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Innoscience Technology will demonstrate industry-leadership at the upcoming IEEE Applied Power Electronics Conference and Exposition (APEC) 2024.
At the industrial session, Innoscience will address the exponential demand in power by datacenters due to the processing power necessitated by Artificial Intelligence (AI) applications. The paper will show that with Innoscience’s 650V InnoGaN, it is possible to make a 2kW AC/DC conversion PSU with a high power density and a peak efficiency above 96%, thereby meeting the recent stringent 80 Plus titanium efficiency rating.
Thanks to the absence of a body diode on GaN devices, a simple Totem pole PFC architecture can be implemented while still reaching high levels of efficiency. At the booth Innoscience will also showcase a 4.2kW AC/DC conversion PSU meeting 80 Plus titanium efficiency rating within a power density of 130W/in3.
Moreover, to address the 48V to 12V DC-DC power conversion inside the data center, Innoscience will present an all GaN HEMTs based 1kW 48V-12V unregulated LLC solution that features GaN power devices both at the primary side (100V devices) as well as at the secondary side (40V devices). In order to maximize the power density and simplify the circuit, the solution uses Innoscience’s recent integrated SolidGaN solution (ISG3201), which integrates an half-bridge (made by two 100V/3.2mOhm InnoGaN devices) with its driver, protection etc.. in one package. The final all GaN 1kW 48V-12 converter has a size of only 50mmx30mmx9mm, which is 70% smaller than a Silicon counterpart rated only 600W. The converter achieves a peak efficiency of 98.5%.
Dr. Denis Marcon, General Manager Innoscience Europe, comments: “Reliability is also an important consideration for data centers, because they operate 24/7 and they must guarantee continuity of service. Therefore, in this paper we will also present strong reliability data of Innoscience’s HV and LV GaN power devices, including end-of-life testing for life-time calculation which shows reliability data at the parts-per-billion level.”
Yi Sun, General Manager Innoscience America comments: “Innoscience today has one of the widest portfolio of GaN power device solutions covering 30V to 700V applications, a family of GaN discrete available in standard packages (e.g. QFN, FCQFN, TO252 etc..) as well as integrated GaN IC solutions that include in one chip the GaN FET, the driver, protections etc.”
Visitors to the Innoscience booth at APEC will also see new products, such as the NV100FQ030A, a 100V bidirectional IC that can be employed to deliver high efficiency in applications including battery management systems, high-side load switching in bidirectional converters, and various switching circuits in power systems.
Yi Sun, adds: “Innoscience is leading the GaN industry with many new products that are industry firsts. That is why our devices are finding applications in all markets, from consumer chargers through industrial and communications and into the automotive sector. Join us at booth 1543 to find out more.”
Innoscience presentations:
- IS02.7 – Industry Session / Tuesday Feb 27th ,11:30-11:55am “Ultra-High Frequency (10MHz) Buck Converter with GaN HEMT for Mobile Phone Application” given by Dr Pengju Kong
- IS11.1 – Industry Session / Wednesday Feb 28th, 8:30-8:55am “Efficient and compact power conversions made possible with GaN technology” given by Dr Pengju Kong.
Original – Innoscience Technology
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Texas Instruments introduced two new power conversion device portfolios to help engineers achieve more power in smaller spaces, providing the highest power density at a lower cost. TI’s new 100V integrated gallium nitride (GaN) power stages feature thermally enhanced dual-side cooled package technology to simplify thermal designs and achieve the highest power density in mid-voltage applications at more than 1.5kW/in3.
TI’s new 1.5W isolated DC/DC modules with integrated transformers are the industry’s smallest and most power-dense, helping engineers shrink the isolated bias power-supply size in automotive and industrial systems by over 89%. Devices from both portfolios will be on display at this year’s Applied Power Electronics Conference (APEC), Feb. 25-29 in Long Beach, California.
“For power-supply designers, delivering more power in limited spaces will always be a critical design challenge,” said Kannan Soundarapandian, general manager of High Voltage Power at TI. “Take data centers, for example – if engineers can design power-dense server power-supply solutions, data centers can operate more efficiently to meet growing processing needs while also minimizing their environmental footprint. We’re excited to continue to push the limits of power management by offering innovations that help engineers deliver the highest power density, efficiency and thermal performance.”
