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Wolfspeed, Inc. announced that Thomas Seifert and Woody Young have been nominated to Wolfspeed’s Board of Directors (the “Board”). Their nominations will be considered by shareholders at the 2024 Annual Meeting of Shareholders (the “2024 Annual Meeting”), scheduled for December 5, 2024.
Mr. Seifert has served as the Chief Financial Officer of Cloudflare, Inc., a leading internet security company, since June 2017. Prior to joining Cloudflare, Mr. Seifert held executive leadership positions at a number of technology and semiconductor companies, including serving as Chief Financial Officer of Symantec Corporation, Brightstar Corp., and Advanced Micro Devices Inc. Mr. Seifert currently serves as a member of the Board of Directors of First Derivatives plc, an ultra-high-performance analytics software company.
Mr. Young most recently served as the President and a member of the Board of Directors of Solidigm, a flash memory semiconductor company, from October 2022 until August 2023. Mr. Young has over 30 years of experience as an investment banker and is the former Chairman of Mergers and Acquisitions at Perella Weinberg Partners LP. He previously served as the Co-Head of Global Telecommunications, Media, and Technology at Lazard and in similar roles at Merrill Lynch and Lehman Brothers. Mr. Young currently serves as a member of the Board of Directors of Frontier Communications Parent, Inc. (Nasdaq: FYBR), a fiber internet provider.“We are delighted to nominate Thomas Seifert and Woody Young for election to the Wolfspeed Board of Directors,” said Thomas Werner, Chair of the Wolfspeed Board. Mr. Werner continued, “With yesterday’s CHIPS Act capital structure update, I believe the Company successfully took a key step towards funding the execution of its business plan. We believe Thomas and Woody will be valuable additions to the Board as we focus on executing that plan, driving operational execution improvement, and continuing our previously disclosed efforts to explore ways to enhance shareholder value and unlock Wolfspeed’s strategic value.”
Clyde R. Hosein and John B. Replogle, who have served on the Board since 2005 and 2014, respectively, are not standing for re-election and will retire from the Board following the expiration of their terms at the 2024 Annual Meeting. “On behalf of the Board, I want to thank Clyde and John for their dedication and exemplary service to Wolfspeed over many years,” said Mr. Werner.
Original – Wolfspeed
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Ideal Power Inc. announced the start of third-party automotive qualification and reliability testing of B-TRAN™ devices.
“This is a significant milestone in our commercialization roadmap as third-party automotive qualification and reliability testing of B-TRAN™ is now underway. Demonstration of compliance with automotive standards, the most stringent reliability standards for power semiconductor devices, is expected to accelerate the adoption of B-TRAN™ with large industrial customers as well as automotive OEMs and Tier 1 automotive suppliers,” said Dan Brdar, President and Chief Executive Officer of Ideal Power.
Ideal Power successfully performed a critical subset of reliability testing of packaged B-TRAN™ devices in its lab and at a third-party testing site to confirm readiness for third-party automotive qualification and reliability testing. This testing focused on the reliability of packaged B-TRAN™ devices in extreme environmental conditions and under high electrical and thermal stress as well as blocking voltage and shock testing.
All of the tested devices packaged by commercial packaging partner passed these tests indicating a robust B-TRAN™ packaging design. As a result, the Company engaged a third-party to commence full automotive qualification and reliability testing.
The automotive qualification and reliability testing includes a broader array of testing as required by automotive codes and standards utilizing specified parameters and a wide range of test conditions. The testing to achieve automotive qualification requires over a thousand packaged B-TRAN™ devices from multiple wafer runs.
The process includes tens of thousands of power cycles at various current levels, thermal cycling at extreme temperature and humidity levels, blocking voltage and shock and vibration testing, and visual inspection. These tests are designed to expose B-TRAN™ to conditions that are intended to accelerate failure mechanisms and demonstrate the long-term reliability of the devices. Successful completion of B-TRAN™ automotive qualification and reliability testing is expected in the first half of 2025.
Original – Ideal Power
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Affordability combined with high performance and efficiency is the key to making electric mobility accessible to a broader market. That’s why Infineon Technologies AG is introducing the HybridPACK™ Drive G2 Fusion, establishing a new power module standard for traction inverters in the e-mobility sector.
