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Infineon Technologies AG announced that its CoolSiC™ 2000 V modules have been selected by Daihen Corporation for their innovative unit-type power conditioners for grid storage batteries. In the journey towards reducing carbon emissions, both grid storage batteries and the power conditioners that are linked to them play a vital role in facilitating the wider adoption of renewable energy sources like solar and wind power generation.
There has been an increasing demand for higher voltage storage batteries and power conditioners to enhance the effectiveness of power generation, storage, and transmission. Moreover, with the expansion of storage battery systems on a larger scale, finding suitable locations and minimizing construction costs have emerged as significant challenges.
The unit-type power conditioner for grid storage batteries launched by Daihen in March 2024 is the first product in the industry to achieve connection to storage batteries at a high DC link voltage of 1500 V. The higher voltage enables the product to be used with large-capacity storage battery facilities, which has resulted in a 40% reduction in the footprint of grid storage batteries compared to the conventional product.
The high power density is achieved by using Infineon’s 62 mm CoolSiC MOSFET 2000 V module (FF3MR20KM1H). In addition to the characteristics of SiC that enable high voltage, better thermal dissipation and high power density, Infineon’s SiC products feature M1H trench technology that increases the gate drive voltage range and provides high robustness and reliability against gate voltage spikes. Infineon was the pioneer in the industry to introduce the 2000 V class for a SiC module. This innovation has been instrumental in simplifying the inverter circuit configuration. Furthermore, the optimized 62 mm package has led to a substantial reduction in system size, contributing to enhanced efficiency and performance.
Mr. Akihiro Ohori, General Manager, Development Department, Energy Management System Division, Daihen, said, “In order to increase the voltage of power conditioners, the circuit configuration of conventional 1200 V devices had become complicated. However, by adopting Infineon’s 2000 V SiC modules, we were able to achieve a simplified circuit configuration and control design, thereby reducing development resources and the footprint.”
Masanori Fujimori, Marketing Director of the Industrial & Infrastructure Segment at Infineon Technologies Japan, said, “We are very pleased that our pioneering CoolSiC 2000 V module has contributed to the development of the industry’s highest power density power conditioners for grid storage batteries. We believe that Infineon’s SiC technology will address the need for higher efficiency in energy storage systems and will greatly contribute to the growth of renewable energy.”
Original – Infineon Technologies
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Power Master Semiconductor has released 2nd generation of the 1200V eSiC MOSFET to meet the requirements of higher efficiency, high power density, robust reliability, and ruggedness in various applications such as DC EV charging stations, solar inverters, energy storage systems (ESS), motor drives and industrial power supplies. 1200V eSiC MOSFETs offer significant system advantages such as higher power density, efficiency and less cooling effort due to its much lower power losses.
Therefore, SiC MOSFETs are gaining popularity especially for renewable energy systems, EV charging systems that required higher power density, efficiency and robustness. DC EV charging station is level-3 charger and its power level is increasing by modular configuration as demand of faster charging time and higher battery capacity of EV. DC EV charging provides a mostly constant current output for wide DC output voltage range (200V to 900V) and load profile.
The new generation of 1200V eSiC MOSFET, Gen2 improved key FOM characteristics such as gate charge (QG), stored energy in output capacitance (EOSS), reverse recovery charger (QRR) and output charge (QOSS) by up to 30% compared to previous generation. This new generation SiC MOSFET technology offers significant system advantages such as smaller, lighter, higher efficiency, and less cooling effort thanks to its much lower power losses in various power conversion applications.
1200V eSiC MOSFET Gen2 offer excellent switching performance and 100% tested avalanche capability. It achieved 44% lower switching loss compared to the previous generation by extremely low miller capacitance (QGD).
Power Master Semiconductor is steadfastly committed to developing cutting-edge power device solutions that prioritize efficiency and sustainability,” said Namjin Kim, Sr. Director Sales & Marketing. “The introduction of our new generation of 1200V eSiC MOSFET marks a substantial leap forward in facilitating the development of cleaner, more efficient power systems. We are confident that the 1200V eSiC Gen2 MOSFET will play a transformative role in high-performance applications.
