM’s module products are of excellent quality, with outstanding consistency and reliability, thoughtful after-sales technical support services, quick response time, and are trustworthy and excellent suppliers.
The Outstanding Contribution Award harvested in 2023 is not only JD Energy’s affirmation of SwissSEM’s product performance and service quality, but also demonstrates its confidence in SwissSEM’s future development. SwissSEM will continue to strengthen exchanges and cooperation with customers, and strive to the international first-class level of domestic boutique power semiconductors, to help China’s new energy industry take off.
Original – SwissSEM
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Infineon Technologies AG and ASE Technology Holding Co., Ltd. announced that definitive agreements were signed under which Infineon will sell two backend manufacturing sites, one in Cavite, Philippines and one in Cheonan, South Korea, to two fully owned subsidiaries of ASE, a leading provider of independent semiconductor manufacturing services in assembly and test.
The plants currently run under the entity names Infineon Technologies Manufacturing Ltd. – Philippine Branch (Cavite) and Infineon Technologies Power Semitech Co., Ltd. (Cheonan) and will be acquired by ASE Inc. and ASE Korea Inc. respectively. Post the transaction, ASE will assume operations with current employees, and further develop both sites to support multiple customers. As such, ASE and Infineon have also concluded long-term supply agreements under which Infineon will continue to receive previously established services as well as services for new products to support its customers and fulfill existing commitments.
Infineon’s manufacturing strategy, with a balanced operations footprint combining in-house and external manufacturing, is an important pillar of the company’s profitable growth path. By pooling manufacturing volumes in Cavite and Cheonan under a new owner and offering highest-quality manufacturing services to the overall industry, Infineon and ASE will be able to leverage mutual synergy potentials, thus generating attractive growth potentials for both companies.
“We have excellent, highly competent teams and a great track record of highest quality standards at both sites, Cavite and Cheonan,” said Alexander Gorski, EVP and Head of Backend Operations at Infineon. “ASE has been a trusted, strategic partner of Infineon for many years and will be an excellent new owner that will continue on this successful path and strengthen both fabs even further. The sale of our sites to ASE is in line with Infineon’s manufacturing strategy, provides mutual synergies and enables further growth while strengthening supply chain resilience”.
“Both the automotive and power management market segments are strategic focus areas for ASE,“ said Dr. Tien Wu, Chief Operating Officer of ASE. “This acquisition of Infineon’s facilities in Cavite and Cheonan marks ASE’s strong commitment to form a strategic long-term partnership with Infineon in developing backend manufacturing solutions matching future growth opportunities. Given Infineon’s market leadership in automotive and power semiconductors and ASE’s leading position in backend semiconductor manufacturing, this partnership creates a win-win solution for the entire ecosystem from product companies to the end consumer.”
Infineon Technologies Power Semitech is a backend manufacturing site with around 300 employees. The fab is located in Cheonan, South Korea, about 60 miles south of Seoul. Infineon Technologies Cavite, is a backend manufacturing site with more than 900 employees. It is located in one of the fastest growing and most industrialized provinces in the Philippines.
The transaction is expected to close towards the end of the second calendar quarter of 2024, when all pending closing conditions will have been fulfilled.
Original – Infineon Technologies
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Ideal Power Inc. announced the successful completion of Phase II deliverables of a product development agreement with Stellantis, a top 10 global automaker.
Ideal Power is partnering with Stellantis’ advanced technology development team to develop a custom B-TRAN™ power module for use in electric vehicle (“EV”) drivetrain inverters in Stellantis’ next generation EV platform. Due to its compelling advantages, B-TRAN™ is also being evaluated for the automaker’s vehicle power management and EV charging ecosystem.
All Phase I deliverables were successfully completed including a wafer run and delivery of packaged and tested B-TRAN™ devices and test boards to both Stellantis and the program’s packaging company. Ideal Power also provided technical support, device characterization and test data to Stellantis on B-TRAN™ performance and related drive circuitry. The B-TRAN™ devices delivered to Stellantis outperformed the device performance specifications provided to Stellantis at the beginning of the program.
All Phase II deliverables were successfully completed ahead of schedule including a wafer run and delivery of tested B-TRAN™ devices and drivers to both the program’s packaging company and the organization building the initial drivetrain inverter. In Phase II, Ideal Power collaborated closely with Stellantis and the program partners to supply B-TRAN™ devices for integration into the custom power module and inverter designs.
