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Vincotech has extended its fruitful cooperation with TSV Haching München into the upcoming season. The company has been a main sponsor and an active supporter of the club for two years now.
Vincotech’s backing for the local volleyball team echoes the company’s philosophy. Committed to nurturing its ties to the community and championing the spirit of partnership at work and at play, Vincotech company sees its values reflected in this sport and in the aspirations of TSV Haching München’s team of young international athletes.
Commenting on the company’s motives, Vincotech CEO Eckart Seitter, said, “Volleyball – much like Vincotech – is all about teamwork, agility and speed. Our policy of pursuing long-term partnerships in business pays off; our enduring relationship with TSV Haching München has also been rewarding. Now we’re delighted to see this journey continue. Rooting for the squad along with its passionate fans, we look forward to memorable moments on the court and another winning season in the German Bundesliga, the nation’s premiere league.”
As in previous years, there will be joint activities that will engage fans and bring both brands closer to the community. The team will appear in a new Vincotech video, showcasing their skills, teamwork, and dedication. The video shooting took place earlier in September and the collaboration will produce behind-the-scenes footage, motivational stories, and promotional videos that reflect the synergy between the team’s athletic spirit and Vincotech’s brand values. They will be shared across social media platforms, enhancing visibility and interaction between the volleyball team and the company’s audience. Vincotech will also elevate the in-game experience for spectators by sponsoring activities during the home game in December. These activities will include an interactive fan zone, halftime contests, and exclusive giveaways.
Known for vetting suppliers for success, Vincotech applies the same high standards when choosing partners. TSV Haching München’s commitment to excellence enables the club to compete at the highest professional level. Vincotech, a global company with deep local roots, has a winning record at home and abroad. More than merely a contractual extension, this renewed partnership attests to a shared vision of growth, community and success.
Vincotech is excited to continue this journey together and look forward to an exhilarating season ahead. We wish TSV Haching München great success on the court and are proud to be a part of their continued pursuit of excellence. Here’s to a season filled with thrilling victories, unforgettable moments, and a growing connection between our brands, the team, and the incredible fans.
Original – Vincotech
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Ideal Power Inc. announced an agreement with Sekorm Advanced Technology (Shenzhen) Co., Ltd. for the distribution of Ideal Power’s products throughout China.
“This is a significant development in the commercialization of our B-TRAN™ technology as we add Sekorm as a third distributor for our products. Sekorm stands out for their expertise in demand creation throughout China, strong technical sales capability and securing sales for new technologies. This leading demand-creation distributor addresses B-TRAN™ target industrial and automotive markets in China, the world’s largest market for power semiconductors. We look forward to collaborating with Sekorm to secure orders that may potentially lead to design wins and/or custom development agreements,” said Dan Brdar, President and Chief Executive Officer of Ideal Power.
Ideal Power has agreements with three distributors with demand generation expertise and comprehensive customer networks that expand our global reach: Richardson Electronics, Ltd. for global distribution of Ideal Power’s products; RYOSHO U.S.A, INC. (“RYOSHO”), a subsidiary of RYODEN CORPORATION (TSE: 8084), for the global distribution of Ideal Power’s products with particular strength in Japan; and Sekorm Advanced Technology (Shenzhen) Co., Ltd. for distribution of Ideal Power’s products throughout China.
Ideal Power utilizes an asset-light business model leveraging the large investment already made in silicon processing, distribution, demand creation and support infrastructure. This business model allows the Company to continue focusing on disruptive B-TRAN™ technology improvements and commercialization while driving working capital efficiency.
Original – Ideal Power
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Infineon Technologies AG expands its OptiMOS™ 6 MOSFET portfolio with the new 135 V and 150 V product families. The devices are designed to meet the requirements of drives and switched-mode power supply (SMPS) applications and complement the recently released launched OptiMOS 6 120 V MOSFETs.
With the extended portfolio, Infineon offers its customers a wide range of alternatives to select the best-fit MOSFETs for various applications. Lower switching losses benefit applications like server SMPS, solar optimizers, high-power USB chargers, and telecom. Improved conduction losses are highly beneficial for motor inverters in e-forklifts and light electric vehicles (LEVs).