Original – Power Master Semiconductor
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In the face of escalating climate crises and a dramatic rise in global energy demands, governments and industries are committing to ambitious climate goals aimed at mitigating environmental impact and securing a sustainable future. Key to these efforts is the transition to electrification to reduce carbon emissions and embrace renewable energy resources.
In a significant step towards accelerating this global transition, onsemi introduced its latest generation silicon carbide technology platform, EliteSiC M3e MOSFETs. The company also disclosed plans to release multiple additional generations through 2030.
“The future of electrification is dependent on advanced power semiconductors. Today’s infrastructure cannot keep up with the world’s demands for more intelligence and electrified mobility without significant innovations in power. This is critical to the ability to achieve global electrification and stop climate change,” said Simon Keeton, group president, Power Solutions Group, onsemi. “We are setting the pace for innovation, with plans to significantly increase power density in our silicon carbide technology roadmap through 2030 to be able to meet the growing demands for energy and enable the global transition to electrification.”
The EliteSiC M3e MOSFETs will play a fundamental role in enabling the performance and reliability of next-generation electrical systems at lower cost per kW, thus influencing the adoption and effectiveness of electrification initiatives. With the ability to operate at higher switching frequencies and voltages while minimizing power conversion losses, this platform is essential for a wide range of automotive and industrial applications such as electric vehicle powertrains, DC fast chargers, solar inverters and energy storage solutions.
Additionally, the EliteSiC M3e MOSFETs will enable the transition to more efficient, higher-power data centers to meet the exponentially increasing energy demands that power a sustainable artificial intelligence engine.
Through onsemi’s unique design engineering and manufacturing capabilities, the EliteSiC M3e MOSFETs achieve a significant reduction in both conduction and switching losses on the trusted and field-proven planar architecture. Compared to previous generations, the platform can reduce conduction losses by 30% and turn-off losses by up to 50%.
By extending the life of SiC planar MOSFETs and delivering industry-leading performance with EliteSiC M3e technology, onsemi can ensure the robustness and stability of the platform, making it a preferred choice for critical electrification applications
The EliteSiC M3e MOSFETs also offer the industry’s lowest specific on-resistance (RSP) with short circuit capability which is critical for the traction inverter market that dominates SiC volume. Packaged in onsemi’s state-of-the-art discrete and power modules, the 1200V M3e die delivers substantially more phase current than previous EliteSiC technology, resulting in approximately 20% more output power in the same traction inverter housing. Conversely, a fixed power level can now be designed with 20% less SiC content, saving costs while enabling the design of smaller, lighter and more reliable systems.
Additionally, onsemi provides a broader portfolio of intelligent power technologies including gate drivers, DC-DC converters, e-Fuses and more to pair with the EliteSiC M3e platform. The end-end onsemi combination of optimized, co-engineered power switches, drivers and controllers enable advanced features via integration, lowering overall system cost.
Global energy demands are projected to soar over the next decade, making the need for increased power density in semiconductors paramount. onsemi is leading innovation across its silicon carbide roadmap – from die architectures to novel packaging techniques – that will continue to address the general industry demand for increased power density.
With each new generation of silicon carbide, cell structures will be optimized to efficiently push more current through a smaller area, increasing power density. When coupled with the company’s advanced packaging techniques, onsemi will be able to maximize performance and reduce package size.
By applying the concepts of Moore’s Law to the development of silicon carbide, onsemi can develop multiple generations in parallel and accelerate its roadmap to bring several new EliteSiC products to market at an accelerated pace through 2030.
“We are applying our decades of experience in power semiconductors to push the boundaries of speed and innovation in our engineering and manufacturing capabilities to meet the rising global energy demands,” said Dr. Mrinal Das, senior director of technical marketing, Power Solutions Group, onsemi. “There is a huge technical interdependency between the materials, device and package in silicon carbide. Having full ownership over these key aspects allows us to have control over the design and manufacturing process and bring new generations to market much faster.”
