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The U.S. Department of Defense (DoD) has awarded GlobalFoundries (GF) a new 10-year contract for a supply of securely manufactured, U.S.-made semiconductors for use across a wide range of critical aerospace and defense applications.
With an initial award of $17.3 million this month and an overall 10-year spending ceiling of $3.1 billion, the new contract provides the DoD and its contractors with access to GF’s semiconductor technologies manufactured at its U.S. facilities. These GF facilities are DoD-accredited to the highest security level, Trusted Supplier Category 1A, which implements proven stringent security measures to protect sensitive information and manufacture chips with the highest levels of integrity to ensure they are uncompromised.
In addition to secure chip manufacturing for DoD systems used on land, air, sea, and in space, the new contract provides the DoD and its contractors with access to GF’s robust design ecosystem, IP libraries, early-access to new technologies in development, quick and efficient prototyping, and full-scale volume manufacturing. The contract was awarded through the DoD’s Defense Microelectronics Activity (DMEA) Trusted Access Program Office (TAPO).
“GF is proud to begin this new chapter of our decades-long partnership with the U.S government, and to continue serving as the leading supplier of securely manufactured essential chips for the U.S. aerospace and defense industry,” said Mike Cadigan, chief corporate and government affairs officer at GF. “This partnership provides DoD programs with ‘front-door access’ to advanced technologies in a way that is scalable and highly efficient. For this work, GF is accredited to provide the right level of security required for each program, from GF’s industry leading GF Shield protections, to strictly export controlled handling (e.g. ITAR), to the highest level of accredited microelectronics manufacturing security on the planet, Trusted Category 1A.”
This new contract is the third sequential 10-year contract of its kind between the DoD and the Trusted Foundry business team at GF and is the latest milestone in the longstanding partnership between the department and the company.
Original – GlobalFoundries
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NXP Semiconductors N.V. has been honored by three automotive partners. The company has collected supplier awards from DENSO and Hyundai Motor Group for its outstanding efforts in helping to ensure supply capacity, continuity and excellent customer service, as well as an innovation award from BMW Group for its digital car key solution.
“Successfully navigating the auto industry’s complex supply chain landscape to deliver true innovation our customers need can only be achieved through close collaboration with semiconductor manufacturers, Tier 1s and OEMs. We are extremely proud to be honored by BMW Group for our innovative UWB based digital car key solution, and by both DENSO and Hyundai Motor Group for NXP’s steadfast commitment to meeting our customer’s needs. Our teams work tirelessly to develop breakthrough technologies and foster collaborative customer relationships that enable NXP to deliver strategic long-term forecasts and expand capacity where needed, despite challenging conditions.”
Ron Martino, Executive Vice President, Global Sales at NXP
DENSO’s Business Partner of the Year Awards are given to companies that demonstrate a shared commitment to outstanding performance, exceptional quality, sustainability, diversity and inclusion, and advancing mobility. DENSO’s Gold Award for Special Achievements recognizes NXP’s outstanding efforts to ensure business continuity despite difficult supply conditions while maintaining strong customer service levels.
“This past year has been defined by an urgent need to adapt and evolve for emerging mobility trends, from electrification to connectivity and much more. All of our partners, but especially award recipients, have been crucial in helping us navigate such changes and deliver for our customers – quickly, sustainably and with enhanced value.”
Mike Winkler, vice president of the North America Purchasing Group at DENSO
In April, NXP received the prestigious 2022 Global Supplier of the Year award from Hyundai Motor Group, making NXP one of the first semiconductor vendors to receive such recognition. The award highlights the significance of the strong collaboration between semiconductor suppliers and auto OEMs from a supply and supply assurance viewpoint. It also recognizes NXP’s outstanding local team support and engagement in Korea.
In collaboration with Continental Automotive GmbH Regensburg, NXP was also awarded the BMW Group Supplier Innovation Award for the company’s innovative digital car key solution that leverages Ultra-Wideband technology. The digital key enables drivers to unlock their cars securely with their smartphones without needing a physical car key.
