-
Micro Commercial Components introduced the latest auto-grade N-channel power MOSFETs with up to 2.5mΩ on-resistance: MCACL220N06YHE3, MCACL2D5N06YL, MCACL280N04YHE3, and MCACL330N04YHE3.
Optimized for high current output, these powerful components boast RDS(on) as low as 0.8mΩ in a sleek, engineer-friendly DFN5060 package. You can enhance power management and ramp up efficiency with minimal losses and the confidence that come along with AEC-Q101 qualification and the MCC name.
With high power density, MCC’s new 40V and 60V MOSFETs are designed to handle harsh conditions and operating junction temps up to 175℃ with ease, making them ideal for diverse automotive and industrial applications — from battery management systems and electric power steering to lighting controls, water pumps, and solar power systems.
Features & Benefits:
- AEC-Q101 qualified for reliability
- Advanced split-gate trench (SGT) technology
- Excellent thermal performance & efficiency
- Low RDS(on) minimizes power losses
- High power density packagey
- High junction temperature up to 175℃
- Compact DFN5060 package saves space and material costs
Original – Micro Commercial Components
-
Motor drive applications are taking a leap forward with the launch of the Infineon Technologies AG OptiMOS™ 6 200 V MOSFET product family. The new portfolio is designed to deliver optimal performance in applications such as e-scooters, micro-EVs, and E-forklifts.
The improved conduction losses and switching behavior for these new MOSFETs reduce the electromagnetic interference (EMI) and switching losses. This benefits various switching applications, including servers, telecom, energy storage systems (ESS), audio, solar and others.
Additionally, the combination of a wide safe operating area (SOA) and industry-leading R DS(on) results in a perfect fit for static switching applications such as battery management systems. With the introduction of the new OptiMOS 6 200 V product family, Infineon sets a new industry benchmark with increased power density, efficiency, and system reliability for its customers’ benefit.
The OptiMOS 6 200 V portfolio delivers enhanced technical features compared to its predecessor, the OptiMOS 3. It features a 42 percent lower R DS(on) that contributes to reduced conduction losses and increased output power. Regarding diode behavior, the OptiMOS 6 200 V provides a significant increase in softness, more than three times that of the OptiMOS 3.
Combined with up to 89 percent reduction in Q rr(typ), the switching and EMI behaviors are significantly improved. The technology also features improvements in parasitic capacitance linearity (C oss and C rss), which reduces oscillation during switching and lowers voltage overshoot. A tighter V GS(th) spread and lower transconductance aid in MOSFET paralleling and current sharing, leading to more uniform temperatures and reducing the number of paralleled MOSFETs.
The OptiMOS 6 200 V products feature an improved SOA and are classified as MSL 1 according to J-STD-020. These RoHS-compliant, lead-free products align with current industry standards.
Original – Infineon Technologies
-
Infineon Technologies AG introduced the new CoolSiC™ MOSFETs 2000 V in the TO-247PLUS-4-HCC package to meet designers’ demand for increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions.
The CoolSiC MOSFETs offer a higher DC link voltage so that the power can be increased without increasing the current. It is the first discrete silicon carbide device with a breakdown voltage of 2000 V on the market and comes in a TO-247PLUS-4-HCC package with a creepage distance of 14 mm and clearance distance of 5.4 mm. With low switching losses, the devices are ideal for solar (e.g. string inverters) as well as energy storage systems and electric vehicle charging applications.
The CoolSiC MOSFET 2000 V product family is ideally suited for high DC link systems with up to 1500 V DC. Compared to 1700 V SiC MOSFETs, the devices also provide a sufficiently high overvoltage margin for 1500 V DC systems. The CoolSiC MOSFETs deliver a benchmark gate threshold voltage of 4.5 V and are equipped with a robust body diode for hard commutation. Due to the .XT connection technology, the components offer first-class thermal performance. They are also highly resistant to humidity.
In addition to the CoolSiC MOSFETs 2000 V, Infineon will soon be launching the matching CoolSiC diodes: The first launch will be the 2000 V diode portfolio in the TO-247PLUS 4-pin package in the third quarter of 2024, followed by the 2000 V CoolSiC diode portfolio in the TO-247-2 package in the final quarter of 2024. These diodes are particularly suitable for solar applications. A matching gate driver portfolio is also available.