The device testing results by the Stellantis program team validated the expected efficiency improvements anticipated from B-TRAN™ use in the drivetrain and its readiness for implementation in EV applications. Stellantis also approved the comprehensive reliability test plan for automotive qualification provided by Ideal Power.
Phase III builds on the completion of all Phase I and II deliverables and therefore transitions to Stellantis’ production team. Ideal Power and Stellantis are currently finalizing the scope of work for the next phase of the program. This phase is expected to include the extensive testing of the custom B-TRAN™ module to meet automotive certification standards enabling B-TRAN™ to be the core of the powertrain inverter for the automaker’s next-generation EVs. The objective of this phase is the completion and certification of a production-ready B-TRAN™-based module and is targeted for 2025.
“We’re thrilled with the success of both Phase I and II and advancement into the next phase of the program with Stellantis. Successful completion of Phases I and II were customer validation of the performance of B-TRAN™ and its potential impact in improving EV range and cost,” said Dan Brdar, President and Chief Executive Officer of Ideal Power. “We are leveraging our success with Stellantis to attract and engage other automobile OEMs and Tier 1 auto suppliers.”
This program represents Ideal Power’s second engagement with the world’s leading automotive manufacturers as another top 10 global automaker is already in company’s test and evaluation program.
Original – Ideal Power
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CISSOID will be exhibiting at APEC 2024 – the IEEE Applied Power Electronics Conference and Exposition. The conference will take place in Long Beach, California from February the 25th to the 29th. You can find CISSOID on the booths of partners Silicon Mobility (booth 452) & NAC Semi (booth 2035).
On this occasion, CISSOID will unveil the latest of their SiC offering. CISSOID will display the Intelligent power module, a complete SiC Inverter Reference Design, and a newly released product.
CISSOID’s latest IPM design offers the best SiC Gate driver technology in a compact form factor. Company’s SiC Inverter Reference Design offers a complete Inverter assembly with DC-link Capacitor, EMI Filter, DC and phase current sensors, active discharge circuit & reference cooling. It is built around CISSOID’s Inverter Control Module which will be released soon.
Inverter Control Module sneak peak, the complete offering will be unveiled on the conference floor.
Original – CISSOID
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Vishay Intertechnology, Inc. introduced five new half-bridge IGBT power modules in the newly redesigned INT-A-PAK package. Built on Vishay’s Trench IGBT technology, the VS-GT100TS065S, VS-GT150TS065S, VS-GT200TS065S, VS-GT100TS065N, and VS-GT200TS065N offer designers a choice of two best in class technologies — low VCE(ON) or low Eoff — to lower conduction or switching losses in high current inverter stages for transportation, energy, and industrial applications.
The half-bridge devices released today combine Trench IGBTs — which deliver improved power savings versus other devices on the market — with Gen IV FRED Pt® anti-parallel diodes with ultra soft reverse recovery characteristics. Offering a new gate pin orientation, the modules’ compact INT-A-PAK package is now 100 % compatible with the 34 mm industry-standard package to offer a mechanical drop-in replacement.
The industrial-level devices will be used in power supply inverters for railway equipment; energy generation, distribution, and storage systems; welding equipment; motor drives; and robotics. To reduce conduction losses in output stages for TIG welding machines, the VS-GT100TS065S, VS-GT150TS065S, and VS-GT200TS065S offer an industry-low collector to emitter voltage of ≤ 1.07 V at +125 °C and rated current. For high frequency power applications, the VS-GT100TS065N and VS-GT200TS065N offer extremely low switching losses, with Eoff down to 1.0 mJ at +125 °C and rated current.
The RoHS-compliant modules feature 650 V collector to emitter voltages, continuous collector current from 100 A to 200 A, and very low junction to case thermal resistance. UL-approved file E78996, the devices can be directly mounted to heatsinks and offer low EMI to reduce snubbing requirements.
Device Specification Table:
Part # VCES IC VCE(ON) Eoff Speed Package @ IC and +125 °C VS-GT100TS065S 650 V 100 A 1.02 V 6.5 mJ DC to 1 kHz INT-A-PAK VS-GT150TS065S 650 V 150 A 1.05 V 10.3 mJ DC to 1 kHz INT-A-PAK VS-GT200TS065S 650 V 200 A 1.07 V 13.7 mJ DC to 1 kHz INT-A-PAK VS-GT100TS065N 650 V 100 A 2.12 V 1.0 mJ 8 kHz to 30 kHz INT-A-PAK VS-GT200TS065N 650 V 200 A 2.13 V 3.86 mJ 8 kHz to 30 kHz INT-A-PAK Original – Vishay Intertechnology
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Navitas Semiconductor announced that its GaNFast™ power ICs drive Samsung’s 25 W “Super-Fast Charging” (SFC) for the new, AI-enhanced Galaxy S24 smartphone.
