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SemiQ will showcase its latest portfolio of advanced SiC modules at this year’s International Electric Vehicle Symposium & Exhibition (EVS37) in Seoul, South Korea, from April 23rd to 26th, 2024.
Visitors to SemiQ’s booth #C1414 in Hall C, Coex, will have the chance to explore the company’s cutting-edge QSiC™ technologies, including the very latest 1200V SiC modules. Engineered to excel even in demanding environments, these modules facilitate top-tier performance and compact integration, all while mitigating both dynamic and static losses. Crafted from premium-grade ceramics, the modules come in a variety of configurations, including SOT-227, half-bridge, and full-bridge options.
The latest QSiC MOSFET modules offer versatile support for a wide spectrum of demanding automotive and industrial power applications where efficiency, power density and performance are paramount design considerations. These encompass electric vehicle charging, on-board chargers (OBCs), DC-DC converters, electronic compressors (E-compressors), fuel cell converters, medical power supplies, energy storage systems, solar and wind energy applications, data center power supplies, and UPS/PFC circuits.
“We’re excited to show visitors to EVS37 how our QSiC™ family of 1200V MOSFET modules can empower engineers in renewable energy, automotive, medical and industrial sectors,” said Dr. Timothy Han, President of SemiQ. “With rigorous testing and meticulous customization, we guarantee that each module exceeds the requirements of high-efficiency, high-power applications, enhancing reliability and performance.”
EVS37 is a global forum conceived to highlight industry breakthroughs and electric vehicle advancements. Boasting insightful talks by prominent figures from both industry and academia, EVS is a state-of-the-art exhibition featuring contributions from around the world and many opportunities for professional networking.
Original – SemiQ
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SemiQ has opened its newest office in Taiwan. This strategic move underscores SemiQ’s commitment to providing enhanced ground support to its valued customers in the region while further solidifying its presence in the Asia-Pacific market.
As a Product Engineering and Global Sourcing Center, the new office, located near the Taiwan High Speed Rail Hsinchu Station, will serve as a vital hub, facilitating seamless interfacing with key stakeholders including Hsinchu Foundry, Miaoli Test Facility, Far East OSATs, and Taiwan Sales Office.
“Expanding our presence in Taiwan represents a significant milestone for SemiQ as we continue to strengthen our global operations and better serve our customers,” said Michael Tsang, VP, Product Engineering and Operations at SemiQ. “The opening of this office underscores our dedication to providing unparalleled support and resources to our customer base in the region.”
Mr. Tsang, a seasoned professional with extensive experience in semiconductor industry dynamics, will lead the Taiwan office. His expertise will be instrumental in managing demand, fostering partnerships, and ensuring the highest level of service delivery to SemiQ’s customers.
The strategic location of the new office near key industry players and transportation hubs will enhance SemiQ’s ability to collaborate effectively with its partners, streamline operations and expedite response times to customer needs.
“We are excited about the opportunities that the Taiwan office brings in terms of strengthening relationships with our partners and better understanding the evolving needs of the market,” added Mr. Tsang. “This expansion aligns with our vision of driving innovation and delivering value-added solutions to our customers.”
Establishing the Taiwan office complements SemiQ’s existing wafer processing facilities in the region. It underscores its commitment to providing superior SiC solutions for ultra-efficient, high-performance, and high-voltage applications.
Original – SemiQ
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Microchip Technology Incorporated announced that its Board of Directors has appointed Rich Simoncic as Chief Operating Officer. In this position, Mr. Simoncic will report to Ganesh Moorthy, who will remain President and CEO.
Rich Simoncic joined Microchip as a new college graduate in 1989 and has had progressively increasing product development, operational and business unit responsibilities. He founded the analog business at Microchip in 1998 and has been instrumental in building it to a more than $2 billion annual revenue business through a combination of organic efforts as well as acquisitions.
He was promoted to Vice President in 1995, Corporate Vice President in 2001, Senior Vice President in 2019 and Executive Vice President in 2023. He holds a Bachelor’s degree in Electrical Engineering Technology from DeVry Institute of Technology.
