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Toyoda Gosei’s technology to enhance GaN substrates has been verified to improve power device performance. An article confirming it was published in Physica Status Solidi (RRL) – Rapid Research Letters, an international scientific journal for solid state physics.
Better power devices are indispensable for CO2 reduction in society, as they regulate electric power everywhere. Switching material from silicon to gallium nitride enables 90% energy-saving, superior devices, for which mass production of larger quality GaN substrates is requisite.
The Japanese Ministry of the Environment is leading a project for broad application of GaN power devices, for which Toyoda Gosei is providing technology to obtain ideal GaN crystals. One outcome of the project is a demonstrable improvement in power device performance with a GaN substrate fabricated on a GaN seed crystal that Toyoda Gosei jointly developed with Osaka University. Compared to power devices made on commercially-available substrates, power devices using these GaN substrates show higher performance in both power regulation capacity and yield ratio.
Toyoda Gosei will continue collaborating with government, universities, and other corporations for earlier dissemination of large quality GaN substrates.
Original – Toyoda Gosei
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Aehr Test Systems has received an initial production order from a top tier automotive semiconductor supplier for a FOX-XP™ wafer level test and burn-in system with fully integrated FOX WaferPak™ Aligner for production test of their gallium nitride (GaN) power semiconductor devices. The FOX-XP system with integrated WaferPak Aligner is scheduled to ship immediately.
Gayn Erickson, President and CEO of Aehr Test Systems, commented, “We have been working closely with this customer for over a year to support their evaluation and qualification process for delivering GaN power semiconductor devices to their customers. We are thrilled to receive this initial production purchase order, signaling their commitment to move forward with volume production wafer level burn-in of their GaN devices on our FOX-XP platform.
“This customer has extensively utilized a FOX-NP system under an evaluation agreement for production qualification and reliability testing of their devices over the past year. As part of the evaluation, they purchased a significant number of our proprietary WaferPak full wafer Contactors to successfully qualify a wide range of GaN device types designed for multiple end use applications including industrial, solar, data center, and automotive markets.
“Our FOX-P platform allows customers using the FOX-NP for device qualification and reliability testing of power semiconductors like GaN and silicon carbide (SiC) to transition seamlessly to the FOX-XP multi-wafer fully automated system, which is capable of testing up to nine wafers in parallel and is specifically designed to handle high-voltage testing and high temperature Gate and Drain stress test requirements. By leveraging our FOX-XP system and our proprietary WaferPak full wafer Contactors, customers can easily test wafers of varying sizes from 6 to 12 inches by simply purchasing new WaferPaks, while utilizing the same FOX-XP system and FOX WaferPak Aligner.
“Like SiC, GaN semiconductor MOSFETs are wide bandgap devices that offer significantly higher power conversion efficiency than silicon. GaN is particularly well suited for lower power applications such as sub-1000-watt power converters (fast chargers) used in consumer electronics like cell phones, tablets, and laptops. Additionally, it is increasingly being adopted for automotive power converters, supporting electrical systems in both electric and traditional gasoline-powered cars, as well as being targeted at data center power applications where power efficiency and delivery are critical to support the massive amount of computing power and data storage being installed over the next decade. Along with the increased usage in automotive and data centers, many industry experts and analysts predict that GaN MOSFETs will eventually replace silicon as the preferred technology for power conversion in photovoltaic (solar panel) applications.
“We view GaN as a transformative and rapidly growing technology in the power semiconductor market. With an anticipated compound annual growth rate of more than 40%, the GaN market is projected to reach $2.5 billion in annual device sales by 2029 according to Yole Group’s Power SiC/GaN Compound Semiconductor Market Monitor. In addition, Frost & Sullivan estimates GaN semiconductors will account for over 10% of the worldwide power semiconductor industry by the year 2028. This represents a significant growth opportunity for Aehr’s wafer level test and burn-in solutions.”
The FOX-XP and FOX-NP systems, available with multiple WaferPak Contactors (full wafer test) or multiple DiePakTM Carriers (singulated die/module test) configurations, are capable of functional test and burn-in/cycling of devices such as silicon carbide and gallium nitride power semiconductors, artificial intelligence processors, silicon photonics as well as other optical devices, 2D and 3D sensors, flash memories, magnetic sensors, microcontrollers, and other leading-edge ICs in either wafer form factor, before they are assembled into single or multi-die stacked packages, or in singulated die or module form factor.