The HybridPACK Drive G2 Fusion is the first plug’n’play power module that implements a combination of Infineon’s silicon and silicon carbide (SiC) technologies. This cutting-edge solution provides an ideal balance between performance and cost efficiency, giving more choice in the optimization of inverters.
One of the main differences between silicon and SiC in power modules is that SiC has a higher thermal conductivity, breakdown voltage and switching speed, making it more efficient, but also more expensive than silicon-based power modules. With the new module, the SiC content per vehicle can be reduced, while maintaining vehicle performance and efficiency at a lower system cost. For example, system suppliers can realize nearly the system efficiency of a full SiC solution with only 30 percent SiC and 70 percent silicon area.
“Our new HybridPACK Drive G2 Fusion module underlines Infineon’s innovation leadership in the automotive semiconductor industry,” said Negar Soufi-Amlashi, Senior Vice President & General Manager High Voltage at Infineon’s Automotive division. “Addressing the demand for greater e-mobility range, this technological breakthrough smartly combines silicon carbide and silicon. Integrated in a well-introduced module package footprint it offers compelling cost-performance ratio over pure silicon carbide modules without adding system complexity for automotive system suppliers and vehicle manufacturers.”
HybridPACK Drive G2 Fusion expands Infineon’s HybridPACK Drive power module portfolio and can be quickly and easily integrated in vehicle components or modules without requiring complex adjustments or configurations. The HybridPACK Drive G2 Fusion module features up to 220 kW in the 750 V class. It ensures high reliability over the entire temperature range from -40 °C to +175 °C and improved thermal conductivity.
The unique properties of Infineon’s CoolSiC™ technology and its silicon IGBT EDT3 technology with very fast turn-on enable the use of a single gate driver or dual gate drivers. This allows easy re-design from full silicon or full SiC based inverters to a fusion inverter. Generally, Infineon’s holistic expertise in SiC MOSFET and silicon IGBT technology, power module packaging, gate drivers as well as sensors enables premium products with cost savings at system level. One example is the integration of Swoboda or XENSIV™ Hall sensors in the HybridPACK Drive package for more precise and efficient motor control.
Infineon will showcase the new HybridPACK Drive G2 Fusion at electronica 2024 in Munich from November 12 to 15 (hall C3, booth 502).
Original – Infineon Technologies
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The U.S. Department of Commerce and Wolfspeed announced they have signed a non-binding preliminary memorandum of terms (PMT) for up to $750 million in proposed direct funding under the CHIPS and Science Act. In addition, a consortium of investment funds led by Apollo, The Baupost Group, Fidelity Management & Research Company and Capital Group have agreed to provide Wolfspeed an additional $750 million of new financing.
Together these investments support Wolfspeed’s long-term growth plans and bolster domestic production of silicon carbide to power clean energy systems underpinning electric vehicles (EVs), artificial intelligence (AI) data centers, battery storage and more. In addition, Wolfspeed expects to receive $1 billion of cash tax refunds from the advanced manufacturing tax credit under the CHIPS and Science Act (section 48D), giving the company, in total, access to up to $2.5 billion of expected capital to support the expansion of silicon carbide manufacturing in the United States.
Wolfspeed is the world’s largest producer of silicon carbide technology, pioneering the technology more than 35 years ago on the campus of North Carolina State University. Since that time, Wolfspeed has become the global leader in silicon carbide technology, one of the fastest growing components of the broader semiconductor industry.
- Silicon carbide is a superior alternative to silicon for high power applications – such as EV powertrains, e-mobility, renewable energy systems, battery energy storage systems, and AI and cryptocurrency data centers – that unlocks improved performance and lower system costs.
- Notably, the importance of bolstering the domestic production of silicon carbide has been recognized across multiple federal agencies; the Department of Energy denoted it as one of 17 “critical materials” with a high risk of supply disruption that are integral to clean energy technologies, while the Department of Commerce recognizes silicon carbide semiconductors as important to national security.
- As the U.S. and the world pursue more efficient and environmentally friendly solutions to meet the world’s ever-increasing need for high-voltage energy products, it is crucial that the U.S. continue to make strategic investments to cement its technological leadership position, while continuing to spur American innovation in critical technologies.
