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MCC Semi introduced new high-performance 40V N-channel MOSFETs. These components leverage split-gate trench (SGT) technology and full AEC-Q101 qualification in compact packages.
Both MCU2D8N04YHQ and MCB2D8N04YHQ also boast low on-resistance of only 2.8mΩ, ensuring efficient power management in a diverse range of automotive systems.
These versatile MOSFETs in high-demand DPAK and D2PAK packages ensure a seamless upgrade path with minimal changes for integration within existing designs. Adding to their unquestionable performance in harsh conditions, these components have a high operating junction temperature of up to 175°C.
Whether it’s a battery management system or electric water pump, these new MOSFETs are up for delivering the ultimate in reliability for challenging automotive applications.
Features & Benefits:
- Fully AEC-Q101 qualified
- Split-gate trench (SGT) technology
- Low RDS(on)
- High power density package
- High junction temperature up to 175℃
- Available in compact DPAK and D2PAK packages
Original – Micro Commercial Components
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Axcelis Technologies, Inc. arranged multiple shipments of the Purion Power Series™ ion implanter systems to leading silicon carbide (SiC) power device chipmakers worldwide. The shipments, all shipped in the first quarter, included the Purion H200™ SiC high current, the Purion XE™ SiC high energy and the Purion M™ SiC medium current implanters.
The 150mm and 200mm systems will be used in high volume production of power devices supporting automotive, industrial, energy, and other power intensive applications.
President and CEO Russell Low commented, “We continue to win new customers and expand our footprint at existing customers globally. The Purion Power Series is the market leader due to its highly differentiated features and process control capabilities that are enabling for power device applications. Axcelis is the only ion implant company that can deliver complete recipe coverage for all power device applications.”
Original – Axcelis Technologies
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Toshiba Electronic Devices & Storage Corporation has launched two 150 V N-channel power MOSFET products that use the new generation process “U-MOSX-H series” and are suitable for switching power supplies for industrial equipment—used for such as data centers and communication base stations—and has expanded the lineup. The new products use the surface mount type SOP Advance(N) package and their drain-source On-resistance (max) is 11.1 mΩ for “TPH1100CQ5” and 14.1 mΩ for “TPH1400CQ5.”
The new products TPH1100CQ5 and TPH1400CQ5 have improved the reverse recovery characteristics that are critical in synchronous rectification applications. In the case of TPH1400CQ5, the reverse recovery charge is reduced by approximately 73 % and the reverse recovery time is approximately 45 % faster compared with Toshiba’s existing TPH1400CQH.
Used in synchronous rectification applications, TPH1400CQ5 reduces the power loss of switching power supplies and helps improve efficiency. The new products reduce the drain source spike voltage generated between the drain and source when MOSFET is switched, helping to lower EMI in switching power supplies.
Toshiba will expand its lineup of products and help to reduce power consumption for equipment.
Applications
- Switching power supplies (high efficiency AC-DC converters, high efficiency DC-DC converters, etc.)
- Motor control equipment (motor drives, etc.)
Features
- Low reverse recovery charge:
TPH1100CQ5 Qrr=32 nC (typ.) (-dIDR/dt=100 A/μs)
TPH1400CQ5 Qrr=27 nC (typ.) (-dIDR/dt=100 A/μs) - Fast reverse recovery time:
TPH1100CQ5 trr=38 ns (typ.) (-dIDR/dt=100 A/μs)
TPH1400CQ5 trr=36 ns (typ.) (-dIDR/dt=100 A/μs) - High channel temperature rating: Tch (max)=175 °C
Original – Toshiba
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The aviation industry’s requirements for the latest, most efficient and lowest-emission aircraft is propelled by an overarching goal towards sustainability and decarbonization. To satisfy these goals, aviation power systems developers are transitioning to electric actuation systems as the trend towards More Electric Aircraft (MEA) continues to grow.
To provide the aviation industry with a comprehensive electric actuation solution, Microchip Technology announced a new integrated actuation power solution that combines companion gate driver boards with the expansive Hybrid Power Drive (HPD) modules in silicon carbide or silicon technology with a power range of 5 kVA to 20 kVA.
