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LATEST NEWS / PRODUCT & TECHNOLOGY2 Min Read
The safe hot-swap operation in AI servers and telecom requires MOSFETs with a robust linear operating mode as well as a low R DS(on). Infineon Technologies AG addresses this challenge with the new OptiMOS™ 5 Linear FET 2, a MOSFET designed to provide the ideal trade-off between the R DS(on) of a trench MOSFET and the wide safe operating area (SOA) of a classic planar MOSFET.
The device prevents damage to the load by limiting the high inrush current and ensures minimal losses during operation due to its low R DS(on). Compared to the previous generation (the OptiMOS Linear FET), the OptiMOS Linear FET 2 offers improved SOA at elevated temperatures and reduced gate leakage current, as well as a wider range of packages. This allows for more MOSFETs to be connected in parallel per controller, reducing bill-of-material (BOM) costs and offering more design flexibility due to the extended product portfolio.
The 100 V OptiMOS 5 Linear FET 2 is available in a TO-leadless package (TOLL) and offers a 12 times higher SOA at 54 V at 10 ms and 3.5 times higher SOA at 100 µs compared to a standard OptiMOS 5 with similar R DS(on). The latter improvement is particularly important for the battery protection performed inside the battery management system (BMS) in case of a short circuit event. During such events the current distribution between parallel MOSFETs is critical for the system design and reliability.
The OptiMOS 5 Linear FET 2 features an optimized transfer characteristic that allows for improved current sharing. Taking into account the wide SOA and improved current sharing, the number of components can be reduced by up to 60 percent in designs where the number of components is determined by the short-circuit current requirement. This enables high power density, efficiency, and reliability for battery protection which are used in a wide range of applications including power tools, e-bikes, e-scooters, forklifts, battery back-up units and battery-powered vehicles.
The new OptiMOS 5 Linear FET 2 MOSFET is now available. Further information can be found at www.infineon.com/optimos-linearfet and www.infineon.com/ipt023n10nm5lf2.
Original – Infineon Technologies
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LATEST NEWS2 Min Read
onsemi and Würth Elektronik announced the integration of Würth Elektronik’s passive components database into onsemi’s one-of-a-kind Self-Service PLECS® Model Generator (SSPMG). This intuitive web-based platform enables engineers to create custom high-accuracy, high-fidelity PLECS models of complex power electronic applications, which helps identify and fix performance bottlenecks early in the design process. With the addition of Würth Elektronik’s passive system components to SSPMG, the generated switching loss models achieve even higher precision than before.
Relying on laboratory configurations and environments, typical industry PLECS models don’t always reflect the wide range of conditions that component characteristics such as conduction, energy loss and thermal impedance display in practical implementations. In contrast, SSPMG’s capabilities are based on onsemi’s physically scalable SPICE (Simulation Program with Integrated Circuit Emphasis) models, which are rooted in semiconductor physics and the actual process variations in making the components, resulting in a more accurate representation of their behavior in the circuit.
“SSPMG empowers onsemi customers to autonomously generate system-level PLECS models that are tailored to their specific power application,” said James Victory Doctor of Philosophy, fellow, Modeling and Simulation Solutions, Power Solutions Group, onsemi. “Instead of going through long and costly fabrication-based cycles, customers develop and optimize their complete power systems virtually, enabling them to go to market faster.”
“With the seamless integration of Würth Elektronik’s database of SPICE models into onsemi’s SSPMG, design engineers can now select both the active onsemi components and the passive Würth Elektronik components for their application, generating a more accurate switching loss model,” said Dayana Cómbita, strategic partnership manager Europe, Würth Elektronik. “Together, we are paving the way to first-time-right, optimized system designs for our mutual customers.”
SSPMG loss models can be downloaded and then used on customers’ proprietary simulation platforms or uploaded into onsemi’s industry-leading Elite Power Simulator (EPS). EPS provides customers direct insights into how a circuit topology will perform across onsemi’s EliteSiC family of products, PowerTrench® T10 MOSFETs and Field Stop 7 (FS7) IGBTs and IPMs.
Original – onsemi
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CVD Equipment Corporation announced its financial results for the third quarter ended September 30, 2024.
Manny Lakios, President and CEO of CVD Equipment Corporation, commented, “We are pleased that CVD’s third quarter 2024 revenue was $8.2 million, representing a 31.4% increase from the prior year period, which supported an improvement in operating performance and system gross margins. It is also encouraging that our September 30th backlog was $19.8 million, meaningfully higher than our 2023 year-end backlog. We are staying the course on our strategic efforts to build critical customer relationships, while carefully managing our costs to achieve our goal of long-term profitability and positive cash flow, while simultaneously focusing on growth and return on investment.”
