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GaN / LATEST NEWS / SiC / WBG3 Min Read
Navitas Semiconductor released its 4.5 kW AI data center power supply reference design, with optimized GaNSafe™ and Gen-3 ‘Fast’ (G3F) SiC power components. The optimized design enables the world’s highest power density with 137 W/in3 and over 97% efficiency.
Next-generation AI GPUs like NVIDIA’s Blackwell B100 and B200 each demand over 1 kW of power for high-power computation, 3x higher than traditional CPUs. These new demands are driving power-per-rack specifications from 30-40 kW up to 100 kW.
Navitas announced its AI Power Roadmap in March 2024, showcasing next-generation data center power solutions for the growing demand in AI and high-performance computing (HPC) systems. The first design was a GaNFast-based 3.2 kW AC-DC converter in the Common Redundant Power Supply (CRPS) form factor, as defined by the hyperscale Open Compute Project. The 3.2 kW CRPS185 (for 185 mm length) enabled a 40% size reduction vs. the equivalent legacy silicon approach and easily exceeded the ‘Titanium Plus’ efficiency benchmark, critical for data center operating models and a requirement for European data center regulations.
Now, the latest 4.5 kW CRPS185 design demonstrates how new GaNSafe™ power ICs and GeneSiC Gen-3 ‘Fast’ (G3F) MOSFETs enables the world’s highest power density and efficiency solution. At the heart of the design is an interleaved CCM totem-pole PFC using SiC with full-bridge LLC topology with GaN, where the fundamental strengths of each semiconductor technology are exploited for the highest frequency, coolest operation, optimized reliability and robustness, and highest power density and efficiency. The 650 V G3F SiC MOSFETs feature ‘trench-assisted planar’ technology which delivers world-leading performance over temperature for the highest system efficiency and reliability in real-world applications.
For the LLC stage, 650 V GaNSafe power ICs are ideal and unique in the industry with integrated power, protection, control, and drive in an easy-to-use, robust, thermally-adept TOLL power package. Additionally, GaNSafe power ICs offer extremely low switching losses, with a transient-voltage capability up to 800 V, and other high-speed advantages such as low gate charge (Qg), output capacitance (COSS), and no reverse-recovery loss (Qrr). High-speed switching reduces the size, weight, and cost of passive components in a power supply, such as transformers, capacitors, and EMI filters. As power density increases, next-gen GaN and SiC enable sustainability benefits, specifically CO2 reductions due to system efficiency increases and ‘dematerialization’.
The 3.2 kW and 4.5 kW platforms have already generated significant market interest with over 30 data center customer projects in development expected to drive millions in GaN and SiC revenue, ramping from 2024 into 2025.
Navitas’ AI data center power supply reference designs dramatically accelerate customer developments, minimize time-to-market, and set new industry benchmarks in energy efficiency, power density and system cost, enabled by GaNFast power ICs and GeneSiC MOSFETs. These system platforms include complete design collateral with fully tested hardware, embedded software, schematics, bills-of-material, layout, simulation, and hardware test results.
“AI is dramatically accelerating power requirements of data centers, processors and anywhere AI is going in the decades to come creating a significant challenge for our industry. Our system design center has stepped up to this challenge delivering a 3x increase in power in less than 18 months”, said Gene Sheridan, CEO of Navitas Semiconductor. “Our latest GaNFast technology, combined with our G3F SiC technology are delivering the highest power density and efficiency the world has ever seen…the perfect solution for the Blackwell AI processors and beyond.”
Original – Navitas Semiconductor
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GaN / LATEST NEWS / SiC / WBG2 Min Read
AIXTRON SE supports Nexperia B.V. in the ramp-up of its 200mm volume production for silicon carbide (SiC) and gallium nitride (GaN) power devices. With the new G10-SiC for the 200mm SiC volume ramp, Nexperia is placing a repeat order for AIXTRON SiC tools. This is complemented by an order for AIXTRON G10-GaN tools.
Both GaN and SiC epitaxial films are essential for the design of next-generation energy-efficient Field-Effect (FET) or Metal-Oxide-Field Effect (MOSFET) transistors to be used in various power conversion applications ranging from data centers and solar inverters in electric vehicles (EV) or trains.
Nexperia has decades of experience in the development of power devices, achieving more than 2.1 billion USD in revenue in 2023. After releasing its first GaN FET device in 2019 and its first SiC MOSFET in 2023, Nexperia continues to expand its portfolio with new high-reliability and power-efficient devices.