The new integrated actuation power solution maintains the same footprint regardless of the power output. The companion gate driver boards are designed to be integrated with Microchip’s HPD modules to provide an all-in-one motor drive solution for the electrification of systems such as flight controls, braking and landing gear. Microchip’s power solutions are designed to scale based on the requirements of the end application, from smaller actuation systems for drones to high-power actuation systems for Electric Vertical Take-Off and Landing (eVTOL) aircraft, MEA and all-electric aircraft.
“We developed the companion gate driver boards to be used with our existing HPD modules to bring to market a plug-and-play power solution for MEA,” said Leon Gross, vice president of Microchip’s discrete product group. “With this solution, customers no longer need to design and develop their own drive circuitry, which can reduce design time, resources and cost.”
These high-reliability devices are tested to conditions outlined in DO-160, “Environmental Conditions and Test Procedures for Airborne Equipment.” There are multiple protection features including shoot-through detection, short circuit protection, desaturation protection, Under Voltage Lock Out (UVLO) and active miller clamping.
The gate driver boards are designed to be driven with external PWM signals based on Low Voltage Differential Signaling (LVDS) compliant with TIA/EIA-644 for low Electromagnetic Interference (EMI) and good noise immunity. The gate driver board provides differential outputs for telemetry signals like DC bus current, phase current and solenoid current by taking feedback from shunts present in the HPD module and DC bus voltage. It also provides direct output of two PT1000 temperature sensors available in the HPD power module.
The companion gate driver boards are low-weight, low-profile and compact solutions to optimize size and power efficiency of actuation systems. The gate drivers are designed to operate throughout the temperature range of −55°C to +110°C, which is critical for aviation applications that are often exposed to harsh environments.
The isolated companion gate driver boards only require a single 15V DC input for the control and drive circuit; additional voltages needed can be generated on the card. This significantly reduces the number of system components and simplifies system cabling.
Microchip provides comprehensive solutions for MEA by integrating power products with FPGAs, microcontrollers, security, memory and timing. Microchip’s solutions are designed to help customers speed up their development, reduce costs and get to market faster.
Original – Microchip Technology
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STMicroelectronics released its annual sustainability report, which provides insight into its 2023 performance related to priority environmental, social and governance (ESG) factors that support long-term value creation for all its stakeholders and sustainable growth for its business.
“Sustainability is at the heart of our value proposition, driving benefits for our company, customers, and society. We’re proud of our progress on innovation, resilience, employee engagement and the advancement towards our ambitious goal of becoming carbon neutral on scope 1 and 2, and partially on scope 3, by 2027,” said Jean-Marc Chery, President and CEO, STMicroelectronics. “Together with our partners and empowered employees, we’re accelerating sustainable transformation in technology and beyond.”
ESG highlights during 2023 include:
- A 45% decrease in GHG emissions for scopes 1 and 2 since 2018 in absolute terms (vs a 40% decrease in 2022).
- An increased sourcing of electricity coming from renewable sources to 71% (from 62% in 2022) and the signing of a significant power purchase agreement (PPA) in Italy to produce 250GWh renewable energy per year (3.75 TWh over 15 years) starting in 2024.
- The reuse, recovery, or recycling of 96% of the Company’s waste (1% higher than in 2022).
- A- scores for CDP water security and climate change.
- 12.2% of net revenues (US$2.1 billion) invested in R&D to support innovation.
- Involved in 195 active R&D partnerships worldwide.
- More than 610 STEM (Science, Technology, Engineering, and Mathematics) events and initiatives (a 35% increase on 2022) reaching over 100,000 students and teachers globally.
- 87% of employees would recommend ST as a great place to work, 4% higher than in 2021 (when we last had a full survey).
- In 2023, the company established a strong focus on setting up voluntary, employee-led Employee Resource Groups (ERGs) to promote inclusion in the workplace. WISE (Women Inspiring Supporting and Empowering), the first ERG for women, has grown fast, with some 1,400+ members in 60 locations.
In 2023, ST maintained a strong presence in major sustainability indices such as the Dow Jones Sustainability indices, FTSE4Good, EuroNext VIGEO Europe 120, CAC 40 ESG, MIB ESG, ISS ESG Corporate ratings, Bloomberg Gender Equality Index, and received an MSCI ESG Rating of AAA.