“Rich has expanded his role over the last few years, beyond leading our analog businesses, by assisting me with several corporate initiatives, including strategic planning, acquisitions, total system solutions, market megatrends, use of artificial intelligence within Microchip and Investor Relations activities. Going forward, Rich and I will jointly manage the worldwide Microchip enterprise so that we can apply our combined leadership capacity to engage the opportunities and challenges ahead of us,” said Ganesh Moorthy, Microchip’s President and CEO.
Original – Microchip Technology
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According to the information on the official website of the China National Intellectual Property Administration (CNIPA) on April 2, 2024, the key claims 6, 9, 10, 13, 14, 17, 18 and 22-26 of the Chinese patent titled “Enhancement mode GaN HEMT device and method for fabricating the same” (Patent No. ZL201080015388.2) owned by Efficient Power Conversion Corp (“EPC”) have been maintained valid during an invalidation procedure (case number: 4W116775), which was requested by the petitioner Innoscience (Suzhou) Technology Co., Ltd. (“Innoscience”).
As compared with products using silicon-based devices, transistors and integrated circuits using GaN-based technology are superior in terms of higher efficiency, reduced weight and lower cost. The key claims which are held valid as mentioned above cover core technologies of the design and the manufacturing process of EPC’s proprietary enhancement-mode GaN-based power semiconductor devices. By virtue of multiple innovations including such technologies, EPC has successfully brought GaN-based power devices from laboratory to market.
In May 2023, EPC filed complaints before the US Federal Court and the US International Trade Commission (ITC), asserting that Innoscience (Zhuhai) Technology Co., Ltd. and its affiliate Innoscience infringed four patents of its foundational patent portfolio, which include the US counterpart of this Chinese patent ZL201080015388.2. As part of the responses to those complaints, Innoscience filed, in September 2023, a request to invalidate the EPC’s Chinese counterpart patent ZL201080015388.2 before the CNIPA.
Pursuant to the Chinese Patent Law, Innoscience may appeal this invalidation decision before the Beijing Intellectual Property Court within three months.
Original – Efficient Power Conversion
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Axcelis Technologies, Inc. announced a shipment of the Company’s Purion EXE™ SiC high energy implanter as well as a successful Purion H200™ SiC medium energy implanter evaluation closure at leading power device chipmakers located in Japan. The systems will be used for 150mm and 200mm production of silicon carbide power devices supporting automotive, industrial, energy, and other power intensive applications.
Greg Redinbo, Executive Vice President, Marketing and Applications remarked, “The successful evaluation closure of the 200mm Purion H200 SiC system enables it to join an existing 200mm Purion EXE SiC in production at a leading power device customer in Japan.” Dr. Redinbo continued, “The shipment of an additional Purion EXE SiC to a new 150mm customer in Japan highlights growing customer requirements for even higher energy ion implant recipes on advanced SiC power devices, which the Purion Power Series provides.”
President and CEO, Russell Low commented, “We look forward to supporting our growing installed base in Japan and remain focused on expanding our market share by providing customers with the most innovative implant technology and support solutions to ensure their success. The Purion Power Series is the market leader due to its highly differentiated features and process control capabilities that are enabling for power device applications. Axcelis is the only ion implant company that can deliver complete recipe coverage for all power device applications.”
Original – Axcelis Technologies
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Aehr Test Systems announced it has received an initial customer order for a FOX-NP™ wafer level test and burn-in system, multiple WaferPak™ Contactors, and a FOX WaferPak Aligner to be used for engineering, qualification, and small lot production wafer level test and burn-in of their silicon carbide devices.
The customer is multiple billion dollar per year global semiconductor company with locations across Europe, Asia, and the Americas that serves various industries including automotive, industrial, mobile, and consumer applications. The FOX-NP system, including the FOX WaferPak Aligner and initial WaferPaks, are scheduled to ship over the next few months.
