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Infineon Technologies AG announced its joint Innovation Application Center in Shenzhen with Anker Innovations, a global leader in charging technology. With the center already fully operating, it is paving the way for more energy-efficient and CO2-saving charging solutions that support decarbonization.
Driven by the growing consumer demand for faster charging solutions due to an increasing usage of mobile devices, laptops and other battery-powered devices, the idea of establishing an Anker-Infineon Innovation Application Center dated back to 2021. After two years of preparation, the joint lab now serves as R&D hub for industry experts to develop power-delivery (PD) fast charging solutions with higher power density, mainly based on Infineon’s next-generation Hybrid Flyback (HFB) controller product family and the CoolGaN™ IPS for fast chargers above 100W.
Anker has already brought several successful products to the market, such as the industry-leading 100W+ fast charger device powered by Infineon’s CoolGaN in 2022. With the Innovation Application Center Anker and Infineon will even shorten the application cycle and accelerate the time to market for future products.
“Anker is an important customer for Infineon,” said Christian Burrer, Vice President of Systems & Application Marketing of Power & Sensor Systems Division at Infineon Technologies. “We have already started a strong cooperation in the charging field, with product and system solutions covering several Infineon product lines. In the field of PD charging, we provide our customers a comprehensive product portfolio, including state-of-the-art power controllers, first-class switching power supplies, leading silicon MOSFET and GaN transistor performance, and more.”
Beyond charging solutions, the joint lab is focusing on a more diversified range of consumer applications, driven by Infineon’s expertise in wide-bandgap materials such as gallium nitride (GaN). The acquisition of GaN Systems in 2023 has significantly accelerated Infineon’s GaN roadmap and further strengthens its leadership in power systems through mastery of all relevant power semiconductor technologies.
“In 2023, Anker achieved success in many markets such as China and Europe. This would not have been possible without Infineon’s GaN technology solutions and the strong collaboration between our companies. We look forward to even intensifying our partnership with Infineon”, said by Kang Xiong, General Manager of the charging business unit at Anker Technologies.
Original – Infineon Technologies
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Bourns, Inc. announced it is further expanding its sales presence in Japan by signing Macnica Altima Company as a new distributor partner. Macnica Altima Company was selected for their excellent Japanese Tier 1 customer relationships, especially those in the automotive market, and will be representing Bourns’ full line of standard component products.
“Adding Macnica is part of Bourns’ strategic sales channel growth initiative in Asia. Bourns continues to realize increasing demand for our products from across the Asia-Pacific region. We were looking for a strong, knowledgeable business partner in Japan and found it with Macnica’s excellent sales team,” said James Harrington and Senior Vice President of Worldwide Sales at Bourns.
“We are honored to be selected to represent Bourns’ innovative components in Japan. Macnica is known for our trusted sales and support teams that have particular knowledge of next generation vehicle applications. We offer the full strength of our organization’s market and technical expertise to Bourns in helping them realize continued growth and success in Japan,” said Kazuyuki Sawada, Vice President at Macnica Altima Company.
Original – Bourns
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ROHM has added a lineup of compact 600V Super Junction MOSFETs R6004END4 / R6003KND4 / R6006KND4 / R6002JND4 / R6003JND4. These devices are ideal for small lighting power supplies, pumps, and motors.
In recent years, power supplies for lighting and motors for pumps are required to be smaller as devices become more sophisticated – spurring the demand for compact MOSFETs that are essential for switching operation.
Generally, however, it has been difficult to reduce the size of Super Junction MOSFETs while maintaining an optimal balance between high breakdown voltage and low ON resistance. In response, after reviewing the shape of the mounted chip, ROHM was able to develop 5 models in the SOT-223-3 package (6.50mm × 7.00mm × 1.66mm) – providing a smaller, lower profile form factor without compromising the performance of conventional products.
Compared to the conventional TO-252 package (6.60mm × 10.00mm × 2.30mm), ROHM’s new products reduce area and thickness by 31% and 27% – contributing to smaller, lower profile applications. At the same time, the same land pattern (footprint) as the TO-252 package can be used, enabling mounting on existing circuit boards without modification.
