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MCC Semi announced the latest lineup of innovative bridge rectifiers — GBUA10M-BP, GBUA4M-BP, and GBUA6M-BP. With 1000V capacity and a low profile, these components deliver unmatched excellence in the smallest of spaces.
Fully compatible with the GBU pin layout, these rectifiers boast an outstanding 42% reduction in height, creating more room for design flexibility. Power adapters, lighting systems, and other applications with space and height constraints are ideal for power rectification with these compact powerhouses.
Available in three high-voltage options with current ratings from 4A to 10A, MCC’s new bridge rectifiers ensure the performance and reliability you need in a space-saving JC package.
Whichever option you choose, you’ll take advantage of cost and energy savings on top of uncompromising efficiency and performance.
Features & Benefits:
- High voltage capacity of 1000V
- Current ratings from 4A to 10A
- High thermal stability
- Low profile design
- Space-saving construction
- Cost-effective solution
- Compatible with GBU pin layout
- Compact JC package
Original – Micro Commercial Components
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STMicroelectronics has been awarded “Top Employer” of the year in Italy for the third consecutive time. This award is the official recognition to companies excellent in HR policies and strategies and in their implementation to contribute to the well-being of emplyees, and improve the working environment.
In Italy STMicroelectronics has 13 sites with more than 12,500 employees, more than 3,400 in R&D.
On top of that, STMicroelectronics has been named “Top Employer” in France for the fourth time in a row.
Every year, the Top Employers Institute program certifies companies according to their participation and their results in the “HR Best Practices Survey”. This survey covers 6 major HR areas divided into 20 themes such as talent management strategy, the work environment, talent acquisition, training and skills development, well-being at work, or diversity and inclusion.
This year, the program has certified more than 2,300 companies worldwide present in 121 countries, with more than 12 million employees impacted. STMicroelectronics is one of the 110 companies that have received the certification in France.
Original – STMicroelectronics and STMicroelectronics
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Transphorm, Inc. announced availability of two new SuperGaN® devices in a 4-lead TO-247 package (TO-247-4L). The new TP65H035G4YS and TP65H050G4YS FETs offer a 35 mOhm and 50 mOhm on resistance respectively, complete with a kelvin-source terminal that gives customers versatile switching capabilities with even lower energy losses.
The new products will run on Transphorm’s well-established GaN-on-Silicon substrate manufacturing process that is cost-effective, reliable, and well-suited for high volume manufacturing on silicon production lines. The 50 mOhm TP65H050G4YS FET is currently available while the 35mOhm TP65H035G4YS FET is sampling and slated for release in calendar Q1’2024.
Transphorm’s 4-lead SuperGaN devices can serve as an original design-in option or as a drop-in replacement for 4-lead silicon and SiC solutions supporting power supplies at 1 kilowatt and up in a wide range of data center, renewables, and broad industrial applications. As noted, the 4-lead configuration offers flexibility to users for further improved switching performance.
In a hard-switched synchronous boost converter, the 35 mOhm SuperGaN 4-lead FET reduced losses by 15 percent at 50 kilohertz (kHz) and by 27 percent at 100 kHz when compared to a SiC MOSFET device with a comparable on resistance.
Transphorm’s SuperGaN FETs are known for delivering differentiating advantages such as:
- Industry-leading robustness with a +/- 20 V gate threshold and a 4 V noise immunity.
- Easier designability by reducing the amount of circuitry required around the device.
- Easier drivability as FETs can pair with well-known, off-the shelf drivers common to silicon devices.
The TO-247-4L devices offer the same robustness, designability, and drivability with the following core specifications:
Part Number Vds (V) min Rds(on) (mΩ) typ Vth (V) typ Id (25°C) (A) max Package Variation TP65H035G4YS 650 35 3.6 46.5 Source TP65H050G4YS 650 50 4 35 Source “We continue to expand our product portfolio to bring to market GaN FETs that help customers leverage our SuperGaN platform performance advantages in whatever design requirement they may have,” said Philip Zuk, Senior Vice President, Business Development and Marketing, Transphorm.
“The four-lead TO-247 package provides flexibility for designers and customers seeking even greater power system loss reductions with little to no design modifications on silicon or silicon carbide systems. It’s an important addition to our product line as we ramp into higher power applications.”
Original – Transphorm
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SemiQ will be exhibiting its latest portfolio of advanced silicon carbide (SiC) modules at the Applied Power Electronics Conference (APEC) in Long Beach, CA February 25-29, 2024.
