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Semikron Danfoss and Vincotech announced the renewal of their cooperation agreement for power semiconductor module packaging. The two enterprise’s alliance, dating back to 2003, has been extended to further strengthen MiniSKiiP packaging technology.
This move underscores Semikron Danfoss and Vincotech’s commitment to advancing MiniSKiiP and delivering cutting-edge solutions that meet the needs of the power electronics industry.
“The partnership with Vincotech is key to ensuring the safe supply of our number one motor drive module MiniSKiiP to our customers,” said Peter Sontheimer, Senior Vice President Industry Division at Semikron Danfoss. “We strongly believe that this type of arrangement is beneficial to the long-term health of the power electronics supply chain.”
Multiple source options for the package to further mitigate the supply chain risk, as well as standards-compliant design, are just a few of the benefits of this renewed cooperation agreement. Engineered for easy assembly and featuring service-friendly spring contacts, MiniSKiiP’s unique hardware has earned an excellent reputation for efficiency and performance in general purpose and servo motor drives.
“We are delighted to be renewing our partnership with Semikron Danfoss for the MiniSKiiP package technology,” said Edoardo Guiotto, VP Sales & Marketing at Vincotech. “This agreement reaffirms our dedication to deliver premium products to our customers and drive innovation and advances in power electronics.”
Semikron Danfoss and Vincotech are now set to take MiniSKiiP’s reliability and standardization to the next level. Customers can look forward this technology bringing even greater robustness, versatility, and compatibility to their products.
Original – Semikron Danfoss
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As data centers become increasingly power-hungry to support the tremendous processing requirements of AI workloads, the need for boosting energy efficiency is paramount. The powerful combination of onsemi’s latest generation T10 PowerTrench® family and EliteSiC 650V MOSFETs create a solution that offers unparalleled efficiency and high thermal performance in a smaller footprint for data center applications.
Compared to a typical search engine request, an AI-supported engine request requires more than 10x the power, leading to data center power needs expected to reach an estimated 1,000 TWh globally in less than two years. To process one AI-supported request, energy is converted four times from the grid to the processor, which can result in an energy loss of approximately 12%.
Using the T10 PowerTrench family and EliteSiC 650V solution, data centers are able to reduce power losses that occur by an estimated 1%. If implemented in data centers globally, the solution could reduce energy consumption by 10 TWh annually or the equivalent of the energy required to fully power nearly one million homes per year.
The EliteSiC 650V MOSFET offers superior switching performance and lower device capacitances to achieve higher efficiency in data centers and energy storage systems. Compared to the previous generation, these new generation silicon carbide (SiC) MOSFETs have halved the gate charge and reduced both the energy stored in output capacitance (Eoss) and the output charge (Qoss) by 44%.
With no tail current during turn-off and superior performance at high temperatures, they can also significantly reduce switching losses compared to super junction (SJ) MOSFETs. This allows customers to downsize system components while increasing the operating frequency, resulting in an overall reduction in system costs.
Separately, the T10 PowerTrench Family is engineered to handle high currents, crucial for DC-DC power conversion stages, and offers increased power density and superior thermal performance in a compact footprint. This is achieved through a shield gate trench design, which boasts an ultra-low gate charge and an RDS (on) of less than 1 milliohm. Additionally, the soft recovery body diode and lower Qrr effectively minimizes ringing, overshoots, and electrical noise to ensure optimal performance, reliability, and robustness under stress. The T10 PowerTrench Family also meets the stringent standards required for automotive applications.
The combined solution also meets the stringent Open Rack V3 (ORV3) base specification required by hyperscale operators to support the next generation of high-power processors.
“AI and electrification are reshaping our world and skyrocketing power demands. Accelerating innovation in power semiconductors to improve energy efficiency is key to enabling these technological megatrends. This is how we power the future responsibly,” said Simon Keeton, group president, Power Solutions Group, onsemi. “Our latest solution can significantly reduce power losses that occur during the energy conversion process and have a meaningful impact on the demands for the next generation of data centers.”
Original – onsemi
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Toshiba Electronic Devices & Storage Corporation has started mass production of a 3rd generation silicon carbide (SiC) 1200 V and drain current (DC) rating 400 A of SiC MOSFET module “MG400Q2YMS3” for industrial equipment and has expanded its lineup.
