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U.S. Senators Gary Peters (MI) and Debbie Stabenow (MI) announced Hemlock Semiconductor (HSC) will receive up to $325 million in federal funding to build a new, state-of-the-art manufacturing facility on its existing campus in Hemlock, Michigan. The new facility will allow the company to expand production of hyper-pure polysilicon needed to manufacture semiconductor chips, which are used to make a wide variety of products including vehicles, cell phones, washing machines, medical devices, agricultural equipment, solar panels, and defense technologies.
The funding comes from the CHIPS and Science Act, legislation Peters and Stabenow helped craft and pass into law to boost U.S. production of semiconductor chips, create American jobs, and strengthen U.S. national security by lessening our dependence on foreign companies for these critical technologies. This investment is expected to create 180 good-paying manufacturing jobs, as well as thousands of construction jobs, in Michigan.
Hemlock Semiconductor (HSC) is the nation’s leading producer of hyper-pure polysilicon for the semiconductor and solar industries and one of only five companies in the world capable of producing the highest quality polysilicon for semiconductor chips.
“In Michigan, our workers know how to make things well and with precision. That’s why I’m thrilled to announce this major investment that is going to keep Michigan at the forefront of advanced manufacturing, nationally and globally, and create thousands of good-paying jobs in our state,” said Senator Peters. “As one of just five companies worldwide and the only company headquartered in the U.S. that produces hyper-pure polysilicon for semiconductors, Hemlock Semiconductor plays a critical role in both our economy and national security. I’m proud to have authored the provision in the CHIPS and Science Act that ensured HSC would be eligible for this grant and have since continued to advocate for HSC as they work to ramp up production here at home. This funding will be a catalyst to that effort.”
“Michigan knows all too well what happens when we are dependent on semiconductor chips made halfway around the world. That’s why, as part of the CHIPS and Science Act, I led the effort with Senator Peters and Representative Kildee to make sure semiconductor chips are manufacturing here in the United States and there is no better place to make them than Michigan. This important federal investment will boost Michigan manufacturing, fix our broken supply chains, lower costs, and bring jobs home,” said Senator Stabenow. “I applaud Hemlock Semiconductor’s leadership in semiconductor manufacturing and improving our supply chains.”
“HSC is proud to be a manufacturing powerhouse for two vital industries of the future—semiconductor and solar. Bolstered by the CHIPS Act, we are planning for a once-in-a-generation investment in advanced technologies to continue serving as a top polysilicon supplier to the leading-edge semiconductor market,” said HSC Chairman and CEO AB Ghosh. “Our customers want high quality and sustainably made polysilicon. This proposed investment demonstrates that the Biden-Harris Administration, Governor Whitmer and our Michigan congressional champions understand HSC’s unique ability to meet those demands and our crucial role in strengthening American interests. As the United States works to reshore critical supply chains, we hope to make additional investments.”
Peters and Stabenow have made strengthening American manufacturing and securing domestic supply chains a top priority. The CHIPS and Science Act includes a provision Peters and Stabenow authored to support the domestic production of mature semiconductor technologies and ensure that projects supporting critical manufacturing industries are given priority status, which would include the automotive sector. This is in addition to $50 billion already in the bill to incentivize U.S. production of all types of semiconductors – for a total of $52 billion.
The CHIPS and Science Act also included Peters’ bipartisan Investing in Domestic Semiconductor Manufacturing Act, which ensures federal incentives to boost domestic semiconductor manufacturing include U.S. suppliers that produce the materials and manufacturing equipment that enable semiconductor manufacturing – including HSC. This provision authored by Peters ensured HSC would be eligible for the grant funding announced today. The CHIPS and Science Act additionally authorized increased funding for the Manufacturing Extension Partnership (MEP) program, which has been a priority for Peters and Stabenow.
Last year, the Senate unanimously passed Peters’ bipartisan legislation to strengthen federal efforts to expand domestic manufacturing of semiconductor chips. Peters’ Securing Semiconductor Supply Chains Act would direct the U.S. Department of Commerce’s SelectUSA program, in collaboration with other federal agencies and state economic development organizations, to develop strategies that would attract investment in U.S. semiconductor manufacturers and supply chains.
