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A cross-organizational team from Rigaku SE and Fraunhofer IISB has established a new semicon-ductor material characterization method in their jointly operated Center of Expertise for X-ray Topography in Erlangen, Germany. They succeeded not only in developing an industry-ready X-ray topography system, but also in employing defect detection and quantification algorithms, achieving a worldwide unique material characterization method for silicon carbide (SiC) wafers.
SiC is an excellent semiconductor for application areas like electric mobility and transportation, sustainable energy supply, industrial infrastructure up to sensors and quantum technologies even under harsh operating conditions.
As representatives for the whole research team, Dr. Kranert and Dr. Reimann from Fraunhofer IISB and Dr. Hippler, Managing Director Rigaku Europe SE, have won the Georg Waeber Innovation Award 2023 from the Förderkreis für die Mikroelektronik e.V. (Microelectronics Promotion Society).
Pioneering holistic material defect characterization with X-ray topography
In 2021, Rigaku SE and Fraunhofer IISB have founded the Center of Expertise for X-ray Topography, a joint lab that is located at the IISB’s headquarters in Erlangen, Germany. Here, the cross-organizational team has now developed a new metrology that is non-destructive, robust, reliable, high-throughput and therefore capable of swiftly detecting all relevant crystallographic defects in SiC substrates.
For the first time worldwirde, this innovation realized the holistic approach of setting up the measurement device, i.e., the X-ray topography (XRT) tool as well as formulating appropriate measurement and analysis routines that specifically meet the industry’s demands for speed, reliability, and accuracy. The development process was supported by rigorous scientific validation of the results, a crucial factor for the acceptance of a new approach in the industry.
Until now, no such industry-ready metrology existed for the early stages of SiC power electronics manufacturing, especially at substrate or crystal (commonly referred to as the “puck”) level. This breakthrough in SiC substrate inspection makes it no longer necessary to, e.g., destructively defect etch and discard semiconductor substrates for characterization, as is currently often the case. In consequence, the developed XRT metrology is superior to these existing substrate characterization methods employed in the industry, ultimately leading to substantial cost savings.
Effectively, this technology, developed in Germany, provides everything needed to become the industry standard for specifying and controlling substrate quality in production as well as for R&D substrate and device manufacturers worldwide. The success of this joint innovation is vividly illustrated by the new business, which Rigaku has successfully established in less than two years. Now, the Japan-based company is the world’s leading supplier of XRT tools for SiC substrate and device manufacturing.
The innovative metrology approach has been driven significantly by Dr. Michael Hippler, Managing Director of Rigaku Europe SE, and Dr. Christian Kranert with Dr. Christian Reimann, both group managers in the Fraunhofer IISB’s Materials department. Hence the scientists were selected for the Georg Waeber Innovation Award 2023 by the Förderkreis für die Mikroelektronik e.V. (Microelectronics Promotion Society).
The Förderkreis is an association of industry companies, two Fraunhofer institutes, four chairs of the University of Erlangen-Nuremberg and the Nuremberg Chamber of Commerce and Industry. The main objective is to foster a smooth exchange between science and industry, which is manifested in the Georg Waeber Innovation Award. The award is presented annually for outstanding scientific achievements and places a strong emphasis on the advancement of knowledge in microelectronics and its practical application in the industry. On October 25, 2023, Dr. Hippler, Dr. Reimann and Dr. Kranert received the award during a ceremony at Fraunhofer IISB in Erlangen.
Paving the way for the next generation of SiC power electronics
SiC semiconductor devices play a pivotal role in the power electronics industry. As a replacement for conventional silicon-based power electronics, SiC has the potential to enhance energy efficiency while reducing system costs. It is relevant across various application areas from electric mobility and transportation, sustainable energy supply, industrial infrastructure up to sensors and quantum technologies even under harsh operating conditions.
