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Toshiba Electronic Devices & Storage Corporation has launched a press pack IEGT “ST1500GXH35A” with ratings of 4500 V/1500 A that employs newly developed trench-type IEGT chips for use in high-voltage converters such as DC power transmission systems and industrial motor controllers.
The newly developed IEGT chips reduce collector-emitter saturation-voltage and improve shutdown tolerance, short-circuit tolerance and high-temperature tolerance.
Therefore, compared with the existing product, the collector-emitter saturation voltage (VCE(sat)) of the new ST1500GXH35A has been reduced by approximately 26 % from 3.4 V to 2.5 V (typical). In addition, the new product features wide RBSOA by improving shutdown tolerance, and tests short-circuit tolerance at a measurement voltage of 3400 V.
Furthermore, the junction temperature rating (Tj) has been increased from 125 °C to 150 °C (maximum) by improving the high-temperature tolerance of the diode.
ST1500GXH35A helps to reduce the size and power consumption for high-voltage converters such as DC power transmissions, static VAR compensators, and industrial motor controllers.
Applications
- DC power transmissions
- Static VAR compensators
- Industrial motor controllers
Features
- Low-collector-emitter saturation: VCE(sat)=2.6 V (typ.) (VGE=15 V, IC=1500 A, Tj=150 °C)
- Expanded RBSOA (reinforced for 3400 V of test voltage), tested short-circuit tolerance
- Maximum junction temperature rating: Tj (max)=150 °C
Original – Toshiba
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MCC Semi expands its automotive MOSFET portfolio with the addition of four side-wettable flank components. Available in N-channel and P-channel options, these products deliver high power density in a compact DFN3333 package.
Full AEC-Q101 qualification is just one way these MOSFETs ensure quality and reliability. Side-wettable flanks enable more reliable soldering during PCB assembly and allow manufacturers to perform automated optical inspections (AOI) to reduce costs while maintaining quality assurance.
The P-channel MOSFETs MCGWF20P06YHE3 and MCGWF45P04HE3 leverage trench low-voltage (LV) technology and feature RDS(on) from 13mΩ to 26mΩ. And the N-channel solutions MCGWF60N04YHE3 and MCGWF60N06YHE3 utilize split-gate trench technology with RDS(on) from 3.9mΩ to 6mΩ.
No matter which side-wettable flank MOSFET you choose, you can take advantage of versatility and performance for a diverse array of automotive electronic systems.
Features & Benefits:
- AEC-Q101 qualified
- P-channel powered by trench low voltage (LV) technology
- N-channel powered by split-gate trench (SGT) technology
- Low RDS(on)
- Side-wettable flanks ensure soldering stability
- Automated optical inspection capability for cost-effective production
- Compact yet high power density DFN3333 package
Original – Micro Commercial Components
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Teledyne e2v HiRel Electronics announced the release of the TDGM650LS60, the first product in its innovative new 650V power module family. This new module utilizes a Teledyne high voltage Gallium Nitride (GaN) transistor and integrates an isolated driver in one package.
Designed to serve as a load switch or solid-state switch, the TDGM650LS60 offers unparalleled performance and versatility. With the driver providing 5KV isolation and a GaN transistor boasting a minimum breakdown voltage of 650V, this module ensures robust and dependable operation in diverse environments.
One of the standout features of the TDGM650LS60 is its lightning-fast switching time coupled with the absence of moving parts. This unique combination not only enhances operational efficiency but also significantly elevates the reliability of the device. As a result, the TDGM650LS60 is ideally suited for high-reliability applications, including but not limited to Space, Avionics, and Military sectors.
“This launch marks a significant milestone in Teledyne’s commitment to innovation” said Mont Taylor, Vice President and Business Development Manager at Teledyne e2v HiRel. “The TDGM650LS60 represents the culmination of our dedication to pushing the boundaries of technology, offering our customers performance, reliability, and versatility in their applications.”
Original – Teledyne e2v HiRel Electronics
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Novel Crystal Technology (NCT), a global leader in Gallium Oxide (Ga2O3) technology, has successfully grown the first 6-inch Ga2O3 single crystal using the advanced Vertical Bridgman (VB) technique. This achievement marks a significant step forward in NCT’s efforts to deliver larger, high-quality semiconductor wafers for Ga2O3-based power devices.
