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Bourns, Inc. announced it has selected Holder as an additional full line distributor in China. Holder was selected based on its extensive passive components experience along with its knowledgeable and large FAE organization that is known to supply superior technical support. These attributes give Bourns the essential backing to meet increasing demand for the company’s advanced vehicle, industrial and consumer electronic component solutions.
“As the leading passive component distributor in China, it made strategic sense for Bourns to initiate a sales channel relationship with Holder. Bourns has grown to be one of the Top 10 power conversion solution providers worldwide. Therefore, we believe this strategic alliance is poised to bring about a positive impact on meeting our customers’ growing need for Bourns’ product accessibility and availability in the Chinese market,” said James Harrington and Senior Vice President of Worldwide Sales at Bourns.
“The entire Holder organization is excited to take on the representation of Bourns’ advanced and innovative application solutions. With 29 offices throughout China along with an extensive FAE team, we are eager to help Bourns expand its Chinese customer base with the worldclass support electronics developers have come to expect from an industry leader such as Bourns,” said Leo Xie, Holder CEO.
Original – Bourns
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Infineon Technologies AG has finished its 24th Annual General Meeting. The entire event was held in a virtual format and broadcast publicly on the company web site. Shareholders had the opportunity to speak live during the event and ask questions.
Dividend of €0.35 per share
The Annual General Meeting followed the proposal of the Management Board and Supervisory Board on the distribution of profits and approved a dividend payment of €0.35 per share. The payout exceeds the dividend amount of the previous year by 3 Euro cents, or almost 10 percent.
Ute Wolf and Prof. Dr. Hermann Eul elected to the Supervisory Board
Ute Wolf was appointed to the Supervisory Board by court order from 22 April 2023 until the end of the 2024 Annual General Meeting. Her term of office as a shareholder representative on the Supervisory Board was extended by the Annual General Meeting. In addition, Dr. Manfred Puffer resigned from his position with effect from the end of the Annual General Meeting on 23 February 2024, meaning that his vacant position had to be filled. The Annual General Meeting elected Prof. Dr. Hermann Eul as a new member of the Supervisory Board.
Deloitte elected as new corporate auditor
The shareholders elected Deloitte GmbH, Munich, as auditor for the 2024 financial year. The tender process had been carried out as part of the legally required rotation.
Detailed information on the 2024 Infineon Technologies AG Annual General Meeting, including the voting results for the individual agenda items, is available at www.infineon.com/agm, together with the recorded speeches of the Chairman of the Supervisory Board, the Chief Executive Officer and the Chief Financial Officer.
Original – Infineon Technologies
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LATEST NEWS / PRODUCT & TECHNOLOGY / Si2 Min Read
Toshiba Electronic Devices & Storage Corporation has added DTMOSVI(HSD), power MOSFETs with high-speed diodes suitable for switching power supplies, including data centers and photovoltaic power conditioners, to its latest-generation DTMOSVI series with a super junction structure. Shipments of the first two products “TK042N65Z5” and “TK095N65Z5,” 650V N-channel power MOSFETs in TO-247 packages, start today.
The new products use high-speed diodes to improve the reverse recovery characteristics important for bridge circuit and inverter circuit applications. Against the standard DTMOSVI, they achieve a 65% reduction in reverse recovery time (trr), and an 88% reduction in reverse recovery charge (Qrr) (measurement conditions: -dIDR/dt= 100A/μs).
The DTMOSVI(HSD) process used in the new products improves on the reverse recovery characteristics of Toshiba’s DTMOSIV series with high-speed diodes (DTMOSIV(HSD)), and has a lower drain cut-off current at high temperatures. The figure of merit “drain-source On-resistance × gate-drain charges” is also lower. The high temperature drain cut-off current of TK042N65Z5 is approximately 90% lower, and the drain-source On-resistance × gate-drain charge 72% lower, than in Toshiba’s current TK62N60W5.
This advance will cut equipment power loss and help to improve efficiency. The TK042N65Z5 shows a maximum improvement in power supply efficiency over the current TK62N60W5 of about 0.4%, as measured in a 1.5kW LLC circuit.
A reference design, “1.6 kW Server Power Supply (Upgraded)”, that uses TK095N65Z5 is available on Toshiba’s website today. The company also offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available.
Toshiba plans to expand the DTMOSVI(HSD) line-up with the release of devices in TO-220 and TO-220SIS through-hole packages, and TOLL and DFN 8×8 surface-mount packages.
The company also will continue to expand its line-up of the DTMOSVI series beyond the already released 650V and 600V products and the new products with high-speed diodes. This will enhance switching power supply efficiency, contributing to energy-saving equipment.
Original – Toshiba
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SwissSEM received JD Energy 2023 Outstanding Contribution Award. The Outstanding Contribution Award harvested in 2023 is not only JD Energy’s affirmation of SwissSEM’s product performance and service quality, but also demonstrates its confidence in SwissSEM’s future development. SwissSEM will continue to strengthen exchanges and cooperation with customers, and strive to the international first-class level of domestic boutique power semiconductors, to help China’s new energy industry take off.
