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LATEST NEWS / SiC / WBGAxcelis Technologies to Deliver Purion M™ SiC Implanters to Several Power Device Chipmakers in China
March 20, 2024
2 Min ReadAxcelis Technologies, Inc. announced multiple shipments of the Company’s Purion M™ SiC medium current implanter to several leading power device chipmakers located in China. The systems, which shipped in the first quarter, will be used for 150mm production of silicon carbide power devices supporting automotive, industrial, energy, and other power intensive applications.
President and CEO, Russell Low commented, “We look forward to supporting our customers as they expand their manufacturing capabilities in this growing silicon carbide power device segment. To meet market demand, chipmakers need to maximize their yield and add capacity, while meeting a range of technical challenges unique to power devices. The Purion M SiC Power Series platform’s common and flexible architecture, coupled with its uniquely differentiated high temperature capability, makes it ideally suited for this expanding application.”
Executive Vice President of Marketing and Applications, Greg Redinbo added “The Purion M SiC tool provides customers an implanter with a broad dose and energy range perfect for the early phases of a fab production ramp. The Purion M SiC sets the stage for the future introduction of the Purion H200™ SiC and Purion XE™ SiC. Use of the full Purion Power Series family enables higher fab productivity, lower cost of ownership and the ability to manufacture more advanced silicon carbide power devices.”
Original – Axcelis Technologies
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Recently the European Space Agency (ESA) started its search for the technological advantage to improve their systems. Lead by research fellow Dr. Antxon Arrizabalaga, the project is aimed at studying the latest semiconductor technologies and exploring the impact they can have in the future of the space industry.
During its research, Dr. Antxon Arrizabalaga is looking forward to answer the following questions:
- Which are the next system-level figures the space power industry wants to achieve?
- Can the wide bandgap semiconductors help to achieve these figures?
- Which semiconductor ratings are demanded by the space power industry for each application?
At the moment the research project lead by Dr. Arrizabalaga is focusing on the silicon carbide (SiC) power semiconductor devices, as they are better suited for the requirements of the high-power applications. The team has already had several meetings with the main European space power companies discussing the points of interest mentioned above.
As a result, ESA received rich feedback with industry requirements and new ideas. And as anticipated, most of the companies are looking to the ways to increase power of their systems.
Thus, the following applications were mentioned the most:
- Latching current limiters (LCL) for high power distribution
- High-voltage (HV), increasing the traditional bus voltage, and high-power (HP) DC-DC converters
- Rectification and synchronous rectification
- HP motor drives
- Very HV applications, around and over 1 kV
Figure 1. The ratings of the semiconductor devices required by the industry for each application
According to Dr. Arrizabalaga, ESA classifies innovations in three categories, according to the degree of innovation they bring when compared to the state-of-the-art:
- Enhancing. It brings a substantial improvement to the state-of-the-art system.
- Based on a technology replacement
- For SiC devices it means replacing the Si devices in an existing application and optimizing the system to get system-level benefits
- Low risk, development time and cost for manufacturers
- Straightforward adoption by industry and high probability of success
- Enabling. It will allow a new feature, new application, or even a new mission.
- Critical technologies for a certain feature, application or mission
- For SiC devices it means that without the adoption of such devices, the new desired feature, application or mission is no longer possible
- Medium-high risk for manufacturers, higher development cost and effort, since it has never been done before
- More challenging adoption by industry, and lower probability of success
- Game-changing. It promises to bring entirely new capabilities (not considered for this study).
Figure 2. Classification of the applications mentioned by the industry and the main drivers needed to be optimized for each application.
The European Space Agency research team is looking forward to support the successful adoption of the wide bandgap (WBG) power semiconductor devices by the European space power industry, giving the European industry a competitive edge.
Original – Dr. Antxon Arrizabalaga
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On 18 March 2024, Infineon Technologies AG successfully completed its Share Buyback Program 2024, announced on 26 February 2024 in accordance with Article 5(1)(a) of Regulation (EU) No 596/2014 and Article 2(1) of Delegated Regulation (EU) No 2016/1052.
