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Magnachip Semiconductor Corporation announced the launch of two new 6th-generation (Gen6) 650V Insulated Gate Bipolar Transistors (IGBTs), specifically designed for solar inverters.
The newly introduced Gen6 IGBTs, incorporating polyimide insulation layers, demonstrate outstanding performance by passing high-voltage, high-humidity and high-temperature reverse bias (HV-H3TRB) tests. These products offer dependable reliability in industrial equipment operating under extreme conditions, including elevated temperatures and humidity.
Additionally, integrated fast recovery anti-parallel diodes ensure swift removal of residual current, reducing switching losses in applications while supporting an operating temperature range of up to 175°C.
Of the two new products, the MBQ40T65S6FHTH features exceptional conduction loss reduction. Compared to the previous generation, this IGBT decreases conduction loss by approximately 25% and boosts system efficiency by about 15% in 15kW solar inverters.
The MBQ40T65S6FSTH is engineered to significantly reduce switching loss. It cuts switching loss by 15% and conduction loss by approximately 8% compared to its predecessor, enhancing system efficiency by about 11% in 3kW solar inverters.
With these performance upgrades, the new IGBTs are suitable for applications that demand high reliability and efficiency, such as solar inverters, industrial motor drives, power supply units and uninterruptible power supplies.
According to market research firm Omdia, the discrete IGBT market in the renewable energy sector is expected to grow at a compound annual growth rate of 19% from 2025 to 2028.
“In the second half of this year, we plan to introduce a broader range of Gen6 650V IGBT products with current ratings from 5A to 75A, as part of our strategy to significantly expand our pipeline of new-generation Power products,” said YJ Kim, CEO of Magnachip. “We have a proven track record in Power with nearly 1,000 chip designs and the manufacture and shipment of more than 23 billion units since we entered the Power business in 2007. Moving forward, we will continue to strengthen our IGBT product family to drive innovation in renewable energy, automotive, industrial and AI applications.”
Original – Magnachip Semiconductor
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Magnachip Semiconductor Corporation announced a significant expansion of its product lineup with the launch of 25 new 6th-generation (Gen6) SJ MOSFETs (Super Junction Metal-Oxide-Semiconductor Field-Effect Transistors).
The switching speeds of the newly developed Gen6 SJ MOSFETs have been improved by approximately 23%, reducing the RSP of applications by about 40% compared to the previous generation, thereby enhancing the Figure of Merit by 40%.
Additionally, a Zener diode is embedded between the gate and source to enhance reliability and protect the SJ MOSFETs from ESD-induced damage. The chip sizes of the new products are also approximately 30% smaller than their predecessor product.
The new product lineup consists of 600V, 650V, and 700V voltage ratings and is available in 7 package types, including TO220, TO220FT, SOT223, PDFN88, and D2PAK, with high-demand options, such as DPAK and TO220F.
As a result, these SJ MOSFETs are well-suited for various applications requiring high power efficiency, including AI TVs, smart refrigerators, AI laptop adapters and power supplies. According to market research firm Omdia, the global smart home device market is projected to grow by 20% annually from 2025 to 2028.
“With the successful launch of 25 new Gen6 SJ MOSFETs integrating Magnachip’s latest technology, we have further strengthened our product lineup to meet our customers’ evolving technical requirements,” said YJ Kim, CEO of Magnachip. “By delivering optimal power solutions for the AI, industrial applications and smart home appliances, we aim to contribute to the growth and success of our customers in these sectors, and further advance our technology and market leadership as we transition to a pure-play Power company.”
Original – Magnachip Semiconductor
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Alpha and Omega Semiconductor Limited (AOS) announced the release of two state-of-the-art surface mounting package options for its industry-leading high power MOSFET portfolio. Designed to meet the robust packaging requirements for the most demanding applications that require increased performance and reliability, the new GTPAK™ and GLPAK™ packages will first be available on AOS’ AOGT66909 and AOGL66901 MOSFETs respectively. Combining AOS-proven robust MOSFET technology with advanced packaging know-how, these devices provide low ohmic and high current capabilities, critical to reducing the number of parallel MOSFETs needed in high current designs such as in next-generation e-mobility and industrial applications.