The new product MG400Q2YMS3 offers low conduction loss with low drain-source on-voltage (sense) of 0.9 V (typ.). It also offers low switching loss with both turn-on switching loss and turn-off switching loss of 13 mJ (typ.). These help to reduce power loss of equipment and the size of cooling device.
MG400Q2YMS3 has a low stray inductance of 12 nH (typ.) and is capable of high-speed switching. In addition, it suppresses surge voltage in switching operation. Thus, it is available for high frequency isolated DC-DC converter.
Toshiba’s SiC MOSFET module of 2-153A1A package has a lineup of five existing products, MG250YD2YMS3 (2200 V / 250 A), MG400V2YMS3 (1700 V / 400 A), MG250V2YMS3 (1700 V / 250 A), and MG600Q2YMS3 (1200 V / 600 A), including new products. This provides a wider range of product selection.
Toshiba will continue to meet the needs for high efficiency and the downsizing of industrial equipment.
Applications
Industrial equipment
- Auxiliary power supply for railway vehicles
- Renewable energy power generation systems
- Motor control equipment for industrial equipment
- High frequency DC-DC converters, etc.
Features
- Low drain-source on-voltage (sense):
VDS(on)sense=0.9 V (typ.) (ID=400 A, VGS=+20 V, Tch=25 °C) - Low turn-on switching loss:
Eon=13 mJ (typ.) (VDD=600 V, ID=400 A, Tch=150 °C) - Low turn-off switching loss:
Eoff=13 mJ (typ.) (VDD=600 V, ID=400 A, Tch=150 °C) - Low stray inductance:
LsPN=12 nH (typ.)
Original – Toshiba
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Infineon Technologies AG announced two new CoolGaN™ product technologies, CoolGaN bidirectional switch (BDS) and CoolGaN Smart Sense. CoolGaN BDS provides exceptional soft- and hard-switching behavior, with bidirectional switches available at 40 V, 650 V and 850 V. Target Applications of this family include mobile device USB ports, battery management systems, inverters, and rectifiers.
The CoolGaN Smart Sense products feature lossless current sensing, simplifying design and further reducing power losses, as well as transistor switch functions integrated into one package. They are ideal for usage in consumer USB-C chargers and adapters.
The CoolGaN BDS high voltage will be available at 650 V and 850 V and feature a true normally-off monolithic bi-directional switch with four modes of operation. Based on the gate injection transistor (GIT) technology, the devices have two separate gates with substrate terminal and independent isolated control. They utilize the same drift region to block voltages in both directions with outstanding performance under repetitive short-circuit conditions.
Applications can benefit by using one BDS instead of four conventional transistors, resulting in higher efficiency, density, and reliability. Furthermore, significant cost savings are achieved. The devices optimize performance in the replacement of back-to-back switches in single-phase H4 PFC and HERIC inverters and three-phase Vienna rectifiers. Additional implementations include single-stage AC power conversion in AC/DC or DC/AC topologies.
The CoolGaN BDS 40 V is a normally-off, monolithic bi-directional switch based on Infineon’s in-house Schottky Gate GaN technology. It can block voltages in both directions, and through a single-gate and common-source design, it is optimized to replace back-to-back MOSFETs used as disconnect switches in battery-powered consumer products. The first 40 V CoolGaN BDS product has a 6 mΩ R DS(on), with a range of products to follow. Benefits of using 40 V GaN BDS vs. back-to-back Si FETs include 50 – 75 percent PCB area savings and a reduction of power losses by more than 50 percent, all at a lower cost.
The CoolGaN Smart Sense products feature 2 kV electrostatic discharge withstand and can connect to controller current sense for peak current control and overcurrent protection. The current sense response time is ~200 ns, which is equal or less than common controller blanking time for ultimate compatibility.
Implementing the devices results in increased efficiency and cost savings. At a higher R DSs(on) of e.g. 350 mΩ, the CoolGaN Smart Sense products offer similar efficiency and thermal performance at lower cost compared to traditional 150mΩ GaN transistors. Moreover, the devices are footprint compatible to Infineon’s transistor-only CoolGaN package, eliminating the need for layout rework and PCB respin, and further facilitating design with Infineon’s GaN devices.