Consequently, processing low-cost, energy-efficient, and highly reliable SiC power devices is a critical endeavor with the worldwide electrification trend. The production capacities for SiC wafers experience significant growth, which goes hand in hand with an increasing demand for wafer inspection and metrology within the SiC industry. In particular, manufacturers of substrates and power devices require precice information regarding the quality of substrates in terms of crystallographic defects, their distribution across the entire wafer area, and absolute quantities.
Original – Fraunhofer IISB
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DENSO announced global financial results for its second quarter, ending September 30, 2023, for its 2024 fiscal year, ending March 31, 2024:
- Consolidated revenue totaled 3,513.5 billion yen (US$23.5 billion), a 16.3 percent increase from the previous year.
- Consolidated operating profit totaled 211.8 billion yen (US$1.4 billion), a 36.3 percent increase from the previous year.
- Consolidated profit attributable to owners of the parent company totaled 168.9 billion yen
(US$1.1billion), a 59.7 percent increase from the previous year.
“Revenue in the second quarter increased compared to the previous year due to the strong vehicle sales mainly in Japan and North America, foreign exchange gains and expansion of products for electrification, safety and peace of mind areas though decrease of Japanese, European, and American vehicle sales in China.
Operating profit in the second quarter increased compared to the previous year due to production volume, foreign exchange gains and improvement, though the continuing rise in the cost of materials, especially electronic components, and the accelerating investment for future as R&D.” said Yasushi Matsui, CFO, Vice President and member of the Board of Directors of DENSO CORPORATION.
“In this fiscal year, we forecast 7,000.0 billion yen (US$46.8 billion) in revenue and 630.0 billion yen (US$4.2 billion) in operating profit. Revenue and operating profit will be based on strong sales actuals in the first half and forecast of foreign exchange gains and sales expansions in the third quarter. The annual dividends for the end of the fiscal year will be 52 yen, a 2 yen increase from the previous announcement. This means 208 yen as pre-stock split conversion. We will continue to improve DOE levels over the long term and in a stable manner.”
In Japan, revenue increased to 2061.2 billion yen (US$13.8 billion), up 18.5% from the previous year, and operating profit was 85.2 billion yen (US$569.5 million), down 6.4% from the previous year.
In North America, revenue increased to 856.6 billion yen (US$5.7 billion), up 19.8% from the previous year, and operating profit was 14.2 billion yen (US$94.8 million) (Operating loss of 13.0 billion yen in the same quarter of the previous year).
In Europe, revenue increased to 372.8 billion yen (US$2.5 billion), up 15.8% from the previous year, and operating profit was 13.9 billion yen (US$92.8 million), up 285.0% from the previous year.
In Asia, revenue increased to 974.0 billion yen (US$6.5 billion), up 1.4% from the previous year and operating profit was 88.2 billion yen (US$589.6 million), up 30.9% from the previous year.
In other areas, revenue increased to 60.3 billion yen (US$0.4 billion), up 12.4% from the previous year, and operating profit was 11.5 billion yen (US$76.9 million), up 0.8% from the previous year.
Forecast for Fiscal Year Ending March 31, 2024
Full-Year Forecast Changes from Previous Forecast Revenue 7,000.0 billion yen
[US$46.8 billion]+300.0 billion yen
(+4.5 percent)Operating profit 630.0 billion yen
[US$4.2 billion]+30.0 billion yen
(+5.0 percent)Profit before profit taxes 684.0 billion yen
[US$4.6 billion]+30.0 billion yen
(+4.6 percent)Profit attributable to owners
of the parent company470.0 billion yen
[US$3.1 billion]+26.0 billion yen
(+5.9 percent)ROE 9.7% +0.4% Original – DENSO
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Power Integrations released the world’s highest-voltage, single-switch gallium-nitride (GaN) power supply IC, featuring a 1250-volt PowiGaN™ switch. InnoSwitch™3-EP 1250 V ICs are the newest members of Power Integrations’ InnoSwitch family of off-line CV/CC QR flyback switcher ICs, which feature synchronous rectification, FluxLink™ safety-isolated feedback and an array of switch options: 725 V silicon, 1700 V silicon carbide, and PowiGaN in 750 V, 900 V and now 1250 V varieties.
