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SiC power devices are changing and reshaping many industries today, providing numerous benefits over fundamental silicon-based semiconductors. One of the key advantages is a dramatically reduced power losses with increased efficiency achieved through silicon carbide exceptional material properties. SiC power semiconductors can operate at higher frequencies and temperatures delivering higher power densities and reduced cooling requirements. One of the industries benefiting much from the use of SiC power devices is the energy storage.
Adopting silicon carbide technology, energy storage systems can deliver great energy saving and much better overall system performance.
Reliability is one of the major requirements for any power electronics system, and ESS is no exception. That is why many ESS companies today choose SiC technology over Si. Silicon carbide power devices provide increased robustness and resistance when it comes to operating in extreme conditions. SiC temperature robustness allows to eliminate the risk of the system overheating – one of the major reasons for failure.
Leading the development process of SiC power devices for a variety of emerging applications including vehicle electrification, photovoltaics, and, of course, battery energy storage systems, Leapers Semiconductor is expanding its portfolio of the hybrid modules with the 3-level power module to provide increased reliability for the ESS, solar, and the other 3-level applications.
The all new DFH10AL12EZC1 power module integrates 1200V SiC MOSFET chips and 1200V IGBT chips in E2 package designed to correspond to high requirements set by the above-mentioned applications.
Leapers Semiconductor DFH10AL12EZC1 hybrid power module features:
- Blocking voltage:1200V
- Rds(on): 9.5mΩ (VGS =15V)/8.3mΩ (VGS =18V)
- Low Switching Losses
- High current density
- Press FIT Contact Technology
- 175°C maximum junction temperature
- Thermistor inside
DFH10AL12EZC1 hybrid power modules guarantee the enhanced efficiency, improved power conversion, and increased overall reliability and durability with reduced system size.
The other applications that will benefit from DFH10AL12EZC1 include:
- Solar inverter Systems
- Three-level Systems
- Energy Storage Systems
- High Frequency Switching Systems
Original – Leapers Semiconductor
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The opening ceremony of WeEnwin Jinshan Module Plant was held in the Shanghai Jinshan High-tech Industrial Development Zone. The ceremony marked the official commencement of WeEn’s world-first module plant, intended to produce various types of power module products utilized in consumer electronics, communications, new energy, and automotive applications. The products connect customers and the ecosystems, actively fostering the high-quality development of the industry.
Markus Mosen, WeEn Semiconductors Co., Ltd. CEO; Chen Song, COO; Tang Ziming, CFO; Wu Rui, CHRO; Peng Xijun, general manager of Shanghai New Jinshan Industrial Investment & Development Co., Ltd; Zhao Fei, deputy director of the Jinshan District Development and Reform Commission; Cao Qin, deputy director of the Jinshan District Investment Promotion Office; other relevant department heads of the New Jinshan Development Company; WeEn boards Zhang Xinyu, Chang Liang, and Zhu Fenglin; together with representatives from WeEn’s global partners, numerous customers, vendors, approximately 200 guests attended the event to personally witness this historic step in WeEn’s new journey.
Located in the Shanghai Bay Area High-tech Industrial and Development Zone, WeEn Jinshan Module Plant covers an area of 11,000 square meters. The construction of the plant began in August 2022. Eight months later in April 2023, the building quality and fire inspection compliance tests were successfully completed.
WeEn Semiconductors Co., Ltd. has invested approximately RMB 200 million in the wholly-owned new Jinshan Module Plant, which has introduced over a hundred of the industry’s most advanced power module production and testing equipment to meet the market’s mainstream demand for various types of module products.
It is worth underscoring that the newly established WeEnwin Module Plant has simultaneously set up an advanced packaging R&D center to develop and mass produce cutting-edge packaging technologies while researching the applicability of new materials.
To optimize efficiency and reliability, the fully automated module production line is equipped with top-notch processing capabilities, including lead-free chip bonding/silver sintering bonding, lead-free soldering/ultrasonic soldering of terminals, aluminum wire bonding, and copper tab connections. Currently, WeEnwin module plant. has obtained ISO9001 and IATF16949 certifications and undergone VDA6.3 process audits, evidence of the company’s robust system that guarantees top-quality products.
