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LATEST NEWSToshiba Starts Volume Shipments of SmartMCD™ Series of Gate Driver ICs with Embedded Microcontroller
March 28, 2024
2 Min ReadToshiba Electronic Devices & Storage Corporation has started volume shipments of the SmartMCD™ Series of gate driver ICs with embedded microcontroller (MCU). The first product, “TB9M003FG“, is suitable for sensorless control of three-phase brushless DC motors used in automotive applications, including water and oil pumps, fans and blowers.
TB9M003FG combines a microcontroller (Arm® Cortex®-M0), flash memory, power control functions and communications interface functions into a gate driver that controls and drives N-ch power MOSFETs for three-phase brushless DC motor drives.
This integration will reduce system sizes and component counts while realizing advanced and complex motor control for a wide variety of automotive motor applications. The new product also incorporates Toshiba’s proprietary vector engine, hardware for sensorless sinewave control, reducing the load on the microcontroller, and the size of the software.
A reference design using TB9M003FG, “Motor Driving Circuit for Automotive Body Electronics Using SmartMCD™”, is now available on Toshiba’s website.
The expanding market for electric vehicles (xEV) requires electrification, component integration, downsized electronic control unit (ECUs), and quieter motors. In response, the new product contributes to downsizing of ECUs by integrating a microcontroller into the gate driver, and to quieter motors by using vector control.
Original – Toshiba
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Infineon Technologies AG introduced the first product in its new advanced power MOSFET technology OptiMOS™ 7 80 V. The IAUCN08S7N013 features a significantly increased power density and is available in the versatile, robust, and high-current SSO8 5 x 6 mm² SMD package.
The OptiMOS™ 7 80 V offering is a perfect match for the upcoming 48 V board net applications. It is designed specifically for the high performance, high quality and robustness needed for demanding automotive applications like automotive DC-DC converters in EVs, 48 V motor control, for instance electric power steering (EPS), 48 V battery switches and electric two- and three-wheelers.
Compared to the previous generation, the R DS(on) of the Infineon IAUCN08S7N013 has been reduced by more than 50 percent, and is now the best R DS(on) in the industry with a maximum of 1.3 mΩ. Users benefit from minimized conduction losses, superior switching performance and the highest power density in a 5 x 6 mm² package.
In addition, the IAUCN08S7N013 also features low package resistance and inductance, as well as a high avalanche current capability. For automotive applications, it has an extended qualification that goes beyond AEC-Q101.
The IAUCN08S7N013 is in mass-production and available now. More information is available at www.infineon.com/iaucn08s7n013/.
Original – Infineon Technologies
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Navitas Semiconductor announced its participation in the upcoming Power Electronics International conference on April 16th– 17th 2024, in Brussels, Belgium.
Grid reliability is a key factor in a $1.3 trillion power semiconductor opportunity as Navitas’ technologies accelerate the transition from fossil fuels to renewable energies. Navitas will introduce the latest GaNFast™ and GeneSiC™ products to the European audience, including new Gen-3 Fast SiC for high-power and higher-speed performance, plus GaNSafe™ – the world’s most protected GaN power devices.
Navitas will present the following on April 17th:
- “3.3 kV SiC MOSFETs Accelerate Grid-Connected Energy Storage,” Dr. Ranbir Singh, EVP GeneSiC
Synopsis: The grid supplies energy from generators and delivers it to customers via transmission and distribution (T&D) networks. In the U.S., the use of electricity storage to support and optimize T&D has been limited due to high storage costs and limited design and operational experience. Recent improvements in storage and power technologies, however, coupled with changes in the marketplace, herald an era of expanding opportunity for electricity storage. SiC inverters will revolutionize electricity delivery, renewable energy integration, and energy storage. It is well-recognized that silicon-based semiconductors have inherent limitations that reduce their suitability for utility-scale applications.