Flagship hardware specifications include a 2340 x 1080 (FHD+) dynamic AMOLED 2X, and 120 Hz screen, plus the Galaxy S24 delivers innovative and practical AI features to help transform the way users communicate, create and discover the world. Galaxy AI features like Live Translate, Chat Assist and new “Circle to Search” with Google, to improve nearly every experience that S24 users can enjoy.
The 25 W GaNFast unit delivers 50% charge to the high-capacity 4000 mAh battery in only 30 minutes, while the USB PD 3.0 (Type-C) specification makes it compatible with other Samsung products including Galaxy Buds2 audio, Galaxy Z Fold5, Galaxy Flip and Galaxy A23.
Designed with sustainability in mind, the 25 W power adapter features a 75% reduction in power consumption sleep mode. Navitas’ GaNFast technology is deployed in a high-frequency, quasi-resonant (HFQR) topology running at 150 kHz – 3x faster than standard silicon designs – and delivers a 30% size shrink vs. conventional charger designs.
“We are excited to extend our relationship with Samsung as they continue to develop groundbreaking mobile phone technology,” said David Carroll, Sr. VP Worldwide Sales for Navitas. “Deploying GaNFast ICs has allowed Samsung to create an ultra-compact, lightweight and efficient 25W adapter that can rapidly re-charge the new Galaxy S24 and a variety of other phones and accessories in the Samsung range.”
Original – Navitas Semiconductor
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Aehr Test Systems announced it has received new follow-on orders totaling $23 million from existing customers for FOXTM wafer level test and burn-in products to be used for production and engineering qualification needs for wafer level burn-in and screening of their silicon carbide devices. Customer-requested ship dates for these orders range from immediate shipment through the end of Aehr’s current fiscal year, which ends May 31, 2024.
The orders include a significant number of FOX WaferPakTM full wafer Contactors for both current design capacity increases as well as new device designs that are expected to drive additional orders in calendar year 2024 and beyond.
FOX WaferPak Contactors are used in conjunction with the company’s FOX-NP and FOX-XP wafer level test and burn-in systems to contact 100% of the die on a wafer up to several thousand devices at a time. These proprietary WaferPak designs are specific to a customer’s application as well as die layout and unique electrical contact pads. Aehr’s FOX systems and WaferPaks are currently being used on wafer sizes ranging from 4”, 6”, 8” and 12” wafers and can be configured for a wide range of device applications.
Gayn Erickson, President and CEO of Aehr Test Systems, commented, “We are excited to help our customers meet their new design and production capacity needs with our industry-leading lead times and capacity for wafer level stress tests, screening, stabilization, and burn-in. Our proprietary WaferPak Contactors are unique to each end customer’s device design and grow with the number of device designs and capacity needed for volume production of those devices. As we have stated in the past, we are able to quickly ship a large quantity of WaferPaks with very short lead times with our increased design resources, optimized supply chain, and manufacturing and test processes. We continue to believe our WaferPak business will grow in absolute revenue and also as a percent of the overall revenue for the company. In addition, we have increased our material availability and manufacturing capacity to shorten lead times on our FOX-NP and FOX-XP test and burn-in systems and automated FOX WaferPak Aligners.”
The FOX-XP and FOX-NP systems and proprietary WaferPaks are capable of functional test and burn-in/cycling of silicon carbide and gallium nitride power semiconductors, silicon photonics integrated circuits as well as other optical devices, 2D and 3D sensors, flash memories, magnetic sensors, microcontrollers, and other leading-edge ICs in either wafer form factor before they are assembled into single or multi-die stacked packages, or in singulated die or module form factor.
Original – Aehr Test Systems
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Innoscience Technology will demonstrate industry-leadership at the upcoming IEEE Applied Power Electronics Conference and Exposition (APEC) 2024.
At the industrial session, Innoscience will address the exponential demand in power by datacenters due to the processing power necessitated by Artificial Intelligence (AI) applications. The paper will show that with Innoscience’s 650V InnoGaN, it is possible to make a 2kW AC/DC conversion PSU with a high power density and a peak efficiency above 96%, thereby meeting the recent stringent 80 Plus titanium efficiency rating.
