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Infineon Technologies AG, the global leader in automotive semiconductors, and Hon Hai Technology Group (“Foxconn”), the world’s largest electronics manufacturing services provider, aim to establish a long-term partnership in the field of electric vehicles (EV) to jointly develop advanced electromobility with efficient and intelligent features. The Memorandum of Understanding (MoU) focuses on silicon carbide (SiC) development, leveraging Infineon’s automotive SiC innovations and Foxconn’s know-how in automotive systems.
“The automotive industry is evolving. With the rapid growth of the EV market and the associated need for more range and performance, the development of electromobility must continue to advance and innovate,” said Peter Schiefer, President of the Infineon Automotive Division. “Infineon’s commitment and passion for innovation and zero-defect quality has made us the best partner for our customers. We look forward to writing a new chapter in electromobility together with Foxconn.”
“We are pleased to be working with Infineon and are confident that this collaboration will result in optimized architecture, product performance, cost competitiveness and high system integration to provide customers with the most competitive automotive solutions,” said Jun Seki, Foxconn’s Chief Strategy Officer for EVs.
According to the MoU, the two companies will collaborate on the implementation of SiC technology in automotive high-power applications like traction inverters, onboard chargers, and DC-DC converters. Both parties intend to jointly develop EV solutions with outstanding performance and efficiency based on Infineon’s automotive system understanding, technical support and SiC product offerings combined with Foxconn’s electronics design and manufacturing expertise and the capability of system-level integration.
In addition, the two companies plan to establish a system application center in Taiwan to further expand the scope of their cooperation. This center will focus on optimizing vehicle applications, including smart cabin applications, advanced driver assistance systems and autonomous driving applications. It will also address electromobility applications such as battery management systems and traction inverters. The collaboration covers a wide range of Infineon’s automotive products, including sensors, microcontrollers, power semiconductors, high-performance memories for specific applications, human machine interface and security solutions. The system application center is expected to be established within 2023.
Original – Infineon Technologies
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onsemi, a leader in intelligent power and sensing technologies, announced the release of the latest generation of 1200 V EliteSiC silicon carbide (SiC) M3S devices, which enable power electronics designers to achieve best-in-class efficiency and lower system cost. The new portfolio includes EliteSiC MOSFETs and modules that facilitate higher switching speeds to support the growing number of 800 V electric vehicle (EV) on-board charger (OBC) and energy infrastructure applications, such as EV charging, solar and energy storage systems.
Also, part of the portfolio, are new EliteSiC M3S devices in half-bridge power integrated modules (PIMs) with industry leading lowest Rds(on) in a standard F2 package. Targeting industrial applications, the modules are ideally suited for DC-AC, AC-DC and DC-DC high power conversion stages. They provide higher levels of integration with optimized direct bonded copper designs to enable balanced current sharing and thermal distribution between parallel switches. The PIMs are designed to deliver high power density in energy infrastructure, EV DC fast charging and uninterruptible power supplies (UPS).
“onsemi’s latest generation of automotive and industrial EliteSiC M3S products will allow designers to reduce their application footprint and system cooling requirements,” said Asif Jakwani, senior vice president and general manager of the Advanced Power Division, onsemi. “This helps designers to develop high power converters with higher levels of efficiency and increased power densities.”
The automotive-qualified 1200 V EliteSiC MOSFETs are tailored for high-power OBCs up to 22 kW and high voltage to low voltage DC-DC converters. M3S technology has been developed specifically for high-speed switching applications and has the best-in-class figure of merits for switching losses.
Original – onsemi
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LATEST NEWS / PRODUCT & TECHNOLOGY / SiC / TOP STORIES / WBGNavitas Launches into High-Power Markets with GeneSiC SiCPAK™ Modules and Accelerates Bare-Die Sales
May 8, 2023
2 Min ReadNavitas Semiconductor, the only pure-play, next-generation power semiconductor company, announced their expanded portfolio into higher power markets with their leading-edge silicon carbide (SiC) power products in SiCPAK™ modules and bare die.
Target applications cover centralized and string solar inverters, energy storage systems (ESS), industrial motion, electric vehicle (EV) on-board chargers, EV roadside fast chargers, wind energy, UPS, bi-directional microgrids, DC-DC converters, and solid-state circuit breakers.
Ranging from 650 V to 6,500 V, Navitas has the widest range of SiC technology. From an original line-up of discrete packages – from 8×8 mm surface-mount QFNs to through-hole TO-247s – the GeneSiC SiCPAK is an initial, direct entry point into higher-power applications. A comprehensive power-module roadmap, with high-voltage SiC MOSFETs and MPS diodes, GaN power ICs, high-speed digital isolators and low-voltage silicon control ICs is being mapped out.