The EliteSiC M3e MOSFET in the industry-standard TO-247-4L package is now sampling.
Original – onsemi
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Infineon Technologies AG has signed a Memorandum of Understanding with Amkor Technology, Inc. with a joint commitment to stimulate decarbonization and sustainability strategies across the supply chain.
Expanding their partnership towards sustainability is the next step in the sustainability journey of both companies. Infineon and Amkor intend to fully leverage their classical Outsourced Semiconductor Assembly and Test (OSAT) business relationship in order to effectively tackle emissions along their supply chain. In April, both companies announced to operate a dedicated packaging and test center at Amkor’s manufacturing site in Porto, Portugal.
As part of the cooperation for climate protection, Infineon and Amkor will actively engage with common suppliers to help them develop and implement effective decarbonization strategies. This will involve workshops, meetings, and the sharing of best practices and learnings related to decarbonization. The aim is to identify areas for improvement and support suppliers in setting science-based emissions reduction targets in line with the Science Based Targets initiative. Both companies are committed to providing ongoing guidance, fostering exchange, and tracking progress to drive continuous improvement across the common supply chain.
“Infineon has made excellent progress towards its aim to become CO 2-neutral for scope 1 and 2 by 2030, as the company more than halved its emissions while doubling the revenue since 2019. Supply-chain-related Scope-3-emissions represent the highest share of total emissions at Infineon and are the hardest ones to minimize,” said Angelique van der Burg, Chief Procurement Officer at Infineon. “That makes it even more important to include them in our efforts. But no one can do it alone. We need to actively collaborate and drive innovation with our suppliers if we want to effectively reduce CO 2 emissions. This is of ample importance not only for Infineon and Amkor, but also for society at large. Therefore, we are happy to join forces with Amkor on this.”
“Amkor is excited to deepen its partnership with Infineon through this strategic collaboration. Addressing Scope 3 is the most challenging part of the decarbonization journey, and we anticipate mutual benefits from this collective work in undertaking the challenge,” said Giel Rutten, President and Chief Executive Officer of Amkor. “This initiative is pivotal in achieving Amkor’s goal to reach net-zero emissions by 2050 by strengthening supply chain engagement through joint efforts. We look forward to collaborating with suppliers and invite them to join our endeavor to set ambitious science-based targets. Together, we are committed to driving positive environmental impact across our value chain.”
To support Infineon’s science-based target commitment and enhance the collaboration with suppliers, Infineon introduced a supplier engagement program in 2023. Since then, the company has been working with more than a hundred suppliers to set and implement science-based targets. The partnership between Amkor and Infineon provides an impetus for the strategy of both companies to make science-based targets the standard for ambitious climate strategies in the semiconductor industry.
Original – Infineon Technologies
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Toshiba Electronics Europe GmbH added two new 150V N-channel power MOSFET products based upon their latest generation U-MOS X-H Trench process. The TPH1100CQ5 and TPH1400CQ5 devices are designed specifically for use in high-performance switching power supplies, such as those used in data centres and communication base stations as well as other industrial applications.
With a maximum drain-source voltage (VDSS) rating of 150V and drain current (ID) handling 49A (TPH1100CQ5) and 32A (TPH1400CQ5), the new devices feature a maximum drain-source on-resistance RDS(ON).
The new products offer improved reverse recovery characteristics that are critical in synchronous rectification applications. In the case of TPH1400CQ5, the reverse recovery charge (Qrr) is reduced by approximately 73% to 27nC (typ.) and the reverse recovery time (trr) of 36 ns (typ.) is approximately 45% faster compared with Toshiba’s existing TPH1400CQH, which offers the same voltage and RDS(ON).
Used in synchronous rectification applications, the TPH1400CQ5 reduces the power loss of switching power supplies and helps improve efficiency. If the device is used in a circuit that does not operate in reverse recovery mode, the power loss is equivalent to that of the TPH1400CQH.
