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Texas Instruments (TI) announced the opening of its new, state-of-the-art product distribution center in Dreieich, Germany, outside of Frankfurt. This new distribution center includes 9,000 square meters of space and new automation features. The new center has the capacity to quickly ship up to 7,500 orders per day of a broad range of TI analog and embedded processing semiconductors across Europe.
“Our new product distribution center offers faster, more efficient, flexible and reliable service for TI’s customers in Europe to meet semiconductor demand now and in the future,” said Stefan Bruder, president of Texas Instruments Europe. “Our new center in Dreieich is the latest addition to TI’s global product distribution network which, combined with our convenient purchasing options, provides an improved customer experience from product selection to shipment.”
Located near many of TI’s industrial and automotive customers, as well as the Frankfurt Airport, the new distribution center enables faster product delivery in Europe. The pick, pack and ship process is fully automated and orders are ready to ship within 15 minutes or less. Customers in central Germany can expect same-day product delivery, while next-day delivery is available to customers in most European countries.
TI has been operating in Europe since 1956, and its new distribution center builds on TI’s existing European footprint which includes a semiconductor wafer factory in Freising, Germany, research and development teams, as well as more than 30 sales offices across 18 different European countries.
Customers in Europe and across the globe can conveniently buy from TI and save on exchange fees with more than 20 currency options available (including euro, pound sterling, Norwegian kroner and Swiss franc) when purchasing on TI.com or through TI API suites.
Original – Texas Instruments
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Qorvo® announced the election of Mr. Alan S. Lowe to its Board of Directors, effective November 11, 2024. Mr. Lowe also joined the Board’s Audit Committee.
Since 2015, Mr. Lowe has served as president and chief executive officer of Lumentum Holdings Inc., a designer and manufacturer of optical and photonic products enabling optical networking and laser applications worldwide.
Prior to Lumentum’s separation from Viavi Solutions Inc. in 2015, Mr. Lowe was employed by Viavi. Mr. Lowe joined Viavi in September 2007 as senior vice president of the Lasers business and became executive vice president and president of Viavi’s communications and commercial optical products business in October 2008.
Bob Bruggeworth, President and Chief Executive Officer of Qorvo, said, “I am delighted that Alan is joining our Board of Directors. He brings terrific experience, insight and leadership to our Board, and we look forward to his contributions.”
“Qorvo is recognized globally for its product and technology leadership,” said Mr. Lowe. “I am excited to join Qorvo’s Board, and I look forward to working with my fellow directors in continuing Qorvo’s growth and creating long-term value for its shareholders.”
Original – Qorvo
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Power components are evolving to meet the increasing demands for higher efficiency, smaller size and greater performance in power electronic systems. To provide system designers with a wide range of power solutions, Microchip Technology announced its portfolio of IGBT 7 devices offered in different packages, multiple topologies, and current and voltage ranges.
Featuring increased power capability, lower power losses and compact device sizes, this new portfolio is designed to meet high-growth market segments such as sustainability, E-Mobility and data centers. These high-performance IGBT 7 devices are key building blocks for power applications in solar inverters, hydrogen ecosystems, commercial and agricultural vehicles and More Electric Aircraft (MEA).
Designers can select a suitable power solution based on their requirements. The IGBT 7 devices are offered in standard D3 and D4 62 mm packages, as well as SP6C, SP1F and SP6LI packages. Many configurations are available in the following topologies: three-level Neutral-Point Clamped (NPC), three-phase bridge, boost chopper, buck chopper, dual-common source, full-bridge, phase leg, single switch and T-type. Devices are available with voltages ranging from 1200V to 1700V and current ranging from 50A to 900A.
“The versatile IGBT 7 portfolio combines ease of use and cost efficiency with higher power density and reliability, offering our customers maximum flexibility. These products are designed for general industrial applications as well as specialized aerospace and defense applications,” said Leon Gross, corporate vice president of Microchip’s discrete product group. “Additionally, our power solutions can be integrated with Microchip’s broad range of FPGAs, microcontrollers (MCUs), microprocessors (MPUs), dsPiC® Digital Signal Controllers (DSCs) and analog devices to provide a comprehensive system solution from one supplier.”
The lower on-state IGBT voltage (Vce), improved antiparallel diode (lower Vf) and increased current capability can enable lower power losses, higher power density and higher system efficiency. The lower-inductance packages, combined with the higher overload capability at Tvj −175°C, make these devices excellent options for creating rugged and high-reliability aviation and defense applications—such as propulsion, actuation and power distribution—at a lower system cost.