The FOX-NP system is configured with the new Bipolar Voltage Channel Module (BVCM) and Very High Voltage Channel Module (VHVCM) options that enable new advanced test and burn-in capabilities for silicon carbide power semiconductors using Aehr’s proprietary WaferPak full wafer Contactors.
Gayn Erickson, President and CEO of Aehr Test Systems, commented, “We are very excited that this new customer selected our FOX-P solution for engineering, qualification, and production of their silicon carbide power devices. After working with the Aehr team and our technology solutions over an extended period of time, they felt secure in our ability to aid them in achieving these goals. A key feature in their selection of our FOX solution is its proven ability to cost-effectively implement their target burn-in and stabilization requirements, including 100% traceability and proof that every device on the wafer is burned in for the needed test duration.
“This customer currently has a wide range of automotive products and is entering the silicon carbide market to address several applications that include automotive, industrial, and electrification infrastructure. Key capabilities of our solution include our ability to scale from engineering and qualification and small lot production with the FOX-NP system to large scale production with the FOX-XP with Automated WaferPak Aligner. They have told us that they plan to transition to our FOX-XP multi-wafer test and burn-in systems for high-volume production. Aehr’s FOX-P technology facilitates a seamless transition from engineering to high-volume production with 100% compatibility between systems.
“This customer sees the enormous opportunity for silicon carbide power devices in industrial and power applications. William Blair forecasts that in addition to the 4.5 million six-inch equivalent wafers that will be needed to meet the demand for electric vehicle related silicon carbide devices in 2030, another 2.8 million wafers are needed to address industrial, solar, electric trains, energy conversion and other applications in 2030. The cost of ownership of our solution proves to be more cost-effective and efficient for these devices than package part burn-in after the die are packaged. This is a strong testimony of the advantage of wafer level burn-in as a better alternative to package part burn-in.
“The FOX family of compatible systems including the FOX-NP and FOX-XP multi-wafer test and burn-in systems and Aehr’s proprietary WaferPak full wafer contactors provide a uniquely cost-effective solution for burning in multiple wafers of devices at a single time to remove early life failures of silicon carbide devices, which is critical to meeting the initial quality and long-term reliability of the automotive, industrial, and electrification infrastructure industry needs.”
The FOX-XP and FOX-NP systems, available with multiple WaferPak Contactors (full wafer test) or multiple DiePakTM Carriers (singulated die/module test) configurations, are capable of functional test and burn-in/cycling of devices such as silicon carbide and gallium nitride power semiconductors, silicon photonics as well as other optical devices, 2D and 3D sensors, flash memories, magnetic sensors, microcontrollers, and other leading-edge ICs in either wafer form factor, before they are assembled into single or multi-die stacked packages, or in singulated die or module form factor.
Original – Aehr Test Systems
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Novel Crystal Technology (NCT), a global leader in Gallium Oxide (Ga2O3) technology, has successfully grown the first 6-inch Ga2O3 single crystal using the advanced Vertical Bridgman (VB) technique. This achievement marks a significant step forward in NCT’s efforts to deliver larger, high-quality semiconductor wafers for Ga2O3-based power devices.
The VB technique offers several advantages over NCT’s existing Edge-defined Film-fed Growth (EFG) method. By growing the crystal in a cylindrical shape, VB significantly reduces costs associated with substrate cutting. Additionally, it allows for production of substrates in various crystalline orientations, unrestricted by limitations imposed by crystal anisotropy.
Furthermore, the controlled thermal environment of VB growth leads to superior crystal quality with minimal defects, compared to EFG. Finally, dopant uniformity within the substrate is expected to improve, aligning with industry standards for other semiconductors like silicon.
NCT carried out a comparative evaluation between VB and EFG crystals with National Institute of Advanced Industrial Science and Technology (AIST) revealed a dramatic improvement in crystal quality. Synchrotron radiation X-ray topography analysis confirmed minimal defects in the VB-grown crystal, compared to the high density of defects observed in the EFG-grown crystal. This clearly demonstrates the superiority of the VB technique for producing high-quality Ga2O3 substrates.