The GTPAK offered with the AOGT66909 is a topside cooling package designed with a large exposed pad for more efficient heat transfer. The topside cooling technology transfers most heat to the heat sink mounted on the top exposed pad. This feature allows the GTPAK to offer a more effective thermal dissipation route than going through the PCB board, allowing a lower-cost PCB, such as FR4, to be used.
The GLPAK offered with the AOGL66901 is a gull-wing version of AOS’ successful TOLL package. It is designed using AOS’ advanced clip technology to achieve a high inrush current rating. The GLPAK with clip technology offers very low package resistance and parasitic inductance, improving EMI performance compared to other package types that employ standard wire bonding.
The GTPAK and GLPAK packages feature gull-wing leads, enabling excellent solder joint reliability even for insulated metal substrates (IMS) applications. This gull-wing construction also provides enhanced thermal cycling for IMS boards and other critical applications that must meet higher reliability objectives. AOS MOSFETs in the new GTPAK and GLPAK packages are manufactured in IATF16949-certified facilities and are compatible with automated optical inspection (AOI) manufacturing requirements.
“We are committed to delivering new solutions to help our customers meet or exceed their power performance requirements. By offering our industry-leading MOSFETs in the new robust GTPAK and GLPAK packages, AOS allows designers to select from two state-of-the-art packaging technologies that offer significant performance improvements. Furthermore, the advanced technologies in our AOGT66909 and AOGL66901 MOSFETs will help simplify new designs by reducing the number of devices needed while also providing the necessary higher current capability that makes overall system cost savings possible,” said Peter H. Wilson, Marketing Sr. Director of MOSFET product line at AOS.
Technical Highlights
Continuous Drain
Current (A)Pulsed Drain
Current (A)RDS(ON) Max
(mOhms)Part Number Package VDS
(V)VGS
(±V)TJ
(°C)@25°C @100°C @25°C @10V AOGT66909 GTPAK 100 20 175 366 258 1464 1.5 AOGL66901 GLPAK 100 20 175 448 316 1790 1.25 Original – Alpha and Omega Semiconductor
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Wise-integration will unveil its latest WiseGan® and WiseWare® advancements at APEC 2025 in Atlanta, featuring two technical presentations and demonstration boards, including a new 1.5kW Totem Pole PFC module designed specifically for server and industrial applications.
“GaN technology continues to drive new efficiencies in power electronics, and APEC 2025 is the ideal platform to showcase our latest advancements,” said Thierry Bouchet, CEO of Wise-integration. “Our WiseWare® digital controllers are accelerating the adoption of GaN by enabling higher performance, system simplification, and seamless integration. Beyond efficiency, they lay the foundation for the next generation of intelligent power systems, addressing the growing demands of AI-driven server and industrial applications. These innovations are re-shaping the future of power conversion.”
Presentations
Technical Session (T04.4): “Novel Dual Output LDO Architecture in 650-V GaN Technology for Power ICs”
- Speaker: Plinio Bau, IC Design Engineer
- Date/Time: Tuesday, March 18, 9:30 – 9:50 AM
- Overview: Introduction of a novel dual-output, low-dropout regulator (LDO) architecture designed for 650-V GaN technology to enhance power IC efficiency and performance.
Industrial Session (IS26): “Comparing ZVS Losses Distribution of Similar High-Performance GaN HEMTs”
- Speaker: Theo Simon, Power Electronics Application Engineer
- Date/Time: Thursday, March 20, 11:00 – 11:25 AM
- Overview: Analysis of zero-voltage switching (ZVS) loss distribution in high-performance GaN high-electron-mobility transistors (HEMTs) to optimize power conversion efficiency.
Live Demonstrations at Booth #1238: Wise-integration will showcase four state-of-the-art boards, featuring its latest WiseWare® technologies:
- 1.5kW Single-Phase Totem Pole PFC (CrCM) – Designed for server and industrial applications, powered by WiseWare® digital control, with switching frequencies from 200 kHz to 730 kHz,
- 300W Totem Pole PFC (CrCM) – Highlights GaN’s efficiency in power conversion using the WIW1101 MCU Digital Controller and WiseGan® WI71060A,
- 300W Totem Pole PFC (CrCM)-LLC – Demonstrates improved PFC-LLC performance with WIW1101 MCU Digital Controller, WiseGan® WI71060A (PFC), and WI71120A (LLC), and
- 150W WiseWare® 2 Demo Board – Showcases a patented single-stage architecture that virtualizes power factor correction (PFC), significantly simplifying system designAbout WiseWare® Digital ControllerWiseWare® is a high-frequency digital AC-DC controller portfolio for SMPS applications. Utilizing MCU-based ZVS proprietary firmware, it optimizes GaN transistor power conversion. WiseWare® 1.1 (WIW1101) is a digital controller for Totem Pole PFC in AC-DC converters, enabling CrCM operation with ZVS to maximize efficiency.
