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SemiQ Inc has expanded its QSiC™ power modules portfolio with the introduction of a new series of 1200V silicon-carbide (SiC) power MOSFETs in half-bridge packages.
Engineered and tested to operate reliably in demanding environments, these new compact, high-performance modules enable high-power-density implementations while minimizing dynamic and static losses.
Featuring high breakdown voltage (>1400V), the new QSiC™ modules support high-temperature operation (Tj = 175°C) with low Rds(On) shift over the full temperature range. In addition, the modules exhibit industry-leading gate oxide stability and long gate oxide lifetime, avalanche unclamped inductive switching (UIS) ruggedness and long short-circuit withstand time.
With a solid foundation of high-performance ceramics, the new SiC modules are suitable for EV charging, on-board chargers (OBCs), DC-DC converters, E-compressors, fuel cell converters, medical power supplies, photovoltaic inverters, energy storage systems, solar and wind energy systems, data center power supplies, UPS/PFC circuits, Vienna rectifiers, and other automotive and industrial applications.
To ensure that each module has a stable gate threshold voltage and high-quality gate oxide, SemiQ’s modules undergo gate burn-in testing at the wafer level. Besides the burn-in test, which helps to stabilize the extrinsic failure rate, stress tests such as gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB) allow achieving the required automotive and industrial grade quality levels. The devices also have extended short-circuit ratings. All modules have undergone testing exceeding 1350V.
Dr. Timothy Han, President at SemiQ, said, “SemiQ’s commitment to reliability and testing sets us apart in the semiconductor industry. Our high-performance QSiC™ 1200V MOSFET modules are proven to withstand challenging conditions, enabling engineers to develop reliable systems for the renewable, automotive, medical, and industrial sectors.”
SemiQ’s new 1200V 5mΩ, 10mΩ, and 20mΩ SiC MOSFET are available in industry standard half-bridge packages.
Part Number Circuit Configuration Ratings Typ. RdsOn [mΩ] GCMX010A120B2B1P Half-bridge 1200V/214A, B2 9 GCMX020A120B2B1P Half-bridge 1200V/102A, B2 19 GCMX005A120B3B1P Half-bridge 1200V/383A, B3 4.4 GCMX010A120B3B1P Half-bridge 1200V/173A, B3 9 Original – SemiQ
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Power Integrations announced a new family of plug-and-play gate drivers for 62 mm silicon-carbide (SiC) MOSFET and silicon IGBT modules rated up to 1700 V, with enhanced protection features to ensure safe, reliable operation.
SCALE™-2 2SP0230T2x0 dual-channel gate drivers deploy short-circuit protection in less than two microseconds, protecting the compact SiC MOSFETs against damaging over-currents. The new drivers also include advanced active clamping (AAC) to protect the switches against over-voltage during turn-off, enabling higher DC link operating voltages.
Thorsten Schmidt, product marketing manager at Power Integrations, commented: “The 2SP0230T2x0 gate drivers are flexible; the same hardware can be used to drive either SiC MOSFET or IGBT modules. This reduces both system design and sourcing challenges, and the plug-and-play approach speeds development.”
Ideal for applications such as railway auxiliary converters, offboard EV chargers and STATic synchronous COMpensator (STATCOM) voltage regulators for the power grid, 2SP0230T2x0 gate drivers are based on Power Integrations’ proven SCALE-2 technology, resulting in higher levels of integration, smaller size, more functionality and enhanced system reliability.
Power Integrations’ compact 134 x 62 mm 2SP0230T2x0 provides reinforced isolation at 1700 V, enabling use for up to 1700 V operation; this is 500 V higher than conventional drivers, which are typically limited to 1200 V.
Original – Power Integrations
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Alpha and Omega Semiconductor Limited (AOS) announced the release of its state-of-the-art automotive TO-Leadless (TOLL) package for the company’s automotive grade 80V and 100V MOSFETs. AOS’s TOLL package is developed to optimize the company’s power semiconductors as essential components in the evolution of e-mobility such as 2- and 3-wheel and other light vehicles. This new package helps designers meet the ongoing trend to electrify vehicles with the latest battery technology to meet clean energy zero-emission goals.
These capabilities make AOS 80V and 100V MOSFETs ideally suited for automotive BLDC motor and battery management applications for e-mobility. The AOS automotive TOLL package is designed to achieve the highest current capability using AOS’s innovative approach which utilizes advanced clip technology to achieve a high in-rush current rating.