Original – NXP Semiconductors
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CDIL Semiconductors (Continental Device India Pvt. Ltd.), India’s first semiconductor chips and components manufacturer, will be adding new semiconductor packaging lines via the Government of India and MeitY’s SPECS scheme. With the new lines, CDIL aims to increase its annual capacity by 100 million units. The company initiated the first phase of this production with a surface mount packaging line of 50 million devices that will be inaugurated on September 28th, 2023 by Shri Rajeev Chandrasekhar Ji, Hon’ble Union Minister of State for Electronics and Information Technology & Skill Development and Entrepreneurship.
With 59 years of legacy, CDIL today is a semiconductor and electronics service provider to a worldwide customer base across Consumer, Industrial, Defence, Aerospace and Automotive. The company has many industry leaders as long term customers spread throughout the world including USA, UK, Germany, China, Hong Kong, Japan, South Korea, South Africa, and Egypt.
Commenting on the expansion of the product lines, Prithvideep Singh, General Manager, CDIL Semiconductors said, “In line with our steadfast commitment to innovation and market diversification, CDIL Semiconductors has strategically positioned itself to meet the burgeoning demands of the industry especially the power electronics, automotive, and defence sectors, both within India and on a global scale. As we reflect upon this progress, we recognize that this is only the beginning. The groundwork has been established and will stand as a pivotal cornerstone for the company’s future endeavours.”
CDIL has established an advanced high reliability (HiRel) and testing laboratory located at Mohali in addition to its NABL Accredited facility in Delhi. The HiRel laboratory is a crucial part of qualifying CDIL’s devices for stringent sectors like Automotive, Defence, and Aerospace.
Being the 1st Indian semiconductor company to obtain the IS/ISO 9002 and IATF 16949 quality system certifications, CDIL was the first to introduce India to silicon semiconductor technology in 1964. Currently, it produces a comprehensive range of discrete semiconductor devices including Transistors, Diodes, Rectifiers, Schottky Diodes, Thyristors, Voltage Regulators, Transient Voltage Suppressors and MOSFETS, with specialities in power Semiconductors, and high-reliability components.
Original – CDIL Semiconductors
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Toshiba Electronic Devices & Storage Corporation has started mass production of three 40 V N-channel MOSFETs using SOP Advance(WF) package for automotive and has expanded its lineup. The three models are “XPHR9904PS, XPH2R404PS and XPH3R304PS.”
The new products reduce drain-source On-resistance with the U-MOSIX process as with Toshiba’s precedence release products XPHR7904PS and XPH1R104PS. The drain-source On-resistance of XPH2R404PS is 2.4 mΩ (max), which is approximately 27 % lower than that of Toshiba’s existing product TPCA8083, and XPH3R304PS is 3.3 mΩ (max), which is approximately 42 % lower than that of Toshiba’s existing product TPCA8085.
The drain-source On-resistance of XPHR9904PS is 0.99 mΩ (max). Reducing drain-source On-resistance of these products contributes to low power consumption of automotive equipment. In addition, they are qualified with the automotive reliability standard AEC-Q101. The PPAP of IATF16949 is also available.
The package is a surface mount type SOP Advance(WF) that uses a wettable flank terminal structure, which facilitates automated visual inspection of the board mounting state.
Toshiba’s automotive MOSFETs support a variety of automotive applications and meet a wide range of customer needs.
Applications
- Automotive equipment: motor drives, switching power supplies, load switches, etc.
Features
- Low On-resistance
XPHR9904PS: RDS(ON)=0.99 mΩ (max) (VGS=10 V)
XPH2R404PS: RDS(ON)=2.4 mΩ (max) (VGS=10 V)
XPH3R304PS: RDS(ON)=3.3 mΩ (max) (VGS=10 V) - AEC-Q101 qualified
- PPAP of IATF16949 available
Original – Toshiba
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Power semiconductors based on silicon carbide (SiC) offer several advantages, like high efficiency, power density, voltage resistance, and reliability. This creates opportunities for new applications and improved charging station technology innovations. Infineon Technologies announced a collaboration with Infypower, a Chinese market leader in new energy vehicle charging. Infineon will provide INFY with the industry-leading 1200 V CoolSiC™ MOSFET power semiconductor devices to improve the efficiency of electric vehicle charging stations.
“The collaboration between Infineon and Infypower in the field of charging solutions for electric vehicles (EV) provides an excellent system-level technology solution for the local EV charging station industry,” said Dr. Peter Wawer, Division President of Infineon’s Green Industrial Power Division. “It will significantly improve charging efficiency, accelerate charging speed, and create a better user experience for owners of electric cars.”
