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Toshiba Electronic Devices & Storage Corporation launched 650V N-channel power MOSFETs “TK068N65Z5, TK095E65Z5, TK095A65Z5, TK095V65Z5, TK115E65Z5, TK115A65Z5, TK115V65Z5 and TK115N65Z5” and added them to the lineup of Toshiba’s latest-generation DTMOSVI series with high-speed diodes (DTMOSVI (HSD)) that uses super junction structure and is suitable for high-efficiency switching power supplies for data centers and power conditioners for photovoltaic generators. Packages of the new products are TO-247, TO-220SIS, TO-220 and DFN8×8.
The new products with the DTMOSVI (HSD) process use high-speed diodes to improve the reverse recovery characteristics important for bridge circuit and inverter circuit applications. Against Toshiba’s existing product TK090A65Z of the standard type DTMOSVI, the new product TK095A65Z5 achieves an approximately 65% reduction in reverse recovery time (trr), and an approximately 88% reduction in reverse recovery charge (Qrr) (measurement conditions: -dIDR/dt=100A/μs).
In addition, the DTMOSVI (HSD) process improves on the reverse recovery characteristics of Toshiba’s existing products DTMOSIV series with high-speed diodes (DTMOSIV (HSD)), and has a lower drain cut-off current at high temperatures. Furthermore, the figure of merit “drain-source On-resistance × gate-drain charge” is also lower.
The high temperature drain cut-off current of the new product TK095A65Z5 is approximately 91% lower, and the drain-source On-resistance × gate-drain charge approximately 70% lower, than in Toshiba’s existing product TK35A65W5. This advance will cut equipment power loss and help to improve efficiency.
A reference design, “1.6kW Server Power Supply (Upgraded)“, that uses the same series product TK095N65Z5 is available on Toshiba’s website.
Toshiba also offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available.
Toshiba also will continue to expand its lineup of the DTMOSVI series. This will enhance switching power supply efficiency, contributing to energy-saving equipment.
Applications
Industrial equipment
- Switching power supplies (data center servers, communications equipment, etc.)
- EV charging stations
- Power conditioners for photovoltaic generators
- Uninterruptible power systems
Features
- MOSFETs with high-speed diodes in the latest-generation DTMOSVI series
- Reverse recovery time due to high-speed diodes:
TK068N65Z5 trr=135ns (typ.)
TK095E65Z5, TK095A65Z5, TK095V65Z5 trr=115ns (typ.)
TK115E65Z5, TK115A65Z5, TK115V65Z5, TK115N65Z5 trr=110ns (typ.) - High-speed switching time due to low gate-drain charge:
TK068N65Z5 Qgd=22nC (typ.)
TK095E65Z5, TK095A65Z5, TK095V65Z5 Qgd=17nC (typ.)
TK115E65Z5, TK115A65Z5, TK115V65Z5, TK115N65Z5 Qgd=14nC (typ.)
Original – Toshiba
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Nexperia released 650V ultra- and hyperfast recovery rectifiers in D2PAK Real-2-Pin (R2P) packaging for use in various automotive, industrial and consumer applications including charging adapters, photovoltaic (PV), inverters, servers and switched mode power supplies (SMPS).
Combining planar die technology with a state-of-the-art junction termination (JTE) design, these rectifiers offer high power density, fast switching times with soft recovery and excellent reliability. They are encapsulated in a D2PAK Real-2-Pin Package (SOT8018), which offers the same package outline as the standard D2PAK package but has only two pins instead of three (the middle cathode pin has been removed). This increases the pin-to-pin distance from 1.25mm to over 4mm, which allows to meet the creepage and clearance requirements stated in the IEC 60664 standard.
“These recovery rectifiers further demonstrate Nexperia’s expertise in the field of semiconductor device packaging” according to Frank Matschullat, Head of Product Group Power Bipolar Discretes at Nexperia. “By taking the innovative step of removing the cathode pin from a standard D2PAK package, Nexperia has created a Real-2-Pin package that can meet the creepage and clearance requirements, in particular for high voltage automotive applications.”
Original – Nexperia
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Vishay Intertechnology, Inc. introduced 16 new Gen 3 1200 V silicon carbide (SiC) Schottky diodes. Featuring a merged PIN Schottky (MPS) design, the Vishay Semiconductors devices combine high surge current robustness with low forward voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power designs.
The next-generation SiC diodes released today consist of 5 A to 40 A devices in the TO-220AC 2L, TO-247AD 2L, and TO-247AD 3L through-hole and D2PAK 2L (TO-263AB 2L) surface-mount packages. The diodes offer a low capacitance charge down to 28 nC, while their MPS structure — which features a backside thinned via laser annealing technology — delivers a reduced forward voltage drop of 1.35 V. In addition, the devices’ low typical reverse leakage current down to 2.5 µA at 25 °C reduces conduction losses, ensuring high system efficiency during light loads and idling. Unlike ultrafast diodes, the Gen 3 devices have virtually no recovery tail, which further improves efficiency.