The 27th annual report contains highlights and details of ST’s sustainability performance in 2023 and presents the Company’s ambitions and longer-term goals in alignment with both the United Nations Global Compact Ten Principles and Sustainable Development Goals and the Science Based Targets initiative (SBTi). It is aligned with Global Reporting Standards (GRI), Sustainability Accounting Standards Boards (SASB), and Task Force on Climate-Related Financial Disclosures (TCFD). A third party has verified this report.
More information on ST’s sustainability efforts can be found at https://www.st.com/content/st_com/en/about/sustainability.html
Original – STMicroelectronics
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Chicony Power Technology, a worldwide leading manufacturer of power supplies and a pioneer in power electronics, has announced the winners of its Annual Partner Awards, honoring Infineon Technologies AG as its 2023 “GaN Strategic Partner of the Year”.
Infineon has been recognized by Chicony Power as its top partner for gallium nitride (GaN)-based power supplies, including notebook adapters, as well as ICT applications in gaming, storage and servers. This acknowledgment is the result of Infineon’s high standards for product selection, application expertise, high reliability and cost-effectiveness.
GaN stands out as one of the most crucial technologies which are essential for improving the efficiency of power supplies and reducing their product size. Pooling Infineon’s leading GaN expertise and Chicony Power’s remarkable capabilities in power supply system design, the win-win collaboration has helped push the boundaries of innovation and further strengthened both companies’ leading positions in energy-efficient power solutions. As of today, the GaN adoption rate in Chicony Power’s high-watt adapters has reached 20 percent, and this rate is rapidly increasing.
“Unrivalled R&D resources, a comprehensive application understanding and a large number of customer projects let Infineon continuously drive its roadmap for becoming a leading GaN Powerhouse,” said Adam White, Division President Power & Sensor Systems at Infineon Technologies. “The Strategic Partner of the Year award from Chicony Power is a great honor for us. We see this as part of our common mission to drive decarbonization and digitalization together.”
“We’re pleased to honor Infineon, which has played a pivotal role in driving customer success throughout 2023, as our GaN Strategic Partner of the Year,” said Peter Tseng, President of Chicony Power Technology. “Our Vision is to be a global pioneer in the implementation of new technology that enhances power supply efficiency, reduces the carbon footprint of power supplies and helps create a greener world. We would like our Annual Partner Awards to encourage Infineon and all other partners to maintain the momentum in jointly promoting GaN technology in the market alongside Chicony Power, making the power industry greener and cleaner.”
Original – Infineon Technologies
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Renesas Electronics Corporation announced that it has started operations at its Kofu Factory, located in Kai City, Yamanashi Prefecture, Japan. Renesas aims to boost its production capacity of power semiconductors in anticipation of the growing demand in electric vehicles (EVs). To celebrate this milestone, Renesas held an opening ceremony on April 11 with local government officials and partner companies in attendance.
The Kofu Factory previously operated both 150mm and 200mm wafer fabrication lines under Renesas Semiconductor Manufacturing Co., Ltd, a wholly owned subsidiary of Renesas, but ceased operations in October 2014. Renesas made the decision to re-open the factory in May 2022 as a 300-mm wafer fab to support the growing demand for power semiconductors, which is propelled by the industry-wide goal to realize a decarbonized society.
Renesas conducted a 90-billion-yen worth investment in 2022 and has now started operations. The factory will start mass production of IGBTs and other products in 2025, doubling Renesas’ current production capacity for power semiconductors.
“We are proud to announce a remarkable achievement of the Kofu Factory. After its closure in 2014, the Kofu Factory has gone through a transformation and emerged as a dedicated 300-mm wafer fab for power semiconductors, exactly a decade later,” said Hidetoshi Shibata, President and CEO of Renesas.
“We extend our heartfelt thanks to the local governments of Yamanashi Prefecture, Kai City and Showa Town as well as the plant construction companies, equipment vendors, outsourcing and other partner companies. The power semiconductors produced at the Kofu Factory will help maximize the effective use of electricity, which will be in significant demand as EVs and AI continue to proliferate and advance.”
Outline of the Kofu Factory:
- Official Name: Kofu Factory, Renesas Semiconductor Manufacturing Co., Ltd.