Increase power density and efficiency with 100V integrated GaN power stages
With TI’s new 100V GaN power stages, LMG2100R044 and LMG3100R017, designers can reduce power-supply solution size for mid-voltage applications by more than 40% and achieve industry-leading power density of over 1.5kW/in3, enabled by GaN technology’s higher switching frequencies. The new portfolio also reduces switching power losses by 50% compared to silicon-based solutions, while achieving 98% or higher system efficiency given the lower output capacitance and lower gate-drive losses. In a solar inverter system, for example, higher density and efficiency enables the same panel to store and produce more power while decreasing the size of the overall microinverter system.A key enabler of the thermal performance in the 100V GaN portfolio is TI’s thermally enhanced dual-side cooled package. This technology enables more efficient heat removal from both sides of the device and offers improved thermal resistance compared to competing integrated GaN devices.
To learn more about the benefits of TI’s 100V GaN power stages for mid-voltage applications, read the technical article, “4 mid-voltage applications where GaN will transform electronic designs.”
Shrink bias power supplies by more than 89%
With over eight times higher power density than discrete solutions and three times higher power density than competing modules, TI’s new 1.5W isolated DC/DC modules deliver the highest output power and isolation capability (3kV) for automotive and industrial systems in a 4mm-by-5mm very thin small outline no-lead (VSON) package. With TI’s UCC33420-Q1 and UCC33420, designers can also easily meet stringent electromagnetic interference (EMI) requirements, such as Comité International Spécial des Perturbations Radioélectriques (CISPR) 32 and 25, with fewer components and a simple filter design.The new modules use TI’s next-generation integrated transformer technology, which eliminates the need for an external transformer in a bias supply design. The technology allows engineers to shrink solution size by more than 89% and reduce height by up to 75%, while cutting bill of materials by half compared to discrete solutions.
With the first automotive-qualified solution in this small package, designers can now reduce the footprint, weight and height of their bias supply solution for electric vehicle systems such as battery management systems. For space-constrained industrial power delivery in data centers, the new module enables designers to minimize printed circuit board area.
To learn more about the benefits of TI’s 1.5W isolated DC/DC modules, read the technical article, “How a new isolated DC/DC module can help solve power-density challenges.”
Pushing the limits of power at APEC 2024
These new devices are the latest ways TI is pushing power further and making innovation possible for engineers everywhere. At APEC 2024, TI will showcase the latest automotive and industrial designs for 48V automotive power; the first USB Power Delivery Extended Power Range full charging solution on the market; an 800V, 300kW silicon carbide-based traction inverter; high-efficiency power for server motherboards; and more.- Saturday, Feb. 24-Thursday, Feb. 29: Visit TI in the Long Beach Convention & Entertainment Center, Booth No. 1145. See TI.com/APEC for more information.
- Wednesday, Feb. 28 at 12 p.m. Pacific time: TI General Manager of Industrial Power Design Services Robert Taylor will present an industry session, “To Power Density and Beyond: Breaking Through Barriers to Achieve the Highest Power Density.” He will discuss innovations in packaging, integration and system-level techniques that are making greater power density possible.
- Throughout APEC: TI power experts will lead 20 industry and technical sessions to address power-management design challenges. The full schedule of TI experts’ industry and technical sessions is available at TI.com/APEC.
Original – Texas Instruments
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Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices that make greener electronics possible, will be present at the upcoming APEC 2024, IEEE Applied Power Electronics Conference and Exposition. In addition to having its largest ever booth at the show, the company will contribute with a number of papers including an analysis of how GaN can play a part in supporting the exponential growth in power demanded by datacentres as the use of Artificial Intelligence (AI) proliferates.
GIORGIA LONGOBARDI | CHIEF EXECUTIVE OFFICER, CGD:
“With datacentres now demanding 100kW per rack and predicting even more in the very near future, power system designers are looking to employ GaN devices in new architectures. At CGD we are addressing this challenge with new devices and reference designs which we will be discussing at APEC, along with many other applications where GaN can play a huge role in enabling sustainable electronics solutions that are more efficient, have high performance and are more compact.”
