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EPC Space announced the introduction of two new rad-hard GaN transistors with ultra-low on-resistance and high current capability for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET. These devices come packaged in hermetic packages in very small footprints.
The EPC7020G is a 200 V, 14.5 mΩ, 200 Apulsed radiation-hardened gallium nitride transistor and the EPC7030G is a 300 V, 32 mΩ, 200 Apulsed radiation-hardened gallium nitride transistor. These devices join the 40 V, 4.5 mΩ EPC7019G and the 100 V, 4.5 mΩ EPC7018G to cover applications including power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, and deep space probes. This product family comes packaged in a compact hermetic package in a footprint less than 45 mm2.
Part Number Drain to Source Voltage (VDS) Drain to Source Resistance (RDS(on)) Single-Pulse Drain Current (IDM) EPC7019G 40 V 4 mΩ 530 A EPC7018G 100 V 6 mΩ 345 A EPC7020G 200 V 14.5 mΩ 200 A EPC7030G 300 V 32 mΩ 200 A With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.
“The G-Package family offers the lowest on-resistance of any packaged rad hard transistor currently on the market,” said Bel Lazar, CEO of EPC Space. “These devices offer mission-critical components with superior figure of merit, significantly smaller size, and lower cost for the space and other high-reliability markets than alternative rad hard silicon solutions”.
Original – EPC Space
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Navitas Semiconductor will reveal a new, high-performance wide bandgap power platform as part of its display at one of Asia’s most prestigious electronics exhibitions – sponsored by Navitas – SEMICON Taiwan 2023, from September 6th-8th.
Visitors will discover the latest gallium nitride (GaN) GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions.
Additionally, Navitas will showcase cutting-edge, power-system platforms to dramatically accelerate customer developments, minimize time-to-market, and set new industry benchmarks in energy efficiency, power density and system cost. These system platforms include complete design collateral with fully-tested hardware, embedded software, schematics, bill-of-materials, layout, simulation and hardware test results. Examples include:
- Navitas’ CRPS185 data center power platform, that delivers a full 3,200 W of power in only 1U (40 mm) x 73.5mm x 185 mm (544 cc), achieving 5.9 W/cc, or almost 100 W/in3 power density. This is a 40% size reduction vs, the equivalent legacy silicon approach and reaches over 96.5% efficiency at 30% load, and over 96% stretching from 20% to 60% load, creating a ‘Titanium Plus’ benchmark.
- Navitas’ 6.6 kW 3-in-1 bi-directional EV on-board charger (OBC) with 3 kW DC-DC. This 96%+ efficient unit has over 50% higher power density, and with efficiency over 95%, delivers up to 16% energy savings as compared to competing solutions.
As part of SEMICON’s Power and Opto Semiconductor Forum, Navitas’ Charles Bailley, Senior Director of Business Development, will present “GaN Power ICs Increase Power Density in EV Power Systems”. The presentation is at 2pm, on September 6th, in room 402, 4F, TaiNEX 1.
“Breakthrough high efficiency, high reliability, and high power density – all from the new GaN power IC platform,” said Kevin 汪時民 Wang, Manager of Navitas Taiwan. “The new platform announcement matches SEMICON’s theme of ‘Innovating the World through Semiconductors’ and our own mission to ‘Electrify Our World™’.”
Original – Navitas Semiconductor
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Transphorm, Inc. announced that its GaN platform powers the world’s first integrated photovoltaic (PV) systems from DAH Solar Co., Ltd. (Anhui Daheng New Energy Technology Co., LTD/subsidiary of DAH Solar). The PV systems are used in DAH Solar’s new SolarUnit product line. DAH Solar credits Transphorm’s GaN FETs with enabling it to produce smaller, lighter, and more reliable solar panel systems that also offer higher overall power generation with lower energy consumption.