When used in a circuit that operates in reverse recovery mode, the new products reduce spike voltages generated during switching, helping to improve EMI characteristics of designs, and reducing the need for external filtering. The devices are housed in a versatile, surface-mount SOP Advance(N) package measuring just 4.9mm x 6.1mm x 1.0mm.
To support designers, Toshiba has developed a G0 SPICE model for rapid verification of the circuit function as well as highly accurate G2 SPICE models, for accurate reproduction of transient characteristics.
Shipments of the new devices start today, and Toshiba will continue to expand their lineup of power MOSFETs that help improve equipment efficiency.
Original – Toshiba
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GlobalWafers Co., Ltd. announced that GWC subsidiaries, GlobalWafers America (GWA) and MEMC LLC, have signed a non-binding preliminary memorandum of terms (PMT) with the U.S. Department of Commerce for up to $400 million in direct funding under the CHIPS and Science Act to support GWC’s construction of advanced silicon wafer manufacturing facilities in Sherman, Texas and St. Peters, Missouri.
When complete, the Sherman, Texas complex will be the first fully integrated advanced silicon wafer production line built in the United States in over 20 years. GWA President Mark England remarked, “With the support of the Biden Administration, we are honored to be bringing to American shores the world’s most cutting-edge 300mm semiconductor wafer technology, filling what the White House has called a “key vulnerability” within the U.S. semiconductor supply chain. GlobalWafers is fully committed to the U.S. market, and we are excited to be playing a defining role in the nation’s semiconductor rebirth.”
With this proposed investment, GWA will also become a key node in Texas’s rapidly developing Silicon Prairie ecosystem. England added, “The state of Texas and the North Texas Texoma region have welcomed GWA with open arms and investment incentives. We are proud to reciprocate their hospitality by bringing to Sherman 1200 construction jobs and 750 high paying manufacturing jobs ranging from production operators to technicians and engineers between now and 2026.” As the only confirmed advanced node wafer manufacturer now investing in the United States, GWA will reduce the United States’ complete dependence on overseas manufacturing facilities to provide wafers for advanced chips.
Already home to semiconductor pioneer Texas Instruments (TI), the GlobalWafers investment will help make North Texas the most unique semiconductor ecosystem in the country as headquarters to the nation’s leading analogue and embedded semiconductor company AND home to the country’s only 300-mm silicon wafer manufacturer for advanced chips. TI Vice President of Worldwide Procurement and Logistics Rob Simpson congratulated both GlobalWafers and the U.S. Department of Commerce on this announcement, noting: “TI welcomes the investment in GlobalWafers America in North Texas, as it will be a very meaningful addition to the growing semiconductor ecosystem here.”
“Texas continues to lead the country as the Best State for Business,” said Governor Greg Abbott. “Companies like GlobalWafers America – the only advanced node wafer manufacturer in the U.S. – are investing in Texas because of our world-class business climate, business-friendly regulations, and young, growing, and highly skilled workforce. GlobalWafers is a crucial partner in our efforts to remain the nation’s No. 1 state for semiconductor manufacturing, and I thank them for choosing North Texas for their new facility.”
In support of national economic and resilience objectives, GWC is committed to developing in the United States a broad range of next-generation wafer technology. This includes establishing a Research and Development Center of Excellence in Sherman as well as building the United States’ only 300-mm manufacturing facility for advanced Silicon-On-Insulator (SOI) wafers at GWC’s MEMC LLC subsidiary in St. Peters, Missouri where the project brings an additional 500 construction jobs and 130 high quality manufacturing jobs.
As the only U.S. source of 300-mm SOI wafers, the MEMC investment will add a new level of resilience to the U.S. supply chain. On this point, Ashlie Wallace, Senior Vice President of Global Supply Chain at GlobalFoundries observed, “GlobalFoundries applauds the proposed CHIPS direct funding to GlobalWafers, a longstanding strategic partner of ours which provides an important domestic supply of silicon wafers critical for the essential semiconductors we manufacture.” Wallace added, “Federal investments across the U.S. semiconductor ecosystem are strengthening our industry and the supply chains that are vital to our customers and the economy.”