JD Energy is a company founded in 2018, relying on Xi’an Jiaotong University, jointly founded by industry-renowned power electronics technology experts and a group of senior engineers with more than 10 years of development experience. JD Energy is committed to technical research and product development of core equipment in advanced energy storage systems, contributing industry-leading solutions to promote large-scale clean energy access and achieve global carbon neutrality goals, which is a key partner of SwissSEM.
Since 2022, SwissSEM has been a supplier to JD Energy, supplying 1200V ED-type modules to it in bulk for use in the energy storage converter, and has achieved a high product share in 2023. According to JD Energy’s feedback, SwissSEM’s module products are of excellent quality, with outstanding consistency and reliability, thoughtful after-sales technical support services, quick response time, and are trustworthy and excellent suppliers.
The Outstanding Contribution Award harvested in 2023 is not only JD Energy’s affirmation of SwissSEM’s product performance and service quality, but also demonstrates its confidence in SwissSEM’s future development. SwissSEM will continue to strengthen exchanges and cooperation with customers, and strive to the international first-class level of domestic boutique power semiconductors, to help China’s new energy industry take off.
Original – SwissSEM
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GaN / LATEST NEWS / WBG2 Min Read
Navitas Semiconductor announced that its GaNFast™ power ICs drive Samsung’s 25 W “Super-Fast Charging” (SFC) for the new, AI-enhanced Galaxy S24 smartphone.
Flagship hardware specifications include a 2340 x 1080 (FHD+) dynamic AMOLED 2X, and 120 Hz screen, plus the Galaxy S24 delivers innovative and practical AI features to help transform the way users communicate, create and discover the world. Galaxy AI features like Live Translate, Chat Assist and new “Circle to Search” with Google, to improve nearly every experience that S24 users can enjoy.
The 25 W GaNFast unit delivers 50% charge to the high-capacity 4000 mAh battery in only 30 minutes, while the USB PD 3.0 (Type-C) specification makes it compatible with other Samsung products including Galaxy Buds2 audio, Galaxy Z Fold5, Galaxy Flip and Galaxy A23.
Designed with sustainability in mind, the 25 W power adapter features a 75% reduction in power consumption sleep mode. Navitas’ GaNFast technology is deployed in a high-frequency, quasi-resonant (HFQR) topology running at 150 kHz – 3x faster than standard silicon designs – and delivers a 30% size shrink vs. conventional charger designs.
“We are excited to extend our relationship with Samsung as they continue to develop groundbreaking mobile phone technology,” said David Carroll, Sr. VP Worldwide Sales for Navitas. “Deploying GaNFast ICs has allowed Samsung to create an ultra-compact, lightweight and efficient 25W adapter that can rapidly re-charge the new Galaxy S24 and a variety of other phones and accessories in the Samsung range.”
Original – Navitas Semiconductor
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Aehr Test Systems announced it has received new follow-on orders totaling $23 million from existing customers for FOXTM wafer level test and burn-in products to be used for production and engineering qualification needs for wafer level burn-in and screening of their silicon carbide devices. Customer-requested ship dates for these orders range from immediate shipment through the end of Aehr’s current fiscal year, which ends May 31, 2024.
The orders include a significant number of FOX WaferPakTM full wafer Contactors for both current design capacity increases as well as new device designs that are expected to drive additional orders in calendar year 2024 and beyond.
FOX WaferPak Contactors are used in conjunction with the company’s FOX-NP and FOX-XP wafer level test and burn-in systems to contact 100% of the die on a wafer up to several thousand devices at a time. These proprietary WaferPak designs are specific to a customer’s application as well as die layout and unique electrical contact pads. Aehr’s FOX systems and WaferPaks are currently being used on wafer sizes ranging from 4”, 6”, 8” and 12” wafers and can be configured for a wide range of device applications.
Gayn Erickson, President and CEO of Aehr Test Systems, commented, “We are excited to help our customers meet their new design and production capacity needs with our industry-leading lead times and capacity for wafer level stress tests, screening, stabilization, and burn-in. Our proprietary WaferPak Contactors are unique to each end customer’s device design and grow with the number of device designs and capacity needed for volume production of those devices. As we have stated in the past, we are able to quickly ship a large quantity of WaferPaks with very short lead times with our increased design resources, optimized supply chain, and manufacturing and test processes. We continue to believe our WaferPak business will grow in absolute revenue and also as a percent of the overall revenue for the company. In addition, we have increased our material availability and manufacturing capacity to shorten lead times on our FOX-NP and FOX-XP test and burn-in systems and automated FOX WaferPak Aligners.”
The FOX-XP and FOX-NP systems and proprietary WaferPaks are capable of functional test and burn-in/cycling of silicon carbide and gallium nitride power semiconductors, silicon photonics integrated circuits as well as other optical devices, 2D and 3D sensors, flash memories, magnetic sensors, microcontrollers, and other leading-edge ICs in either wafer form factor before they are assembled into single or multi-die stacked packages, or in singulated die or module form factor.
Original – Aehr Test Systems