For motor control applications where enhanced controllability of dv/dt is important, the IGBT 7 devices are designed to offer freewheeling softness for efficient, smooth and optimized driving of switches. These high-performance devices also aim to improve system reliability, reduce EMI and minimize voltage spikes.
Original – Microchip Technology
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Cambridge GaN Devices (CGD) and Qorvo® have partnered to bring together industry-leading motor control and power efficiency technologies in the PAC5556A + ICeGaN® evaluation kit (EVK). This collaboration combines Qorvo’s high-performance BLDC/PMSM motor controller/driver and CGD’s easy-to-use ICeGaN ICs in a board that significantly improves motor control applications.
ANDREA BRICCONI | CHIEF MARKETING OFFICER, CGD
“By combining industry-leading solutions from our two technology-strong companies in this EVK, we are enabling the development of compact, energy-efficient systems with high power density. Unlike other GaN implementations, ICeGaN technology easily interfaces with Qorvo’s PAC5556A motor control IC for seamless high performance in BLDC and PMSM applications.”JEFF STRANG | GENERAL MANAGER, POWER MANAGEMENT BUSINESS UNIT, QORVO
“Wide-bandgap semiconductors like GaN and SiC are being integrated into motor control applications for the power density and efficiency advantages they offer. CGD’s ICeGaN technology delivers ease of use and reliability – two critical factors for motor control and drive designers. Customers are responding enthusiastically when they experience the power of GaN combined with our highly integrated PAC5556A 600V BLDC motor control solution.”By employing CGD’s latest-generation P2 ICs, the PAC5556AEVK2 evaluation kit with 240 mΩ ICeGaN achieves up to 400W peak performance without a heatsink, whilst the PAC5556AEVK3 with 55 mΩ ICeGaN hits 800W peak with minimal airflow cooling.
ICeGaN’s efficiency gains result in reduced power loss, increased power availability, and minimized heat dissipation, enabling smaller and more reliable systems. Because ICeGaN integrates essential current sense and Miller clamp elements, gate driver design is simplified and BOM costs are reduced. This makes the solution easy to implement and price-competitive, as well as high performance.
The PAC5556A + CGD GaN EVKs offer higher torque at low speeds and precise control, making them ideal for white goods, ceiling fans, refrigerators, compressors and pumps. Target markets include industrial and home automation, especially where compact, high-efficiency motor control systems are required. PAC5556AEVK2 and PAC5556AEVK3 are now available to order at Qorvo’s website.
Original – Cambridge GaN Devices
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Texas Instruments (TI) announced that the Science Based Targets initiative (SBTi) has received the company’s commitment to set near-term company-wide emissions reductions in line with climate science.
As part of its commitment, TI is developing science-based targets for review and validation by SBTi’s technical experts, including greenhouse gas (GHG) emissions reduction targets for Scope 1 and 2 emissions aligned with the Paris Agreement which sets the goal of limiting global warming to 1.5°C. In addition, TI plans to begin reporting additional relevant Scope 3 GHG emission categories in 2025 and plans to set supplier engagement targets to reduce emissions across its value chain.
“Our semiconductors are the foundation of sustainable technology solutions, from renewable energy and storage to vehicle electrification,” said Haviv Ilan, TI president and chief executive officer. “As a manufacturer of tens of billions of semiconductors each year, it’s critical that we provide dependable capacity while continuously striving to reduce our environmental impact. Setting and achieving climate goals underscores TI’s long-standing commitment to operate in a socially thoughtful and environmentally responsible manner, and we are confident that our collective efforts will be impactful and long-lasting.”
As TI works with SBTi to develop and assess its future goals, the company remains focused on its current multiyear goals that continue through 2025, including a reduction in absolute Scope 1 and Scope 2 emissions by 25% from a 2015 base year.
As the company continues to expand its manufacturing and provide geopolitically dependable capacity, TI will further increase its use of renewable electricity, with key milestones to reach 100% in its 300mm manufacturing operations by 2025, 100% in its U.S. operations by 2027, and 100% in its worldwide operations by 2030.
Original – Texas Instruments
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ROHM has developed automotive-grade AEC-Q101 qualified 4th Generation 1200V IGBTs that combine class-leading low loss characteristics with high short-circuit resistance. This makes the devices ideal for vehicle electric compressors and HV heaters as well as industrial inverters.
The current lineup includes RGA80TRX2HR / RGA80TRX2EHR / RGA80TSX2HR / RGA80TSX2EHR – in two discrete package types (TO-247-4L and TO-247N), along with 11 bare chip variants – SG84xxWN – with plans to further expand the lineup in the future.
The increasing use of higher voltages in automotive systems and industrial equipment has led to a growing demand for power devices capable of handling high voltages in applications such as vehicle electric compressors, HV heaters, and inverters for industrial equipment.