“With Infineon’s more than 20 years of continuous advancement in SiC product offering and the strength of integrated technology, Infypower can consolidate and maintain its technological outstanding position in the industry by adopting state-of-the-art product processes and design solutions“, said Qiu Tianquan, President of Infypower China. “We can also set a new standard for charging efficiency of DC chargers for new energy vehicles. As a result, customers can enjoy more convenience and unique value, promoting the healthy development of the EV charging industry.”
SiC’s high power density enables the development of high-performance, lightweight, and compact chargers, especially for supercharging stations and ultra-compact wall-mounted DC charging stations. Compared to traditional silicon-based solutions, SiC technology in EV charging stations can increase efficiency by 1 percent, reducing energy losses and operating costs. In a 100 kW charging station, this translates to 1 kWh of electricity savings, saving 270 Euros annually and reducing carbon emissions by 3.5 tons. This drives the increasing adoption of SiC power devices in EV charging modules.
As one of the first SiC power semiconductor manufacturers to use trench gate technology for transistors, Infineon has introduced an advanced design that provides high reliability for chargers. The devices offer a high threshold voltage and simplified gate driving . The CoolSiC MOSFET technology has been subjected to marathon stress tests and gate voltage jump stress tests before commercial release and regularly afterwards in form of monitoring to ensure highest gate reliability.
By integrating Infineon’s 1200 V CoolSiC MOSFETs, Infypower’s 30 kW DC charging module offers a wide constant power range, high power density, minimal electromagnetic radiation and interference, high protection performance and high reliability. In this way, it is well suited for the fast charging demand of most EVs while possessing a higher efficiency of 1 percent compared with other solutions on the market. Consequently, significant energy savings and carbon dioxide emission reduction are achieved, which are leading at a global level.
Original – Infineon Technologies
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Innoscience Technology has shipped more than 300 million pieces of its InnoGan gallium nitride chips as of August 2023, helping customers achieve small size, high energy efficiency, and low loss product design.
This is in response to phenomenal market demand across multiple sectors multiple applications in the consumer category – fast charging, mobile phones, LEDs – as well as automotive LIDAR, data centres, and renewable energy and energy storage systems, which has seen analysts such as TrendForce’s in its 2023 GaN Power Semiconductor Market Analysis Report, state that “the global GaN power device market will grow from US$180 million in 2022 to US$1.33 billion in 2026, with compound growth rate of 65%”.
In November 2017, Innoscience began the world’s first 8-inch GaN-on-Si mass production line, adopting the Integrated Device Manufacturer (IDM) whole industry chain model, and launched its first low-voltage GaN power device in May 2018. By June 2019, Innoscience’s 650V high-voltage GaN device had passed JEDEC approval, and subsequently, Innoscience has been the only semiconductor company in the world that simultaneously mass-produces high-voltage and low-voltage GaN.
Market acceptance of Innoscience’s high quality, high performance GaN devices has been swift. Following its 2019 entry into the fast charging market, Innoscience’s 650V parts have been adopted in 30W-120W designs by leading brands including ASUS, Anker, Nubia, Baseus, Greenlink, and Flash.
In 2020, Innoscience’s 100V low-voltage GaN was successfully used by Hesai in mass-production LIDAR designs, allowing lasers to achieve image transmission in a shorter time.
In March 2021, the Tencent×Nubia Red Magic mobile phone 6Pro was released. It comes equipped as standard with industry’s first 120W Black Rubik’s Cube GaN fast charge, which is based on Innoscience’s 650V chip. With the successive adoption by Oppo, Vivo, Lenovo and other manufacturers, it has become an industry trend for mobile phones to be equipped with GaN fast charging as standard.
March 2021 saw the mass-production of Innoscience’s bi-directional conduction chip V-GaN officially begin; this device is the only GaN chip in the world that can be applied to high-voltage side load switches, smartphone USB/wireless charging ports with built-in OVP protection, multi-power supply system switch circuits, and other scenarios:one V-GaN replaces two Si MOSFETs in load switching applications resulting in a smaller and more efficient solution.
In October of the same year, Innoscience scored another industry first, as OPPO used the company’s self-developed bi-directional conduction VGaN IC as the internal power switch in its latest smart phone. Other mobile phone makers such as Realme, OnePlus, Lenovo, and Motorola have also successively adopted VGaN for charging protection.