As part of the Share Buyback Program 2024, a total of 7,000,000 shares (ISIN DE0006231004) were acquired. The total purchase price of the repurchased shares was € 232,872,668. The average purchase price paid per share was € 33.27.
The buyback was carried out on behalf of Infineon by an independent credit institution via Xetra trading on the Frankfurt Stock Exchange, serving the sole purpose of allocating shares to employees of the company or affiliated companies, members of the Management Board of the company as well as members of the management board and the board of directors of affiliated companies as part of the existing employee participation programs.
Original – Infineon Technologies
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EPC announces the availability of the EPC9193, a 3-phase BLDC motor drive inverter using the EPC2619 eGaN® FET. The EPC9193 operates with a wide input DC voltage ranging from 14 V and 65 V and has two configurations – a standard unit and a high current version:
- The EPC9193 standard reference design uses a single FET for each switch position and can deliver up to 30 ARMS maximum output current.
- A high current configuration version of the reference design, the EPC9193HC, uses two paralleled FETs per switch position with the ability to deliver up to 60 Apk (42 ARMS) maximum output current.
Both versions of the EPC9193 contain all the necessary critical function circuits to support a complete motor drive inverter including gate drivers, regulated auxiliary power rails for housekeeping supplies, voltage, and temperature sense, accurate current sense, and protection functions. The EPC9193 boards measure just 130 mm x 100 mm (including connector).
Major benefits of a GaN-based motor drive are exhibited with these reference design boards, including lower distortion for lower acoustic noise, lower current ripple for reduced magnetic loss, and lower torque ripple for improved precision. The extremely small size of this inverter allows integration into the motor housing resulting in the lowest EMI, highest density, and lowest weight.
EPC provides full demonstration kits, which include interface boards that connect the inverter board to the controller board development tool for fast prototyping that reduce design cycle times.
“GaN-based inverters enhance motor efficiency and lower costs, expensive silicon MOSFET inverters”, said Alex Lidow, CEO of EPC. “This results in smaller, lighter, quieter motors with increased torque, range, and precision.”
Original – Efficient Power Conversion
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Teledyne e2v HiRel announced the availability of radiation tolerant RF and Power products for the evolving New Space market. Qualified based on the EEE-INST-002 space grade standard, these plastic packaged products are qualified for the harsh environment of space with –55°C to +125°C temperature operating ratings, and are radiation tolerant for use in LEO, MEO, and GEO missions.
The RF products include several low noise amplifiers (LNA) and are ideal for demanding high-reliability space applications where low noise figure, minimal power consumption, and small footprint are critical to mission success. They are ideally suited for satellite communication systems that are increasing the power of radio signals so utilizing components with minimal noise and distortion help minimizing the degradation of digital signals.
These LNAs are developed in the radiation tolerant pHEMT technology semiconductor process technology. The monolithic microwave integrated circuit (MMIC) products are available in dual-flat no lead (DFN) plastic over molded SMT packages and are biased over single positive VDD supply voltages, eliminating the need for negative power rail voltages.
- The TDLNA002093SEP delivers a low noise figure of less than 0.37 dB, IDDQ from 30 mA to 100mA, and exceptional performance from 1 GHz (L-band) to 6 GHz (S-band) frequencies.
- The TDLNA0430SEP delivers an industry leading low noise figure of less than 0.35 dB, IDDQ of 60mA and exceptional performance from 0.3 GHz (UHF) to 3 GHz (S-band) frequencies.
- The TDLNA2050SEP delivers an industry leading low noise figure of less than 0.4 dB, IDDQ of 60mA and exceptional performance from 2.0 GHz (S-band) to 5 GHz (C-band) frequencies.
The Power products offerings include Gallium Nitride (GaN) technology High Electron Mobility Transistors up to 650V, currents up to 90 Amp, high switching frequencies, and low RDSON. These GaN solutions have easy gate-drive requirements and enable high power density designs with four times less space requirements than traditional MOSFETs. The TDG650E60xSP parts are available in extremely small non hermetic packages with either top-side and bottom-side thermal pads and are ideally suited for satellite power supply systems with space production screening.
