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Applied Materials, Inc. and CEA-Leti announced an expansion of their longstanding collaboration to focus on developing differentiated materials engineering solutions for several specialty semiconductor applications.
The joint lab, which represents CEA-Leti’s highest level of collaboration, aims to accelerate device innovations for Applied’s customers serving ICAPS markets (IoT, Communications, Automotive, Power and Sensors). Technology applications in those fields include photonics, image sensors, RF communications components, power devices and heterogeneous integration.
Demand for ICAPS applications and devices is being driven by industrial automation, the Internet of Things (IoT), electric vehicles, green energy and smart grid infrastructure, among other major high-growth markets. Projects at the joint lab will focus on developing solutions for a variety of materials engineering challenges to enable the next wave of ICAPS device innovation. The joint lab features several of Applied Materials’ 200mm and 300mm wafer processing systems and leverages CEA-Leti’s world-class capabilities for evaluating performance of new materials and device validation. Improvements in power consumption, performance and area/cost, along with faster time to market (PPACt™), will be key objectives of the joint team.
“CEA-Leti and Applied Materials aim to accelerate innovation and advance the roadmaps of a wide range of specialty semiconductor technologies,” said Aninda Moitra, corporate vice president and general manager of Applied Materials’ ICAPS business. “Our work at the joint lab builds upon more than a decade of successful collaboration and further strengthens our combined ability to enable faster time to innovation for ICAPS chipmakers.”
“For the past 10 years, Applied Materials and CEA-Leti have collaborated through multiple, specific joint development programs, which have set the stage for establishing our new joint lab,” said Sébastian Dauvé, the institute’s CEO. “Past projects included work in domains such as advanced metrology, materials for memory applications and optical devices, bonding techniques, materials deposition and film growth (PVD, CVD, ECD, Epitaxy) and chemical-mechanical planarization (CMP). Our results brought high value to both partners and to customers around the world, and we look forward to expanding our engagement with this new lab.”
“The joint lab, which is based at CEA-Leti, will host Applied Materials scientists and involve some of its latest-generation equipment,” Dauvé said. “In addition to developing differentiated technological solutions for Applied’s customers, the work performed at the joint lab will help overcome current technical hurdles in support of CEA-Leti’s internal R&D programs.”
Original – Applied Materials
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Coherent Corp. announced that it has closed the $1 billion aggregate investment by DENSO CORPORATION and Mitsubishi Electric Corporation in Coherent’s silicon carbide semiconductor business.
Under the terms of the transaction announced on October 10, 2023, DENSO and Mitsubishi Electric each invested $500 million in exchange for a 12.5% non-controlling ownership interest in the Business, with Coherent owning the remaining 75%. Coherent has separated and contributed the Business to a new subsidiary that will operate the Business. Going forward, all operating and capital expenses of the Business will be funded by the Business. Coherent will control and operate the Business, which will continue to be led by Sohail Khan, Executive Vice President, Wide-Bandgap Electronics.
In connection with the transaction, the Business has entered into arm’s-length long-term supply arrangements with DENSO and Mitsubishi Electric that support their demand for 150 mm and 200 mm silicon carbide (SiC) substrates and epitaxial wafers.
“As I mentioned in October, we are excited to expand our strategic relationships with DENSO and Mitsubishi Electric to capitalize on the significant demand for silicon carbide,” said Dr. Vincent D. Mattera, Jr., Chair and CEO, Coherent.
“I believe that such a close relationship with two leaders in SiC power devices and modules is the best path forward to maximize shareholder value and position the Business for long-term growth. The investments from our strategic partners will be used to accelerate our capacity expansion plans and help sustain our leadership position, while ensuring the development of a robust and scalable supply for the rapidly growing market for SiC-based power electronics, largely driven by the explosive growth of the global electric vehicle market.”
“Through this strategic relationship with Coherent, we will secure a stable procurement of SiC wafers, which are critical for battery electric vehicles, and contribute to the realization of a carbon-neutral society by promoting the widespread adoption of BEVs in all regions around the world,” said Shinnosuke Hayashi, President & COO, Representative Member of the Board at DENSO.
Dr. Masayoshi Takemi, Executive Officer, Group President, Semiconductor & Device for Mitsubishi Electric, said, “We are pleased that this investment has been successfully completed. Going forward, we will further strengthen our collaboration with Coherent, leveraging their capabilities in development and manufacturing of SiC substrates, to achieve solid growth of our SiC power device business and contribute to a more sustainable world through decarbonization.”
When incorporated into electric vehicles and industrial infrastructure, SiC-based power electronics have demonstrated the potential to significantly reduce carbon dioxide emissions and accelerate the transition to a cleaner and more energy-efficient world.
Market estimates indicate that the SiC total addressable market will grow from $3 billion in 2022 to $21 billion in 2030, representing a 28% compound annual growth rate.