Original – Hemlock Semiconductor
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MCC Semi announced the latest innovation in their MOSFET lineup. The 100V wide SOA MCTL2D0N10YHR with split-gate trench technology satisfies the design demands of high-performance applications with ease. Balancing efficiency and reliability in harsh conditions is no longer an issue, thanks to this N-channel power MOSFET’s wide safe operating area (SOA) and a host of efficient characteristics.
This SOA comparison highlights significant differences in drain current between two 100V MOSFETs, MCTL300N10YB and MCTL2D0N10YHR, at 10ms pulse. This MOSFET’s wide SOA enhances safety and performance while overcoming common challenges engineers face when designing for high-power applications. It also provides a host of features that add up to ultimate efficiency and reliability. With a gate charge and on-resistance of 2mΩ, this MOSFET also optimizes energy use at every angle, reducing operational costs.
Designed to withstand junction temperatures of up to 175⁰C, this component delivers unquestionable performance in environments where lesser components would fail. Excellent thermal management is also assured, thanks to the TOLL package engineered for superior heat dissipation, which mitigates thermal-related issues. MCC’s 100V MOSFET is the ideal solution for diverse applications, including telecommunications, computing, audio amplification, and motor controls.
Features & Benefits:
- Wide SOA: Ensures safe operation across a broad range of conditions.
- Split-gate Trench (SGT) Technology: Provides enhanced performance and efficiency.
- Low On-Resistance: Maximizes efficiency by minimizing power losses.
- Low Conduction Losses: Reduces heat generation during operation.
- Low Gate Charge: Maximizes efficiency by minimizing switching losses.
- Low Gate Charge: Maximizes efficiency by minimizing switching losses.
- Excellent Thermal Performance: TOLL package facilitates superior heat dissipation.
Original – Micro Commercial Components
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Vishay Intertechnology, Inc. introduced two new IGBT and MOSFET drivers in the compact, high isolation stretched SO-6 package. Delivering high peak output currents of 3 A and 4 A, respectively, the Vishay Semiconductors VOFD341A and VOFD343A offer high operating temperatures to +125 °C and low propagation delay of 200 ns maximum.
Consisting of an AlGaAs LED optically coupled to an integrated circuit with a power output stage, the optocouplers are intended for solar inverters and microinverters; AC and brushless DC industrial motor control inverters; and inverter stages for AC/DC conversion in UPS. The devices are ideally suited for directly driving IGBTs with ratings up to 1200 V / 100 A.
The high operating temperature of the VOFD341A and VOFD343A provides a higher temperature safety margin for more compact designs, while their high peak output current allows for faster switching by eliminating the need for an additional driver stage. The devices’ low propagation delay minimizes switching losses, while facilitating more precise PWM regulation.
The optocouplers’ high isolation package enables high working voltages up to 1.140 V, which allows for high voltage inverter stages, while still maintaining enough voltage safety margin. The RoHS-compliant devices offer high noise immunity of 50 kV/µs, which prevents fail functions in fast switching power stages.
Original – Vishay Intertechnology
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Toshiba Electronic Devices & Storage Corporation has expanded the lineup of 150V N-channel power MOSFETs with new six products that use the new generation process “U-MOSⅩ-H series.” Products in this series are suitable for the switching power supplies of industrial equipment such as data centers and communication base. The package of new products is a three-pin through hole type: TO-220 for “TK4R9E15Q5, TK7R2E15Q5 and TK9R6E15Q5” and TO-220SIS for “TK5R0A15Q5, TK7R4A15Q5 and TK9R7A15Q5.”
The new products use the U-MOSⅩ-H process to achieve low drain-source On-resistance. In particular, TK4R9E15Q5 features the excellent low drain-source On-resistance of 4.9mΩ (max). In addition, the new products uses high-speed diode (HSD) to improve reverse recovery characteristics, which are important for synchronous rectification applications, by reducing reverse recovery charge and faster reverse recovery time. Used in synchronous rectification applications, the new products reduce the power loss of switching power supplies and help improve efficiency.