- “Bi-directional circuits open up new opportunities in off-grid applications,” Alfred Hesener, Senior Director Industrial and Consumer Applications
Synopsis: Bi-directional circuits are critical to effectively smooth the supply/demand variation in renewable energy applications. In the past, they were expensive to make and complex to implement in power electronics applications. Wide bandgap GaN power ICs with integrated drive and advanced circuit functions deliver easy-to-use, reliable, high power density, and functionality for power factor correction circuits, solar inverters, and solid-state circuit breakers.
Original – Navitas Semiconductor
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Vishay Intertechnology, Inc. introduced two new FRED Pt® 500 A Ultrafast soft recovery diode modules in the new TO-244 Gen III package. Offering higher reliability than previous-generation solutions, the Vishay Semiconductors VS-VSUD505CW60 and VS-VSUD510CW60 are designed to reduce losses and EMI / RFI in high frequency power conditioning systems.
The rugged TO-244 package of the diode modules released today withstands 46 000 IOL cycles at given conditions, offering an improved life expectancy over previous-generation devices. In addition, the industry-standard package is footprint-compatible with competing solutions in the TO-244 to provide a drop-in replacement for existing designs.
The VSUD505CW60 and VS-VSUD510CW60 are ideally suited for high frequency welding; high current converters and ballast water management systems (BWMS) in railway equipment, cranes, and ships; UPS; and other applications where switching losses comprise a significant portion of the total losses. In these applications, the softness of their recovery eliminates the need for a snubber, reducing component counts and lowering costs.
Offered in a common cathode configuration, the diode modules provide low forward voltage drop down to 0.82 V, thermal resistance — junction to case — of 0.16 °C/W, and an operating temperature range up to +175 °C.
Device Specification Table:
Part number VS-VSUD505CW60 VS-VSUD510CW60 VR (V) 600 IF(AV) (A) 500 Qrr typical (nC) 460 1770 trr (ns) 178 270 VFM @ 250 A, +175 °C (V) 0.95 0.82 RthJC per diode (°C/W) 0.160 Package TO-244 Samples and production quantities of the new FRED Pt® soft recovery diode modules are available now, with lead times of 26 weeks.
Original – Vishay Intertechnology
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Toshiba Corporation announced a new Toshiba Group Policy on Diversity, Equity, Inclusion and Belonging (DEIB) that takes Diversity and Inclusion (D&I) initiatives promoted by the Group to a new level with the addition of Equity (E) and Belonging (B). The policy applies to all executives and employees of Toshiba Group in Japan and overseas.
The addition of E represents fair provision of opportunities that allow all employees to take on challenges and flourish, so that all employees are able to maximize their abilities and contribute to the organization. B indicates realizing circumstances where each individual feels that, “As a member of the organization, I am in a place where I can make the most of myself,” leading to higher engagement, productivity, and employee retention.
The policy summarizes an approach to DEIB closely attuned to the times. Toshiba Group will use it to foster a corporate culture in which all employees can turn their diversity into strengths, find fulfillment in working for the Group, and feel that they are growing by taking on various challenges while maximizing their individual capabilities.
Since establishing an organization to promote D&I in 2004, under the direct control of the CEO, Toshiba Group has promoted D&I as part of the management strategy. Today, a close alignment of management goals and human resources policy is essential, and awareness of the importance of information disclosure on diversity and human capital is increasing globally. With the new policy, Toshiba Group intends to improve employee engagement and also to promote stakeholder understanding of the Group by communicating its basic stance on the participation of diverse human resources in an easy-to-understand manner.
Guided by the basic commitment of “Committed to People, Committed to the Future,” Toshiba Group will further strengthen its efforts to promote diversity based on the DEIB policy, with the aim of achieving both employee and company growth.
Toshiba Group DEIB Policy Website
https://www.global.toshiba/ww/sustainability/corporate/performance/social/diversity.htmlOriginal – Toshiba
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EPC Space announced a distribution agreement with Avnet, a global distributor of electronic components and services. Avnet will be a global distributor for EPC Space’s line of radiation hardened (Rad Hard) GaN power devices qualified for satellite and high-reliability applications.