Compared to the previous generation (OptiMOS 5 150 V MOSFETs), the new product families offer a reduction in on-state resistance R DS(on) of up to 50 percent, while the FOM g is reduced by 20%. With the very low R DS(on), their improved switching performance and excellent EMI behavior, both new families deliver unparalleled efficiency, power density, and reliability. A faster and softer body diode delivers an up to 59 percent lower Q rr, less overshoot and ringing.
The OptiMOS 6 135 V and 150 V MOSFETs are available in a variety of packages to provide customers with a range of options for best-fit products. This broad package portfolio includes TO-220, D 2PAK 3-pin, D 2PAK 7-pin, TOLL, TOLG, TOLT, SuperSO8 5×6 and PQFN 3.3×3.3.
The OptiMOS 6 135 V and 150 V MOSFETs can be ordered now. Further information is available at www.infineon.com/optimos-6-135v and www.infineon.com/optimos-6-150v.
Original – Infineon Technologies
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ROHM has released N-channel MOSFETs – RF9x120BKFRA / RQ3xxx0BxFRA / RD3x0xxBKHRB – featuring low ON-resistance ideal for a variety of automotive applications, including motors for doors and seat positioning, as well as LED headlights. Sales have begun with 10 models across 3 package types, with plans to expand the lineup in the future.
The automotive sector is seeing a surge in the number of electronic components, driven by the demand for enhanced safety and convenience. At the same time, there is a pressing need for improved power efficiency to optimize fuel and electricity consumption. Especially for MOSFETs essential for switching applications in automotive systems, there is a growing requirement for lower ON resistance to minimize loss and heat generation.
ROHM, which has been supplying low ON-resistance MOSFETs for consumer and industrial equipment, has now extended this technology to the automotive sector. Adapting cutting-edge medium voltage processes to meet the stringent reliability requirements of automotive products allowed us to develop 10 N-channel MOSFET models characterized by low ON resistance.
Offered in voltage ratings of 40V, 60V, and 100V, the new products incorporate a split-gate structure to achieve low ON-resistance, contributing to higher efficiency operation in automotive applications. All models are qualified under the AEC-Q101 automotive reliability standard, guaranteeing exceptional high reliability.
Users can select from among three package types, depending on the application. For space-constrained sets like Advanced Driver Assistance Systems (ADAS), the compact DFN2020Y7LSAA (2.0mm × 2.0mm) and HSMT8AG (3.3mm × 3.3mm) packages are ideal. For automotive power applications, the widely used TO-252 (DPAK) package (6.6mm × 10.0mm) is also available. In addition, ROHM has further enhanced mounting reliability by utilizing wettable flank technology for the DFN2020Y7LSAA package and gull-wing leads for the TO-252 package.
Going forward, ROHM plans to expand its lineup of medium-voltage N-channel MOSFETs to provide even greater miniaturization and higher efficiency in automotive applications. Mass production of the DFN3333 (3.3mm × 3.3mm) and HPLF5060 (5.0mm × 6.0mm) packages is scheduled for October 2024, followed by 80V products in 2025. P-channel products are also scheduled for future release.
Original – ROHM
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Tata Group, a global enterprise headquartered in India, and Analog Devices, Inc. announced a strategic alliance to explore potential cooperative manufacturing opportunities.
Tata Electronics, Tata Motors, and Tejas Networks signed a Memorandum of Understanding (MoU) with ADI to enhance strategic and business cooperation, explore opportunities for semiconductor manufacturing in India, and use ADI’s products in Tata applications like electric vehicles and network infrastructure. The companies also agree to have strategic roadmap alignment discussions.
The joint effort is expected to be mutually beneficial and is a significant step in establishing a robust electronics manufacturing ecosystem in India both for domestic and global consumption.
N Chandrasekaran, Chairman of Tata Sons, said, “The Tata Group is deeply committed to pioneering a thriving semiconductor industry in India. We are excited to partner with ADI across the semiconductor value chain and explore collaboration between ADI and Tata Group companies to design and offer advanced products to serve our customers.”