The transaction builds on Coherent’s more than two decades of demonstrated leadership in SiC materials. In recent years, the Company has aggressively invested to scale its manufacturing of 150 mm and 200 mm substrates to address this underserved market.
Over the past two years, Coherent has invested aggressively in capital and R&D for SiC. The closing of this $1 billion combined investment into the Business will accelerate the Company’s capital plans in the coming years. Specifically, the investment will fund the manufacturing expansion of the Business and, in combination with the concurrent supply agreements, enhance its position in the market.
The transaction enables Coherent to increase its available free cash flow to provide greater financial and operational flexibility to execute its capital allocation priorities, as it expects the aggregate $1 billion investment will be used to fund future capital expenditure requirements of the Business.
Original – Coherent
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The NXP Foundation, the nonprofit organization associated with NXP Semiconductors, has announced the official opening of the NXP Advanced Manufacturing Lab at Austin Community College.
The NXP Advanced Manufacturing Lab is co-located with the ACC High School Advanced Manufacturing IMPACT Academy at ACC Highland, where students can work toward college credits while they are still in high school.
The lab was announced last year as part of a $250,000 donation to the Austin Community College District (ACC) Foundation in support of the school’s Engineering Technology and Advanced Manufacturing Program. In addition to the lab, NXP’s donation includes scholarship funds targeting candidates from the Advanced Manufacturing Academy.
The NXP Advanced Manufacturing Lab demonstrates NXP’s ongoing commitment to promote and improve science, technology, engineering and math (STEM) education in the local Austin community.
The training tools provided at the lab will help support and extend educational curriculum and resources for both adult and high school students entering the semiconductor industry and other advanced manufacturing occupations. Tools and support will address education in Industry 4.0 components, fully factory automation, reading schematics and navigating feedback control systems.
Original – NXP Semiconductors
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STMicroelectronics’ MasterGaN1L and MasterGaN4L introduce the next generation of integrated gallium-nitride (GaN) bridge devices that simplify power-supply design leveraging wide-bandgap technology to achieve the latest ecodesign targets.
ST’s MasterGaN family combines 650V GaN high electron-mobility transistors (HEMT) with optimized gate drivers, system protection, and an integrated bootstrap diode that helps power the device at startup. Integrating these features saves designers tackling the complex gate-drive requirements of GaN transistors. Housed in a compact power package, the devices also enhance reliability, cut the bill of materials, and ease circuit layout.
The latest devices contain two GaN HEMTs connected in half-bridge configuration. The arrangement is suitable for building switched-mode power supplies, adapters, and chargers with active-clamp flyback, active-clamp forward, and resonant converter topologies.
The MasterGaN1L and MasterGaN4L are pin compatible with MasterGaN1 and MasterGaN4 respectively. Compared to the earlier devices, they have a newly optimized turn-on delay that allows working at higher frequency and higher efficiency with low load, especially in resonant topologies.
The inputs accept signal voltages from 3.3V to 15V, with hysteresis and pull-down that facilitate connecting directly to a controlling device such as a microcontroller, DSP, or Hall-effect sensors. A dedicated shutdown pin helps designers save system power and the two GaN HEMTs have accurately matched timing with an interlocking circuit to prevent cross-conduction conditions.
The MasterGaN1L HEMTs have 150mΩ RDS(on) and 10A rated current, for use in applications up to 500W. Consuming just 20mW no-load power, and enabling high conversion efficiency, they enable designers to meet stringent industry targets for standby power and average efficiency. The MasterGaN4L HEMTs target applications up to 200W, with 225mΩ RDS(on) and rated current of 6.5A.
The EVLMG1LPBRDR1 and EVLMG4LPWRBR1 demonstration boards are available to help evaluate the features of each device. These boards contain a GaN-based half-bridge power module fine-tuned to work in an LLC application. They help quickly create new topologies leveraging the MasterGaN1L and MasterGaN4L devices without needing a complete PCB design.
Original – STMicroelectronics
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With UK and European companies seeking advanced technology to solve challenges in communications, IoT and automotive applications, many are looking for local support from major solution vendors. Microchip Technology Inc. announced the inauguration of a major new facility at Cambridge Research Park, Cambridge, UK.
At the heart of Microchip’s plans to develop more of its smart, connected and secure solutions in the UK area, the new center will add significant R&D space, which will allow Microchip’s business units to further develop their already broad offering. The new site will help Microchip improve its focus on the needs of several of its highest priority markets, such as IoT, automotive, industrial and consumer.
To gain immediate benefit from the facility, many of Microchip’s highly skilled development engineers and other staff will transfer from the company’s Ely site, with plans in hand to boost the number of employees at the Cambridge site over time.