Original – Wise-integration
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Vishay Intertechnology, Inc. announced that at the Applied Power Electronics Conference and Exposition (APEC) 2025, the company will be showcasing its broad portfolio of passive and semiconductor solutions that address the latest trends in power electronics — from energy harvesting, electric vehicle (EV) powertrains, and battery technologies to high efficiency power conversion for data centers.
Taking center stage in booth 905 will be Vishay’s newly released 1200 V MaxSiC™ series silicon carbide (SiC) MOSFETs, which deliver on-resistances of 45 mΩ, 80 mΩ, and 250 mΩ in standard packages for industrial applications, with custom products also possible. In addition, Vishay will provide a portfolio roadmap for 650 V to 1700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology — enabled through the company’s acquisition of MaxPower Semiconductor, Inc. — which will address market demands in traction inverter, photovoltaic energy storage, on-board charger, and charging station applications.
In booth 419, Vishay will be highlighting high energy PTC and NTC inrush current limiting solutions from the company’s most recent acquisition: Ametherm. They include a PTC matrix capable of withstanding 1500 VDC and 1125 J. Vishay Ametherm products are well-suited to growing industries and applications, such as robotic automation, industrial power supplies and motor drives, power distribution for server and AI cloud computing, LED lighting systems, medical devices, imaging equipment, electric vehicle charging, and alternative energy infrastructure.
At APEC 2025, Vishay will also be offering a variety of product-focused demonstrations highlighting IHLE® series low profile, high current inductors featuring integrated E-field shields; the THJP ThermaWick® Thermal Jumper; the pulse performance of MELF, CRCW / CRCW-HP thick film, and MCS, MCU, and MCW thin film chip resistors; and the thermal capabilities of the PCAN and RCP high power thin and thick film resistors. In addition, automotive-focused application demonstrations will include:
- An intelligent battery shunt built on WSBE Power Metal Strip® resistors, with low TCR and a CAN FD / USB interface for 400 V / 800 V systems
- A 48 V eFuse featuring TrenchFET® MOSFETs designed to handle a continuous current up to 100 A and operate continuously at maximum current with less than 14 W of losses
- A 1 kW, 48 V / 12 V buck-boost converter featuring two module power stages — each rated for 500 W — in a compact form factor
Additional Vishay passive components on display at APEC 2025 will include the IHDM series of high current, edge-wound through hole inductors with continuous operation to +180 °C; hybrid planar and integrated transformers; wireless charging coils; sensing NTC and PTC thermistors, including the PTCEL series capable of handling energy absorption up to 240 J; Power Metal Strip resistors with high power to 9 W and shunts with low TCR down to < ± 10 ppm/°C; high power wirewound, thin film, and thick film resistors, including the anti-surge RCS with power to 0.5 W in the 0805 case size; high frequency thick film resistors with up to 500 000 thermal cycles; high voltage thick film resistors and dividers; high voltage aluminum, ceramic, and power electronic capacitors (PEC); high capacity energy storage capacitors; military-grade, high energy, and hermetically sealed tantalum capacitors; and robust metallized polypropylene film capacitors, including the MKP1848e DC-Link capacitor with high temperature operation to +125 °C.
Highlighted Vishay semiconductor solutions will consist of the SiC967 microBRICK® synchronous buck regulator with integrated power MOSFETs and inductor and a wide input voltage range of 4.5 V to 60 V; scalable microBUCK® voltage regulators that deliver high efficiency; 400 V, 600 V, and 1200 V standard rectifiers in SlimDPAK 2L and SMPD 2L packages with high creepage distance; 650 V and 1200 V SiC Schottky diodes up to 12 A in eSMP® series and power packages for AC/DC power factor correction (PFC) and ultra high frequency output rectification; transient voltage suppressors (TVS); and analog switches in all major configuration types.