Typical applications for the diodes will include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters for solar power inverters; energy storage systems; industrial drives and tools; and datacenters. For the harsh environments of these applications, the devices combine operating temperatures to +175 °C with forward surge ratings to 260 A for high robustness. In addition, diodes in the D2PAK 2L package feature a molding compound with a high CTI ≥ 600, ensuring excellent electrical insultation at elevated voltages.
Offering high reliability, the RoHS-compliant and halogen-free devices have passed higher temperature reverse bias (HTRB) testing of 2000 hours and temperature cycling testing of 2000 thermal cycles.
Device Specification Table:
Part # IF(AV) (A) IFSM (A) VF at IF (V) QC (nC) Configuration Package VS-3C05ET12T-M3 5 42 1.35 28 Single TO-220AC 2L VS-3C10ET12T-M3 10 84 1.35 55 Single TO-220AC 2L VS-3C15ET12T-M3 15 110 1.35 81 Single TO-220AC 2L VS-3C20ET12T-M3 20 180 1.35 107 Single TO-220AC 2L VS-3C05ET12S2L-M3 5 42 1.35 28 Single D2PAK 2L VS-3C10ET12S2L-M3 10 84 1.35 55 Single D2PAK 2L VS-3C15ET12S2L-M3 15 110 1.35 81 Single D2PAK 2L VS-3C20ET12S2L-M3 20 180 1.35 107 Single D2PAK 2L VS-3C10EP12L-M3 10 84 1.35 55 Single TO-247AD 2L VS-3C15EP12L-M3 15 110 1.35 81 Single TO-247AD 2L VS-3C20EP12L-M3 20 180 1.35 107 Single TO-247AD 2L VS-3C30EP12L-M3 30 260 1.35 182 Single TO-247AD 2L VS-3C10CP12L-M3 2 x 5 42 1.35 28 Common cathode TO-247AD 3L VS-3C20CP12L-M3 2 x 10 84 1.35 55 Common cathode TO-247AD 3L VS-3C30CP12L-M3 2 x 15 110 1.35 81 Common cathode TO-247AD 3L VS-3C40CP12L-M3 2 x 20 180 1.35 107 Common cathode TO-247AD 3L Samples and production quantities of the new SiC diodes are available now, with lead times of 13 weeks.
Original – Vishay Intertechnology
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Infineon Technologies AG introduced the new CoolGaN™ Transistor 700 V G4 product family. The devices are highly efficient for power conversion in the voltage range up to 700 V. In contrast to other GaN products on the market, the input and output figures-of-merit of these transistors provide a 20 percent better performance, resulting in increased efficiency, reduced power losses, and more cost-effective solutions. The combination of electrical characteristics and packaging ensures maximum performance in many applications such as consumer chargers and notebook adapters, data center power supplies, renewable energy inverters, and battery storage.
The product series comprises 13 devices with a voltage rating of 700 V and on-resistance range from 20 mΩ to 315 mΩ. The increased granularity in device specification, combined with a wide range of industry standard package options including PDFN, TOLL and TOLT allow R DS resistance and packages to be selected according to application requirements. As a result, both electrical and thermal system performance can be optimized and implemented in the most cost-effective solution.
The devices are characterized by a fast turn-on and turn-off speed and minimal switching losses. The on-resistance range enables power systems from 20 W to 25,000 W. In addition, the 700 V E-mode with the industry’s highest transient voltage of 850 V increases the reliability of the overall system as it offers greater robustness against anomalies in the user environment such as voltage peaks.
The CoolGaN Transistor 700 V G4 products in TOLL, PDFN 5×6 and 8×8 packages are available now, more variety in R DS(on) as well as the TOLT package will follow later this year.
Original – Infineon Technologies
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WeEn Semiconductors announced an expansion to its range of high-performance and rugged IGBTs. Offering voltage ratings of 650V and 1200V, the new devices incorporate a fast recovery anti-parallel diode and boast extremely low leakage currents and exceptional conduction and switching characteristics at both high and low junction temperatures.
Based on an advanced fine trench gate field-stop (FS) technology, the new IGBTs provide a more uniform electric field within the chip, support higher breakdown voltages and offer improved dynamic control. By offering the optimum trade-off between conduction and switching losses, as well as an enhanced EMI design, the devices will maximize efficiency in a wide variety of mid- to high-switching-frequency power conversion designs.
The new IGBTs offer ratings of 650V/75A, 1200V/40A and 1200V/75A and are supplied in TO247 or TO247-4L packages depending on the selected device. All of the devices will operate with a maximum junction temperature (Tj) of 175 °C and have undergone high-voltage H3TRB (high-humidity, high-temperature and high-voltage reverse bias) and 100%-biased HTRB (high-temperature reverse bias) tests up to this maximum.