Nexperia, headquartered in Nijmegen (Netherlands), operates front-end factories in Hamburg (Germany) and Greater Manchester (England). The AIXTRON epitaxy systems will be installed at Nexperia’s wafer fab in Hamburg (Germany), further strengthening the semiconductor production capabilities in the region. Nexperia’s Hamburg site produces approximately 100 billion discrete semiconductors annually, accounting for about a quarter of the global production of this type of products.
“We are honored to strengthen our alliance with Nexperia, a pivotal player in the semiconductor landscape. Our G10 epitaxy solutions are at the heart of this collaboration, bolstering Nexperia’s growth strategies and enabling the high-volume production of wide bandgap semiconductors for commercial applications. Together, we are setting the pace for the industry’s transition to more energy-efficient SiC and GaN solutions”, said Dr. Felix Grawert, CEO and President of AIXTRON SE.
“As we advance our technological capabilities and market presence in high-power semiconductor production, our strategic partnership with AIXTRON is transformative. Integrating the G10 systems will significantly enhance our wide bandgap technology development and production capabilities. We build on AIXTRON’s proven uniformity and leverage the additional productivity gains of AIXTRON’s G10 tools to scale up our production efficiently and cost-effectively. With the new G10 tools in our Hamburg facility, we are poised for further advancements in our production capabilities,” said Achim Kempe, COO at Nexperia B.V.
Original – AIXTRON
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GaN / LATEST NEWS / WBG3 Min Read
Efficient Power Conversion (EPC) announced that it has moved one step closer to achieving preeminence in the gallium nitride (GaN) power semiconductor industry, as its intellectual property rights to this revolutionary technology were upheld for the third time in three months. The next-generation wide bandgap semiconductors developed by EPC are essential to artificial intelligence (AI), satellites, fast chargers, lidar, humanoid robots and many other transformational technologies.
The U.S. International Trade Commission (ITC) found two of EPC’s key patents valid and one, the Company’s foundational patent, infringed by Innoscience (Zhuhai) Technology Co., Ltd. and its affiliate, Innoscience America, Inc. The ITC’s recommendation comes on the heels of two recent decisions from the China National Intellectual Property Administration (CNIPA), which similarly validated EPC’s counterpart patents in China. The ITC initial determination is a significant milestone in solidifying EPC’s leadership in wide bandgap semiconductors and could lead to a ban later this year on importation of Innoscience’s infringing products into the United States.
“The ITC’s finding that Innoscience uses our patented technology without authorization puts EPC in an enviable position, as U.S. and Chinese regulatory bodies have upheld the validity of our patents,” said Alex Lidow, CEO and Co-Founder of EPC.
“The Commission’s recommendations validate nearly two decades of hard work, resources and R&D that went into developing EPC’s uniquely valuable intellectual property portfolio,” Dr. Lidow added.
Over the last 15 years, EPC has capitalized on its first-mover advantage to develop a broad portfolio of over 200 GaN-related patents and over 150 products, which include its rapidly growing family of integrated circuits, automotive qualified and radiation hardened devices.
Compared with traditional silicon-based power devices, GaN represents a significant leap, with higher efficiency, faster switching speeds, smaller size and lower cost. GaN power devices are integral to self-driving vehicles, medical and communications devices, next-generation rapid chargers, drones, satellites, data centers, e-bikes, solar power systems and humanoid robots, among many other applications. Most notably, EPC’s cutting-edge semiconductors are central to powering the AI revolution by significantly freeing up space for extra computing power while simultaneously reducing energy consumption.
The ITC’s preliminary ruling found both U.S. patents that EPC asserted against Innoscience valid. It also found “infringement [by Innoscience] of U.S. Patent No. 8,350,294,” EPC’s foundational patent used broadly across multiple industries. The second EPC patent, U.S. Patent No. 8,404,508, was found valid, but not infringed by Innoscience. The Commission’s final determination is expected to be issued on November 5, 2024.
Original – Efficient Power Conversion
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GaN / LATEST NEWS / PROJECTS / WBG3 Min Read
Texas Instruments announced a long-term collaboration with Delta Electronics, a global power and energy management manufacturer, to create next-generation electric vehicle (EV) onboard charging and power solutions. This work will leverage both companies’ research and development capabilities in power management and power delivery in a joint innovation laboratory in Pingzhen, Taiwan. Together, TI and Delta aim to optimize power density, performance and size to accelerate the realization of safer, faster-charging and more affordable EVs.