Original – Vishay Intertechnology
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According to the preliminary figures for the 2024 financial year available, the Management Board of centrotherm international AG, Blaubeuren, expects that the earnings forecast of a positive consolidated EBITDA (earnings before interest, taxes, depreciation and amortization) for 2024 in the low double-digit million euro range has been exceeded and that consolidated EBITDA is expected to be around EUR 39 million.
The higher than expected number of customer acceptances by the end of 2024, which led to a corresponding revenue increase, as well as an improvement in the centrotherm Group’s operating margin, contributed significantly to this positive earnings development.
In terms of further guidance for the 2024 financial year, total Group operating performance of around EUR 290 million will reach the upper end of the EUR 200 million to EUR 300 million range. Incoming orders are expected to be over EUR 164 million and are thus in line with the adjusted forecast of EUR 150 million to EUR 180 million issued at the beginning of November 2024.
The consolidated financial statements for the 2024 financial year have not yet been prepared by the Management Board or audited by the auditor. The publication of the annual report is scheduled for April 30, 2025.
Original – centrotherm international
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Infineon Technologies AG launched the next generation of high-density power modules which play a pivotal role in enabling AI and high-performance compute. Through enhanced system performance and with Infineon’s trademark robustness, the new OptiMOS™ TDM2454xx quad-phase power modules enable best-in-class power density and total-cost-of-ownership (TCO) for AI data centers operators.
The OptiMOS TDM2454xx quad-phase power modules enable true vertical power delivery (VPD) and offer industry’s best current density of 2 Ampere per mm². The modules follow the OptiMOS TDM2254xD and the OptiMOS TDM2354xD dual-phase power modules introduced by Infineon last year, and continue to enable superior power density for accelerated compute platforms.
In traditional horizontal power delivery systems, power needs to travel across the surface of the semiconductor wafer, which can result in higher resistance and significant power loss. Vertical power delivery minimizes the distance that power needs to travel, thereby reducing resistive losses enabling increased system performance.
Data centers are currently responsible for two percent of global energy consumption according to the IEA. Fueled by AI, the power demands within data centers are expected to grow by 165% between 2023 and 2030. Continually improving the efficiency and power densities of power conversion from grid-to-core is vital to enable further advancements in compute performance while reducing TCO.
“We are proud to expand our high-performance AI data center solutions with the OptiMOS TDM2454xx VPD modules,” said Rakesh Renganathan, Vice President Power ICs at Infineon Technologies. “We take a three-dimensional design approach and leverage our industry-leading power devices, packaging technologies and extensive systems expertise to provide high-performance and energy-efficient computing solutions as part of our mission to drive digitalization and decarbonization.”
The OptiMOS TDM2454xx modules are a fusion of Infineon’s robust OptiMOS 6 trench technology, chip-embedded package for superior electrical and thermal efficiencies, and innovative low-profile magnetic design that continue to push the envelope for performance and quality of VPD systems.
Additionally, the OptiMOS TDM2454xx has a footprint that is designed to enable module tiling and improving current flow that enhance electrical, thermal and mechanical performance. The OptiMOS TDM2454xx modules support up to 280A across four phases with an integrated embedded capacitor layer within a small 10x9mm² form factor. Combined with Infineon’s XDP™ controllers, they offer a robust power solution with improved system power density.
The OptiMOS TDM2454xx modules are further strengthening Infineon’s unique position in the market with the broadest product and technology portfolio based on all relevant semiconductor materials to power different AI server configurations from grid to core in the most energy efficient way.
Original – Infineon Technologies
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Cambridge GaN Devices revealed more details about a solution that will enable the company to address EV powertrain applications over 100kW – a market worth over $10B – with its ICeGaN® gallium nitride (GaN) technology. Combo ICeGaN® combines smart ICeGaN HEMT ICs and IGBTs (Insulated-Gate Bipolar Transistors) in the same module or IPM, maximizing efficiency and offering a cost-effective alternative to expensive silicon carbide (SiC) solutions.