Engineering samples of the CoolGaN BDS 40 V are available now for 6 mΩ and will follow in Q3 2024 for 4 mΩ and 9 mΩ. Samples of the CoolGaN BDS 650 V will be available in Q4 2024, and 850 V will follow early 2025. CoolGaN Smart Sense samples will be available in August 2024. Further information is available here: https://www.infineon.com/cms/en/product/promopages/GaN-innovations/
Original – Infineon Technologies
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Cambridge GaN Devices (CGD) announced two new packages for the company’s ICeGaN™ family of GaN power ICs that offer enhanced thermal performance and simplify inspection. Variants of the well-proven DFN style, both packages are extremely rugged and reliable.
Developed for CGD, the DHDFN-9-1 (Dual Heat-spreader DFN) is a thin, dual-side cooled package with a small, 10×10 mm footprint and wettable flanks to simplify optical inspection. It offers low thermal resistance (Rth(JC), and can be operated with bottom-side, top-side and dual-side cooling, offering flexibility in design and out-performing the often-used TOLT package in top-side and, especially, dual-side cooled configurations.
The DHDFN-9-1 package has been designed with dual-gate pinout to facilitate optimal PCB layout and simple paralleling, enabling customers to address applications up to 6 kW with ease. The BHDFN-9-1 (Bottom Heat-spreader DFN) is a bottom-side cooled package, also with wettable flanks for easy inspection. Thermal resistance is 0.28 K/W, matching or exceeding other leading devices. Measuring 10×10 mm, the BHDFN is smaller than the commonly-used TOLL package yet shares a similar footprint, hence a common layout with TOLL-packaged GaN power ICs is possible for ease of use and evaluation.
Nare Gabrielyan | Product Marketing Manager, CGD
“These new packages are part of our strategy to enable customers to use our ICeGaN GaN power ICs at higher power levels. Servers, data centres, inverters/motor drives, micro-inverters and other industrial applications are all beginning to enjoy the power density and efficiency benefits that GaN brings, but they are also more demanding. Therefore, it is essential for such applications that devices are also rugged and reliable, and easy to design in. These attributes are inherent in ICeGaN, and are supported and extended by the new packages.”
Improving thermal resistance performance has several benefits. First, more power output is available at the same RDS(on) . Devices also run at cooler temperatures for the same power, so less heatsinking is required, resulting in reduced system costs. Lower operating temperatures also lead to higher reliability and longer lifetimes. Finally, if cost is the constraint for the application, designers can use a lower cost part with a higher RDS(on) and still achieve the required power output.
The new packages will be shown for the first time publicly at the upcoming PCIM exhibition on CGD’s booth # 7 643, Nürnberg Messe, Nuremberg, Germany, 11-13th June 2024.
Original – Cambridge GaN Devices
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The electronics industry is witnessing a significant shift towards more compact and powerful systems, driven by technological advancements and a growing focus on decarbonization efforts. With the introduction of the Thin-TOLL 8×8 and TOLT packages, Infineon Technologies AG is actively accelerating and supporting these trends. They enable a maximum utilization of the PCB mainboard and daughter cards, while also taking the system’s thermal requirements and space restrictions into account.
The company is now expanding its portfolio of CoolSiC™ MOSFET discretes 650 V with two new product families housed in the Thin-TOLL 8×8 and TOLT packages. They are based on the CoolSiC Generation 2 (G2) technology, offering significantly improved figures-of-merit, reliability, and ease-of-use. Both product families specifically target high and medium switching-mode power supplies (SMPS), including AI servers, renewable energy, EV chargers, and large home appliances.
The Thin-TOLL package has a form factor of 8×8 mm and offers the best-in-class Thermal Cycling on Board (TCoB) capability on the market. The TOLT package is a top-side cooled (TSC) enclosure with a similar form factor to TOLL. Both package types offer developers several benefits: Using them in AI and server power supply units (PSU), for example, reduces the thickness and length of the daughter cards and allows for a flat heat sink.
When used in microinverters, 5G PSU, TV PSU and SMPS, the Thin-TOLL 8×8 package allows for a minimization of the PCB area occupied by the power supply devices on the mainboard, while TOLT keeps the junction temperature of the devices under control, given that these applications typically use convection cooling. In addition, TOLT devices complete Infineon’s top-side cooled CoolSiC industrial portfolio, namely CoolSiC 750 V in Q-DPAK. They enable developers to reduce the PCB footprint occupied by SiC MOSFETs when the power to be delivered to the devices does not require a Q-DPAK package.
