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Data centers are currently responsible for more than two percent of global energy consumption. Fueled by AI, this number is expected to grow to up to around seven percent in 2030, matching the current energy consumption of India. Enabling efficient power conversion from grid-to-core is vital to enable superior power densities and thereby advance compute performance while reducing total cost of ownership (TCO).
Infineon Technologies AG is therefore launching the TDM2354xD and TDM2354xT dual-phase power modules with best-in-class power density for high-performance AI data centers. These modules enable true vertical power delivery (VPD) and offer industry’s best current density of 1.6 A/mm2. They follow the TDM2254xD dual-phase power modules introduced by Infineon earlier this year.
“We are proud to enable high-performance AI data centers with our TDM2354xT and TDM2354xD VPD modules. These devices will maximize system performance with Infineon’s trademark quality and robustness, thereby enabling best TCO for data centers,” said Rakesh Renganathan, Vice President Power ICs at Infineon Technologies. “Our industry-leading power devices and packaging technologies, combined with our extensive systems expertise, will further advance high-performance and green computing as part of our mission to drive digitalization and decarbonization.”
The TDM2354xD and TDM2354xT modules combine Infineon’s robust OptiMOS™ 6 trench technology, a chip-embedded package that enables superior power density through enhanced electrical and thermal efficiencies, and a new inductor technology to enable lower profile and therefore, true vertical power delivery.
As a result, the modules set new standards in power density and quality to maximize the compute performance and efficiency of AI data centers. The TDM2354xT modules support up to 160 A and are the industry’s first Trans-Inductor Voltage Regulator (TLVR) modules in a small 8 x 8 mm² form factor. Combined with Infineon’s XDP™ controllers, they offer extremely fast transient response and minimize on-board output capacitance by up to 50 percent, further increasing system power density.
The new modules will be showcased at Infineon’s global technology forum OktoberTech™ 2024 in Silicon Valley on 17 October and at electronica 2024 in Munich from November 12 to 14 (hall C3, booth 502).
Original – Infineon Technologies
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Navitas Semiconductor announced that its high-power GaNSafe family is now available in a TOLT (Transistor Outline Leaded Top-side cooling) package.
The GaNSafe family has been specifically created to serve demanding, high-power applications, such as AI data centers, solar/energy storage, and industrial markets. Navitas 4th generation integrates control, drive, sensing, and critical protection features that enable unprecedented reliability and robustness. GaNSafe is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin.
The TOLT packaging enhances thermal dissipation through the top side of the package, allowing heat to be dissipated directly to the heatsink (not through the PCBA). This enables the reduction of operating temperature and increases current capability, resulting in the highest level of system power density, efficiency, and reliability.
“With over 200 million units shipped and supplied with a 20-year warranty, Navitas’ highly integrated high-power GaNSafe ICs are proven to deliver performance and reliability while simplifying Design-IN for systems up to 22kW,” says Charles Bailley, Senior Director of Business Development. “As the most protected, reliable, and safe GaN devices in the industry, GaNSafe took our technology into mainstream applications above 1kW. Now, with the enhanced thermal dissipation of the TOLT package, we are enabling customers to deliver even better performance, efficiency, power density, and reliability in even the most demanding applications.”
Suitable for applications from 1 kW to 22 kW, 650 V GaNSafe in TOLT packaging is available with a range of RDS(ON)MAX from 25 to 98 mΩ. Integrated features and functions include:
- High-speed short-circuit protection, with autonomous ‘detect and protect’ with ultra-fast 350 ns / 50 ns latency.
- Protected, regulated, integrated gate-drive control, with zero gate-source loop inductance for reliable high-speed 2 MHz switching capability to maximize application power density.
- Electrostatic discharge (ESD) protection of 2 kV, compared to zero for discrete GaN transistors.
- 650 V continuous, and 800 V transient voltage capability for extraordinary application conditions.
- Integrated Miller Clamp (no negative gate bias, higher 3rd quadrant efficiency)
- Programmable turn-on and turn-off speeds (dV/dt) to simplify EMI regulatory requirements.
- Simple 4-pin device, allowing the package to be treated like a discrete GaN and requiring no additional VCC pin
- Robust, thermally enhanced packaging: ultra-low RQ_JUNC-AMB and board-level thermal cycling (BLTC) Reliability
In addition to the new ICs, Navitas will be offering reference design platforms based on GaNSafe TOLT for applications including data center power supplies and EV on-board chargers. These system platforms include complete design collateral with fully tested hardware, embedded software, schematics, bill-of-materials, layout, simulation, and hardware test results.