The switching losses for Power Integrations’ proprietary 1250 V PowiGaN technology are less than a third of that seen in equivalent silicon devices at the same voltage. This results in power conversion efficiency as high as 93 percent – enabling highly compact flyback power supplies that can deliver up to 85 W without a heatsink.
Radu Barsan, vice president of technology at Power Integrations, said: “Power Integrations continues to advance the state of the art in high-voltage GaN technology development and commercial deployment, rendering even the best high-voltage silicon MOSFETs obsolete along the way. We were first to market with high-volume shipments of GaN-based power-supply ICs in 2019, and earlier this year introduced a 900-volt version of our GaN-based InnoSwitch products.
Our ongoing development of higher voltage GaN technology, illustrated here by our new 1250 V devices, extends the efficiency benefits of GaN to an even wider range of applications, including many currently served by silicon-carbide technology.”
Designers using the new InnoSwitch3-EP 1250 V ICs can confidently specify an operating peak voltage of 1000 V, which allows for industry-standard 80 percent de-rating from the 1250 V absolute maximum. This provides significant headroom for industrial applications and is particularly valuable in challenging power grid environments where robustness is an essential defense against grid instability, surge and other power perturbations.
Original – Power Integrations
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Heikki Holmberg, Okmetic’s Senior Technology Development Manager, has been selected as Aalto University School of Electrical Engineering’s Alumnus of the Year 2023. Heikki graduated as a Master of Science (Technology) at the Electrical Department of the Helsinki University of Technology, the predecessor of Aalto University, in 2002. He defended his doctoral dissertation in 2008. The Alumnus of the Year award was presented to Heikki on Saturday 28.10.2023 at the Aalto Alumni Weekend seminar in Otaniemi.
Personnel, alumnus and students at Aalto University School of Electrical Engineering were able to propose the alumnus of the year during the spring and summer. The management team considered in their discussion Heikki’s great cooperation with the school and his role in bringing the semiconductor industry to the fore to be significant for the selection.
“Heikki Holmberg knows the importance of cooperation between companies and the university, and he has coordinated the cooperation with our school in the Semi-Summer 2023 program and in highlighting the semiconductor industry in general. His work in his field is a great example for our students who are choosing their own study and career paths’, says Jussi Ryynänen, Dean of the Aalto University School of Electrical Engineering.
Heikki’s interest in the semiconductor industry was sparked already in the early days of his studies, and at the latest after the Basics of Semiconductor Industry course, it was clear that his future would lie in the field. Heikki describes the field as interesting, international and cross-disciplinary. The field combines materials physics, electro physics and chemistry. “The semiconductor industry is the industry of the future.” Heikki sums up.
Heikki has networked with other companies operating in the semiconductor industry in Finland and is an active member of several cooperation forums. “It is important that we cooperate with different companies in Finland to develop and advance the semiconductor industry. In this way, we will also be stronger at EU level.
Okmetic has worked closely with Murata, Vaisala, Picosun and Kyocera for several years.” Heikki says. “Finland will need a significant number of new experts in the future, which is why cooperation with educational institutions is also important. The sector currently employs approximately 5,000 people in Finland, but the goal is to employ 20,000 people by 2032.” Heikki continues.
Heikki has also brought a lot of technological know-how and semiconductor industry experience to Okmetic. He himself says that his most significant achievements are projects related to the expansion of the patterning line and the development and launch of a new product (UF-RFSi™, Ultra Flat Radio Frequency Silicon Wafer), as well as the fact that most of the applications for EU support for various projects have received a positive decision.
“Heikki’s expertise and energy have enabled Okmetic to react effectively to big opportunities and the challenges they contain. For this, a big thank you to Heikki and warm congratulations on a significant achievement on behalf of the entire Okmetic,” says Atte Haapalinna, CTO of Okmetic.
Original – Okmetic
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Wolfspeed, Inc. announced its results for the first quarter of fiscal 2024.