Dr GIORGIA LONGOBARDI | FOUNDER AND CEO, CGD
“Today, inverters for EV powertrains either use IGBTs which are low cost but inefficient at light load conditions, or SiC devices which are very efficient but also expensive. Our new Combo ICeGaN solution will revolutionise the EV industry by intelligently combining the benefits of GaN and silicon technologies, keeping cost low and maintaining the highest levels of efficiency which, of course, means faster charging and longer range. We are already working with Tier One automotive EV manufacturers and their supply chain partners to bring this technology advancement to the market.”The proprietary Combo ICeGaN approach uses the fact that ICeGaN and IGBT devices can be operated in a parallel architecture having similar drive voltage ranges (e.g. 0-20V) and excellent gate robustness. In operation, the ICeGaN switch is very efficient, with low conduction and low switching losses at relatively low currents (light load), while the IGBT is dominant at relatively high currents (towards full load or during surge conditions).
Combo ICeGaN also benefits from the high saturation currents and the avalanche clamping capability of IGBTs and the very efficient switching of ICeGaN. At higher temperatures, the bipolar component of the IGBT will start to conduct at lower on-state voltages, supplementing the loss of current in the ICeGaN. Conversely, at lower temperatures, ICeGaN will take more current. Sensing and protection functions are intelligently managed to optimally drive the Combo ICeGaN and enhance the Safe Operating Area (SOA) of both ICeGaN and IGBT devices.
ICeGaN technology allows EV engineers to enjoy GaN’s benefits in DC-to-DC converters, on-board chargers and potentially traction inverters. Combo ICeGaN further extends the benefits of CGD’s GaN technology into the rich 100kW+ traction inverter market. ICeGaN ICs have been proven to be very robust and IGBTs have a long and proven track record in traction and EV applications. Similar, proprietary parallel combinations of ICeGaN devices with SiC MOSFETs have also been proven by CGD, but Combo ICeGaN – which is now detailed in a published IEDM paper – is a far more economical solution. CGD expects to have working demos of Combo ICeGaN at the end of this year.
Prof. FLORIN UDREA | FOUNDER AND CTO, CGD
“Having worked for three decades in the field of power devices, this is the first time I have encountered such a beautifully complementary technology pairing. ICeGaN is extremely fast and a star performer at light load conditions while the IGBT brings great benefits during full load, surge conditions and at high temperatures. ICeGaN provides on-chip intelligence while the IGBT provides avalanche capability. They both embrace silicon substrates which come with cost, infrastructure and manufacturability advantages.”CGD will be exhibiting at APEC (Applied Power Electronics Conference and Exposition). For more details about Combo ICeGaN, visit Booth 2039 at the Georgia World Congress Center | Atlanta, GA | March 16-20, 2025.
Original – Cambridge GaN Devices
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ALLOS Semiconductors and Canadian specialty semiconductor and performance materials supplier 5N Plus Inc. have announced the acquisition of the GaN IP portfolio from 5N Plus’ subsidiary AZUR Space Solar Power.
This strategic acquisition includes the buy-back of the GaN-on-Si technology for high power electronics (HPE) applications, which was originally sold to AZUR in 2020, along with several jointly completed innovations and resulting patent applications. With this acquisition, the global IP portfolio has expanded to over 50 granted patents, with more to come, most of them essential for both GaN-on-Si for optoelectronics and HPE applications. The transaction also includes the return of all recipes and other know-how.
This acquisition strengthens ALLOS’ position in the rapidly evolving areas of micro-LED displays and optical interconnect. ALLOS’ GaN-on-Si epiwafers are crucial for the customers to utilize standard silicon fabs for micro-LED manufacturing.
Additionally, this acquisition provides ALLOS’ with the option to re-enter the GaN-on-Si high power electronics (HPE) market. Power GaN has become a global mass market success and is projected to grow to over two billion USD by 2029. The unique features of ALLOS’ 200 mm and 300 mm technology can significantly benefit in scaling up production while reducing unit costs. In addition to standard silicon fab compatibility, these features include highest crystal quality, best wafer uniformity, and award-winning breakdown voltages for undoped GaN. While ALLOS remains focused on micro-LEDs, the company is now open to collaborations with HPE players.