The design achievements continue to demonstrate Transphorm’s One Core GaN Platform, Crossing the Power Spectrum leadership position by solidifying its value proposition in the renewables market, which currently represent a GaN TAM of more than $500M.
DAH Solar uses Transphorm’s 150 mΩ and 70 mΩ GaN FETs in the SolarUnits’ design architecture (both DC-to-DC and DC-to-AC power stages). The SolarUnits are available in three models with power outputs of 800 W, 920 W, or 1500 W and peak efficiencies of 97.16%, 97.2%, and 97.55% respectively. The GaN devices deliver higher switching frequencies and power density versus incumbent silicon solutions. Notably, the two FETs are available in PQFN88 performance packages that pair with commonly-used gate drivers—features that helped DAH Solar quicken its design time.
“We have a strong legacy of producing innovative PV products. As such, we consistently look for ways to advance our products with state-of-the-art technologies to create a better, more efficient end user experience,” said Yong Gu, GM, DAH Solar. “We view Transphorm as an authority in the field of GaN production and found their advanced GaN FETs to be the optimal devices for our new SolarUnit line. The devices are easy to design in and offer performance advantages that enable us to continue building on our legacy.”
Transphorm today supports the largest range of power conversion requirements (45 W to 10+ kW) across the widest range of power applications. The company’s FET portfolio includes 650 V and 900 V devices with 1200 V devices in development. These FETs are JEDEC and AEC-Q101 qualified, making them optimal solutions for power adapters and computer PSUs through to broad industrial UPSs and electric vehicle mobility systems.
The company’s technology innovations continue to set new benchmarks across the GaN power semiconductor industry. In parallel, they help customers bring to market new, disruptive applications in their own markets—such as DAH Solar’s PV systems.
These achievements are due to Transphorm’s normally-off SuperGaN® platform, which uses the cascode d-mode configuration to harness GaN’s intrinsic advantages. The superior physics of this high performance GaN platform design delivers competitively unmatched benefits such as easier drivability, easier designability, higher reliability, and greater manufacturability.
“The value Transphorm’s GaN platform brings to a variety of applications continues to be demonstrated by market leaders like DAH Solar,” Kenny Yim, Vice President of Asia Sales, Transphorm. “Solar inverters as well as other high-power applications require highly reliable, high performing power semiconductors that can withstand decades of operation in harsh environments.
Using Transphorm’s SuperGaN technology helps reduce power loss thereby minimizing thermal stress on other designed-in components. That’s a phenomenal achievement over alternative GaN and Silicon solutions underscoring the benefits our GaN brings to next generation power systems.”
Original – Transphorm
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Transphorm, Inc. announced it has demonstrated up to 5 microsecond short circuit withstand time (SCWT) on a GaN power transistor with a patented technology. The achievement is the first of its kind on record, marking an important milestone for the industry as a whole. It proves Transphorm GaN’s ability to meet the required short circuit capabilities of rugged power inverters such as servo motors, industrial motors, and automotive powertrains served traditionally by silicon IGBTs or silicon carbide (SiC) MOSFETs— an over $3 billion GaN TAM over the next 5 years.
The demonstration was developed with support from Yaskawa Electric Corporation, a long-term strategic partner of Transphorm’s and a global leader in low and medium voltage drives, servo systems, machine controllers, and industrial robots. This makes GaN a highly attractive power conversion technology for servo systems, as it allows for higher efficiency and reduced size compared to incumbent solutions.
To do that, GaN must pass stringent robustness tests—of which, short-circuit survivability is the most challenging. In case of short-circuit faults, the device must survive extreme conditions with both high current and high voltage. The system can take up to a few microseconds to detect the fault and shut down the operations. During this time, the device must withstand the fault on its own.