Original – Aehr Test Systems
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ROHM and TSMC have entered a strategic partnership on development and volume production of gallium nitride (GaN) power devices for electric vehicle applications.
The partnership will integrate ROHM’s device development technology with TSMC’s industry-leading GaN-on-silicon process technology to meet the growing demand for superior high-voltage and high-frequency properties over silicon for power devices.
GaN power devices are currently used in consumer and industrial applications such as AC adapters and server power supplies. TSMC, a leader in sustainability and green manufacturing, supports GaN technology for its potential environmental benefits in automotive applications, such as on-board chargers and inverters for electric vehicles (EVs).
The partnership builds on ROHM and TSMC’s history of collaboration in GaN power devices. In 2023, ROHM adopted TSMC’s 650V GaN high-electron mobility transistors (HEMT), whose process is increasingly being used in consumer and industrial devices as part of ROHM’s EcoGaN™ series, including the 45W AC adapter (fast charger) “C4 Duo” produced by Innergie, a brand of Delta Electronics, Inc.
“GaN devices, capable of high-frequency operation, are highly anticipated for their contribution to miniaturization and energy savings, which can help achieve a decarbonized society. Reliable partners are crucial for implementing these innovations in society, and we are pleased to collaborate with TSMC, which possesses world-leading advanced manufacturing technology” said Katsumi Azuma, Member of the Board and Senior Managing Executive Officer at ROHM. “In addition to this partnership, by providing user-friendly GaN solutions that include control ICs to maximize GaN performance, we aim to promote the adoption of GaN in the automotive industry.”
“As we move forward with the next generations of our GaN process technology, TSMC and ROHM are extending our partnership to the development and production of GaN power devices for automotive applications,” said Chien-Hsin Lee, Senior Director of Specialty Technology Business Development at TSMC. “By combining TSMC’s expertise in semiconductor manufacturing with ROHM’s proficiency in power device design, we strive to push the boundaries of GaN technology and its implementation for EVs.”
Original – ROHM
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VisIC Technologies announced a new partnership aimed at advancing high-efficiency GaN inverter technology for the EV market. This collaboration will provide automotive OEMs with power semiconductors that exceed silicon carbide (SiC) performance, while offering lower costs at device and system level.
In a recent test conducted at AVL’s state-of-the-art facilities in Germany, an inverter based on VisIC’s GaN-on-Silicon D³GaN components proved an outstanding performance. Mounted on AVL’s e-motor test bench and controlled by AVLs SOP eDrive controls algorithm, the system achieved a benchmark efficiency level of 99.67% at 10kHz, stunningly climbing to over 99.8% efficiency at 5kHz — which outperforms comparable SiC inverters by up to 0.5% and is cutting energy losses by more than 60%.
This breakthrough positions the AVL and VisIC partnership as a compelling option for automakers striving to balance high efficiency with affordability in EV design. It is worth noting that VisIC’s GaN-on-Silicon power devices require significantly less energy and therefore CO2 during the chip production process compared to SiC. They can be produced in widespread 200mm and 300mm silicon foundries, which makes scaling production a straightforward process.
“With AVL, we’re making cutting-edge GaN inverter technology accessible for even more electric vehicles, establishing a new benchmark for efficiency and cost-effectiveness in the industry,” said Gregory Bunin, CTO of VisIC Technologies. “Our partnership reflects a shared commitment to driving EV innovation that’s both impactful and accessible, bringing GaN’s unparalleled performance to a broader market.”
“Working with VisICs new GaN power module for high-power systems enables us to offer our customers cutting-edge solutions that are optimally aligned with the requirements of next-generation drive systems. These include, among other things, high power density combined with reduced overall system costs,” added Dr. Thomas Frey, Head of Segment E-Mobility & E-Drive System at AVL Software and Functions GmbH. “Together, we can significantly advance e-mobility and help reduce the carbon footprint.”
Looking ahead, AVL and VisIC plan to expand their GaN-on-Si platform to include 800V GaN power modules, ensuring that their technology remains scalable and adaptable to the needs of the growing BEV market. This collaboration places AVL and VisIC Technologies at the forefront of GaN inverter technology, establishing new standards for energy efficiency and performance across the EV industry.