In addition, AOS TOLL packaging with clip technology offers a very low package resistance and inductance, enabling improved EMI performance compared to other TOLL packages utilizing standard wire-bonding technology. With the combination of low ohmic and high current capability, utilizing AOS TOLL packaging also allows designers to reduce the number of parallel MOSFETs in high current applications. This, in turn, helps to enable higher power density requirements without compromising reliability in applications where robustness and reliability are key design objectives.
Providing a more compact solution for space-constrained designs, the AOTL66810Q (80V) and AOTL66912Q (100V) have a 30 percent smaller footprint compared to a TO-263 (D2PAK) package. These new devices in TOLL packaging are qualified to AEC-Q101, PPAP capable, and are manufactured in IATF 16949 certified facilities making them ideally suited for demanding application requirements in e-mobility. AOS TOLL devices are also compatible with automated optical inspection (AOI) manufacturing requirements.
“Using the AOS Automotive TOLL package with clip technology offers significant performance improvements in a robust package. The advanced technologies in our AOTL66810Q and AOTL66912Q MOSFETs will help simplify new designs allowing them to reduce the number of devices in parallel while providing the necessary higher current capability to enable overall system cost savings,” said Peter H. Wilson, Marketing Sr. Director of MOSFET product line at AOS.
Part Number VDS (V) VGS (±V) Continuous Drain Current (A) Pulsed Drain Current (A) RDS(ON) Max (mOhms) @10V @25°C @100°C @25°C AOTL66810Q 80 20 445 247 1780 1.25 AOTL66912Q 100 20 370 269 1480 1.7 Original – Alpha and Omega Semiconductor
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Toshiba Electronic Devices & Storage Corporation has launched two bipolar transistors “TTA2097 and TTC5886A” (with SC-63 package: Toshiba’s nickname is New PW-Mold), suitable for gate drive circuits in power devices, current switches in consumer equipment and industrial equipment, and LED drive circuits. The collector-emitter voltage rating and collector current (DC) rating of TTA2097 is -50 V/-5 A and that of TTC5886A is 50 V/5 A.
The new products TTA2097 and TTC5886A use small surface-mount type SC-63 package. Compared with Toshiba’s existing products with the same package, the new products have changed the wire material from gold to copper while the ratings and electrical characteristics are equivalent. This contributes to the reduction of environmental impacts. It is also easy to replace Toshiba’s existing products.
Toshiba will continue to expand its lineup of products that help reduce environmental impact.
Applications
Consumer equipment and industrial equipment
- Gate drive circuits for power devices
- Current switches
- LED drive circuits, etc.
Features
- Use of copper wire materials to reduce environmental impact
- Large collector current (DC) rating:
IC=-5 A (TTA2097)
IC=5 A (TTC5886A) - Small surface-mount type SC-63 package:
6.5 mm × 9.5 mm (typ.), t=2.3 ｍｍ (typ.)
Original – Toshiba
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DISCO Corporation has newly developed the following dicing blades: ZHSR Series, TM22 Series, and BH23 Series, and the following dry polishing wheel: DPEG Series SZ Type for the semiconductor and electronic components market. These products are being exhibited at SEMICON Japan 2023 (December 13–15, Tokyo Big Site).
ZHSR Series: Hub Blade for Silicon Wafer Dicing
With the recent progress in miniaturization within the semiconductor manufacturing process (e.g., logic memory), thorough countermeasures against static electricity are required. Highly pure water is used as a coolant and for cleaning during the wafer dicing process, but since highly pure water is nonconductive, a common countermeasure is to dissolve CO2 to provide conductivity. However, if the concentration of CO2 in the highly pure water is increased to suppress the amount of static electricity, corrosion will occur in electroformed blades.The ZHSR Series has achieved improved corrosion resistance while maintaining high processing quality.
Features:
- Newly developed bond material
- Significantly improved corrosion resistance
- Improves yield by reducing wavy cutting and breakage due to blade tapering
- Promotes self sharpening and achieves high-quality processing
TM22 Series: High-Rigidity Metal Bond Blade
For passive components, such as condensers, die shape and volume after dicing affect product performance. Therefore, high dimensional accuracy is required from processing. As a successor to the TM11 Series, the TM22 Series can achieve high-precision processing with its increased bond strength and can contribute to improved productivity.
Features:
- Newly developed bond with increased strength
- Improves die dimensional accuracy after processing
- Improves yield by reducing wavy cutting and breakage due to blade tapering
BH23 Series: Metal/Resin Bond Blade Compatible with ABC (Automatic Blade Changer)
ABC is a function that automatically replaces hub blades during silicon wafer dicing. This function is recognized for its contributions in preventing operator error and improving operation rate. This automation is currently also in demand for metal/resin bond blades used to dice electronic components and packaging. With an aluminum hub bonded to its metal/resin blades, the BH23 Series is compatible with ABC, thus promoting automation.
