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NoMIS Power has achieved its latest major milestone with an award from the U.S. Air Force Research Laboratory (AFRL) to develop rugged Silicon Carbide (SiC) power devices to support the electrical power systems of aircraft.
NoMIS Power will develop 1200 V SiC power semiconductor devices (PSDs) through the award. The focus will be on metal-oxide-semiconductor field-effect transistors (MOSFETs) with enhanced operational lifetime as well as improved on-state and off-state efficiency at operating temperatures, resulting in lower losses for power electronics engineers to manage.
Solid-state power controllers within aircraft electrical power distribution systems require low on-state losses to enable passive cooling, as well as surge current and voltage overshoot protection during system start-up and fault interrupt. The proposed 1200 V SiC MOSFETs from NoMIS Power will provide airframers and system builders/integrators with the necessary PSD chips capable of high efficiency, long short-circuit withstand time (SCWT), and operational ruggedness for nominal and transient conditions. Moreover, the 1200 V rating will not only support current-generation aircraft utilizing 270 VDC architecture, but also aircraft operating with a +/- 270 VDC (i.e. 540 VDC rail-to-rail) architecture, as well.
NoMIS Power overcomes the limitations of commercial-off-the-shelf (COTS) Si and SiC-based PSDs via a novel SiC device design that is achievable using disruptive manufacturing techniques. As a result, NoMIS SiC devices can withstand higher voltage spikes and current surges during harsh operating conditions, enabling longer power management product lifetime through superior reliability and ruggedness.
Announcing the new award, NoMIS Power CEO Dr. Adam Morgan said, “Our team is very excited to get the opportunity to support strategic groups working to improve the capabilities of our armed forces. We are confident this novel SiC device technology will also have a significant impact on other critical technology markets, such as electric vehicles and grid infrastructure. These efforts will directly support our company’s near-term product launch of next-generation SiC devices.”
Original – NoMIS Power
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Semiconductors are the linchpin to the performance, safety, and customer features of Stellantis vehicles today and in the new state-of-the-art, BEV-centric STLA vehicle and technology platforms arriving soon. As the auto industry’s demand for semiconductors accelerates, Stellantis is implementing a multifaceted strategy designed to manage and secure the long-term supply of vital microchips. Developed by a cross-functional team, the strategy was created through a rigorous assessment of customer desires for advanced technology features and a keen focus on delivering the objectives laid out in the Stellantis Dare Forward 2030 plan.
The robust strategy, which is refined continuously, includes:
- implementation of a semiconductor database to provide full transparency on the semiconductor content;
- systematic risk assessment to avoid and proactively remove legacy parts;
- long-term chip level demand forecasting to support capacity securitization agreements with chip makers and Silicon Foundries;
- implementation and enforcement of a Green List to reduce chip diversity and – in case of future chip shortages – to put Stellantis in control of the allocation; and,
- the purchasing of mission-critical parts at chip makers including a long-term securitization of chip supply.
Stellantis has started to engage with strategic semiconductor providers like Infineon, NXP® Semiconductors, onsemi, and Qualcomm to further improve its all-new, state-of-the-art STLA platforms and technologies. In addition, Stellantis is working with aiMotive and SiliconAuto to develop its own differentiating semiconductors in the future.
“An effective semiconductor strategy requires a deep understanding of semiconductors and the semiconductor industry,” said Maxime Picat, Chief Purchasing and Supply Chain Officer at Stellantis. “We have hundreds of very different semiconductors in our cars.
We have built a comprehensive ecosystem to mitigate the risk that one missing chip can stop our lines. At the same time, key vehicle capabilities directly depend on the innovation and performance of single devices. SiC MOSFETS extend the range of our electric vehicles while the computation performance of a leading-edge SoC is essential for the customer experience and safety.”
To date, Stellantis has entered into direct agreements for semiconductors with a purchasing value of more than €10 billion through 2030. The supply agreements cover a variety of vital microchips, including:
- Silicon Carbide (SiC) MOSFETS, which are fundamental to the range of EVs.
- Microcontroller Unit (MCU), a key part of the computing zones for the STLA Brain electrical architecture.
- System-on-a-chip (SoC), where performance is essential for the high-performance computing (HPC) units that deliver the in-vehicle infotainment and autonomous driving assist functions.
Semiconductors play key roles in the vehicles that are driving the Stellantis transformation into a sustainable mobility tech company, as outlined in Dare Forward 2030. This includes enabling features and functions in the BEV-native STLA global platforms (Small/Medium/Large/Frame) and the seamless connectivity, remote upgradability, and the flexible service-oriented electrical/electronic architecture that underpins the STLA Brain, STLA SmartCockpit, and STLA AutoDrive artificial intelligence-powered platforms.