Peng Xijun, general manager of Shanghai New Jinshan Industrial Investment & Development Co., Ltd, warmly congratulated WeEnwin for the opening, noting that the event was a testimony of the concerted efforts of all parties. He further stated that the collective endeavors have significant importance in elevating the power semiconductor industry’s development level and accelerating the concentration of the optoelectronic chip industry in the high-tech industrial and development zone.
In addition, he expressed his wish for the high-tech zone, as it embarks on its new era journey, to continue harnessing resources and efforts and attracting policies aimed at strengthening the innovation chain, extending the industrial chain, and improving the ecosystem.
Meanwhile, Markus Mosen, WeEn Semiconductors Co., Ltd. CEO stated, “Given the favorable winds, this is the perfect time to set sail.” WeEn’s investment in the world’s first module factory has successfully transitioned from planning to operation according to schedule. Therefore, we remain grateful for the strong support from the Jinshan District People’s Government, Shanghai Bay Area High-tech Industrial Development Zone, and FITA Tech.
There is no doubt that without the collective efforts of our partners and team, this accomplishment would not have been possible. At WeEnwin, we will seize the opportunities of the era, leverage our product and technological strengths, and provide reliable and efficient power semiconductor devices to our customers and partners. As we inject new impetus into pragmatic cooperation, we remain confident in our ability to propel the ship of power device development toward a new journey.”
The operation of the WeEnwin Jinshan Module plant will enhance the efficiency of WeEn Semiconductors Co., Ltd.’s entire industry chain layout and services. In addition to producing the most advanced SCR / FRD / IGBT / SIC modules, the factory will significantly improve the experience of customers and partners by offering innovative modules and packaging services for the automotive and renewable energy markets. It is projected that the first batch of products from the new Jinshan Module Factory for Chinese and overseas customers will be shipped in the fourth quarter of 2023.
Original – WeEn Semiconductors
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GaN Systems has partnered with ACEpower to expedite the widespread adoption of GaN technology in electric vehicles. By harnessing GaN Systems’ cutting-edge power semiconductors, extensive expertise in EV power electronics, and ACEpower’s exceptional track record in high-power system design and high-volume manufacturing capabilities, this partnership will accelerate the GaN-based electric vehicle power market in China.
GaN power semiconductors play a pivotal role in realizing the compact size, lightweight, and high efficiency demanded by the next generation of high-performance electric vehicles. By harnessing GaN Systems’ automotive-grade, high-performance GaN power transistors alongside ACEpower’s deep expertise in the power electronics industry, the companies are combining their distinctive capabilities to unlock the full potential of GaN performance advantages.
In addition to other areas, the partnership will focus on topology optimization and advanced integrated power modules, and high-frequency magnetics design to enhance crucial electric vehicle efficiency and power density significantly.
“We are delighted to announce our partnership with GaN Systems to accelerate GaN adoption in electric vehicles,” said Albert Wang, CEO of ACEpower. “Our longstanding relationship with GaN Systems, coupled with their unrivaled expertise in high reliability, automotive-qualified GaN semiconductors—a vital component for electric vehicles—brings great business opportunities in the fast growth Chinese EV market. Together, we are committed to driving innovation that will revolutionize electric vehicles, particularly in efficiency and power density, delivering substantial benefits to the industry.”
This combination tackles fundamental challenges related to traditionally larger, heavier, inefficient, and costlier power systems based on legacy silicon power transistors. GaN power transistors enable higher efficiency and power density at a faster switching speed for onboard chargers, DC/DC converters, and traction inverters. These advancements translate into faster charging, extended driving range, and reduced overall system costs.
“Today’s announcement marks a significant leap in our cooperative efforts with ACEpower to drive GaN adoption in the Chinese electric vehicle market,” said Jim Witham, CEO of GaN Systems. “This collaboration paves the way for disruptive and game-changing advancements in next-generation electric vehicles. Building upon our strong industry relationships with key players such as BMW, Toyota, and Vitesco, GaN Systems and ACEpower are poised to make a substantial impact in accelerating GaN adoption across the electric vehicle platform.”