The VB technique offers several advantages over NCT’s existing Edge-defined Film-fed Growth (EFG) method. By growing the crystal in a cylindrical shape, VB significantly reduces costs associated with substrate cutting. Additionally, it allows for production of substrates in various crystalline orientations, unrestricted by limitations imposed by crystal anisotropy.
Furthermore, the controlled thermal environment of VB growth leads to superior crystal quality with minimal defects, compared to EFG. Finally, dopant uniformity within the substrate is expected to improve, aligning with industry standards for other semiconductors like silicon.
NCT carried out a comparative evaluation between VB and EFG crystals with National Institute of Advanced Industrial Science and Technology (AIST) revealed a dramatic improvement in crystal quality. Synchrotron radiation X-ray topography analysis confirmed minimal defects in the VB-grown crystal, compared to the high density of defects observed in the EFG-grown crystal. This clearly demonstrates the superiority of the VB technique for producing high-quality Ga2O3 substrates.
Ga2O3 is a promising material for power electronics due to its ability to significantly reduce power loss compared to commonly used Silicon Carbide (SiC) in high-voltage applications, like electric vehicles and renewable energy systems. Its wide bandgap characteristics hold immense potential for energy conservation and CO2 emission reduction.
Established in 2015, NCT manufactures 2-inch and 100 mm gallium oxide (Ga2O3) substrates and epi-wafers for power devices. These are commercially available and used by universities, institutes, and power device companies worldwide. NCT currently supplies thousands of these substrates annually to support research and development efforts.
NCT is actively developing larger substrates such as 6-inch. Beyond substrates, NCT has a vision for broader Ga2O3 device production. They are already offering samples of their first Ga2O3 Schottky Barrier Diode, with qualification tests expected to be completed in September 2024.
The development of the Vertical Bridgman growth technique for Ga2O3 single crystals was initiated by Shinshu University, successfully achieving growth of 2-inch and 4-inch crystals. NCT acquired and extended their techniques to enable larger diameter crystal development. This research and development program was partially funded by the Adaptable and Seamless Technology Transfer Program through Target Driven R&D (A-STEP) of the Japan Science and Technology Agency (JST).
Original – Novel Crystal Technology
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Infineon Technologies AG introduced the first product in its new advanced power MOSFET technology OptiMOS™ 7 80 V. The IAUCN08S7N013 features a significantly increased power density and is available in the versatile, robust, and high-current SSO8 5 x 6 mm² SMD package.
The OptiMOS™ 7 80 V offering is a perfect match for the upcoming 48 V board net applications. It is designed specifically for the high performance, high quality and robustness needed for demanding automotive applications like automotive DC-DC converters in EVs, 48 V motor control, for instance electric power steering (EPS), 48 V battery switches and electric two- and three-wheelers.
Compared to the previous generation, the R DS(on) of the Infineon IAUCN08S7N013 has been reduced by more than 50 percent, and is now the best R DS(on) in the industry with a maximum of 1.3 mΩ. Users benefit from minimized conduction losses, superior switching performance and the highest power density in a 5 x 6 mm² package.
In addition, the IAUCN08S7N013 also features low package resistance and inductance, as well as a high avalanche current capability. For automotive applications, it has an extended qualification that goes beyond AEC-Q101.
The IAUCN08S7N013 is in mass-production and available now. More information is available at www.infineon.com/iaucn08s7n013/.
Original – Infineon Technologies
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Vishay Intertechnology, Inc. introduced two new FRED Pt® 500 A Ultrafast soft recovery diode modules in the new TO-244 Gen III package. Offering higher reliability than previous-generation solutions, the Vishay Semiconductors VS-VSUD505CW60 and VS-VSUD510CW60 are designed to reduce losses and EMI / RFI in high frequency power conditioning systems.
The rugged TO-244 package of the diode modules released today withstands 46 000 IOL cycles at given conditions, offering an improved life expectancy over previous-generation devices. In addition, the industry-standard package is footprint-compatible with competing solutions in the TO-244 to provide a drop-in replacement for existing designs.
The VSUD505CW60 and VS-VSUD510CW60 are ideally suited for high frequency welding; high current converters and ballast water management systems (BWMS) in railway equipment, cranes, and ships; UPS; and other applications where switching losses comprise a significant portion of the total losses. In these applications, the softness of their recovery eliminates the need for a snubber, reducing component counts and lowering costs.
