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Navitas Semiconductor has announced a latest breakthrough of the world’s first production-released 650 V bi-directional GaNFast ICs and high-speed isolated gate-drivers, creating a paradigm shift in power with single-stage BDS converters, which enables the transition from two-stage to single-stage topologies. Targeted applications range widely and opens up multi-billion dollar market opportunities across EV charging (On-Board Chargers (OBC) and roadside), solar inverters, energy storage and motor drives. The recorded launch event video can be viewed here.
Over 70% of today’s high-voltage power converters use a ‘two-stage’ topology. For example, a typical AC-DC EV OBC implements an initial power-factor-correction (PFC) stage and a follow-on DC-DC stage, with bulky ‘DC-link’ buffering capacitors. The resulting systems are large, lossy, and expensive. Bi-directional GaNFast consolidates the two stages into a single, high-speed, high-efficiency stage and in the process, eliminates the bulky capacitors and input inductors – the ultimate solution in EV OBCs.
A leading EV and solar micro-inverter manufacturer have already begun their implementation of single-stage BDS converters to improve efficiency, size, and cost in their systems. GaNFast-enabled single-stage converters achieve up to 10% cost savings, 20% energy savings, and up to 50% size reductions.
The ultimate power semiconductor switch (transistor) can block voltage and allow current flow in two directions, with the highest efficiency. Navitas’ leadership in GaN innovation has delivered this landmark – the bi-directional GaNFast power IC.
Previously, two discrete, ‘back-to-back’ single switches had to be used, but new bi-directional GaNFast ICs are leading-edge, single-chip designs (monolithic integration) with a merged drain structure, two gate controls, and a patented, integrated, active substrate clamp. One high-speed, high-efficiency bi-directional GaNFast IC replaces up to 4 older switches, increasing system performance while reducing component count, PCB area, and system costs.
The initial 650 V bi-directional GaNFast ICs include NV6427 (100 mΩ RSS(ON) typ.) and NV6428 (50 mΩ RSS(ON) typ) in thermally enhanced, top-side-cooled TOLT-16L (Transistor Outline Leaded Topside-cooled) packaging. The product family will be extended into lower RSS(ON) offerings in the future.
The new, high-speed IsoFast devices are galvanically isolated, high-speed drivers optimized to drive bi-directional GaN. With 4x higher transient immunity than existing drivers (up to 200 V/ns) and no external negative bias supply needed, they deliver reliable, fast, accurate power control in high-voltage systems. Initial parts are the NV1702 (dual, independent-channel, digital, isolated bi-directional GaN gate driver) and NV1701 (half-bridge GaN digital isolator) in SOIC-16N and SOIC-14W packages.
“These ICs are a truly game-changing and disruptive technology both at the semiconductor and at the system level. They not only deliver improved efficiency, power density, simplicity, and system costs but will also transform multiple multi-billion-dollar markets in the most sustainable way possible.” Gene Sheridan, CEO and co-founder of Navitas commented. “The future of our electrified planet is bi-directional energy flow. From all renewable energy sources, the power grid, and all electrified applications, such as ESS, solar and EVs, energy should flow efficiently & bi-directionally, creating a critical new currency for our future planet. Single-stage BDS converters are the key for this inflection”.
Bi-directional GaNFast ICs (NV6427 and NV6428) are fully qualified and immediately available in mass-production quantities. IsoFast (NV1701 and NV1702) samples are available now to qualified customers.
Single-stage evaluation boards and user guide showcasing both IsoFast and bi-directional GaNFast ICs are available for qualified customers.
Navitas will feature bi-directional GaNFast ICs and IsoFast at the APEC 2025 power electronics conference in Atlanta, March 17th-19th, booth 1107.
Original – Navitas Semiconductor
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Infineon Technologies AG has introduced its roadmap for next-level Battery Backup Unit (BBU) solutions for uninterrupted operations of AI data centers to avoid power outages and the risk of data losses. The comprehensive BBU roadmap includes power solutions from 4 kW up to the world’s first 12 kW battery backup unit. The BBU solutions are designed to deliver highly efficient, reliable, and scalable power conversion in AI server racks, and achieve a power density up to 400 percent higher compared to industry average.
BBUs are essential for AI data centers to provide an uninterruptible power supply and furthermore protect sensitive AI hardware from voltage spikes, surges, and other power anomalies by filtering and conditioning the power that is supplied to the data center equipment. Combined with various best-in-class topologies enabling an increased ease-of-use for customers, the BBU solutions are bolstering Infineon’s leading position in the field of powering artificial intelligence.