Original – Stellantis
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onsemi and BorgWarner Inc. announced the two companies are expanding their strategic collaboration for silicon carbide (SiC), making the total agreement worth over $1 billion in lifetime value. BorgWarner plans to integrate onsemi EliteSiC 1200 V and 750 V power devices into its VIPER power modules. The EliteSiC devices join a broad portfolio of onsemi products that are part of the long-standing strategic relationship between the two companies.
onsemi provides high-performance EliteSiC technology while maintaining the high standards of quality, reliability and supply assurance needed for the EV traction market. onsemi’s decades of experience in the design, development and manufacturing of power semiconductor products support successful adoption in high-volume automotive applications.
“First and foremost, onsemi’s continuous and strategic investment in ramping SiC manufacturing capacity across its end-to-end supply chain gives us confidence in our ability to support the increasing demand for our solutions, now and in the future,” said Stefan Demmerle, Vice President of BorgWarner Inc. and President and General Manager, PowerDrive Systems.
BorgWarner’s silicon carbide traction inverters already offer higher efficiency, better cooling performance, and faster-charging rates in a more compact package than other options for EVs. By using EliteSiC technology, BorgWarner’s solutions expect to benefit from increased power density and higher efficiency, which increase the range and overall performance of EVs.
“The integration of EliteSiC technology in the traction inverter enables increased gas-equivalent miles per gallon (MPGe), which helps alleviate range anxiety – one of the key barriers to EV adoption,” said Simon Keeton, Executive Vice President and General Manager, Power Solutions Group, onsemi. “With onsemi’s chip-to-system level support and a track record of execution, we are able to provide industry-leading SiC-based solutions to BorgWarner at an accelerated pace to support its go-to-market requirements.”
Original – onsemi
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Infineon Technologies AG introduced a 62mm half-bridge and common emitter module portfolio with 1200 V TRENCHSTOP™ IGBT7 chips. The wide range of offerings in the proven 62mm housing is extended with the new 800 A maximum current class for the package family. The addition to the portfolio’s current classes provides system designers with a high degree of flexibility in designing higher current power solutions while offering higher power density and electrical performance.
It is tailored to meet the needs of solar central inverters as well as industrial drive applications and uninterruptible power supplies (UPS). Additionally, EV charging, energy storage systems (ESS) and other new industrial applications can be covered.
Based on the new micro-pattern trench technology, the 62mm module family with the 1200 V TRENCHSTOP IGBT7 chip has significantly lower static losses compared to the modules with the IGBT4 chipset. This results in significant loss reduction in applications, especially in industrial drives that typically operate at moderate switching frequencies. The IGBT’s oscillation behavior and controllability have been improved. In addition, the new power modules feature a maximum overload junction temperature of 175°C.
A solid, nickel-coated copper baseplate and screw main terminals ensure the high mechanical robustness of the 62mm module housing. The main terminals are located in the center of the housing, making them well suited for parallel circuits and 3-level configurations due to the low inductive DC link connection.
Unchanged standard package design and dimensions within the module family support mechanical compatibility with the previous module version. In addition, all modules are available with Infineon’s proven pre-applied thermal interface material (TIM).
Original – Infineon Technologies
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Magnachip Semiconductor Corporation announced that Gary Tanner has notified the Company of his intention to resign from the Company’s Board of Directors. The Board has accepted his resignation, which was effective as of July 14, 2023.
Mr. Tanner joined Magnachip’s Board in August 2015 and has served in multiple capacities, such as Non-Executive Chairman of the Board, Chair of the Risk Committee, and a member of the Audit, Compensation and Strategic Review Committees. During his tenure, Mr. Tanner has been instrumental to the Company’s trajectory, contributing to the Company’s strategic vision, operational details and corporate governance.
Most recently, Mr. Tanner led the establishment of the Risk Committee’s oversight of the Company’s corporate objectives, goals, strategies and initiatives relating to, and attending risks associated with, environmental, social and governance (“ESG”) matters, including corporate social responsibility, sustainability, public policy and other related matters such as the formation of a management-level ESG Steering Committee.
“Gary’s operational expertise and industry experience have been instrumental to our success and he will be greatly missed,” said Camillo Martino, Magnachip’s Chairman of the Board. “He has consistently brought a valuable perspective to our board deliberations. On behalf of the entire board, I thank him for his service to Magnachip and wish him well in his future endeavors.”