Offering distinctive features, three of the models optimized for compact power supplies. The R6004END4, characterized by low noise, is suitable for applications where noise is a concern, while the R6003KND4 and R6006KND4, capable of high-speed switching, are ideal for sets requiring low loss, high efficiency operation.
The R6002JND4 and R6003JND4 utilize proprietary PrestoMOS technology to achieve significantly lower switching losses by speeding up reverse recovery time (trr), making them well-suited for motors-equipped devices.
Supporting materials such as application notes, technical documents, and SPICE simulation models for each product are available on ROHM’s website free of charge to enable quick market introduction.
Going forward, ROHM will continue to expand its Super Junction MOSFET lineup in different packages and even lower ON resistances that contribute to solving social issues such as environmental protection by reducing power consumption in variety devices.
Product Lineup
For compact power supplies
Part No. Data
SheetPolarity
[ch]VDSS
[V]ID
[A]RDS(on) [Ω]
*VGS=10VQg [nC]
*VGS=10VPackage
[mm]Typ. Max. Typ. R6004END4 N 600 2.4 0.90 0.98 15 
SOT-223-3
(6.50×7.00×1.66)R6003KND4 1.3 1.30 1.50 8 R6006KND4 2.8 0.72 0.87 12 For motors
Part No. Data
SheetPolarity
[ch]VDSS
[V]ID
[A]RDS(on) [Ω]
*VGS=15VQg [nC]
*VGS=15Vtrr
[ns]Package
[mm]Typ. Max. Typ. Typ. R6002JND4 N 600 1.0 2.50 3.25 7 40
SOT-223-3
(6.50×7.00×1.66)R6003JND4 1.3 1.65 2.15 8 42 Application Examples
• R6004END4 / R6003KND4 / R6006KND4: Lighting, Air conditioners, Refrigerators, etc.
• R6002JND4 / R6003JND4: Motors for pumps, fans, copiers, etc.Original – ROHM
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Alpha and Omega Semiconductor Limited (AOS) announced the AONA66916, a 100V MOSFET packaged in the company’s innovatively designed top and bottom side cooling DFN 5 x 6 package. Designers have long trusted AOS power semiconductors as essential components that help them meet a wide variety of high performance application requirements.
Now, in delivering a state-of-the-art package that keeps its semiconductor products cooler, AOS is taking a huge step in enabling engineers to develop more efficient designs in telecommunications and industrial applications that must frequently operate in harsh conditions.
Typically, when using the standard DFN 5×6 package, the bottom contact is the main contributor for cooling, and most of the heat generated by the Power MOSFETs will be transferred to the PCB. This increases the PCB thermal management design considerations to meet system requirements. AOS’ new top and bottom cooling DFN 5×6 package is designed to achieve the highest heat transfer between the exposed top contact and heat sink due to its large surface contact area construction.
This allows the device to achieve a low thermal resistance (Rthc-top max) of 0.5°C / W with results being transferred to the PCB board, enabling significant thermal performance improvements. The top exposed DFN 5×6 package of the AONA66916 shares the same 5mm x 6mm footprint as AOS’ standard DFN 5×6 package, eliminating the need to modify existing PCB layouts.
Another benefit of the AONA66916 is that it utilizes AOS’ 100V AlphaSGT™ technology, providing excellent FOM for balanced performance in hard switching applications. AONA66916 has a maximum RDS(on) rating of 3.4mOhms and has a 175°C junction temperature rating.
“Cooling the power MOSFET in high power design can be challenging, and AOS has successfully addressed this essential issue with our advanced top exposed package design. It not only enables better thermal transfer from its top side exposed contact to heat sink due to large exposed surface area, our new package delivers a much cooler device that contributes to a more efficient and robust final design,” said Peter H. Wilson, Marketing Sr. Director of the MOSFET product line at AOS.
Original – Alpha and Omega Semiconductor
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Texas Instruments Incorporated reported fourth quarter revenue of $4.08 billion, net income of $1.37 billion and earnings per share of $1.49. Earnings per share included a 3-cent benefit that was not in the company’s original guidance.