Offered in a common cathode configuration, the diode modules provide low forward voltage drop down to 0.82 V, thermal resistance — junction to case — of 0.16 °C/W, and an operating temperature range up to +175 °C.
Device Specification Table:
Part number VS-VSUD505CW60 VS-VSUD510CW60 VR (V) 600 IF(AV) (A) 500 Qrr typical (nC) 460 1770 trr (ns) 178 270 VFM @ 250 A, +175 °C (V) 0.95 0.82 RthJC per diode (°C/W) 0.160 Package TO-244 Samples and production quantities of the new FRED Pt® soft recovery diode modules are available now, with lead times of 26 weeks.
Original – Vishay Intertechnology
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STMicroelectronics introduced 100V trench Schottky rectifier diodes that boost efficiency in power converters operated at high switching frequencies.
Raising power-converter operating frequency, encouraged by the minimal switching losses of technologies like wide-bandgap semiconductors, allows designers to set new benchmarks in power density. However, at elevated frequencies, the energy losses in conventional planar diodes, including silicon Schottky devices, used as rectifiers become a significant factor limiting conversion efficiency.
ST’s trench Schottky diodes significantly reduce the rectifier losses, with superior forward-voltage and reverse-recovery characteristics that enable increased power density with high efficiency. The forward voltage is 50-100mV better than in comparable planar diodes, depending on current and temperature conditions. Simply changing to these devices can increase the efficiency by 0.5%.
There are 28 variants in the new family, with eight current ratings from 1A to 15A, multiple surface-mount packages, in industrial and automotive grades. The industrial-grade parts target applications such as miniature switched-mode power supplies and auxiliary power supplies for telecom, server, and smart-metering equipment.
In automotive, typical uses include space-constrained applications such as LED lighting, reverse-polarity protection, and low-voltage DC/DC converters. The parts are AEC-Q101 qualified, manufactured in PPAP-capable facilities, and specified from -40°C to 175°C.
When combined with ST’s flyback and buck-boost converters, such as the VIPer controllers and HVLED001A offline LED driver, the 100V trench Schottky rectifiers fulfil the active-components bill of materials for switched-mode power supplies. All are supported in ST’s eDesign Suite Rectifier Diodes Simulator, which helps to select the rating and footprint, simulate waveforms, and estimate power efficiency.
The diodes are 100% avalanche tested in production to ensure device robustness and system reliability. They are available in DPAK as well as SOD123 Flat, SOD128 Flat, SMB Flat, and PSMC (TO227A) surface-mount packages.
Original – STMicroelectronics
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Infineon Technologies AG introduced the SSO10T TSC package with OptiMOS™ MOSFET technology. With its direct top-side cooling concept, the package offers excellent thermal performance. This eliminates heat transfer into or through the PCB of the automotive electronic control unit.
The package enables a simple and compact double-sided PCB design and minimizes cooling requirements and system costs for future automotive power designs. The SSO10T TSC is therefore well suited for applications such as electric power steering (EPS), EMB, power distribution, brushless DC drives (BLDC), safety switches, reverse battery, and DCDC converters.
The SSO10T TSC has a 5 x 7 mm² footprint and is based on the established industry standard SSO8, a 5 x 6 mm² robust housing. However, due to its top-side cooling, the SSO10 TSC offers more than 20 percent and up to 50 percent higher performance than the standard SSO8 – depending on the thermal interface (TIM) material used and the TIM thickness. The SSO10T TSC package is JEDEC listed for open market and provides wide second source compatibility. As a result, the package can be introduced quickly and easily as the future standard for top-side cooling.
The SSO10T package enables a very compact PCB design and reduces the system footprint. It also lowers the cost of the cooling design by eliminating vias, resulting in lower overall system costs and design effort. At the same time, the housing offers high power density and efficiency, thus supporting the development of future-proof and sustainable vehicles.
Original – Infineon Technologies
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Alpha and Omega Semiconductor Limited announced its AONZ66412 XSPairFET™ MOSFET designed for Buck-Boost converters in USB PD 3.1 Extended Power Range (EPR) applications. The USB PD 3.1 EPR increases the USB-C maximum power up to 240W. AONZ66412 is defined to support the most commonly addressed power range of up to 140W at 28V, with two 40V N-Channel MOSFETs in a half-bridge configuration in a symmetric XSPairFET™ 5mmx6mm package.