“The transition to electric vehicles is key to helping achieve a more sustainable future, and through years of collaboration with Delta Electronics, we have a solid foundation to build upon,” said Amichai Ron, senior vice president for Embedded Processing at TI. “Together with Delta, we will use TI semiconductors to develop EV power systems like onboard chargers and DC/DC converters that are smaller, more efficient and more reliable, increasing vehicle driving range and encouraging more widespread adoption of electric vehicles.”
“Delta has been developing high-efficiency automotive power products, systems and solutions since 2008 to help reduce transportation-related carbon emissions,” said James Tang, executive vice president of Mobility and head of the Electric Vehicle Solutions business group at Delta Electronics.
“Through the establishment of this joint innovation laboratory with TI, Delta intends to leverage TI’s abundant experience and advanced technology in digital control and GaN to enhance the power density and performance of our EV power systems. With more leading-edge product development and design capabilities, we aim to achieve closer technology exchange and collaboration to accelerate product development and improve product safety and quality. We look forward to furthering our technology leadership and creating a win-win situation in the rapidly developing electric vehicle market.”
Three phases of development for next-generation automotive power solutions
- Phase one for the collaboration focuses on Delta’s development of a lighter-weight, cost-effective 11kW onboard charger, using TI’s latest C2000™ real-time microcontrollers (MCUs) and TI’s proprietary active electromagnetic interference (EMI) filter products. The companies are working together using TI’s products to reduce the charger’s size by 30% while achieving up to 95% power conversion efficiency.
- In phase two, TI and Delta will leverage the latest C2000 real-time MCUs for automotive applications to enable automakers to achieve automotive safety integrity levels (ASILs) up to ASIL D, which represents the strictest automotive safety requirements. Highly integrated automotive isolated gate drivers will further enhance the power density of onboard chargers, while also minimizing overall solution size.
- In phase three, the two companies will collaborate to develop the next generation of automotive power solutions, capitalizing on TI’s more than 10 years of experience in developing and manufacturing products with gallium nitride (GaN) technology.
“The rapid growth of electronics in automotive applications has enabled more feature-rich, efficient and safer vehicles. However, technical challenges remain,” said Luke Lee, president of Taiwan, Japan, Korea and South Asia, Texas Instruments. “Having been in Taiwan for 55 years, coupled with decades of experience in automotive power management, TI has built a strong connection with the local automotive industry. Establishing this collaboration and joint innovation laboratory with Delta is just one more way TI is driving vehicle electrification forward.”
Original – Texas Instruments
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Navitas Semiconductor announced that its GaNFast power ICs have been selected to lead Lenovo’s latest GaN technology chargers; Xiaoxin 105 W GaN charger, and the Legion C 170 W GaN charger, respectively designed for daily travel and gaming power, bringing consumers a brand new fast charging experience.
The Xiaoxin 105 W GaN charger is designed for daily travel. It outputs 105 W of power and is equipped with 3 ports (2C1A) supporting multiple protocols; easily achieving the charging needs of various devices simultaneously. At only 206 g, the 105 W fast-charger is 41% lighter than a typical 100 W computer adapter and takes only 34 minutes to charge the Xiaoxin 16 Pro to 50%. The Navitas NV6138 GaNFast power IC with GaNSense™ technology is at the heart of the high-frequency flyback topology design, providing a stable, durable, and efficient charging experience.
The Legion C170 W GaN charger is designed specifically for hardcore gamers. It delivers 170 W of continuous power through a single port to meet the high-power demands of gaming devices. At only 245 grams, it’s 78% lighter than Legion Y9000P’s original inbox charger and can charge up to 2 times faster than the Legion C140 W Charger. The Navitas NV6136 GaNFast power IC with GaNSense technology is used in the PFC stage, featuring loss-less current sensing and 6 times faster short-circuit protection than competing solutions, delivering cooler operation, superior efficiency, reliability, and power density.
Lenovo’s long-term collaboration with Navitas has brought a series of groundbreaking fast chargers to the market and played a significant role in raising market awareness on showcasing the benefits of GaN technology. At the Lenovo YOGA CC65 dual-port GaN charger launch event in 2021, Navitas’ 6-inch GaN wafer and GaNFast power ICs were publicly showcased for the first time, unveiling the mysteries of this leading technology to consumers.