In May 2022, Shounuo released the world’s smallest 45W/65W PD car charger, using Innoscience’s 40V low-voltage INN040FQ043A.
Then in July, Anker and Innoscience jointly released the world’s first 65W full-GaN fast charger. This design uses GaN power chips at both the AC and DC ends for the first time, taking system power density and efficiency to a whole new level.
Later, in October 2022, Innoscience achieved mass production of GaN products targeting industrial power supplies – again an industry first – comprehensively improving energy conversion efficiency and reducing system energy consumption.
In November 2022, Innoscience’s INN100W032A won the IIC World Electronics Achievement Award. The gate charge of this product is only 20% of a traditional silicon MOSFET, and its Ciss is only 40% of its silicon counterpart. It can be widely applied in motor drive, Class D, data centre, motor-driver, communication base station and other product fields. In January 2023, Innoscience launched the SolidGaN ISG3201, a 100V highly-integrated half-bridge drive packaged solution, further improving the overall system performance of 48V power supply of data centre module power supplies, motor drives, class D power amplifiers, photovoltaic inverters and light hybrid electric vehicles.
The move to GaN as the premium power semiconductor technology is driven both by new GaN products and market demands. As an example, in April this year, Innoscience’s IATF 16949 automotive-grade low-voltage parts successfully expanded from industrial to automotive applications, with use in autonomous vehicle LIDAR systems.
Then in July 2023, Innoscience began to apply GaN in the field of renewable energy, reducing the size and improving the efficiency of photovoltaic modules.
By the end of August 2023, Innoscience had successfully mass-produced 54 different types of high-voltage GaN chips (650V-700V) and 20 types of medium-low voltage GaN chips (30V-150V). Products span three chip categories: wafers, discrete devices and integrated solutions.
Commented Dr Denis Marcon, Innoscience’s General Manager, Europe: “We are just at the start of the GaN story. The first applications were all in consumer, but GaN is undoubtedly the key to reducing costs and increasing efficiency in the industrial field as well. And according to automotive industry forecasts, GaN may enter automotive market already this year penetrating applications such as low-power OBC and DC-DC applications in 2025.
With such rapid growth in market demand, the reliability of devices, price competitiveness and stable supply in large quantities are now the major concerns of users. Based on an advanced Innoscience’s 8-inch GaN-on-Si IDM manufacturing platform, Innoscience’s current production capacity has reached 15,000 wafers per month, providing tremendous advantages in scale, reliability and cost.”
Original – Innoscience Technology
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NXP Semiconductors N.V. announced it is strengthening its European research and development (R&D) through grants to be provided via the 2nd Important Project of Common European Interest on Microelectronics and Communication Technologies (IPCEI ME/CT), with the final investment decision pending confirmation of the level of public funding. Dedicated NXP teams across Austria, Germany, the Netherlands and Romania will innovate in core technologies across automotive, industrial and cybersecurity. This includes 5nm, advanced driving assistance and battery management systems in automotive, 6G and Ultra-Wideband as well as artificial intelligence (AI), RISC-V and post-quantum cryptography.
“NXP’s planned investments in our Austrian, German, Dutch, and Romanian operations signal our strong commitment to the EU’s goal of enabling both digital and green transition. Our activities through IPCEI ME/CT complement NXP’s planned joint venture participation in TSMC’s first European foundry. It also underscores our commitment to strengthening innovation and supply chain resilience in Europe. NXP believes expanding research, development, and manufacturing efforts in Europe is of vital importance, and each of these three critical elements must be successfully integrated to achieve greater European semiconductor ecosystem resilience.”
Kurt Sievers, President and CEO of NXP
Extensive research, development, and manufacturing presence across multiple sites in all four countries enable NXP to develop cutting-edge technology and products that contribute significantly to the achievement of EU industrial strategies. In close collaboration with a strong ecosystem of more than 50 partners from industry and academia across Europe, NXP will strengthen key technologies of microelectronics in Europe.
No other microelectronics company participating in IPCEI ME/CT is currently planning to invest in its operations across so many EU member states. NXP is also an active participant in three of the four IPCEI ME/CT workstreams: “Sense”, “Think”, and “Communicate”, reflecting NXP’s areas of leadership and strategic focus.
