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GaN / LATEST NEWS / PRODUCT & TECHNOLOGY / WBG2 Min Read
EPC announces the availability of the EPC9193, a 3-phase BLDC motor drive inverter using the EPC2619 eGaN® FET. The EPC9193 operates with a wide input DC voltage ranging from 14 V and 65 V and has two configurations – a standard unit and a high current version:
- The EPC9193 standard reference design uses a single FET for each switch position and can deliver up to 30 ARMS maximum output current.
- A high current configuration version of the reference design, the EPC9193HC, uses two paralleled FETs per switch position with the ability to deliver up to 60 Apk (42 ARMS) maximum output current.
Both versions of the EPC9193 contain all the necessary critical function circuits to support a complete motor drive inverter including gate drivers, regulated auxiliary power rails for housekeeping supplies, voltage, and temperature sense, accurate current sense, and protection functions. The EPC9193 boards measure just 130 mm x 100 mm (including connector).
Major benefits of a GaN-based motor drive are exhibited with these reference design boards, including lower distortion for lower acoustic noise, lower current ripple for reduced magnetic loss, and lower torque ripple for improved precision. The extremely small size of this inverter allows integration into the motor housing resulting in the lowest EMI, highest density, and lowest weight.
EPC provides full demonstration kits, which include interface boards that connect the inverter board to the controller board development tool for fast prototyping that reduce design cycle times.
“GaN-based inverters enhance motor efficiency and lower costs, expensive silicon MOSFET inverters”, said Alex Lidow, CEO of EPC. “This results in smaller, lighter, quieter motors with increased torque, range, and precision.”
Original – Efficient Power Conversion
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GaN / LATEST NEWS / PRODUCT & TECHNOLOGY / WBG3 Min Read
Teledyne e2v HiRel announced the availability of radiation tolerant RF and Power products for the evolving New Space market. Qualified based on the EEE-INST-002 space grade standard, these plastic packaged products are qualified for the harsh environment of space with –55°C to +125°C temperature operating ratings, and are radiation tolerant for use in LEO, MEO, and GEO missions.
The RF products include several low noise amplifiers (LNA) and are ideal for demanding high-reliability space applications where low noise figure, minimal power consumption, and small footprint are critical to mission success. They are ideally suited for satellite communication systems that are increasing the power of radio signals so utilizing components with minimal noise and distortion help minimizing the degradation of digital signals.
These LNAs are developed in the radiation tolerant pHEMT technology semiconductor process technology. The monolithic microwave integrated circuit (MMIC) products are available in dual-flat no lead (DFN) plastic over molded SMT packages and are biased over single positive VDD supply voltages, eliminating the need for negative power rail voltages.
- The TDLNA002093SEP delivers a low noise figure of less than 0.37 dB, IDDQ from 30 mA to 100mA, and exceptional performance from 1 GHz (L-band) to 6 GHz (S-band) frequencies.
- The TDLNA0430SEP delivers an industry leading low noise figure of less than 0.35 dB, IDDQ of 60mA and exceptional performance from 0.3 GHz (UHF) to 3 GHz (S-band) frequencies.
- The TDLNA2050SEP delivers an industry leading low noise figure of less than 0.4 dB, IDDQ of 60mA and exceptional performance from 2.0 GHz (S-band) to 5 GHz (C-band) frequencies.
The Power products offerings include Gallium Nitride (GaN) technology High Electron Mobility Transistors up to 650V, currents up to 90 Amp, high switching frequencies, and low RDSON. These GaN solutions have easy gate-drive requirements and enable high power density designs with four times less space requirements than traditional MOSFETs. The TDG650E60xSP parts are available in extremely small non hermetic packages with either top-side and bottom-side thermal pads and are ideally suited for satellite power supply systems with space production screening.
“Today we’re announcing our New Space products offering of RF and Power products optimized for space applications,” said Mont Taylor, Vice President and Business Development Manager at Teledyne e2v HiRel. “These LNAs with their ultra low noise figures coupled with the high power density capabilities of GaN transistors, we believe these products will enable system designers with superior solutions for space based satellite communication applications.”Original – Teledyne e2v HiRel
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Cambridge GaN Devices (CGD) is addressing higher power industrial applications with its ICeGaN™ technology which has already proved itself rugged, reliable and easy-to-use in high volume consumer devices. At the APEC 2024, IEEE Applied Power Electronics Conference and Exposition, the company is introducing new reference designs and showing demos which address the broad and diverse industrial market.
Andrea Bricconi | Chief Commercial Officer, CGD
“We are acutely aware of the increasing power requirements of industrial applications, and the need for high efficiency. For example, as the use of Artificial Intelligence (AI) proliferates, the power demanded by the exponential growth in power demanded by datacentres is growing almost exponentially. Other applications, such as solar inverters, amplifiers, transport and smart mobility, process control and manufacturing are also interested in GaN and the feedback we have received is that they love the simplicity of our ‘Drive it Like a MOSFET’ approach.”
At APEC, visitors to the booth are able to see the progress that CGD is making to support both emerging and existing markets for GaN technology..