“At ADI, we are thrilled to join efforts with the Tata Group in advancing India’s semiconductor ecosystem. This joint effort aligns with our commitment to innovation and sustainable growth in the region. By combining our real-world semiconductor solutions and software expertise with Tata’s vision and capabilities, we can accelerate the development of cutting-edge technologies, from electric vehicles to next-generation network infrastructure. Together, we are not only building a stronger semiconductor ecosystem but also shaping the future of global electronics manufacturing,” said Vincent Roche, CEO and Chair at ADI.
As previously announced, Tata Electronics is investing in its own facilities by building India’s first fab in Dholera, Gujarat with a total investment of $11 billion. In addition, Tata Electronics will be investing another $3 billion in a greenfield facility in Jagiroad, Assam for the assembly and testing of semiconductor chips.
Tata Electronics and ADI intend to explore opportunities to manufacture ADI’s products in Tata Electronics’ fab in Gujarat and OSAT in Assam. Tata Motors and ADI intend to explore opportunities for engagement in electronics hardware components for energy storage solutions and power electronics in both commercial and passenger vehicle businesses. Tejas Networks and ADI intend to explore opportunities for engagement in electronics hardware components for network infrastructure.
Original – Analog Devices
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Together with 59 other leading Saxon companies, Siltronic AG is supporting the appeal “Companies for Saxony’s Future” for the resolute expansion of renewable energies. The aim of the initiative is to secure the competitiveness of Saxony’s economy and to strengthen the state as an attractive region for companies.
“We are a leading global manufacturer of hyperpure silicon wafers for the semiconductor industry and sustainability is deeply rooted in our corporate DNA. Our ambitious climate goals are one example: We aim to increase our use of renewable energy to 60 percent by 2030 and 100 percent by 2045, with the goal of achieving near-zero emissions. To achieve this, we need the necessary infrastructure and sufficient green electricity at competitive prices,” explained the Freiberg site manager of Siltronic AG, Dr. Christian Heedt, at a press conference on the publication of the appeal “Companies for Saxony’s Future – The Free State Needs the Energy Transition”.
With this paper, the companies are addressing the newly formed Saxon state government. In it, they refer to the need for a stable and sustainable energy supply through the expansion of renewable energies and the necessary infrastructure. “Consistent action today will sustainably and successfully position Saxony as a business region in international competition in the future,” continues Heedt.
The signatories of the joint appeal are also calling on the Saxon state government to strengthen political support for the energy transition and drive forward the expansion of the grid. There needs to be broad social acceptance for renewable energies. According to the paper, this is crucial to achieve the climate targets in Saxony and beyond and to ensure the competitiveness of Saxony as a business region.
The initiators include companies from numerous sectors, including steel, chemicals, pharmaceuticals, paper, semiconductors, energy services, municipal utilities, and automotive suppliers. In total, the companies account for more than 12,000 jobs. The Dresden and Chemnitz Chambers of Industry and Commerce are also supporting the appeal.
You can find further information at: www.unternehmen-zukunft-sachsen.de
Original – Siltronic
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Silicon Catalyst, an incubator + accelerator exclusively focused on accelerating semiconductor solutions, announced that TD Shepherd has joined as a new member of its In-Kind Partner ecosystem. This partnership aims to enhance the support available to semiconductor startups, driving innovation and growth.
Specializing in semiconductors, semiconductor equipment and materials, photonics, EDA, AI/ML, and embedded programming, with a global team of seasoned professionals, including engineers and senior bankers, TD Shepherd brings a unique blend of corporate finance expertise and hands-on experience to the Silicon Catalyst’s portfolio companies.
TD Shepherd has a rich network of Dutch, European, Asian, and US venture funds, PE parties, and corporate venture funds focused on the deep-tech sector, and is a member of global organizations like GSA and IEEE, with turn-key partnerships with Microtech Ventures, HighTech Startbahn, and corporate finance companies, ensuring quick access to relevant parties.
As an IKP member, TD Shepherd offers startup training services on key topics such as Due Diligence, Ambition & Compass, and Round Preparation. The intensive training sessions are designed to help deep-tech startups navigate complex financial landscapes and create sustainable growth models.