Original – ALLOS Semiconductors
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Cambridge GaN Devices will demonstrate at APEC that the company’s ICeGaN® GaN ICs can now satisfy a broad range of applications with higher power requirements, such as servers, data centres, inverters, industrial power supplies and, very soon, automotive EVs over100 kW. The company’s new P2 series ICs feature RDS(on) levels down to 25 mΩ, supporting multi kW power levels with the highest efficiency, and a secure supply chain is in place including manufacturing deals with TSMC and ASE, and distribution through Digi-Key.
HENRYK DABROWSKI | SENIOR VICE PRESIDENT OF GLOBAL SALES, CGD
“GaN is now widely accepted as the technology of choice for mobile device chargers and is now set to supersede traditional silicon MOSFETs in higher power applications. The industry is also beginning to realize that GaN may replace SiC in certain high efficiency designs, due to its lower manufacturing cost. At APEC – one of the world’s most important events for the power industry – we are eagerly looking forward to having in-depth discussions with designers of high efficiency power systems and demonstrating the ruggedness, reliability and ease of use of our ICeGaN® GaN IC technology.”
During APEC, CGD will give the following Industry Session and Exhibitor Presentations:
Unlocking the Potential of Multi-level Inverters with Integrated ICeGaN technologies (Session: IS14.7)
As the electric vehicle market develops, there is a continuous drive to look at new and novel approaches to further improve the efficiency of the traction inverter and other electrical subsystems.Multi-level inverters enable the use of much high switching frequencies and break down the total voltage into smaller steps, which in turn allows for improved efficiency and downsizing of other parts of the system. GaN technology optimizes the benefits of multi-level topologies. CGD’s ICeGaN technology brings a higher level of integration, lower cost, best in class robustness and ease of use.
Presenter: Daniel Murphy, Director of Technical Marketing, CGD Date: Wednesday March 19, 2025 Time: 4:30 PM – 4:55 PM ET Location: Level Four, A411
ICeGaN Leads the Industry in GaN Integration
This presentation will demonstrate how ICeGaN technology leads in simplification, cost reduction, robustness, carbon footprint and efficiency of GaN power applications.Presenter: Peter Di Maso, Vice President, Business Development, CGD Date: Wednesday, March 19, 2025 Time: 12:45 PM – 1:15 PM ET Location: A301
On booth 2039, CGD will present demos that highlight the benefits of employing its ICeGaN technology in three application spaces: Motor Drives
- ICeGaN vs discrete GaN circuits comparison in half-bridge (daughter cards) demo board
- High and low power QORVO motor drive evaluation kits utilising ICeGaN and developed in collaboration with CGD
- Half-bridge built using CGD’s ICeGaN ICs in the BHDFN (Bottom Heat-spreader DFN) bottom-side cooled package with wettable flanks for easy inspection
Data Centres
- 3 kW totem-pole PFC evaluation board
- Half-bridge built using CGD’s BHDFN-packaged ICeGaN ICs
- Full-bridge demo showing CGD’s ICeGaN ICs in the DHDFN (Dual Heat-spreader DFN) package which has low thermal resistance (Rth(JC)), and can be operated with bottom-side, top-side and dual-side cooling. This package offers flexibility in design and out-performs the often-used TOLT package in top-side and, especially, dual-side cooled configurations.
- 2.5kW GaN-based CCM totem-pole PFC reference design targetting LED drivers, industrial brick DC/DC and general PSUs with power range of 500W to 1.5kW.
Scalable Power
- New single IC ICeGaN technology platform that delivers over 100kW, enabling CGD to address the $10B+ EV market, currently dominated by SiC, with cost-effective GaN solutions
- Single leg of a 3-phase 800 V automotive inverter demo board, developed in partnership with French public R&I institute, IFP Energies nouvelles (IFPEN)
- Parallel evaluation board demoing ICeGaN’s higher power capabilities
- Full-bridge demo showing CGD’s ICeGaN ICs in the DHDFN package
GIORGIA LONGOBARDI | FOUNDER AND CEO, CGD
“This is an exciting time for our industry as it embraces the disruptive GaN technology. Although this change from silicon has indisputably shown the power density and efficiency benefits of GaN, only CGD is presenting this new technology in an easy-to-use solution, which has been proven to be the most rugged in the industry. With our technology roadmap which details how ICeGaN will be able to address even EV applications over 100kW, we are sure designers will be inspired by the possibilities that ICeGaN has opened up.”
Original – Cambridge GaN Devices