The first product TPH9R00CQ5 which uses HSD, has approximately 74% less reverse recovery charge and approximately 44% faster reverse recovery time than Toshiba‘s existing product TPH9R00CQH, which does not use HSD. The U-MOSⅩ-H process using this HSD has applied to through hole type packages in addition to surface mount type packages.
The new products have reduced the drain source spike voltage generated between the drain and source when MOSFET is switching, helping to lower EMI in switching power supplies.
Toshiba will continue to promote the expansion of its power MOSFET lineup, which helps improve the efficiency of power supplies, thereby contributing to reducing the power consumption of equipment.
Applications
- Switching power supplies for communication equipment, etc. (high efficiency AC-DC converters, high efficiency DC-DC converters, etc.)
- Motor control equipment (motor drives, etc.)
Features
- Excellent low On-resistance:
TK4R9E15Q5 RDS(ON)=4.9mΩ (max) (VGS=10V) - Low reverse recovery charge:
TK9R6E15Q5 Qrr=32nC (typ.) (-dIDR/dt=100A/μs) - Fast reverse recovery time:
TK9R6E15Q5 trr=40ns (typ.) (-dIDR/dt=100A/μs)
Original – Toshiba
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Texas Instruments Incorporated reported third quarter revenue of $4.15 billion, net income of $1.36 billion and earnings per share of $1.47. Earnings per share included a 3-cent benefit for items that were not in the company’s original guidance.
Regarding the company’s performance and returns to shareholders, Haviv Ilan, TI’s president and CEO, made the following comments:
- “Revenue decreased 8% from the same quarter a year ago and increased 9% sequentially. Industrial continued to decline sequentially, while all other end markets grew.
- “Our cash flow from operations of $6.2 billion for the trailing 12 months again underscored the strength of our business model, the quality of our product portfolio and the benefit of 300mm production. Free cash flow for the same period was $1.5 billion.
- “Over the past 12 months we invested $3.7 billion in R&D and SG&A, invested $4.8 billion in capital expenditures and returned $5.2 billion to owners.
- “TI’s fourth quarter outlook is for revenue in the range of $3.70 billion to $4.00 billion and earnings per share between $1.07 and $1.29. We continue to expect our fourth quarter effective tax rate to be about 13%.”
Original – Texas Instruments
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Electric drives are becoming increasingly prevalent in the boat and ship sector. At METSTRADE, Bosch Engineering is unveiling a newly developed, high-performance electrification solution for electrical systems with voltages of up to 800 volts, which further extends the potential use cases of electric drives in maritime applications while also raising system efficiency.
“With the latest generation of our electric motor and inverter with silicon carbide power modules, we offer a complete system that allows not only recreational boats but also larger sailing yachts and working boats to be operated with an efficient, quiet, yet still very powerful electric drive,” states Philip Kurek, who is responsible for off-highway and maritime solutions at Bosch Engineering.
The new electric motor SMG 230 is designed for system voltages of 400 to 800 volts. In an ideal voltage and temperature range, it offers a continuous power output of up to 200 kilowatts and around 250 newton meters of torque. Thanks to the 800-volt technology, the power density has also been increased significantly. The SMG 230 delivers 80 kilowatts more power than a comparable 400-volt machine with identical weight or, with the same level of performance, boasts more compact dimensions and a much lower weight.
The inverter with silicon carbide semiconductors, which is also designed for electrical voltages of up to 800 volts, is characterized by its impressive efficiency of more than 99 percent. The silicon carbide semiconductors in the power modules enable faster switching operations, meaning that significantly less energy is lost in the form of heat.
Bosch’s complete kit for the electrification of boat drives comprises electronic control units, inverters, electric motors, and transmissions for both 400- and 800-volt applications. This gives shipyards and system integrators maximum flexibility when adapting the electrification strategy to the respective requirements and allows them to integrate the relevant components quickly and easily into their ships. The system components are based on modern automotive technology and combine high robustness with utmost reliability. With its comprehensive kit for the electrification of ship drives, Bosch is making a crucial contribution to the ongoing reduction of greenhouse gas and noise emissions.
