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SemiQ Inc has announced the QSiC 1200V MOSFET, a third-generation SiC device that shrinks the die size while improving switching speeds and efficiency.
The device is 20% smaller versus QSiC’s second-generation SiC MOSFETs and has been developed to increase performance and cut switching losses in high-voltage applications. SemiQ is targeting a diverse range of markets including EV‑charging stations, solar inverters, industrial power supplies and induction heating.
It will be on display for the first time at the Applied Power Electronics Conference (APEC), on March 16-20, 2025.
In addition to having a drain-to-source voltage (VDS) of 1200 V, the MOSFET reduces total switching losses to 1646 µJ and has a low on-resistance (RDS,on) of 16.1 mΩ. It is available as a bare die or in a four-pin TO-247 4L discrete package measuring 31.4 x 16.1 x 4.8 mm, which includes a reliable body diode and a driver-source pin for gate driving.
High-quality Known Good Die (KGD) testing has been conducted using UV tape and Tape & Reels, with all parts undergoing testing and verification at voltages exceeding 1400V, as well as being avalanche tested to 800 mJ. Reliability is further improved through the device’s 100% wafer-level gate oxide burn-in screening and 100% UIL testing of discrete packaged devices.
The device has been developed to have a low reverse recovery charge (QRR 470 nC) and lower capacitance, improving switching speed, switching losses, EMI and overall efficiency; to be easy to parallel; and with a longer creepage distance (9 mm), improving electrical insulation, voltage tolerance and reliability.
Dr. Timothy Han, President at SemiQ said: “The move to Gen3 SiC further increases the benefits of SiC MOSFETs over IGBTs. These devices not only deliver vastly improved performance, but cut die size and cost versus previous generations. As a result, the launch of the QSiC 1200V opens the technology, and its benefits, to a far greater range of applications. The device delivers industry leading performance figures, notably on gate threshold voltage, and we’re delighted to be demonstrating this first at APEC.”
The QSiC 1200V MOSFETs has a continuous operational and storage temperature of -55oC to 175oC. It has a recommended operational gate-source voltage of -4/18 V, with a VGSmax of -8/22 V, and a power dissipation of 484 W (core and junction temperature 25oC).
For static electrical characteristics, the device has a junction-to-case thermal resistance of 0.26oC per watt (40oC per watt junction to ambient). Its Zero gate voltage drain current is 100 nA, with a gate-source voltage current of 10 nA. Its AC characteristics include a turn-on delay time of 21 ns with rise time of 25 ns; its turn-off delay time is 65 ns with a fall time of 20 ns.
An increased range of resistances is available in bare-die and TO-247 4L packages with the following options:
- 16 mΩ: GP3T016A120X / GP3T016A120H
- 20 mΩ: GP3T020A120X / GP3T020A120H
- 40 mΩ: GP3T040A120X / GP3T040A120H
- 80 mΩ: GP3T080A120X / GP3T040A120H
Both the 16 mΩ (AS3T016A120X / AS3T016A120H) and 40 mΩ (AS3T040A120X / AS3T040A120H) options have been qualified for Automotive Applications Product Validation according to AEC-Q101.
The SemiQ QSiC 1200V will be on display at the Georgia World Congress Center in Atlanta, from March 16 to 20, 2025. Visitors to SemiQ’s booth #1348 will have the opportunity to explore the new third-generation MOSFETs.
Original – SemiQ
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Cambridge GaN Devices (CGD) has announced that Henryk Dabrowski, appointed as SVP of Global Sales at the innovative GaN IC company last year, will lead CGD’s global sales strategy, building on the successes to date, by expanding into additional markets exploiting the significant advantages that ICeGaN® offers. As part of that expansion, CGD is growing its sales organisation and will be hiring regional sales managers for both EMEA and North America, who will report to Dabrowski.
HENRYK DABROWSKI | SVP OF GLOBAL SALES, CGD
“GaN is now generally acknowledged to be a disruptive power semiconductor technology with an established growth trajectory, enabling high efficiency, high power density and miniaturisation. It is a perfect opportunity for CGD, which has demonstrated the ruggedness, reliability and ease of use of its ICeGaN® GaN IC technology. I am, therefore, delighted to be leading the sales focus as we scale up with major global customers in applications including servers, data centres, inverters, industrial power supplies and, in the near future, automotive EV applications.”GIORGIA LONGOBARDI | CEO & CO-FOUNDER, CGD
“I am thrilled to have Henryk onboard. His extensive industry expertise, strategic vision and proven success will enable CGD’s rapid expansion into new markets world-wide. As the demand for power significantly increases due to AI and the electrification of vehicles, I am confident that Henryk’s expertise will be key to accelerating commercial adoption of CGD’s effortless and energy-efficient ICeGaN® GaN ICs.”Dabrowski has over 30 years’ experience in technology design, commerce and sales leadership. Most recently, he built and led sales and applications teams for Vicor in EMEA. A Chartered Engineer (CEng) with the Institute of Engineering and Technology (IET), Dabrowski previously held commercial roles at Texas Instruments and Infineon, and also has experience within the distribution sales channel.