Wolfspeed CEO, Gregg Lowe, said, “To reach this milestone under the U.S. CHIPS and Science Act is an incredible achievement in Wolfspeed’s long-term growth strategy, and we believe today’s announcement is a testament to the market-leading quality of Wolfspeed products and significance of Wolfspeed to broader U.S. economic and national security interests. This support galvanizes our ability to expand domestic manufacturing, accelerate innovation in next-generation semiconductor technology, and meet the increasing global demand for silicon carbide. As a key player in the semiconductor industry, this proposed investment will enable us to solidify our leadership position with a first-of-its-kind 200mm silicon carbide manufacturing footprint in upstate New York and central North Carolina, while contributing to the resilience and competitiveness of the U.S. supply chain. It’s not just about growth for Wolfspeed—it’s about driving technological advancement that powers the future.
“Silicon carbide is already enabling superior energy efficiency across mission-critical industries of the future like electric vehicles, e-mobility, solar and wind energy, industrial power applications, and AI data centers. While EVs have been the driver of silicon carbide adoption thus far, we believe the use cases for our technology are expansive and will only continue to grow as more and more industries find themselves needing to solve for the same power loss, system size, and system cost challenges as automakers,” concluded Lowe.
“Artificial intelligence, electric vehicles, and clean energy are all technologies that will define the 21st century, and thanks to proposed investments in companies like Wolfspeed, the Biden-Harris Administration is taking a meaningful step towards reigniting U.S. manufacturing of the chips that underpin these important technologies,” said U.S. Secretary of Commerce Gina Raimondo. “Because of the Biden-Harris Administration’s CHIPS and Science Act, the United States is building and fortifying our semiconductor manufacturing capabilities to serve our economic and national security interests while creating jobs and economic opportunities for communities across the country.”
“Wolfspeed is leading the pack in bringing semiconductor manufacturing back to America. This major multibillion dollar investment powered by my CHIPS & Science Law will accelerate the ongoing expansion in the Mohawk Valley, helping speed up hiring of hundreds of new good-paying jobs that Wolfspeed is creating in the Mohawk Valley and providing long term work for the Marcy fab to succeed well into the future, further establishing Upstate NY as a global hub for chip manufacturing,” said Senator Chuck Schumer. “From electric vehicles to artificial intelligence, this critical technology relies on the silicon carbide chips that Wolfspeed will manufacture and perfect in the Mohawk Valley. Today’s massive investment will make America’s economy and our national security stronger as Wolfspeed helps us write the next chapter of America’s resurgence as the leader in the semiconductor industry, with the Mohawk Valley as the beating heart.”
“Wolfspeed is a homegrown semiconductor innovator and manufacturer creating great jobs in North Carolina, and it’s important they received this major grant under the CHIPS and Science Act,” said North Carolina Governor Roy Cooper. “Thanks to this landmark legislation from the Biden-Harris Administration and our great workforce, we will continue to see good paying jobs coming to North Carolina.”
“This $750 million federal investment is a testament to Wolfspeed’s unique leadership in silicon carbide semiconductor manufacturing, and I applaud Wolfspeed’s continued commitment to North Carolina,” said Senator Thom Tillis. “I was proud to vote for the CHIPS and Science Act to provide the funding for this investment in North Carolina and to support our economic and national security.”
“North Carolina continues to be a leader in cutting-edge manufacturing that is vital to our country’s national and economic security,” said Senator Ted Budd. “This new Wolfspeed site in Siler City will bring good-paying jobs to the area and is an important first step in making sure America has secure supply chains for critical semi-conductors.”
“We are pleased to expand our investment in Wolfspeed by providing additional capital in support of the company’s build out of its leading silicon carbide capabilities,” said Apollo Partner Joseph Jackson. “We believe Wolfspeed is at the forefront of a critical transformation in sustainable transportation and ensuring that the company has durable capital access to complete its expansion plans will help solidify its leadership in this space. Along with our lending consortium, which includes multiple funds that also own substantial equity stakes in the company, we believe this strategic investment will drive significant long-term value while advancing key tenets of the CHIPS and Science Act.”