Original – Bosch
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At this month’s IEEE Energy Conversion Congress and Expo (ECCE), Navitas Semiconductor introduced conference attendees to ‘IntelliWeave’ – an innovative patented new digital control technique for improving next generation AI data center power supply (PSU) efficiency.
In a world where ever-more energy is needed for the processing of artificial intelligence (AI) and cloud-based applications, minimizing power consumption has become a priority for data center architects and operators. Combining next-generation GaN and SiC semiconductors with new control technique strategies to power conversion plays a key role in achieving this goal.
IntelliWeave’s novel digital control enables highest system efficiencies with precision current sharing, ultra-fast dynamic response and minimal phase error. A patented dual-loop and dual-feed-forward interleaving control achieves absolute zero voltage switching (ZVS) across the full-load range to enable highest efficiencies.
The digital control for Critical Conduction Mode (CRM) interleaving Totem Pole Power Factor Control (PFC) enables 30% reduction in power losses compared to existing Continuous Conduction Mode (CCM) solutions. The digital control combined with high-power GaNSafe power ICs has been proven on a 500 kHz GaN-based interleaving 3.2 kW CrM PFC PSU operating at 99.3% peak efficiency including EMI filter loss.
Taking place in Phoenix, Arizona from October 20th to 24th, IEEE ECCE 2024 features both industry-driven and application-oriented technical sessions and brings together practicing engineers, researchers and other professionals for interactive and multidisciplinary discussions on the latest advances in various areas related to energy conversion.
On October 21st Tao Wei presented “Novel digital control for a GaN-based CrM interleaved TP PFC”.
Original – Navitas Semiconductor
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Wolfspeed, Inc. announced that Thomas Seifert and Woody Young have been nominated to Wolfspeed’s Board of Directors (the “Board”). Their nominations will be considered by shareholders at the 2024 Annual Meeting of Shareholders (the “2024 Annual Meeting”), scheduled for December 5, 2024.
Mr. Seifert has served as the Chief Financial Officer of Cloudflare, Inc., a leading internet security company, since June 2017. Prior to joining Cloudflare, Mr. Seifert held executive leadership positions at a number of technology and semiconductor companies, including serving as Chief Financial Officer of Symantec Corporation, Brightstar Corp., and Advanced Micro Devices Inc. Mr. Seifert currently serves as a member of the Board of Directors of First Derivatives plc, an ultra-high-performance analytics software company.
Mr. Young most recently served as the President and a member of the Board of Directors of Solidigm, a flash memory semiconductor company, from October 2022 until August 2023. Mr. Young has over 30 years of experience as an investment banker and is the former Chairman of Mergers and Acquisitions at Perella Weinberg Partners LP. He previously served as the Co-Head of Global Telecommunications, Media, and Technology at Lazard and in similar roles at Merrill Lynch and Lehman Brothers. Mr. Young currently serves as a member of the Board of Directors of Frontier Communications Parent, Inc. (Nasdaq: FYBR), a fiber internet provider.“We are delighted to nominate Thomas Seifert and Woody Young for election to the Wolfspeed Board of Directors,” said Thomas Werner, Chair of the Wolfspeed Board. Mr. Werner continued, “With yesterday’s CHIPS Act capital structure update, I believe the Company successfully took a key step towards funding the execution of its business plan. We believe Thomas and Woody will be valuable additions to the Board as we focus on executing that plan, driving operational execution improvement, and continuing our previously disclosed efforts to explore ways to enhance shareholder value and unlock Wolfspeed’s strategic value.”
Clyde R. Hosein and John B. Replogle, who have served on the Board since 2005 and 2014, respectively, are not standing for re-election and will retire from the Board following the expiration of their terms at the 2024 Annual Meeting. “On behalf of the Board, I want to thank Clyde and John for their dedication and exemplary service to Wolfspeed over many years,” said Mr. Werner.
Original – Wolfspeed
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Ideal Power Inc. announced the start of third-party automotive qualification and reliability testing of B-TRAN™ devices.