Features:
- Supports metal, resin, and other bonds
- Individual blade information engraved to hub as 2D code
- Automatically sends actual measurement values for blade exposure and thickness to equipment
- Prevents human error such as blade mounting errors and/or value input errors
- Automatically records serial number of blades used, ensuring traceability
- Reduces downtime caused by wait for operator to start operation
- Improves equipment operation rate
DPEG Series SZ Type: Gettering DP Wheel for Silicon Wafers
In order to increase the strength of the wafer in silicon wafer thinning, undulations on the grinding surface need to be removed. However, if undulations are completely removed, the gettering effect is lost, leading to wafer property errors due to heavy metal contamination. The DPEG Series SZ Type has been newly added to the gettering DP wheel lineup for solving this issue. The DPEG Series SZ Type can achieve higher die strength than the conventional product while maintaining the gettering effect.
Features:
- Improved pad composition
- Improves die strength by approx. 1.3 times while maintaining gettering effect (when compared with conventional product)
Original – DISCO
- Newly developed bond material
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DISCO Corporation has developed DAG811, which has improved usability and a space-saving footprint, as the successor to DAG810, an automatic grinder that has responded to a wide range of needs and has been well received for many years. This equipment is being exhibited at SEMICON Japan 2023 (December 13-15, Tokyo Big Site).
Since its release in 2002, DAG810 has been used for R&D and semi-mass production in a wide range of fields such as semiconductors, electronic components, and optical components. In response to the increasing demand related to applications, DAG811 was developed upon renewing the equipment specifications such as improving the operability and making it compact.
By optimizing the processing point, this equipment also meets the grinding needs of compound semiconductors such as SiC and GaN used in power devices, for which demands are increasing.
Features
Improved Usability
- Easier wheel replacement with an optimized internal layout
- Enlarged monitor size from 10.4 inches (existing model) to 15 inches
・A new GUI (Graphical User Interface) has been adopted for improved operability
Space-saving Design
- Footprint reduced by over 12% compared to the existing model
・With a footprint of approx. 0.9m², it is one of the world’s smallest 1 spindle, 1 chuck table grinders (compatible with Φ8-inch wafers)
Supports a Wide Range of Grinding Demands
- Supports two types of grinding methods, in-feed grinding and creep-feed grinding
Easy switching between the methods using the touch panel - Achieves good grinding results for compound semiconductors as well due to optimization of the processing point
Original – DISCO
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DISCO Corporation has developed DDS2020, a fully automatic die separator that supports Φ200 mm tape frames and achieves separation of hard materials including SiC and sapphire. This equipment is being exhibited at SEMICON Japan 2023 (December 13-15, Tokyo Big Site).
Stealth dicingTM is a dicing process where a modified layer is formed by focusing a laser beam inside the workpiece, following which stress is applied externally to separate it into die. As silicon wafers can be separated with a relatively small amount of stress, the die can be separated by simply expanding the dicing tape. On the other hand, materials that have high mechanical strength like SiC wafers that are widely used for power devices and sapphire wafers used for LED cannot be separated just by expansion. Thus, a breaking mechanism was necessary.
DDS2020 is a die separator that achieves separation of hard materials such as SiC and sapphire with a low load using a new breaking mechanism.
Features
- New breaking mechanism that achieves low load separation
- Load decreased by 40% compared to the conventional breaking mechanism
- Breaking load measurement and graph display
- Detects unseparated die and improves the yieldAutomatic retry setting when unseparated die are detected is also available
- Tape frame remounting for breaking is no longer necessary
- Eliminates remounting work and reduces tape costs
Original – DISCO
- New breaking mechanism that achieves low load separation
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Axcelis Technologies, Inc. announced shipment of multiple Purion H SiC Power Series™ and the Purion M SiC Power Series™ ion implanter systems to leading power device chipmakers in Europe and Asia, and the closure of an Purion H200 SiC Power Series™ evaluation tool in Europe. Shipments include both evaluation and revenue systems and will be used in high volume production of power devices supporting automotive industry electric vehicle (EV) applications.
President and CEO of Axcelis Technologies Russell Low commented, “The power device market continues to grow rapidly and is a major driver of our growth globally. We are pleased to continue to support our customers’ fab capacity expansion and also excited about the opportunity to support our new customers with our market leading Purion Power Series ion implanters.”
Axcelis is the only implant supplier in the industry to offer a comprehensive solution to our power device manufacturing customers. The Purion Power Series™ family is uniquely suited to excel at power device applications due to its innovative platform that offers the flexibility to handle multiple wafer sizes (150mm, 200mm and 300mm), various substrate types (SiC, Si IGBT, GaN, and GaAs wafers) at various implant temperatures (cold, room temperature, warm and hot).