The AONZ66412 can replace two single DFN5x6 MOSFETs, reducing the PCB area and simplifying the layout of the 4-switch buck-boost architecture while enabling a higher efficiency design. These benefits make the AONZ66412 ideal for buck-boost converters in Type-C USB 3.1 EPR applications, including notebook, USB hub, and power bank designs. The AONZ66412 is an extension to the AOS XSPairFET™ lineup that features the latest bottom source packaging technology and lower parasitic inductance for reduced switch node ringing.
Engineered with integrated high-side and low-side MOSFETs (3.8mOhms maximum on-resistance for each FET) within a DFN5x6 symmetric XSPairFET™ package, the low-side MOSFET source of the AONZ66412 is connected directly to a large paddle on the lead frame. This allows for improved thermals, as this paddle can be directly connected to the ground plane on the PCB. The improved package parasitics make 1MHz operation achievable, allowing inductor size and height to be reduced. AONZ66412 has been tested to achieve 97% efficiency @1MHz in typical USB PD 3.1 EPR conditions of 28V input, 17.6V output, and 8A load conditions.
“AOS specifically designed the AONZ66412 to meet EPR Type C PD application demands. AONZ66412 will reduce board space and improve power density to achieve the high-efficiency performance goals designers have set for this widely adopted USB-PD Type C application. AOS continues to be a leading innovator of buck-boost architecture solutions,” said Rack Tsai, Marketing Director of MOSFET product line at AOS.
Original – Alpha and Omega Semiconductor
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Heraeus is making a multi-million-euro investment in Compound Semiconductor (Xiamen) Technology Co. (CSMH), a China-headquartered material supplier of premium industrial diamond. This strategic partnership aims to drive innovations in the semiconductor industry by leveraging diamond’s unique thermal conductivity and electrical insulation properties.
Heraeus signed an investment agreement with CSMH and the deal is expected to close in several weeks. As part of the agreement, Heraeus will hold a stake in the company and receive a seat on the board of directors.
Single-crystal diamond is ultra-wideband gap (UWBG) semiconductor material with the highest known thermal conductivity, surpassing existing thermal solutions such as copper by several times. Typical silicon has a thermal conductivity around 140 W/(m-K), copper is about 400 W/(m-K), and diamond has a much higher thermal conductivity up to 2200 W/(m-K). This allows heat to be dissipated more efficiently, enabling high-performance components to endure with maximum efficiency.
In addition to its superior heat dissipation properties, diamond also withstands extremely high voltages without causing an electric breakdown. This is critical for advancing miniaturization, efficiency, and robustness in power electronics.
“This investment reinforces Heraeus’ commitment to cutting-edge material start-ups and emphasizes its strategic focus on the semiconductor market. With CSMH’s outstanding diamond wafer technologies, we expect to set new standards to accelerate AI and cloud computing, as well as revolutionize inverter architecture for EVs,” said Dr. Steffen Metzger, member of the Heraeus Executive Board.
CSMH’s core business includes the production of polycrystalline and large-sized monocrystalline diamonds, which are particularly important for high-end applications in the semiconductor industry. With already 40 patents – consisting of 23 invention patents and 17 utility models – the company has successfully established itself as an innovator and technical specialist.
“We are very excited to partner with a global industry leader like Heraeus to realize our vision to be the world’s advanced compound semiconductor material provider. Being coined as ‘the ultimate semiconductor’, diamond has many excellent performance parameters such as high pressure resistance, large radio frequency, and high-temperature resistance,” noted Zhang Xing, CEO of CSMH. “The expertise that Heraeus has in global market resources, technology insights, and industrial-scale production of advanced materials will empower CSMH to promote diamond for more applications in the near future.”
Due to its exceptional physical and chemical properties, diamond’s other prominent application includes quantum sensors, optics/detection and high-power lasers, among others. CSMH’s target customers include major players in aerospace, power electronics, optical communication, Artificial Intelligence, photovoltaics, electric vehicles, and sensors.
Industrial diamonds can be produced in a matter of weeks, at a lower cost and with greater environmental friendliness. The cooperation with CSMH aligns with Heraeus’ vision of co-developing next-generation semiconductor solutions and preparing them for use. The combination of CSMH’s specialized expertise in diamond materials and Heraeus’ global market access promises a successful expansion into international markets.
Original – Heraeus
