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Henkel announced the addition of Loctite Ablestik ABP 8068TI to its growing portfolio of high thermal die attach adhesives. With 165 W/m-K thermal conductivity, the new pressure-less sintering die attach paste boasts the highest thermal capability in the company’s semiconductor packaging portfolio, meeting performance requirements for high-reliability automotive and industrial power discrete semiconductor devices.
“High voltage applications like those found in automotive ADAS systems, EVs, industrial motor controls, and high-efficiency power supplies require superior electrical and thermal performance,” says Henkel’s Global Market Segment Head for Semiconductor Packaging Materials, Ramachandran Trichur. “Currently, the only viable die attach alternative to Pb solder – which will soon be phased out and cannot meet certain thermal demands – is sintered silver (Ag). Henkel pioneered pressure-less sintering die attach, allowing the use of standard, low-stress processing, and we have now formulated our fourth and highest thermal conductivity material to date, which tackles the stringent thermal and electrical requirements of next-generation power packages.”
Henkel’s newest pressure-less sintering die attach formulation meets multiple metrics for power semiconductors like MOSFETs, which are increasingly incorporating silicon carbide (SiC) and gallium nitride (GaN) materials as alternatives to silicon (Si) for improved efficiency. Loctite Ablestik ABP 8068TI is compatible with traditional Si and newer wide-bandgap semiconductors, among other power discrete devices. The 165 W/m-K ultra-high thermal conductivity die attach adhesive has demonstrated excellent sintering properties with good adhesion on copper (Cu), pre-plated frames (PPF), silver (Ag), and gold (Au) lead frames, robust electrical conductivity and stable RDS(on) after 1,000 hours of thermal cycling, and MSL 3 reliability.
Recommended for dies measuring 3.0 mm x 3.0 mm or smaller, Loctite Ablestik ABP 8068TI fully cures at 175° C or above to form a rigid sintered Ag network in the bulk epoxy and at the interface. Because pressure-less sintering is a drop-in replacement for standard die attach, high pressure is not required to achieve this robust structure, eliminating stress on thin die. Workability of the material is also notable at three hours of void-free open time and 24 hours of stage time with no degradation in shear strength.
As Trichur concludes, the power device market will only accelerate in application uses and performance requirements, making high-capability, high thermal die attach solutions an operational necessity: “There is an increased demand for power devices across market sectors, including automotive, industrial power storage and conversion, and aerospace, to name a few. For power semiconductors, sintered die attach is the prevailing and most reliable solution to deliver the die attach strength, integrity, and thermal and electrical conductivity required. Loctite Ablestik ABP 8068TI provides all this in a formula that enables simple processing to protect thinner, more complex dies.”
Original – Henkel
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Infineon Technologies AG has broken ground for a new plant in Dresden together with political leaders from Brussels, Berlin and Saxony. EU Commission President Ursula von der Leyen, German Federal Chancellor Olaf Scholz, Saxony’s Prime Minister Michael Kretschmer and Dresden’s Mayor Dirk Hilbert symbolically launched construction work together with Infineon CEO Jochen Hanebeck. With an investment volume of five billion euros, the new plant is the largest single investment in Infineon’s history.
“With this groundbreaking, Infineon is launching an important contribution to the green and digital transformation of our society,” said Hanebeck. “Global semiconductor demand will grow strongly and persistently in view of the high demand for renewable energies, data centers and electromobility. Our new plant will serve our customers’ demands in the second half of the decade. Together, we are driving decarbonization and digitalization.”
“In times of increasing geopolitical risks, it is great news for Europe that Infineon is investing massively in semiconductor manufacturing in Dresden”, said von der Leyen. “We need more such projects in Europe as demand for microchips will continue to rise rapidly. The EU Commission and member states are mobilizing 43 billion euros over the next few years under the European Chips Act to create a stronger and more resilient Europe in the digital domain.”