CGD will present three papers at APEC:
- Tuesday 27th February, 15.00-15.30 – ‘How ICeGaN™ technology can address the datacentre challenges that digitalisation brings’, with Andrea Bricconi, Chief Commercial Officer, CGD and Peter Di Maso, VP of Business Development (Americas) CGD.
- Wednesday 28th February, 09.10-09.30 – ‘Evaluation of GaN HEMT dv/dt Immunity and dv/dt induced false turn-on energy loss’, with Nirmana Perera, Application Engineer, CGD.
- Thursday 29th February, 09:45 – 10:10: ‘Monolithic integration addresses the design challenges of GaN Power devices’, with Di Chen, Director of Business Development & Technical Marketing, CGD.
On booth 1553, CGD will present a range of demos designed to showcase industry’s first easy-to-use and scalable 650 V GaN HEMT family. ICeGaN™ H2 single-chip eMode HEMTs can be driven like a MOSFET, without the need for special gate drivers, complex and lossy driving circuits, negative voltage supply requirements or additional clamping components.
Addressing the increase in power required by server and industrial applications, CGD will show a 350 W PFC/LLC reference design using ICeGaN (650 V, 55 mΩ, H2 series). With a board power density of 23 W/in3, the bridgeless CrM Totem Pole PFC plus half-bridge LLC design has a peak efficiency of 95%, (93% average) and a no-load power consumption of 150 mW.
ANDREA BRICCONI | CHIEF COMMERCIAL OFFICER, CGD:
“GaN is now accepted as a reliable and proven technology that is able to deliver high efficiency and power density simultaneously. Datacentres, with their insatiable need for power, are an obvious application for GaN, but there are many other consumer, industrial and automotive applications where GaN can also demonstrate the ability to be a disruptive technology. CGD has delivered industry’s most easy-to-use GaN technology – ICeGaN – and we are keen to share our ideas with the audience at APEC.”
Original – Cambridge GaN Devices
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Innoscience Technology has launched a new 100V bi-directional member of the company’s VGaN IC family. The first family of VGaN devices rated 40V with wide on-resistance range (1.2mOhm – 12mOhm) have been successfully deployed in the USB OVP of mobile phones such as OPPO, OnePlus etc.
The new 100V VGaN (INV100FQ030A) can be employed to achieve high efficiency in 48V or 60V battery management systems (BMS), as well as for high-side load switch applications in bidirectional converters, switching circuits in power systems, and other fields. Such device it is ideal in application such as home batteries, portable charging station, e-scooters, e-bikes etc.
One VGaN replaces two back-to-back Si MOSFETs; they are connected with a common drain to achieve bidirectional switching of battery charging and discharging, further reducing on-resistance and loss significantly with respect to traditional Silicon solution. BOM count, PCB space and costs are also reduced accordingly.
The INV100FQ030A 100V VGaN IC supports two-way pass-through, two-way cut-off and no-reverse-recovery modes of operation. Devices feature an extremely low gate charge of just 90nC, ultra-low dynamic on-resistance of 3.2mΩ and small, 4x6mm package size.
Dr. Denis Marcon, General Manager, Innoscience Europe comments: “Innoscience’s continuous innovation and development of our core technology plus our 8-inch wafer GaN IDM model will accelerate the miniaturization of systems, making them more efficient and energy-saving.”
Innoscience ‘s 100V GaN series products are in mass production in En-FCQFN (exposed top side cooling) and FCQFN packaging.
Original – Innoscience Technology
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Infineon Technologies AG announced a collaboration with Worksport. Worksport Ltd. will use Infineon’s GaN power semiconductors GS-065-060-5-B-A in the converters for its portable power stations to increase efficiency and power density. Enabled by Infineon’s GaN transistors, the power converters will be lighter and smaller in size with reduced system costs. In addition, Infineon will support Worksport in the optimization of circuits and layout design to further reduce size and increase power density.