Visitors to SemiQ’s booth #2245 will have the first opportunity to explore the latest QSiC™ 1200V SiC modules. These modules are designed to operate reliably in challenging conditions and enable high-performance, high-density implementation while minimizing both dynamic and static losses. Crafted from high-performance ceramics, the modules are available in SOT-227, half-bridge and full-bridge options.
The new QSiC MOSFET modules support a variety of innovative automotive and industrial power applications where efficiency, power density and performance are critical design criteria. These include EV charging, on-board chargers (OBCs), DC-DC converters, E-compressors, fuel cell converters, medical power supplies, energy storage systems, solar and wind energy systems, data center power supplies and UPS/PFC circuits.
“We’re excited to showcase our new family of QSiC™ 1200V MOSFET modules at APEC and look forward to empowering engineers across the renewable energy, automotive, medical, and industrial sectors to build robust systems,” said Dr. Timothy Han, President at SemiQ.
“This family is a testament to SemiQ’s dedication to excellence in semiconductor technology. Our power modules stand out not just for their high performance, but also for the rigorous testing that ensures reliability. All modules have undergone testing exceeding 1350V. From gate burn-in testing to stress tests like HTRB and H3TRB, we prioritize stability and quality.”
Held annually, APEC is a three-day technology event that focuses on the practical and applied aspects of the power electronics business. The conference provides ample opportunities for networking, offering a range of activities from technical and industry sessions to social events and exhibitor presentations. APEC caters to a diverse group of professionals in the field of power electronics, ranging from designers of power supplies, DC-DC converters, and motor drives to equipment OEMs that use power supplies, as well as manufacturers and suppliers.
Additionally, professional education seminars are available for attendees who wish to stay updated on the latest industry trends. These seminars offer in-depth discussions of important and complex power electronics topics that can vary from introductory to advanced in technical level.
Original – SemiQ
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Infineon Technologies AG announced its partnership with OMRON Social Solutions Co. Ltd., a pioneering company in social systems technology. Combining Infineon’s first-class gallium nitride (GaN) based power solutions with the innovative circuit topology and control technology of OMRON now enables one of Japan’s smallest and lightest vehicle-to-everything (V2X) charging systems by OMRON Social Solutions.
This partnership will further drive innovation towards wide bandgap materials in power supplies, help to accelerate the transition to renewable energies, a smarter grid, and the adoption of electric vehicles, while fostering decarbonization and digitalization.
For the V2X system, KPEP-A series, Infineon’s CoolGaN™ technology is utilized combined with a unique control technology. OMRON Social Solutions has upgraded its EV charger and discharger system now allowing for bi-directional charging and discharging paths between renewable energy sources, the grid, and EV batteries.
The KPEP-A series is one of the smallest and lightest multi-V2X systems in Japan with a 60% reduction in size and weight compared to similar conventional charger and discharger designs yet providing a charging capability of 6 kW. With the integration of Infineon’s CoolGaN solution, the power efficiency of the V2X systems has increased by more than 10% at light load and around 4% at rated load. By improving efficiency and a reduction in size and weight, the new system allows easier installation and maintenance while enabling more elegant designs and offering a wider range of options for installation locations.
“We are thrilled to partner with OMRON Social Solutions as our CoolGaN based solutions directly contribute to speed up the transition to renewable energies which reduces CO2 emissions and drives decarbonization,” said Adam White, Division President Power & Sensor Systems at Infineon. “It will also make charging of electric vehicles easier and more convenient for consumers, helping to overcome one of the biggest barriers to EV adoption.”
Atsushi Sasawaki, Managing Executive Officer and Senior General Manager for Energy Solutions Business of OMRON Social Solutions said: “Having access to a broad portfolio of WBG solutions significantly increases the functionality, performance and quality of our products. With Infineon, we get the best-in-class application know-how for creating new and improved charging and discharging systems, providing a high level of satisfaction for our customers and end-users. We look forward to further developing GaN- and SiC-based power solutions together with Infineon to help drive renewable energy and electric vehicles.”
Wide bandgap semiconductors made of silicon carbide and gallium nitride differ significantly from conventional semiconductors as they allow for greater power efficiency, smaller size, lighter weight, and lower overall cost. Infineon offers the broadest product and technology portfolio including silicon, silicon carbide and gallium-nitride-based devices.
As the leading power supplier with more than two decades of heritage in SiC and GaN technology development, Infineon caters to the need for smarter, more efficient energy generation, transmission, and consumption.