For more information, visit https://tdshepherd.com and https://siliconcatalyst.com
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Infineon Technologies AG announced that the company has succeeded in developing the world’s first 300 mm power gallium nitride (GaN) wafer technology. Infineon is the first company in the world to master this groundbreaking technology in an existing and scalable high-volume manufacturing environment. The breakthrough will help substantially drive the market for GaN-based power semiconductors.
Chip production on 300 mm wafers is technologically more advanced and significantly more efficient compared to 200 mm wafers, since the bigger wafer diameter fits 2.3 times as many chips per wafer.
GaN-based power semiconductors find fast adoption in industrial, automotive, and consumer, computing & communication applications, including power supplies for AI systems, solar inverters, chargers and adapters, and motor-control systems. State-of-the art GaN manufacturing processes lead to improved device performance resulting in benefits in end customers’ applications as it enables efficiency performance, smaller size, lighter weight, and lower overall cost. Furthermore, 300 mm manufacturing ensures superior customer supply stability through scalability.
“This remarkable success is the result of our innovative strength and the dedicated work of our global team to demonstrate our position as the innovation leader in GaN and power systems,” said Jochen Hanebeck, CEO of Infineon Technologies AG. “The technological breakthrough will be an industry game-changer and enable us to unlock the full potential of gallium nitride. Nearly one year after the acquisition of GaN Systems, we are demonstrating again that we are determined to be a leader in the fast-growing GaN market. As a leader in power systems, Infineon is mastering all three relevant materials: silicon, silicon carbide and gallium nitride.”
Infineon has succeeded in manufacturing 300 mm GaN wafers on an integrated pilot line in existing 300 mm silicon production in its power fab in Villach (Austria). The company is leveraging well-established competence in the existing production of 300 mm silicon and 200 mm GaN. Infineon will further scale GaN capacity aligned with market needs. 300 mm GaN manufacturing will put Infineon in a position to shape the growing GaN market which is estimated to reach several billion US-Dollars by the end of the decade.
This pioneering technological success underlines Infineon’s position as a global semiconductor leader in power systems and IoT. Infineon is implementing 300 mm GaN to strengthen existing and enabling new solutions and application fields with an increasingly cost-effective value proposition and the ability to address the full range of customer systems. Infineon will present the first 300 mm GaN wafers to the public at the electronica trade show in November 2024 in Munich.
A significant advantage of 300 mm GaN technology is that it can utilize existing 300 mm silicon manufacturing equipment, since gallium nitride and silicon are very similar in manufacturing processes. Infineon’s existing high-volume silicon 300 mm production lines are ideal to pilot reliable GaN technology, allowing accelerated implementation and efficient use of capital. Fully scaled 300 mm GaN production will contribute to GaN cost parity with silicon on R DS(on) level, which means cost parity for comparable Si and GaN products.
300 mm GaN is another milestone in Infineon’s strategic innovation leadership and supports Infineon’s mission of decarbonization and digitalization.
Original – Infineon Technologies
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Infineon Technologies AG has been nominated for the Deutscher Zukunftspreis 2024, the Federal President’s Award for Technology and Innovation, for its development of a new type of energy-saving chip based on the innovative semiconductor material silicon carbide (SiC). The Jury of Deutscher Zukunftspreis has announced the three nominated teams in Munich.
A team of developers from Infineon, together with Chemnitz University of Technology, has succeeded in developing the world’s first silicon carbide MOSFET with a vertical channel (trench MOSFET) and innovative copper contacting in the 3300V voltage class. The new SiC modules and the power converters equipped with the modules represent a revolutionary innovation leap in semiconductor technology from conventional silicon to more energy-efficient silicon carbide, which reduces switching losses in high-current applications by 90%.
MOSFETs are electrical switches for a wide range of applications. Trench MOSFETs differ from so-called planar MOSFETs in their cell structure and performance. While the current flow in planar MOSFETs is initially horizontal, trench MOSFETs offer purely vertical channels. This results in a higher cell density per surface area, which in turn significantly reduces the losses in the chip during energy conversion and therefore increases efficiency.
