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ROHM has reached a basic agreement with Solar Frontier K.K. to acquire the assets of Solar Frontier’s former Kunitomi Plant, located in Japan. The acquisition is scheduled to take place in October 2023 and will belong to the ROHM Group’s main production bases.
The role of semiconductors, one of ROHM’s core business fields is becoming increasingly important to achieving a decarbonized society.
In particular, the automotive and industrial equipment markets are undergoing technological innovation such as electrification in order to reduce environmental impact and achieve carbon neutrality. With this, the demand is increasing – especially for power and analog semiconductors.
As further expansion of the semiconductor market is expected, the ROHM Group intends to expand its production capacity continuously, particularly for silicon carbide (SiC) power devices, and ensure a stable supply to ROHM’s customers.
Original – ROHM
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AdvanSiC has officially launched their project website. The objective of AdvanSiC is to develop, produce, test, and validate cost-effective HV SiC MOSFET semiconductors in MVDC grid applications, a full-scale wind converter, a full-scale solar inverter, and a solid-state circuit breaker for DC converter stations.
The aim is to minimize HV SiC device cost by advancing novel design structures and process optimization. Beyond this, we shall assure an immune and reliable environment to handle SiC fast transients, as well as optimize passives and cooling system to provide cost reduction not only at device level but also at system level.
The goal of AdvanSiC is to provide industrial leadership in key and emerging technologies to SMEs, start-ups, and industry from Europe to Europe, specifically in a technology that will be key to provide clean and affordable energy.
Original – AdvanSiC
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Transphorm, Inc. responded to the recent news regarding China export restrictions. Late Monday, July 3, 2023, China’s Ministry of Commerce stated that it will restrict the exports of materials related to two metals used in semiconductor manufacturing: gallium and germanium. Gallium nitride (GaN) wafer materials are listed as being affected by these regulations.
Transphorm manufactures high voltage GaN power semiconductors. Trimethylgallium (TMGa) is used to produce the GaN. The company confirmed that its primary TMGa suppliers are not based in China and that suppliers have confirmed to be well-positioned to meet forecasted demand. Transphorm is therefore securely positioned to continue manufacturing and supplying its GaN devices without interruption.
Transphorm also explained gallium is generally a byproduct resulting from refinement processes used to produce popular metals such as aluminum from bauxite ore. Aluminum is produced in numerous countries such as Australia, Brazil, India, Jamaica, and the United States among others.
Transphorm will continue to the monitor the situation as necessary but sees no direct impact on its current operations. Nor does the company see long-term sourcing issues.
Original – Transphorm
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STMicroelectronics’ first galvanically isolated gate driver for gallium-nitride (GaN) transistors, the STGAP2GS, trims dimensions and bill-of-materials costs in applications that demand superior wide-bandgap efficiency with robust safety and electrical protection.
The single-channel driver can be connected to a high-voltage rail up to 1200V, or 1700V with the STGAP2GSN narrow-body version, and provides gate-driving voltage up to 15V. Capable of sinking and sourcing up to 3A gate current to the connected GaN transistor, the driver ensures tightly controlled switching transitions up to high operating frequencies.
With minimal propagation delay across the isolation barrier, at just 45ns, the STGAP2GS ensures fast dynamic response. In addition, dV/dt transient immunity of ±100V/ns over the full temperature range guards against unwanted transistor gate change. The STGAP2GS is available with separate sink and source pins for easy tuning of the gate-driving operation and performance.
Saving the need for discrete components to provide optical isolation, the STGAP2GS driver eases the adoption of efficient and robust GaN technology in various consumer and industrial applications. These include power supplies in computer servers, factory-automation equipment, motor drivers, solar and wind power systems, home appliances, domestic fans, and wireless chargers.
In addition to integrating galvanic isolation, the driver also features built-in system protection including thermal shutdown and under-voltage lockout (UVLO) optimized for GaN technology, to ensure reliability and ruggedness.
Two demonstration boards, the EVSTGAP2GS and EVSTGAP2GSN, combine the standard STGAP2GS and narrow STGAP2GSN with ST’s SGT120R65AL 75mΩ, 650V enhancement-Mode GaN transistors to help users evaluate the drivers’ capabilities.