Original – VisIC Technologies
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Cambridge GaN Devices (CGD) and IFP Energies nouvelles (IFPEN), a major French public research and training organization in the fields of energy, transport and the environment, have developed a demo which confirms the suitability of CGD’s ICeGaN®650 V GaN ICs in a multi-level, 800 VDC inverter.
The demo delivers super-high power density – 30 kW/l – which is greater than can be achieved by more expensive, state-of-the-art silicon-carbide (SiC)-based devices. The inverter realization also demonstrates the ease of paralleling that ICeGaN technology enables; each inverter node has three 25mΩ / 650V ICeGaN ICs – 36 devices in total – in parallel.
ANDREA BRICCONI | CHIEF MARKETING OFFICER, CGD
“We are super excited at this first result of our partnership with IFPEN. 800 VDC supports the 800 V bus which is being increasingly adopted by the EV industry. By addressing automotive and other high voltage inverter applications with energy-efficient ICeGaN-based solutions we are delivering on CGD’s key commitment – sustainability.”This multi-level GaN Inverters can power electric motors to over 100 kW peak, 75 kW continuous power. The CGD/IFPEN demo features: a high voltage input of up to 800Vdc; 3-phase output; a peak current of 125 Arms (10s) (180 Apk); and a continuous current of 85 Arms continuous (120 Apk).
The ICeGaN multi-level design proposed by IFPEN reveals several compelling benefits:
- Increased Efficiency: the improvement in the efficiency of the traction inverter leads to an increase in battery range and a reduction in charging cycles. It also leads to a reduction in battery cost if the initial range (iso-range) is maintained
- Higher switching frequencies: GaN transistors can operate at much higher frequencies than silicon transistors. This reduces iron losses in the motor, particularly in the case of machines with low inductances
- Reduced Electromagnetic Interferences: 3-level topology minimizes EMI and enhances the reliability of the system
- Enhanced thermal management: insulated metallized substrate boards featuring an aluminium core facilitate superior thermal dissipation, ensuring optimal operating temperatures and extending the lifespan of the system and associated GaN devices
- Modular design: this facilitates scalability and adaptability for varying system requirements.
GAETANO DE PAOLA | PROGRAM MANAGER, IFPEN
“Following the implementation of this inverter reference using CGD’s enabling ICeGaN ICs coupled with innovative topologies, such as multi-level solutions, IFPEN now strongly believes that GaN is a breakthrough technology in terms of performance and cost for high-voltage traction inverters.”Original – Cambridge GaN Devices
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Cambridge GaN Devices (CGD) and Qorvo® have partnered to bring together industry-leading motor control and power efficiency technologies in the PAC5556A + ICeGaN® evaluation kit (EVK). This collaboration combines Qorvo’s high-performance BLDC/PMSM motor controller/driver and CGD’s easy-to-use ICeGaN ICs in a board that significantly improves motor control applications.
ANDREA BRICCONI | CHIEF MARKETING OFFICER, CGD
“By combining industry-leading solutions from our two technology-strong companies in this EVK, we are enabling the development of compact, energy-efficient systems with high power density. Unlike other GaN implementations, ICeGaN technology easily interfaces with Qorvo’s PAC5556A motor control IC for seamless high performance in BLDC and PMSM applications.”JEFF STRANG | GENERAL MANAGER, POWER MANAGEMENT BUSINESS UNIT, QORVO
“Wide-bandgap semiconductors like GaN and SiC are being integrated into motor control applications for the power density and efficiency advantages they offer. CGD’s ICeGaN technology delivers ease of use and reliability – two critical factors for motor control and drive designers. Customers are responding enthusiastically when they experience the power of GaN combined with our highly integrated PAC5556A 600V BLDC motor control solution.”By employing CGD’s latest-generation P2 ICs, the PAC5556AEVK2 evaluation kit with 240 mΩ ICeGaN achieves up to 400W peak performance without a heatsink, whilst the PAC5556AEVK3 with 55 mΩ ICeGaN hits 800W peak with minimal airflow cooling.
ICeGaN’s efficiency gains result in reduced power loss, increased power availability, and minimized heat dissipation, enabling smaller and more reliable systems. Because ICeGaN integrates essential current sense and Miller clamp elements, gate driver design is simplified and BOM costs are reduced. This makes the solution easy to implement and price-competitive, as well as high performance.