- Address: 4617 Nishiyahata, Kai City, Yamanashi Prefecture, Japan
- Date Opened: April 1, 2024
- Size of Clean Room: up to 18,000 square meters
- Products to be Manufactured: IGBTs, Power MOSFETs and other power products
Original – Renesas Electronics
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Nexperia has become aware that an unauthorized third party accessed certain Nexperia IT servers in March 2024.
The company promptly took action and disconnected the affected systems from the internet to contain the incident and implemented extensive mitigation. Nexperia also launched an investigation with the support of third-party experts to determine the nature and scope of the incident and took strong measures to terminate the unauthorized access.
In addition, the company has reported the incident to the competent Authorities, including the ‘Autoriteit Persoonsgegevens’ and the police, and is keeping them informed of the progress of this investigation.
Together with the external cybersecurity expert FoxIT, Nexperia continues to investigate the full extent and impact of the matter and is closely monitoring the developments. In the interest of the ongoing investigation, the company cannot disclose further details at this point.
Original – Nexperia
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PANJIT announced partnership with Transfer Multisort Elektronik, TME, a global expert in distribution solutions. This collaboration signifies a significant milestone in PANJIT’s journey, expanding the global footprint and enhancing accessibility to innovative semiconductor solutions.
In the words of Arkadiusz Węglewski, Head of Product Group, Semiconductors & Optoelectronics at TME:
“We are delighted to welcome the branded products of PANJIT to our global distribution network. Our partner’s extensive experience, along with their comprehensive range of discrete components and power management circuits, combined with a focus on the development of new SiC solutions and technologies, represents an invaluable contribution to our dynamic collaboration. We believe that the synergy of our values, such as innovation and responsibility, will strengthen our relationship and bring benefits to both parties. Through our joint commitment, we hope to meet the expectations of our customers worldwide, whether it be a consumer project, an industrial solution, or the demanding automotive sector. This is a promise of long-term, stable cooperation, bringing exceptional benefits to our customers worldwide. We are confident that our collective efforts will contribute to the development of innovative solutions that meet the highest expectations.”
PANJIT, with decades of expertise in MOSFET and other discrete semiconductor components, stands committed to delivering refined solutions across diverse industries. This partnership with TME will amplify the company’s reach, ensuring that the products are readily available to customers worldwide.
Edgar Chen, COO of PANJIT Semiconductor, stated, “This collaboration underscores our dedication to providing total semiconductor solutions globally. Leveraging TME’s vast distribution network, we aim to deliver unparalleled value and innovation, reinforcing our position as leaders in the semiconductor industry.”
PANJIT’s broad range of product portfolio, including ICs, IGBTs, MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors, bridges and more, will enrich TME’s offerings, catering to various industrial needs.
Together with TME, PANJIT looks forward to a successful partnership, where shared values of innovation and responsibility will drive collaborative efforts, benefiting customers and fostering mutual success.
Original – PANJIT International
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Toshiba Electronic Devices & Storage Corporation has launched a press pack IEGT “ST1500GXH35A” with ratings of 4500 V/1500 A that employs newly developed trench-type IEGT chips for use in high-voltage converters such as DC power transmission systems and industrial motor controllers.
The newly developed IEGT chips reduce collector-emitter saturation-voltage and improve shutdown tolerance, short-circuit tolerance and high-temperature tolerance.
Therefore, compared with the existing product, the collector-emitter saturation voltage (VCE(sat)) of the new ST1500GXH35A has been reduced by approximately 26 % from 3.4 V to 2.5 V (typical). In addition, the new product features wide RBSOA by improving shutdown tolerance, and tests short-circuit tolerance at a measurement voltage of 3400 V.
Furthermore, the junction temperature rating (Tj) has been increased from 125 °C to 150 °C (maximum) by improving the high-temperature tolerance of the diode.
ST1500GXH35A helps to reduce the size and power consumption for high-voltage converters such as DC power transmissions, static VAR compensators, and industrial motor controllers.
Applications
- DC power transmissions
- Static VAR compensators
- Industrial motor controllers
Features
- Low-collector-emitter saturation: VCE(sat)=2.6 V (typ.) (VGE=15 V, IC=1500 A, Tj=150 °C)
- Expanded RBSOA (reinforced for 3400 V of test voltage), tested short-circuit tolerance
- Maximum junction temperature rating: Tj (max)=150 °C
Original – Toshiba