“We continue to see an ongoing recovery of our Aerospace and Defense market segment. In early November, we received a $3.5 million follow on order for our CVI/CVD3500 system from an existing aerospace customer.”
“The silicon carbide market has remained quite dynamic, with ongoing overcapacity and declining wafer pricing,” continued Mr. Lakios. “That said, SiC wafer producers are quickly transitioning to 200 mm production to stay competitive, and CVD is making progress with the shipment of our first PVT200™ system during the third quarter. As we stated previously, this was a strategic order for SiC 200 mm crystal boule growth that we received in the first quarter of 2024. The performance of the system is currently being evaluated for production by our now second PVT account. In addition, we are continuing to support both our PVT150™ and PVT200™ products in the field.”
Mr. Lakios added, “Our order and revenue levels continue to fluctuate given the nature of the emerging growth end markets we serve.”
Third Quarter 2024 Financial Performance
- Revenue of $8.2 million, an increase of 31.4% year over year primarily due to higher CVD Equipment system revenues and an increase in gas delivery system revenues by our SDC segment.
- In the third quarter of 2023, we recognized an increase in revenue of $0.8 million that was the result of a modification of a customer contract.
- Backlog as of September 30, 2024 of $19.8 million, a decrease from $24.0 million at June 30, 2024 and increase from $18.4 million at December 31, 2023.
- During the quarter, we recognized a $1.0 million non-cash charge to reduce our PVT150™ inventory to net realizable value. This charge was recognized as a result of changes in the overall market for equipment for 150 mm SiC wafers.
- Our gross profit margin percentage improved due to improvements in contract mix but was offset by the inventory charge.
- The Company recognized a $0.6 million gain on the sale of equipment by its MesoScribe subsidiary.
- MesoScribe fulfilled its final orders of $0.7 million during the quarter and ceased operations as of September 30, 2024.
- Operating income of $77,000 as compared to an operating loss of $1.0 million in the prior year third quarter.
- Net income of $0.2 million or $0.03 per basic and diluted share, compared to a net loss of $0.8 million or $0.30 per basic and diluted share during the prior year third quarter.
- Cash and cash equivalents as of September 30, 2024 of $10.0 million as compared to $14.0 million as of December 31, 2024.
Third Quarter 2024 Operational Performance
- Orders for the third quarter were $4.1 million principally from our CVD Equipment segment as compared to $4.1 million in the prior year third quarter. Orders for the first nine months of 2024 were $21.0 million as compared to $19.9 million for the first nine months of 2023.
- We continue to make investments in both research and development and sales and marketing, focused on our three key strategic markets – aerospace & defense, high power electronics and EV battery materials / energy storage.
Original – CVD Equipment
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LATEST NEWS / PRODUCT & TECHNOLOGY / Si2 Min Read
Littelfuse, Inc. announced the release of the IXTN400N20X4 and IXTN500N20X4 Ultra Junction X4-Class Power MOSFETs.
The new devices expand upon the current 200 V X4-Class Ultra Junction MOSFETs, featuring some of the lowest on-state resistances available. The high current ratings of these MOSFETs allow designers to replace multiple low-current rated devices connected in parallel, streamlining the design process and enhancing both reliability and power density in applications. Additionally, the screw-mounted terminals of the SOT-227B package enable rugged and stable mounting.
These new 200 V MOSFETs deliver the lowest on-state resistances, enhancing and complementing the existing Littelfuse X4-Class Ultra Junction family portfolio. Compared to the existing state-of-the-art X4-Class MOSFET solutions, these MOSFETs offer up to ~2x higher current ratings and RDS(on) values up to ~63% lower.
The new MOSFETs are ideal for a range of low-voltage power applications where minimizing on-state losses is essential, including:
- Battery Energy Storage Systems (BESS),
- Battery chargers,
- Battery formation,
- DC/battery load switch, and
- Power supplies.
“The new devices will allow designers to replace multiple low-current rated devices, connected in parallel, with a single device solution,” said Sachin Shridhar Paradkar, Global Product Marketing Engineer at Littelfuse. “This unique solution simplifies gate driver design, improves reliability, improves power density and PCB space utilization.”
The Ultra Junction X4-Class Power MOSFET offers the following key performance benefits:
- Low conduction losses
- Minimized parallel connection effort
- Simplified driver design with minimal driver losses
- Simplified thermal design
- Increased power density
A MOSFET with low on-state resistance (RDS(on)) is the ideal choice in applications where minimal on-state losses are crucial. It significantly reduces the power dissipation during operation, leading to lower conduction losses, higher efficiency, and less heat generation. This makes it perfect for power-sensitive applications such as power supplies, motor drivers, and battery-operated devices where maintaining high efficiency and thermal management is crucial.