Dr. Ranbir Singh, Navitas EVP for SiC noted, “With a complete portfolio of leading-edge power, control and isolation technology, Navitas will enable customers to accelerate the transition from fossil fuels, and legacy silicon power products to new, renewable energy sources and next-generation semiconductors, with more powerful, more efficient, faster-charging systems.”
SiCPAK™ modules employ ‘press-fit’ technology to offer compact form factors for power circuits and deliver cost-effective, power-dense solutions to end users. The modules are built upon GeneSiC die that have already made a mark in terms of superior performance, reliability, and ruggedness. Examples include a SiCPAK half-bridge module, rated at 6 mOhm, 1,200 V with industry-leading trench-assisted planar-gate SiC MOSFET technology. Multiple configurations of SiC MOSFETs and MPS diodes will be available to create application-specific modules for superior system performance. The initial release will include 1,200 V-rated half-bridge modules in 6, 12, 20, and 30mOhm ratings.
Within the lead-free SiCPAK, each SiC chip is silver (Ag) sintered to the module’s substrate for superior cooling and reliability. The substrate itself is ‘direct-bonded copper’ (DBC) and manufactured using an active-metal brazing (AMB) technique on silicon-nitride (Si3N4) ceramics, ideal for power-cycling applications. This construction delivers excellent strength and flexibility, fracture resistance, and good thermal conductivity for cool, reliable, long-life operation.
For customers who prefer to make their own high-power modules, all GeneSiC MOSFET and MPS diodes are available in bare die format, with gold (Au) and aluminum (Al) top-side metalizations.
Original – Navitas Semiconductor
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Transphorm, Inc. announced availability of its 1200 V FET simulation model and preliminary datasheet. The TP120H070WS FET is the only 1200 V GaN-on-Sapphire power semiconductor introduced to date, making its model the first of its kind. Its release indicates Transphorm’s ability to support future automotive power systems as well as three-phase power systems typically used in the broad industrial, datacom, and renewables markets. These applications will benefit from the 1200 V GaN device’s higher power density and reliability along with equal or better performance at more reasonable cost points versus alternative technologies.
Transphorm recently validated the GaN device’s higher performance ability in a 5 kW 900 V buck converter switching at 100 kHz. The 1200 V GaN device achieved 98.7% efficiency, exceeding that of a similarly rated production SiC MOSFET.
The innovative 1200 V technology also underscores Transphorm’s leadership in GaN power conversion. Vertical integration, epitaxy ownership, and patented process paired with decades of engineering expertise enable the company to bring to market the highest performing GaN device portfolio with four additional major differentiators: Manufacturability, Drivability, Designability, and Reliability.
Transphorm’s 1200 V technology is anchored in proven process and mature technology, satisfying customer confidence requirements. The GaN-on-Sapphire process is in volume production today in the LED market. Additionally, the 1200 V technology leverages the fundamentally superior, normally-off GaN platform used in Transphorm’s current device portfolio.
Key TP120H070WS device specifications include:
- 70 mΩ RDS(on)
- Normally off
- Efficient bidirectional current flow
- ± 20 Vmax gate robustness
- Low 4Vth gate drive noise immunity
- Zero QRR
- 3-lead TO-247 package
The Verilog-A device model is recommended for use with the SIMetrix Pro v8.5 Circuit Simulator. A LTSpice model is in development and will be released in Q4 2023. Simulation modeling allows for fast and efficient power system design validation while reducing design iterations, development time, and hardware investments.
The device model files and datasheet are available for download here: https://www.transphormusa.com/en/products/#models
1200 V FET samples are expected to be available by Q1 2024.
Original – Transphorm
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As part of their strategic partnership announced earlier this year, ZF Friedrichshafen AG, a leading global technology company of next generation mobility, and Wolfspeed Inc, the global leader in Silicon Carbide technology, announced their plans to establish a joint European R&D center for Silicon Carbide power electronics in the Nuremberg Metropolitan Region.
The new joint research facility is supported by the German federal government and the regional government of Bavaria. Like the planned Wolfspeed Silicon Carbide chip factory in Ensdorf, Saarland, funding for the new center is subject to approval by the European Commission under the EU’s Important Project of Common European Interest (IPCEI) scheme, as well as antitrust authorities. The aim is to develop the two facilities to become the cornerstone of a new European Silicon Carbide technology network.