Target applications for the new WeEn IGBTs include solar inverters, motor control systems, uninterruptible power supplies (UPS) and welding. A positive temperature coefficient simplifies parallel operation in applications where higher performance is required, while options for bare die, discrete and module product variants provide flexibility for a wide variety of target designs.
Original – WeEn Semiconductors
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At PCIM Europe 2024 Leapers Semiconductor unveiled the next-generation molded half-bridge SiC modules for main drive applications (LPS-Pack series). This new series was specifically developed to meet the unique requirements of a renowned international automotive manufacturer.
Key Advantages of the New Module:
- Innovative Design Concept: Utilizing Pressfit Pin technology for signal and current transmission, the design achieves SiC on PCB, allowing current to pass directly through the PCB. This significantly reduces the parasitic inductance of the module and system, minimizes the controller’s size, and lowers the cost of the controller’s busbar and capacitors.
- Advanced Molding Process: The new molding process allows the module’s Tjmax to reach 200℃.
- Unique Module Design: Ensures substrate flatness, facilitating large-area sintering between the module and the heatsink. This reduces the system’s thermal resistance and enhances yield control processes.
- High Power Density: A single module (area < 26cm²) achieves a maximum current output of over 300 Arms. The system design is extremely compact and cost-effective.
- Versatile Application: Suitable for platform-based and modular development applications. The series currently covers 300-600 Arms, addressing various power requirements for different customer applications.
- Mass Production Ready: Offers superior product consistency and yield, making it more competitive than similar half-bridge modules.
The LPS-Pack series’ distinctive design and unique advantages set it apart from other molded solutions.
Original – Leapers Semiconductor
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ROHM has developed four models as part of the TRCDRIVE pack™ series with 2-in-1 SiC molded modules (two of 750V-rated: BSTxxxD08P4A1x4, two of 1,200V-rated: BSTxxxD12P4A1x1) optimized for xEV (electric vehicles) traction inverters. TRCDRIVE pack™ supports up to 300kW and features high power density and a unique terminal configuration – help solving the key challenges of traction inverters in terms of miniaturization, higher efficiency, and fewer person-hours.
As the electrification of cars rapidly advances towards achieving a decarbonized society, the development of electric powertrain systems that are more efficient, compact, and lightweight is currently progressing. However, for SiC power devices that are attracting attention as key components, achieving low loss in a small size has been a difficult challenge. ROHM solves these issues inside powertrains with its TRCDRIVE pack™.
A trademark brand for ROHM SiC molded type modules developed specifically for traction inverter drive applications, TRCDRIVE pack™ reduces size by utilizing a unique structure that maximizes heat dissipation area. On top, ROHM’s 4th Generation SiC MOSFETs with low ON resistance are built in – resulting in an industry-leading power density 1.5 times higher than that of general SiC molded modules while greatly contributing to the miniaturization of inverters for xEVs.
The modules are also equipped with control signal terminals using press fit pins enabling easy connection by simply pushing the gate driver board from the top, reducing installation time considerably. In addition, low inductance (5.7nH) is achieved by maximizing the current path and utilizing a two-layer bus-bar structure for the main wiring, contributing to lower losses during switching.
TRCDRIVE pack™ is scheduled to be launched by March 2025 with a lineup of 12 models in different package sizes (Small / Large) and mounting patterns (TIM: heat dissipation sheet / Ag sinter). In addition, ROHM is developing a 6-in-1 product with built-in heat sink that is expected to facilitate rapid traction inverter design and model rollout tailored to a variety of design specifications.
Original – ROHM
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In the current rapidly evolving electronics industry, there is an increasing demand for high-performance MOSFETs. With its superior specifications and robust design, the MS2N350HGC0 MOSFET stands out as an innovative solution for a wide range of high-voltage applications.
The MS2N350HGC0 MOSFET has been designed to meet the rigorous specifications of contemporary electronics, offering an unparalleled combination of features and performance. This MOSFET is the ideal choice for high-voltage power supplies, capacitor discharge, pulse circuits and laser and X-ray generation systems. With a maximum drain-source voltage of 3500V and a continuous drain current of 2A, it is capable of withstanding the high voltage applications on the market.
One of the standout features of the MS2N350HGC0 is its rapid intrinsic diode and minimized gate charge.. This enables the device to operate at high speeds, which is crucial for applications that necessitate rapid response times. Moreover, the MOSFET exhibits exceedingly low intrinsic capacitances, which further enhances its performance in demanding applications.
The MS2N350HGC0’s on-state resistance (Rds) of 19Ω further enhances its performance, allowing for efficient energy transfer and minimal heat generation. This makes it an excellent choice for power supplies and other applications where efficiency and reliability are paramount.