The CoolSiC MOSFET 2000 V product family is available now. In addition, Infineon also offers a suitable evaluation board: the EVAL-COOLSIC-2KVHCC. Developers can use the board as a precise universal test platform to evaluate all CoolSiC MOSFETs and diodes 2000 V and the EiceDRIVER™ Compact Single Channel Isolated Gate Driver 1ED31xx product family through double pulse or continuous PWM operation.
Original – Infineon Technologies
-
STMicroelectronics released automotive-grade 600V/650V super-junction MOSFETs in STPOWER MDmesh DM9 AG series which deliver superior efficiency and ruggedness for on-board chargers (OBCs) and DC/DC converter applications in both hard- and soft-switching topologies.
With outstanding RDS(on) per die area and minimal gate charge, the silicon-based devices combine low energy losses with outstanding switching performance, setting a new benchmark figure of merit. Compared to the previous generation, the latest MDmesh DM9 technology ensures a tighter gate-source threshold voltage (VGS(th)) spread that results in sharper switching for lower turn-on and turn-off losses.
In addition, body-diode reverse recovery is improved, leveraging a new optimized process that also increases the MOSFETs’ overall ruggedness. The diode’s low reverse-recovery charge (Qrr) and fast recovery time (trr) make the MDmesh DM9 AG series ideal for phase-shift zero-voltage switching topologies that demand the utmost efficiency.
The family offers a selection of through-hole and surface-mount packages that help designers achieve a compact form factor with high power density and system reliability. The TO-247 LL (long-lead) is a popular through-hole option that eases design-in and leverages proven assembly processes. Among the surface-mount packages, the H2PAK-2 (2 leads) and H2PAK-7(7 leads) are optimized for bottom-side cooling with thermal substrates or PCBs featuring thermal vias or other enhancement. HU3PAK and ACEPACK™ SMIT topside-cooled surface-mount packages are also available.
The first device in the new STPOWER MDmesh DM9 AG series is the STH60N099DM9-2AG, a 27A AEC-Q101 qualified N-channel 600V device in H2PAK-2, with 76mΩ typical RDS(on). ST will expand the family to provide a full range of devices, covering a broad range of current ratings and RDS(on) from 23mΩ to 150mΩ.
Original – STMicroelectronics
-
Toshiba Electronic Devices & Storage Corporation has started mass production of a 3rd generation silicon carbide (SiC) 1700 V and drain current (DC) rating 250 A of SiC MOSFET module “MG250V2YMS3” for industrial equipment and has expanded its lineup.
The new product MG250V2YMS3 offers low conduction loss with low drain-source on-voltage (sense) of 0.8 V (typ.). It also offers low switching loss with low turn-on switching loss of 18 mJ (typ.) and low turn-off switching loss of 11 mJ (typ.). This helps to reduce power loss of equipment and the size of cooling device.
MG250V2YMS3 has a low stray inductance of 12 nH (typ.) and is capable of high-speed switching. In addition, it suppresses surge voltage in switching operation. Thus, it is available for high frequency isolated DC-DC converter.
Toshiba’s SiC MOSFET module of 2-153A1A package has a lineup of four existing products, MG250YD2YMS3 (2200 V / 250 A), MG400V2YMS3 (1700 V / 400 A), and MG600Q2YMS3 (1200 V / 600 A), including new products. This provides a wider range of product selection.
Toshiba will continue to meet the needs for high efficiency and the downsizing of industrial equipment.
Applications
Industrial equipment
- Inverters and converters for railway vehicles
- Auxiliary power supply for railway vehicles
- Renewable energy power generation systems
- Motor control equipment for industrial equipment
- High frequency DC-DC converters, etc.
Features
- Low drain-source on-voltage (sense):
VDS(on)sense=0.8 V (typ.) (ID=250 A, VGS=+20 V, Tch=25 °C) - Low turn-on switching loss:
Eon=18 mJ (typ.) (VDD=900 V, ID=250 A, Tch=150 °C) - Low turn-off switching loss:
Eoff=11 mJ (typ.) (VDD=900 V, ID=250 A, Tch=150 °C) - Low stray inductance:
LsPN=12 nH (typ.)