Thanks to the absence of a body diode on GaN devices, a simple Totem pole PFC architecture can be implemented while still reaching high levels of efficiency. At the booth Innoscience will also showcase a 4.2kW AC/DC conversion PSU meeting 80 Plus titanium efficiency rating within a power density of 130W/in3.
Moreover, to address the 48V to 12V DC-DC power conversion inside the data center, Innoscience will present an all GaN HEMTs based 1kW 48V-12V unregulated LLC solution that features GaN power devices both at the primary side (100V devices) as well as at the secondary side (40V devices). In order to maximize the power density and simplify the circuit, the solution uses Innoscience’s recent integrated SolidGaN solution (ISG3201), which integrates an half-bridge (made by two 100V/3.2mOhm InnoGaN devices) with its driver, protection etc.. in one package. The final all GaN 1kW 48V-12 converter has a size of only 50mmx30mmx9mm, which is 70% smaller than a Silicon counterpart rated only 600W. The converter achieves a peak efficiency of 98.5%.
Dr. Denis Marcon, General Manager Innoscience Europe, comments: “Reliability is also an important consideration for data centers, because they operate 24/7 and they must guarantee continuity of service. Therefore, in this paper we will also present strong reliability data of Innoscience’s HV and LV GaN power devices, including end-of-life testing for life-time calculation which shows reliability data at the parts-per-billion level.”
Yi Sun, General Manager Innoscience America comments: “Innoscience today has one of the widest portfolio of GaN power device solutions covering 30V to 700V applications, a family of GaN discrete available in standard packages (e.g. QFN, FCQFN, TO252 etc..) as well as integrated GaN IC solutions that include in one chip the GaN FET, the driver, protections etc.”
Visitors to the Innoscience booth at APEC will also see new products, such as the NV100FQ030A, a 100V bidirectional IC that can be employed to deliver high efficiency in applications including battery management systems, high-side load switching in bidirectional converters, and various switching circuits in power systems.
Yi Sun, adds: “Innoscience is leading the GaN industry with many new products that are industry firsts. That is why our devices are finding applications in all markets, from consumer chargers through industrial and communications and into the automotive sector. Join us at booth 1543 to find out more.”
Innoscience presentations:
- IS02.7 – Industry Session / Tuesday Feb 27th ,11:30-11:55am “Ultra-High Frequency (10MHz) Buck Converter with GaN HEMT for Mobile Phone Application” given by Dr Pengju Kong
- IS11.1 – Industry Session / Wednesday Feb 28th, 8:30-8:55am “Efficient and compact power conversions made possible with GaN technology” given by Dr Pengju Kong.
Original – Innoscience Technology
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The electrification of everything is driving the widespread adoption of Silicon Carbide (SiC) technology in medium-to-high-voltage applications like transportation, electric grids and heavy-duty vehicles. To help developers implement SiC solutions and fast-track the development process, Microchip Technology introduced the 3.3 kV XIFM plug-and-play mSiC™ gate driver with patented Augmented Switching™ technology, which is designed to work out-of-the-box with preconfigured module settings to significantly reduce design and evaluation time.
To speed time to market, the complex development work of designing, testing and qualifying a gate driver circuit design is already completed with this plug-and-play solution. The XIFM digital gate driver is a compact solution that features digital control, an integrated power supply and a robust fiber-optic interface that improves noise immunity. This gate driver has preconfigured “turn-on/off” gate drive profiles that are tailored to optimize module performance.
It incorporates 10.2 kV primary-to-secondary reinforced isolation with built-in monitoring and protection functions including temperature and DC link monitoring, Undervoltage Lockout (UVLO), Overvoltage Lockout (OVLO), short-circuit/overcurrent protection (DESAT) and Negative Temperature Coefficient (NTC). This gate driver also complies with EN 50155, a key specification for railway applications.
“As the silicon carbide market continues to grow and push the boundaries of higher voltage, Microchip makes it easier for power system developers to adopt wide-bandgap technology with turnkey solutions like our 3.3 kV plug-and-play mSiC gate driver,” said Clayton Pillion, vice president of Microchip’s silicon carbide business unit. “By having the gate drive circuitry preconfigured, this solution can reduce design cycle time by up to 50% compared to a traditional analog solution.”
With over 20 years of experience in the development, design, manufacturing and support of SiC devices and power solutions, Microchip helps customers adopt SiC with ease, speed and confidence. Microchip’s mSiC™ products include SiC MOSFETS, diodes and gate drivers with standard, modified and custom options.
Original – Microchip Technology