Ga2O3 is a promising material for power electronics due to its ability to significantly reduce power loss compared to commonly used Silicon Carbide (SiC) in high-voltage applications, like electric vehicles and renewable energy systems. Its wide bandgap characteristics hold immense potential for energy conservation and CO2 emission reduction.
Established in 2015, NCT manufactures 2-inch and 100 mm gallium oxide (Ga2O3) substrates and epi-wafers for power devices. These are commercially available and used by universities, institutes, and power device companies worldwide. NCT currently supplies thousands of these substrates annually to support research and development efforts.
NCT is actively developing larger substrates such as 6-inch. Beyond substrates, NCT has a vision for broader Ga2O3 device production. They are already offering samples of their first Ga2O3 Schottky Barrier Diode, with qualification tests expected to be completed in September 2024.
The development of the Vertical Bridgman growth technique for Ga2O3 single crystals was initiated by Shinshu University, successfully achieving growth of 2-inch and 4-inch crystals. NCT acquired and extended their techniques to enable larger diameter crystal development. This research and development program was partially funded by the Adaptable and Seamless Technology Transfer Program through Target Driven R&D (A-STEP) of the Japan Science and Technology Agency (JST).
Original – Novel Crystal Technology
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Infineon Technologies AG and HD Korea Shipbuilding & Offshore Engineering Co. Ltd. (HD KSOE) have signed a non-binding Memorandum of Understanding (MoU) as a first step towards jointly developing emerging applications for the electrification of marine engines and machinery using energy-efficient power semiconductor technology.
HD KSOE, a marine pioneer and global leader in ship building, is already focusing on creating eco-friendly decarbonized ship technology that uses electricity and hydrogen. The company will now cooperate with Infineon to create innovative power solutions for propulsion drive technology, a core element for ship electrification.
Power semiconductors from Infineon drive the transformation towards clean, safe, and smart mobility services across all means of transportation. For modern maritime applications they are a key factor in guaranteeing a precise control of multiple power modules, such as large-capacity propulsion drives.
Infineon will provide HD KSOE with technical assistance and mentoring in semiconductor power modules and system solutions, as well as share information on new semiconductor trends for marine applications. With the partnership HD KSOE aims to enhance reliability and performance of marine vessels’ propulsion drive technology contributing to environmental sustainability through the electrification of ships.
Worldwide, maritime transport is responsible for almost 2.5 percent of total greenhouse gas emissions, according to the International Maritime Organization. It produces one billion tons of CO 2 each year. The transition to electric ships is imperative to mitigate the environmental impact of maritime transportation.
“We are pleased to sign an MoU with Infineon, which underpins our innovation efforts to become a leader in ship electrification technology,” said Chang Kwang-pil, Chief Technology Officer of HD KSOE. “Together, we will combine our strengths to create energy-efficient power solutions for CO2-friendly propulsion drives.”
“At Infineon we are providing the technologies needed in today’s world of transportation to drive electrification that will shape the future of mobility,” said Dr. Peter Wawer, Division President Green Industrial Power at Infineon Technologies. “We are excited to work closely together with HD KSOE to develop clean, safe and smart mobility solutions. This way, we contribute to a more sustainable marine engine ecosystem and drive the decarbonization of shipping.”
Original – Infineon Technologies
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CVD Equipment Corporation announced its financial results for the fourth quarter and fiscal year ended December 31, 2023.
Manny Lakios, President and CEO of CVD Equipment Corporation, commented, “Fourth quarter 2023 revenue was $4.1 million, down significantly versus the prior year period, as our business continues to experience fluctuations in revenue given the nature of the emerging growth end markets we serve. While we are disappointed with both our fourth quarter and full year performance, we’ll stay the course on our strategy to return to consistent profitability, with a focus on growth and return on investment.”