Noting the significance of this proposed funding to U.S. supply chain resilience efforts, U.S. Secretary of Commerce Gina Raimondo said, “President Biden is restoring our leadership in the entire semiconductor supply chain – from materials to manufacturing, to R&D. With this proposed investment, GlobalWafers will play a crucial role in bolstering America’s semiconductor supply chain by providing a domestic source of silicon wafers that are the backbone of advanced chips. As a result of this proposed investment, the Biden-Harris Administration is helping to secure our supply chains, which will create over 2,000 jobs across Texas and Missouri and ultimately lower costs and improve economic and national security for Americans.”
In addition to the direct grant funding announced today, GWC plans to apply for the U.S. Treasury Department’s Advanced Manufacturing Investment Credit (AMIC) of up to 25% of qualified expenditures at the GWA and MEMC LLC facilities.
From Hsinchu, Taiwan, GlobalWafers Chairwoman and CEO Doris Hsu expressed her personal thanks to the U.S. Congress, the Department of Commerce, and the Department of Treasury for CHIPS Act support: “Thanks to U.S. Government support, GlobalWafers is pleased to be a key node in the U.S. semiconductor supply chain. I’d like to particularly thank Secretary Raimondo for her partnership and vision throughout this journey. From day one, her encouragement gave me confidence that U.S. Government support for our investment would be significant and strategic to U.S. objectives.”
As a key ESG imperative, GlobalWafers companies across the globe practice green manufacturing and constantly seek to improve energy efficiency, water conservation, waste management and air pollution control. When at full ramp, GWC’s new and expansion facilities in Sherman and St. Peters will recycle up to half of the water used in production and have forward plans to utilize 100% renewable energy to manufacture the world’s most advanced silicon wafers. The GlobalWafers family of companies is committed to reducing our environmental footprint to the fullest extent possible.
GlobalWafers Co., Ltd., the world’s third largest supplier of semiconductor wafers, maintains 18 manufacturing and operational sites spanning three continents and nine countries. The company is a global leader in semiconductor technology, providing innovative and advanced technology solutions to leading chip manufacturers to transform lives around the world.
Original – GlobalWafers
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Toshiba Electronic Devices & Storage Corporation launched 650V N-channel power MOSFETs “TK068N65Z5, TK095E65Z5, TK095A65Z5, TK095V65Z5, TK115E65Z5, TK115A65Z5, TK115V65Z5 and TK115N65Z5” and added them to the lineup of Toshiba’s latest-generation DTMOSVI series with high-speed diodes (DTMOSVI (HSD)) that uses super junction structure and is suitable for high-efficiency switching power supplies for data centers and power conditioners for photovoltaic generators. Packages of the new products are TO-247, TO-220SIS, TO-220 and DFN8×8.
The new products with the DTMOSVI (HSD) process use high-speed diodes to improve the reverse recovery characteristics important for bridge circuit and inverter circuit applications. Against Toshiba’s existing product TK090A65Z of the standard type DTMOSVI, the new product TK095A65Z5 achieves an approximately 65% reduction in reverse recovery time (trr), and an approximately 88% reduction in reverse recovery charge (Qrr) (measurement conditions: -dIDR/dt=100A/μs).
In addition, the DTMOSVI (HSD) process improves on the reverse recovery characteristics of Toshiba’s existing products DTMOSIV series with high-speed diodes (DTMOSIV (HSD)), and has a lower drain cut-off current at high temperatures. Furthermore, the figure of merit “drain-source On-resistance × gate-drain charge” is also lower.
The high temperature drain cut-off current of the new product TK095A65Z5 is approximately 91% lower, and the drain-source On-resistance × gate-drain charge approximately 70% lower, than in Toshiba’s existing product TK35A65W5. This advance will cut equipment power loss and help to improve efficiency.