Original – Infineon Technologies
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Soitec announced the launch of a new industrial installation allowing wafer rinse water to be partially reused in the production of ultra-pure water for cleanrooms at its French manufacturing facilities.
Thanks to this innovation, the first of its kind in Europe at this scale, Soitec intends to increase significantly the proportion water that can be reused in its industrial processes. The wastewater reuse rate at its historic site in Bernin (Isère) is thereby expected to rise from 19% in 2023 to over 35% in 2024.
This solution, developed by Soitec in Bernin over three years, represents an important milestone in Soitec’s continuous improvement of resource management, one of the key pillars of its sustainable development strategy.
Cyril Menon, Soitec Chief Operations Officer: “This manufacturing process innovation is an illustration of Soitec’s commitment over several years to limit the intake of fresh water, a critical resource for semiconductor materials production. It is a significant milestone that we have reached. The introduction of this new process demonstrates that we can produce more with less, contributing to a more sustainable future.”
Soitec puts efficient management of natural resources at the heart of its commitment to sustainable development. While water is essential for the semiconductor industry, Soitec is well aware that it is a rare and precious resource that must be used responsibly and equitably by all.
From 2015 onwards, Soitec committed itself to a series of action plans to mitigate its impact on water resources. Soitec reduced its overall water consumption per unit produced by 30% between 2021 and 2023, and is targeting a further 30% reduction by 2030.
Original – Soitec
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Renesas Electronics Corporation and Transphorm, Inc. announced that they have entered into a definitive agreement pursuant to which a subsidiary of Renesas will acquire all outstanding shares of Transphorm’s common stock for $5.10 per share in cash, representing a premium of approximately 35% to Transphorm’s closing price on January 10, 2024, a premium of approximately 56% to the volume weighted average price over the last twelve months and a premium of approximately 78% to the volume weighted average price over the last six months.
The transaction values Transphorm at approximately $339 million. The acquisition will provide Renesas with in-house GaN technology, a key next-generation material for power semiconductors, expanding its reach into fast-growing markets such as EVs, computing (data centers, AI, infrastructure), renewable energy, industrial power conversion and fast chargers/adapters.
Demand for highly efficient power systems is increasing as building blocks for carbon neutrality. To address this trend, an industry-wide transition toward wide bandgap (“WBG”) materials, represented by silicon carbide (“SiC”) and GaN, is also being seen. These advanced materials allow a broader range of voltage and switching frequency than conventional silicon-based devices. To build on this momentum, Renesas has announced the establishment of an in-house SiC production line, supported by a 10 year SiC wafer supply agreement.
Renesas now aims to further expand its WBG portfolio with Transphorm’s expertise in GaN, an emerging material that enables higher switching frequency, lower power losses, and smaller form factors. These benefits empower customers’ systems with greater efficiency, smaller and lighter composition, and lower overall cost.
As such, demand for GaN is predicted to grow by more than 50 percent annually, according to an industry study. Renesas will implement Transphorm’s auto-qualified GaN technology to develop new enhanced power solution offerings, such as X-in-1 powertrain solutions for EVs, along with computing, energy, industrial and consumer applications.
“Transphorm is a company uniquely led by a seasoned team rooted in GaN power and with origins from the University of California at Santa Barbara,” said Hidetoshi Shibata, CEO of Renesas. “The addition of Transphorm’s GaN technology builds on our momentum in IGBT and SiC. It will fuel and expand our power portfolio as a key pillar of growth, offering our customers the full ability to choose their optimal power solutions.”
“Combined with Renesas’ world-wide footprint, breadth of solution offerings and customer relationships, we are excited to pave the way for industry-wide adoption of WBG materials and set the stage for significant growth.
This transaction will also allow us to offer further expanded services to our customers and deliver significant immediate cash value to our stockholders,” said Dr. Primit Parikh, Co-founder, President and CEO of Transphorm and Dr. Umesh Mishra, Co-founder and CTO of Transphorm. “Additionally, it will provide a strong platform for our exceptional team to further Transphorm’s leading GaN technology and products.”
The board of directors of Transphorm has unanimously approved the definitive agreement with respect to the transaction and recommended that Transphorm stockholders adopt such definitive agreement and approve the merger. Concurrently with the execution of the definitive agreement, KKR Phorm Investors L.P., which holds approximately 38.6% of Transphorm’s outstanding common stock, has entered into a customary voting agreement with Renesas to vote in favor of the transaction.
The transaction is expected to close in the second half of calendar year 2024, subject to Transphorm stockholder approval, required regulatory clearances and the satisfaction of other customary closing conditions.