Mr. Lakios added, “Our primary goal is to expand penetration of our equipment solutions into high power electronics, battery material, aerospace and industrial applications. To this end, I am very pleased to announce that we started off 2024 with several key new order wins. First, we successfully penetrated a second PVT equipment customer, with an evaluation order for our newly launched PVT200 system used to grow 200 mm silicon carbide crystals. This represents an important milestone for CVD, with potential follow-on production orders should our equipment effectively meet the customers’ needs. Second, we received a $10 million multisystem order for a SiC CVD coating reactor from an industrial customer, which will be used to deposit a silicon carbide protective coating on OEM components. We are encouraged by these orders, as we continue to make investments in both research and development and sales and marketing, including direct engagement with multiple potential customers, focused on our key markets.”
Fourth Quarter 2023 Financial Performance
- Revenue of $4.1 million, down $3.1 million or 43.2% year over year primarily due to lower system revenues.
- Gross profit margin percentage was a negative 8.5% due to a large contract that experienced significant cost overruns during the quarter.
- Operating loss of $2.5 million.
- Net loss of $2.3 million or $0.33 basic and diluted share, compared to a net income of $1.5 million or $0.23 per basic and diluted share during the prior year fourth quarter. Net income in 2022 included $1.5 million of other income related to the recognition of Employee Retention Credits related to fiscal 2021.
- Cash and cash equivalents of $14.0 million as of December 31, 2023.
Full Year 2023 Financial Performance
- Revenue of $24.1 million, down $1.7 million or 6.6% year over year primarily due to the disposition of Tantaline and the wind down of MesoScribe’s operations.
- Our gross profit margin percentage was 21.0% in 2023 as compared to 25.7% in the prior year due to a large contract in 2023 that experienced significant cost overruns and other higher margin system contracts in 2022.
- Operating loss of $4.9 million.
- Net loss of $4.2 million or $0.62 basic and diluted share, compared to a net loss of $0.2 million or $0.03 per basic and diluted share in the prior year. Net loss in 2022 included $1.5 million of other income related to the recognition of Employee Retention Credits.
Fourth Quarter 2023 Operational Performance
- Orders for the fourth quarter were $5.8 million driven by continued demand in the aerospace sector and in our SDC segment for gas delivery equipment.
- Received a $2.1 million system order in the aerospace sector that will be delivered over the next 12 months.
- Received a $1.0 million order in our SDC segment for gas delivery equipment.
- During the fourth quarter, we developed a plan to reduce our operating costs to be consistent with current customer demand. This resulted in a reduction in our work force in early January 2024. We continue to evaluate opportunities to reduce our operating costs.
Full Year 2023 Operational Performance
- Booking of new orders from customers was $25.8 million, representing a decrease of approximately 22.1% compared to 2022 bookings of $33.1 million. The decline in bookings was related to large orders of PVT150 systems that were received in 2022.
- Backlog as of December 31, 2023 of $18.4 million, an increase from $17.8 million from the prior year end.
Original – CVD Equipment
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Ideal Power Inc. announced the closing of its previously announced underwritten public offering of 2,000,000 shares of its common stock (or pre-funded warrants in lieu thereof) at an offering price of $7.50 per share of common stock.
Titan Partners Group, a division of American Capital Partners, acted as sole book-running manager for the offering.
The gross proceeds to the Company from the offering were approximately $15 million, before deducting underwriting discounts, commissions and other estimated offering expenses payable by the Company. The Company intends to use the net proceeds from this offering for general corporate and working capital purposes.
The offering was made pursuant to an effective “shelf” registration statement on Form S-3 (File No. 333-269060) previously filed with the Securities and Exchange Commission (the “SEC”) on December 29, 2022, and declared effective by the SEC on January 9, 2023. A final prospectus supplement and the accompanying prospectus relating to and describing the terms of the offering were filed with the SEC on March 27, 2024.
Electronic copies of the final prospectus supplement and the accompanying prospectus relating to the offering, may be obtained by visiting the SEC’s website at www.sec.gov or by contacting Titan Partners Group LLC, a division of American Capital Partners, LLC, 4 World Trade Center, 29th Floor, New York, New York 10007, by phone at (929) 833-1246 or by email at prospectus@titanpartnersgrp.com.
Original – Ideal Power