Original – Toshiba
-
Infineon Technologies AG opens a new chapter in power systems and energy conversion and introduces the next generation of silicon carbide (SiC) MOSFET trench technology. The new Infineon CoolSiC™ MOSFET 650 V and 1200 V Generation 2 improve MOSFET key performance figures such as stored energies and charges by up to 20 percent compared to the previous generation without compromising quality and reliability levels leading to higher overall energy efficiency and further contributing to decarbonization.
CoolSiC MOSFET Generation 2 (G2) technology continues to leverage performance capabilities of silicon carbide by enabling lower energy loss that turns into higher efficiency during power conversion. This provides strong benefits to customers for various power semiconductor applications such as photovoltaics, energy storage, DC EV charging, motor drives and industrial power supplies.
A DC fast charging station for electric vehicles which is equipped with CoolSiC G2 allows for up to 10 percent less power loss compared to previous generations, while enabling higher charging capacity without compromising form factors. Traction inverters based on CoolSiC G2 devices can further increase electric vehicle ranges. In the area of renewable energies, solar inverters designed with CoolSiC G2 make smaller sizes possible while maintaining a high power output, resulting in a lower cost per watt.
“Megatrends call for new and efficient ways to generate, transmit and consume energy. With the CoolSiC MOSFET G2, Infineon brings silicon carbide performance to a new level,” said Dr. Peter Wawer, Division President Green Industrial Power at Infineon.
“This new generation of SiC technology enables the accelerated design of more cost-optimized, compact, reliable, and highly efficient systems harvesting energy-savings and reducing CO 2 for every watt installed in the field. It’s a great example of Infineon’s relentless spirit, constantly pushing for innovation to drive decarbonization and digitalization in the industrial, consumer and automotive sectors.”
Contributing to high-performance CoolSiC G2 solutions, Infineon’s pioneer CoolSiC MOSFET trench technology provides an optimized design trade-off, allowing higher efficiency and reliability compared to SiC MOSFET technology available so far. Combined with the award-winning .XT packaging technology, Infineon is further increasing the potential of designs based on CoolSiC G2 with higher thermal conductivity, better assembly control and improved performance.
Mastering all relevant power technologies in silicon, silicon carbide and gallium nitride (GaN), Infineon offers design flexibility and leading-edge application know-how that meet the expectations and demands of modern designers. Innovative semiconductors based on wide-bandgap (WBG) materials like SiC and GaN are the key to conscious and efficient use of energy in fostering decarbonization.
Original – Infineon Technologies
-
Vishay Intertechnology, Inc. introduced a new 80 V symmetric dual n-channel power MOSFET that combines high and low side TrenchFET® Gen IV MOSFETs in a single 3.3 mm by 3.3 mm PowerPAIR® 3x3FS package. For power conversion in industrial and telecom applications, the Vishay Siliconix SiZF4800LDT increases power density and efficiency, while enhancing thermal performance, reducing component counts, and simplifying designs.
This dual MOSFET can be used in place of two discrete devices typically specified in the PowerPAK 1212 package — saving 50 % board space. The device provides designers with a space-saving solution for synchronous buck converters, point of load (POL) converters, and half- and full-bridge power stages for DC/DC converters in radio base stations, industrial motor drives, welding equipment, and power tools. In these applications, the high and low side MOSFETs of the SiZF4800LDT form an optimized combination for 50 % duty cycles, while its logic level turn-on at 4.5 V simplifies circuit driving.
To increase power density, the MOSFET offers best in class on-resistance down to 18.5 mW typical at 4.5 V. This is 16 % lower than the closest competing device in the same package dimensions. For increased efficiency in high frequency switching applications, the SiZF4800LDT offers a low on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power conversion applications — of 131mW*nC and on-resistance times gain-drain charge
The device’s flip-chip technology enhances thermal dissipation — resulting in 54 % lower thermal resistance compared to competing MOSFETs. The SiZF4800LDT’s combination of low on-resistance and thermal resistance results in a continuous drain current of 36 A, which is 38 % higher than the closest competing device. The MOSFET features a unique pin configuration that enables a simplified PCB layout and supports shortened switching loops to minimize parasitic inductance. The SiZF4800LDT is 100 % Rg- and UIS-tested, RoHS-compliant, and halogen-free.