“The Company and the management team would like to express their gratitude to Gary for his dedicated service over the past eight years. He leaves a legacy of excellence that has positioned us well for the future,” said YJ Kim, Chief Executive Officer of Magnachip. “His strategic vision and his commitment to our stakeholders have been a source of inspiration to all of us. We are thankful for his years of service and his commitment to our success.”
Mr. Tanner’s departure is due to personal reasons. The Company will immediately begin a search for a new independent director to replace Mr. Tanner.
Original – Magnachip Semiconductor
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If you haven’t had a chance to visit a wonderful Lake Maggiore yet, this September you can enjoy one of the most beautiful places in Italy in a company of power semiconductors superstars discussing SiC & GaN technologies. After a successful series of events across the world, International Semiconductor Executive Summits (ISES) returns to Italy with ISES EU Power 2023 edition.
With a regional focus on the power semiconductor market, the EU Power International Semiconductor Executive Summits seeks to strengthen the EU supply chain and promote key executives in the semiconductor manufacturing, design, and research through our networking and conference platform which consists of working with key industry stakeholders to encourage progress and collaboration.
With speakers coming from STMicroelectronics, Infineon Technologies, Semikron Danfoss, onsemi, Wolfspeed, Renesas, ROHM, Nexperia, SK Siltron, Soitec, Okmetic, Aehr Test Systems, Amkor Technology, Innoscience, Cambridge GaN Devices, Ferrari, Volkswagen, Volvo, Škoda, and many more leaders of power electronics and automotive industries, you are about to be a part of the power semiconductors event like never before.
During two days of the event, all participants will be discussing and disclosing the latest news and advances in silicon carbide and gallium nitride technologies, sharing the view of the future and taking a close look at the current state of the industry, supply chain, global collaboration, exhisting problems and emerging opportunities.
You can find the agenda of ISES EU Power 2023 at the event website.
International Semiconductor Executive Summit EU Power provides a unique platform for networking and expanding your knowledge base. Here are just a few topics that will be covered this September:
- SiC and GaN Manufacturability
- Variety of WBG Applications
- SiC Wafer & Materials
- Power Packaging
- Design and Reliability
The event offers various packages for participation:
- Standard Pass
- Member Pass
- Partner Pass
- Virtual Pass
- Numerous Sponsorship Packages and VIP Passes
All interested to participate can register at ISES EU Power 2023 website.
ISES EU Power 2023 will take place at Regina Palace Hotel. Overlooking the shore of Lago Maggiore, the Regina Palace Hotel is located in a favored spot in the center of Stresa, considered the pearl of Lago Maggiore. The hotel represents yesteryear’s charm and prestige enriched by the history and the grace that each epoch has donated.
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Wolfspeed, Inc. issued the following statement regarding the recent decision by the Chinese Ministry of Commerce to restrict the export of gallium and germanium which is scheduled to take effect on August 1, 2023. The statement can be attributed to Wolfspeed spokesperson Melinda Walker.
“Following an internal review, the company has confirmed that its supply chain will not be impacted by the proposed export restrictions on gallium and germanium. Wolfspeed strives to manage its supply chain with our supply partners through principles such as quality, availability, social responsibility, and cost. We appreciate that global events can lead to dynamic market conditions that will require us to periodically review our supply chain, and we will continue to do so to ensure Wolfspeed’s needs are fulfilled.”
Original – Wolfspeed
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Aehr Test Systems announced financial results for its fiscal 2023 fourth quarter and full year ended May 31, 2023.
Fiscal Fourth Quarter Financial Results:
- Net sales were a record $22.3 million, up from $20.3 million in the fourth quarter of fiscal 2022.
- GAAP net income was a record $6.1 million, or $0.21 per diluted share, up from GAAP net income of $5.8 million, or $0.20 per diluted share, in the fourth quarter of fiscal 2022.
- Non-GAAP net income, which excludes the impact of stock-based compensation, was a record $6.8 million, or $0.23 per diluted share, compared to non-GAAP net income of $6.5 million, or $0.23 per diluted share, in the fourth quarter of fiscal 2022.
- Backlog as of May 31, 2023, was $24.5 million. Effective backlog, which includes all orders received since the end of the fourth quarter, is $39.7 million.
- Total cash, cash equivalents, and short-term investments as of May 31, 2023 were $47.9 million, up from $31.5 million at May 31, 2022.
Fiscal Year Financial Results:
- Net sales were a record $65.0 million, up 28% from $50.8 million in fiscal 2022.
- GAAP net income was a record $14.6 million, or $0.50 per diluted share, up 54% from GAAP net income of $9.5 million, or $0.34 per diluted share, in fiscal 2022.