A reference design, “1.6kW Server Power Supply (Upgraded)“, that uses the same series product TK095N65Z5 is available on Toshiba’s website.
Toshiba also offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available.
Toshiba also will continue to expand its lineup of the DTMOSVI series. This will enhance switching power supply efficiency, contributing to energy-saving equipment.
Applications
Industrial equipment
- Switching power supplies (data center servers, communications equipment, etc.)
- EV charging stations
- Power conditioners for photovoltaic generators
- Uninterruptible power systems
Features
- MOSFETs with high-speed diodes in the latest-generation DTMOSVI series
- Reverse recovery time due to high-speed diodes:
TK068N65Z5 trr=135ns (typ.)
TK095E65Z5, TK095A65Z5, TK095V65Z5 trr=115ns (typ.)
TK115E65Z5, TK115A65Z5, TK115V65Z5, TK115N65Z5 trr=110ns (typ.) - High-speed switching time due to low gate-drain charge:
TK068N65Z5 Qgd=22nC (typ.)
TK095E65Z5, TK095A65Z5, TK095V65Z5 Qgd=17nC (typ.)
TK115E65Z5, TK115A65Z5, TK115V65Z5, TK115N65Z5 Qgd=14nC (typ.)
Original – Toshiba
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AIXTRON SE supports Nexperia B.V. in the ramp-up of its 200mm volume production for silicon carbide (SiC) and gallium nitride (GaN) power devices. With the new G10-SiC for the 200mm SiC volume ramp, Nexperia is placing a repeat order for AIXTRON SiC tools. This is complemented by an order for AIXTRON G10-GaN tools.
Both GaN and SiC epitaxial films are essential for the design of next-generation energy-efficient Field-Effect (FET) or Metal-Oxide-Field Effect (MOSFET) transistors to be used in various power conversion applications ranging from data centers and solar inverters in electric vehicles (EV) or trains.
Nexperia has decades of experience in the development of power devices, achieving more than 2.1 billion USD in revenue in 2023. After releasing its first GaN FET device in 2019 and its first SiC MOSFET in 2023, Nexperia continues to expand its portfolio with new high-reliability and power-efficient devices.
Nexperia, headquartered in Nijmegen (Netherlands), operates front-end factories in Hamburg (Germany) and Greater Manchester (England). The AIXTRON epitaxy systems will be installed at Nexperia’s wafer fab in Hamburg (Germany), further strengthening the semiconductor production capabilities in the region. Nexperia’s Hamburg site produces approximately 100 billion discrete semiconductors annually, accounting for about a quarter of the global production of this type of products.
“We are honored to strengthen our alliance with Nexperia, a pivotal player in the semiconductor landscape. Our G10 epitaxy solutions are at the heart of this collaboration, bolstering Nexperia’s growth strategies and enabling the high-volume production of wide bandgap semiconductors for commercial applications. Together, we are setting the pace for the industry’s transition to more energy-efficient SiC and GaN solutions”, said Dr. Felix Grawert, CEO and President of AIXTRON SE.
“As we advance our technological capabilities and market presence in high-power semiconductor production, our strategic partnership with AIXTRON is transformative. Integrating the G10 systems will significantly enhance our wide bandgap technology development and production capabilities. We build on AIXTRON’s proven uniformity and leverage the additional productivity gains of AIXTRON’s G10 tools to scale up our production efficiently and cost-effectively. With the new G10 tools in our Hamburg facility, we are poised for further advancements in our production capabilities,” said Achim Kempe, COO at Nexperia B.V.
Original – AIXTRON
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Aehr Test Systems announced financial results for its fiscal 2024 fourth quarter and full year ended May 31, 2024.
Fiscal Fourth Quarter Financial Results:
- Net revenue was $16.6 million, compared to $22.3 million in the fourth quarter of fiscal 2023
- GAAP net income was $23.9 million, or $0.81 per diluted share, which includes the impact of a tax benefit resulting from the release of the Company’s full income tax valuation allowance of approximately $20.8 million, compared to GAAP net income of $6.1 million, or $0.21 per diluted share, in the fourth quarter of fiscal 2023.