The CoolSiC MOSFETs 650 V G2 in ThinTOLL 8×8 and TOLT are now available in R DS(on) from 20, 40, 50 and 60 mΩ. Additionally, the TOLT variant is also available with an R DS(on) of 15 mΩ. The product family will be expanded by a more granular portfolio by the end of 2024. More information is available at www.infineon.com/coolsic-gen2. Infineon will showcase the CoolSiC MOSFET 650 V Generation 2 at the PCIM in Nuremberg.
Original – Infineon Technologies
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Toshiba Electronic Devices & Storage Corporation has developed a Schottky barrier diode (SBD) embedded metal oxide semiconductor field effect transistor (MOSFET), a significant improvement over the current device structure, while maintaining high reliability and short-circuit ruggedness.
A successful design modification introduces a barrier structure with varying depths in the device structure that maintains the reliability of the reverse conduction operation, the function of an integrated SBD, while suppressing the current leakage from the SBD part that causes destruction during short-circuiting. By making use of new design technology and optimizing the device structure, the new MOSFET achieves lower on-resistance (RonA), with about a 26% improvement over the current structure.
Power semiconductors play a central role in electricity supply and control. They cut energy consumption in all kinds of electronic equipment, and are an important tool for the realization of carbon neutrality. Continued demand expansion is expected from vehicle electrification and the miniaturization of industrial equipment.
Against this background, SiC MOSFETs are seen as next-generation power semiconductors. They deliver better power energy conversion efficiency than Si MOSFETs, and their use has expanded rapidly in recent years. However, SiC MOSFETs have a reliability problem: increased RonA due to reverse conduction operation. Toshiba has now developed an SBD-embedded SiC MOSFET that operates in reverse conduction without increasing RonA.
Reducing the RonA of SiC MOSFET simultaneously causes excess current flow through the MOSFET part during short-circuit operation, reducing the durability of short-circuit operation. However, enhancing the conduction of the embedded SBD to improve the reliability of reverse conduction operation increases its current leakage during short-circuit operation, which also decreases the durability of short-circuit operation.
Introducing a deep barrier structure can suppress both the excess current of the MOSFET and SBD current leakage during short-circuit operation, but it also obstructs current flow from the SBD, raising concerns about decreased reliability in diode conduction.
This led Toshiba to consider a barrier structure divided into shallow and deep areas. The deep barrier area successfully suppresses excess current from the MOSFET part during short-circuit operation, and reduces SBD current leakage, while leaving a shallow area effectively spreads current from the SBD without any obstruction by the barrier.
This improves ruggedness during short-circuit operation while maintaining excellent reliability in reverse conduction operation. Toshiba has provided some customers with test samples of SiC MOSFETs with embedded SBD that apply the new technology since December 2023 for evaluation, toward further enhancing performance.
By making use of its new design technology and optimizing the device structure, Toshiba has developed a prototype 1.2 kV class SBD-integrated MOSFET. This achieves a low RonA of 2.0 mΩcm2, about a 26% improvement over the current structure. Toshiba will present the details of this technology at The 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2024, an international conference on power semiconductors, which is being held in Bremen, Germany from June 2 to 6.
Original – Toshiba
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Infineon Technologies AG announced two new generations of high voltage (HV) and medium voltage (MV) CoolGaN TM devices which now enable customers to use Gallium Nitride (GaN) in voltage classes from 40 V to 700 V in a broader array of applications that help drive digitalization and decarbonization.
These two product families are manufactured on high performance 8-inch in-house foundry processes in Kulim (Malaysia) and Villach (Austria). With this, Infineon expands its CoolGaN advantages and capacity to ensure a robust supply chain in the GaN devices market, which is estimated to grow with an average annual growth rate (CAGR) of 46 percent over the next five years according to Yole Group.
“Today’s announcement builds nicely on our acquisition of GaN Systems last year and brings to market a whole new level of efficiency and performance for our customers,” said Adam White, Division President of Power & Sensor Systems at Infineon. “The new generations of our Infineon CoolGaN family in high and medium voltage demonstrate our product advantages and are manufactured entirely on 8 inch, demonstrating the fast scalability of GaN to larger wafer diameters. I am excited to see all of the disruptive applications our customers unleash with these new generations of GaN.”