“Chips are the basis of any essential transformation technology – from wind farm to charging station. We welcome Infineon’s continued investment in Germany and thus further strengthening our country as one of the world’s most important semiconductor locations,” Scholz emphasized on the occasion of the groundbreaking event. “Chips made in Dresden help secure jobs and make our industry – from midsize companies to large corporations – more resilient. Dresden is where the components are created, that are needed for upcoming investments in green technologies.”
“Infineon’s investment will strengthen Europe, Germany and Saxony as an economic location,” says Kretschmer. “The construction of the new plant will both secure and create high-value jobs in Dresden. At the same time the attractiveness of Silicon Saxony as a center of expertise for the global semiconductor industry is increasing. For years, the state of Saxony has been supporting this unique ecosystem by investing in science.”
In addition, the investment by Infineon strengthens the manufacturing basis for the semiconductors that drive decarbonization and digitalization. Analog/mixed-signal components are used in power supply systems, for example in energy-efficient charging systems, small automotive motor control units, in data centers and in applications for the Internet of Things (IoT). The interaction of power semiconductors and analog/mixed-signal components makes it possible to create particularly energy-efficient and intelligent system solutions.
Expansion of production capacities at the existing Dresden site will let Infineon complete the project quickly and will also generate considerable effects of scale. Manufacturing activities are planned to begin in fall 2026. The expansion will create approximately 1,000 highly qualified jobs. Preparatory measures are currently taking place at the site of the new plant; the start of shell construction is planned for fall 2023.
The plant will be equipped with the latest in environmental technologies and will be among the most environmentally friendly manufacturing facilities of its kind. Thanks to advanced digitalization and automation, Infineon is also setting new standards for manufacturing excellence in Dresden. The new plant will be closely linked with the Infineon Villach site as “One Virtual Fab”. This manufacturing complex for power electronics is based on highly efficient 300-millimeter technology and will increase efficiency levels, giving Infineon additional flexibility in order to supply its customers faster.
In February, the German Federal Ministry for Economic Affairs and Climate Action (BMWK) has approved an early project launch, meaning that construction can already begin before completion of the inspection of legal subsidy aspects by the European Commission. Subject to the European Commission’s state aid decision and the national grant procedure, the project is to be funded in accordance with the objectives of the European Chips Act. Infineon is seeking public funding of around one billion euros.
Original – Infineon Technologies
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Alpha and Omega Semiconductor Limited (AOS) announced the release of 600V αMOS7™ Super Junction MOSFETs Family. αMOS7™ is AOS’ next generation high voltage MOSFET, designed to meet the high efficiency and high-density needs of servers, workstations, telecom rectifiers, solar Inverters, EV charging, motor drives and industrial power applications.
Today’s Server power supply requires Titanium efficiency, which translates to more than 98.5% peak efficiency on both PFC and LLC stages. Active-Bridges and Bridgeless designs are easy-to-implement solutions; however, switching and driving losses, especially at light load, are still the main problems designers face. Existing technologies limited by large cell pitches and charges could hardly meet such requirements.
Next-gen SJ technologies with reduced charge but also enough robustness is in demand. Low Qrr and Trr for LLC and PSFB applications are also a must during transient and abnormal situations. AOS αMOS7™ High Voltage SJ MOSFET is the best answer for above needs.
For Solar applications, low ohmic SMD devices are becoming the new standards, aiming for reduced form factors through utilizing 3D mechanical and thermal designs. αMOS7™ provides a wide Rdson granularity and SMD package choices, such as DFN, TOLL, and Top-cooling variants.
For low Fsw applications such as Solid-State Relays or Active Bridges, FETs must meet specific SOA requirements to sustain surge and in-rush currents. αMOS7™ ensures low Rdson’s temperature coefficient and ruggedness for transient voltage and current overstresses.
