This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications.

Characterization of Wide Bandgap Power Semiconductor Devices presents comprehensive methods with examples for the characterization of this important class of power devices. The book covers pulsed static characterization; junction capacitance characterization; fundamentals of dynamic characterization; gate drive for dynamic characterization; layout design and parasitic management; protection design for double pulse test; measurement and data processing for dynamic characterization; cross-talk consideration; impact of three-phase system; and topology considerations.

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.

This book addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration.

This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed.

This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.

SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems.  In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field.  Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications.

The latest spice simulation and design tools for creating state-of-the-art switching power supplies. Fully updated to incorporate new SPICE features and capabilities, this practical guide explains, step by step, how to simulate, test, and improve switch-mode power supply designs. Detailed formulas with founding equations are included. Based on the author's continued research and in-depth, hands-on work in the field, this revised resource offers a collection of the latest SPICE solutions to the most difficult problem facing power supply designers: creating smaller, more heat-efficient power supplies in shorter design cycles.

Silicon carbide is the only wide band gap semiconductor that has a native oxide, and a leading candidate for development of next-generation, energy efficient, high power metal-oxide-semiconductor field effect transistors (MOSFETs). Progress in this technology has been limited by the semiconductor-dielectric interface structure and its effect on the inversion layer mobility. The major objective of this work is to study and improve 4H-SiC MOSFET interface structure, defect states and inversion layer mobility on the (11-20) crystal face of SiC (a-face), employing nitrogen and phosphorous passivation.

The book contains a summary of knowledge of power semiconductor structures. It presents a short historic introduction as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors. The book deals with diode structures as well. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures.

This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analysed using basic semiconductor physics equations that govern their behaviour.

This book provides useful information for beginner engineers and students who want to know what semiconductors are. From the essence of physical properties, this manga guide explains the basics of circuit design.

This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modelling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms.

Semiconductor Modeling: For Simulating Signal, Power, and Electromagnetic Integrity gives designers and engineers a broad view of using semiconductor models to design high-speed circuit boards. Most issues in the field of designing high-frequency circuits, from the beginning of modeling and simulation using EDA tools to future trends, are discussed and integrated.

Explaining the physics and characteristics of power semiconductor devices, this book presents an overview of various classes of power semiconductors. It provides insight into how they work and the characteristics of the various components from the viewpoint of the user, going through all modern power semiconductor device types. The physics are explained in reasonable detail, providing the precise amount of information needed to fully understand the component's behavior in the application. Exploring the specific strengths and weaknesses of each device type, the book demonstrates how these devices fit into the system and how they will behave there.

Designing and building power semiconductor modules requires a broad, interdisciplinary base of knowledge and experience, ranging from semiconductor materials and technologies, thermal management, and soldering to environmental constraints, inspection techniques, and statistical process control. This diversity poses a significant challenge to engineers, and a book that brings together the essential elements of these technologies is long overdue. Power Electronic Modules: Design and Manufacture fills that void.

Offering step-by-step, in-depth coverage, the new Third Edition of Power Electronics: Converters, Applications, and Design provides a cohesive presentation of power electronics fundamentals for applications and design in the power range of 500 kW or less. The text describes a variety of practical and emerging power electronic converters made feasible by the new generation of power semiconductor devices.

Recent advances in robotics, automatic control and power conditioning systems have prompted research into increasingly sophisticated power semiconductor devices. This cutting-edge text explores the design, physical processes and applications performance of current power semiconductor devices. The extensive scope covers the complete range of discrete and integrated devices now available.

This comprehensive guide to the design of electric motor drives and speed and position control systems provides an analysis of the steady-state operation of drive systems that permit the specification of suitable converters and machines for the AC or DC system envisioned. Includes some coverage of transient operation.