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Artificial Intelligence is currently driving an exponential increase in global data generation, and consequently increasing the energy demands of the chips supporting this data growth. Infineon Technologies AG launched its TDM2254xD series dual-phase power modules that enable best-in-class power density, quality and total cost of ownership (TCO) for AI data centers.
The TDM2254xD series products blend innovation in robust OptiMOS TM MOSFET technology with novel packaging and proprietary magnetic structure to deliver industry-leading electrical and thermal performance with robust mechanical design. This lets data centers operate at higher efficiency to meet the high power demands of AI GPU (Graphic Processor Unit) platforms while also significantly reducing TCO.
Given that AI servers require 3 times more energy than traditional servers, and data centers already consume more than 2 percent of the global energy supply, it is essential to find innovative power solutions and architecture designs that further drive decarbonization. Paving the way for the green AI factory, Infineon’s TDM2254xD dual-phase power modules combine with XDP TM Controller technology to enable efficient voltage regulation for high-performance computing platforms with superior electrical, thermal and mechanical operation.
Infineon introduced the TDM2254xD series at the Applied Power Electronics Conference (APEC). The modules’ unique design allows for efficient heat transfer from the power stage on to the heat sink through novel inductor design that is optimized to transfer current and heat, thereby allowing for a 2 percent higher efficiency than industry average modules at full load. Improving power efficiency at the core of a GPU yields significant energy savings at scale. This translates into megawatts saved for data centers computing generative AI and in turn leads to reduced CO 2 emissions and millions of dollars in operating cost savings over the system’s lifetime.
“This unique Product-to-System solution combined with our cutting-edge manufacturing lets Infineon deliver solutions with differentiated performance and quality at scale, thereby significantly reducing total cost of ownership for our customers,” said Athar Zaidi, Senior Vice President, Power & Sensor Systems at Infineon Technologies. “We are excited to bring this solution to market; it will accelerate computing performance and will further drive our mission of digitalization and decarbonization.”
Original – Infineon Technologies
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At the Applied Power Electronics Conference (APEC), CISSOID released its new series of SiC Inverter Control Modules (ICMs) dedicated to the E-mobility market. These software-powered SiC Inverter Control Modules are designed to help engineers create functionally safe, robust and modular E-motor drives while dramatically shortening time-to-market.
The new CXT-ICM3SA series offers optimal hardware and software integration of CISSOID’s existing line of 3-phase 1200V/340A-550A SiC MOSFET Intelligent Power Modules (IPMs) with an OLEA® T222 Field Programmable Control Unit (FPCU) control board and OLEA® APP INVERTER application software, supplied in partnership with Silicon Mobility. Depending on the selected ICM product, this modular core engine is capable of powering and controlling high voltage SiC traction inverters with battery voltages up to 850V, at output power exceeding 350kW, and with peak efficiency above 99%.
This unique integration facilitates the rapid development of SiC inverters by solving head-scratching EMC issues often generated due to fast-switching SiC transistors, by supporting different modulation schemes, e.g. SVPWM or DPWM, combined with dead time compensation, and by offering advanced motor control algorithms, including Field Oriented Control (FOC) and Flux Weakening management.
CISSOID further improves time-to-market by providing a complete SiC inverter reference design allowing motor bench testing of the ICM together with key peripheral elements such as current sensors, a high-performance DC-Link capacitor and EMI filter. Both the ICM and the reference design can be obtained from CISSOID, together with the motor control software and on-site technical support.Delivering leadership performance, the ICM supports the drive of high-speed motors, with no compromise on efficiency, thanks to the combination of CISSOID’s low losses SiC power module with the ultra-fast real-time FPCU, enabling high switching frequencies up to 50kHz. Furthermore, this application-specific processor dedicated to e-motor control, with onboard programmable hardware, accelerates the response time to critical events, off-loading the processor cores and enhancing functional safety. Both the FPCU and the control software are ISO-26262 ASIL C/D certified and AUTOSAR 4.3 compliant.
