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GaN / LATEST NEWS / PRODUCT & TECHNOLOGY / WBG2 Min Read
EPC announces the availability of the EPC9193, a 3-phase BLDC motor drive inverter using the EPC2619 eGaN® FET. The EPC9193 operates with a wide input DC voltage ranging from 14 V and 65 V and has two configurations – a standard unit and a high current version:
- The EPC9193 standard reference design uses a single FET for each switch position and can deliver up to 30 ARMS maximum output current.
- A high current configuration version of the reference design, the EPC9193HC, uses two paralleled FETs per switch position with the ability to deliver up to 60 Apk (42 ARMS) maximum output current.
Both versions of the EPC9193 contain all the necessary critical function circuits to support a complete motor drive inverter including gate drivers, regulated auxiliary power rails for housekeeping supplies, voltage, and temperature sense, accurate current sense, and protection functions. The EPC9193 boards measure just 130 mm x 100 mm (including connector).
Major benefits of a GaN-based motor drive are exhibited with these reference design boards, including lower distortion for lower acoustic noise, lower current ripple for reduced magnetic loss, and lower torque ripple for improved precision. The extremely small size of this inverter allows integration into the motor housing resulting in the lowest EMI, highest density, and lowest weight.
EPC provides full demonstration kits, which include interface boards that connect the inverter board to the controller board development tool for fast prototyping that reduce design cycle times.
“GaN-based inverters enhance motor efficiency and lower costs, expensive silicon MOSFET inverters”, said Alex Lidow, CEO of EPC. “This results in smaller, lighter, quieter motors with increased torque, range, and precision.”
Original – Efficient Power Conversion
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GaN / LATEST NEWS / PRODUCT & TECHNOLOGY / WBG3 Min Read
Teledyne e2v HiRel announced the availability of radiation tolerant RF and Power products for the evolving New Space market. Qualified based on the EEE-INST-002 space grade standard, these plastic packaged products are qualified for the harsh environment of space with –55°C to +125°C temperature operating ratings, and are radiation tolerant for use in LEO, MEO, and GEO missions.
The RF products include several low noise amplifiers (LNA) and are ideal for demanding high-reliability space applications where low noise figure, minimal power consumption, and small footprint are critical to mission success. They are ideally suited for satellite communication systems that are increasing the power of radio signals so utilizing components with minimal noise and distortion help minimizing the degradation of digital signals.
These LNAs are developed in the radiation tolerant pHEMT technology semiconductor process technology. The monolithic microwave integrated circuit (MMIC) products are available in dual-flat no lead (DFN) plastic over molded SMT packages and are biased over single positive VDD supply voltages, eliminating the need for negative power rail voltages.
- The TDLNA002093SEP delivers a low noise figure of less than 0.37 dB, IDDQ from 30 mA to 100mA, and exceptional performance from 1 GHz (L-band) to 6 GHz (S-band) frequencies.
- The TDLNA0430SEP delivers an industry leading low noise figure of less than 0.35 dB, IDDQ of 60mA and exceptional performance from 0.3 GHz (UHF) to 3 GHz (S-band) frequencies.
- The TDLNA2050SEP delivers an industry leading low noise figure of less than 0.4 dB, IDDQ of 60mA and exceptional performance from 2.0 GHz (S-band) to 5 GHz (C-band) frequencies.
The Power products offerings include Gallium Nitride (GaN) technology High Electron Mobility Transistors up to 650V, currents up to 90 Amp, high switching frequencies, and low RDSON. These GaN solutions have easy gate-drive requirements and enable high power density designs with four times less space requirements than traditional MOSFETs. The TDG650E60xSP parts are available in extremely small non hermetic packages with either top-side and bottom-side thermal pads and are ideally suited for satellite power supply systems with space production screening.
“Today we’re announcing our New Space products offering of RF and Power products optimized for space applications,” said Mont Taylor, Vice President and Business Development Manager at Teledyne e2v HiRel. “These LNAs with their ultra low noise figures coupled with the high power density capabilities of GaN transistors, we believe these products will enable system designers with superior solutions for space based satellite communication applications.”Original – Teledyne e2v HiRel
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MCC Semi unveiled the latest innovation tailored specifically for the demanding automotive industry. Powered by 100V, MCU62N10YHE3 is the N-channel MOSFET that packs superior performance and handling into a small DPAK package.
Precision and efficiency come standard in this power MOSFET solution that features split-gate trench technology and RDS(on) of only 11mΩ. Made to withstand harsh automotive environments, this AEC-Q101 qualified component can handle 62A current capability and operating junction temps up to 175⁰C.
The ultra-compact package and ideal handling make this new MOSFET an effective solution for more than just the automotive sector. Engineers can rely on its powerful capabilities for consumer, industrial, and renewable energy applications.