These proposed funds, which are expected to be received upon milestone achievements in the coming years, would enable Wolfspeed to complete its multi-billion-dollar greenfield U.S. capacity expansion plan, which consists of the largest and most advanced 200mm silicon carbide footprint in the world. In addition to the proposed direct funding, Wolfspeed intends to benefit from the U.S. Treasury Department Investment Tax Credit of up to 25% of the qualified capital expenditures primarily related to its construction and installation of equipment at The John Palmour Manufacturing Center for Silicon Carbide in Siler City, NC and completion of the Mohawk Valley Fab M-Line West Expansion in Utica, NY.
This multi-billion-dollar investment will bolster Wolfspeed’s balance sheet and will help to fuel significant growth through cash generation and accelerate its long-term profitability goals.
Summary of the PMT
The PMT outlines key terms for a CHIPS incentive award, including the proposed amount and form of the award, and provides that the disbursement of funds will be conditioned upon the achievement of certain operational and construction milestones and other requirements.
The PMT includes an obligation for Wolfspeed to raise an aggregate of $750 million in debt financing over three tranches through the issuance of senior notes under an amended and restated indenture. Wolfspeed and its lenders, led by Apollo funds, have reached an agreement for this additional financing, including $250 million to be available within 10 business days, and have agreed to certain intercreditor terms with the CHIPS Program Office as described in the PMT.
Together, the PMT and the agreement with lenders also requires:
- Wolfspeed to undertake further actions with respect to its capital structure, including (a) restructuring or refinancing its outstanding 2026, 2028 and 2029 convertible notes at specified intervals prior to their respective maturity dates, (b) deferring a total of $120 million in cash interest payments due prior to June 30, 2025 under an unsecured customer refundable deposit agreement, and (c) raising up to $300 million of additional capital from non-debt sources over the next 12 months.
- In addition, Wolfspeed has agreed with its lenders to certain revisions in the terms of the senior notes, including revisions to the interest rate applicable to the senior notes, as described in the Form 8-K filed today with Securities and Exchange Commission (SEC).
The PMT provides that the award is subject to due diligence and the negotiation and signing of a definitive direct funding agreement with the Department of Commerce and the negotiation and signing of an intercreditor agreement between the Department of Commerce and the Company’s lenders, which may contain different or additional conditions not contained in the PMT. Additional terms of the PMT were not disclosed.
Original – Wolfspeed
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Cambridge GaN Devices (CGD) is exhibiting at the prestigious IEEE Energy Conversion Congress and Expo on Booth 319. Now in its 16th year, ECCE 2024 is sponsored by both the IEEE Industrial Application Society (IAS) and IEEE Power Electronics Society (PELS). The event continues to grow, both in attendance and content.
ECCE 2024 will feature two-page Late Break Research Briefs, Post-Journal paper presentations, and the standard technical papers. It will also offer special sessions on emerging technologies and industry-oriented topics, and of course, tutorials, which have become a staple element of the ECCE technical program.
Andrea Bricconi | Chief Marketing Officer, CGD
“It is important for CGD that we spread our message that GaN is the future of power electronics, in terms of energy efficiency, power density and smallest carbon footprint, and that our ICeGaN® GaN power ICs are the most rugged and easiest-to-use devices available. Therefore we are delighted to exhibit for the first time at ECCE.”
At the event, CGD will show a number of demos that employ ICeGaN, including:
- 3 kW PFC reference design
- QORVO motor drive evaluation kit developed in partnership with CGD and utilising ICeGaN
- Slim 100W adaptor
- Half-bridge, full-bridge as well as ICeGaN in parallel evaluation boards
- 300W PFC+LLC
- Single leg of a 3-phase automotive inverter demo board, developed in partnership with French public R&I institute, IFP Energies nouvelles (IFPEN)
- ICeGaN vs discrete GaN circuits comparison in half bridge (daughter cards) demo board
Original – Cambridge GaN Devices
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NOVOSENSE Microelectronics, a semiconductor company specializing in high-performance analog and mixed-signal chips, is set to present its latest innovations in automotive and industrial control technologies at electronica 2024, Munich.
Attendees to the show are invited to visit booth #450 in Hall B5 to explore NOVOSENSE’s state-of-the-art advancements in intelligent vehicles, electrification, industrial control, renewable energy, and power supply solutions.