Original – CISSOID
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Toshiba Electronic Devices & Storage Corporation has added DTMOSVI(HSD), power MOSFETs with high-speed diodes suitable for switching power supplies, including data centers and photovoltaic power conditioners, to its latest-generation DTMOSVI series with a super junction structure. Shipments of the first two products “TK042N65Z5” and “TK095N65Z5,” 650V N-channel power MOSFETs in TO-247 packages, start today.
The new products use high-speed diodes to improve the reverse recovery characteristics important for bridge circuit and inverter circuit applications. Against the standard DTMOSVI, they achieve a 65% reduction in reverse recovery time (trr), and an 88% reduction in reverse recovery charge (Qrr) (measurement conditions: -dIDR/dt= 100A/μs).
The DTMOSVI(HSD) process used in the new products improves on the reverse recovery characteristics of Toshiba’s DTMOSIV series with high-speed diodes (DTMOSIV(HSD)), and has a lower drain cut-off current at high temperatures. The figure of merit “drain-source On-resistance × gate-drain charges” is also lower. The high temperature drain cut-off current of TK042N65Z5 is approximately 90% lower, and the drain-source On-resistance × gate-drain charge 72% lower, than in Toshiba’s current TK62N60W5.
This advance will cut equipment power loss and help to improve efficiency. The TK042N65Z5 shows a maximum improvement in power supply efficiency over the current TK62N60W5 of about 0.4%, as measured in a 1.5kW LLC circuit.
A reference design, “1.6 kW Server Power Supply (Upgraded)”, that uses TK095N65Z5 is available on Toshiba’s website today. The company also offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available.
Toshiba plans to expand the DTMOSVI(HSD) line-up with the release of devices in TO-220 and TO-220SIS through-hole packages, and TOLL and DFN 8×8 surface-mount packages.
The company also will continue to expand its line-up of the DTMOSVI series beyond the already released 650V and 600V products and the new products with high-speed diodes. This will enhance switching power supply efficiency, contributing to energy-saving equipment.
Original – Toshiba
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Ideal Power Inc. announced the successful completion of Phase II deliverables of a product development agreement with Stellantis, a top 10 global automaker.
Ideal Power is partnering with Stellantis’ advanced technology development team to develop a custom B-TRAN™ power module for use in electric vehicle (“EV”) drivetrain inverters in Stellantis’ next generation EV platform. Due to its compelling advantages, B-TRAN™ is also being evaluated for the automaker’s vehicle power management and EV charging ecosystem.
All Phase I deliverables were successfully completed including a wafer run and delivery of packaged and tested B-TRAN™ devices and test boards to both Stellantis and the program’s packaging company. Ideal Power also provided technical support, device characterization and test data to Stellantis on B-TRAN™ performance and related drive circuitry. The B-TRAN™ devices delivered to Stellantis outperformed the device performance specifications provided to Stellantis at the beginning of the program.
All Phase II deliverables were successfully completed ahead of schedule including a wafer run and delivery of tested B-TRAN™ devices and drivers to both the program’s packaging company and the organization building the initial drivetrain inverter. In Phase II, Ideal Power collaborated closely with Stellantis and the program partners to supply B-TRAN™ devices for integration into the custom power module and inverter designs.
The device testing results by the Stellantis program team validated the expected efficiency improvements anticipated from B-TRAN™ use in the drivetrain and its readiness for implementation in EV applications. Stellantis also approved the comprehensive reliability test plan for automotive qualification provided by Ideal Power.
Phase III builds on the completion of all Phase I and II deliverables and therefore transitions to Stellantis’ production team. Ideal Power and Stellantis are currently finalizing the scope of work for the next phase of the program. This phase is expected to include the extensive testing of the custom B-TRAN™ module to meet automotive certification standards enabling B-TRAN™ to be the core of the powertrain inverter for the automaker’s next-generation EVs. The objective of this phase is the completion and certification of a production-ready B-TRAN™-based module and is targeted for 2025.