“If a power semiconductor device cannot survive short-circuit events, the system itself may fail. There was a strong perception that GaN power transistors could not meet the short circuit requirements needed for heavy-duty power applications such as ours,” said Motoshige Maeda, Department Manager of Fundamental R&D Management Department, Corporate Technology Division, Yaskawa. “Having worked with Transphorm for many years, we believed that perception to be unfounded and have been proven right today. We’re excited about what their team has accomplished and look forward to demonstrating how this new GaN feature can benefit our designs.”
The short-circuit technology has been demonstrated on a newly designed 15 mΩ 650 V GaN device. Notably, that device reaches a peak efficiency of 99.2% and a maximum power of 12 kW in hard-switching conditions at 50 kHz. The device demonstrated not only performance, but also reliability, passing high-temperature high-voltage stress requirements.
“Standard GaN devices can withstand short-circuit for only a few hundredths of nanoseconds, which is too short for fault detection and safe shut-down. However, with our cascode architecture and key patented technology, we were able to demonstrate short-circuit withstand time up to 5 microseconds with no additional external components, thus retaining low cost and high performance,” said Umesh Mishra, CTO and Co-Founder, Transphorm.
“We understand the demands of high-power, high-performance inverter systems. We have a long history of strong innovation, and we’re proud to say that experience helped us bring GaN to the next level. This is yet another validation of Transphorm’s global leadership in high voltage GaN robustness and reliability and will be a gamechanger for GaN in motor drives and other high-power systems.”
The full description explaining the SCWT achievement, the demonstration analysis, and more is expected to be presented at a major power electronics conference next year.
Original – Transphorm
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Navitas Semiconductor announced that its CRPS185 3,200 W “Titanium Plus” server reference design not only surpasses the stringent 80Plus Titanium efficiency requirements, but also effectively satisfies the increasing power demands of AI data center power.
The rapid development and deployment of artificial intelligence (AI) including OpenAI’s ChatGPT, Microsoft’s Bing with AI, and Google’s Bard, has penetrated all aspects of people’s lives. New power-hungry AI processors like NVIDIA’s DGX GH200 ‘Grace Hopper’ demand up to 1,600 W each, are driving power-per-rack specifications from 30-40 kW up to 100 kW per cabinet. Meanwhile, with the global focus on energy conservation and emission reduction, as well as the latest European regulations, server power supplies must exceed the 80Plus ‘Titanium’ efficiency specification.
Navitas’ reference designs dramatically accelerate customer developments, minimize time-to-market, and set new industry benchmarks in energy efficiency, power density and system cost, enabled by GaNFast power ICs. These system platforms include complete design collateral with fully-tested hardware, embedded software, schematics, bill-of-materials, layout, simulation and hardware test results.
In this case, the ‘Common Redundant Power Supply’ (CRPS) form-factor specification was defined by the hyperscale Open Compute Project, including Facebook, Intel, Google, Microsoft, and Dell. Now, Navitas’ CRPS185 platform delivers a full 3,200 W of power in only 1U (40 mm) x 73.5mm x 185 mm (544 cc), achieving 5.9 W/cc, or almost 100 W/in3 power density. This is a 40% size reduction vs, the equivalent legacy silicon approach and easily exceeds the Titanium efficiency standard, reaching over 96.5% at 30% load, and over 96% stretching from 20% to 60% load, creating a ‘Titanium Plus’ benchmark, critical for data center operating models.
The CRPS185 uses the latest circuit designs including an interleaved CCM totem-pole PFC with full-bridge LLC. The critical components are Navitas’ new 650V GaNFast power ICs, with robust, high-speed integrated GaN drive to address the sensitivity and fragility issues associated with discrete GaN chips. Additionally, GaNFast power ICs offer extremely low switching losses, with a transient-voltage capability up to 800 V, and other high-speed advantages such as low gate charge (Qg), output capacitance (COSS) and no reverse-recovery loss (Qrr). As high-speed switching reduces the size, weight and cost of passive components in a power supply, Navitas estimates that GaNFast power ICs save 5% of the LLC-stage system material cost, plus $64 per power supply in electricity over 3 years.