The STGAP2GS in SO-8 widebody package, and the STGAP2GSN SO-8 narrow version, are available now, priced from $1.42 for orders of 1000 pieces.
Please visit www.st.com/stgap2gs for more information.
Original – STMicroelectronics
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DISCO Corporation opened a new mid-process research center on July 1, 2023.
As the wafers on which circuits are built in the front-end process of semiconductor manufacturing have extremely high added-value, high yield is required in the processes that follow. Among these processes, in the grinding (wafer thinning) and dicing (wafer singulation through cutting) processes handled by DISCO, there is a risk that one processing failure may cause the entire wafer’s quality to deteriorate.
Therefore, caution and accuracy are required for operations such as processing and transfer in particular. In addition, if a large number of defects occur in the back-end process, most of the time, alternative wafers cannot immediately be supplied from the front-end process. As a result, this may have a significant impact on the entire supply chain and become a large issue in the lean manufacturing of the automotive industry.
Recognizing these issues, DISCO has newly positioned these processes that are conventionally in the back-end process of semiconductor manufacturing as part of the “mid-process,” and has been proceeding with R&D in this area.
DISCO has officially established the mid-process research center as a site to conduct R&D for the mid-process and perform demonstrations for customers. This center has permanent installations of the wafer transfer system RoofWay as well as the cluster system MUSUBI, and research is underway to reduce the equipment operator’s responsibilities and improve semiconductor wafer processing and transfer quality through automation of the production system.
As semiconductor use in automotive applications is increasing, stricter quality management is being required for semiconductors as well, as they are responsible for the user’s life. Therefore, through this center, DISCO will aim at realizing a production system that eliminates operator intervention as much as possible in order to reduce quality variation that arises from human involvement.
The mid-process research center is a facility that makes verification of unmmaned processes possible by connecting a series of processes with a fully automatic transfer robot. The processes include thinning using a grinder, singulation using dicing saws and laser saws, and pickup, inspection, and measurement of die.
The mid-process research center has been partially open since December 2021, and during the time until the official opening, DISCO has been improving the level of the system by incorporating the valuable opinions of some of the invited customers. Now, as some time has passed from when the category of COVID-19 was downgraded and reclassified as a level 5 infectious disease, DISCO felt that it was finally possible to proactively welcome visitors to the center, and thus decided to make an official announcement for the opening of the center.
Original – DISCO
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Nexperia launched its entry to the insulated gate bipolar transistor (IGBT) market with a range of 600 V devices, starting with the 30A NGW30T60M3DF. By adding IGBTs to its extensive portfolio, Nexperia is addressing the growing demand for efficient, high-voltage switching devices with a range of performance and cost requirements.
These enable higher power density in power conversion and motor drive applications, including industrial motor drives like servo motors ranging from 5 to 20 kW (20 kHz), robotics, elevators, operating grippers, in-line manufacturing, power inverters, uninterruptible power supply (UPS), photovoltaic (PV) strings, EV-charging, and induction heating and welding.
IGBT is a relatively mature technology. Nonetheless, the market for these devices is expected to grow in line with the increased adoption of solar panels and electric vehicle (EV) chargers. Nexperia’s 600 V IGBTs feature a robust, cost-effective carrier-stored trench-gate advanced field-stop (FS) construction, providing exceptionally low conduction and switching loss performance with high levels of ruggedness in operating temperatures up to 175°C. This improves the efficiency and reliability of power inverters, induction heaters, welding equipment and industrial applications like motor drives and servos, robotics, elevators, operating grippers, and in-line manufacturing.
Designers can choose between the medium speed (M3) and high speed (H3) series IGBTs. These IGBTs have been designed with very tight parameter distributions, allowing multiple devices to connect safely in parallel. In addition, lower thermal resistance than competing devices enables them to provide higher output power. These IGBTs are also fully rated as soft fast reverse-recovery diodes. This means they are suitable for rectifier and bi-directional circuit applications or to protect against overcurrent conditions.