At the same time, there is a strong push for high efficiency power devices to improve energy conservation, simplified cooling mechanisms, and smaller form factors for a decarbonized society. Automotive electrical components must also comply with automotive reliability standards, while power devices for inverter and heater circuits are required to provide current interruption capabilities during short circuits, necessitating high short-circuit tolerance.
In response, ROHM redesigned the device structure and adopted an appropriate package to develop new 4th Generation IGBTs suitable for high voltage by delivering industry-low loss characteristics with superior short-circuit tolerance.
These devices achieve an industry-leading short-circuit withstand time of 10µs (Tj=25°C) together with low switching and conduction losses while maintaining a high withstand voltage of 1200V and meeting automotive standards by reviewing the device structure, including the peripheral design. At the same time, the new TO-247-4L package products, which feature 4 terminals, can accommodate an effective voltage of 1100V in a ‘Pollution Degree 2 environment’ by ensuring adequate creepage distance between pins. This enables support for higher voltage applications than conventional products.
Implementing creepage distance measures on the device side alleviates the design burden for manufacturers. On top, the TO-247-4L package achieves high-speed switching by including a Kelvin emitter terminal, resulting in even lower losses. In fact, when comparing the efficiency of the new TO-247-4L packages with conventional and standard products in a 3-phase inverter, loss is reduced by about 24% compared to standard products and by 35% over conventional products – contributing to higher efficiency in drive applications.
ROHM will continue to expand its lineup of high-performance IGBTs that contribute to greater miniaturization and high efficiency drive in automotive and industrial equipment applications.
Original – ROHM
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Efficient Power Conversion (EPC) announced that the Full Commission of the U.S. International Trade Commission (ITC) has affirmed the ITC’s initial determination that Innoscience infringed EPC’s foundational patent for GaN technology, which is core to applications involving artificial intelligence, satellites, rapid chargers, humanoid robots, and autonomous driving, among others. The decision imposes a ban on Innoscience (Zhuhai) Technology Co., Ltd. and its affiliates (Innoscience) from importing GaN-related products into the United States without a license from EPC.
This milestone decision marks the first successfully litigated U.S. patent dispute involving GaN-based wide bandgap semiconductors and solidifies EPC’s position as a leading developer of these next-generation devices, which are significantly more efficient, faster, and smaller than traditional, silicon-based technology. The decision also paves the way for EPC to expand access to its IP through licensing agreements with potential partners and customers around the world.
“After pouring nearly two decades and immense resources into developing our uniquely valuable intellectual property portfolio, this is a tremendous victory for EPC and a major win for fair competition globally, which is critical to the success of next-generation technological advances. We are grateful to the ITC for their diligent work in recognizing the validity of our patents and Innoscience’s infringement,” said Alex Lidow, CEO and Co-Founder of EPC. “EPC will continue to vigorously defend our IP against unfair use to ensure that we can continue to innovate and provide our customers with the cutting-edge technologies needed to help power our future.”
The ITC’s most recent decision is the fourth time that EPC’s IP rights have been affirmed against Innoscience in the past six months. EPC initially filed the infringement claim against Innoscience in the ITC in May 2023. In response, Innoscience challenged the validity of the EPC patents at issue in the U.S., as well as EPC’s counterpart patents in China.
The China National Intellectual Property Administration upheld the validity of EPC’s counterpart patents in April and May 2024. The ITC’s initial determination in July 2024 similarly confirmed the validity of the challenged patents, and also found that Innoscience infringed EPC’s foundational patent, U.S. Patent No. 8,350,294. The ITC’s final determination is subject to a 60-day Presidential review period, expiring on January 6, 2025.
Original – Efficient Power Conversion
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Vishay Intertechnology, Inc. announced that at electronica 2024, the company will be exhibiting its broad portfolio of passive and semiconductor solutions, and discussing their pivotal role in shaping a sustainable future through the all-electric society. Vishay experts will be on hand to dive into cutting-edge developments in automation, AI, e-mobility, and smart and alternative energy technologies.