Quarterly Financial Highlights (Continuing operations only. All comparisons are to the first quarter of fiscal 2023)
- Consolidated revenue of $197.4 million, compared to $189.4 million
◦ Mohawk Valley Fab contributed $4.0 million in revenue
- Device design-ins of $2.2 billion and quarterly record of over $1 billion in device design-wins
- GAAP gross margin of 12.5%, compared to 35.7%
- Non-GAAP gross margin of 15.6%, compared to 38.8%
◦ GAAP and non-GAAP gross margins for the first quarter of fiscal 2024 include the impact of $34.4 million of underutilization costs, representing approximately 1,740 basis points of gross margin.
“We kicked off our fiscal year with a strong quarter in both execution and market share. Not only have we continued to win in the marketplace, as evidenced by our third highest quarter of design-ins and a record quarter of design-wins, we have clear focus on the ramp of our Mohawk Valley Fab,” said Wolfspeed CEO, Gregg Lowe. “At Mohawk Valley, we have an outstanding operations team in place, Building 10 on our Durham campus is producing enough 200mm wafers ahead of the needs of Mohawk Valley, and we already have enough qualified product to satisfy our 20 percent utilization goals.”
Lowe continued, “We remain steadfast in our long-term vision for the future of this industry. The market opportunity for silicon carbide stands at $6 billion today, up from $400 million just five years ago. This further validates our strategy to invest now to capitalize on the immense opportunities at-hand, and the significant opportunity in the future.
We have amassed significant materials expertise over the decades, which combined with the capacity of our new materials factory in Siler City, will increase our wafer production by 10x when fully operational, and creates significant competitive advantages over our peers and new entrants. We will be better positioned to support our customers’ needs going forward and cater to a whole host of new applications for silicon carbide technology.
As the only pure-play silicon carbide company in the market today, we believe that we are best positioned to capitalize on a decades long tailwind that represents a $20 billion addressable market by 2030.”
As previously announced, on August 22, 2023, Wolfspeed entered into a definitive agreement to sell its RF product line to MACOM Technology Solutions Holdings, Inc. (MACOM) for approximately $75 million in cash, subject to a customary purchase price adjustment, and 711,528 shares of MACOM common stock, valued at $50 million based on the 30 trading day trailing average closing price for MACOM’s common stock through August 21, 2023. Wolfspeed expects to close the transaction by the end of calendar 2023.
Original – Wolfspeed
- Consolidated revenue of $197.4 million, compared to $189.4 million
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High surge currents have met their match in our 2200V rectifier, GP12022. This high-voltage standard recovery rectifier is designed for demanding industrial applications and harsh conditions.
With impressive features, including a forward current capability of 120A and a low forward voltage of 1.2V, this component maximizes efficiency in power conversion while minimizing energy losses.
MCC’s rectifier utilizes the compact yet powerful TO-264P package with a high creepage 2-pin design to ensure safety and reliability. Thermal performance and efficiency are built in, with the ability to easily be mounted on a heatsink for optimal heat dissipation and streamlined installation.
All these features add up to superior operation you can count on in harsh environments. But GP12022 is actually eco-friendly thanks to RoHS compliance, a lead-free finish, and halogen-free design.
Level up your high-voltage industrial designs with the MCC’s 2200V standard recovery rectifier.
Features & Benefits:
- High forward surge current capability excels in demanding conditions
- Low forward voltage minimizes energy losses
- High creepage 2-pin TO-264P package enhances safety
- Ideal for high-temp applications
- Easy mounting to heatsink for faster installation
- Excellent thermal properties
- Halogen-free with lead-free finish
- RoHS compliant
Original – Micro Commercial Components
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Magnachip Semiconductor Corporation announced that the Company released its 6th-generation 600V Super Junction Metal Oxide Semiconductor Field Effect Transistor (SJ MOSFET) enhanced with microfabrication technology.