Construction will begin after IPCEI funding approval has been secured for both projects, which is expected later this year. The goal of the collaboration is to develop breakthrough innovations for Silicon Carbide systems, products, and applications, covering the full value chain from module to complete systems and thus reducing time-to-market significantly. The joint research center will target requirements in all mobility segments including consumer, commercial, agricultural, and industrial vehicles, as well as in the industrial and renewable energy markets. The collaboration aims to drive improvements such as higher efficiency, increased power density and higher performance of electrification solutions. Wolfspeed’s Silicon Carbide expertise and ZF’s access to all mobility segments allows for a fast and seamless transition of new technologies.
ZF and Wolfspeed are partnering with other leading organizations from the scientific and industrial communities to establish a comprehensive European Silicon Carbide technology network. To this end, ZF will use its membership in the European Center of Power Electronics (ECPE) and share key research results at the European level. Over time, the research center is planned to develop into an electronics and semiconductor campus.
“The research center is of outstanding importance for the energy and mobility transition in the EU and supports the strategic goals of Europe,” says Dr Holger Klein, CEO of ZF. “In addition, optimizing Silicon Carbide technology advances industrial transformation and strengthens the independence of European supply chains.”
“This research facility further strengthens our partnership with ZF and underlines our long-term commitment to turn our unique know-how from more than 35 years of experience in Silicon Carbide power electronics into state-of-the-art solutions for our industry partners,” comments Gregg Lowe, CEO of Wolfspeed Inc.
The strategic partnership links ZF, one of the world’s leading suppliers of electric drives, with Wolfspeed, the world’s most recognized specialist in Silicon Carbide technology. “This connection is unique and will lead to enormous advances in Silicon Carbide-based electrical systems and electric drives,” says ZF Board of Management member Stephan von Schuckmann. “This is made possible by the close networking of the research center and production, because fundamentally redesigned Silicon Carbide chips also require new production processes.”
Original – Wolfspeed
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Infineon Technologies AG is diversifying its silicon carbide (SiC) supplier base and has signed a long-term agreement with Chinese SiC supplier TanKeBlue to secure additional competitive SiC sources. TanKeBlue will supply the Germany-based semiconductor manufacturer with competitive and high-quality 150-millimeter SiC wafers and boules for the manufacturing of SiC semiconductors, covering a double-digit share of the forecasted demand in the long term.
The agreement between Infineon and TanKeBlue contributes to general supply chain stability, also with regard to the growing demand for SiC semiconductor products for automotive, solar and EV charging applications and energy storage systems in the Chinese market. It will also support the rapid growth of the emerging semiconductor material SiC. The agreement will focus on 150-millimeter SiC material in the first phase, but TanKeBlue will also provide 200-millimeter SiC material to support Infineon’s transition to 200-millimeter wafer diameter.
“Infineon is significantly expanding its manufacturing capacities at its production sites in Malaysia and Austria to meet the growing demand for SiC. In order to offer the most comprehensive product range possible to our customers, Infineon is currently doubling down on its investments in SiC technology and product portfolio. In this context, we are implementing a multi-supplier and multi-country sourcing strategy to increase resilience to the benefit of our broad customer base,” said Angelique van der Burg, Chief Procurement Officer at Infineon. “TanKeBlue provides excellent material performance and we are pleased to sign a competitive agreement with them.”
“We welcome the opportunity to team up with our customer Infineon, a global leader in power semiconductors. TanKeBlue plans to continuously improve its SiC material and develop its next generation of 200-millimeter wafer technology. We value Infineon as an excellent customer in this regard,” said Yang Jian, CEO of TanKeBlue.
Infineon is currently expanding its SiC manufacturing capacity in order to achieve its target of a 30 percent global market share by the end of the decade. Infineon’s SiC manufacturing capacity will increase tenfold by 2027. A new plant in Kulim, Malaysia is scheduled to start production in 2024, adding to Infineon’s manufacturing capacities in Villach, Austria. Today, Infineon already provides SiC semiconductors to more than 3,600 automotive and industrial customers worldwide.
Original – Infineon Technologies
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Magnachip Semiconductor Corporation (“Magnachip” or “Company”) announced that the Company has released a new family of 600V Super Junction Metal Oxide Semiconductor Field Effect Transistors (SJ MOSFETs) consisting of nine distinct products featuring proprietary design technology.
Magnachip’s proprietary design provides specific on-resistance (RSP) reduction of about 10%, and this result was achieved while maintaining the same cell-pitches of previous generation MOSFETs.
In addition, the new product family of 600V SJ MOSFETs is equipped with a fast recovery body diode. This diode technology significantly enhances system efficiency with reduced reverse recovery time (trr) and switching loss. Therefore, the figure of merit to evaluate general performance of MOSFETs was improved by more than 10% compared to the previous generation. As such, these 600V SJ MOSFETs can be used widely in industrial applications, such as solar inverters, energy storage systems, uninterruptible power supply systems, and a variety of electronics.