The first product released – AOK050V60A7 is a 600V 50mOhm αMOS7 low ohmic device with the industry-standard TO-247 package tailored for today’s high-power AC/DC, DC/DC, and Solar Inverter stages. As the EU ERP Lot9 regulation pushes the efficiency of single PSUs to Titanium level, AOS αMOS7™ 600V low ohmic family provides an ideal solution for single, interleaved, dual boost, totem-pole, and Vienna PFCs, as well as other hard-switching topologies. The optimized capacitance of AOK050V60A7 will provide customers excellent switching performances, with fast turn-on/turn-off behaviors, while avoiding the risks of self-turn-on or shoot-through. The 50mohm device will be followed by our upcoming 32mohm, 40mohm, 65mohm, and 105mohm devices.
“The new charge balance structure makes it possible to further reduce the active area up to 50%, compared to αMOS5™, our existing solution. In general, αMOS7™ is an industry-leading high voltage SJ solution designed to address both efficiency driven and cost-driven markets,” said Richard Zhang, Senior Director of Product Line and Global Power Supply businesses at AOS.
Technical Highlights:
- Low Ohmic device with ultra-low switching losses
- Rugged Body Diode and FRD options (Reduced Qrr) available for more demanding use cases
- Rugged SOA and in-rush current capability for Solid-State Relay and Active Bridge applications
- Optimized for both High Power and Low Power SMPSes, Solar Inverters, and EV DC Charging applications
Original – Alpha and Omega Semiconductor
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Infineon Technologies AG launched a new automotive power module: The HybridPACK™ Drive G2. It builds on the well-established HybridPACK Drive G1 concept of an integrated B6 package, offering scalability within the same footprint and extending it to higher power and ease-of-use. The HybridPACK Drive G2 will be available with different current ratings, voltage levels (750V and 1200V) and Infineon’s next generation chip technologies EDT3 (Si IGBT) and CoolSiC™ G2 MOSFET.
With a power range of up to 300 kW within the 750 V and 1200 V classes, the HybridPACK Drive G2 provides high ease-of-use and new features, such as an integration option for next-generation phase current sensor and on-chip temperature sensing, which enable system cost improvements. The power module achieves higher performance and power density through improved assembly and interconnect technology. The adoption of new interconnect technology (chip sintering) and of new materials (new black plastic housing) enables higher temperature rating, resulting in higher performance and longer product life.
The first generation (G1) of HybridPACK Drive was introduced in 2017, using silicon EDT2 technology. It offers a power range of 100 kW to 180 kW in the 750 V class. In 2021, Infineon expanded its product family with the first generation of HybridPACK Drive Automotive CoolSiC MOSFETs, which allowed the inverter design to achieve higher power up to 250 kW within the 1200 V class, longer driving range, smaller battery size and optimized system size and cost. With a track record of nearly 3 million units sold in various global electric vehicle platforms, the HybridPACK Drive is now Infineon’s market-leading power module.
The lead products (FS1150R08, FS01MR08, FS02MR12) of the new HybridPACK Drive G2 are in production and will be available starting May 2023, with additional product variants to follow in 2023 and 2024. More information is available at www.infineon.com/hybridpackdrive.
Original – Infineon Technologies
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Bosch is expanding its semiconductor business with silicon carbide chips. The technology company plans to acquire assets of the U.S. chipmaker TSI Semiconductors, based in Roseville, California. With a workforce of 250, the company is a foundry for application-specific integrated circuits, or ASICs. Currently, it mainly develops and produces large volumes of chips on 200-millimeter silicon wafers for applications in the mobility, telecommunications, energy, and life sciences industries. Over the next years, Bosch intends to invest more than 1.5 billion USD in the Roseville site and convert the TSI Semiconductors manufacturing facilities to state-of-the-art processes. Starting in 2026, the first chips will be produced on 200-millimeter wafers based on the innovative material silicon carbide (SiC).