“Ensuring an uninterrupted power supply to AI systems is critical for maintaining process continuity and seamless operation,” said Adam White, Division President Power & Sensor Systems at Infineon. “Our energy efficient battery backup units are designed to keep AI servers running smoothly with exceptional performance, flexibility, and efficiency catering to the diverse power levels required by AI servers. By mastering all three relevant semiconductor materials silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) we are confident that Infineon semiconductor solutions will set a new standard in powering AI data centers.”
Downtime or system failures in AI data centers can be extraordinarily costly, with 41 percent of firms interviewed in an ITIC survey from 2024 indicating losses from $1 million to over $5 million per hour of downtime. 35 percent of these failures are attributed to issues with power component quality. To address this, Infineon’s Partial Power Converter (PPC), a semiconductor solution that focuses on improving performance and reliability of power supply systems, stands out as a leading technology for battery backup units.
The intermediate solution, represented by the 5.5 kW BBU, features an Infineon proprietary topology that integrates Si and GaN technologies providing ultra-high efficiency and high-power density. The industry-first 12 kW system combines several 4 kW power converter cards utilizing Infineon’s PSOC™ microcontrollers, 40 V and 80 V OptiMOS™ and EiceDRIVER™ Gate Drivers enabling unparalleled performance and flexibility, achieving a power density four times higher than industry average.
Higher power levels can be attained by paralleling multiple cards on a motherboard, offering ease of scalability and simplified maintenance. If one card fails, the system continues to operate at a reduced capacity, minimizing downtime and ensuring high reliability. This modular approach allows the system to be tailored to specific power requirements without the need for a full system redesign creating substantial customer benefits in performance and reliability.
To further demonstrate the capabilities of the latest BBU technology, Infineon is developing full system demonstrators for its battery backup solutions. These demonstrators will showcase the advantages of the PPC technology in real-world applications offering a clear path forward for next-generation AI data centers.
Original – Infineon Technologies
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Magnachip Semiconductor Corporation announced the launch of two new 6th-generation (Gen6) 650V Insulated Gate Bipolar Transistors (IGBTs), specifically designed for solar inverters.
The newly introduced Gen6 IGBTs, incorporating polyimide insulation layers, demonstrate outstanding performance by passing high-voltage, high-humidity and high-temperature reverse bias (HV-H3TRB) tests. These products offer dependable reliability in industrial equipment operating under extreme conditions, including elevated temperatures and humidity.
Additionally, integrated fast recovery anti-parallel diodes ensure swift removal of residual current, reducing switching losses in applications while supporting an operating temperature range of up to 175°C.
Of the two new products, the MBQ40T65S6FHTH features exceptional conduction loss reduction. Compared to the previous generation, this IGBT decreases conduction loss by approximately 25% and boosts system efficiency by about 15% in 15kW solar inverters.
The MBQ40T65S6FSTH is engineered to significantly reduce switching loss. It cuts switching loss by 15% and conduction loss by approximately 8% compared to its predecessor, enhancing system efficiency by about 11% in 3kW solar inverters.
With these performance upgrades, the new IGBTs are suitable for applications that demand high reliability and efficiency, such as solar inverters, industrial motor drives, power supply units and uninterruptible power supplies.
According to market research firm Omdia, the discrete IGBT market in the renewable energy sector is expected to grow at a compound annual growth rate of 19% from 2025 to 2028.
“In the second half of this year, we plan to introduce a broader range of Gen6 650V IGBT products with current ratings from 5A to 75A, as part of our strategy to significantly expand our pipeline of new-generation Power products,” said YJ Kim, CEO of Magnachip. “We have a proven track record in Power with nearly 1,000 chip designs and the manufacture and shipment of more than 23 billion units since we entered the Power business in 2007. Moving forward, we will continue to strengthen our IGBT product family to drive innovation in renewable energy, automotive, industrial and AI applications.”
Original – Magnachip Semiconductor
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Magnachip Semiconductor Corporation announced a significant expansion of its product lineup with the launch of 25 new 6th-generation (Gen6) SJ MOSFETs (Super Junction Metal-Oxide-Semiconductor Field-Effect Transistors).
The switching speeds of the newly developed Gen6 SJ MOSFETs have been improved by approximately 23%, reducing the RSP of applications by about 40% compared to the previous generation, thereby enhancing the Figure of Merit by 40%.
Additionally, a Zener diode is embedded between the gate and source to enhance reliability and protect the SJ MOSFETs from ESD-induced damage. The chip sizes of the new products are also approximately 30% smaller than their predecessor product.