This is accomplished while delivering the industry’s highest throughput and capital efficiency. The Purion Power Series™ covers the full ion implant market space with the Purion H Purion Power Series™ for high current applications, the Purion H200 Power Series™ for high current medium energy applications, Purion M Power Series™ for medium current applications and the Purion XE Power Series™ for high energy applications.
Original – Axcelis Technologies
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Nexperia announced that its GaN FET devices, featuring next-gen high-voltage GaN HEMT technology in proprietary copper-clip CCPAK surface mount packaging, are now available to designers of industrial and renewable energy applications.
Building on two decades of expertise in supplying high-volume, high-quality copper-clip SMD packaging, Nexperia is now proud to extend its revolutionary packaging approach to GaN cascode switches in CCPAK. The GAN039-650NTB, a 33 mΩ (typ.) Gallium Nitride (GaN) FET within the CCPAK1212i top-side cooling package, ushers in a new era of wide bandgap semiconductors and copper-clip packaging.
This technology offers advantages for renewable energy applications such as solar and residential heat pumps, further enhancing Nexperia’s commitment to developing the latest component technology for sustainable applications. It is also suited to a wide spectrum of industrial applications such as servo drives, switched-mode power supplies (SMPS), server, and telecom.
Nexperia’s CCPAK surface mount packaging uses Nexperia’s proven innovative copper-clip package technology to replace internal bond wires. This reduces parasitic losses, optimizes electrical and thermal performance, and improves device reliability. For maximum flexibility in designs, these CCPAK GaN FETs are available in top- or bottom-cooled configurations to further improve heat dissipation.
The cascode configuration of the GAN039-650NTB enables it to deliver superior switching and on-state performance, with a robust gate offering high margins against noise. This feature also simplifies application designs by eliminating the requirement for complex gate drivers and control circuitry, instead allowing them to be conveniently driven using standard silicon MOSFET drivers.
Nexperia’s GaN technology improves switching stability and helps to shrink die size by approximately 24%. In addition, device RDS(on) is reduced to only 33 mΩ (typ.) at 25°C, with a high threshold voltage and low diode forward voltage.
“Nexperia recognizes that designers of industrial and renewable energy equipment need a highly robust switching solution that can provide excellent thermal efficiency when performing power conversion.”, according to Carlos Castro, Vice President and General Manager of the GaN FET business at Nexperia. “This is why Nexperia decided to bring together the exceptional switching performance of its cascode GaN FETs with the exceptional thermal properties of its CCPAK packaging to offer customers a compelling solution.”
Nexperia begins its CCPAK portfolio release with the top-cooled 33 mΩ (typ.), 650 V GAN039-650NTB, and will follow shortly with the bottom-cooled variant, GAN039-650NBB of the same RDS(on). More information including datasheets and samples is available at www.nexperia.com/ccpak.
Original – Nexperia
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Infineon Technologies has once again been included in the Dow Jones Sustainability™ World Index, as announced by S&P Global last Friday in New York, USA.
“We are proud that Infineon has been chosen as one of the world’s most sustainable companies for the 14 th consecutive year“, said Elke Reichart, Member of the Board and Chief Digital Transformation Officer, responsible for Sustainability at Infineon. “Moreover, we feel strongly encouraged to keep up our efforts at making further progress towards our ambitious sustainability goals. Therefore, we are continuously developing our processes and drive innovation within the company and beyond. The green and the digital transformation go hand in hand.”
Infineon is well on track with the implementation of its CO 2-neutrality goal by 2030 (Scope 1 and 2). To date emissions have been reduced by 56.8 percent compared with the base year of 2019 while approximately doubling the business at the same time.
As a leading manufacturer of semiconductors for power electronic systems and the IoT, Infineon makes a significant contribution to decarbonization on the way to a net-zero society. Infineon’s products and solutions help to save 34 times more CO 2 emissions over the course of their usage than were created during their production.
This year, Infineon scored especially well in Privacy Protection and Innovation Management that includes aspects like Research & Development, Product Innovation and also Process Innovation, for instance through digitalization and the application of Industry 4.0 principles.
The Dow Jones Sustainability Index is regarded as one of the most important benchmarks for sustainability and lists the world’s leading companies from 61 industries. The assessment is based on the companies’ economic, environmental and social performance. Its objective is to help investors make informed decisions on how to align their portfolios more clearly with sustainability aspects, and to encourage companies to actively continue their efforts in this regard.
Original – Infineon Technologies