Among these new MOSFETs, the MMQ60R044RFTH product offers an exceptionally low RDS(on) of 44mΩ, making it an optimal choice for electric vehicle chargers and servers. Omdia, a global market research firm, estimates that the compound annual growth rates of Si MOSFET markets for hybrid & electric vehicles and servers will be 11% and 7%, respectively, from 2023 to 2026.
“Now that we have introduced these 600V SJ MOSFET products, we are aiming to unveil new 650V and 700V SJ MOSFET products with fast recovery body diode in the second half of 2023,” said YJ Kim, CEO of Magnachip. “These new MOSFETs represent a notable achievement for the Company, and we will build upon this success to deliver next-generation power solutions for rapidly changing market requirements and customer expectations.”
Original – Magnachip Semiconductor
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Infineon Technologies AG has signed an agreement with Chinese silicon carbide (SiC) supplier SICC to diversify Infineon’s SiC material supplier base and to secure additional competitive SiC sources. Under the agreement, SICC will supply the Germany-based semiconductor manufacturer with competitive and high-quality 150-millimeter wafers and boules for the manufacturing of SiC semiconductors, covering a double-digit share of the forecasted demand in the long term.
The agreement will focus in the first phase on 150-millimeter SiC material, but SICC SiC material supply will also support Infineon’s transition to 200-millimeter wafer diameter. This will generally contribute to supply chain stability, in particular with regard to the growing demand for SiC semiconductor products for automotive, solar and EV charging applications as well as energy storage systems in the Chinese market, and will generally support the rapid growth of the emerging semiconductor material SiC.
“Infineon is significantly expanding its manufacturing capacities at its production sites in Malaysia and Austria in order to serve the growing SiC demand. In this context, we are implementing a multi-supplier and multi-country sourcing strategy to increase resilience for the benefit of our broad customer base and are securing new competitive top-quality sources globally, matching the highest standards in the market,” said Angelique van der Burg, Chief Procurement Officer at Infineon.
“SICC’s substrates are widely used in the Power SiC field. We are pleased to team up with Infineon as our customer, a global leader in power semiconductors. SICC will continuously expand capacity to add more value for its global customers. We value Infineon as an excellent leading strategic customer and we look forward to jointly enhancing SiC industry development and promoting global digitalization, low-carbonization, and sustainable development,” said Zong Yanmin, CEO of SICC.
Infineon is currently expanding its SiC manufacturing capacity in order to achieve its target of a 30 percent global market share by the end of the decade. Infineon’s SiC manufacturing capacity will increase tenfold by 2027. A new plant in Kulim, Malaysia is scheduled to start production in 2024, adding to Infineon’s manufacturing capacities in Villach, Austria. Today, Infineon already provides SiC semiconductors to more than 3,600 automotive and industrial customers worldwide.
Original – Infineon Technologies
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Henkel announced the addition of Loctite Ablestik ABP 8068TI to its growing portfolio of high thermal die attach adhesives. With 165 W/m-K thermal conductivity, the new pressure-less sintering die attach paste boasts the highest thermal capability in the company’s semiconductor packaging portfolio, meeting performance requirements for high-reliability automotive and industrial power discrete semiconductor devices.
“High voltage applications like those found in automotive ADAS systems, EVs, industrial motor controls, and high-efficiency power supplies require superior electrical and thermal performance,” says Henkel’s Global Market Segment Head for Semiconductor Packaging Materials, Ramachandran Trichur. “Currently, the only viable die attach alternative to Pb solder – which will soon be phased out and cannot meet certain thermal demands – is sintered silver (Ag). Henkel pioneered pressure-less sintering die attach, allowing the use of standard, low-stress processing, and we have now formulated our fourth and highest thermal conductivity material to date, which tackles the stringent thermal and electrical requirements of next-generation power packages.”
Henkel’s newest pressure-less sintering die attach formulation meets multiple metrics for power semiconductors like MOSFETs, which are increasingly incorporating silicon carbide (SiC) and gallium nitride (GaN) materials as alternatives to silicon (Si) for improved efficiency. Loctite Ablestik ABP 8068TI is compatible with traditional Si and newer wide-bandgap semiconductors, among other power discrete devices. The 165 W/m-K ultra-high thermal conductivity die attach adhesive has demonstrated excellent sintering properties with good adhesion on copper (Cu), pre-plated frames (PPF), silver (Ag), and gold (Au) lead frames, robust electrical conductivity and stable RDS(on) after 1,000 hours of thermal cycling, and MSL 3 reliability.