The new product lineup consists of 600V, 650V, and 700V voltage ratings and is available in 7 package types, including TO220, TO220FT, SOT223, PDFN88, and D2PAK, with high-demand options, such as DPAK and TO220F.
As a result, these SJ MOSFETs are well-suited for various applications requiring high power efficiency, including AI TVs, smart refrigerators, AI laptop adapters and power supplies. According to market research firm Omdia, the global smart home device market is projected to grow by 20% annually from 2025 to 2028.
“With the successful launch of 25 new Gen6 SJ MOSFETs integrating Magnachip’s latest technology, we have further strengthened our product lineup to meet our customers’ evolving technical requirements,” said YJ Kim, CEO of Magnachip. “By delivering optimal power solutions for the AI, industrial applications and smart home appliances, we aim to contribute to the growth and success of our customers in these sectors, and further advance our technology and market leadership as we transition to a pure-play Power company.”
Original – Magnachip Semiconductor
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Alpha and Omega Semiconductor Limited (AOS) announced the release of two state-of-the-art surface mounting package options for its industry-leading high power MOSFET portfolio. Designed to meet the robust packaging requirements for the most demanding applications that require increased performance and reliability, the new GTPAK™ and GLPAK™ packages will first be available on AOS’ AOGT66909 and AOGL66901 MOSFETs respectively. Combining AOS-proven robust MOSFET technology with advanced packaging know-how, these devices provide low ohmic and high current capabilities, critical to reducing the number of parallel MOSFETs needed in high current designs such as in next-generation e-mobility and industrial applications.
The GTPAK offered with the AOGT66909 is a topside cooling package designed with a large exposed pad for more efficient heat transfer. The topside cooling technology transfers most heat to the heat sink mounted on the top exposed pad. This feature allows the GTPAK to offer a more effective thermal dissipation route than going through the PCB board, allowing a lower-cost PCB, such as FR4, to be used.
The GLPAK offered with the AOGL66901 is a gull-wing version of AOS’ successful TOLL package. It is designed using AOS’ advanced clip technology to achieve a high inrush current rating. The GLPAK with clip technology offers very low package resistance and parasitic inductance, improving EMI performance compared to other package types that employ standard wire bonding.
The GTPAK and GLPAK packages feature gull-wing leads, enabling excellent solder joint reliability even for insulated metal substrates (IMS) applications. This gull-wing construction also provides enhanced thermal cycling for IMS boards and other critical applications that must meet higher reliability objectives. AOS MOSFETs in the new GTPAK and GLPAK packages are manufactured in IATF16949-certified facilities and are compatible with automated optical inspection (AOI) manufacturing requirements.
“We are committed to delivering new solutions to help our customers meet or exceed their power performance requirements. By offering our industry-leading MOSFETs in the new robust GTPAK and GLPAK packages, AOS allows designers to select from two state-of-the-art packaging technologies that offer significant performance improvements. Furthermore, the advanced technologies in our AOGT66909 and AOGL66901 MOSFETs will help simplify new designs by reducing the number of devices needed while also providing the necessary higher current capability that makes overall system cost savings possible,” said Peter H. Wilson, Marketing Sr. Director of MOSFET product line at AOS.
Technical Highlights
Continuous Drain
Current (A)Pulsed Drain
Current (A)RDS(ON) Max
(mOhms)Part Number Package VDS
(V)VGS
(±V)TJ
(°C)@25°C @100°C @25°C @10V AOGT66909 GTPAK 100 20 175 366 258 1464 1.5 AOGL66901 GLPAK 100 20 175 448 316 1790 1.25 Original – Alpha and Omega Semiconductor
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Infineon Technologies AG launched the next generation of high-density power modules which play a pivotal role in enabling AI and high-performance compute. Through enhanced system performance and with Infineon’s trademark robustness, the new OptiMOS™ TDM2454xx quad-phase power modules enable best-in-class power density and total-cost-of-ownership (TCO) for AI data centers operators.
The OptiMOS TDM2454xx quad-phase power modules enable true vertical power delivery (VPD) and offer industry’s best current density of 2 Ampere per mm². The modules follow the OptiMOS TDM2254xD and the OptiMOS TDM2354xD dual-phase power modules introduced by Infineon last year, and continue to enable superior power density for accelerated compute platforms.
In traditional horizontal power delivery systems, power needs to travel across the surface of the semiconductor wafer, which can result in higher resistance and significant power loss. Vertical power delivery minimizes the distance that power needs to travel, thereby reducing resistive losses enabling increased system performance.