Competitor Comparison Table:
Part number SiZF4800LDT (New) Competitor SiZF4800LDTPerformance improved Package PowerPAIR 3x3FS PowerPAIR 3x3FS Dimensions (mm) 3.3 x 3.3 x 0.75 3.3 x 3.3 x 0.75 – Configuration Symmetric dual Symmetric dual – VDS (V) 80 80 – VGS (V) ± 20 ± 20 – RDS(on) (mΩ) @ 4.5 VGS Typ. 18.5 22 +16 % Max. 23.8 29 +18 % Qg (nC) @ 4.5 VGS Typ. 7.1 6.0 – FOM – 131 132 +1 % ID (A) Max. 36 26 +38 % RthJC (C/W) Max. 2.2 4.8 +54 % Original – Vishay Intertechnology
-
Vitesco Technologies is preparing the series application of its High Voltage Box. The modular system makes charging, converting and distributing electricity in electric vehicles cheaper by integrating several functions in one unit, depending on the design.
This includes the vehicle On-Board Charger for AC charging on the grid with up to 22 kW of charging power, a DC current converter providing the current for the 12 V vehicle net, and power electronics which distribute high voltage power in the vehicle and facilitate fast DC-charging with up to 800 V.
Owed to the high level of mechatronic integration, the High Voltage Box has smaller space requirements to the vehicle while increasing the total system reliability in comparison to individual devices. State-of-the art silicon carbide (SiC) semiconductors boost charging efficiency to over 95 percent which lowers the vehicle owner’s electricity bill. This efficiency level is particularly beneficial for car owners because electric vehicles are frequently charged on the grid.
Due to the high AC charging rate of up to 22 kW the High Voltage Box charges the car with 200 km of range in under two hours. DC high-power charging with up to 800 V achieves the same range in 12 minutes. The sophisticated power electronics ensure that this system offers electrical safety as well as efficiency.
On a day-to-day level, charging, energy conversion and power distribution are just as relevant for a driver’s satisfaction with a vehicle as driving itself is. With our High Voltage Box, we integrate these core tasks of energy management into one efficient and compact unit. This integration makes electrification on a large scale and at low cost easier.
Thomas Stierle, Member of the Executive Board and head of the Electrification Solutions division of Vitesco Technologies
Today, the so-called On-Board Charger (OBC) for charging with alternating current (AC) on the grid is a separate device in the vehicle. This OBC inverts grid power to direct current (DC) that can be fed to the high voltage battery. Another separate device is the DC/DC converter which provides direct current from the high voltage battery to the 12 V power net – or it boosts 12 V to high voltage DC. A power electronics unit distributes high voltage current within the vehicle (hence: Power Distribution Unit, PDU). In addition, these electronics can be designed to allow DC charging with up to 800 V at high power charging points. All those components need to be connected, they require a housing, installation space, and cooling.
The modular and scalable High Voltage Box makes it easier to cover two or more of these functions with a single device. SiC technology is used to minimize the conversion losses of the unit:
A high level of efficiency brings the car owner’s electricity bill down and contributes to sustainability.
Christian Preis, Head of Base Development Energy Transformation at Vitesco Technologies
Within the modular design Vitesco Technologies covers all relevant European and worldwide grid topologies. The High Voltage Box was developed to support modular vehicle adaptation for the global market. At the same time, Vitesco Technologies is driving new functions ahead. The High Voltage Box for one of the two series applications will already function bidirectionally so that it can supply alternating current with 230 V from the DC battery current when this is required.
This puts vehicle owners in the comfortable position to make versatile use of their large battery. For instance, if they wish to use power tools far away from the grid, or if they want to feed electricity to the grid which they have charged earlier from their own photovoltaic system. “In the future, this option to stabilize the grid will continue to gain importance “, Preis adds. The company’s experts are advancing the necessary standard for this in key committees and are thus part of the decision-making process about development trends.