- Non-GAAP net income, which excludes the impact of stock-based compensation, was a record $17.3 million, or $0.59 per diluted share, up 62% from non-GAAP net income of $10.7 million, or $0.38 per diluted share, in fiscal 2022.
An explanation of the use of non-GAAP financial measures and a reconciliation of Aehr’s non-GAAP financial measures to the most directly comparable GAAP financial measures can be found in the accompanying tables.
Gayn Erickson, President and CEO of Aehr Test Systems, commented:
“We are pleased to report record financial performance for both the quarter as well as the entire fiscal year ended May 31. For fiscal 2023, total revenue grew 28% to a record $65.0 million, bookings reached a record of $78.3 million, and our GAAP profit of $14.6 million and non-GAAP profit of $17.3 million were also records, growing 54% and 62% year over year, respectively. This record performance was driven by bookings and revenue shipments of our FOX wafer level test and burn-in systems and WaferPak full wafer Contactors for silicon carbide semiconductors used in electric vehicles and electric vehicle charging infrastructure, as well as silicon photonics devices used in data and telecommunications infrastructure and a new application for multichip modules using optical data interconnections.
“We saw fiscal 2023 as a breakout year for our unique and proprietary wafer level test and burn-in products. These products provide complete solutions for semiconductor manufacturers for high-volume test, burn-in, and stabilization of semiconductors such as those used in electric vehicles, electric vehicle charging infrastructure, photovoltaic (solar) power conversion, and data and telecommunications infrastructure. We also see on the horizon a significant new market opportunity for test and burn-in of semiconductors such as silicon photonics devices used in optical input/output (I/O) and co-packaged optics for data farms, computing, and Artificial Intelligence (AI) markets.
“In our fiscal fourth quarter just completed, we received the first purchase order from another new silicon carbide semiconductor company for our production FOX-XP solution to be used for volume production wafer level test and burn-in of silicon carbide devices for electric vehicles, trucks, and train traction inverter modules. The train traction inverter application represents an exciting new market driver for our FOX production test solutions due to the extreme reliability and length of service requirements of this application leading to prolonged test times. This new customer, a multinational industrial conglomerate and manufacturer of semiconductors including power semiconductors, is forecasting to grow their silicon carbide business significantly to meet the market demand, which we forecast will in turn drive incremental capacity of our FOX systems as well as our proprietary WaferPak full wafer Contactors.
“With the addition of this latest customer, we have significantly expanded our customer base by adding a total of four new silicon carbide customers this year. Each of these customers is already ramping or plans to ramp our products into high-volume production using our multi wafer test and burn-in systems.
“We also have multiple potential customers inquiring about our systems with the new high voltage option introduced last year to test and burn-in gallium nitride (GaN) semiconductors for power conversion applications. The gallium nitride market appears to be a potentially significant growth driver for our systems and WaferPak full wafer Contactors, particularly for automotive and photovoltaic applications where burn-in appears to be critical for meeting the initial quality and reliability needs of those markets.
“We also see a major market opportunity with the upcoming application of silicon photonics integrated circuits for use in optical chip-to-chip communication. This is in addition to the current photonics transceiver market used in data and telecommunications. Multiple companies such as Intel, nVidia, AMD, TSMC, and Global Foundries have made announcements regarding their product roadmaps for co-packaged photonics integrated circuits with microprocessors, graphics processors, chip sets for computing as well as artificial intelligence applications. During the fiscal fourth quarter, we received our first order from a current major silicon photonics customer for a volume production FOX-XP configured to enable cost-effective production test of wafers of next-generation photonic integrated circuits, which can be used in new optical I/O or heterogeneous integrated packages. This customer is one of the world’s largest semiconductor manufacturers and we expect to receive orders for additional production systems as they increase production of these devices.
“Another major milestone is that we have now installed both configurations of our new fully automated WaferPak Aligner at multiple customers, with the standalone Aligner already accepted and released into production just this week, and the FOX-XP with integrated Aligner expected to receive acceptance before the end of our current fiscal first quarter. Our new automated WaferPak Aligner allows hands free operation of WaferPak handling and Alignment and is available either as a standalone with movement between the Aligner and portable carts or in full integration with the FOX-XP system. As capacity and volume forecast increase, eliminating all manual interfaces for automated handling can become critical. The added automation capability of our new Aligner gives our wafer level test and burn-in offering even greater value and opens several incremental markets to Aehr, such as high-volume processors and chipsets with integrated photonics transceivers, flash and ultimately DRAM memories. This capability is also important for high volume, high mix devices requiring extremely high reliability and 100% burn-in such as automotive microcontrollers and sensors. We have received positive feedback on our new Aligner from multiple current and prospective customers across several markets and believe it will be an important addition to our product portfolio going forward.