GaN Systems and ACEpower’s shared vision extends to capturing substantial market value in emerging sectors such as data centers and electric vehicles. Future initiatives encompass the joint development of high-power density GaN-powered OBCs rated at 6.6kW and 11kW for electric vehicles, solidifying their commitment to driving innovation and advancing the power industry.
Original – GaN Systems
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Bernd Hops, Chief Communications Officer and Head of Communications & Public Policy at Infineon Technologies AG, will leave the company at the end of September at his own request and by best mutual agreement. The succession process has been initiated.
“Bernd Hops has played a key role in shaping Infineon’s communications and political work over the past more than ten years. We accept his decision with great regret,” said Jochen Hanebeck, CEO of Infineon.
“Thanks also to Bernd Hops’ intensive work, awareness among our key stakeholders and the general public of the important contribution Infineon is making to the decarbonization and digitalization of our world has grown significantly in recent years. Under his leadership, the Communications and Public Policy team has also been significantly expanded. On a personal note, I would like to express my sincere thanks to Bernd Hops for his outstanding support, especially during the transition period last year when I took over the role as CEO of Infineon.”
“The decision to leave Infineon after more than ten years was not an easy one for me. I am grateful for having been able to help appropriately position this great company with its dedicated people. Now I would like to pursue a new challenge. I would like to thank Jochen Hanebeck and his predecessor Reinhard Ploss very much for the great trust they have placed in me, which is a prerequisite for good corporate communication. I would also like to thank my team and the many other colleagues who accompanied me at Infineon and strongly supported me.”
Bernd Hops joined Infineon in 2013 as Head of CEO Communications and subsequently took on various additional leadership roles in Communications & Public Policy. In January 2020, he assumed global responsibility for the department. Previously, Bernd Hops worked as a business editor and reporter at “Der Tagesspiegel” and “Financial Times Deutschland” and as a communications manager at the management consultancy Roland Berger and the utilities company Verbundnetz Gas.
Original – Infineon Technologies
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Global demand for chips for the automotive and consumer goods industries remains high. That is why Bosch is continuing to expand its semiconductor business. The company has now opened a new test center for chips and sensors in Penang, Malaysia, at a cost of some 65 million euros; it plans to invest a further 285 million euros at the site by the middle of the next decade.
“With our new semiconductor test center in Penang, we are creating additional capacity within our worldwide manufacturing network to meet the continued high demand for chips and sensors,” said Dr. Stefan Hartung, chairman of the Bosch board of management. “Semiconductors are a decisive success factor for all Bosch business areas, and the expansion of this business is strategically very important.”
In total, Bosch has some 100,000 square meters of land available on Penang’s mainland strip. The new test center currently covers more than 18,000 square meters and includes clean rooms, office space, and laboratories for quality assurance and manufacturing. By the middle of the next decade, up to 400 associates will be working there. With the new factory and a total of 4,200 associates, Penang is now Bosch’s biggest location in Southeast Asia.
Semiconductor manufacturing can basically be divided into two sections: frontend manufacturing and backend manufacturing. For the latter, Malaysia is an important hub in the global semiconductor supply chain. The country is estimated to cover around 13 percent of global backend manufacturing. According to official figures, in recent years the state of Penang has generated more than 5 percent of worldwide semiconductor revenue.
“The new test center in Penang brings our manufacturing network closer to the companies that serve the further value chain of semiconductor manufacturing as well as to customers in this important Asian market. That shortens delivery times and routes, and it improves our competitiveness,” says Dr. Markus Heyn, member of the Bosch board of management and chairman of the Mobility business sector.
The frontend is where the actual circuits are attached and patterned on the wafers; at Bosch, for example, this work is currently performed in the clean rooms of the wafer fabs in Reutlingen and Dresden. The backend is where the individual chips are then separated from the wafers, assembled, and tested. Bosch currently carries out most of the final testing of its semiconductors in Reutlingen, Germany; Suzhou, China; and Hatvan, Hungary.
