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To provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay Intertechnology, Inc. introduced its first fourth-generation 600 V E Series power MOSFET in the new PowerPAK® 8 x 8LR package.
Compared to previous-generation devices, the Vishay Siliconix n-channel SiHR080N60E slashes on-resistance by 27 % and resistance times gate charge, a key figure of merit (FOM) for 600 V MOSFETs used in power conversion applications, by 60 % while providing higher current in a smaller footprint than devices in the D²PAK package.
Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high voltage inputs to the low voltage outputs required to power the latest high tech equipment. With the SiHR080N60E and other devices in the fourth-generation 600 V E Series family, the company is addressing the need for efficiency and power density improvements in two of the first stages of the power system architecture — power factor correction (PFC) and subsequent DC/DC converter blocks.
Typical applications will include servers, edge computing, super computers, and data storage; UPS; high intensity discharge (HID) lamps and fluorescent ballast lighting; telecom SMPS; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.
Measuring 10.42 mm by 8 mm by 1.65 mm, the SiHR080N60E’s compact PowerPAK 8 x 8LR package features a 50.8 % smaller footprint than the D²PAK while offering a 66 % lower height. Due to its top-side cooling, the package delivers excellent thermal capability, with an extremely low junction to case (drain) thermal resistance of 0.25 °C/W.
This allows for 46 % higher current than the D²PAK at the same on-resistance level, enabling dramatically higher power density. In addition, the package’s gullwing leads provide excellent temperature cycle capability.
Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHR080N60E features low typical on-resistance of 0.074 Ω at 10 V and ultra low gate charge down to 42 nC. The resulting FOM is an industry-low 3.1 Ω*nC, which translates into reduced conduction and switching losses to save energy and increase efficiency in power systems > 2 kW.
For improved switching performance in hard-switched topologies such as PFC, half-bridge, and two-switch forward designs, the MOSFET released today provides low typical effective output capacitances Co(er) and Co(tr) of 79 pF and 499 pF, respectively. The package also provides a Kelvin connection for improved switching efficiency.
The device is RoHS-compliant and halogen-free, and it is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 % UIS testing.
Original – Vishay Intertechnology
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Magnachip Semiconductor Corporation announced the release of its new 40V MXT MV MOSFET. With this latest addition, the Company now offers 13 MOSFET and IGBT products for a wide range of automotive applications.
As the automotive industry adopts advanced technologies such as autonomous driving and enhanced infotainment systems, the demand for high-efficiency power solutions increases. According to Omdia, a global market research firm, the automotive power discrete market is projected to grow 14% annually from 2024 to 2027.
Magnachip entered the automotive sector in April 2022 with its first 40V MOSFET and has since broadened its product offerings by releasing 30V, -40V (P-channel MOSFET), 60V, and 250V MOSFETs for vehicles. In September 2023, the Company introduced 650V and 1200V IGBTs for positive temperature coefficient heaters and e-compressors for automotive. In the last two years, Magnachip’s power products have been integrated into vehicles of major automotive manufacturers in the United States, Korea, Japan and China.
Leveraging its technological capabilities, Magnachip now unveils this 40V MXT MV MOSFET (AMDD040N055RH) in the Decawatt Package (DPAK). The new MOSFET offers exceptional versatility for various automotive applications, such as motor control systems or power seat modules and electric stability control systems for reverse battery protection.
“Magnachip is committed to supplying premium products that meet the evolving demands of the automotive sector,” said YJ Kim, CEO of Magnachip. “Our technical innovation, coupled with a steady supply and a comprehensive range of product offerings, will strengthen our foothold in the automotive industry and broaden our global market presence.”
Original – Magnachip Semiconductor
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Toshiba Electronic Devices & Storage Corporation has launched a newly developed press pack IEGT “ST1000GXH35” with ratings of 4500 V/1000 A for use in high-voltage converters such as DC power transmission systems and industrial motor controllers.
The new product ST1000GXH35 employs trench-type IEGT chips and high-speed diode chips. The IEGT chips reduce collector-emitter saturation-voltage and improve shutdown tolerance, short-circuit tolerance, and high-temperature tolerance. Therefore, collector-emitter saturation-voltage (VCE(sat) ) has been reduced by approximately 28 % from 3.00 V to 2.15 V (typical) compared with the existing product ST750GXH24.