Performance Specifications
Performance Specs IXTN500N20X4 IXTN400N20X4 Package Aluminum-nitride ceramic-based isolated SOT-227B On-state resistance RDS(on) = 1.99 mΩ @ Tvj = 25°C RDS(on) = 3 mΩ @ Tvj = 25°C High nominal current rating 500 A @ TC = 25°C 340 A @ TC = 25°C Gate charge Qg = 535 nC Qg = 348 nC Thermal resistance RthJC = 0.13 K/W RthJC = 0.18 K/W Original – Littelfuse
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LATEST NEWS / PRODUCT & TECHNOLOGY2 Min Read
Nexperia introduced a new series of high-performance gate driver ICs designed for driving both high-side and low-side N-channel MOSFETs in a synchronous buck or half-bridge configuration. These devices deliver high current output and excellent dynamic performance, boosting efficiency and robustness in applications.
The automotive-qualified NGD4300-Q100 is ideal for electronic power steering and power converters, while the NGD4300 has been designed for use with DC-DC converters in consumer devices, servers and telecommunications equipment as well as for micro-inverters used in various industrial applications.
The floating high-side driver in these ICs can operate from bus voltages up to 120 V and use a bootstrap supply with an integrated diode, features which simplify overall system design and help to reduce PCB size. They can deliver up to 4 A (peak) source and 5 A of sink current to guarantee short rise and fall times even for heavy loads.
The gate driver has a low 13 ns delay and offers excellent channel-to-channel delay matching of only 1 ns. These delays are significantly lower than for similar competing gate drivers and help to minimize dead-time by maximizing switching duty-cycle. 4 ns rise and 3.5 ns (typical) fall times help to deliver higher efficiency and support high frequency and fast system control. These gate drivers accept input control signals complying with both TTL and CMOS logic levels.
“These devices are the first in our new portfolio of high-performance half-bridge gate drivers” according to Irene Deng, general manager of the IC solutions business group at Nexperia. “This release demonstrates how Nexperia is using process innovation to respond to the burgeoning demand for robust gate drivers that can increase power converter efficiency while also delivering smoother motor control in consumer, industrial and automotive applications.”
For superior robustness in power conversion and motor driving applications, these ICs are fabricated using a silicon-on-insulator (SOI) process. This allows the negative voltage tolerance of the HS pin to extend to -5 V, significantly reducing the risk of damage caused by system parasitic component and unexpected spikes. The NGD4300 and NGD4300-Q100 are available in a choice of DFN-8, SO-8 and HSO-8 packages to offer engineers the flexibility to trade-off between device size and thermal performance, depending on application requirements.
Original – Nexperia
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Infineon Technologies AG is reporting results for the fourth quarter and the full fiscal year, both of which ended on 30 September 2024.
“Infineon has managed the 2024 fiscal year well and concluded it in line with expectations,” says Jochen Hanebeck, CEO of Infineon. “Currently, there is hardly any growth momentum in our end markets except from AI, the cyclical recovery is being delayed. The inventory correction is continuing. Short-term ordering patterns and inventory digestion are clouding visibility on demand trends beyond the next couple of quarters. We are therefore preparing for a muted business trajectory in 2025. At the same time, we are relying on the consistent implementation of the structural measures in our “Step Up” program to strengthen our competitiveness. In combination with our innovative power, we are addressing our structural growth drivers and putting ourselves in the best position for a coming upturn.”
- Q4 FY 2024: Revenue €3.919 billion, Segment Result €832 million, Segment Result Margin 21.2 percent
- FY 2024: Revenue €14.955 billion, down 8 percent on the prior year; Segment Result €3.105 billion; Segment Result Margin 20.8 percent; adjusted earnings per share €1.87; Free Cash Flow €23 million, adjusted Free Cash Flow €1.690 billion
- Dividend proposal for FY 2024: Dividend unchanged at €0.35 per share
- Outlook for Q1 FY 2025: Based on an assumed exchange rate of US$1.10 to the euro, revenue of around €3.2 billion expected. On this basis, Segment Result Margin forecast to be in the mid-teens percentage range
- Outlook for FY 2025: Based on an assumed exchange rate of US$1.10 to the euro, revenue is expected to slightly decline compared with previous year. The adjusted gross margin should be around 40 percent and the Segment Result Margin in the mid-to-high-teens percentage range. Investments of approximately €2.5 billion planned. Free Cash Flow adjusted for investments in frontend buildings should be around €1.7 billion and reported Free Cash Flow around €900 million
For the full version of this news release (incl. financial data), please download the PDF version.