“The Cambridge site is ideally situated in one the world’s top technology areas and will enable us to attract top talent to build state of the art products and serve our customer base,” said Sumit Mitra, senior corporate vice president of Microchip’s 32-bit microcontroller, microprocessor, wireless, aerospace and development tools business units.
“We have already onboarded a large number of talented and experienced engineers for the new center and expect that the new opportunities we will offer—to develop exciting solutions for the most significant and dynamic technology markets—will further attract the highly talented staff we need.”
“The facility is intended to become a premier Microchip engineering center, employing 200 highly skilled silicon engineering staff and advanced laboratories,” said Neel Das, senior director of Microchip’s 32-bit microcontroller business unit. “Establishing the new facility in Cambridge means we can meet this target by tapping into the wealth of engineering talent that exists in the area. The Cambridge Research Park is a hub of innovation and an excellent venue to develop the high-tech solutions on which we have built our reputation.”
The three-story building will offer approximately 10,000 square feet per floor, providing space to support multiple product lines including 16- and 32-bit microcontrollers, 32-bit microprocessors and wireless connectivity products plus technology development, physical design and human resource support.
Original – Microchip Technology
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MACOM Technology Solutions Holdings, Inc. announced the completion of its acquisition of the radio frequency business of Wolfspeed, Inc. on December 2, 2023. The RF Business is highly complementary to MACOM’s portfolio and creates a compelling combined technology solution.
“We are excited to welcome the RF Business team to MACOM,” said Stephen G. Daly, President, Chief Executive Officer and Chair. “Going forward, we are committed to supporting all product and foundry customers and building upon the RF Business’ established technology to strengthen our leadership position.”
Original – MACOM Technology Solutions
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DENSO Corporation announced changes to its organizational structure, executives’ responsibilities and personnel, effective January 1, 2024.
DENSO has stated at “DENSO DIALOG DAY 2023” that it will evolve from being “a Tier 1 supplier that supports the auto industry” to “a Tier 1 supplier that supports a mobility-centered society”, aiming to maximize the value of the entire mobility society, in addition to vehicles.
To achieve this, DENSO has announced its commitment to three challenges: “evolution of mobility,” “strengthening of foundational technology,” and “creating new value.” To materialize these goals, the following organizational and executive changes will be implemented.
In terms of the executive structure, two executive vice presidents will assume responsibility for the company’s major management resources in the following two areas, accelerating the formulation and execution of growth strategies. Additionally, to strengthen and expand technological development areas that will spur new growth, a Chief Innovation Officer (CIO) position will be established.
Original – DENSO
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Axcelis Technologies, Inc. announced the grand opening of the Company’s new Axcelis Logistics Center, located at 105 Sam Fonzo Drive, Beverly, MA. The Company celebrated this milestone event with a ribbon-cutting ceremony led by President and CEO Russell Low.
The new Axcelis Logistics Center is a state-of-the-art facility designed to optimize Axcelis’ logistics and warehouse operations and provide flex capacity for the Company’s manufacturing operations to support the Company’s growth. The facility, which measures 101,800 square feet, was designed from the ground up to incorporate the latest technologies such as AI-driven autonomous mobile robots (AMRs) and other innovative enterprise-level warehouse automation to provide significant efficiency and improve material handling and flow to the Company’s operations.
The new center is designed to be energy efficient and employee friendly. It features EV charging stations, utilizes US EPA Energy Star rated heating, ventilation and air conditioning equipment and has all LED lighting with advanced motion sensors.
President and CEO Russell Low, commented, “The ribbon cutting represents the culmination of a vision ready to be set in full motion. Our investment in this new facility will allow us to support the Company’s expanding global customer base. We will continue to invest in our employees and infrastructure to ensure we have the necessary skills and capacity required to achieve our $1.3B financial model. We are also excited to provide significant employment opportunities across a wide variety of functions here in Beverly and across the globe. We look forward to continuing to play a vibrant role in our local communities and supply chain.”
The Company plans to seek a 25% tax credit under the U.S. Chips and Science Act relating to its capital investment in the new facility. The CHIPS and Science Act aims to bolster U.S. chip manufacturing to make American semiconductor supply chains more resilient and support national security and access to key technologies.
Original – Axcelis Technologies
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Texas Instruments announced the expansion of its low-power gallium nitride (GaN) portfolio, designed to help improve power density, maximize system efficiency, and shrink the size of AC/DC consumer power electronics and industrial systems. TI’s overall portfolio of GaN field-effect transistors (FETs) with integrated gate drivers addresses common thermal design challenges, keeping adapters cooler while pushing more power in a smaller footprint.
“Today’s consumers want smaller, lighter and more portable power adapters that also provide fast, energy-efficient charging,” said Kannan Soundarapandian, general manager of High Voltage Power at TI.