The high-speed diode chips suppress voltage oscillation during reverse recovery and improve reverse recovery tolerance and high-temperature tolerance. The new product can be used at a higher turn-on speed than the existing product, therefore the turn-on switching loss (Eon) has been reduced by approximately 34 % from 4.15 J to 2.75 J (typical).
Furthermore, the test voltage for shutdown tests and short-circuit tests has been enhanced to 3400 V in response to applications requiring high voltage. In addition, the junction temperature rating has been increased from 125 °C to 150 °C (maximum) by improving the high-temperature tolerance of the diode.
ST1000GXH35 contributes to size reduction and high output for high-voltage converters such as DC power transmissions, static VAR compensators, and industrial motor controllers.
Applications
- DC power transmissions
- Static VAR compensators
- Industrial motor controllers
Features
- Low collector-emitter saturation voltage and low turn-on switching loss
- Enhanced to test-voltage 3400 V for shutdown and short-circuit tests
- Maximum junction temperature rating: Tj(max)=150 °C
Original – Toshiba
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STMicroelectronics unveiled L99H92 automotive gate driver which provides an SPI port for programming and diagnostics, a charge pump, protective features, and two additional current-sense amplifiers for system monitoring.
Containing two high-side and two low-side drivers, the L99H92 can control a single H-bridge powering one bidirectional DC motor or two half bridges for two unidirectional motors. Typical applications for the highly integrated and easily configurable driver include electric sunroof, window lift, powered trunk, sliding doors, and seat-belt pre-tensioners.
The charge pump powers the high-side drivers to maintain correct operation as the vehicle battery voltage fluctuates, enabling the outputs to function with a supply as low as 5.41V. The charge-pump output is also available at an external pin to control a MOSFET for reverse-battery protection.
The gate-driving current is programmed through the SPI port, allowing slew-rate control to minimize electromagnetic emissions and thermal dissipation. Programming the current saves up to four external discrete components per MOSFET, typically needed for slew-rate setting with conventional drivers. The maximum drive current of 170mA gives designers flexibility to use the driver with a wide variety of external MOSFETs, including high-power devices with large gate capacitance.
With many features for system protection and diagnostics, the L99H92 is built for reliability and safety. There is overcurrent protection with a programmable threshold, detected by monitoring the MOSFET drain current. Also, cross-conduction protection with programmable dead time ensures safety and efficiency. Additional protection includes overtemperature early warning and shutdown, overvoltage and undervoltage protection on analog and digital power supply inputs, and open-load and output short-circuit detection in off-state diagnostic mode.
A fail-safe input can turn off all MOSFETs instantaneously and a dedicated diagnostic pin provides immediate fault warning without waiting for periodic SPI transfers.
Additionally, two current-sense amplifiers are integrated for system-status monitoring, helping minimize the bill of materials. Suitable for high-side, low-side, and inline sensing, the amplifiers have independently programmable gain, low offset, and low thermal drift. They can be independently disabled to reduce current consumption when unused.
Original – STMicroelectronics
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MCC Semi introduced new high-performance 40V N-channel MOSFETs. These components leverage split-gate trench (SGT) technology and full AEC-Q101 qualification in compact packages.
Both MCU2D8N04YHQ and MCB2D8N04YHQ also boast low on-resistance of only 2.8mΩ, ensuring efficient power management in a diverse range of automotive systems.
These versatile MOSFETs in high-demand DPAK and D2PAK packages ensure a seamless upgrade path with minimal changes for integration within existing designs. Adding to their unquestionable performance in harsh conditions, these components have a high operating junction temperature of up to 175°C.
Whether it’s a battery management system or electric water pump, these new MOSFETs are up for delivering the ultimate in reliability for challenging automotive applications.