In this way, Bosch is systematically reinforcing its semiconductor business, and will have significantly extended its global portfolio of SiC chips by the end of 2030. Above all, the global boom and ramp-up of electromobility are resulting in huge demand for such special semiconductors. The full scope of the planned investment will be heavily dependent on federal funding opportunities available via the CHIPS and Science Act as well as economic development opportunities within the State of California. Bosch and TSI Semiconductors have reached an agreement to not to disclose any financial details of the transaction, which is subject to regulatory approval.
“With the acquisition of TSI Semiconductors, we are establishing manufacturing capacity for SiC chips in an important sales market while also increasing our semiconductor manufacturing, globally. The existing clean-room facilities and expert personnel in Roseville will allow us to manufacture SiC chips for electromobility on an even larger scale,” says Dr. Stefan Hartung, the chairman of the Bosch board of management. “The location in Roseville has existed since 1984. Over nearly 40 years, the U.S. company has built up vast expertise in semiconductor production. We will now be integrating this expertise into the Bosch semiconductor manufacturing network,” says Dr. Markus Heyn, member of the Bosch board of management and chairman of the Mobility Solutions business sector. “We are pleased to join a globally operating technology company with extensive semiconductor expertise. We are confident that our Roseville location will be a significant addition to Bosch’s SiC chipmaking operations,” says Oded Tal, CEO at TSI Semiconductors.
The new location in Roseville will reinforce Bosch’s international semiconductor manufacturing network. Starting in 2026, following a retooling phase, first SiC chips will be produced on 200-millimeter wafers in a facility offering roughly 10,000 square meters of clean-room space. At an early stage, Bosch invested in the development and production of SiC chips. Since 2021, it has been using its own proprietary, highly complex processes to mass-produce them at its Reutlingen location near Stuttgart. In the future, Reutlingen will also produce them on 200-millimeters wafers. By the end of 2025, the company will have extended its clean-room space in Reutlingen from roughly 35,000 to more than 44,000 square meters. “SiC chips are a key component for electrified mobility. By extending our semiconductor operations internationally, we are strengthening our local presence in an important electric vehicle market,” Heyn says.
Demand for chips for the automotive industry remains high. By 2025, Bosch expects to have an average of 25 of its chips integrated in every new vehicle. The market for SiC chips is also continuing to grow fast – by 30 percent a year on average. The main drivers of this growth are the global boom and ramp-up of electromobility. In electric vehicles, SiC chips enable greater range and more efficient recharging, as they use up to 50 percent less energy. Installed in these vehicles’ power electronics, they ensure that a vehicle can drive a significantly longer distance on one battery charge – on average, the possible range is 6 percent greater than with silicon-based chips.
Semiconductors are key to the success of all Bosch business areas. The company recognized the potential of this technology early on, and has been producing semiconductors for more than 60 years. Bosch is one of the few companies to have not only electronic and software expertise but also a profound understanding of microelectronics. It can combine this decisive competitive advantage with its strength in semiconductor manufacturing. The supplier of technology and services has been manufacturing semiconductors in Reutlingen since 1970. They are used both in the automotive sphere and in consumer electronics. Modern electronics in vehicles is also the basis for reducing traffic emissions, preventing road accidents, and efficient powertrains. Production at the Bosch wafer fab in Dresden (300-millimeter wafers) started in July 2021. At nearly one billion euros, the wafer fab is the biggest single investment in the company’s history.
In its wafer fabs in Reutlingen and Dresden, Bosch has invested more than 2.5 billion euros in total since 200-millimeter technology was introduced in 2010. On top of this, billions of euros have been invested in developing microelectronics. Independently of the investment now planned in the United States, the company announced in summer last year that it will be investing a further 3 billion euros in its semiconductor business in Europe, both as part of its investment planning and with the aid of the EU’s “Important Project of Common European Interest on Microelectronics and Communication Technologies” program.
Original – Bosch
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Infineon Technologies AG and Schweizer Electronic AG are collaborating on an innovative way to further increase the efficiency of chips based on silicon carbide (SiC). Both partners are developing a solution to embed Infineon’s 1200 V CoolSiC™ chips directly onto printed circuit boards (PCB). This will increase the range of electric vehicles and reduce the total system costs.