NOVOSENSE’s CTO, Yun SHENG, stated,”As intelligent vehicles become increasingly prevalent in the automotive industry, there is a growing demand for innovative solutions that improve safety, efficiency, and the overall driving experience. In response to this dynamic market, NOVOSENSE is proud to present our latest advancements, including multi-channel half-bridge drivers, programmable stepper motor drivers, and compact temperature and humidity sensors specifically designed for the next generation of automotive applications.”
These products include:
- The 40V multi-channel half-bridge driver NSD830x supports multiple load types and has been engineered for HVAC and climate control.
- The programmable stepper motor driver NSD8381 features sophisticated capabilities for adaptive headlights and central thermal management systems, ensuring exceptional performance and reliability.
- The compact high-precision temperature and humidity sensor NSHT30 integrates a capacitive RH sensor, CMOS temperature sensor, and signal processor, supporting intelligent in-vehicle systems.
- The NSOPA9xxx series includes high-voltage operational amplifiers suitable for automotive and industrial applications, including OBC/DC-DC converters and traction inverters.
NOVOSENSE will also highlight a comprehensive selection of sensors and drivers designed for next-generation vehicles and industrial systems, emphasizing high-performance and compact designs.
- The NSI22C1x series of isolated comparators enhance the reliability of industrial motor drives by supporting overvoltage, overtemperature, and overcurrent protection.
- The NSIP605x series of transformer drivers provides cost-effective adaptability while ensuring superior EMI and ESD performance for streamlined system design.
- The NSI7258 solid state relays featuring a 1700 V withstand voltage, support high-voltage measurement and insulation monitoring across industrial and automotive applications.
- Compliant with AEC-Q1000 reliability requirements, the NSM2311 delivers a fully integrated high-isolation current sensing solution with low primary impedance and high continuous current capacity.
- Designed for high reliability in switching power supplies, the NSI6801 outperforms traditional optocoupler gate drivers, making it an ideal choice for photovoltaic inverters and motor drive systems.
Electronica will be held at the Messe München in Munich, Germany, from November 12-15, 2024. NOVOSENSE is in Hall B5, booth 450.
Original – NOVOSENSE Microelectronics
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For next-generation power electronics, BASF has developed a polyphthalamide (PPA) that is especially suited for manufacturing housings of IGBT (insulated-gate bipolar transistor) semiconductors. Ultramid® Advanced N3U41 G6 addresses the growing demand for high-performance, reliable electronic components for e.g., electric vehicles, high-speed trains, smart manufacturing and the generation of renewable energy.
Semikron Danfoss, a global technology leader in power electronics, now uses the BASF PPA as housing in its Semitrans 10 IGBT which can be installed in inverters of photovoltaic and wind energy systems. Due to its outstanding chemical resistance and dimensional stability, the Ultramid® Advanced N grade enhances the robustness, long-term performance and reliability of these IGBTs, thus meeting growing needs for energy saving, higher power density and increased efficiency. IGBTs enable efficient switching and control of electrical circuits in power electronics.
“IGBTs are a key element of modern electronics, particularly in the renewable energy sector,” explains Jörn Grossmann from research and predevelopment at Semikron Danfoss. “IGBTs must operate at higher temperatures while maintaining long-term stability and performance. The Semitrans 10 has set a new benchmark for performance and efficiency benefiting from the unique properties of BASF’s PPA. We chose this material because of its extraordinary electrical isolation even in harsh environments and because of its excellent robustness against short-term temperature peaks in the assembly process.” The combination of high-performance material and smart design allows for faster switching speeds, lower conduction losses, and improved thermal management, thus addressing key needs in power electronics.
In today’s IGBTs, BASF’s proven Ultradur® (PBT: polybutylene terephthalate) is widely used. The new PPA is designed to meet the stringent requirements of next-generation IGBTs for rapidly evolving power electronics. They demand materials that can withstand higher temperatures, provide sustained electrical insulation, and maintain dimensional stability under challenging environmental conditions like humidity, dust and dirt.
The laser-sensitive Ultramid® Advanced N3U41G6 with non-halogenated flame retardant combines high thermal stability with low water uptake and excellent electrical properties. It is characterized by a high CTI (Comparative Tracking Index) of 600 (acc. to IEC 60112): This supports miniaturization of IGBTs by lower creepage and better insulation than materials so far used for power switches. The UL-certified grade shows an excellent electrical RTI (Relative Temperature Index) value of 150°C.