Features & Benefits:
- Fully AEC-Q101 qualified
- Split-gate trench (SGT) technology
- Low RDS(on)
- High power density package
- High junction temperature up to 175℃
- Available in compact DPAK and D2PAK packages
Original – Micro Commercial Components
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Toshiba Electronic Devices & Storage Corporation has launched two 150 V N-channel power MOSFET products that use the new generation process “U-MOSX-H series” and are suitable for switching power supplies for industrial equipment—used for such as data centers and communication base stations—and has expanded the lineup. The new products use the surface mount type SOP Advance(N) package and their drain-source On-resistance (max) is 11.1 mΩ for “TPH1100CQ5” and 14.1 mΩ for “TPH1400CQ5.”
The new products TPH1100CQ5 and TPH1400CQ5 have improved the reverse recovery characteristics that are critical in synchronous rectification applications. In the case of TPH1400CQ5, the reverse recovery charge is reduced by approximately 73 % and the reverse recovery time is approximately 45 % faster compared with Toshiba’s existing TPH1400CQH.
Used in synchronous rectification applications, TPH1400CQ5 reduces the power loss of switching power supplies and helps improve efficiency. The new products reduce the drain source spike voltage generated between the drain and source when MOSFET is switched, helping to lower EMI in switching power supplies.
Toshiba will expand its lineup of products and help to reduce power consumption for equipment.
Applications
- Switching power supplies (high efficiency AC-DC converters, high efficiency DC-DC converters, etc.)
- Motor control equipment (motor drives, etc.)
Features
- Low reverse recovery charge:
TPH1100CQ5 Qrr=32 nC (typ.) (-dIDR/dt=100 A/μs)
TPH1400CQ5 Qrr=27 nC (typ.) (-dIDR/dt=100 A/μs) - Fast reverse recovery time:
TPH1100CQ5 trr=38 ns (typ.) (-dIDR/dt=100 A/μs)
TPH1400CQ5 trr=36 ns (typ.) (-dIDR/dt=100 A/μs) - High channel temperature rating: Tch (max)=175 °C
Original – Toshiba
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The aviation industry’s requirements for the latest, most efficient and lowest-emission aircraft is propelled by an overarching goal towards sustainability and decarbonization. To satisfy these goals, aviation power systems developers are transitioning to electric actuation systems as the trend towards More Electric Aircraft (MEA) continues to grow.
To provide the aviation industry with a comprehensive electric actuation solution, Microchip Technology announced a new integrated actuation power solution that combines companion gate driver boards with the expansive Hybrid Power Drive (HPD) modules in silicon carbide or silicon technology with a power range of 5 kVA to 20 kVA.
The new integrated actuation power solution maintains the same footprint regardless of the power output. The companion gate driver boards are designed to be integrated with Microchip’s HPD modules to provide an all-in-one motor drive solution for the electrification of systems such as flight controls, braking and landing gear. Microchip’s power solutions are designed to scale based on the requirements of the end application, from smaller actuation systems for drones to high-power actuation systems for Electric Vertical Take-Off and Landing (eVTOL) aircraft, MEA and all-electric aircraft.
“We developed the companion gate driver boards to be used with our existing HPD modules to bring to market a plug-and-play power solution for MEA,” said Leon Gross, vice president of Microchip’s discrete product group. “With this solution, customers no longer need to design and develop their own drive circuitry, which can reduce design time, resources and cost.”
These high-reliability devices are tested to conditions outlined in DO-160, “Environmental Conditions and Test Procedures for Airborne Equipment.” There are multiple protection features including shoot-through detection, short circuit protection, desaturation protection, Under Voltage Lock Out (UVLO) and active miller clamping.
The gate driver boards are designed to be driven with external PWM signals based on Low Voltage Differential Signaling (LVDS) compliant with TIA/EIA-644 for low Electromagnetic Interference (EMI) and good noise immunity. The gate driver board provides differential outputs for telemetry signals like DC bus current, phase current and solenoid current by taking feedback from shunts present in the HPD module and DC bus voltage. It also provides direct output of two PT1000 temperature sensors available in the HPD power module.
The companion gate driver boards are low-weight, low-profile and compact solutions to optimize size and power efficiency of actuation systems. The gate drivers are designed to operate throughout the temperature range of −55°C to +110°C, which is critical for aviation applications that are often exposed to harsh environments.
The isolated companion gate driver boards only require a single 15V DC input for the control and drive circuit; additional voltages needed can be generated on the card. This significantly reduces the number of system components and simplifies system cabling.