“With the release of these IGBTs, Nexperia provides designers with a greater choice of power-switching devices for a broad range of power applications”, according to Dr. Ke Jiang, General Manager Business Group Insulated-Gate Bipolar Transistors & Modules at Nexperia. “IGBTs are the ideal complement to Nexperia’s existing range of CMOS and wide-bandgap switching devices, making Nexperia a one-stop-shop for power electronics designers.”
These IGBTs are available in a standard, lead-free, TO247-3L package and are HV-H3TRB qualified for outdoor applications. Nexperia plans to follow this release with a series of 1200 V IGBTs. To learn more about Nexperia’s IGBTs, visit: https://www.nexperia.com/igbts
Original – Nexperia
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Navitas Semiconductor has confirmed continued supply of leading-edge gallium nitride (GaN) power ICs. On July 3rd, 2023, China’s Ministry of Commerce announced it would put in place certain restrictions on the exporting of gallium and germanium, among other materials, starting in August. Navitas’ wafer technology is ‘GaN-on-Si’. The wafer subcontract manufacturer has verified that their production remains unaffected by the export restrictions, given multiple sources of gallium world-wide.
As a result, Navitas does not expect customer deliveries to be impacted or its business to be adversely affected by the export restrictions.
Significant sources of gallium are available worldwide, as it is a natural by-product in the production of other metals such as aluminum. Navitas does not use germanium in any product.
Original – Navitas Semiconductor
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Renesas Electronics Corporation and Wolfspeed, Inc. announced the execution of a wafer supply agreement and $2 billion (USD) deposit by Renesas to secure a 10 year supply commitment of silicon carbide bare and epitaxial wafers from Wolfspeed. The supply of high-quality silicon carbide wafers from Wolfspeed will pave the way for Renesas to scale production of silicon carbide power semiconductors starting in 2025. The signing ceremony of the agreement was held at Renesas’ headquarters in Tokyo between Hidetoshi Shibata, President and CEO of Renesas, and Gregg Lowe, President and CEO of Wolfspeed.
The decade-long supply agreement calls for Wolfspeed to provide Renesas with 150mm silicon carbide bare and epitaxial wafers scaling in CY2025, reinforcing the companies’ vision for an industry-wide transition from silicon to silicon carbide semiconductor power devices. The agreement also anticipates supplying Renesas with 200mm silicon carbide bare and epitaxial wafers after the recently announced John Palmour Manufacturing Center for Silicon Carbide (the “JP”) is fully operational.
The need for more efficient power semiconductors, which supply and manage electricity, is dramatically increasing throughout automotive and industrial applications, spurred by the growth of electric vehicles (EVs) and renewable energy. Renesas is moving quickly to address the growing demand for power semiconductors by expanding its in-house manufacturing capacity. The company recently announced the restart of its Kofu Factory to produce IGBTs, and establishment of a silicon carbide production line at its Takasaki Factory.
Compared to conventional silicon power semiconductors, silicon carbide devices enable higher energy efficiency, greater power density and a lower system cost. In an increasingly energy-conscious world, the adoption of silicon carbide is becoming ever more pervasive across multiple high-volume applications spanning EVs, renewable energy and storage, charging infrastructure, industrial power supplies, traction and variable speed drives.
“The wafer supply agreement with Wolfspeed will provide Renesas with a stable, long-term supply base of high-quality silicon carbide wafers. This empowers Renesas to scale our power semiconductor offerings to better serve customers’ vast array of applications,” said Hidetoshi Shibata, President and CEO of Renesas. “We are now poised to elevate ourselves as a key player in the accelerating silicon carbide market.”
“With the steepening demand for silicon carbide across the automotive, industrial and energy sectors, it’s critically important we have best-in-class power semiconductor customers like Renesas to help lead the global transition from silicon to silicon carbide,” said Gregg Lowe, President and CEO of Wolfspeed. “For more than 35 years, Wolfspeed has focused on producing silicon carbide wafers and high-quality power devices, and this relationship marks an important step in our mission to save the world energy.”