Those locations will now be joined by the new test center in Penang, Malaysia. The fully connected plant is one of the most advanced semiconductor test centers in Southeast Asia. Here, Bosch will immediately begin testing semiconductors that the company manufactures at its frontend in Dresden, among other locations. “Our new test center in Penang completes our internal process chain, especially for semiconductors from Dresden,” Heyn says.
Bosch is pursuing a global growth strategy with its semiconductor business. Over the next three years, the company plans to invest some three billion euros in Dresden and Reutlingen, both as part of its own investment plan and under the auspices of the European IPCEI ME/CT (“Important Project of Common European Interest on Microelectronics and Communication Technologies”) funding program.
Following its expected acquisition of part of the business of TSI Semiconductors, based in Roseville, California, which is expected before the end of the year, Bosch plans to invest roughly an additional 1.4 billion euros in retooling the fab to support the latest manufacturing processes for silicon carbide semiconductors.
Original – Bosch
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Mitsubishi Electric Corporation announced that it has taken an equity position in Novel Crystal Technology, Inc., a Japanese company that develops and sells gallium-oxide wafers, a promising candidate for use in superior energy-saving power semiconductors that Mitsubishi Electric intends to develop at an accelerated pace in support of global decarbonization.
Novel Crystal Technology, one of the world’s first companies to develop, manufacture and sell gallium-oxide wafers for power semiconductors, and now a leading producer of these products, has manufacturing technology that Mitsubishi Electric will use in its production of gallium-oxide power semiconductors.
Mitsubishi Electric has been contributing to energy savings in power-electronic products by producing semiconductors made of silicon and silicon carbide (SiC). Recent advances have been achieved with SiC and gallium-nitride wafers, but gallium-oxide wafers are expected to help achieve even higher breakdown voltages and lower power dissipation.
Mitsubishi Electric now expects to accelerate its development of superior energy-saving gallium-oxide power semiconductors by combining its own expertise in the design and manufacture of low-energy-loss, highreliability power semiconductors with Novel Crystal Technology’s expertise in the production of gallium-oxide wafers.
Original – Mitsubishi Electric
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Infineon Technologies AG and SolarEdge Technologies, Inc. announced the signing of a multi-year Capacity Reservation Agreement (CRA).
Extending the existing partnership, Infineon will supply SolarEdge with critical components for a variety of SolarEdge products. In addition to the CRA, the companies will collaborate on the development of future technologies and cutting-edge solar products based on wide-bandgap (WBG) materials that are key for global green energy supplies.
“We are excited to expand our strategic partnership with SolarEdge to shape innovation in green energy technologies and decarbonization”, said Andreas Urschitz, Chief Marketing Officer at Infineon. “Our long-lasting collaboration is an enormous asset for both companies that paves the way for breakthrough-innovation and accelerated growth, as we combine our expertise and resources. With the latest investments in silicon carbide (SiC) and gallium nitride (GaN) manufacturing capacity, Infineon underlines its commitment to be a leading partner in climate technologies such as solar power.”
Uri Bechor, Chief Operating Officer at SolarEdge, said: “Securing the capacity levels of critical components such as power and wide-bandgap from Infineon enhances SolarEdge’s supply chain resiliency. This Capacity Reservation Agreement with Infineon is in line with our strategy to continue leading the global industry in solar energy advancement.”
Original – Infineon Technologies
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onsemi and Magna announced a long-term supply agreement (LTSA) for Magna to integrate onsemi’s EliteSiC intelligent power solutions into its eDrive systems.
By integrating onsemi’s industry-leading EliteSiC MOSFET technology, Magna eDrive systems can offer better cooling performance and faster acceleration and charging rates, improving efficiency and increasing the range of electric vehicles (EVs). Additionally, onsemi’s end-to-end silicon carbide (SiC) manufacturing capability, combined with its ability to ramp production quickly, improves Magna’s vertical integration and simplifies its supply chain to meet the growing demand for its SiC-based products for EVs.