“We’re thrilled with the success of both Phase I and II and advancement into the next phase of the program with Stellantis. Successful completion of Phases I and II were customer validation of the performance of B-TRAN™ and its potential impact in improving EV range and cost,” said Dan Brdar, President and Chief Executive Officer of Ideal Power. “We are leveraging our success with Stellantis to attract and engage other automobile OEMs and Tier 1 auto suppliers.”
This program represents Ideal Power’s second engagement with the world’s leading automotive manufacturers as another top 10 global automaker is already in company’s test and evaluation program.
Original – Ideal Power
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CISSOID will be exhibiting at APEC 2024 – the IEEE Applied Power Electronics Conference and Exposition. The conference will take place in Long Beach, California from February the 25th to the 29th. You can find CISSOID on the booths of partners Silicon Mobility (booth 452) & NAC Semi (booth 2035).
On this occasion, CISSOID will unveil the latest of their SiC offering. CISSOID will display the Intelligent power module, a complete SiC Inverter Reference Design, and a newly released product.
CISSOID’s latest IPM design offers the best SiC Gate driver technology in a compact form factor. Company’s SiC Inverter Reference Design offers a complete Inverter assembly with DC-link Capacitor, EMI Filter, DC and phase current sensors, active discharge circuit & reference cooling. It is built around CISSOID’s Inverter Control Module which will be released soon.
Inverter Control Module sneak peak, the complete offering will be unveiled on the conference floor.
Original – CISSOID
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Vishay Intertechnology, Inc. introduced five new half-bridge IGBT power modules in the newly redesigned INT-A-PAK package. Built on Vishay’s Trench IGBT technology, the VS-GT100TS065S, VS-GT150TS065S, VS-GT200TS065S, VS-GT100TS065N, and VS-GT200TS065N offer designers a choice of two best in class technologies — low VCE(ON) or low Eoff — to lower conduction or switching losses in high current inverter stages for transportation, energy, and industrial applications.
The half-bridge devices released today combine Trench IGBTs — which deliver improved power savings versus other devices on the market — with Gen IV FRED Pt® anti-parallel diodes with ultra soft reverse recovery characteristics. Offering a new gate pin orientation, the modules’ compact INT-A-PAK package is now 100 % compatible with the 34 mm industry-standard package to offer a mechanical drop-in replacement.
The industrial-level devices will be used in power supply inverters for railway equipment; energy generation, distribution, and storage systems; welding equipment; motor drives; and robotics. To reduce conduction losses in output stages for TIG welding machines, the VS-GT100TS065S, VS-GT150TS065S, and VS-GT200TS065S offer an industry-low collector to emitter voltage of ≤ 1.07 V at +125 °C and rated current. For high frequency power applications, the VS-GT100TS065N and VS-GT200TS065N offer extremely low switching losses, with Eoff down to 1.0 mJ at +125 °C and rated current.
The RoHS-compliant modules feature 650 V collector to emitter voltages, continuous collector current from 100 A to 200 A, and very low junction to case thermal resistance. UL-approved file E78996, the devices can be directly mounted to heatsinks and offer low EMI to reduce snubbing requirements.
Device Specification Table:
Part # VCES IC VCE(ON) Eoff Speed Package @ IC and +125 °C VS-GT100TS065S 650 V 100 A 1.02 V 6.5 mJ DC to 1 kHz INT-A-PAK VS-GT150TS065S 650 V 150 A 1.05 V 10.3 mJ DC to 1 kHz INT-A-PAK VS-GT200TS065S 650 V 200 A 1.07 V 13.7 mJ DC to 1 kHz INT-A-PAK VS-GT100TS065N 650 V 100 A 2.12 V 1.0 mJ 8 kHz to 30 kHz INT-A-PAK VS-GT200TS065N 650 V 200 A 2.13 V 3.86 mJ 8 kHz to 30 kHz INT-A-PAK Original – Vishay Intertechnology
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The electrification of everything is driving the widespread adoption of Silicon Carbide (SiC) technology in medium-to-high-voltage applications like transportation, electric grids and heavy-duty vehicles. To help developers implement SiC solutions and fast-track the development process, Microchip Technology introduced the 3.3 kV XIFM plug-and-play mSiC™ gate driver with patented Augmented Switching™ technology, which is designed to work out-of-the-box with preconfigured module settings to significantly reduce design and evaluation time.