The two companies have already demonstrated the potential of this new approach: They were able to embed a 48 V MOSFET in the PCB. This resulted in a 35 percent increase in performance. SCHWEIZER contributes to this success with its innovative p²Pack® solution which enables power semiconductors to be embedded in PCBs.
“Our joint goal is to take automotive power electronics to the next level,” said Robert Hermann, Product Line Head Automotive High-Voltage Discretes and Chips, of Infineon. “The low-inductive environment of a PCB allows clean and fast switching. Combined with the leading performance of 1200 V CoolSiC™ devices, chip embedding enables highly integrated and efficient inverters that reduce overall system costs.”
“With Infineon’s 100 percent electrically tested standard cells (S-Cell), we can achieve high overall yields in the p² Pack manufacturing process,” said Thomas Gottwald, Vice President Technology at Schweizer Electronic AG. “The fast-switching characteristics of the CoolSiC chips are optimally supported by the low-inductance interconnection that can be achieved with the p² Pack. This leads to increased efficiency and improved reliability of power conversion units such as traction inverters, DC-DC converters, or on-board chargers.”
Original – Infineon Technologies
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onsemi, a leader in intelligent power and sensing technologies, and premium electric mobility brand ZEEKR announced a long-term supply agreement (LTSA) between the two companies. onsemi will provide its EliteSiC silicon carbide (SiC) power devices to increase the powertrain efficiency of ZEEKR’s smart electric vehicles (EVs), resulting in improved performance, faster charging speeds and extended driving range.
To support its expanding portfolio of high-performance EVs, ZEEKR will adopt onsemi EliteSiC MOSFET, 1200V, M3E with enhanced electrical and mechanical performance and reliability. These power devices deliver improved power and thermal efficiency, which reduces the size and weight of the traction inverter and enhances the range of the automaker’s EVs.
“With cutting-edge technologies such as advanced SiC, ZEEKR will be able to offer electric vehicles with improved performance and even lower carbon emissions,” said Andy An, CEO of ZEEKR Intelligent Technology. “As a brand committed to sustainability, ZEEKR will continue to explore different ways to accelerate the transition towards new energy vehicles.”
The new LTSA will enable both companies to build a stronger supply chain relationship to support ZEEKR’s growth over the next decade.
“A reliable supply chain is critical to business success and, after significant investments in our SiC end-to-end supply chain, onsemi can offer this strategic value to customers,” said Hassane El-Khoury, president and CEO, onsemi. “This agreement will help our continued ramp of SiC operations, enabling us to offer industry-leading power devices that help our customers deploy the most efficient and highest performing EVs on the market.”
ZEEKR is a premium electric mobility brand built to address the global demand for premium EVs. Utilizing Geely’s advanced Sustainable Experience Architecture (SEA), ZEEKR develops in-house battery technologies, battery management systems, electric motor technologies and electric vehicle supply chain support.
Original – onsemi
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Mitsubishi Electric Corporation announced that it will begin shipping samples of a new HV100 dual-type X-Series high-voltage insulated gate bipolar transistor (HVIGBT) module on May31, offering superior power, efficiency and reliability in inverter systems for large industrial equipment such as railways and electric power systems. The dual-type module, which achieves 4.5kV withstand voltage and 10.2kVrms dielectric strength, is rated at 450A, which is believed to be unmatched among 4.5kV silicon HVIGBT modules.
Power semiconductors are increasingly being utilized to efficiently convert electric power in order to lower the carbon footprint of global society, particularly in heavy industry, where these devices are used in power-conversion equipment such as inverters in railway traction systems and for DC power transmission. In response to the growing demand for devices offering high output, high efficiency and wide-ranging output capacity, Mitsubishi Electric released two versions (3.3kV/450A and 3.3kV/600A) of its HV100 dual-type X-Series high-dielectric-strength HVIGBT module in 2021. In the near future, the forthcoming HV100 dual-type X-Series module will contribute to even higher output, higher efficiency and improved system reliability for inverters used in large industrial equipment requiring high dielectric strength.