EPC Space offers a family of Rad Hard power GaN devices that includes discrete transistors, Integrated Circuits (ICs), and Modules that offer significant performance advantages over competitive silicon-based space level power devices. EPC Space’s GaN technology devices are smaller, have lower resistance, and have superior switching performance compared to silicon-based components and solutions.
Critical spaceborne applications that benefit from the performance improvements that EPC Space devices offer include satellite’s DC-DC converters, reaction and momentum wheels, solar array drive assembly, micro-pumps for propulsion systems, and more.
“Partnering with Avnet, a global leader in distribution solutions, allows EPC Space to offer timely and reliable service to customers seeking high reliability GaN power solutions,” said Bel Lazar, EPC Space’s CEO.
Original – EPC Space
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STMicroelectronics introduced 100V trench Schottky rectifier diodes that boost efficiency in power converters operated at high switching frequencies.
Raising power-converter operating frequency, encouraged by the minimal switching losses of technologies like wide-bandgap semiconductors, allows designers to set new benchmarks in power density. However, at elevated frequencies, the energy losses in conventional planar diodes, including silicon Schottky devices, used as rectifiers become a significant factor limiting conversion efficiency.
ST’s trench Schottky diodes significantly reduce the rectifier losses, with superior forward-voltage and reverse-recovery characteristics that enable increased power density with high efficiency. The forward voltage is 50-100mV better than in comparable planar diodes, depending on current and temperature conditions. Simply changing to these devices can increase the efficiency by 0.5%.
There are 28 variants in the new family, with eight current ratings from 1A to 15A, multiple surface-mount packages, in industrial and automotive grades. The industrial-grade parts target applications such as miniature switched-mode power supplies and auxiliary power supplies for telecom, server, and smart-metering equipment.
In automotive, typical uses include space-constrained applications such as LED lighting, reverse-polarity protection, and low-voltage DC/DC converters. The parts are AEC-Q101 qualified, manufactured in PPAP-capable facilities, and specified from -40°C to 175°C.
When combined with ST’s flyback and buck-boost converters, such as the VIPer controllers and HVLED001A offline LED driver, the 100V trench Schottky rectifiers fulfil the active-components bill of materials for switched-mode power supplies. All are supported in ST’s eDesign Suite Rectifier Diodes Simulator, which helps to select the rating and footprint, simulate waveforms, and estimate power efficiency.
The diodes are 100% avalanche tested in production to ensure device robustness and system reliability. They are available in DPAK as well as SOD123 Flat, SOD128 Flat, SMB Flat, and PSMC (TO227A) surface-mount packages.
Original – STMicroelectronics
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Infineon Technologies AG introduced the SSO10T TSC package with OptiMOS™ MOSFET technology. With its direct top-side cooling concept, the package offers excellent thermal performance. This eliminates heat transfer into or through the PCB of the automotive electronic control unit.
The package enables a simple and compact double-sided PCB design and minimizes cooling requirements and system costs for future automotive power designs. The SSO10T TSC is therefore well suited for applications such as electric power steering (EPS), EMB, power distribution, brushless DC drives (BLDC), safety switches, reverse battery, and DCDC converters.
The SSO10T TSC has a 5 x 7 mm² footprint and is based on the established industry standard SSO8, a 5 x 6 mm² robust housing. However, due to its top-side cooling, the SSO10 TSC offers more than 20 percent and up to 50 percent higher performance than the standard SSO8 – depending on the thermal interface (TIM) material used and the TIM thickness. The SSO10T TSC package is JEDEC listed for open market and provides wide second source compatibility. As a result, the package can be introduced quickly and easily as the future standard for top-side cooling.
The SSO10T package enables a very compact PCB design and reduces the system footprint. It also lowers the cost of the cooling design by eliminating vias, resulting in lower overall system costs and design effort. At the same time, the housing offers high power density and efficiency, thus supporting the development of future-proof and sustainable vehicles.
Original – Infineon Technologies
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Alpha and Omega Semiconductor Limited announced its AONZ66412 XSPairFET™ MOSFET designed for Buck-Boost converters in USB PD 3.1 Extended Power Range (EPR) applications. The USB PD 3.1 EPR increases the USB-C maximum power up to 240W. AONZ66412 is defined to support the most commonly addressed power range of up to 140W at 28V, with two 40V N-Channel MOSFETs in a half-bridge configuration in a symmetric XSPairFET™ 5mmx6mm package.