Features & Benefits:
- AEC-Q101 qualification drives confidence
- Split-gate trench (SGT) technology enhances performance
- RDS(on) of only 11mΩ boosts efficiency
- 62A current capability ensures performance
- Compact DPAK package saves space and money
- Junction temperature up to 175℃ for reliability in harsh conditions
Original – Micro Commercial Components
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Micro Commercial Components introduced the latest auto-grade N-channel power MOSFETs with up to 2.5mΩ on-resistance: MCACL220N06YHE3, MCACL2D5N06YL, MCACL280N04YHE3, and MCACL330N04YHE3.
Optimized for high current output, these powerful components boast RDS(on) as low as 0.8mΩ in a sleek, engineer-friendly DFN5060 package. You can enhance power management and ramp up efficiency with minimal losses and the confidence that come along with AEC-Q101 qualification and the MCC name.
With high power density, MCC’s new 40V and 60V MOSFETs are designed to handle harsh conditions and operating junction temps up to 175℃ with ease, making them ideal for diverse automotive and industrial applications — from battery management systems and electric power steering to lighting controls, water pumps, and solar power systems.
Features & Benefits:
- AEC-Q101 qualified for reliability
- Advanced split-gate trench (SGT) technology
- Excellent thermal performance & efficiency
- Low RDS(on) minimizes power losses
- High power density packagey
- High junction temperature up to 175℃
- Compact DFN5060 package saves space and material costs
Original – Micro Commercial Components
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LATEST NEWS / PRODUCT & TECHNOLOGY / Si2 Min Read
Motor drive applications are taking a leap forward with the launch of the Infineon Technologies AG OptiMOS™ 6 200 V MOSFET product family. The new portfolio is designed to deliver optimal performance in applications such as e-scooters, micro-EVs, and E-forklifts.
The improved conduction losses and switching behavior for these new MOSFETs reduce the electromagnetic interference (EMI) and switching losses. This benefits various switching applications, including servers, telecom, energy storage systems (ESS), audio, solar and others.
Additionally, the combination of a wide safe operating area (SOA) and industry-leading R DS(on) results in a perfect fit for static switching applications such as battery management systems. With the introduction of the new OptiMOS 6 200 V product family, Infineon sets a new industry benchmark with increased power density, efficiency, and system reliability for its customers’ benefit.
The OptiMOS 6 200 V portfolio delivers enhanced technical features compared to its predecessor, the OptiMOS 3. It features a 42 percent lower R DS(on) that contributes to reduced conduction losses and increased output power. Regarding diode behavior, the OptiMOS 6 200 V provides a significant increase in softness, more than three times that of the OptiMOS 3.
Combined with up to 89 percent reduction in Q rr(typ), the switching and EMI behaviors are significantly improved. The technology also features improvements in parasitic capacitance linearity (C oss and C rss), which reduces oscillation during switching and lowers voltage overshoot. A tighter V GS(th) spread and lower transconductance aid in MOSFET paralleling and current sharing, leading to more uniform temperatures and reducing the number of paralleled MOSFETs.
The OptiMOS 6 200 V products feature an improved SOA and are classified as MSL 1 according to J-STD-020. These RoHS-compliant, lead-free products align with current industry standards.
Original – Infineon Technologies
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LATEST NEWS / PRODUCT & TECHNOLOGY / Si2 Min Read
STMicroelectronics released automotive-grade 600V/650V super-junction MOSFETs in STPOWER MDmesh DM9 AG series which deliver superior efficiency and ruggedness for on-board chargers (OBCs) and DC/DC converter applications in both hard- and soft-switching topologies.
With outstanding RDS(on) per die area and minimal gate charge, the silicon-based devices combine low energy losses with outstanding switching performance, setting a new benchmark figure of merit. Compared to the previous generation, the latest MDmesh DM9 technology ensures a tighter gate-source threshold voltage (VGS(th)) spread that results in sharper switching for lower turn-on and turn-off losses.
In addition, body-diode reverse recovery is improved, leveraging a new optimized process that also increases the MOSFETs’ overall ruggedness. The diode’s low reverse-recovery charge (Qrr) and fast recovery time (trr) make the MDmesh DM9 AG series ideal for phase-shift zero-voltage switching topologies that demand the utmost efficiency.
The family offers a selection of through-hole and surface-mount packages that help designers achieve a compact form factor with high power density and system reliability. The TO-247 LL (long-lead) is a popular through-hole option that eases design-in and leverages proven assembly processes. Among the surface-mount packages, the H2PAK-2 (2 leads) and H2PAK-7(7 leads) are optimized for bottom-side cooling with thermal substrates or PCBs featuring thermal vias or other enhancement. HU3PAK and ACEPACK™ SMIT topside-cooled surface-mount packages are also available.
The first device in the new STPOWER MDmesh DM9 AG series is the STH60N099DM9-2AG, a 27A AEC-Q101 qualified N-channel 600V device in H2PAK-2, with 76mΩ typical RDS(on). ST will expand the family to provide a full range of devices, covering a broad range of current ratings and RDS(on) from 23mΩ to 150mΩ.
Original – STMicroelectronics