“This is a significant milestone in our commercialization roadmap as third-party automotive qualification and reliability testing of B-TRAN™ is now underway. Demonstration of compliance with automotive standards, the most stringent reliability standards for power semiconductor devices, is expected to accelerate the adoption of B-TRAN™ with large industrial customers as well as automotive OEMs and Tier 1 automotive suppliers,” said Dan Brdar, President and Chief Executive Officer of Ideal Power.
Ideal Power successfully performed a critical subset of reliability testing of packaged B-TRAN™ devices in its lab and at a third-party testing site to confirm readiness for third-party automotive qualification and reliability testing. This testing focused on the reliability of packaged B-TRAN™ devices in extreme environmental conditions and under high electrical and thermal stress as well as blocking voltage and shock testing.
All of the tested devices packaged by commercial packaging partner passed these tests indicating a robust B-TRAN™ packaging design. As a result, the Company engaged a third-party to commence full automotive qualification and reliability testing.
The automotive qualification and reliability testing includes a broader array of testing as required by automotive codes and standards utilizing specified parameters and a wide range of test conditions. The testing to achieve automotive qualification requires over a thousand packaged B-TRAN™ devices from multiple wafer runs.
The process includes tens of thousands of power cycles at various current levels, thermal cycling at extreme temperature and humidity levels, blocking voltage and shock and vibration testing, and visual inspection. These tests are designed to expose B-TRAN™ to conditions that are intended to accelerate failure mechanisms and demonstrate the long-term reliability of the devices. Successful completion of B-TRAN™ automotive qualification and reliability testing is expected in the first half of 2025.
Original – Ideal Power
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Affordability combined with high performance and efficiency is the key to making electric mobility accessible to a broader market. That’s why Infineon Technologies AG is introducing the HybridPACK™ Drive G2 Fusion, establishing a new power module standard for traction inverters in the e-mobility sector.
The HybridPACK Drive G2 Fusion is the first plug’n’play power module that implements a combination of Infineon’s silicon and silicon carbide (SiC) technologies. This cutting-edge solution provides an ideal balance between performance and cost efficiency, giving more choice in the optimization of inverters.
One of the main differences between silicon and SiC in power modules is that SiC has a higher thermal conductivity, breakdown voltage and switching speed, making it more efficient, but also more expensive than silicon-based power modules. With the new module, the SiC content per vehicle can be reduced, while maintaining vehicle performance and efficiency at a lower system cost. For example, system suppliers can realize nearly the system efficiency of a full SiC solution with only 30 percent SiC and 70 percent silicon area.
“Our new HybridPACK Drive G2 Fusion module underlines Infineon’s innovation leadership in the automotive semiconductor industry,” said Negar Soufi-Amlashi, Senior Vice President & General Manager High Voltage at Infineon’s Automotive division. “Addressing the demand for greater e-mobility range, this technological breakthrough smartly combines silicon carbide and silicon. Integrated in a well-introduced module package footprint it offers compelling cost-performance ratio over pure silicon carbide modules without adding system complexity for automotive system suppliers and vehicle manufacturers.”
HybridPACK Drive G2 Fusion expands Infineon’s HybridPACK Drive power module portfolio and can be quickly and easily integrated in vehicle components or modules without requiring complex adjustments or configurations. The HybridPACK Drive G2 Fusion module features up to 220 kW in the 750 V class. It ensures high reliability over the entire temperature range from -40 °C to +175 °C and improved thermal conductivity.
The unique properties of Infineon’s CoolSiC™ technology and its silicon IGBT EDT3 technology with very fast turn-on enable the use of a single gate driver or dual gate drivers. This allows easy re-design from full silicon or full SiC based inverters to a fusion inverter. Generally, Infineon’s holistic expertise in SiC MOSFET and silicon IGBT technology, power module packaging, gate drivers as well as sensors enables premium products with cost savings at system level. One example is the integration of Swoboda or XENSIV™ Hall sensors in the HybridPACK Drive package for more precise and efficient motor control.
Infineon will showcase the new HybridPACK Drive G2 Fusion at electronica 2024 in Munich from November 12 to 15 (hall C3, booth 502).
Original – Infineon Technologies