NXP’s planned investments in Austria, Germany, the Netherlands, and Romania follow the announcement that the company is going to form a new joint venture, ESMC (European Semiconductor Manufacturing Company), with TSMC, Bosch, and Infineon with plans to establish TSMC’s first semiconductor manufacturing site in Europe. The new 300mm fab, planned to be built in Dresden, Germany, is expected to have a monthly production capacity of 40,000 300mm (12-inch) wafers on TSMC’s 28/22 nanometer planar CMOS and 16/12 nanometer FinFET process technology, further strengthening Europe’s semiconductor manufacturing ecosystem with advanced FinFET transistor technology and creating about 2,000 direct high-tech professional jobs.
NXP in Austria
NXP Austria is a center of excellence for cryptography and security, advancing solutions that make lives easier, better and safer. NXP Austria innovates hardware and software solutions as well as services for the IoT, automotive, Industry 4.0 and mobile sectors. At NXP Austria, nearly 800 people from approximately 50 countries work on Innovations to research, design, develop, manage, and promote NXP’s products.
For more information on NXP in Austria, visit nxp.com/austria
NXP in Germany
With over 1,200 people, Germany is a very important R&D hub for NXP with a focus on semiconductor solutions for the automotive market as well as secure connected edge applications, such as industrial IoT, mobile, and wearables. Primary R&D competencies in Hamburg, Munich, and Dresden include cybersecurity, automotive processing, and RF. A collaborative quantum computing initiative was established in 2023 in Hamburg. IPCEI will help to further strengthen and expand these core competencies. In addition, the German sites are home to an experienced sales engineering team that completes NXP’s global network of customer support.
For more information on NXP in Germany, visit nxp.com/germany
NXP in the Netherlands
NXP has over 2,200 people and significant operations across three sites in the Netherlands. NXP’s international headquarters is located on the High Tech Campus Eindhoven. R&D groups based in Eindhoven focus on security innovation, software and hardware IP development, chip design, system innovation and certification. NXP Nijmegen features manufacturing, R&D, testing, technology enablement and support functions. NXP’s Delft site is home to hardware and software design teams focusing on secure wireless solutions including automotive electronics such as radio, GPS, car access systems, and sensor electronics.
For more information on NXP in the Netherlands, visit nxp.com/netherlands
NXP in Romania
NXP Bucharest’s over 1,000 people focus on software development for automotive, microcontrollers and connectivity products as well as IT service management and customer supply operations. Each year, NXP Romania hosts interns who learn the specifics of software development in automotive, edge computing and IoT.
For more information on NXP in Romania, visit nxp.com/romania
Original – NXP Semiconductors
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Nicolas Dufourcq, Chairman of the Supervisory Board of STMicroelectronics N.V., and Maurizio Tamagnini, Vice-Chairman, have asked Jean-Marc Chery, ST’s President and CEO, to be available for a reappointment in his current role. Mr. Chery has accepted the proposal.
Therefore, the Supervisory Board has decided to propose for shareholder approval at the Company’s 2024 Annual General Meeting of Shareholders, the reappointment for a three-year mandate of Jean-Marc Chery as the sole member of the Managing Board and the Company’s President and Chief Executive Officer.
The decision recognizes the importance of the continuity of ST’s strategy, execution and value proposition under Mr. Chery’s leadership.
Original – STMicroelectronics
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IQE plc, the leading supplier of compound semiconductor wafer products and advanced material solutions to the global semiconductor industry, announced a strategic collaboration with VisIC Technologies, a global leader in the provision of GaN (Gallium Nitride) power solutions to the automotive sector, to develop the highest reliability gallium nitride D-Mode (D-Mode GaN) power products for use in electric vehicles inverters.
IQE and VisIC Technologies will collaborate to develop 200mm (8”) D-Mode GaN power epiwafers that will be developed at IQE’s UK facilities, leveraging IQE’s well-established expertise in GaN technology.
VisIC Technologies, with its ground-breaking D3GaN technology (Direct Drive D-Mode GaN), brings the future of EV inverters into focus. This technology promises to reduce power consumption, increase reliability and enhance performance in electric vehicles. By combining VisIC Technologies’ innovative Power Electronics solutions with IQE’s epitaxy excellence, this partnership aims to accelerate the adoption of GaN-on-Silicon technology in EVs, significantly contributing to the evolution of sustainable transportation.