Original – Mitsubishi Electric
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Semiconductor Power Electronics Center (SPEC) designed, fabricated, and characterized an implantation-free 3 kV 4H-SiC Bipolar Junction Transistor (BJT). With a 40μm-wide Four-step Junction Termination Extension (JTE), an open base breakdown voltage (BVCEO) and an open emitter breakdown voltage (BVCBO) of more than 3000V are measured. The total width of the JTE is less than two times of the drift thickness (23μm), which can be considered as highly area efficient.
The designed BJT has a 1.2μm narrow base width with 1×1017cm-3 doping, where implantation-free Ohmic contact was achieved. The BJT exhibits an excellent on-resistance of 6.7mΩ·cm2 for small-size devices and an on-resistance of 39.7mΩ·cm2 for large-size devices. The measured current gain for devices with additional anneal process is 21.
Original – Semiconductor Power Electronics Center
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Semikron Danfoss and the Kyoto-based company ROHM Semiconductor have been collaborating for more than ten years with regards to the implementation of silicon carbide (SiC) inside power modules. Recently, Semikron Danfoss added ROHM’s new 1200V RGA IGBT to its low power module offering. In doing so, both companies show that they remain committed to serving worldwide motor drive customers’ needs.
The worldwide growth in electrification technologies has created unprecedented demand for power modules. Often, it is the chip supply that limits power module availability. Despite ongoing investments in production capacity by the chip manufacturers, the supply situation remains tight. It is against this backdrop that ROHM has introduced the new 1200V RGA IGBT, targeted as an alternative to the latest Generation 7 IGBT devices in industrial applications. ROHM is now expanding their bare die offering to Semikron Danfoss, positioning themselves as an advanced alternative to traditional chip suppliers.
“The RGA is a newly designed, light punch through, trench gate IGBT with Tj,max = 175°C. The conduction, switching, and thermal characteristics are optimized for new industrial drive applications in the low to medium power range. At the same time, the RGA is intended to remain compatible with existing IGBT solutions, enabling a multiple source approach. In addition, the RGA can also be used to improve transient overcurrent handling during overload conditions in motor drive applications,” says Kazuhide Ino, Member of the Board, Managing Executive Officer, CFO at ROHM.
Semikron Danfoss can offer the 1200V RGA IGBT in a full range of nominal current classes from 10A to 150A. This range, combined with the suitability of the RGA chip in motor drive applications, means that the MiniSKiiP family is the ideal choice for module implementation. The baseplate-less, spring-contact MiniSKiiP is already deeply embedded in the worldwide motor drive market and always equipped with the latest generation IGBTs. Therefore, it is important for this product to have an alternative IGBT source to diversify the supply chain. The uniform-height MiniSKiiP housing family is also offered on the market as a multiple source package, making an alternative IGBT a valuable option for manufacturers.
For press-fit/solder applications, the industry-standard SEMITOP E package will also be available in pin-compatible configurations to existing Generation 7 IGBT module offerings. This housing family will also offer sixpack (“GD”) and converter-inverter-brake (“DGDL”) circuit configurations.
“The power electronics industry continues to recover and learn lessons from the supply issues in recent years. It’s clear that diversification in semiconductor chip and module manufacturing is required to generate true ‘multiple source’ power modules”, says Claus A. Petersen, President, Semikron Danfoss. “In the case of 1200V Generation 7 IGBTs, a reliable equivalent from a reputable manufacturer is now available to address this issue also in the low power range. The 1200V RGA IGBT from ROHM is a perfect alternative to the Generation 7 IGBT and can be made to behave in a remarkably similar manner with small gate resistor adjustment,” continues Peter Sontheimer, Senior Vice President Industry Division & Managing Director at Semikron Danfoss.
Original – Semikron Danfoss