With a high power density of 23 W/in3, GGD’s 350 W PFC/LLC reference design has an average efficiency of 93%, and a no-load power consumption of 150 mW. The CrM Totem Pole PFC + Half-Bridge LLC PSU has been realised using CGD’s 650 V, 55 mΩ, H2 series ICeGaN technology, and delivers 20 V / 17.5 A output.
The result of a partnership deal struck last year with Neways Electronics, a 3 kW photo-voltaic inverter is used to boost the DC solar voltage to a stable DC link voltage. With a maximum efficiency of 99.22% due to zero-current switching, it is a perfect example of how CGD’s GaN HEMT structure is simple for engineers to use, since it employs a standard silicon controller from Analog Devices Inc.
ICeGaN has been employed by AGD Productions in its compact AGD DUET amplifier which is rated at 300W 4Ω. This is the first time the company has used a 100% GaN power transistor design for both the power stage and the amplifier.
Finally, the GaNext project, a consortium of 13 partners from three nations has delivered compact 1 kW intelligent power modules featuring integrated drive, voltage control and protection circuits using CGD’s ICeGaN.
Original – Cambridge GaN Devices
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GaN / LATEST NEWS / PRODUCT & TECHNOLOGY / WBG2 Min Read
Power Integrations announced the InnoMux™-2 family of single-stage, independently regulated multi-output offline power-supply ICs. InnoMux-2 ICs consolidate AC-DC and downstream DC-DC conversion stages into a single chip, providing up to three independently regulated outputs for use in white goods, industrial systems, displays and other applications requiring multiple voltages.
Elimination of separate DC-DC stages slashes component count, reduces PCB footprint and increases efficiency by as much as 10 percentage points compared to traditional two-stage architectures. Efficiency is aided by the ICs’ 750 V PowiGaN™ gallium-nitride transistors, zero-voltage switching (without an active clamp) and synchronous rectification.
Roland Saint-Pierre, vice president of product development at Power Integrations said: “Most modern electronic systems rely on multiple internal voltages to operate various functions such as computing, communication and actuation function – typically heat, light, sound or motion of some kind. But losses in each conversion stage are compounded, degrading system performance and generating heat.
The InnoMux-2 IC overcomes this challenge by providing up to three independently regulated voltage outputs or two voltage output and a constant current output from a single stage, achieving a compact and efficient power sub-system with low component count.”
InnoMux-2 ICs deliver up to 90 watts of output power with accurate regulation of better than ±3 percent across the full input line, load, temperature and differential current step conditions. Total power system efficiency (AC to regulated low-voltage DC segment) is above 90 percent; the advanced InnoMux-2 controller also manages light-load power delivery, avoiding the need for pre-load resistors and reducing no-load consumption to less than 30 mW. This conserves power for necessary functionality in applications subject to the 300 mW allowance for standby usage under the European energy-using product (EuP) regulations.
InnoMux-2 devices leverage Power Integrations’ thermally efficient InSOP™24 and InSOP™28 packages with PCB cooling, so no heatsink is required. Device options include dual- and three-output constant voltage (CV); optionally, one output may be dedicated to constant current (CC) drive, suitable for powering LEDs in displays or for high-speed charging of an internal battery. Typical applications include TVs, monitors, appliances, networking, home and building automation, LED emergency lighting and industrial power supplies.
Original – Power Integrations
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GaN / LATEST NEWS / WBG2 Min Read
Navitas Semiconductor announced that its GaNFast™ power ICs drive Samsung’s 25 W “Super-Fast Charging” (SFC) for the new, AI-enhanced Galaxy S24 smartphone.
Flagship hardware specifications include a 2340 x 1080 (FHD+) dynamic AMOLED 2X, and 120 Hz screen, plus the Galaxy S24 delivers innovative and practical AI features to help transform the way users communicate, create and discover the world. Galaxy AI features like Live Translate, Chat Assist and new “Circle to Search” with Google, to improve nearly every experience that S24 users can enjoy.
The 25 W GaNFast unit delivers 50% charge to the high-capacity 4000 mAh battery in only 30 minutes, while the USB PD 3.0 (Type-C) specification makes it compatible with other Samsung products including Galaxy Buds2 audio, Galaxy Z Fold5, Galaxy Flip and Galaxy A23.
Designed with sustainability in mind, the 25 W power adapter features a 75% reduction in power consumption sleep mode. Navitas’ GaNFast technology is deployed in a high-frequency, quasi-resonant (HFQR) topology running at 150 kHz – 3x faster than standard silicon designs – and delivers a 30% size shrink vs. conventional charger designs.
“We are excited to extend our relationship with Samsung as they continue to develop groundbreaking mobile phone technology,” said David Carroll, Sr. VP Worldwide Sales for Navitas. “Deploying GaNFast ICs has allowed Samsung to create an ultra-compact, lightweight and efficient 25W adapter that can rapidly re-charge the new Galaxy S24 and a variety of other phones and accessories in the Samsung range.”
Original – Navitas Semiconductor