Original – Cambridge GaN Devices
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Navitas Semiconductor’s 8.5kW power supply unit (PSU), powered by GaNFast™ and GeneSiC™ technologies, has been recognized for its innovative design. Tailored for AI and hyperscale data centers, the PSU achieves 98% efficiency while meeting Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications.
The design minimizes ripple current, EMI, and device count by 25%, reducing costs. Its 3-phase LLC topology utilizes GaNSafe™ technology with integrated control, drive, sensing, and protection, along with Gen-3 Fast SiC MOSFETs for enhanced performance and reliability.
Original – Navitas Semiconductor
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SUMCO Corporation announced plans to transfer wafer production from the Miyazaki Plant of consolidated subsidiary SUMCO TECHXIV Corporation to other manufacturing facilities, with the aim of improving profitability by reorganizing the production of silicon wafers of 200 mm and smaller.
The current silicon wafer market environment is in a prolonged sluggish demand phase, due to such factors as the drop-off from extraordinary demand during the COVID-19 pandemic, and structural changes in the semiconductor supply chain occasioned by US-China friction.
Drawdown of 300 mm wafer inventories by customers is taking time, as semiconductor production adjustments continue; but overall demand is expected to recover gradually thanks to strong needs for leadingedge products for AI semiconductors and high-performance memory. Demand remains sluggish, however, for small-diameter wafers mainly for consumer, industrial, and automotive uses. Wafers of 150 mm and smaller, in particular, are expected to see falling demand, with customers shifting to 200 mm wafers or lowering their production capacity as manufacturing equipment reaches its end of life.
In this market environment, the SUMCO Group has decided to reorganize the Miyazaki Plant to improve efficiency through consolidation of the production capacity of small wafers. The Miyazaki Plant will become a factory solely for monocrystalline production, while wafer production will be transferred to other domestic plants in the SUMCO Group and to Indonesia, ending wafer production in Miyazaki by the end of 2026.
SUMCO intends to reassign employees affected by the reorganization to 300 mm wafer operations after the end of wafer production in Miyazaki. With this reorganization, expenses for business structural reforms have been posted for fiscal 2024 as extraordinary losses totaling 5.8 billion yen, consisting of an impairment loss on non-current assets of 4.6 billion yen and an inventory write-down, etc., of 1.2 billion yen.
The SUMCO Group is committed to ongoing efficiency-raising initiatives, including reorganization of production facilities. Moreover, with the accelerating pace of innovation in semiconductor technology, in addition to strategically making use of advanced manufacturing equipment currently under preparation for operation, we will focus management resources on modernizing equipment in existing 300 mm plants and boost our capacity for supplying leading-edge products for AI with their remarkable growth, as we strive to further raise our corporate value.
Original – SUMCO
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onsemi announced its fourth quarter and fiscal year 2024 results with the following highlights:
- Fourth quarter revenue of $1,722.5 million
- Fourth quarter GAAP gross margin and non-GAAP gross margin of 45.2% and 45.3%, respectively
- Fourth quarter GAAP operating margin and non-GAAP operating margin of 23.7% and 26.7%, respectively
- Fourth quarter GAAP diluted earnings per share of $0.88 and non-GAAP diluted earnings per share of $0.95, respectively
- Full year 2024 free cash flow of $1.2 billion, a 3X increase year-over-year
“As we continue to navigate this market downturn, our actions over the last four years have proven we are a structurally different company that is well-equipped to navigate prolonged volatility,” said Hassane El-Khoury, president and CEO, onsemi. “While 2025 remains uncertain, we remain committed to our long-term strategy. We will maintain our financial discipline, streamline our operations and continue to deliver high-value, differentiated intelligent power and sensing solutions that position onsemi to emerge even stronger.”
Original – onsemi
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Power Integrations announced financial results for the quarter and year ended December 31, 2024. Net revenues for the fourth quarter were $105.2 million, down nine percent from the prior quarter and up 18 percent from the fourth quarter of 2023. GAAP net income for the fourth quarter was $9.1 million or $0.16 per diluted share compared to $0.25 per diluted share in the prior quarter and $0.25 per diluted share in the fourth quarter of 2023. Cash flow from operations for the fourth quarter was $14.7 million.
In addition to its GAAP results, the company provided non-GAAP measures that exclude stock-based compensation, amortization of acquisition-related intangible assets and the related tax effects. Non-GAAP net income for the fourth quarter of 2024 was $17.2 million or $0.30 per diluted share compared to $0.40 per diluted share in the prior quarter and $0.22 per diluted share in the fourth quarter of 2023. A reconciliation of GAAP to non-GAAP financial results is included with the tables accompanying this press release.