Microchip provides comprehensive solutions for MEA by integrating power products with FPGAs, microcontrollers, security, memory and timing. Microchip’s solutions are designed to help customers speed up their development, reduce costs and get to market faster.
Original – Microchip Technology
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Toshiba Electronic Devices & Storage Corporation has launched a press pack IEGT “ST1500GXH35A” with ratings of 4500 V/1500 A that employs newly developed trench-type IEGT chips for use in high-voltage converters such as DC power transmission systems and industrial motor controllers.
The newly developed IEGT chips reduce collector-emitter saturation-voltage and improve shutdown tolerance, short-circuit tolerance and high-temperature tolerance.
Therefore, compared with the existing product, the collector-emitter saturation voltage (VCE(sat)) of the new ST1500GXH35A has been reduced by approximately 26 % from 3.4 V to 2.5 V (typical). In addition, the new product features wide RBSOA by improving shutdown tolerance, and tests short-circuit tolerance at a measurement voltage of 3400 V.
Furthermore, the junction temperature rating (Tj) has been increased from 125 °C to 150 °C (maximum) by improving the high-temperature tolerance of the diode.
ST1500GXH35A helps to reduce the size and power consumption for high-voltage converters such as DC power transmissions, static VAR compensators, and industrial motor controllers.
Applications
- DC power transmissions
- Static VAR compensators
- Industrial motor controllers
Features
- Low-collector-emitter saturation: VCE(sat)=2.6 V (typ.) (VGE=15 V, IC=1500 A, Tj=150 °C)
- Expanded RBSOA (reinforced for 3400 V of test voltage), tested short-circuit tolerance
- Maximum junction temperature rating: Tj (max)=150 °C
Original – Toshiba
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MCC Semi expands its automotive MOSFET portfolio with the addition of four side-wettable flank components. Available in N-channel and P-channel options, these products deliver high power density in a compact DFN3333 package.
Full AEC-Q101 qualification is just one way these MOSFETs ensure quality and reliability. Side-wettable flanks enable more reliable soldering during PCB assembly and allow manufacturers to perform automated optical inspections (AOI) to reduce costs while maintaining quality assurance.
The P-channel MOSFETs MCGWF20P06YHE3 and MCGWF45P04HE3 leverage trench low-voltage (LV) technology and feature RDS(on) from 13mΩ to 26mΩ. And the N-channel solutions MCGWF60N04YHE3 and MCGWF60N06YHE3 utilize split-gate trench technology with RDS(on) from 3.9mΩ to 6mΩ.
No matter which side-wettable flank MOSFET you choose, you can take advantage of versatility and performance for a diverse array of automotive electronic systems.
Features & Benefits:
- AEC-Q101 qualified
- P-channel powered by trench low voltage (LV) technology
- N-channel powered by split-gate trench (SGT) technology
- Low RDS(on)
- Side-wettable flanks ensure soldering stability
- Automated optical inspection capability for cost-effective production
- Compact yet high power density DFN3333 package
Original – Micro Commercial Components
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Teledyne e2v HiRel Electronics announced the release of the TDGM650LS60, the first product in its innovative new 650V power module family. This new module utilizes a Teledyne high voltage Gallium Nitride (GaN) transistor and integrates an isolated driver in one package.
Designed to serve as a load switch or solid-state switch, the TDGM650LS60 offers unparalleled performance and versatility. With the driver providing 5KV isolation and a GaN transistor boasting a minimum breakdown voltage of 650V, this module ensures robust and dependable operation in diverse environments.
One of the standout features of the TDGM650LS60 is its lightning-fast switching time coupled with the absence of moving parts. This unique combination not only enhances operational efficiency but also significantly elevates the reliability of the device. As a result, the TDGM650LS60 is ideally suited for high-reliability applications, including but not limited to Space, Avionics, and Military sectors.
“This launch marks a significant milestone in Teledyne’s commitment to innovation” said Mont Taylor, Vice President and Business Development Manager at Teledyne e2v HiRel. “The TDGM650LS60 represents the culmination of our dedication to pushing the boundaries of technology, offering our customers performance, reliability, and versatility in their applications.”
Original – Teledyne e2v HiRel Electronics