In hall C4, booth 478, Vishay will be showcasing its differentiated products and solutions in a range of applications and use cases, including AI, alternative energy, energy storage systems (ESS), ADAS, e-mobility and urban mobility, EV charging infrastructure, HMI, HVAC, grid management, and building automation. In reference designs on display, Vishay’s components — including the company’s latest silicon carbide (SiC) MOSFETs, diodes, and power modules — make up to 70 % or more of the BOMs. Among the highlights taking center stage at Vishay’s booth will be:
AI
- A multi-phase power board for SoCs used in AI applications featuring 100 A smart power stages, ultra low DCR, vertical-mount IHVR inductors, and polymer tantalum capacitors
Alternative Energy
- An auxiliary power system for solar inverters, featuring 1200 V MaxSiC™ series SiC MOSFETs and FRED Pt® hyperfast rectifiers for the conversion of 100 V to 700 V inputs down to 24 V
- A bidirectional 230 V AC / 1500 V DC multi-waveform direct inverter with battery storage, featuring surface-mount MOSFETs with low on-resistance and NTC thermistors
- A 10 kW hybrid solar inverter with MPPT, featuring 1200 V, 15 A SiC diodes
e-Mobility
- An intelligent battery shunt built on WSBE Power Metal Strip® resistors, with low TCR and a CAN FD interface for 400 V / 800 V systems
- A 22 kW bidirectional 800 V to 800 V power converter for OBCs featuring SiC power modules
- A 4 kW bidirectional 800 V to 48 V power converter for auxiliary power featuring Si and SiC MOSFETs
- Active discharge circuits with wirewound safety resistors and MOSFET drivers for 400 V / 800 V DC-Link capacitors
ADAS
- A DMS / CMS system in which IR LEDs shut off when a user comes too close, featuring high accuracy ambient lights sensors with I²C interfaces; reflective optical sensors with transistor output; and fully integrated proximity and ambient lights sensors with infrared emitters, I²C interfaces, and interrupt functions
ESS
- Isolated busbar current sensors with analog output in which an isolation amplifier transmits voltage signals from a WSBE shunt and WSL2726 resistor
HMI and EMI Suppression
- An HMI featuring IHPT series haptic feedback actuators with Immersion Corporation licenses
- A multi-axis robot capturing and displaying the EMI performance of IHLE® inductors and competing devices running side by side
Grid Management and Power Conversion
- A smart meter and gateway for the real-time monitoring of energy consumption and generation in the home
- A bidirectional 72 V / 12 V DC/DC converter with Transzorb® TVS for telecom power supplies
Additional reference designs and demonstrations being offered by Vishay at electronica 2024 will include isolated AC/DC voltage sensors for high voltage networks; a BMS optical communication system; a compact 800 V power distribution solution; a 48 V, 15 kW traction inverter; a 48 V, 3 kW on-board charger; a 30 kW fast charger; a BLDC motor control board for heat pumps; a smart smoke, CO, and heat detector with supercapacitor backup; a photovoltaic energy harvester featuring ENYCAP® capacitors; a dual-side cooled, low voltage BLDC motor controller with high thermal efficiency, as well as designs featuring inrush current limiters and sensing thermistor solutions from the company’s latest acquisition: Ametherm.
Original – Vishay Intertechnology
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Wolfspeed, Inc. announced its results for the first quarter of fiscal 2025.
Quarterly Financial Highlights (Continuing operations only. All comparisons are to the first quarter of fiscal 2024.)
- Consolidated revenue of approximately $195 million, as compared to approximately $197 million
- Mohawk Valley Fab contributed approximately $49 million in revenue
- Power device design-ins of $1.5 billion
- Power device design-wins of $1.3 billion
- GAAP gross margin of approximately (19)%, compared to approximately 13%
- GAAP gross margin includes the impacts of underutilization costs primarily in connection with the start of production at the Mohawk Valley Fab. Underutilization was $26.4 million as compared to $34.4 million.
- Non-GAAP gross margin of 3%, compared to 16%
- Ended Q1 with ~$1.7 billion in cash and investments; does not include initial draw down of $250 million from lender group
“This quarter we took action to solidify the capital structure, simplifying our business to accelerate structural profitability and support the build out of our state-of-the-art silicon carbide facilities. We will have a 200mm silicon carbide footprint at Mohawk Valley and North Carolina materials factories that we target to generate approximately $3 billion in revenue annually,” said Wolfspeed CEO, Gregg Lowe. “Last month, we reached a significant milestone by signing a non-binding preliminary memorandum of terms (PMT) for up to $750 million in proposed direct funding under the CHIPS and Science Act and an additional $750 million from our lending group, demonstrating substantial progress towards our funding goals. With this announcement, we now have access to up to $2.5 billion of incremental funding to support our U.S. capacity expansion plans.”
Lowe continued, “To drive operational improvements, we are taking action to enhance efficiency, align our business with current market conditions and become the first silicon carbide company to transition to pure-play 200-millimeter. The transition to a fully 200-millimeter platform allows us to take further initiatives to streamline our cost structure, including closing our manual Durham 150-millimeter Fab, other manufacturing footprint rationalization, and reducing our workforce. Combined, we expect these initiatives will yield approximately $200 million in annual cash savings. In parallel, we remain focused on optimizing our capital structure, further reducing our fiscal 2025 CapEx guidance by $100 million to align the pace of our spend with the broader shift in EV market demand.”