For the full year, net revenues were $419.0 million, compared to $444.5 million in the prior year. Full-year GAAP net income was $32.2 million or $0.56 per diluted share, compared to $0.97 per diluted share in the prior year. Non-GAAP net income was $1.16 per diluted share, compared to $1.29 per diluted share in the prior year. Cash flow from operations for the full year was $81.2 million.
Commented Balu Balakrishnan, chairman and CEO of Power Integrations: “Fourth-quarter revenues were up 18 percent year-over-year, and we expect another double-digit increase in the first quarter. While the demand outlook is cloudy, especially in light of uncertainty around trade policy, we expect growth in a variety of end-markets in 2025, including renewable energy, high-voltage DC transmission, metering, automotive, appliances and more. Products featuring our proprietary PowiGaN™ technology should contribute significant growth this year as adoption accelerates across a broad set of high-voltage power-conversion applications.”
Additional Highlights
- Power Integrations paid a dividend of $0.21 per share on December 31, 2024. A dividend of $0.21 per share will be paid on March 31, 2025, to stockholders of record as of February 28, 2025.
- The company utilized $1.9 million for share repurchases during the fourth quarter, leaving $48.1 million remaining on its repurchase authorization as of December 31.
Financial Outlook
The company issued the following forecast for the first quarter of 2025:
- Revenues are expected to be flat compared to the fourth quarter of 2024, plus or minus five percent.
- GAAP gross margin is expected to be between 55 percent and 55.5 percent, and non-GAAP gross margin is expected to be between 55.5 percent and 56 percent. The difference between GAAP and non-GAAP is primarily attributable to stock-based compensation, with a smaller impact from amortization of acquisition-related intangible assets.
- GAAP operating expenses are expected to be approximately $54 million; non-GAAP operating expenses are expected to be approximately $45 million. Non-GAAP operating expenses are expected to exclude approximately $9 million of stock-based compensation.
Original – Power Integrations
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MCC Semi announced four new components in advanced P-channel MOSFET lineup. Supporting -100V applications from battery protection to motor drives and high-side switches, MCAC085P10, MCAC055P10, MCU055P10, and MCU085P10 are made for reliability in challenging environments.
With a maximum on-resistance of 55mΩ or 85mΩ, these MOSFETs improve overall system efficiency while reducing power dissipation. Leveraging trench technology and superior thermal performance, these versatile solutions provide engineers with high power density in a compact DFN5060 or DPAK package.
New P-channel MOSFETs are the obvious choice for unmatched performance and effective power management.
Features & Benefits:
- Trench MOSFET Technology: Enhances current capacity and reduces on-resistance
- Low On-Resistance: A maximum RDS(on) of 55mΩ or 85mΩ minimizes power consumption and boosts efficiency
- Low Conduction Losses: Reduce heat generation while improving overall system operation
- Excellent Thermal Performance: Safeguards device from overheating during use in high-temp scenarios
- High Power Density: Available in compact DFN5060 and DPAK package options
Original – Micro Commercial Components
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Infineon Technologies AG successfully placed a corporate bond with a volume of €750 million under its EMTN (European Medium Term Notes) program. The issue was several times oversubscribed. The bond has an annual coupon of 2,875% and a term of five years.
“With this successful transaction, Infineon was able to refinance upcoming maturities at very favorable conditions,” says Matthias Wolff, Head of Corporate Finance at Infineon.
The bond is issued in partial debentures with a nominal value of EUR 100,000 each and was placed exclusively with qualified institutional investors. The proceeds will be used for general business financing and the refinancing of maturing debt. Infineon last placed a corporate bond with a volume of €500 million under its EMTN program in February 2024.
Original – Infineon Technologies
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Microchip Technology Incorporated reported results for the three months ended December 31, 2024.
- Net sales of $1.026 billion, down 11.8% sequentially and down 41.9% from the year ago quarter. Our updated guidance provided on December 2, 2024 was net sales of $1.025 billion.
- On a GAAP basis: gross profit of 54.7%; operating income of $30.9 million and 3.0% of net sales; net loss of $53.6 million; and loss of $0.10 per diluted share. Guidance provided on November 5, 2024 was for GAAP earnings (loss) per share of $(0.04) to $0.03 per diluted share.
- On a Non-GAAP basis: gross profit of 55.4%; operating income of $210.7 million and 20.5% of net sales; net income of $107.3 million; and EPS of $0.20 per diluted share. Updated guidance provided on December 2, 2024 was for Non-GAAP EPS of $0.25 per diluted share.
- Returned approximately $244.6 million to stockholders in the December quarter through dividends.