Recommended for dies measuring 3.0 mm x 3.0 mm or smaller, Loctite Ablestik ABP 8068TI fully cures at 175° C or above to form a rigid sintered Ag network in the bulk epoxy and at the interface. Because pressure-less sintering is a drop-in replacement for standard die attach, high pressure is not required to achieve this robust structure, eliminating stress on thin die. Workability of the material is also notable at three hours of void-free open time and 24 hours of stage time with no degradation in shear strength.
As Trichur concludes, the power device market will only accelerate in application uses and performance requirements, making high-capability, high thermal die attach solutions an operational necessity: “There is an increased demand for power devices across market sectors, including automotive, industrial power storage and conversion, and aerospace, to name a few. For power semiconductors, sintered die attach is the prevailing and most reliable solution to deliver the die attach strength, integrity, and thermal and electrical conductivity required. Loctite Ablestik ABP 8068TI provides all this in a formula that enables simple processing to protect thinner, more complex dies.”
Original – Henkel
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Infineon Technologies AG has broken ground for a new plant in Dresden together with political leaders from Brussels, Berlin and Saxony. EU Commission President Ursula von der Leyen, German Federal Chancellor Olaf Scholz, Saxony’s Prime Minister Michael Kretschmer and Dresden’s Mayor Dirk Hilbert symbolically launched construction work together with Infineon CEO Jochen Hanebeck. With an investment volume of five billion euros, the new plant is the largest single investment in Infineon’s history.
“With this groundbreaking, Infineon is launching an important contribution to the green and digital transformation of our society,” said Hanebeck. “Global semiconductor demand will grow strongly and persistently in view of the high demand for renewable energies, data centers and electromobility. Our new plant will serve our customers’ demands in the second half of the decade. Together, we are driving decarbonization and digitalization.”
“In times of increasing geopolitical risks, it is great news for Europe that Infineon is investing massively in semiconductor manufacturing in Dresden”, said von der Leyen. “We need more such projects in Europe as demand for microchips will continue to rise rapidly. The EU Commission and member states are mobilizing 43 billion euros over the next few years under the European Chips Act to create a stronger and more resilient Europe in the digital domain.”
“Chips are the basis of any essential transformation technology – from wind farm to charging station. We welcome Infineon’s continued investment in Germany and thus further strengthening our country as one of the world’s most important semiconductor locations,” Scholz emphasized on the occasion of the groundbreaking event. “Chips made in Dresden help secure jobs and make our industry – from midsize companies to large corporations – more resilient. Dresden is where the components are created, that are needed for upcoming investments in green technologies.”
“Infineon’s investment will strengthen Europe, Germany and Saxony as an economic location,” says Kretschmer. “The construction of the new plant will both secure and create high-value jobs in Dresden. At the same time the attractiveness of Silicon Saxony as a center of expertise for the global semiconductor industry is increasing. For years, the state of Saxony has been supporting this unique ecosystem by investing in science.”
In addition, the investment by Infineon strengthens the manufacturing basis for the semiconductors that drive decarbonization and digitalization. Analog/mixed-signal components are used in power supply systems, for example in energy-efficient charging systems, small automotive motor control units, in data centers and in applications for the Internet of Things (IoT). The interaction of power semiconductors and analog/mixed-signal components makes it possible to create particularly energy-efficient and intelligent system solutions.
Expansion of production capacities at the existing Dresden site will let Infineon complete the project quickly and will also generate considerable effects of scale. Manufacturing activities are planned to begin in fall 2026. The expansion will create approximately 1,000 highly qualified jobs. Preparatory measures are currently taking place at the site of the new plant; the start of shell construction is planned for fall 2023.
The plant will be equipped with the latest in environmental technologies and will be among the most environmentally friendly manufacturing facilities of its kind. Thanks to advanced digitalization and automation, Infineon is also setting new standards for manufacturing excellence in Dresden. The new plant will be closely linked with the Infineon Villach site as “One Virtual Fab”. This manufacturing complex for power electronics is based on highly efficient 300-millimeter technology and will increase efficiency levels, giving Infineon additional flexibility in order to supply its customers faster.
In February, the German Federal Ministry for Economic Affairs and Climate Action (BMWK) has approved an early project launch, meaning that construction can already begin before completion of the inspection of legal subsidy aspects by the European Commission. Subject to the European Commission’s state aid decision and the national grant procedure, the project is to be funded in accordance with the objectives of the European Chips Act. Infineon is seeking public funding of around one billion euros.
Original – Infineon Technologies