This 6th-generation 600V SJ MOSFET (MMD60R175S6ZRH) was built on the 180nm microfabrication process and Magnachip’s latest design technology. This sophisticated technology improves upon the previous generation of SJ MOSFETs by narrowing the cell-pitches by 50% and lowering the RDS(on) (On resistance: the resistance value between the drain and the source of MOSFETs during on-state operation) by 42%. As a result, this product comes in the same Decawatt Package (DPAK), while offering the low RDS(on) of 175mΩ and outstanding power density.
Furthermore, the total gate charge is lowered by approximately 29% compared to the previous generation, resulting in reduced switching loss and enhanced power efficiency. The power efficiency is in fact one of the key features of this product, as it gives product designers flexibility with regards to various applications. In addition, a Zener diode is embedded between the gate and the source to strengthen the ruggedness and reliability of the MOSFET in an application and prevent it from sustaining damage caused by external surges or electrostatic discharges.
With its high efficiency, flexible design and reliability, this new 600V SJ MOSFET can be used in a wide range of applications, such as servers, OLED TVs and laptop fast chargers. Omdia, a global market research firm, estimates that worldwide server shipments will grow by 8% annually from 2023 to 2027, while global OLED TV shipments will increase 11% every year, reaching a total of 9.3 million units in 2027.
“Following the launch of this MOSFET, Magnachip plans to unveil additional 6th-generation SJ MOSFETs, including those with a fast recovery body diode, in 2024,” said YJ Kim, CEO of Magnachip. “Aligned with customer demand, our technical innovation will further strengthen our industry presence and global market penetration.”
Original – Magnachip Semiconductor
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onsemi announced results for the third quarter of 2023 with the following highlights:
- Revenue of $2,180.8 million; GAAP and non-GAAP gross margin of 47.3%
- GAAP operating margin and non-GAAP operating margin of 31.5% and 32.6%, respectively
- GAAP diluted earnings per share and non-GAAP diluted earnings per share of $1.29 and $1.39, respectively
- Record automotive revenue of $1.2 billion, and increased 33% year-over-year
- Record industrial revenue of $616 million, up slightly year-over-year
“Our disciplined approach and execution resulted in another solid quarter, demonstrating the resilience in our business amid market softness,” said Hassane El-Khoury, president and chief executive officer, onsemi.
“We continue to drive structural improvements and efficiencies, most notably in our silicon carbide operation, with the completed expansion of the world’s largest, state-of-the-art silicon carbide fab in South Korea for 150- and 200-millimeter wafers.”
Original – onsemi
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JCET Group announced its financial results for the third quarter of 2023. The financial report shows that in the third quarter, JCET achieved revenue of RMB 8.26 billion, an increase of 30.8% quarter-on-quarter, and net profit of RMB 0.48 billion, an increase of 24% quarter-on-quarter.
JCET has focused on key applications of advanced packaging this year, continuously enhancing its overall solution capabilities for application scenarios, optimizing production capacity layout, and further strengthening its leading position in the global IC packaging and test industry.
JCET has achieved innovative breakthroughs in markets such as automotive electronics, 5G communications, high-performance computing (HPC), and wide bandgap power devices. Seizing market opportunities driven by the acceleration of the electric vehicle market, JCET’s automotive electronics business has maintained rapid growth.
In the first three quarters of this year, the company’s automotive electronics revenue increased by 88% year-on-year. In the 5G communications-related market, JCET provided global customers with services in R&D and HVM, further solidifying its leading position in areas including Antenna in Package (AiP) modules, RF power amplifiers (PA), and radio frequency front end (RFFE) modules.
Leveraging high-density heterogeneous SiP technologies and advantageous global production layouts, JCET intensifies its efforts with customers in AI and HPC domains for advanced packaging solutions development and product introductions, accelerating market expansion in high-computation systems, power management, high-performance storage, and smart terminals.
In the power semiconductor market, the high-density integration solutions developed by JCET in collaboration with global customers on wide bandgap power devices are widely used in the automotive and industrial energy storage, with ongoing production capacity expansion.