“BASF’s PPA compound is globally available and ready for sampling”, says Jochen Seubert, senior application expert for power electronics at BASF. “Backed by our customer-focused technical support in part development, we expect this innovative material to significantly contribute to the advancement of power electronics, supporting the global transition to renewable energies.” For manufacturing of IGBTs, the BASF PPA is compatible with potting materials used to assemble the semi-conductors with metal pins and clamps after injection molding.
BASF’s polyphthalamide portfolio is based on the six polymers Ultramid® Advanced N (PA9T), Ultramid® Advanced T1000 (PA6T/6I), Ultramid® Advanced T2000 (PA6T/66), Ultramid® T KR (PA6T/6), Ultramid® T6000 (PA66/6T) and Ultramid® T7000 (PA/PPA). They open the door to the next generation of lightweight, high-performance plastic components in many different sectors including the automotive industry, electronics and electric devices, mechanical engineering and consumer goods.
The PPA portfolio is available globally and complemented by BASF’s Ultrasim® simulation tool and extensive experience in application development. It includes more than 50 compounded grades for injection molding and extrusion, products with or without flame retardants. The compounds are available in different colors, from colorless to laser-markable black, with short-glass, long-glass or mineral fiber reinforcement, and with various heat stabilizers.
Original – BASF
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Navitas Semiconductor announced GaNSlim™, a new generation of highly-integrated GaN power ICs that will further simplify and speed the development of small form factor, high-power-density applications by offering the highest level of integration and thermal performance.
GaNSlim enables the simplest, fastest, and smallest system design by integrating drive, control, and protection, with integrated EMI control and loss-less current sensing, all within a high thermal performance proprietary DPAK-4L package. Additionally, with an ultra-low startup current below 10 µA, GaNSlim devices are compatible with industry-standard SOT23-6 controllers and eliminate HV startup.
Integrated features such as loss-less current sensing eliminate external current sensing resistors and optimize system efficiency and reliability. Over-temperature protection ensures system robustness and auto sleep-mode increases light and no-load efficiency. Autonomous turn-on/off slew rate control maximizes efficiency and power density while reducing external component count, system cost and EMI.
GaNSlim features a patented, 4-pin, high-thermal-performance, low-profile, low-inductance, DPAK package. This package enables 7 °C lower temperature operation versus conventional alternatives, supporting high-power-density designs with ratings up to 500 W. Target applications include chargers for mobile devices and laptops, TV power supplies, lighting, etc.
“Our GaN focus is on integrated devices that enable high-efficiency, high-performance power conversion with the simplest designs and the shortest possible time-to-market,” says Reyn Zhan, Sr. Manager of Technical Marketing. “Our new GaNSlim portfolio – built on integration, ease-of-use, and low-cost manufacturing methods, – continues to grow the customer pipeline with over 50 new projects already identified. GaNSlim increases our GaN addressable market by enabling lower system costs compared to silicon designs for many applications, targeting applications under 500 W across mobile, consumer and home appliance.”
Devices in the NV614x GaNSlim family are rated at 700 V with RDS(ON) ratings from 120 mΩ to 330 mΩ and are available in versions optimized for both isolated and non-isolated topologies.
As with other Navitas GaN ICs, GaNSlim devices are supplied with an industry-leading twenty-year warranty, while demo boards for QR flyback, single-stage PFC, boost PFC plus QR flyback and TV power supply designs allow for rapid evaluation and selection of the optimum device for a given application.
Original – Navitas Semiconductor
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Infineon Technologies AG is intensifying its collaboration with suppliers to further reduce CO 2 emissions along the whole supply chain. Infineon hosted its first ever Supplier Sustainability Summit to further stimulate collaboration and incentivize and support suppliers to accelerate their decarbonization journeys. The virtual event brought together about 100 top semiconductor industry suppliers.
“In order to meet our ambitious targets, we need you, our suppliers,” said Elke Reichart, Member of the Board and Chief Digital and Sustainability Officer at Infineon, during her welcome message. “Infineon’s scope 3 emissions make up the lion’s share of our footprint, especially the materials we source from our suppliers. Therefore, we very much look forward to joining forces with you. Together, we can stimulate and implement decarbonization strategies even better.”