In terms of gaming products, Navitas collaborated with Lenovo to create a 90 W charger for the Lenovo Legion Pro Gaming Phone and a 135 W, C135 W GaN charger for the Legion 5 and 5 Pro Gen 7 laptops. For lightweight travel, Lenovo developed a series of compact, lightweight powerful GaN chargers using Navitas technology, including the revolutionary compact Thinkplus ‘lipstick’ and the ultra-thin Thinkbook ‘biscuit’ charger.
Lenovo and Navitas are not only partners in power technology but also pioneers in sustainability. Lenovo Group is verified by the Science Based Targets initiative (SBTi) for net zero targets and Navitas is the world’s first power semiconductor company to achieve CarbonNeutral® certification. Navitas’ advanced GaN technology enables Lenovo to continuously create smaller, lighter chargers with higher power density, significantly reducing the number of passive and magnetic components inside the charger, achieving CO2 reduction in production through “dematerialization”. The increased efficiency reduces power loss during use, thus further lowering carbon emissions in the product lifecycle.
“With the support of Navitas GaNFast power ICs, we have successfully introduced two new Xiaoxin and Legion GaN chargers to the market, enabling a lightweight and powerful charging experience for daily travel and gaming performance,” said Elon Chen, Product Manager of Consumer Business for Lenovo Group China. “Moreover, the successful application of Navitas’ GaNFast technology continuously reduces the size and weight of chargers, highly increasing efficiency, bringing convenience to consumers, while contributing to carbon reduction.”
“Powerland is very pleased to collaborate with Navitas again to create two high-performance and lightweight GaN chargers for Lenovo,” said Dr. Wang Chuanyun, VP of R&D for Powerland Group. “Powerland is dedicated to pushing the envelope of technology to build leading power products for our clients. Efficient, reliable, and easy-to-use GaNFast power ICs are crucial to realize that.”
“Navitas is very honored to enter Lenovo’s supply chain twice in a short period, providing high-efficiency and stable GaNFast fast charging power into two important Lenovo products,” said Charles Zha, VP and GM of Navitas China. “By working closely with Powerland, our highly integrated GaNFast technology has enabled Lenovo to continuously achieve leading-edge results in size, performance, and reliability of chargers. With innovative laptops like AI PCs on the rise, Navitas predicts a surge in demand for powerful GaNFast charging solutions. Navitas is on a mission to push the limits of gallium nitride technology, empowering global partners like Lenovo to slash energy usage and emissions in charger and adapter production. Together, we will speed towards a greener, more sustainable planet!”
Original – Navitas Semiconductor
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GaN / LATEST NEWS / PRODUCT & TECHNOLOGY / WBG2 Min Read
EPC Space announced the introduction of two new rad-hard GaN discretes with low on-resistance and extremely low gate charge for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET.
The EPC7001BSH is a Rad-Hard eGaN® 40 V, 50 A, 11 mΩ Surface Mount (FSMDB) and the EPC7002ASH is a Rad-Hard eGaN 40 V, 15 A, 28 mΩ Surface Mount (FSMDA). Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These devices come packaged in hermetic packages in very small footprints.
EPC’s eGaN FETs and ICs offer a higher performing alternative to conventional rad hard silicon devices for high reliability and space applications. EPC’s Rad hard devices are significantly smaller, have 40 times better electrical performance, and lower overall cost than rad hard silicon devices. Moreover, EPC Space’s rad hard devices exhibit superior resistance to radiation, supporting higher total radiation levels and SEE LET levels compared to traditional silicon solutions.
Part Number Drain to Source Voltage (VDS) Drain to Source Resistance (RDS(on)) Single-Pulse Drain Current (IDM) Package Size (mm) Total Dose (TID) Heavy Ion Single Event Effects (SEE) EPC7001BSH 40 11 mΩ 120 5.7 x 3.9 1 Mrad SEE immunity up to LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated Breakdown EPC7002ASH 40 28 mΩ 40 3.4 x 3.4 1 Mrad SEE immunity up to LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated Breakdown With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.
Applications benefiting from the performance of these products include DC-DC power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, deep space probes, and ion thrusters.
“These two new additions to our rad-hard product line offer designers high power and low on-resistance solutions enabling a generation of power conversion and motor drives in space operating at higher efficiencies, and greater power densities than what is achievable with traditional silicon-based rad-hard solutions,” said Bel Lazar, CEO of EPC Space.
Original – EPC Space