Compared to traditional ‘Titanium’ solutions, the Navitas CRPS185 3,200 W ‘Titanium Plus’ design running at a typical 30% load can reduce electricity consumption by 757 kWh, and decrease carbon dioxide emissions by 755 kg over 3 years. This reduction is equivalent to saving 303 kg of coal. Not only does it help data center clients achieve cost savings and efficiency improvements, but it also contributes to the environmental goals of energy conservation and emission reduction.
In addition to data center servers, this solution can also be widely used in applications such as switch/router power supplies, communications, and other computing applications.
“The popularity of AI applications like ChatGPT is just the beginning. As data center rack power increases by 2x-3x, up to 100 kW, delivering more power in a smaller space is key,” said Charles Zha, VP and GM of Navitas China. “We invite power designers and system architects to partner with Navitas and discover how a complete roadmap of high efficiency, high power density designs can cost-effectively, and sustainably accelerate their AI server upgrades.”
Original – Navitas Semiconductor
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GaN Systems has partnered with ACEpower to expedite the widespread adoption of GaN technology in electric vehicles. By harnessing GaN Systems’ cutting-edge power semiconductors, extensive expertise in EV power electronics, and ACEpower’s exceptional track record in high-power system design and high-volume manufacturing capabilities, this partnership will accelerate the GaN-based electric vehicle power market in China.
GaN power semiconductors play a pivotal role in realizing the compact size, lightweight, and high efficiency demanded by the next generation of high-performance electric vehicles. By harnessing GaN Systems’ automotive-grade, high-performance GaN power transistors alongside ACEpower’s deep expertise in the power electronics industry, the companies are combining their distinctive capabilities to unlock the full potential of GaN performance advantages.
In addition to other areas, the partnership will focus on topology optimization and advanced integrated power modules, and high-frequency magnetics design to enhance crucial electric vehicle efficiency and power density significantly.
“We are delighted to announce our partnership with GaN Systems to accelerate GaN adoption in electric vehicles,” said Albert Wang, CEO of ACEpower. “Our longstanding relationship with GaN Systems, coupled with their unrivaled expertise in high reliability, automotive-qualified GaN semiconductors—a vital component for electric vehicles—brings great business opportunities in the fast growth Chinese EV market. Together, we are committed to driving innovation that will revolutionize electric vehicles, particularly in efficiency and power density, delivering substantial benefits to the industry.”
This combination tackles fundamental challenges related to traditionally larger, heavier, inefficient, and costlier power systems based on legacy silicon power transistors. GaN power transistors enable higher efficiency and power density at a faster switching speed for onboard chargers, DC/DC converters, and traction inverters. These advancements translate into faster charging, extended driving range, and reduced overall system costs.
“Today’s announcement marks a significant leap in our cooperative efforts with ACEpower to drive GaN adoption in the Chinese electric vehicle market,” said Jim Witham, CEO of GaN Systems. “This collaboration paves the way for disruptive and game-changing advancements in next-generation electric vehicles. Building upon our strong industry relationships with key players such as BMW, Toyota, and Vitesco, GaN Systems and ACEpower are poised to make a substantial impact in accelerating GaN adoption across the electric vehicle platform.”
GaN Systems and ACEpower’s shared vision extends to capturing substantial market value in emerging sectors such as data centers and electric vehicles. Future initiatives encompass the joint development of high-power density GaN-powered OBCs rated at 6.6kW and 11kW for electric vehicles, solidifying their commitment to driving innovation and advancing the power industry.
Original – GaN Systems
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Infineon Technologies AG and SolarEdge Technologies, Inc. announced the signing of a multi-year Capacity Reservation Agreement (CRA).
Extending the existing partnership, Infineon will supply SolarEdge with critical components for a variety of SolarEdge products. In addition to the CRA, the companies will collaborate on the development of future technologies and cutting-edge solar products based on wide-bandgap (WBG) materials that are key for global green energy supplies.