Regarding the company’s performance and returns to shareholders, Haviv Ilan, TI’s president and CEO, made the following comments:
- “Revenue decreased 10% sequentially and 13% from the same quarter a year ago. During the quarter we experienced increasing weakness across industrial and a sequential decline in automotive.
- “Our cash flow from operations of $6.4 billion for the trailing 12 months again underscored the strength of our business model, the quality of our product portfolio and the benefit of 300mm production. Free cash flow for the same period was $1.3 billion.
- “Over the past 12 months we invested $3.7 billion in R&D and SG&A, invested $5.1 billion in capital expenditures and returned $4.9 billion to owners.
- “TI’s first quarter outlook is for revenue in the range of $3.45 billion to $3.75 billion and earnings per share between $0.96 and $1.16. We now expect our 2024 effective tax rate to be about 13%.”
Original – Texas Instruments
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Qorvo® unveiled an automotive-qualified silicon carbide (SiC) field effect transistor (FET) offering an industry-best 9mΩ RDS(on) in a compact D2PAK-7L package. This 750V SiC FET is the first in a new family of pin-compatible SiC FETs from Qorvo with RDS(on) options up to 60mΩ, making them well suited for electric vehicle (EV) applications, including on-board chargers, DC/DC converters and positive temperature coefficient (PTC) heater modules.
The UJ4SC075009B7S features a 9mΩ typical RDS(on) at 25°C needed for reducing conduction losses and maximizing efficiency in high voltage, multi-kilowatt automotive applications. Its small, surface-mount package enables automated assembly flows and reduces customer manufacturing costs. This new 750V family complements Qorvo’s existing 1200V and 1700V automotive SiC FETs in D2PAK packaging to form a complete portfolio addressing EV applications that span 400V and 800V battery architectures.
Ramanan Natarajan, director of Product Line Marketing for Qorvo’s Power Products, said, “The launch of this new family of SiC FETs demonstrates our commitment to providing EV powertrain designers the most advanced and efficient solutions for their unique automotive power challenges.”
These fourth generation SiC FETs leverage Qorvo’s unique cascode circuit configuration, in which a SiC JFET is co-packaged with a Si MOSFET to produce a device with the efficiency advantages of wide bandgap switch technology and the simpler gate drive of silicon MOSFETs. Efficiency in SiC FETs is dependent on conduction losses, and Qorvo’s cascode/JFET approach enables reduced conduction losses through industry-best RDS(on) and body diode reverse voltage drop.
The key features of the UJ4SC075009B7S include:
- Threshold voltage VG(th): 4.5V (typical) allowing 0 to 15V drive
- Low body diode VFSD: 1.1V
- Maximum operating temperature: 175°C
- Excellent reverse recovery: Qrr = 338 nC
- Low gate charge: QG = 75 nC
- Automotive Electronics Council (AEC) Q101-qualified
Original – Qorvo
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MCC Semi launched the components engineered to satisfy the diverse requirements of demanding applications: eight low-profile Schottky barrier rectifiers with a common cathode configuration, low forward voltage, and countless possibilities.
A sleek and compact TO-263AC package delivers a typical height of only 1.7mm, translating to compatibility with the popular D2PAK footprint and seamless integration into existing designs.
Engineered to reduce power losses and optimize performance you can count on, these components are available in working voltage ranges from 45V to 200V and a forward current of 20A to 30A per device.
Ideal for freewheeling diodes, switch-mode power supplies, motor controls, and many other rugged applications, MCC’s selection of Schottky barrier rectifiers is a go-to solution when space is limited, but expectations are not.