- Non-GAAP net income was $24.7 million, or $0.84 per diluted share, which includes the tax benefit and excludes acquisition related costs and the impact of stock-based compensation, compared to non-GAAP net income of $6.8 million, or $0.23 per diluted share, in the fourth quarter of fiscal 2023.
- Bookings were $4.0 million for the quarter
- Backlog as of May 31, 2024, was $7.3 million. Effective backlog, which includes all orders received since the end of the fourth quarter, is $20.8 million.
- Total cash and cash equivalents as of May 31, 2024 were $49.2 million, up from $47.6 million at February 29, 2024
Fiscal Year Financial Results:
- Net revenue was a record $66.2 million, compared to $65.0 million in fiscal 2023
- GAAP net income was $33.2 million, or $1.12 per diluted share, which includes the impact of a tax benefit resulting from the release of the Company’s full income tax valuation allowance of approximately $20.8 million recognized in the fourth quarter, compared to GAAP net income of $14.6 million, or $0.50 per diluted share, in fiscal 2023.
- Non-GAAP net income, which includes the tax benefit and excludes acquisition related costs and the impact of stock-based compensation, was $35.8 million, or $1.21 per diluted share, compared to non-GAAP net income of $17.3 million, or $0.59 per diluted share, in fiscal 2023.
An explanation of the use of non-GAAP financial measures and a reconciliation of Aehr’s non-GAAP financial measures to the most directly comparable GAAP financial measures can be found in the accompanying tables.
Gayn Erickson, President and CEO of Aehr Test Systems, commented:
“Our full-year revenue and net income results exceeded our previously provided guidance and surpassed analyst consensus. Although we saw customer pushouts of silicon carbide devices due to slower electric vehicle (EV) demand in the second half of our fiscal year, we achieved another record year for annual revenue for Aehr.
“Wafer level test and burn-in of silicon carbide power semiconductors used in EVs was a key driver of our business in the last year, and we anticipate silicon carbide will continue to be a key contributor to revenue in the current fiscal year and beyond. To that point, we announced today that we received $12.7 million in orders from one of our silicon carbide test and burn-in customers for FOX WaferPak™ full wafer Contactors to support production of silicon carbide power devices for electric vehicles to be delivered over the next three months.
“The silicon carbide market continues to be an enormous opportunity for Aehr as we see more auto suppliers committed to silicon carbide in their EVs, as well as roadmaps that are based on modules for their electric motor power inverters. By 2030, battery EVs are forecasted to more than triple last year’s sales to 30 million or 30% of total vehicles manufactured worldwide.
“We remain actively engaged with a significant number of new silicon carbide device and module suppliers and seek to meet their anticipated capacity coming online beginning in 2025. We are also seeing growing demand for silicon carbide devices beyond the EV market, such as solar, data center, and other industrial applications for power conversion. We believe we are well positioned to continue to grow our business in silicon carbide, and we expect to receive first orders from a significant number of additional silicon carbide customers by the end of this fiscal year.
“We are also seeing traction with several emerging opportunities for our test and burn-in solutions in new target markets and expect bookings and revenue across a much broader range of customers and markets this fiscal year.
“One of the key new market opportunities we are focusing on is the growing demand for Artificial Intelligence (AI) processor test and burn-in at both the wafer level and the packaged part level.
“We are currently working with an AI accelerator company and have secured a commitment from them to evaluate our FOX solution for use in production wafer level burn-in of their high-power processors. Upon successful demonstration of wafer level test results and throughput, we expect they will utilize our new high-power FOX-XP systems for production of their next generation AI processors, starting this fiscal year.
“We also announced today in a separate press release our acquisition of Incal Technology, a manufacturer of highly acclaimed reliability test and burn-in solutions of a wide range of semiconductor devices and markets, with a new product family of ultra-high-power test solutions for AI accelerators, graphics & network processors, and high-performance computing processors. We believe that between wafer level and package part, the reliability test and production burn-in market for AI processors exceeds $100 million annually, and with this combined product portfolio we believe we have the opportunity to capture a meaningful share of the market this fiscal year.