“We are excited to expand our strategic partnership with SolarEdge to shape innovation in green energy technologies and decarbonization”, said Andreas Urschitz, Chief Marketing Officer at Infineon. “Our long-lasting collaboration is an enormous asset for both companies that paves the way for breakthrough-innovation and accelerated growth, as we combine our expertise and resources. With the latest investments in silicon carbide (SiC) and gallium nitride (GaN) manufacturing capacity, Infineon underlines its commitment to be a leading partner in climate technologies such as solar power.”
Uri Bechor, Chief Operating Officer at SolarEdge, said: “Securing the capacity levels of critical components such as power and wide-bandgap from Infineon enhances SolarEdge’s supply chain resiliency. This Capacity Reservation Agreement with Infineon is in line with our strategy to continue leading the global industry in solar energy advancement.”
Original – Infineon Technologies
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Wide Bandgap (WBG) semiconductors play a strategic role in driving innovation and creating energy efficient and high-performance electronics. Demand for these semiconductors is fueled by sustainability, industry advancements, and advanced connectivity.
However, meeting this demand requires addressing challenges like cost, technology reliability, and geo-politic chaos among others. While the global WBG semiconductor industry is poised for unprecedented growth in the next 10 years, it would be critical to prioritize the opportunities, and effectively tackle the challenges to meet the short-term and long-term demands.
Join Frost & Sullivan for an engaging and thought-provoking Think Tank on “WBG Semiconductors: Overcoming Challenges, Unlocking Potential” on July 28, at 10:00 AM, EDT. The distinguished panel of semiconductor professionals will share their expertise and experiences and will address pressing questions like:
- How can WBG semiconductors play a central role in driving sustainability goals?
- How can WBG semiconductors contribute to improving efficiency in renewable energy systems and energy infrastructure?
- What role would regulations and standards play in driving the adoption of WBG semiconductors?
- Electric vehicles (EVs) have long been strong advocates for WBG semiconductors – What are the current opportunities beyond EV that demand immediate action?
Mark your calendars to engage in discussion with:
- Prabhu Karunakaran, Industry Principal at Frost & Sullivan
- Jonathan Robinson, VP Research, Power and Energy at Frost & Sullivan
- Stephen Oliver, Marketing & Investor Relations at Navitas Semiconductor
- Alexey Cherkasov, Marketing & Sales Director at Leapers Semiconductor
Original – Frost & Sullivan
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Talk to the experts during Bodo Arlt’s virtual roundtable, focused on wide bandgap technology. Its goal is to keep the dialog going on, independent of any events that are hosted on fixed dates. These expert talks will build on the articles published in Bodo’s Power Systems magazine, giving you the chance to ask questions to the experts out of the industry.
If you are interested in participating as an expert, please plan your article for the magazine. Bodo’s team will then invite you to one of the upcoming rounds. The aim is to give as many companies as possible this opportunity, since a wide variety of contributions is of value to everyone. Different speakers will bring new perspectives and approaches.
Bodo’s next session will take place on July 26th.
SiC discussion is planned from 3:00 to 4:00 pm and GaN from 4:30 to 5:30 pm CESTOriginal – Bodo’s Power Systems
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PowerAmerica invites you to our annual Summer Workshop, August 8-10, 2023, on NC State’s Centennial Campus in Raleigh, NC. Expect great networking and presentations on the latest in the business and technology of silicon carbide and gallium nitride power semiconductors and applications.
The workshop includes:
- Keynote remarks by industry leaders
- WBG Tutorials by leading practitioners
- Reports on 10 SiC and GaN PowerAmerica member-funded projects
- Update on SiC and GaN market trends
- Roadmapping future PowerAmerica initiatives
- Commercialization Success Stories
- Ample networking opportunities
Find the agenda and register for the event at PowerAmerica website.
Original – PowerAmerica