“The market forecast for wafer level burn-in products is significant. William Blair estimates that the total available market for wafer level burn-in products for silicon carbide alone will be over $400 million by 2027. We believe Aehr has the potential to capture a significant portion of that market based on the level of silicon carbide engagements we have with customers across the globe.
“We start fiscal 2024 with an effective backlog of almost $40 million and a strong forecast from our current and prospective customers. Our engagements with numerous potential customers give us confidence in our growth expectations over the next several years, including record revenue and profit projections for this current fiscal year that ends next May, particularly as the positive momentum in demand for silicon carbide in electric vehicles continues to accelerate.”
Fiscal 2024 Financial Guidance:
For the fiscal year ending May 31, 2024, Aehr expects total revenue to be at least $100 million, representing growth of over 50% year over year, and GAAP net income of at least $28 million, representing earnings growth of greater than 90% year over year.
Management Conference Call and Webcast
Aehr Test Systems will host a conference call and webcast today at 5:00 p.m. Eastern (2:00 p.m. PT) to discuss its fiscal 2023 fourth quarter and full year operating results. To access the live call, dial +1 844-735- 3765 (US and Canada) or +1 412-317-5712 (International) and ask to join the Aehr Test Systems earnings call.
In addition, a live and archived webcast of the conference call will be available over the Internet at www.aehr.com in the Investor Relations section and may also be accessed by clicking here. A replay of the conference call will also be available via telephone beginning approximately two hours after conclusion of the call and will remain available for one week. To access the call replay, dial +1 877-344-7529 (US and Canada) or +1 412-317-0088 (International) and enter replay passcode 7898611.
Original – Aehr Test Systems
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Toshiba Electronic Devices & Storage Corporation has launched the “TRSxxx65H series,” the company’s third and latest generation of silicon carbide (SiC) Schottky barrier diodes (SBDs) for industrial equipment. Volume shipments of the first 12 products, all 650V, start today, with seven products housed in TO-220-2L packages and five in DFN8×8 packages.
The new products use a new metal in a third generation SiC SBD chip that optimizes the junction barrier Schottky (JBS) structure of the second generation products. They achieve industry-leading low forward voltage of 1.2V (Typ.), 17% lower than the 1.45V (Typ.) of the previous generation.
They also improve the trade-offs between forward voltage and total capacitive charge, and between forward voltage and reverse current, which reduces power dissipation and contributes to high efficiency of equipment.
Applications
- Switching power supplies
- EV charging stations
- Photovoltaic inverters
Features
- Industry-leading low forward voltage: VF＝1.2V (Typ.) (IF=IF(DC))
- Low reverse current:
TRS6E65H IR＝1.1μA (Typ.) (VR=650V) - Low total capacitive charge:
TRS6E65H QC＝17nC (Typ.) (VR=400V, f=1MHz)
Original – Toshiba
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STMicroelectronics has begun volume production of e-mode PowerGaN HEMT (high-electron-mobility transistor) devices that simplify the design of high-efficiency power-conversion systems. The STPOWER™ GaN transistors raise performance in applications such as wall adapters, chargers, lighting systems, industrial power supplies, renewable energy applications, and in automotive electrification.
The first two products in the family, the SGT120R65AL and SGT65R65AL, are industrial-qualified 650V normally-off G-HEMT™ in a PowerFLAT 5×6 HV surface-mount package. They have current ratings of 15A and 25A, respectively, with typical on-resistance (RDS(on)) of 75mΩ and 49mΩ at 25°C.
Also, 3nC and 5.4nC total gate charge and low parasitic capacitances ensure minimal turn-on/turn-off energy losses. A Kelvin source connection allows optimized gate driving. In addition to the reduced size and weight of the power supplies and adapters, the two new GaN transistors provide higher efficiency, lower operating temperature, and extended life time.
In the coming months, ST will introduce new PowerGaN variants, i.e. automotive-qualified devices, as well as additional power-package options including PowerFLAT 8×8 DSC and LFPAK 12×12 for high power applications.
ST’s G-HEMT devices facilitate the transition to GaN wide-bandgap technology in power conversion. GaN transistors with the same breakdown voltage and RDS(on) as silicon alternatives can achieve lower total gate charge and parasitic capacitances, with zero reverse-recovery charge.
These properties raise efficiency and enhance switching performance, allowing higher switching frequency that permits smaller passive components thereby increasing power density. Applications can therefore become smaller with higher performance. In the future, GaN is also expected to enable new power-conversion topologies that will further improve efficiency and decrease power losses.
Original – STMicroelectronics