Features & Benefits:
- Low forward voltage design minimizes power losses
- Low-profile TO-263AC package with a typical height of 1.7mm for space-saving performance
- Compatible with the popular D2PAK footprint for added versatility
- Wide working voltage range from 45V to 200V
- Forward current options of 20A and 30A per device
Original – Micro Commercial Components
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Mitsubishi Electric Corporation announced the coming release of six new J3-Series power semiconductor modules for various electric vehicles (xEVs), featuring either a silicon carbide metal-oxide semiconductor field-effect transistor (SiC-MOSFET) or a RC-IGBT (Si), with compact designs and scalability for use in the inverters of electric vehicles (EVs) and plug-in hybrid electric vehicles (PHEVs). All six J3-Series products will be available for sample shipments from March 25.
The new power modules will be exhibited at the 38th Electronics R&D, Manufacturing and Packaging Technology Expo (NEPCON JAPAN 2024) from January 24 to 26 at Tokyo Big Sight, Japan, as well as other exhibitions in North America, Europe, China and additional locations.
As power semiconductors capable of efficiently converting electricity expand and diversify in response to decarbonization initiatives, the demand is increasing for SiC power semiconductors offering significantly reduced power loss. In the xEV sector, power semiconductor modules are used widely in power conversion devices such as inverters for xEV drive motors.
In addition to extending the cruising range of xEVs, compact, high-power, high-efficiency modules are needed to further downsize batteries and inverters. But due to the high safety standards set for xEVs, power semiconductors used in drive motors must be more reliable than those used in general industrial applications.
Development of these SiC products was partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO).
Original – Mitsubishi Electric
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Infineon Technologies AG and Wolfspeed, Inc. announced the expansion and extension of their existing long-term 150mm silicon carbide wafer supply agreement, originally signed in February 2018. The extended partnership includes a multi-year capacity reservation agreement.
It contributes to Infineon’s general supply chain stability, also with regard to the growing demand for silicon carbide semiconductor products for automotive, solar and EV applications and energy storage systems.
“As the demand for silicon carbide devices continues to increase, we are following a multi-source strategy to secure access to a high-quality, global and long-term supply base of 150mm and 200mm SiC wafers. Our prolonged partnership with Wolfspeed further strengthens Infineon’s supply chain resilience for the coming years,” said Jochen Hanebeck, CEO of Infineon Technologies. “We have been working with Wolfspeed for more than 20 years to bring the promise of silicon carbide to the automotive, industrial and energy markets, and to help customers leverage this energy-efficient technology to foster decarbonization.”
The adoption of silicon carbide-based power solutions is rapidly growing across multiple markets. Silicon carbide solutions enable smaller, lighter and more cost-effective designs, converting energy more efficiently to unlock new clean energy applications. To better support these growing markets, Infineon is continuously diversifying its supplier base to secure access to high-quality silicon carbide substrates.
“Wolfspeed is the world’s leader in silicon carbide production. We are the catalyst in the industry transition to silicon carbide, providing high-quality materials to key customers like Infineon, a leading supplier in both the automotive and industrial markets, while also scaling our capacity footprint,” said Wolfspeed president and CEO Gregg Lowe. “Industry estimates indicate demand for silicon carbide devices, as well as the supporting material, will grow substantially through 2030, representing a $20 billion annual opportunity. We are very pleased to continue our partnership with Infineon and to serve as a major supplier of silicon carbide wafers in the years ahead.”
Original – Infineon Technologies
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Bourns, Inc. announced it will exhibit its expanding portfolio of advanced high voltage application solutions at the upcoming APEC 2024 Conference. As one of the leading power conversion components suppliers worldwide, Bourns continually develops innovative technology to meet ever-increasing requirements for reliable and safe communication in a growing group of high voltage electric vehicle (EV) and other high energy storage systems.
- Single channel signal transformer with integrated common mode choke
- Only supplier with transformer rated at 1500 VDC
- Industry’s first planar signal BMS transformer
- Continued expansion of WBG evaluation partnership with Wolfspeed
- Emphasizes Bourns’ custom magnetics design capabilities
- Transformative space-saving circuit protection innovations
- Expanded line of intelligent current sensor products
- Highly-efficient silicon carbide (SiC) diode products for increasing power densities
- High power shunt resistors for accurate BMS monitoring
Original – Bourns
- Single channel signal transformer with integrated common mode choke