“Infineon’s high-quality standard and solid supply chain provide us with the best components to ensure power-dense converters for our COR system product line and contribute to a first-class end product performance,” said Worksport CEO Steven Rossi.
The company’s COR battery system can be integrated into a pickup truck or recharged by any solar panel or wall outlet. By replacing the former silicon switch in the power converter with Infineon’s GaN power semiconductors and operating the transistors at higher switching frequency, Worksport will be able to reduce the battery system weight by 33 percent and system costs by up to 25 percent.
The working relationship with Infineon will also help Worksport to reduce CO2 in the manufacturing process. GaN is proving itself as a game-changing technology across many markets and applications. For example, in data centers, GaN solutions have a global energy savings potential of 21 TWh annually, 10 million tons of Carbon Dioxide (CO2) equivalent.
“In order to further drive electrification and decarbonization, the industry’s power designs require innovation,” said Johannes Schoiswohl, Business Line Head GaN Systems of Infineon’s Power & Sensor Systems Division. “With our GaN power semiconductors we enable Worksport to create the next generation portable power stations that users require.”
Infineon’s GS-065-060-5-B-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor. It offers very low junction-to-case thermal resistance for demanding high power applications such as on-board chargers, industrial motor drives and solar inverters. Furthermore, it features simple gate drive requirements (0 V to 6 V) and a transient tolerant gate drive (-20 / +10 V).
Original – Infineon Technologies
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JEDEC Solid State Technology Association announced the publication of JEP198: Guideline for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices. Developed by JEDEC’s JC-70.1 Gallium Nitride Subcommittee, JEP198 is available for free download from the JEDEC website.
JEP198 presents guidelines for evaluating the Time Dependent Breakdown (TDB) reliability of GaN power transistors. It is applicable to planar enhancement-mode, depletion-mode, GaN integrated power solutions, and cascode GaN power transistors.
This publication covers suggested stress conditions and related test parameters for evaluating the TDB reliability of GaN power transistors using the off-state bias. The stress conditions and test parameters for both High Temperature Reverse Bias Stress and Application Specific Stress-Testing are designed to evaluate the reliability of GaN transistors over their useful lifetime under accelerated stress conditions.
“We are becoming more dependent on power electronics in all facets of our daily lives. As such, the technologies behind those systems are advancing and so too must the device-specific qualification processes. The new GaN-focused Guideline for Reverse Bias Reliability Evaluation is a critical step toward achieving that goal,” said Ron Barr, VP of Quality and Reliability, Transphorm and Co-Chair of the Task Group 701_1.
“This was a collaborative effort conducted by both GaN semiconductor and end product manufacturers. I’m proud of the work the task group delivered. It is an important framework to ensure cross-industry uniformity that will, in the end, provide power system manufacturers the necessary confidence when designing with GaN devices.”
“With the rise of renewable energy and electrification of our lives, the efficiency of power semiconductors is becoming more critical. This is where GaN power semiconductors have proven to be a valuable technology. The Guideline for Reverse Bias Reliability Evaluation is another step in improving confidence in GaN Technology and the products that are on and being brought to market,” said Dr. Kurt Smith, VP of Reliability and Qualification at VisIC Technologies and Chair of JC-70.1.
“This document was developed through collaboration of the multi-corporation team of industry experts to represent the best practices for evaluating GaN devices. It was a long multi-year process to reach consensus and the team is to be commended for the quality document and all of the hard work that went into it.”
Original – JEDEC
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Navitas Semiconductor and SHINRY, global industry leader of on-board power supply and strategic supplier to Honda, Hyundai, BYD, Geely, XPENG, BAIC and many more leading automobile manufacturers, announced the opening of an advanced, joint R&D power laboratory to accelerate the development of New-Energy Vehicle (NEV) power systems enabled by Navitas’ GaNFast™ technology.
Next-gen gallium nitride (GaN) is replacing legacy silicon power chips due to superior high-frequency and high-efficiency characteristics. GaN delivers faster charging, faster acceleration and longer-range, accelerating market adoption of NEVs and the transition from fossil fuels to clean, renewable energy.