“This past year we announced our first order for a FOX wafer level test and burn-in system for gallium nitride (GaN) devices. While silicon carbide will be the semiconductor material of choice for EV traction inverters, GaN is expected to gain significant penetration in the on-board charging market as well as other automotive, solar, and data center power conversion applications. We are working with several of the GaN market leaders, and received a significant number of WaferPak orders throughout the year for gallium nitride reliability test and qualification. We have now received our first forecasts for wafer level production burn-in systems to be delivered during this fiscal year. We continue to be encouraged by this market and believe it will be significant in market size for semiconductors and has the potential to be a solid market opportunity for Aehr’s solutions.
“Within the silicon photonics market, we shipped the first order from a major silicon photonics customer for the new high-power configuration of our FOX-XP system this last fiscal year. This new configuration expands our market opportunity by enabling cost-effective volume production test of wafers of next-generation photonic ICs that are targeted for use in the new optical I/O or co-packaged optics market. Nvidia, AMD, and Intel have all discussed the potential for adding optical chip-to-chip communication for performance improvement and power savings for AI processors and High-Performance Computing chips.
“Looking ahead, we believe Aehr has significant opportunities for growth in fiscal 2025 and beyond with our industry-leading product portfolio, and we look forward to updating you on our progress throughout the year as we seek to capitalize on these exciting new opportunities.”
Fiscal 2025 Financial Guidance:
For the fiscal year ending May 30, 2025, Aehr expects total revenue of at least $70 million and net profit before taxes of at least 10% of revenue.
Original – Aehr Test Systems
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Mouser Electronics, Inc., the authorized global distributor with the newest electronic components and industrial automation products, announced a global distribution agreement with Sanan Semiconductor, a leading manufacturer of silicon carbide (SiC) power products, including industrial and automotive SiC Schottky barrier diodes (SBDs) and SiC MOSFETs. Sanan Semiconductor offers flexible solutions for high-power and high-reliability applications, such as server power supplies, photovoltaic inverters, electric vehicles, and home appliances.
Sanan Semiconductor’s industrial SiC Schottky barrier diodes offer higher efficiency, greater heat dissipation capability, and lower losses than traditional silicon-based solutions. These features enable higher power density and longer-term reliability in system designs.
These devices show no recovery at turn-off and allow a low leakage current with a reverse voltage of up to 1200V. Utilizing an innovative merged PiN Schottky (MPS) structure and substrate thinning technology, these SiC SBDs offer compelling price performance while meeting the industry’s most stringent reliability requirements. Sanan Semiconductor’s SiC SBDs also maintain consistent performance over a broad temperature range, simplifying system design.
Sanan Semiconductor’s automotive SiC Schottky barrier diodes are RoHS-compliant and AEC-Q101 qualified, making them ideal for use in automotive applications. These automotive SiC components offer superior power handling due to their high voltage and current ratings, enabling high frequency and high-temperature operation, which boosts power density, efficiency, and system compactness. These devices offer a greatly reduced capacitive charge (Qc), which minimizes reverse recovery loss and aids in fast switching.
Both grades of SiC SBDs are offered in a diverse range of packaging options to suit every need. From standard Transistor Outline (TO) packages to Surface Mount Device (SMD) solutions and bare die, Sanan Semiconductor’s packaging options are engineered for versatility and performance.
As a global authorised distributor, Mouser offers the world’s widest selection of the newest semiconductors and electronic components — in stock and ready to ship. Mouser’s customers can expect 100% certified, genuine products that are fully traceable from each of its manufacturer partners.
To help speed up the design process for customers, Mouser’s website hosts an extensive library of technical resources, including a Technical Resource Centre, along with product data sheets, supplier-specific reference designs, application notes, technical design information, engineering tools and other helpful information.
Original – Mouser Electronics