The Renesas $2 billion deposit will help support Wolfspeed’s ongoing capacity construction projects including the JP, the world’s largest silicon carbide materials factory in Chatham County, North Carolina. The state-of-the-art, multi-billion-dollar facility is targeted to generate a more than 10-fold increase from Wolfspeed’s current silicon carbide production capacity on its Durham, North Carolina campus. The facility will produce primarily 200mm silicon carbide wafers, which are 1.7x larger than 150mm wafers, translating into more chips per wafer and ultimately, lower device costs.
Original – Renesas Electronics
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Microchip Technology Incorporated announced a multi-year initiative to invest approximately $300 million in expanding its operations in India, one of the world’s fastest-growing semiconductor industry hubs.
“Microchip is making a significant strategic commitment to growing our operations in India, whose meteoric growth has established it as one of the top sources of business and technical resources in our sector,” said Ganesh Moorthy, President and CEO of Microchip. “Our investments here will enable us to both benefit from and contribute to the country’s increasingly important role in the global semiconductor industry.”
Microchip’s planned investments are focused on:
- Additional improvements to Microchip’s Bangalore and Chennai facilities and the new research and development center in Hyderabad that the company inaugurated in a ceremony today
- Expanding and enhancing its engineering labs
- Serving the technical and business support requirements of a large and growing set of customers in India
- Accelerating hiring as the company taps into India’s growing talent pool
- Sponsoring technical consortia and supporting academic institutions and programs
- Launching a variety of Corporate Social Responsibility (CSR) programs tailored to regional needs
Approximately 2,500 Microchip employees in India are integral to the company’s semiconductor design and development, sales and support, IT infrastructure and application engineering operations. They strengthen corporate initiatives, support 2,000 customers in the region and make valuable contributions across more than 25 business units that develop solutions for industrial, automotive, data center, aerospace and defense, communications and consumer industries.
“Microchip’s investments in India over nearly two and a half decades have augmented its headcount growth, resulting in building a center of excellence for engineering deliverables and solutions for Microchip’s global success,” said Krishna Moorthy, President and CEO of the India Electronics and Semiconductor Association (IESA). “We look forward to celebrating Microchip’s continued progress in India as it embarks on this impressive growth campaign.”
IESA and Counterpoint Research recently reported that India’s semiconductor market is expected to reach $64 billion USD by 2026, which is nearly triple its 2019 size of $22.7 billion USD. The Semiconductor Industry Association wrote in its February 2023 India Semiconductor Sector white paper that the country now accounts for 20 percent of the total global design workforce. Together, IESA and SIA announced in January 2023 their plans to jointly build on what India has already accomplished as a major hub for semiconductor research, chip design and equipment engineering, with the goal of unlocking even greater future potential.
Original – Microchip Technology
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The EPE ECCE Europe conference is one of the largest in the world, attracting around eight hundred experts from numerous countries every year. Aiming at exchanging experience among fellow professionals and academics, and bearing in mind the present and future role of power electronics in the big energy transition the world is looking forward to, the EPE ECCE Europe conference is the privileged place to achieve this goal. EPE’23 ECCE Europe in Aalborg will provide the opportunity to discuss hot topics through the lecture- and poster sessions, the exhibition, the industrial forums and the tutorials.
After a successful EPE ECCE Europe conference in 2007, the Power Electronics community will gather again in Aalborg, Denmark, from September 4 to 8, 2023, to exchange views on research progress and technological developments in the various topics described elsewhere in this website.
On Monday, September 4th, several tutorials will be organized, and some exciting technical visits are planned for Friday, September 8th.
The 25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 ECCE Europe (Energy Conversion Congress and Expo Europe) is co-sponsored by the EPE Association and the IEEE Power Electronics Society (PELS).
The conference will take place at the AKKC – The Aalborg Congress and Culture Center, in Aalborg, Denmark, and will highlight several Focus Topics:
- Tuesday 5 September:
Energy Islands
1. Renewable Energy Systems and Power-to-X
2. Energy Islands- Wednesday 6 September:
Energy Storage
3. Energy-storage Technologies
4. Electric Vehicles- Thursday 7 September:
Emerging Technologies in Power Electronics
5. Emerging Power Electronic Devices and Semiconductors
6. Reliability and Artificial Intelligence in Power ElectronicsOriginal – EPE’23 ECCE Europe