“With the expansion of our portfolio, designers can bring the power-density benefits of low-power GaN technology to more applications that consumers use every day, such as mobile phone and laptop adapters, TV power-supply units, and USB wall outlets. Additionally, TI’s portfolio also addresses the growing demand for high efficiency and compact designs in industrial systems such as power tools and server auxiliary power supplies.”
The new portfolio of GaN FETs with integrated gate drivers, which includes the LMG3622, LMG3624 and LMG3626, offers the industry’s most accurate integrated current sensing. This functionality helps designers achieve maximum efficiency by eliminating the need for an external shunt resistor and reducing associated power losses by as much as 94% when compared to traditional current-sensing circuits used with discrete GaN and silicon FETs.
TI’s GaN FETs with integrated gate drivers enable faster switching speeds, which helps keep adapters from overheating. Designers can reach up to 94% system efficiency for <75-W AC/DC applications or above 95% system efficiency for >75-W AC/DC applications. The new devices help designers reduce the solution size of a typical 67-W power adapter by as much as 50% compared to silicon-based solutions.
The portfolio is also optimized for the most common topologies in AC/DC power conversion, such as quasi-resonant flyback, asymmetrical half bridge flyback, inductor-inductor-converter, totem-pole power factor correction and active clamp flyback.
To learn more about the benefits of TI GaN for the most common AC/DC topologies, read the technical article, “The benefits of low-power GaN in common AC/DC power topologies.”
TI has a long history of globally owned, regionally diverse internal manufacturing operations, including wafer fabs, assembly and test factories, and bump and probe facilities across 15 worldwide sites. TI has been investing in manufacturing GaN technology for more than 10 years.
With plans to manufacture more than 90% of its products internally by 2030, TI has the ability to provide customers with dependable capacity for decades to come.
Original – Texas Instruments
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Nexperia announced its first silicon carbide (SiC) MOSFETs with the release of two 1200 V discrete devices in 3-pin TO-247 packaging with RDS(on) values of 40 mΩ and 80 mΩ. NSF040120L3A0 and NSF080120L3A0 are the first in a series of planned releases which will see Nexperia’s SiC MOSFET portfolio quickly expand to include devices with a variety of RDS(on) values in a choice of through-hole and surface mounted packages.
This release addresses the market demand for the increased availability of high performance SiC MOSFETs in industrial applications including electric vehicle (EV) charging piles, uninterruptible power supplies (UPS) and inverters for solar and energy storage systems (ESS).
“With these inaugural products, Nexperia and Mitsubishi Electric wanted to bring true innovation to a market that has been crying out for more wide-bandgap device suppliers”, according to Katrin Feurle, Senior Director & Head of Product Group SiC at Nexperia. “Nexperia can now offer SiC MOSFET devices which offer best-in-class performance across several parameters, including high RDS(on) temperature stability, low body diode voltage drop, tight threshold voltage specification as well as a very well-balanced gate charge ratio making the device safe against parasitic turn on. This is the opening chapter in our commitment to producing the highest quality SiC MOSFETs in our partnership with Mitsubishi Electric. Together we will undoubtedly push the boundaries of SiC device performance over the coming years”.
“Together with Nexperia, we’re thrilled to introduce these new SiC MOSFETs as the first product of our partnership”, says Toru Iwagami, Senior General Manger, Power Device Works, Semiconductor & Device Group in Mitsubishi Electric. “Mitsubishi Electric has accumulated superior expertise of SiC power semiconductors, and our devices deliver a unique balance of characteristics.”RDS(on) is a critical performance parameter for SiC MOSFETs as it impacts conduction power losses. Nexperia identified this as a limiting factor in the performance of many currently available SiC devices and used its innovative process technology to ensure its new SiC MOSFETs offer industry-leading temperature stability, with the nominal value of RDS(on) increasing by only 38% over an operating temperature range from 25°C to 175°C. Unlike other many currently available SiC devices in the market.
Nexperia’s SiC MOSFETs also exhibit the very low total gate charge (QG), which brings the advantage of lower gate drive losses. Furthermore, Nexperia balanced gate charge to have an exceptionally low ratio of QGD to QGS, a characteristic which increases device immunity against parasitic turn-on.
Together with the positive temperature coefficient of SiC MOSFETs, Nexperia’s SiC MOSFETs offers also ultra-low spread in device-to device threshold voltage, VGS(th), which allows very well-balanced current-carrying performance under static and dynamic conditions when devices are operated in parallel. Furthermore, low body diode forward voltage (VSD) is a parameter which increases device robustness and efficiency, while also relaxing the dead-time requirement for asynchronous rectification and free wheel operation.
Nexperia is also planning the future release of automotive grade MOSFETs. The NSF040120L3A0 and NSF080120L3A0 are available in production quantities now. Please contact Nexperia sales representatives for samples of the full SiC MOSFET offering.
Original – Nexperia