The PAC5556A + CGD GaN EVKs offer higher torque at low speeds and precise control, making them ideal for white goods, ceiling fans, refrigerators, compressors and pumps. Target markets include industrial and home automation, especially where compact, high-efficiency motor control systems are required. PAC5556AEVK2 and PAC5556AEVK3 are now available to order at Qorvo’s website.
Original – Cambridge GaN Devices
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Efficient Power Conversion (EPC) announced that the Full Commission of the U.S. International Trade Commission (ITC) has affirmed the ITC’s initial determination that Innoscience infringed EPC’s foundational patent for GaN technology, which is core to applications involving artificial intelligence, satellites, rapid chargers, humanoid robots, and autonomous driving, among others. The decision imposes a ban on Innoscience (Zhuhai) Technology Co., Ltd. and its affiliates (Innoscience) from importing GaN-related products into the United States without a license from EPC.
This milestone decision marks the first successfully litigated U.S. patent dispute involving GaN-based wide bandgap semiconductors and solidifies EPC’s position as a leading developer of these next-generation devices, which are significantly more efficient, faster, and smaller than traditional, silicon-based technology. The decision also paves the way for EPC to expand access to its IP through licensing agreements with potential partners and customers around the world.
“After pouring nearly two decades and immense resources into developing our uniquely valuable intellectual property portfolio, this is a tremendous victory for EPC and a major win for fair competition globally, which is critical to the success of next-generation technological advances. We are grateful to the ITC for their diligent work in recognizing the validity of our patents and Innoscience’s infringement,” said Alex Lidow, CEO and Co-Founder of EPC. “EPC will continue to vigorously defend our IP against unfair use to ensure that we can continue to innovate and provide our customers with the cutting-edge technologies needed to help power our future.”
The ITC’s most recent decision is the fourth time that EPC’s IP rights have been affirmed against Innoscience in the past six months. EPC initially filed the infringement claim against Innoscience in the ITC in May 2023. In response, Innoscience challenged the validity of the EPC patents at issue in the U.S., as well as EPC’s counterpart patents in China.
The China National Intellectual Property Administration upheld the validity of EPC’s counterpart patents in April and May 2024. The ITC’s initial determination in July 2024 similarly confirmed the validity of the challenged patents, and also found that Innoscience infringed EPC’s foundational patent, U.S. Patent No. 8,350,294. The ITC’s final determination is subject to a 60-day Presidential review period, expiring on January 6, 2025.
Original – Efficient Power Conversion
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Navitas Semiconductor has announced the world’s first 8.5 kW power supply unit (PSU), powered by GaN and SiC technologies to achieve 98% efficiency, for next-generation AI and hyperscale data centers.
The AI-optimized 54V output PSU complies with Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications and utilizes high-power GaNSafe and Gen-3 Fast SiC MOSFETs configured in 3-phase interleaved PFC and LLC topologies, to ensure the highest efficiency and performance, with lowest component count. The PSU’s shift to a 3-phase topology for both the PFC and LLC (vs. 2-phase topologies used by competing PSUs) enables the industry’s lowest ripple current and EMI.
Furthermore, the PSU reduces the number of GaN and SiC devices by 25% compared with the nearest competing system, which reduces the overall cost. The PSU has an input voltage range of 180 to 264 Vac, a standby output voltage of 12 V, and an operating temperature range of -5oC to 45oC. Its hold-up time at 8.5 kW is 10 ms, with 20 ms possible through an extender.
The 3-Phase LLC topology is enabled by high-power GaNSafe, which is specifically created for demanding, high-power applications, such as AI data centers and industrial markets. Navitas’ 4th generation integrates control, drive, sensing, and critical protection features that enable unprecedented reliability and robustness. GaNSafe is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin. Suitable for applications from 1 kW to 22 kW, 650 V GaNSafe in TOLL and TOLT packages are available with a range of RDS(ON)MAX from 25 to 98 mΩ.
The 3-Phase interleaved CCM TP-PFC is powered by Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology, which has been enabled by over 20 years of SiC innovation leadership and offers world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster charging EVs and up to 3x more powerful AI data centers.
“This complete wide bandgap solution of GaN and SiC enables the continuation of Navitas’ AI power roadmap which enables this 8.5kW and plans to drive to 12kW & higher in the near-term”, said Gene Sheridan, CEO and co-founder of Navitas. “As many as 95% of the world’s data centers cannot support the power demands of servers running NVIDIA’s latest Blackwell GPUs, highlighting a readiness gap in the ecosystem. This PSU design directly addresses these challenges for AI and hyperscale data centers.”