On January 16th, 2024, Peter (Jingjun) Chen, COO of SHINRY, along with Navitas’ Gene Sheridan, CEO and Navitas’ Charles (Yingjie) Zha, VP and GM plus other senior executives attended the joint lab’s opening ceremony at SHINRY headquarters in Shenzhen.
The joint lab accelerates development projects, with leading-edge GaN technology combining with innovative system-design skills and engineering talent to enable unprecedented high power density, lightweight, efficient designs that translate to faster charging and extended range, with faster time-to-market.
The joint lab brings together experienced, highly-professional engineers from Navitas and SHINRY to build efficient, collaborative R&D platforms. Navitas’ own dedicated EV system Design Center, located in Shanghai will provide comprehensive technical support for the joint lab.
Navitas will not only supply SHINRY with leading-edge, trusted power devices, but will also engage in system-level R&D from the initial stages of product specification and design, through to test platforms and customized packaging solutions. The result will be more efficient, higher power density, more reliable, and cost-effective power systems for NEVs.
“SHINRY always pursues technological innovation. As early as 2012, SHINRY began applying Silicon Carbide (SiC) MOS, and in 2019, SHINRY initiated research on the application of GaN and has been actively seeking strategic partners.” said Peter (Jingjun) Chen, COO of SHINRY.
“As an advanced supplier in the field, Navitas will assist in creating more advanced, energy-efficient, and higher-efficiency power system products. I believe the establishment of this joint lab will comprehensively accelerate the design and market launch of SHINRY’s products and further enhance the market competitiveness of SHINRY products.”
“We are excited to join with SHINRY to establish a new lab for next-gen power semiconductors, assisting SHINRY in creating advanced power systems.” said Gene Sheridan, Navitas’ co-founder & CEO. “SHINRY’s mission to change the way of travel aligns closely with Navitas’ Electrify Our World™ mission. We believe that through our joint efforts, leading GaN technologies will enter the power systems of NEVs for more end-users, contributing to the vigorous growth of the new energy industry.
Original – Navitas Semiconductor
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Acquired by Infineon Technologies in October 2023, GaN Systems has been recognized as the “Graduate Of The Year” by The Global Cleantech 100. The announcement was made at Cleantech Forum North America in San Francisco.
The award recognizes the exceptional contribution legacy GaN Systems has made to sustainable innovation and their successful management team as rated by the financial investors on the 80-member Cleantech Group Expert Panel. This 2024 award rounds out several years of recognition in GaN Systems’ sustainability journey which includes entry in to the Global Cleantech 100 Hall of Fame (1 of only 14 companies ever) and the 2023 Global Cleantech 100 winner (1 of only 100 companies globally in 2023).
The acquisition of GaN Systems has significantly accelerated Infineon’s gallium nitride (GaN) roadmap and further strengthens its leadership in power systems by offering a broad product portfolio combined with leading edge application know-how in the development of GaN-based solutions. Infineon’s expertise and in-depth knowledge in GaN paves the way for more energy-efficient and CO 2-saving technology solutions that support decarbonization.
“My congratulations go out to all legacy GaN Systems employees for this recognition and winning multiple Cleantech awards. We are glad to have these smart and curious minds on board at Infineon,” said Adam White, Division President at Power & Sensor Systems at Infineon. “Thanks to unrivalled R&D resources, a comprehensive understanding of applications and a large number of customer projects, Infineon now leverages the full potential of GaN Systems to become a leading GaN Powerhouse fostering the transformation towards green energy.”
Cleantech® Group is a leading global authority on global cleantech innovation. The Global Cleantech 100 program has been running since 2009. This highly anticipated annual report publishes a list of companies with the most promising ideas in cleantech.
Original – Infineon Technologies
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Infineon Technologies AG announced its joint Innovation Application Center in Shenzhen with Anker Innovations, a global leader in charging technology. With the center already fully operating, it is paving the way for more energy-efficient and CO2-saving charging solutions that support decarbonization.
