This book examines in detail how a semiconductor device is designed and fabricated to satisfy best the requirements of the target application. The author presents and explains both basic and state-of-art semiconductor industry standards used in large/small signal equivalent circuit models for semiconductor devices that electronics engineers routinely use in their design calculations. The presentation includes detailed, step-by-step information on how a semiconductor device is fabricated, and the very sophisticated supporting technologies used in the process flow.

Substantially expanded and updated, the new edition of this classic Principles of Power Electronics textbook provides unrivalled coverage of the fundamentals of power electronics. Comprehensive coverage of foundational concepts in circuits, magnetics, devices, dynamic models, and control establishes a strong conceptual framework for further study. New topics include SiC and GaN wide-bandgap materials, superjunction MOSFET and IGBT devices, advanced magnetics design, multi-level and switched-capacitor converters, RF converter circuits, and EMI.

This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field.

Whether you’re narrowly technical or don’t know silicon from silly putty, working directly in hardware technologies and want to know more, or simply a curious person seeking hard information about the technology that powers the modern world, Understanding Semiconductors will be an informative, dependable resource.

This book captures the author’s 35+ years of learning & experience in the semiconductor chip industry to provide a proven roadmap for successful, new product introduction process, tailored specifically to the semiconductor industry. The content includes a simplified process flow, success metrics, execution guidelines, checklists & calculators.

This textbook teaches the physics and technology of semiconductors, highlighting the strong interdependence between the engineering principles and underlying physical fundamentals. It focuses on conveying a basic understanding of the physics, materials, and processes involved in semiconductor technology without relying on detailed derivations. The book features separate comments on the key physical principles covered, allowing the reader to quickly grasp the take-home message.

This book focuses on the thermal reliability of power semiconductor device by looking at the failure mechanism, thermal parameters monitoring, junction temperature estimation, lifetime evaluation, and thermal management. Theoretical analysis and experimental tests are presented to explain existing reliability improvement techniques. This book is a valuable reference for the students and researchers who pay attention to the thermal reliability design of power semiconductor device.

Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles.

This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications.

Characterization of Wide Bandgap Power Semiconductor Devices presents comprehensive methods with examples for the characterization of this important class of power devices. The book covers pulsed static characterization; junction capacitance characterization; fundamentals of dynamic characterization; gate drive for dynamic characterization; layout design and parasitic management; protection design for double pulse test; measurement and data processing for dynamic characterization; cross-talk consideration; impact of three-phase system; and topology considerations.

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.

This book addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration.

This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed.

This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.

SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems.  In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field.  Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications.

Silicon carbide is the only wide band gap semiconductor that has a native oxide, and a leading candidate for development of next-generation, energy efficient, high power metal-oxide-semiconductor field effect transistors (MOSFETs). Progress in this technology has been limited by the semiconductor-dielectric interface structure and its effect on the inversion layer mobility. The major objective of this work is to study and improve 4H-SiC MOSFET interface structure, defect states and inversion layer mobility on the (11-20) crystal face of SiC (a-face), employing nitrogen and phosphorous passivation.

The book contains a summary of knowledge of power semiconductor structures. It presents a short historic introduction as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors. The book deals with diode structures as well. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures.

This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analysed using basic semiconductor physics equations that govern their behaviour.

This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modelling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms.

Semiconductor Modeling: For Simulating Signal, Power, and Electromagnetic Integrity gives designers and engineers a broad view of using semiconductor models to design high-speed circuit boards. Most issues in the field of designing high-frequency circuits, from the beginning of modeling and simulation using EDA tools to future trends, are discussed and integrated.