The PSU will be on display for the first time at Electronica 2024 (Hall C 3, booth 129, November 12th– 15th).
Original – Navitas Semiconductor
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EPC Space announced the launch of HEMTKY product line.
A HEMTKY is a HEMT, High Electron Mobility Transistor, with an embedded Schottky diode. The presence of an antiparallel Schottky diode in the HEMTKY structure minimizes third quadrant conduction losses absent GaN HEMT synchronous drive. Notable advantages are:
- Predictable conduction losses, no reverse recovery charge
- Reduced system sensitivity to half-bridge deadtime variance
- Reduced negative voltage stress on gate drivers
For 500-unit quantities, engineering models are priced at $212 USD each, while space level units are priced at $315 USD each.
EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments. Radiation hardened GaN-based power devices address critical spaceborne environments for applications such as power supplies, motor drives, ion thrusters, and more. eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Original – EPC Space
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Cambridge GaN Devices (CGD) will exhibit at Electronica which runs from November 12-15, 2024 at the Messe München, Munich, Germany. This will be the second time that the company has exhibited at the world’s leading trade fair and conference for electronics, marking the company’s position as a leader in delivering gallium-nitride power ICs which are easy to use and very reliable.
ANDREA BRICCONI | CHIEF MARKETING OFFICER, CGD
“Since our first appearance at Electronica, CGD has made remarkable steps. We have introduced our P2 series ICeGaN® ICs that feature RDS(on) levels down to 25 mΩ, supporting multi kW power levels with the highest efficiency. We have announced a deal with TSMC, the leading IC fabrication house in the world which ensures quality and supply of our innovative power devices. Also, studies by leading academic research establishment, Virginia Tech University, have demonstrated that our ICeGaN GaN technology is more reliable and robust than other GaN platforms. GaN is now available for use at higher power levels, and at Electronica we are expecting to meet with designers who are eager to take advantage of the efficiency and power density benefits that GaN can bring to their latest designs.”During the show, CGD will make two presentations:
- November 12, 13:20 – 14:10, Booth A5.351: SiC & GaN Technologies – Exploring Advancements, Addressing Challenges CGD’s CTO and co-founder, Professor Florin Udrea will join a panel of GaN experts for a Panel Discussion moderated by Maurizio Di Paolo Emilio, Editor-in-Chief, Power Electronics News.
- November 12, 16:10-16:35, Power Electronics Forum: ICeGaN as a smart high voltage platform for high power industrial and automotive applications presented by Professor Florin Udrea.
The power devices field has undergone significant change due to the emergence of Wide Band Gap semiconductors, particularly Gallium Nitride (GaN) and Silicon Carbide (SiC). Traditionally, GaN has been used for lower power consumer applications (e.g., power supplies), while SiC dominated the medium to high power markets, such as industrial (e.g., motor drives) and automotive applications (e.g., traction inverters).
SiC’s superior scaling of on-state resistance at high voltages gives it an edge above 1.2 kV, but GaN is now competing with SiC at 650V for all power levels. ICeGaN®, featuring sensing and protection functions, surpasses discrete SiC in terms of robustness and ease of paralleling, offering notable advantages for 650V high-power applications. Additionally, with the rise of multi-level topologies for traction inverters, GaN may challenge SiC’s 1.2 kV market. Ultimately, both technologies have a bright future, with overlap expected in high-power (10-500 kW) applications.
At Electronica, CGD will show a number of demos that employ ICeGaN, including:
- 3 kW totem-pole PFC evaluation board;
- High and low power QORVO motor drive evaluation kits developed in collaboration with CGD and utilising ICeGaN
- Half-bridge and full-bridge evaluation boards, plus an ICeGaN in parallel evaluation board;
- Single leg of a 3-phase 800 V automotive inverter demo board, developed in partnership with French public R&I institute, IFP Energies nouvelles (IFPEN);
- ICeGaN vs discrete GaN circuits comparison in half bridge (daughter cards) demo board.
- High-density USB-PD adaptor developed with Industrial Technology Research Institute (ITRI) of Taiwan
Original – Cambridge GaN Devices