Original – Renesas Electronics
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Florian Martens will take over as global Head of Communications & Public Policy at Infineon Technologies AG on 1 March 2024. As Executive Vice President and Chief Communications Officer, he will report to Jochen Hanebeck, CEO of Infineon. Florian Martens succeeds Bernd Hops, who has left Infineon at his own request effective 30 September 2023.
“On its ambitious growth path, Infineon needs to communicate effectively with a wide range of stakeholders. With Florian Martens, we have found an internationally recognized communications professional for this strategic management task. We are very pleased to welcome him to our team with his extensive experience and expertise,” says Jochen Hanebeck, CEO of Infineon Technologies AG.
Florian Martens joins from Siemens AG, where he is responsible for global Media Relations, Executive Communications and Thought Leadership activities since June 2020. Together with his team, he contributed significantly to Siemens’ new external positioning as a leading global technology company.
“Semiconductors are the hearts and brains of our digital world. There is no more exciting and relevant industry for the digital and green transformation. Infineon is a global champion in this key industry and I am delighted to be part of this team going forward. At the same time, I would like to thank all my colleagues for a great time at Siemens,” says Florian Martens.
Before joining Siemens, Florian Martens spent 15 years at Daimler AG, most recently as Head of Global Communications at Daimler Truck AG, the world’s largest commercial vehicle manufacturer. At Daimler, he held various management positions in Germany and abroad, including in Corporate Communications and Product Strategy at Mercedes-Benz Passenger Cars. He holds a Bachelor of Science from the University of Wisconsin (Madison USA) and a Masters of Business Administration from the Technical University of Munich.
Original – Infineon Technologies
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Infineon Technologies AG has formalized an agreement with silicon carbide (SiC) supplier SK Siltron CSS. Under the agreement, SK Siltron CSS will provide Infineon with competitive and high-quality 150-millimeter SiC wafers, supporting the production of SiC semiconductors. In a subsequent phase, SK Siltron CSS will play an important role in assisting Infineon’s transition to a 200-millimeter wafer diameter.
“For Infineon, supply chain resiliency is about implementing a multi-supplier strategy and thriving in times of adversity to create new growth opportunities and drive decarbonization,” said Angelique van der Burg, Chief Procurement Officer at Infineon. “We are excited to partner with SK Siltron CSS to serve the growing SiC demand of our broad customer base with new energy-efficient and top-quality products, matching the highest standards in the SiC market.”
“With decades of experience in silicon carbide materials and manufacturing, we bring unparalleled knowledge to our sustainably manufactured compound semiconductor solutions. This wealth of experience is a cornerstone in our partnership with Infineon,” said Jianwei Dong, Ph.D., CEO of SK Siltron CSS. “This long-term supply agreement marks the synergy of our extensive expertise and Infineon’s vision to make life easier, safer and greener for generations to come.”
Original – Infineon Technologies
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Navitas Semiconductor announced the appointment of Janet Chou as Executive Vice President, Chief Financial Officer and Treasurer, effective upon the filing of Navitas’ 2023 annual report on Form 10‑K expected at the end of February.
Chou will report to Gene Sheridan, President and CEO, and will replace Ron Shelton, Senior Vice President, CFO and Treasurer, who announced his intention to pursue other opportunities effective March 15, 2024. Following the Form 10-K filing, Shelton will provide advice and assistance to Sheridan and transition assistance and support to Chou.
“Under Ron’s financial leadership, we have executed a significant and successful capital raise, built a strong investor and analyst base, and completed three strategic acquisitions—all while delivering predictable and impressive financial results,” said Sheridan. “While I wish Ron all the best in his next career move, I am also very excited to welcome Janet Chou as our new CFO. I am confident her deep experience in financial leadership at global, multi-$B public semiconductor leaders will be invaluable as we scale Navitas to new levels in coming years.”
Chou was previously Vice President and CFO of Global Operations for Western Digital Corporation, a $12 billion Nasdaq-listed developer, manufacturer, and provider of data storage devices and solutions. She was previously CFO of JCET Group Co., Ltd., a $5 billion global semiconductor company listed on the Shanghai Stock Exchange. Before that Chou progressed through a series of senior financial management roles at NXP Semiconductors N.V., a $13 billion global semiconductor manufacturer, including VP and CFO for Greater China, and VP and CFO of the Portable & Computing Business Unit.
Chou is a certified public accountant and holds a bachelor’s degree in accounting from the University of Texas, San Antonio, and an MBA from Santa Clara University.
Original – Navitas Semiconductor