To speed time to market, the complex development work of designing, testing and qualifying a gate driver circuit design is already completed with this plug-and-play solution. The XIFM digital gate driver is a compact solution that features digital control, an integrated power supply and a robust fiber-optic interface that improves noise immunity. This gate driver has preconfigured “turn-on/off” gate drive profiles that are tailored to optimize module performance.
It incorporates 10.2 kV primary-to-secondary reinforced isolation with built-in monitoring and protection functions including temperature and DC link monitoring, Undervoltage Lockout (UVLO), Overvoltage Lockout (OVLO), short-circuit/overcurrent protection (DESAT) and Negative Temperature Coefficient (NTC). This gate driver also complies with EN 50155, a key specification for railway applications.
“As the silicon carbide market continues to grow and push the boundaries of higher voltage, Microchip makes it easier for power system developers to adopt wide-bandgap technology with turnkey solutions like our 3.3 kV plug-and-play mSiC gate driver,” said Clayton Pillion, vice president of Microchip’s silicon carbide business unit. “By having the gate drive circuitry preconfigured, this solution can reduce design cycle time by up to 50% compared to a traditional analog solution.”
With over 20 years of experience in the development, design, manufacturing and support of SiC devices and power solutions, Microchip helps customers adopt SiC with ease, speed and confidence. Microchip’s mSiC™ products include SiC MOSFETS, diodes and gate drivers with standard, modified and custom options.
Original – Microchip Technology
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Texas Instruments introduced two new power conversion device portfolios to help engineers achieve more power in smaller spaces, providing the highest power density at a lower cost. TI’s new 100V integrated gallium nitride (GaN) power stages feature thermally enhanced dual-side cooled package technology to simplify thermal designs and achieve the highest power density in mid-voltage applications at more than 1.5kW/in3.
TI’s new 1.5W isolated DC/DC modules with integrated transformers are the industry’s smallest and most power-dense, helping engineers shrink the isolated bias power-supply size in automotive and industrial systems by over 89%. Devices from both portfolios will be on display at this year’s Applied Power Electronics Conference (APEC), Feb. 25-29 in Long Beach, California.
“For power-supply designers, delivering more power in limited spaces will always be a critical design challenge,” said Kannan Soundarapandian, general manager of High Voltage Power at TI. “Take data centers, for example – if engineers can design power-dense server power-supply solutions, data centers can operate more efficiently to meet growing processing needs while also minimizing their environmental footprint. We’re excited to continue to push the limits of power management by offering innovations that help engineers deliver the highest power density, efficiency and thermal performance.”
Increase power density and efficiency with 100V integrated GaN power stages
With TI’s new 100V GaN power stages, LMG2100R044 and LMG3100R017, designers can reduce power-supply solution size for mid-voltage applications by more than 40% and achieve industry-leading power density of over 1.5kW/in3, enabled by GaN technology’s higher switching frequencies. The new portfolio also reduces switching power losses by 50% compared to silicon-based solutions, while achieving 98% or higher system efficiency given the lower output capacitance and lower gate-drive losses. In a solar inverter system, for example, higher density and efficiency enables the same panel to store and produce more power while decreasing the size of the overall microinverter system.A key enabler of the thermal performance in the 100V GaN portfolio is TI’s thermally enhanced dual-side cooled package. This technology enables more efficient heat removal from both sides of the device and offers improved thermal resistance compared to competing integrated GaN devices.