- Quarterly dividend declared for the March quarter of 45.5 cents per share, an increase of 1.1% from the year ago quarter.
Net sales for the third quarter of fiscal 2025 were $1.026 billion, down 41.9% from net sales of $1.766 billion in the prior year’s third fiscal quarter.
GAAP net loss for the third quarter of fiscal 2025 was $53.6 million, or $0.10 per diluted share, down from GAAP net income of $419.2 million, or $0.77 per diluted share, in the prior year’s third fiscal quarter. For the third quarters of fiscal 2025 and fiscal 2024, GAAP results were adversely impacted by amortization of acquired intangible assets associated with previous acquisitions.
Non-GAAP net income for the third quarter of fiscal 2025 was $107.3 million, or $0.20 per diluted share, down from non-GAAP net income of $592.7 million, or $1.08 per diluted share, in the prior year’s third fiscal quarter. For the third quarters of fiscal 2025 and fiscal 2024, non-GAAP results exclude the effect of share-based compensation, expenses related to our acquisition activities (including intangible asset amortization, severance, and other restructuring costs, and legal and other general and administrative expenses associated with acquisitions including legal fees and expenses for litigation and investigations related to Microsemi acquisition), professional services associated with certain legal matters, and losses on the settlement of debt.
For the third quarters of fiscal 2025 and fiscal 2024, our non-GAAP income tax expense is presented based on projected cash taxes for the applicable fiscal year, excluding transition tax payments under the Tax Cuts and Jobs Act. A reconciliation of our non-GAAP and GAAP results is included in this press release.
Microchip announced that its Board of Directors declared a quarterly cash dividend on its common stock of 45.5 cents per share, up 1.1% from the year ago quarter. The quarterly dividend is payable on March 7, 2025 to stockholders of record on February 24, 2025.
“Our December quarter performance reflects the need for the decisive steps we are taking to realign our business, as revenue declined to $1.026 billion and inventory levels reached 266 days,” said Steve Sanghi, Microchip’s CEO and President. “Since returning as CEO in November, we have already initiated several key actions, including restructuring our manufacturing footprint, adjusting our channel strategy and intensifying our customer engagement. Our initial assessment indicates clear areas for operational enhancement, and we are taking a methodical yet urgent approach to evaluating all aspects of our business and implementing necessary changes to strengthen our competitive position.”
Eric Bjornholt, Microchip’s Chief Financial Officer, said, “We are executing on multiple operational initiatives to enhance our financial performance. Our focus remains on returning to premium profitability levels that have historically differentiated Microchip, supported by our diversified business model. While navigating the current cycle, we continue to focus on inventory management while maintaining our commitment to shareholder returns.”
Rich Simoncic, Microchip’s Chief Operating Officer, said, “Our comprehensive technology platform is driving innovation across critical markets, with our new RISC-V processors and expanded connectivity solutions demonstrating strong momentum in industrial, automotive, and aerospace applications. By delivering advanced AI capabilities, enhanced networking, and robust security technologies, we believe we are well-positioned to meet the evolving needs of our customers in increasingly complex technological environments.”
Mr. Sanghi concluded, “While we have seen substantial inventory destocking at our customers and channel partners, we believe the correction cycle is still not completed. Our March quarter bookings are running at a higher rate than December, though overall levels remain low. With net sales guidance of $920.0 million to $1.000 billion for our March quarter, we maintain a cautious but focused approach and look forward to providing a comprehensive update during our business update call on March 3, 2025.”
Original – Microchip Technology
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Power Integrations announced that Gregg Lowe will join the company’s board of directors on February 15, 2025.
From 2017 until 2024 Mr. Lowe was CEO of Wolfspeed, Inc., where he led the company’s transition to a pure-play manufacturer of silicon-carbide solutions for high-power applications. Previously, he was CEO of Freescale Semiconductor from 2012 until its 2015 merger with NXP Semiconductors. Earlier, he had a 27-year career at Texas Instruments, serving in a succession of leadership roles across field sales, automotive sales, marketing, and integrated circuits, culminating in the role of senior vice president and manager of the company’s analog business, where he helped direct the acquisition of National Semiconductor.
Mr. Lowe currently serves on the boards of Silicon Labs and North Carolina A&T University, and is chairman of the board of the Rock and Roll Hall of Fame Museum. He holds a Bachelor of Science degree in electrical engineering from the Rose-Hulman Institute of Technology and has completed the Stanford Executive Program at Stanford University.
Commented Balu Balakrishnan, chairman and CEO of Power Integrations: “We are delighted to welcome Gregg Lowe to our board. Gregg is an ideal fit thanks to his decades of experience in analog and power semiconductors, particularly his expansive knowledge of the sales and distribution landscape and deep customer relationships in key end markets including automotive and industrial.”
Original – Power Integrations