“We delivered 2.5 times year-over-year growth in our automotive business in the first quarter, and we expect our EV revenue to continue to grow throughout calendar 2025, as the total number of car models using a Wolfspeed silicon carbide solution in the power train increased by 4x from 2023 to 2024 and is expected to grow by another approximately 75% year over year in 2025. We also remain confident in the long-term fundamentals of our industrial and energy business. Importantly, we believe the secular trends and long-term growth drivers for our core end markets remain intact, and we expect the actions we are taking today will allow us to become a more efficient and agile organization positioned to capture the long-term growth opportunities ahead,” concluded Lowe.
For its second quarter of fiscal 2025, Wolfspeed targets revenue from continuing operations in a range of $160 million to $200 million. GAAP net loss is targeted at $401 million to $362 million, or $3.14 to $2.84 per diluted share. Non-GAAP net loss is targeted to be in a range of $145 million to $114 million, or $1.14 to $0.89 per diluted share.
Targeted non-GAAP net loss excludes $256 million to $248 million of estimated expenses, net of tax, primarily related to stock-based compensation expense, amortization of discount and debt issuance costs, net of capitalized interest, project, transformation and transaction costs and restructuring and other facility closure costs. The GAAP and non-GAAP targets do not include any estimated change in the fair value of the shares of common stock of MACOM Technology Solutions Holdings, Inc. (MACOM) that we acquired in connection with the sale to MACOM of our RF product line (RF Business Divestiture).
During the first quarter of fiscal 2025, Wolfspeed initiated a facility closure and consolidation plan to optimize its cost structure and accelerate its transition from 150mm to 200mm silicon carbide devices. The costs incurred as a result of this restructuring plan include severance and employee benefit costs, voluntary termination benefits and other facility closure-related costs.
Wolfspeed incurred $87.1 million of restructuring-related costs in the first quarter of fiscal 2025, of which $34.3 million were recognized in cost of revenue, net and $52.8 million were expensed as operating expense in the statement of operations. For the second quarter of fiscal 2025, the Company expects to incur $174 million of restructuring-related costs, of which $34 million will be recognized in cost of revenue, net and the remaining $140 million will be recognized as operating expense.
Original – Wolfspeed
- Consolidated revenue of approximately $195 million, as compared to approximately $197 million
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Stellantis N.V. and Infineon Technologies AG will work jointly on the power architecture for Stellantis’ electric vehicles to support Stellantis’ ambition of offering clean, safe and affordable mobility to all.
To support this, the companies have signed major supply and capacity agreements that will serve as the foundation for the planned collaboration to develop the next generation of power architecture, including:
- Infineon’s PROFET™ smart power switches, which will replace traditional fuses, reduce wiring and enable Stellantis to become one of the first automakers to implement intelligent power network management.
- Silicon carbide (SiC) semiconductors, which will support Stellantis in its efforts to standardize its power modules, improve the performance and efficiency of EVs while also reducing costs.
- AURIX TM microcontrollers, which target the first generation of the STLA Brain zonal architecture.
Stellantis and Infineon are also in the process of extending their cooperation with the implementation of a Joint Power Lab to define the next-generation scalable and intelligent power architecture enabling Stellantis’ software-defined vehicle.
“As outlined in our strategic plan, Dare Forward 2030, we are securing the supply of crucial semiconductor solutions required to continue our transition to an electrified future leveraging innovative E/E architectures for our next-generation platforms,” said Maxime Picat, Stellantis Chief Purchasing and Supplier Quality Officer.
“Infineon is now entering a collaboration and innovation partnership with Stellantis,” said Peter Schiefer, President of Infineon’s Automotive Division. “As the world’s leading automotive semiconductor vendor, we bring our product-to-system expertise and dependable electronics to the table. Our semiconductors drive the decarbonization and digitalization of mobility. They increase the efficiency of cars and enable software-defined architectures that will significantly improve the user experience.”
With the world`s most cost-competitive SiC fab in Kulim, Malaysia, the upcoming 300-millimeter ”Smart Power Fab” in Dresden, Germany, and the joint venture with TSMC and partners (ESMC) as well as accompanying supply agreements with foundry partners, Infineon is ready to fully meet market demand for automotive semiconductor solutions. According to the market research company TechInsights, Infineon is the global number one supplier of automotive microcontrollers with a market share of about 29 percent of the global automotive microcontroller market.
Original – Infineon Technologies