“The transition towards green energy and many other pressing challenges of our time can only be solved with technological progress,” said Jochen Hanebeck, CEO of Infineon Technologies AG. “It is therefore important to promote and reward innovation and make it visible in society. The ‘Deutscher Zukunftspreis’ is the most important national award that is presented with this aim in mind. The nomination is a great honor for us and proof of the successful research and development work at Infineon. Congratulations to all colleagues involved!”
The CoolSiC™ XHP™2 module family enables significant energy savings, for example in industrial power generation in solar parks or wind turbines, in power transmission and, above all, in end consumption, where high energies in the megawatt range are required. A single train with a silicon carbide drive system can save around 300 MWh per year compared to the previous silicon-based solution. This is roughly equivalent to the annual consumption of 100 single-family homes. Together with drive technology manufacturers and rail operators, Infineon is making an important contribution to decarbonization. At the same time, local residents also benefit from the lower noise level of trains with SiC modules when they pass through residential areas.
Through numerous innovative developments in chip processing and design as well as contacting and module technology, the team led by Dr. Konrad Schraml, Dr. Caspar Leendertz (both Infineon) and Prof. Dr. Thomas Basler (Chemnitz University of Technology) has brought the 3300V CoolSiC XHP2 high-performance module to production readiness. With ten times greater reliability against thermomechanical stress and a significantly higher power density compared to silicon modules, the new silicon carbide module can also be used to electrify large drives in diesel locomotives, agricultural and construction machinery, aircraft and ships, which were previously reserved for fossil fuels. The significantly higher switching frequencies permitted by the new module are helpful, as they enable a significant reduction in weight and volume of the power converters in the application.
“This nomination shows that climate change and sustainable resource consumption have become central aspects of our society,” said Dr. Peter Wawer, Division President Green Industrial Power (GIP) at Infineon. “Innovative energy solutions and power semiconductors are a core component in decarbonization and fighting climate change, as the expert jury of Deutscher Zukunftspreis has recognized. I am proud that we at Infineon can make a significant contribution to a green future with pioneering technology.”
Project manager Dr. Konrad Schraml: “For us as a development team, it is a matter close to our hearts to develop innovative chips that contribute to efficient energy consumption and thus also to green mobility on our planet. This nomination is a great recognition for my team, whose tireless efforts, expertise and passion for sustainability have made the technology breakthrough in silicon carbide possible.”
On November 27, Federal President Frank-Walter Steinmeier presents the Deutscher Zukunftspreis to the winning team in Berlin.
Original – Infineon Technologies
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JEDEC Solid State Technology Association announced the publication of JEP200: Test Methods for Switching Energy Loss Associated with Output Capacitance Hysteresis in Semiconductor Power Devices. Developed jointly by JEDEC’s JC-70.1 Gallium Nitride and JC-70.2 Silicon Carbide Subcommittees, JEP200 is available for free download from the JEDEC website.
Proliferation of soft switching power conversion topologies brought about the need to accurately quantify the energy stored in a power device’s output capacitance because the energy impacts efficiency of power converters. JEP200, developed in collaboration with academia, addresses the critical power supply industry need to properly test and measure the switching energy loss due to the output capacitance hysteresis in semiconductor power devices and details tests circuits, measurement methods, and data extraction algorithms. The document applies not only to wide bandgap power semiconductors such as GaN and SiC, but also silicon power transistors and diodes.
“Professionals in high-frequency power conversion systems have long sought a standardized approach to testing new switching energy losses,” said Dr. Jaume Roig, Member of Technical Staff, onsemi and Vice Chair of the JC-70 Committee. “This document now provides helpful guidance on testing energy losses related to output capacitance hysteresis caused by displacement currents. With this clarity, system optimization can proceed more accurately.”
“JEDEC’s JC-70 committee has the expertise necessary to meet the demands of the entire power semiconductor industry, and the development of JEP200 demonstrates how the JEDEC process enabled the committee to swiftly respond to an industry need,” said John Kelly, JEDEC President. “JEP200 encompasses GaN, SiC, and Si power devices, helping the industry navigate design challenges caused by the growing number of new power conversion topologies.”
Original – JEDEC