Data centers are currently responsible for two percent of global energy consumption according to the IEA. Fueled by AI, the power demands within data centers are expected to grow by 165% between 2023 and 2030. Continually improving the efficiency and power densities of power conversion from grid-to-core is vital to enable further advancements in compute performance while reducing TCO.
“We are proud to expand our high-performance AI data center solutions with the OptiMOS TDM2454xx VPD modules,” said Rakesh Renganathan, Vice President Power ICs at Infineon Technologies. “We take a three-dimensional design approach and leverage our industry-leading power devices, packaging technologies and extensive systems expertise to provide high-performance and energy-efficient computing solutions as part of our mission to drive digitalization and decarbonization.”
The OptiMOS TDM2454xx modules are a fusion of Infineon’s robust OptiMOS 6 trench technology, chip-embedded package for superior electrical and thermal efficiencies, and innovative low-profile magnetic design that continue to push the envelope for performance and quality of VPD systems.
Additionally, the OptiMOS TDM2454xx has a footprint that is designed to enable module tiling and improving current flow that enhance electrical, thermal and mechanical performance. The OptiMOS TDM2454xx modules support up to 280A across four phases with an integrated embedded capacitor layer within a small 10x9mm² form factor. Combined with Infineon’s XDP™ controllers, they offer a robust power solution with improved system power density.
The OptiMOS TDM2454xx modules are further strengthening Infineon’s unique position in the market with the broadest product and technology portfolio based on all relevant semiconductor materials to power different AI server configurations from grid to core in the most energy efficient way.
Original – Infineon Technologies
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Cambridge GaN Devices revealed more details about a solution that will enable the company to address EV powertrain applications over 100kW – a market worth over $10B – with its ICeGaN® gallium nitride (GaN) technology. Combo ICeGaN® combines smart ICeGaN HEMT ICs and IGBTs (Insulated-Gate Bipolar Transistors) in the same module or IPM, maximizing efficiency and offering a cost-effective alternative to expensive silicon carbide (SiC) solutions.
Dr GIORGIA LONGOBARDI | FOUNDER AND CEO, CGD
“Today, inverters for EV powertrains either use IGBTs which are low cost but inefficient at light load conditions, or SiC devices which are very efficient but also expensive. Our new Combo ICeGaN solution will revolutionise the EV industry by intelligently combining the benefits of GaN and silicon technologies, keeping cost low and maintaining the highest levels of efficiency which, of course, means faster charging and longer range. We are already working with Tier One automotive EV manufacturers and their supply chain partners to bring this technology advancement to the market.”The proprietary Combo ICeGaN approach uses the fact that ICeGaN and IGBT devices can be operated in a parallel architecture having similar drive voltage ranges (e.g. 0-20V) and excellent gate robustness. In operation, the ICeGaN switch is very efficient, with low conduction and low switching losses at relatively low currents (light load), while the IGBT is dominant at relatively high currents (towards full load or during surge conditions).
Combo ICeGaN also benefits from the high saturation currents and the avalanche clamping capability of IGBTs and the very efficient switching of ICeGaN. At higher temperatures, the bipolar component of the IGBT will start to conduct at lower on-state voltages, supplementing the loss of current in the ICeGaN. Conversely, at lower temperatures, ICeGaN will take more current. Sensing and protection functions are intelligently managed to optimally drive the Combo ICeGaN and enhance the Safe Operating Area (SOA) of both ICeGaN and IGBT devices.
ICeGaN technology allows EV engineers to enjoy GaN’s benefits in DC-to-DC converters, on-board chargers and potentially traction inverters. Combo ICeGaN further extends the benefits of CGD’s GaN technology into the rich 100kW+ traction inverter market. ICeGaN ICs have been proven to be very robust and IGBTs have a long and proven track record in traction and EV applications. Similar, proprietary parallel combinations of ICeGaN devices with SiC MOSFETs have also been proven by CGD, but Combo ICeGaN – which is now detailed in a published IEDM paper – is a far more economical solution. CGD expects to have working demos of Combo ICeGaN at the end of this year.
Prof. FLORIN UDREA | FOUNDER AND CTO, CGD
“Having worked for three decades in the field of power devices, this is the first time I have encountered such a beautifully complementary technology pairing. ICeGaN is extremely fast and a star performer at light load conditions while the IGBT brings great benefits during full load, surge conditions and at high temperatures. ICeGaN provides on-chip intelligence while the IGBT provides avalanche capability. They both embrace silicon substrates which come with cost, infrastructure and manufacturability advantages.”CGD will be exhibiting at APEC (Applied Power Electronics Conference and Exposition). For more details about Combo ICeGaN, visit Booth 2039 at the Georgia World Congress Center | Atlanta, GA | March 16-20, 2025.