Original – Navitas Semiconductor
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Littelfuse, Inc. announced the SMFA Asymmetrical Series Surface-Mount TVS Diode, the first-to-market asymmetrical TVS solution specifically designed to protect Silicon Carbide (SiC) MOSFET gates from overvoltage events. As SiC MOSFETs become increasingly popular due to their faster switching speeds and superior efficiency compared to traditional Silicon MOSFETs and IGBTs, the need for robust gate protection has never been greater. The SMFA Asymmetrical Series offers an innovative, single-component solution that significantly enhances circuit reliability while simplifying design.
The SMFA Asymmetrical Series is the only TVS diode on the market engineered specifically for the unique gate protection requirements of SiC MOSFETs. Unlike traditional solutions that require multiple Zener or TVS diodes, the SMFA Series effectively protects against ringing and overshoot phenomena in gate drive circuits using a single component, saving valuable PCB space and reducing the complexity of circuit designs.
The SMFA Asymmetrical Series Surface-Mount TVS Diode offers the following key features and benefits:
- Asymmetrical Design: The SMFA Series is tailored to the specific negative and positive gate voltage ratings of SiC MOSFETs, ensuring precise and reliable protection.
- Single-Component Solution: Replaces multiple Zener and TVS diodes, reducing the number of components and simplifying circuit layout.
- Space Efficiency: By combining multiple protection functions into one component, the SMFA Series minimizes PCB space usage, allowing for more compact and efficient designs.
- Compatibility: The SMFA Asymmetrical Series is compatible with all available Littelfuse and other leading SiC MOSFETs, making it a versatile solution for various applications.
“The SMFA Asymmetric TVS Diodes protect valuable SiC MOSFETs from gate failures using a single component solution that easily replaces multiple Zener and TVS diodes,” said Ben Huang, Director of Product Marketing at Littelfuse. “This unique solution also saves valuable PCB space while reducing the number of components required.”
The SMFA Asymmetrical Series is ideal for a variety of demanding applications where SiC MOSFETs are used, including:
- AI / Data Center Server Power Supplies: Enhances the reliability and efficiency of critical power supplies in high-performance computing environments.
- High-Efficiency Electric Vehicle Infrastructure (EVI) Power Systems: Provides robust gate protection in EV charging stations and related power systems, ensuring longevity and performance.
- High-Reliability Semiconductor/Industrial Equipment Power Supplies: Protects essential power supplies in industrial and semiconductor manufacturing environments, where reliability and uptime are paramount.
Original – Littelfuse
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CISSOID announced that its SiC Inverter Control Module (ICM) has been adopted by Hydro Leduc, a renowned manufacturer of hydraulic components, for its new highly efficient and modular Electric Power Take-Off (ePTO). This new ePTO solution supports the electrification of trucks and other off-road vehicles. CISSOID’s ICM not only powers and controls Hydro Leduc’s compact and efficient inverter but also contributed to greatly accelerate its development cycle.
Hydro Leduc’s new ePTO solution offers an optimized hydraulic supply to high power tools in e-trucks and other off-road vehicles that remain driven by hydraulic actuators. Hydro Leduc’s new ePTO represents a significant advancement in electric and hydraulic transmissions with their ME230, a 76 kW brushless electric motor designed to be paired with an inverter for applications up to 650Vdc.
This motor, compatible with DIN ISO14 standards and equipped with an efficient cooling system, forms a complete solution with the new series of fixed displacement spherical piston pumps: the XRe, available in 41 or 63 cm³ displacements.
Specially adapted for E-PTO mounting, the XRe series is quiet and offers remarkable efficiency, reduced pulsations due to its 9-piston design, and high speed in self-priming mode. Together, the ME230 and XRe provide high-performance and efficient electro-hydraulic solutions for a variety of applications.
CISSOID’s ICM optimally integrates a 3-Phase 1200V/340A-550A SiC Power Module, enabling efficient power conversion, a gate driver board designed for safe driving of the fast-switching SiC transistors, and a control board embedding a powerful real-time microprocessor. This hardware platform has been delivered together with the OLEA® APP INVERTER software optimized for the efficient and safe control of electric motors.
Olivier Savinois, Managing Director at EL MOTION (the sister company of Hydro Leduc, specialized in the design and manufacturing of electrical components and motors), said “We have been very pleased to work with CISSOID on the development of our new ePTO inverter. Not only did their SiC Inverter Control Module completely match our needs, we also enjoyed outstanding support from their team. Especially due to the on-site calibration of our inverter and motor, during the design and validation phases. CISSOID’s modular inverter platform ties perfectly with our scalable ePTO solution.”
Emmanuel Poli, VP Sales at CISSOID, said: “It was really exciting to work with the Hydro Leduc team, who rapidly understood how powerful it would be to leverage our ICM to accelerate the design of their inverter. We were impressed by the speed and agility of Hydro Leduc’s engineers in integrating our hardware and software solution into their motor drive.”