Original – Infineon Technologies
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GaN / LATEST NEWS / WBG2 Min Read
Cambridge GaN Devices (CGD) and IFP Energies nouvelles (IFPEN), a major French public research and training organization in the fields of energy, transport and the environment, have developed a demo which confirms the suitability of CGD’s ICeGaN®650 V GaN ICs in a multi-level, 800 VDC inverter.
The demo delivers super-high power density – 30 kW/l – which is greater than can be achieved by more expensive, state-of-the-art silicon-carbide (SiC)-based devices. The inverter realization also demonstrates the ease of paralleling that ICeGaN technology enables; each inverter node has three 25mΩ / 650V ICeGaN ICs – 36 devices in total – in parallel.
ANDREA BRICCONI | CHIEF MARKETING OFFICER, CGD
“We are super excited at this first result of our partnership with IFPEN. 800 VDC supports the 800 V bus which is being increasingly adopted by the EV industry. By addressing automotive and other high voltage inverter applications with energy-efficient ICeGaN-based solutions we are delivering on CGD’s key commitment – sustainability.”This multi-level GaN Inverters can power electric motors to over 100 kW peak, 75 kW continuous power. The CGD/IFPEN demo features: a high voltage input of up to 800Vdc; 3-phase output; a peak current of 125 Arms (10s) (180 Apk); and a continuous current of 85 Arms continuous (120 Apk).
The ICeGaN multi-level design proposed by IFPEN reveals several compelling benefits:
- Increased Efficiency: the improvement in the efficiency of the traction inverter leads to an increase in battery range and a reduction in charging cycles. It also leads to a reduction in battery cost if the initial range (iso-range) is maintained
- Higher switching frequencies: GaN transistors can operate at much higher frequencies than silicon transistors. This reduces iron losses in the motor, particularly in the case of machines with low inductances
- Reduced Electromagnetic Interferences: 3-level topology minimizes EMI and enhances the reliability of the system
- Enhanced thermal management: insulated metallized substrate boards featuring an aluminium core facilitate superior thermal dissipation, ensuring optimal operating temperatures and extending the lifespan of the system and associated GaN devices
- Modular design: this facilitates scalability and adaptability for varying system requirements.
GAETANO DE PAOLA | PROGRAM MANAGER, IFPEN
“Following the implementation of this inverter reference using CGD’s enabling ICeGaN ICs coupled with innovative topologies, such as multi-level solutions, IFPEN now strongly believes that GaN is a breakthrough technology in terms of performance and cost for high-voltage traction inverters.”Original – Cambridge GaN Devices
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LATEST NEWS / PRODUCT & TECHNOLOGY / SiC / WBG2 Min Read
ROHM has developed surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by increasing the creepage distance between terminals. The initial lineup includes eight models – SCS2xxxNHR – for automotive applications such as onboard chargers (OBCs), with plans to deploy eight models – SCS2xxxN – for industrial equipment such as FA devices and PV inverters in December 2024.
The rapidly expanding xEV market is driving the demand for power semiconductors, among them SiC SBDs, that provide low heat generation along with high-speed switching and high-voltage capabilities in applications such as onboard chargers. Additionally, manufacturers increasingly rely on compact surface mount devices (SMDs) compatible with automated assembly equipment to boost manufacturing efficiency. Compact SMDs tend to typically feature smaller creepage distances, fact that makes high-voltage tracking prevention a critical design challenge.
As leading SiC supplier, ROHM has been working to develop high-performance SiC SBDs that offer breakdown voltages suitable for high-voltage applications with ease of mounting. Adopting an optimized package shape, it achieves a minimum creepage distance of 5.1mm, improving insulation performance when contrasted with standard products.
The new products utilize an original design that removes the center pin previously located at the bottom of the package, extending the creepage distance to a minimum of 5.1mm, approx. 1.3 times greater than standard products. This minimizes the possibility of tracking (creepage discharge) between terminals, eliminating the need for insulation treatment through resin potting when surface mounting the device on circuit boards in high voltage applications. Additionally, the devices can be mounted on the same land pattern as standard and conventional TO-263 package products, allowing an easy replacement on existing circuit boards.
Two voltage ratings are offered, 650V and 1200V, supporting 400V systems commonly used in xEVs as well as higher voltage systems expected to gain wider adoption in the future. The automotive-grade SCS2xxxNHR are AEC-Q101 qualified, ensuring they meet the high reliability standards this application sector demands.
Going forward, ROHM will continue to develop high-voltage SBDs using SiC, contributing to low energy consumption and high efficiency requirements in automotive and industrial equipment by providing optimal power devices that meet market needs.
Original – ROHM