Driven by the growing consumer demand for faster charging solutions due to an increasing usage of mobile devices, laptops and other battery-powered devices, the idea of establishing an Anker-Infineon Innovation Application Center dated back to 2021. After two years of preparation, the joint lab now serves as R&D hub for industry experts to develop power-delivery (PD) fast charging solutions with higher power density, mainly based on Infineon’s next-generation Hybrid Flyback (HFB) controller product family and the CoolGaN™ IPS for fast chargers above 100W.
Anker has already brought several successful products to the market, such as the industry-leading 100W+ fast charger device powered by Infineon’s CoolGaN in 2022. With the Innovation Application Center Anker and Infineon will even shorten the application cycle and accelerate the time to market for future products.
“Anker is an important customer for Infineon,” said Christian Burrer, Vice President of Systems & Application Marketing of Power & Sensor Systems Division at Infineon Technologies. “We have already started a strong cooperation in the charging field, with product and system solutions covering several Infineon product lines. In the field of PD charging, we provide our customers a comprehensive product portfolio, including state-of-the-art power controllers, first-class switching power supplies, leading silicon MOSFET and GaN transistor performance, and more.”
Beyond charging solutions, the joint lab is focusing on a more diversified range of consumer applications, driven by Infineon’s expertise in wide-bandgap materials such as gallium nitride (GaN). The acquisition of GaN Systems in 2023 has significantly accelerated Infineon’s GaN roadmap and further strengthens its leadership in power systems through mastery of all relevant power semiconductor technologies.
“In 2023, Anker achieved success in many markets such as China and Europe. This would not have been possible without Infineon’s GaN technology solutions and the strong collaboration between our companies. We look forward to even intensifying our partnership with Infineon”, said by Kang Xiong, General Manager of the charging business unit at Anker Technologies.
Original – Infineon Technologies
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Transphorm, Inc. announced availability of two new SuperGaN® devices in a 4-lead TO-247 package (TO-247-4L). The new TP65H035G4YS and TP65H050G4YS FETs offer a 35 mOhm and 50 mOhm on resistance respectively, complete with a kelvin-source terminal that gives customers versatile switching capabilities with even lower energy losses.
The new products will run on Transphorm’s well-established GaN-on-Silicon substrate manufacturing process that is cost-effective, reliable, and well-suited for high volume manufacturing on silicon production lines. The 50 mOhm TP65H050G4YS FET is currently available while the 35mOhm TP65H035G4YS FET is sampling and slated for release in calendar Q1’2024.
Transphorm’s 4-lead SuperGaN devices can serve as an original design-in option or as a drop-in replacement for 4-lead silicon and SiC solutions supporting power supplies at 1 kilowatt and up in a wide range of data center, renewables, and broad industrial applications. As noted, the 4-lead configuration offers flexibility to users for further improved switching performance.
In a hard-switched synchronous boost converter, the 35 mOhm SuperGaN 4-lead FET reduced losses by 15 percent at 50 kilohertz (kHz) and by 27 percent at 100 kHz when compared to a SiC MOSFET device with a comparable on resistance.
Transphorm’s SuperGaN FETs are known for delivering differentiating advantages such as:
- Industry-leading robustness with a +/- 20 V gate threshold and a 4 V noise immunity.
- Easier designability by reducing the amount of circuitry required around the device.
- Easier drivability as FETs can pair with well-known, off-the shelf drivers common to silicon devices.
The TO-247-4L devices offer the same robustness, designability, and drivability with the following core specifications:
Part Number Vds (V) min Rds(on) (mΩ) typ Vth (V) typ Id (25°C) (A) max Package Variation TP65H035G4YS 650 35 3.6 46.5 Source TP65H050G4YS 650 50 4 35 Source “We continue to expand our product portfolio to bring to market GaN FETs that help customers leverage our SuperGaN platform performance advantages in whatever design requirement they may have,” said Philip Zuk, Senior Vice President, Business Development and Marketing, Transphorm.
“The four-lead TO-247 package provides flexibility for designers and customers seeking even greater power system loss reductions with little to no design modifications on silicon or silicon carbide systems. It’s an important addition to our product line as we ramp into higher power applications.”
Original – Transphorm