To learn more about the benefits of TI’s 100V GaN power stages for mid-voltage applications, read the technical article, “4 mid-voltage applications where GaN will transform electronic designs.”
Shrink bias power supplies by more than 89%
With over eight times higher power density than discrete solutions and three times higher power density than competing modules, TI’s new 1.5W isolated DC/DC modules deliver the highest output power and isolation capability (3kV) for automotive and industrial systems in a 4mm-by-5mm very thin small outline no-lead (VSON) package. With TI’s UCC33420-Q1 and UCC33420, designers can also easily meet stringent electromagnetic interference (EMI) requirements, such as Comité International Spécial des Perturbations Radioélectriques (CISPR) 32 and 25, with fewer components and a simple filter design.The new modules use TI’s next-generation integrated transformer technology, which eliminates the need for an external transformer in a bias supply design. The technology allows engineers to shrink solution size by more than 89% and reduce height by up to 75%, while cutting bill of materials by half compared to discrete solutions.
With the first automotive-qualified solution in this small package, designers can now reduce the footprint, weight and height of their bias supply solution for electric vehicle systems such as battery management systems. For space-constrained industrial power delivery in data centers, the new module enables designers to minimize printed circuit board area.
To learn more about the benefits of TI’s 1.5W isolated DC/DC modules, read the technical article, “How a new isolated DC/DC module can help solve power-density challenges.”
Pushing the limits of power at APEC 2024
These new devices are the latest ways TI is pushing power further and making innovation possible for engineers everywhere. At APEC 2024, TI will showcase the latest automotive and industrial designs for 48V automotive power; the first USB Power Delivery Extended Power Range full charging solution on the market; an 800V, 300kW silicon carbide-based traction inverter; high-efficiency power for server motherboards; and more.- Saturday, Feb. 24-Thursday, Feb. 29: Visit TI in the Long Beach Convention & Entertainment Center, Booth No. 1145. See TI.com/APEC for more information.
- Wednesday, Feb. 28 at 12 p.m. Pacific time: TI General Manager of Industrial Power Design Services Robert Taylor will present an industry session, “To Power Density and Beyond: Breaking Through Barriers to Achieve the Highest Power Density.” He will discuss innovations in packaging, integration and system-level techniques that are making greater power density possible.
- Throughout APEC: TI power experts will lead 20 industry and technical sessions to address power-management design challenges. The full schedule of TI experts’ industry and technical sessions is available at TI.com/APEC.
Original – Texas Instruments
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SemiQ Inc. unveiled the latest addition to the company’s QSiC™ family. The QSiC 1200V SiC MOSFET modules in full-bridge configurations deliver near zero switching loss, significantly improving efficiency, reducing heat dissipation, and allowing the use of smaller heatsinks.
With a high breakdown voltage exceeding 1400V, the QSiC modules in full-bridge configurations withstand high-temperature operation at Tj = 175°C with minimal Rds(On) shift across the entire temperature spectrum. Crafted from high-performance ceramics, SemiQ’s modules achieve exceptional performance levels, increased power density, and more compact designs—especially in high-frequency and high-power environments.
Consequently, they are well-suited for demanding applications that require bidirectional power flow or a broader range of control, such as solar inverters, drives and chargers for Electric Vehicles (EVs) DC-DC converters and power supplies.
In solar inverter applications, SemiQ’s technology empowers designers to achieve greater efficiency – reaching as high as 98% – as well as more compact designs. It helps reduce heat loss, improve thermal stability, and enhance reliability, backed by over 54 million hours of HTRB/H3TRB testing. The 1200V MOSFETs also maximize efficiency gains in DC-DC converters while enhancing reliability and minimizing power dissipation.
To guarantee a stable gate threshold voltage and premium gate oxide quality for each module, SemiQ conducts gate burn-in testing at the wafer level. In addition to the burn-in test, which contributes to mitigating extrinsic failure rates, various stress tests—including gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB)—are employed to attain the necessary automotive and industrial grade quality standards. The devices also offer extended short-circuit ratings, and all parts have undergone testing surpassing 1400V.