The collaboration marks another important milestone in IQE’s strategy of diversification into the high-growth Power market, first announced at its 2022 Capital Markets Day. IQE sees significant opportunities in the GaN Power epiwafer market in particular, which is forecast to reach a $632m value by 2027.
Original – VisIC Technologies
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Aehr Test Systems announced it has received an initial customer order for a FOX-NP™ wafer level test and burn-in system, multiple WaferPak™ Contactors, and a FOX WaferPak Aligner to be used for engineering, qualification, and small lot production wafer level test and burn-in of their silicon carbide devices. The customer is a US-based multibillion-dollar semiconductor supplier serving several markets including automotive, computing, consumer, energy, industrial, and medical. The FOX-NP system, including the FOX WaferPak Aligner and initial WaferPaks are scheduled per the customer’s requested accelerated schedule to ship by the end of the calendar year 2023.
The FOX-NP system is configured with the new Bipolar Voltage Channel Module (BVCM) and Very High Voltage Channel Module (VHVCM) options that enable new advanced test and burn-in capabilities for silicon carbide power semiconductors using Aehr’s proprietary WaferPak full wafer Contactors. This new order highlights Aehr’s continued progression within the growing silicon carbide global power market.
Gayn Erickson, President and CEO of Aehr Test Systems, commented, “We are very excited that after conducting a detailed financial evaluation and multiple onsite visits to Aehr’s application lab, this new customer selected our FOX-P solution for engineering, qualification, and production of their silicon carbide power devices.
This evaluation included cost of ownership and system throughput, as well as device test, burn-in, and stabilization coverage. As their production capacity increases, they told us that they will quickly move to our FOX-XP multi-wafer test and burn-in systems for high-volume production. In addition to the automotive electric vehicle device opportunity, this customer in particular sees the enormous opportunity for silicon carbide power devices in industrial, solar, and other power applications.
“William Blair forecasts that in addition to the 4.5 million six-inch equivalent wafers that will be needed to meet the demand for electric vehicle related silicon carbide devices in 2030, another 2.8 million wafers are needed to address industrial, solar, electric trains, energy conversion and other applications in 2030. The interesting part of this is that most of these applications will be served with discrete MOSFETS in single die packages.
The cost of ownership of our solution proved to be more cost-effective and efficient for these devices than package part burn-in after the die are packaged in packages such as TO-247 or other discrete packages. This is a strong testimony of the advantage of wafer level burn-in as a better alternative to package part burn-in. This expands our silicon carbide test and burn-in market even more and this new customer helps expand Aehr’s presence in this market as our total addressable market (TAM) continues to grow.
“Aehr’s FOX-P systems and proprietary WaferPak full wafer Contactors enable our customers to do economical production volume test and reliability burn-in with processes such as High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) very cost-effectively and ensure extremely high device quality. Our systems are typically used for long burn-in times lasting up to 24 hours or more.
We can do this for under $5.00 per hour per wafer capital depreciation cost while testing and burning-in up to several thousand devices at a time per wafer. This is also in a test system footprint that is up to 94% less than a typical test system on a standard semiconductor wafer prober, which in a precious clean room wafer facility is extremely important and saves a great deal of cost.
“The FOX family of compatible systems including the FOX-NP and FOX-XP multi-wafer test and burn-in systems and Aehr’s proprietary WaferPak full wafer contactors provide a uniquely cost-effective solution for burning in multiple wafers of devices at a single time to remove early life failures of silicon carbide devices, which is critical to meeting the initial quality and long-term reliability of the automotive, industrial, and electrification infrastructure industry needs.”
The FOX-XP and FOX-NP systems, available with multiple WaferPak Contactors (full wafer test) or multiple DiePakTM Carriers (singulated die/module test) configurations, are capable of functional test and burn-in/cycling of devices such as silicon carbide and gallium nitride power semiconductors, silicon photonics as well as other optical devices, 2D and 3D sensors, flash memories, magnetic sensors, microcontrollers, and other leading-edge ICs in either wafer form factor, before they are assembled into single or multi-die stacked packages, or in singulated die or module form factor.
Original – Aehr Test Systems