Collaboration with suppliers is a fundamental part of Infineon’s overall sustainability strategy. The company has already made significant progress on its way to reaching climate neutrality by 2030; since 2019 Infineon has halved its CO 2 emissions (scope 1 and 2) while doubling revenue at the same time. In December 2023, Infineon added a commitment to setting a science-based target that includes the supply chain (scope 3). The procurement team is actively working with over 100 suppliers, engaging them to define their own science-based targets and implement appropriate reduction measures.
The Supplier Sustainability Summit was an excellent opportunity for Infineon to share learnings from its own climate strategy and journey and to facilitate exchange of best practices among suppliers. For instance, experts from the Infineon electricity procurement team gave insights from their hands-on experience in achieving 100 percent renewable electricity by 2025; whereas two suppliers shared their expertise in effectively setting science-based targets. The topic was deepened in a panel discussion with Infineon leaders and an expert from the CDP (formerly the Carbon Disclosure Project) that offered further practical advice to attendees.
Infineon’s Green Award recognizes and honors suppliers who demonstrated outstanding environmental commitment and advancements throughout the past year. The “Best Performance Award” went to Applied Materials Inc. for its ambitious climate strategy, including a 1.5°C science-based target and the company’s innovative “Xchange” program. As part of the program Infineon is directly collaborating with Applied Materials to increase resource efficiency and reduce emissions. The program enables take-back and refurbishment of spare parts for complex semiconductor equipment, thereby building on the circular economy to create environmental and business benefits for both parties.
The “Best Improvement Award” winner is Sumco Corporation, that has made remarkable progress in environmental sustainability throughout the past year. The Japan-based company is the first silicon wafer supplier to make a public commitment to setting a science-based target. Following discussions at the top leadership level, Sumco acted at an impressive speed, accelerating existing carbon reduction targets and expanding renewable electricity sourcing.
In the category of companies with less than one billion euros revenue, the “Best Improvement Award” went to iwis SE & Co. KG. The Munich-based, family-owned company serves as a great example to many with its ambitious “Zero Carbon 2040 program” and science-based target commitment. Infineon recognizes the proactive approach towards improving the environmental impact of operations and supply chain and the integration of climate targets in the environmental management system at the sites.
“We would like to applaud the winners of our Green Awards: Applied Materials, Sumco and iwis for stepping up and taking responsibility for environmental sustainability and performance,” said Angelique van der Burg, Chief Procurement Officer at Infineon and host of the day. “We believe that this performance will motivate our whole supplier base to raise the bar higher and follow their example. Now let’s make the best practice a standard practice.”
Original – Infineon Technologies
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MCC Semi unveiled the latest selection of 5000W TVS diodes designed to provide superior protection against transient voltage spikes. Whether caused by lightning or other electrical disturbances, voltage surges can add up to costly damage and system failures without proper safeguards in place. That’s where our 5000W TVS solutions come in.
With a broad range of voltages — from 11V to 400V — and a compact yet powerful SMC package, these transient voltage suppressors (TVS) optimize space on the board without sacrificing performance.
Leveraging glass-passivated junction technology, these TVS diodes ensure the highest durability and reliability in demanding environments at operating junction temperatures of up to 175°C. They also boast IEC 61000-4-2 ESD ratings of 30kV for air and contact discharge for enhanced protection during electrostatic discharge events.
Rapid response times with capacitance typically less than 3,000 pF and impressive clamping capabilities assure sensitive electronic components are adequately protected, and a leakage current less than 2µA above 11V reduces power losses.
Available in unidirectional and bidirectional configurations, MCC’s 5000W TVS diodes meet diverse application needs while reducing maintenance costs and boosting overall reliability.
Features & Benefits:
- IEC 61000-4-2 ESD Protection: 30kV (Air) and 30kV (Contact) for solid electrostatic discharge protection.
- Maximum Operating Junction Temperature: Rated up to 175°C for reliable operation in high-temperature environments.
- Ultra-Fast Response Time: Capacitance typically less than 3000 pF from 0V to breakdown voltage minimum, ensuring immediate protection.
- Low Leakage Current: Typical ID less than 2µA from 11V to minimize power loss.
Original – Micro Commercial Components