“With range anxiety still a top deterrent to EV adoption, our technology enables Magna to go further, easing the transition to an electrified future,” said Asif Jakwani, senior vice president and general manager, Advanced Power Division, onsemi. “Our latest EliteSiC MOSFET technology enables increased power density and higher efficiency in traction inverters, resulting in improved gas-equivalent miles per gallon without compromising driving dynamics and safety.”
Simultaneous with the signing of the LTSA, the companies entered a separate agreement for Magna to also invest approximately $40 million for the procurement of new SiC equipment at onsemi’s New Hampshire and Czech Republic facilities to ensure access to future supply.
“We believe that a secure supply of silicon carbide chips will be critical to our ability to continue delivering innovative and efficient eDrive systems for our customers,” said Diba Ilunga, president Magna Powertrain. “Accordingly, we are both investing to grow SiC production capacity, and establishing the commercial basis for long-term supply of SiC-based chips to advance our electrification strategy and outpace the competition.”
Silicon carbide is a wide bandgap semiconductor substrate that is ideal for high-temperature, high-power applications such as electric vehicles, but it is incredibly difficult to produce. With a limited number of manufacturers and significant demand for SiC-based designs, OEMs and automotive suppliers are increasingly looking to secure long-term, reliable supply.
Original – onsemi
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Axcelis Technologies, Inc. announced a shipment of a Purion H200™ SiC ion implant system to Wolfspeed. The evaluation system will be used to support the production of power devices for electric vehicle (EV) applications.
President and CEO Dr. Russell Low of Axcelis commented, “The power device market continues to grow rapidly and is a key driver of our growth globally. We are pleased to continue to support Wolfspeed’s fab capacity expansion and are also excited about the potential of this new opportunity focused on high current implant applications in silicon carbide power devices.”
“The popularity of electric vehicles is only steepening, and Wolfspeed is focused on scaling our capacity to meet the surge in demand for our silicon carbide devices. We partnered with Axcelis due to their expertise, highly differentiated features, and process control capabilities that are essential for power device applications,” said Missy Stigall, Wolfspeed senior vice president of global fab operations. “Together, we will work to ease supply chain constraints as more and more EVs utilizing Wolfspeed’s silicon carbide technology are introduced to the market.”
Wolfspeed is currently engaged in a $6.5 billion capacity expansion effort to dramatically increase production. This includes the John Palmour Manufacturing Center for Silicon Carbide, the world’s largest Silicon Carbide crystal growth facility currently under construction in North Carolina, and the final build-out of the company’s Mohawk Valley Fab in New York. Earlier this year the company also announced its plans to build a highly automated, cutting-edge 200mm wafer fabrication facility in Saarland, Germany.
Original – Axcelis Technologies
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onsemi announced it has secured $1.95B in long-term supply agreements (LTSAs) for its intelligent power technologies with leading global manufacturers of solar inverters, contributing to onsemi’s position as the number one power semiconductor supplier in this rapidly growing market.
By offering superior die technology with optimized and customized module design and packaging, onsemi enables solar inverter providers to compete on time-to-market, product development, supply resilience and robust quality assurance. With these benefits, the company has signed LTSAs with eight of the top 10 solar inverter suppliers, emphasizing the reputation onsemi has earned as a trusted industry partner.
“Solar power has emerged as one of the fastest growing markets and offers the most cost-competitive source for large-scale renewable energy installations,” said Asif Jakwani senior vice president and general manager, Advanced Power Division, Power Solutions Group, onsemi. “With onsemi’s intelligent power technologies, customers can achieve greater efficiency and power density to capture and save as much energy from the sun as possible to advance our common mission towards a more sustainable future.”
Solar inverters convert Direct Current (DC) electricity generated by solar panels to grid-compatible Alternating Current (AC). In the conversion process, some energy is lost as heat. onsemi’s technology enables solar inverters – ranging from utility to residential – applications to be smaller, lighter, and more efficient, which minimizes energy loss and can reduce the overall system cost.
Original – onsemi