The new 650 V G5 family addresses applications in consumer, data center, industrial and solar. These products are the next generation of GIT-based high voltage products from Infineon. The second new family manufactured on the 8-inch process is the medium voltage G3 devices which include CoolGaN Transistor voltage classes 60 V, 80 V, 100 V and 120 V; and 40 V bidirectional switch (BDS) devices. The medium voltage G3 products are targeted at motor drive, telecom, data center, solar and consumer applications.
The CoolGaN 650 V G5 will be available in Q4 2024 and the medium voltage CoolGaN G3 will be available in Q3 2024. Samples are available now.
Original – Infineon Technologies
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In a significant advancement for the high-voltage power electronics industry, Maspower Semiconductor has introduced the MS2N300HGC0 MOSFET, a powerful new component that sets new benchmarks in performance and reliability.
This cutting-edge product, housed in the TO-247 package, offers unprecedented performance with its robust 3000V voltage rating and 2A continuous current capability. What truly sets this MOSFET apart, however, is its rigorous testing and certification. The MS2N300HGC0 has undergone 100% avalanche testing, ensuring exceptional resilience and durability in demanding applications.
Moreover, the MS2N300HGC0’s Fast Intrinsic Diode design and minimized gate charge contribute to its high-speed switching capabilities, making it a perfect fit for high-voltage power supplies, PV inverters, switching applications and more. Its very low intrinsic capacitance further enhance its performance, delivering maximum efficiency and reliability. Maspower’s commitment to innovation and reliability is evident in the MS2N300HGC0, which has been rigorously tested and certified to meet the highest industry standards.
“The MS2N300HGC0 is a testament to our commitment to pushing the boundaries of high-voltage power electronics,” said a spokesperson from Maspower. “We are proud to offer this state-of-the-art MOSFET to our customers, enabling them to achieve unprecedented levels of performance and reliability in their applications.”
Original – Maspower Semiconductor
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With the increasing power requirements of Artificial Intelligence (AI) processors, server power supplies (PSUs) must deliver more and more power without exceeding the defined dimensions of the server racks. This is driven by a surge in energy demand of high-level GPUs, which could consume 2 kW and more per chip by the end of the decade.
These needs, as well as the emergence of increasingly demanding applications and the associated specific customer requirements have prompted Infineon Technologies AG to extend the development of SiC MOSFETs to voltages below 650 V. The company is now launching the new CoolSiC™ MOSFET 400 V family, which is based on the second generation (G2) CoolSiC technology introduced earlier this year.
The new MOSFET portfolio was specially developed for use in the AC/DC stage of AI servers, complementing Infineon’s recently announced PSU roadmap. The devices are also ideal for solar and energy storage systems (ESS), inverter motor control, industrial and auxiliary power supplies (SMPS) as well as solid-state circuit breakers for residential buildings.
“Infineon offers an extensive portfolio of high-performance MOSFETs and GaN transistors to meet the demanding design and space requirements of AI server power supplies”, said Richard Kuncic, Head of the Power Systems Business Line at Infineon. “We are committed to supporting our customers with advanced products such as the CoolSiC MOSFETs 400 V G2 to drive highest energy efficiency in advanced AI applications.”
The new family features ultra-low conduction and switching losses when compared to existing 650 V SiC and Si MOSFETs. Implemented in a multi-level PFC, the AC/DC stage of the AI Server PSU can attain a power density of more than 100 W/in³ and is proven to reach 99.5 percent efficiency.
This is an efficiency improvement of 0.3 percentage points over solutions using 650 V SiC MOSFETs. In addition, the system solution for AI Server PSUs is completed by implementing CoolGaN™ transistors in the DC/DC stage. With this combination of high-performance MOSFETs and transistors, the power supply can deliver more than 8 kW with an increase in power density by a factor of more than 3 compared to current solutions.
The new MOSFET portfolio comprises a total of 10 products: five R DS(on) classes from 11 to 45 mΩ in Kelvin-source TOLL and D²PAK-7 packages with .XT package interconnect technology. The drain-source breakdown voltage of 400 V at T vj = 25°C. makes them ideal for use in 2- and 3-level converters and for synchronous rectification.
The components offer high robustness under harsh switching conditions and are 100 percent avalanche tested. The highly robust CoolSiC technology in combination with the .XT interconnect technology enables the devices to cope with power peaks and transients caused by sudden changes in the power requirements of the AI processor. Both the connection technology and a low and positive R DS(on) temperature coefficient enable excellent performance under operating conditions with higher junction temperatures.
Original – Infineon Technologies