“Today we’re announcing our New Space products offering of RF and Power products optimized for space applications,” said Mont Taylor, Vice President and Business Development Manager at Teledyne e2v HiRel. “These LNAs with their ultra low noise figures coupled with the high power density capabilities of GaN transistors, we believe these products will enable system designers with superior solutions for space based satellite communication applications.”Original – Teledyne e2v HiRel
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MCC Semi unveiled the latest innovation tailored specifically for the demanding automotive industry. Powered by 100V, MCU62N10YHE3 is the N-channel MOSFET that packs superior performance and handling into a small DPAK package.
Precision and efficiency come standard in this power MOSFET solution that features split-gate trench technology and RDS(on) of only 11mΩ. Made to withstand harsh automotive environments, this AEC-Q101 qualified component can handle 62A current capability and operating junction temps up to 175⁰C.
The ultra-compact package and ideal handling make this new MOSFET an effective solution for more than just the automotive sector. Engineers can rely on its powerful capabilities for consumer, industrial, and renewable energy applications.
Features & Benefits:
- AEC-Q101 qualification drives confidence
- Split-gate trench (SGT) technology enhances performance
- RDS(on) of only 11mΩ boosts efficiency
- 62A current capability ensures performance
- Compact DPAK package saves space and money
- Junction temperature up to 175℃ for reliability in harsh conditions
Original – Micro Commercial Components
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Ideal Power Inc. announced an agreement with Richardson Electronics, Ltd. (RELL) for the global distribution of Ideal Power’s products including the discrete B-TRAN™ device and SymCool™ power module.
“We are excited to announce Richardson Electronics as the first distributor for our products. They have strong technical sales capability, expertise in demand creation and securing sales for new technologies, robust customer support, and global reach. Our products are a perfect fit for Richardson Electronics’ existing customer base needing medium and high voltage power semiconductors,” said Dan Brdar, President and Chief Executive Officer of Ideal Power.
“We are very excited to work with Ideal Power to bring their products to market worldwide. For years, Richardson has developed an excellent portfolio of Technology Partners for power management components and engineered solutions,” said Greg Peloquin, Executive Vice President and General Manager of Power & Microwave Technologies and Green Energy Solutions groups.
“Ideal Power’s products are an innovative and complementary addition to this portfolio, providing low loss and inherently bidirectional power semiconductors to customers globally for use in a wide variety of industrial applications.”
Ideal Power recently commenced shipment of its SymCool™ power modules to fulfill customer orders. The SymCool™ power module delivers clear advantages for several applications, including solid-state switchgear and circuit protection, renewable energy inverters for solar and wind, industrial inverters, hybrid and electric vehicles (“EVs”), and EV charging.
Ideal Power looks forward to industrial markets, particularly the solid-state circuit breaker market served by our SymCool™ power module, to be the earliest source of our sales ramp beginning in the second half of 2024, as expected.
Ideal Power utilizes an asset-light business model leveraging the large investment already made in the silicon processing, distribution, demand creation and support infrastructure. This business model allows the Company to focus on the further development of its disruptive B-TRAN™ technology while minimizing capital requirements.
Original – Ideal Power
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Infineon Technologies AG filed a lawsuit, through its subsidiary Infineon Technologies Austria AG, against Innoscience (Zhuhai) Technology Company, Ltd., and Innoscience America, Inc. and affiliates. Infineon is seeking permanent injunction for infringement of a United States patent relating to gallium nitride (GaN) technology owned by Infineon.
The patent claims cover core aspects of GaN power semiconductors encompassing innovations that enable the reliability and performance of Infineon’s proprietary GaN devices. The lawsuit was filed in the district court of the Northern District of California.
Infineon alleges that Innoscience infringes the Infineon patent mentioned above by making, using, selling, offering to sell and/or importing into the United States various products, including GaN transistors for numerous applications, within automotive, data centers, solar, motor drives, consumer electronics, and related products used in automotive, industrial, and commercial applications.
“The production of gallium nitride power transistors requires completely new semiconductor designs and processes”, said Adam White, President of Infineon’s Power & Sensor Systems Division. “With nearly two decades of GaN experience, Infineon can guarantee the outstanding quality required for the highest performance in the respective end products. We vigorously protect our intellectual property and thus act in the interest of all customers and end users.”