Original – CISSOID
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PANJIT announced a strategic partnership with Chip One Stop, a renowned online distributor of electronic components. This collaboration is an important milestone in PANJIT’s ongoing initiative to strengthen its presence across Asia, particularly in the Japanese market. The partnership follows the establishment of PANJIT’s branch office in Tokyo, Japan, earlier this year, further affirming PANJIT’s commitment to solidifying its foothold in one of the world’s largest and most advanced electronics markets.
“We are honored to partner with Chip One Stop as our distributor, strengthening our presence in Japan and across Asia,” said Edgar Chen, COO of PANJIT. “Having opened our Tokyo office earlier this year, we are committed to deepening our roots in Japan. This collaboration aligns with our strategic goals to expand our market reach and deliver high-quality semiconductor solutions to a broader customer base. We believe that Chip One Stop’s expertise and extensive network will accelerate both of our growth, and we look forward to further collaboration and success together.”
Chip One Stop, known for its efficient e-commerce platform and competitive pricing, will serve as a key distributor for PANJIT’s products in the region. This partnership will provide customers with faster delivery times and an enhanced customer experience.
“We’re thrilled to announce the launch of partnership with PANJIT to help expansion of business with PANJIT especially in Japan and Asia markets,” said Susumu Nosoko, Director of Supplier Management at Chip One Stop. “Our e-commerce service provides faster delivery times and competitive pricing, and it strengthens the customer’s experience with this collaboration.”
By leveraging the combined strengths of PANJIT and Chip One Stop, the two companies aim to build an efficient distribution network in the Asia market that enhances customer satisfaction and expands their influence in the semiconductor industry, paving the way for future collaborations and innovations.
Original – PANJIT International
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Mitsubishi Electric Corporation announced that its Power Device Works’ Fukuyama Factory has begun large-scale supply of power semiconductor chips made from 12-inch silicon (Si) wafers for the assembly of semiconductor modules.
The advanced Si power-semiconductor modules will initially be used in consumer products. Going forward, Mitsubishi Electric expects to contribute to green transformation (GX) by providing a stable and timely supply of semiconductor chips to meet the growing demand for energy-saving power-electronics devices in various applications.
The Fukuyama Factory processes wafers for the production of Si power-semiconductors. The factory is playing a key role in Mitsubishi Electric’s medium-term plan to double its wafer processing capacity for Si power- semiconductors by fiscal 2026 compared to five years earlier. By supplying large quantities of 12-inch Si wafers for power semiconductor chips, the company will ensure stable production of advanced Si power-semiconductor modules for energy-saving power-electronics equipment.
Original – Mitsubishi Electric
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DENSO CORPORATION and ROHM Co., Ltd. announced that the two companies have agreed to start consideration of strategic partnership in the semiconductor field.
As the development and spread of electric vehicles accelerate toward the realization of carbon neutrality, the demand for electronic components and semiconductors required for electrification of vehicles is rapidly increasing. In addition, semiconductors are becoming increasingly important as products that support the intelligence of vehicles, such as automated driving and connectivity which are expected to contribute to eliminating fatalities in traffic accidents, and are essential to the realization of a sustainable society.
DENSO and ROHM have been working together through trade and development of semiconductors for automotive applications. Going forward, both companies will consider this partnership to achieve a stable supply of highly reliable products, as well as for various initiatives to develop high-quality and high-efficiency semiconductors that contribute to a sustainable society.
To further solidify the partnership, DENSO will acquire a portion of ROHM’s shares.
DENSO CORPORATION President & CEO, Shinnosuke Hayashi
DENSO positions semiconductors as key devices for realizing next-generation vehicle systems and we have deepened our cooperative relationships with semiconductor manufacturers who have abundant experience and knowledge. ROHM has a lineup of semiconductors in a wide range of areas important for automotive electronics, including analog semiconductors, power devices, and discrete semiconductors, and has extensive mass production experience. We believe that by integrating the automotive technologies and expertise we have cultivated over the years, we will be able to ensure a stable supply and accelerate technological development.
ROHM Co., Ltd. President (Representative Director), Isao Matsumoto
Global Tier 1 manufacturer DENSO and ROHM have been deepening collaboration for many years, and in recent years we have been working on joint development of analog semiconductors. We believe that the partnership with DENSO and the acquisition of shares by DENSO will further strengthen our cooperative relationship. To realize carbon neutrality, it is important to collaborate on technology at the device level with an eye toward end products and systems. We believe that we can contribute to the realization of a sustainable society by deepening our integration with DENSO, who has advanced system construction capabilities in the automotive and industrial equipment fields.
Original – DENSO
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Coherent Corp. announced the launch of its 200 mm silicon carbide epitaxial wafers. Substrate and epi-wafer shipments from the company at 350 micron and 500 micron thickness are now underway.