The AONZ66412 can replace two single DFN5x6 MOSFETs, reducing the PCB area and simplifying the layout of the 4-switch buck-boost architecture while enabling a higher efficiency design. These benefits make the AONZ66412 ideal for buck-boost converters in Type-C USB 3.1 EPR applications, including notebook, USB hub, and power bank designs. The AONZ66412 is an extension to the AOS XSPairFET™ lineup that features the latest bottom source packaging technology and lower parasitic inductance for reduced switch node ringing.
Engineered with integrated high-side and low-side MOSFETs (3.8mOhms maximum on-resistance for each FET) within a DFN5x6 symmetric XSPairFET™ package, the low-side MOSFET source of the AONZ66412 is connected directly to a large paddle on the lead frame. This allows for improved thermals, as this paddle can be directly connected to the ground plane on the PCB. The improved package parasitics make 1MHz operation achievable, allowing inductor size and height to be reduced. AONZ66412 has been tested to achieve 97% efficiency @1MHz in typical USB PD 3.1 EPR conditions of 28V input, 17.6V output, and 8A load conditions.
“AOS specifically designed the AONZ66412 to meet EPR Type C PD application demands. AONZ66412 will reduce board space and improve power density to achieve the high-efficiency performance goals designers have set for this widely adopted USB-PD Type C application. AOS continues to be a leading innovator of buck-boost architecture solutions,” said Rack Tsai, Marketing Director of MOSFET product line at AOS.
Original – Alpha and Omega Semiconductor
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Wolfspeed, Inc. hosted Senator Thom Tillis (R-NC) and other local officials, community partners, and employees at a ceremony to celebrate the topping out of construction at the $5 billion John Palmour Manufacturing Center for Silicon Carbide. Located in Chatham County, North Carolina, the JP will produce 200mm silicon carbide wafers, significantly expanding Wolfspeed’s materials capacity, and meet the demand for next generation semiconductors critical to the energy transition and AI.
“We are excited to mark this critical milestone alongside our hard-working team, loyal customers, community partners, and ardent supporters like Senator Thom Tillis,” said Wolfspeed President and CEO, Gregg Lowe.
“This facility is a testament to Wolfspeed’s commitment to our local community and domestic workforce, furthering our position as the global leader in silicon carbide production. The JP will help maintain America’s lead in energy innovation, and unlock significant benefits for our local community by growing the state’s economy by more than $17.5 billion over the next two decades and creating 1,800 good-paying jobs by 2030.”
“Wolfspeed’s $5 billion investment in Chatham County is another example of why North Carolina is the best state in the country to do business,” said Senator Tillis. “I was proud to vote in favor of the CHIPS and Science Act, which provides critical support for domestic semiconductor manufacturing, and I applaud Wolfspeed’s commitment to developing technology here in North Carolina that supports our national security and economic interests.”
The JP represents a total investment of $5 billion, complemented by public and private support, to help accelerate the transition from silicon to silicon carbide and ramp up supply of this material recently deemed as critical to the energy transition by the U.S. Department of Energy. By the end of 2024, phase one of construction is expected to be completed on the 445-acre site.
The ramp of the JP will support recently signed customer agreements with Renesas, Infineon, and additional companies, while driving meaningful progress towards Wolfspeed’s long-term growth strategy. The JP will primarily produce 200mm silicon carbide wafers, which are 1.7x larger than 150mm wafers, translating to more efficient wafers and ultimately, lower costs. The JP underpins Wolfspeed’s vision of accelerating the adoption of silicon carbide semiconductors across a wide array of end-markets and unlocking a new era of energy efficiency.
Wolfspeed currently produces more than 60% of the world’s silicon carbide materials at its Durham, N.C. headquarters, and is engaged in a $6.5 billion capacity expansion effort to dramatically increase production.
Original – Wolfspeed