Infineon has been investing in R&D, product development and the manufacturing expertise related to GaN technology for decades. Infineon continues to defend its intellectual property and protect its investments.
On 24 October 2023, Infineon announced the closing of the acquisition of GaN Systems Inc., becoming a leading GaN power house and further expanding its leading position in power semiconductors.
Infineon leads the industry with its GaN patent portfolio, comprising around 350 patent families. Market analysts expect the GaN revenue for power applications to grow by 49% CAGR to approx. US$2 billion by 2028 (source: Yole, Power SiC and GaN Compound Semiconductor Market Monitor Q4 2023). Gallium nitride is a wide bandgap semiconductor with superior switching performance that allows smaller size, higher efficiency and lower-cost power systems.
Original – Infineon Technologies
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centrotherm international AG published preliminary, unaudited figures for the 2023 financial year in an ad hoc announcement. Accordingly, the Management Board anticipates total operating performance of around EUR 195 million with consolidated revenue of over EUR 150 million, and consequently lower total operating performance than forecast (forecast: EUR 220 million to EUR 260 million).
In contrast, EBITDA is expected to reach the forecast of a positive EBITDA in the low double-digit million range at EUR 19 million. At around EUR 270 million, the Group’s incoming orders will also be within the forecast range of EUR 250 million to EUR 350 million. The order backlog as at December 31, 2023 is expected to total around EUR 540 million.
Based on these positive preliminary business figures for 2023, the Executive Board believes that its strategy has been confirmed overall and has therefore decided today to examine strategic financing options. These options are aimed at further strengthening the company’s financial power in order to accelerate its continued growth and further strengthen its market position.
To this end, investments, particularly in research & development, the expansion of the product portfolio and in the global service network and customer service, are to be significantly increased. The possible financing options to be examined by the Management Board include, in particular, taking on a new strategic investor, carrying out capital increases, raising debt capital and issuing hybrid financial instruments such as convertible bonds or bonds with warrants.
Jan von Schuckmann, CEO of centrotherm international AG: “We are convinced that the potential expansion of our financial leeway can provide a strong new impetus for centrotherm’s future development, and that we can raise our innovative strength and market position to a new level. The timing for this is ideal to set the strategic course for an even stronger centrotherm at an early stage. This is particularly important for the sustainable success of our company and its employees in light of the anticipated global market growth and competitive environment.”
In recent years, centrotherm has successfully established itself as a technology provider and supplier of production solutions to leading manufacturers in both the semiconductor and photovoltaic industries. The product portfolio was significantly expanded as part of the sustainable diversification strategy. As a consequence, centrotherm is now the market leader with its product portfolio for high-temperature processes for silicon carbide wafers.
Its customer base includes leading global manufacturers in the semiconductor industry. The high demand for sensors and microelectronic components that are used in renewable energies, e-mobility and artificial intelligence applications are key drivers of the positive business trend. centrotherm aims to consistently continue its growth, and to exploit the diverse opportunities arising from its core expertise in thermal production solutions to the best possible extent.
Original – centrotherm international
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Micro Commercial Components introduced the latest auto-grade N-channel power MOSFETs with up to 2.5mΩ on-resistance: MCACL220N06YHE3, MCACL2D5N06YL, MCACL280N04YHE3, and MCACL330N04YHE3.
Optimized for high current output, these powerful components boast RDS(on) as low as 0.8mΩ in a sleek, engineer-friendly DFN5060 package. You can enhance power management and ramp up efficiency with minimal losses and the confidence that come along with AEC-Q101 qualification and the MCC name.
With high power density, MCC’s new 40V and 60V MOSFETs are designed to handle harsh conditions and operating junction temps up to 175℃ with ease, making them ideal for diverse automotive and industrial applications — from battery management systems and electric power steering to lighting controls, water pumps, and solar power systems.
Features & Benefits:
- AEC-Q101 qualified for reliability
- Advanced split-gate trench (SGT) technology
- Excellent thermal performance & efficiency
- Low RDS(on) minimizes power losses
- High power density packagey
- High junction temperature up to 175℃
- Compact DFN5060 package saves space and material costs
Original – Micro Commercial Components