As a dedicated manufacturer of both SiC substrates and epitaxial wafers, Coherent combines these elements to deliver exceptional quality, performance, and reliability. The new 200 mm SiC epi-wafers are engineered with cutting-edge thickness and doping uniformity, setting new industry standards and supporting the production of superior SiC power semiconductors.
“With our advanced technology, we are not only enhancing the quality of SiC devices but also addressing the growing demand for 200 mm for efficient power-conversion components in critical sectors,” said Gary Ruland, Vice President and General Manager of the SiC Materials Business Unit.
SiC devices are integral to power conversion in electric and hybrid vehicles, energy infrastructure, and high-power EV chargers. The transition from 150 mm to 200 mm diameter wafers responds to the increasing demand for SiC semiconductors, allowing manufacturers to produce more devices per wafer. This shift is expected to enhance productivity and reduce the cost of SiC devices, benefiting a wide range of applications.
By adopting larger wafers, SiC device manufacturers can achieve higher yields and improved cost efficiency because of a 1.8x increase in usable area per wafer. The implementation of state-of-the-art 200 mm tooling brings additional advantages while aligning with the industry’s drive for greater performance and reduced operational costs.
Original – Coherent
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LATEST NEWS / PRODUCT & TECHNOLOGY / SiC / WBGAxus Technology Introduced Industry’s Lowest Cost of Ownership for CMP Processes on 200mm SiC Wafers
September 26, 2024
2 Min ReadAxus Technology, a leading global provider of chemical mechanical planarization (CMP) equipment, critical for semiconductor and compound semiconductor fabrication, announced its flagship CapstoneÆ CS200 platform tools offer the industry’s lowest cost of ownership (CoO) for CMP processes on 200mm silicon carbide (SiC) wafers. Compared to its closest competitor, Axus’s small-footprint Capstone delivers twice the throughput at less than half the total cost per wafer.
Yole Group forecasts the overall SiC manufacturing tool market to top US$4.4 billion by 2029. “The unique properties of SiC require specialized manufacturing tools and lines for processing power SiC devices,” the market analyst firm noted earlier this year. Axus anticipated this need, designing the state-of-the-art Capstone from the ground up to deliver advanced processing capabilities for SiC in power electronics and other applications.
“Many 200mm fabs are looking to upgrade their installed base of CMP tools to products with leading-edge capability and functionality. Our ability to deliver industry-low CoO further underscores our strong market position and capacity to support this shift,” said Axus Technology CEO Dan Trojan. “Capstone features a streamlined workflow and integrated cleaning capability, so it requires half the process steps of older CMP tools. This allows customers to greatly lower their capex investment.”
Key Capstone CoO advantages vs. competitor
- Throughput: 2.5x wafers per hour
- Power consumption: 60% lower
- DI water consumption: 80% lower
- Footprint: 45% smaller
- Capex cost per wafer: 65% lower
- Total cost per wafer: 50% lower
Another factor contributing to Capstone’s lower CoO is its built-in Process Temperature Control (PTC) technology, which enables processing at higher pressures and speeds without exceeding temperature limits of polishing pads and other sensitive components. This feature is vital for SiC and other materials with high hardness and planarization challenges that necessitate more aggressive process conditions.
Axus built its proprietary CoO model using its own system specifications, publicly available specs for competitive tools, actual consumables costs, and real-world performance data supplied by customers. The comprehensive model factors in all CoO contributors: process variables (polish time and removal rates), polishing and cleaning consumables, power and deionized (DI) water usage, system footprint, and equipment capex including cost, utilization and wafer capacity.
Original – Axus Technology
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Toshiba Electronics Europe GmbH enhances its silicon carbide (SiC) diode portfolio with ten new 1200V Schottky barrier diodes (SBDs). The TRSxxx120Hx series, comprising five products housed in TO-247-2L packages and five in TO-247 packages, helps designers improve the efficiency of industrial equipment, including photovoltaic (PV) inverters, electric vehicle (EV) charging stations, and switching power supplies.
By implementing an enhanced junction barrier Schottky (JBS) structure, the TRSxxx120Hx series allows a very low forward voltage (VF) of just 1.27V (typ.). The merged PiN-Schottky incorporated into a JBS structure reduces diode losses under high current conditions. The TRS40N120H of the new series accepts a forward DC current (IF(DC)) of 40A (max) and a non-repetitive peak forward surge current (IFSM) of 270A (max), with the maximum case temperature (TC) of all devices being +175°C.
Combined with the lower capacitive charge and leakage current, the products help improve system efficiency and simplify thermal design. For instance, at a reverse voltage (VR) of 1200V, the TRS20H120H diode housed in the TO-247-2L package provides a total capacitive charge (QC) of 109nC and reverse current (IR) of 2µA.
Original – Toshiba