“At SemiQ, our commitment lies in the meticulous optimization and customization of each module, ensuring they not only meet but exceed the unique demands of high-efficiency, high-power applications,” said Dr. Timothy Han, President at SemiQ. “We believe in empowering innovation through tailored solutions, and our SiC modules exemplify the pinnacle of performance, precision, and reliability in every customized design.”
SemiQ is set to debut its QSiC product family in SOT-227, half-bridge, and full-bridge packages at the Applied Power Electronics Conference (APEC) in Long Beach, CA, from February 25 to 29, 2024. Attendees at SemiQ’s booth #2245 will be the first to explore the newest additions to the QSiC lineup. Schedule a meeting with the SemiQ team using online calendar or email at media@semiq.com.
SemiQ’s new 1200V modules in full-bridge packages are available in 20mΩ, 40mΩ, 80mΩ SiC MOSFETs categories:
Part Numbers Circuit Configuration Ratings, Packages RdsOn mΩ GCMX020A120B2H1P Full-bridge 1200V/102A, B2 20 GCMX040A120B2H1P Full-bridge 1200V/56A, B2 40 GCMX080A120B2H1P Full-bridge 1200V/27A, B2 80 GCMX020A120B3H1P Full-bridge 1200V/93A, B3 20 GCMX040A120B3H1P Full-bridge 1200V/53A, B3 40 Original – SemiQ
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ROHM has developed 100V breakdown Schottky barrier diodes (SBDs) that deliver industry-leading reverse recovery time (trr) for power supply and protection circuits in automotive, industrial, and consumer applications.
Although numerous types of diodes exist, highly efficient SBDs are increasingly being used inside a variety of applications. Particularly SBDs with a trench MOS structure that provide lower VF than planar types enable higher efficiency in rectification applications. One drawback of trench MOS structures, however, is that they typically feature worse trr than planar topologies – resulting in higher power loss when used for switching.
In response, ROHM developed a new series utilizing a proprietary trench MOS structure that simultaneously reduces both VF and IR (which are in a trade-off relationship) while also achieving class leading trr.
Expanding on the four existing conventional SBD lineups optimized for a variety of requirements, the YQ series is ROHM’s first to adopt a trench MOS structure. The proprietary design achieves class-leading trr of 15ns that reduces trr loss by approx. 37% and overall switching loss by approx. 26% over general trench-type MOS products, contributing to lower application power consumption.
The new structure also improves both VF and IR loss compared to conventional planar type SBDs. This results in lower power loss when used in forward bias applications such as rectification, while also providing less risk of thermal runaway which is a major concern with SBDs. As such, they are ideal for sets requiring high-speed switching, such as drive circuits for automotive LED headlamps and DC-DC converters in xEVs that are prone to generate heat.
Going forward, ROHM will strive to further improve the quality of its semiconductor devices, from low to high voltages, while strengthening its expansive lineup to further reduce power consumption and achieve greater miniaturization.
SBD Trench MOS Structure
The trench MOS structure is created by forming a trench using polysilicon in the epitaxial wafer layer to mitigate electric field concentration. This reduces the resistance of the epitaxial wafer layer, achieving lower VF when applying voltage in the forward direction. At the same time, during reverse bias the electric field concentration is minimized, significantly decreasing IR. As a result, the YQ series improves VF and IR by approx. 7% and 82%, respectively, compared to conventional products.
And unlike with typical trench MOS structures where trr is worse than planar types due to larger parasitic capacitance (resistance component in the device), the YQ series achieves an industry-leading trr of 15ns by adopting a unique structural design. This allows switching losses to be reduced by approx. 26%, contributing to lower application power consumption.Application Examples
- Automotive LED headlamps
- xEV DC-DC converters
- Power supplies for industrial equipment
- Lighting
Original – ROHM