The product is packaged in accordance with the industry standard TO-247, thereby ensuring compatibility with a wide range of existing systems. Its compact size and lightweight design facilitate integration into any application.
The MOSFET’s electrical ratings are noteworthy for their impressive nature. This product is capable of withstanding a continuous drain current of 2A at 25°C and 1.6A at 100°C, with a pulsed drain current of up to 6A. This makes it suitable for even the most demanding applications. Furthermore, its total dissipation of 463 watts at 25°C guarantees reliable operation even under heavy load conditions.
The MS2N350HGC0 also offers excellent avalanche and thermal performance. It has an avalanche current of 1.3A and can withstand a single pulse avalanche energy of 81mJ. The operating junction temperature ranges from -55°C to 150°C, ensuring stable performance even in extreme environments.
For ease of installation, the MS2N350HGC0 has a maximum lead temperature for soldering purposes of 300°C and a mounting torque of 1.13N·m. This ensures that the MOSFET can be securely mounted into any system with minimal effort.
In conclusion, the MS2N350HGC0 MOSFET is a powerful and reliable solution for high-voltage applications. The superior performance, compact design, and excellent thermal stability of the product make it the optimal choice for a diverse range of applications. To gain further insight into this innovative new product, we invite you to contact our sales team. We encourage you to explore the potential of the MS2N350HGC0 MOSFET and discover how it can revolutionize your high-voltage applications.
Original – Maspower Semiconductor
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Crystal IS, an Asahi Kasei company, announced production of 100 mm diameter single-crystal aluminum nitride (AlN) substrates with 99% usable area, based on current requirements for UVC LEDs. This improved quality is steadily approaching that of Crystal IS’ existing 2-inch substrates used in the production of its UVC LEDs. The ultra-wide bandgap and high thermal conductivity of AlN helps improve device reliability and performance in both UVC LEDs and other next generation RF and power devices.
“The improvement of our large diameter substrate quality over the last nine months showcases the expertise of our team in aluminum nitride innovation,” said Eoin Connolly, President and CEO of Crystal IS. “The inherent benefits of aluminum nitride are unlocking new applications in RF and power devices—we are excited to work with our partners to further develop this material to meet their needs.”
This achievement follows the company’s announcement of the first ever recorded 100 mm diameter in August 2023, which won an excellence award at Semiconductor of the Year in electronic materials for the Semiconductors Category. The Semiconductor of the Year Awards are organized by Electronic Device Industry News, an industry journal published in Tokyo by SangyoTimes Inc.
Crystal IS manufactures bulk aluminum nitride substrates at its headquarters in Green Island, New York and began selling 2-inch diameter substrates for research and development in RF and power devices in late 2023. This 100 mm diameter milestone accelerates the development of new applications on aluminum nitride substrates as it integrates into existing fabrication lines for power and RF devices using alternative materials. The company plans to offer 100 mm diameter substrates manufactured in its US facility to key partners this year as they expand their focus beyond UVC LEDs.
Original – Crystal IS
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EPC Space announced the introduction of two new rad-hard GaN discretes with low on-resistance and extremely low gate charge for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET.
The EPC7001BSH is a Rad-Hard eGaN® 40 V, 50 A, 11 mΩ Surface Mount (FSMDB) and the EPC7002ASH is a Rad-Hard eGaN 40 V, 15 A, 28 mΩ Surface Mount (FSMDA). Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These devices come packaged in hermetic packages in very small footprints.
EPC’s eGaN FETs and ICs offer a higher performing alternative to conventional rad hard silicon devices for high reliability and space applications. EPC’s Rad hard devices are significantly smaller, have 40 times better electrical performance, and lower overall cost than rad hard silicon devices. Moreover, EPC Space’s rad hard devices exhibit superior resistance to radiation, supporting higher total radiation levels and SEE LET levels compared to traditional silicon solutions.
Part Number Drain to Source Voltage (VDS) Drain to Source Resistance (RDS(on)) Single-Pulse Drain Current (IDM) Package Size (mm) Total Dose (TID) Heavy Ion Single Event Effects (SEE) EPC7001BSH 40 11 mΩ 120 5.7 x 3.9 1 Mrad SEE immunity up to LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated Breakdown EPC7002ASH 40 28 mΩ 40 3.4 x 3.4 1 Mrad SEE immunity up to LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated Breakdown With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.
Applications benefiting from the performance of these products include DC-DC power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, deep space probes, and ion thrusters.
“These two new additions to our rad-hard product line offer designers high power and low on-resistance solutions enabling a generation of power conversion and motor drives in space operating at higher efficiencies, and greater power densities than what is achievable with traditional silicon-based rad-hard solutions,” said Bel Lazar, CEO of EPC Space.
Original – EPC Space