JCET continues to enhance its technological innovation, with R&D investment of RMB 1.08 billion in the first three quarters of 2023, a year-on-year increase of 10.4%. The company continues to promote the construction of high-performance packaging production capacities and upgrade existing factories towards advanced packaging technologies. In addition, JCET improves lean production capabilities, strengthens inventory control and supply chain management, and ensures that the company’s operations remain highly efficient.
Q3 2023 Financial Highlights：
- Revenue was RMB 8.26 billion, an increase of 30.8% quarter-on-quarter
- Net profit was RMB 0.48 billion, an increase of 24% quarter-on-quarter
- Earnings per share was RMB 0.26
Q3 YTD 2023 Financial Highlights：
- Revenue was RMB 20.43 billion
- Net profit was RMB 0.97 billion
- Earnings per share was RMB 0.54
Original – JCET
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Transphorm, Inc. introduced the SuperGaN® TOLT FET. With an on-resistance of 72 milliohms, the TP65H070G4RS transistor is the industry’s first top-side cooled surface mount GaN device in the JEDEC-standard (MO-332) TOLT package. The TOLT package offers flexibility of thermal management to customers where system requirements do not allow for the more conventional surface mount devices with bottom-side cooling.
The thermal performance of the TOLT is similar to that of the widely used, thermally robust TO-247 through-hole packages and delivers the added benefit of highly efficient manufacturing processes enabled by SMD-based printed circuit board assembly (PCBA).
The TP65H070G4RS leverages Transphorm’s robust, high performance 650-volt normally-off d-mode GaN platform offering improved efficiency over silicon, silicon carbide, and other GaN offerings via lower gate charge, output capacitance, crossover loss, reverse recovery charge, and dynamic resistance.
The SuperGaN platform advantages combined with the TOLT’s better thermals and system assembly flexibility results in a high performance, high reliability GaN solution for customers seeking to bring to market power systems with higher power density and efficiency at an overall lower power system cost.
Transphorm is engaged with multiple global partners for high power GaN, including lead customers in server and storage power, a global leader in the energy/microinverter space, an innovative manufacturer of off-grid power solutions, and a leader in satellite communications.
“Surface mount devices such as the TOLL and the TOLT offer various benefits such as lower internal inductance as well as simpler board mounting during manufacturing. The TOLT adds to that more flexible overall thermal management with through-hole like thermal performance by using top-side cooling,” said Philip Zuk, SVP Business Development and Marketing, Transphorm.
“These devices are commonly found in mid to high power system applications for key market segments including high performance computing (Server, Telecom, AI Power), Renewables and Industrial, and Electric Vehicles, some of which our GaN technology already powers today. we’re very excited to enable our customers to realize additional system level benefits with TOLT SuperGaN solutions.”
Today’s product release comes on the heels of Transphorm’s recent introduction of its three new TOLL FETs. Addition of the TOLT expands the company’s product offerings yet again. Its availability highlights Transphorm’s commitment to supporting customer preferences by making its SuperGaN platform accessible in various packages across the widest power range.
Device Specifications
SuperGaN devices lead the market with unmatched:- Reliability at < 0.05 FIT
- Gate safety margin at ± 20 V
- Noise immunity at 4 V
- Temperature coefficient of resistance (TCR) at 20% lower than e-mode normally-off GaN
- Drive flexibility with standard off-the-shelf silicon drivers
The robust 650 V SuperGaN TOLT device is JEDEC qualified. Because the normally-off d-mode platform pairs the GaN HEMT with an integrated low voltage silicon MOSFET, the SuperGaN FETs are easy to drive with commonly used off-the-shelf gate drivers. They can be used in various hard- and soft-switching AC-to-DC, DC-to-DC, and DC-to-AC topologies to increase power density while reducing system size, weight, and overall cost.
Part Dimensions (mm) RDS(on) (mΩ) typ RDS(on) (mΩ) max Vth (V) typ Id (25°C) (A) max TP65H070G4RS 10 x 15 72 85 4 29 Original – Transphorm