In the future the High Voltage Box with bidirectional function can also make it possible to power a whole house from the High Voltage Battery during a blackout. This is an option because batteries in vehicles have a much bigger capacity than most of the batteries typically installed in private homes.
Original – Vitesco Technologies
-
Infineon Technologies AG introduced a new product family of Solid-State Isolators to achieve faster and more reliable circuit switching with protection features not available in optical-based solid state relays (SSR). The isolators use coreless transformer technology and support 20 times greater energy transfer with both current and temperature protection contributing to a higher reliability and lower cost of ownership.
The new solid-state isolators allow driving the gates of Infineon’s MOS-controlled power transistors OptiMOS ™ and CoolMOS™ to reduce power dissipation of up to 70 percent of todays’ solid-state relays using SCR (silicon-controlled rectifier) and Triac switches.
Infineon’s solid-state isolators enable custom solid-state relays capable of controlling loads more than 1000 V and 100 A. Improved performance and reliability make coreless transformer technology ideal for applications in advanced battery management, energy storage, renewable energy systems, as well as industrial and building automation system applications. With Infineon’s solid-state isolator drivers, engineers can further improve the efficiency of electronic and electromechanical systems.
“Implementing coreless transformers in solid-state isolators and relays is truly a game-changer for power engineers; it provides 50 times lower RDS (on) than existing optically controlled solutions. This enables their use in higher-voltage and higher power applications,” said Davide Giacomini, Marketing Director for the Green Industrial Power Division at Infineon Technologies.
When matched with Infineon’s CoolMOS S7 switch, the isolator drivers enable switching designs with a much lower resistance compared to optically driven solid-state solutions. This translates to longer lifespans and lower cost of ownership in system designs. As with all solid-state isolators, the devices also offer superior performance compared to electromagnetic relays, including 40 percent lower turn-on power and increased reliability due to elimination of moving parts.
The family of devices is designed to be compatible with Infineon’s broad switching portfolio including Infineon’s CoolMOS S7, OptiMOS TM and linear FET portfolios.
Original – Infineon Technologies
-
Qorvo® announced four 1200V silicon carbide (SiC) modules – two half-bridge and two full-bridge – in a compact E1B package with RDS(on) starting at 9.4mΩ. These highly efficient SiC modules are excellent solutions for electric vehicle (EV) charging stations, energy storage, industrial power supplies and solar power applications.
“The modules in this new family can replace as many as four discrete SiC FETs, thus simplifying thermomechanical design as well as assembly. Our cascode technology also allows higher switching frequency operation, further reducing solution size by using smaller external components,” said Ramanan Natarajan, director of product line marketing for Qorvo’s SiC Power Products business.
“For our customers, the high efficiency of these modules streamlines the power supply design process, so they can focus on the design, layout, assembly, characterization and qualification of one module as opposed to numerous discrete components.”
Led by the 9.4mΩ UHB100SC12E1BC3N, these four SiC modules leverage Qorvo’s unique cascode configuration, which minimizes RDS(on) and switching losses to maximize efficiency, especially in soft-switching applications. Silver-sinter die attach reduces thermal resistance to as low as 0.23 °C/W; when combined with the stacked die construction found in the “SC” part numbers, power cycling performance is improved by 2X over comparable SiC power modules on the market.
Together, these characteristics contribute to superior thermal performance and reliability with the ease of use and power density of a highly integrated SiC power module.
The table below provides a snapshot of Qorvo’s new 1200V SiC module family:
Part # Description RDS(on) @25C (mΩ) UFB15C12E1BC3N 1200V, 15A SiC full-bridge module 70 UFB25SC12E1BC3N 1200V, 25A SiC full-bridge module 35 UHB50SC12E1BC3N 1200V, 50A SiC half-bridge module 19 UHB100SC12E1BC3N 1200V, 100A SiC half-bridge module 9.4 Qorvo’s suite of powerful design tools like its FET-Jet Calculator and QSPICE™ software aid in product selection and performance simulation. For more information about Qorvo’s advanced SiC solutions for industrial applications, please visit www.qorvo.com/go/sic.
Original – Qorvo