Original – Cambridge GaN Devices
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Toshiba Electronic Devices & Storage Corporation has launched a gate driver photocoupler, “TLP5814H,” with an output of +6.8A/-4.8A, in a small size SO8L package, that incorporates an active Miller clamp function for driving silicon carbide (SiC) MOSFETs.
In circuits such as inverters, where MOSFETs or IGBTs are used in series, gate voltage can be generated by a Miller current when the lower arm is turned off, causing malfunctions such as short circuits in the upper and lower arms. A commonly used protection function to prevent this is the application of a negative voltage to the gate when it is turned off.
For some SiC MOSFETs, which commonly feature higher voltage, lower on-resistance and faster switching characteristics than silicon (Si) MOSFETs, sufficient negative voltage cannot be applied between the gate and source. In this case, an active Miller clamp circuit can be used to flow the Miller current from the gate to ground, preventing the short circuiting without the need to apply the negative voltage. However, there are cost-cutting designs that reduce the negative voltage applied to the gate when the IGBTs are turned off, and in these cases, gate drivers with a built-in active Miller clamp are an option for consideration.
The new product has a built-in active Miller clamp circuit, so there is no need for an additional power supply for negative voltage and external active Miller clamp circuits. This provides a safety function for the system and also promotes system miniaturization by reducing the number of external circuits. The active Miller clamp circuit has a channel resistance of 0.69Ω (typ.) and a peak clamp sinking current rating of 6.8A, making it suitable as a gate driver for SiC MOSFETs, which are highly sensitive to changes in gate voltage.
TLP5814H has an operating temperature rating of -40 to 125°C, achieved by enhancing the optical output of the infrared emitting diode on the input side and optimizing the design of the photo detector devices (photodiode arrays) to improve optical coupling efficiency.
This makes it suitable for industrial equipment that require strict thermal management, such as photovoltaic (PV) inverters and uninterruptible power supplies (UPSs). Its propagation delay time and propagation delay skew are also specified in the operating temperature rating range. Its package, a small size SO8L, 5.85×10×2.1mm (typ.), helps improve the flexibility of parts layout on a system board. In addition, it features a minimum creepage distance of 8.0mm, allowing it to be used for applications requiring high insulation performance.
Toshiba will continue to develop photocoupler products that contribute to enhancing the safety function of industrial equipment.
Original – Toshiba
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Infineon Technologies AG announced the addition of P-channel power MOSFETs to its family of radiation-tolerant power MOSFETs for Low-Earth-Orbit (LEO) space applications. The new devices are part of Infineon’s expanding portfolio designed for next-generation “NewSpace” applications, providing cost-optimized radiation-tolerant MOSFETs that enable engineers to achieve faster time-to-market designs using smaller and lighter weight components with radiation performance suitable for missions lasting two to five years.
“Successful deployment of next-generation LEO satellite constellations and other space-ready systems require radiation-tolerant discretes and ICs with lead times and production volumes that enable rapid deployment and cost optimization,” said Chris Opoczynski, Sr. VP and General Manager, High Reliability (HiRel) Business, Power and Sensor Systems Division, Infineon . “Infineon is leveraging its 50-years of space heritage to bring an industry-first portfolio of efficient and reliable power devices to this dynamic sector of the business.”
The new 60 V P-channel MOSFET complements the already available 60 V and 150 V N-channel devices, all offered in plastic packaging, which is lower in cost than the traditional hermetic packaging used in rad-hardened devices and can be produced in higher volumes using standard manufacturing practices.
The radiation-tolerant discretes are qualified for space applications according to the relevant tests of the AEC-Q101 standard. Additional package tests such as outgas and salt atmosphere tests are included as part of the qualification, and they are rated for Single Event Effects (SEE) at 46 MeV∙cm²/mg LET and a Total Ionizing Dose (TID) of 30 to 50 krad (Si). The operating temperature rating is -55 °C to 175 °C (maximum). State-of-the-art technologies, like the patented CoolMOS™ superjunction technology used for the N-channel MOSFETs enables Field Effect Transistors (FETs) from Infineon to offer fast switching capabilities as compared to alternative solutions.
Original – Infineon Technologies
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MCC Semi revealed the latest MOSFET designed to help engineers balance efficiency and thermal performance in high-power applications. The 150V MCTL4D0N15YH boasts a remarkably low on-resistance of 4mΩ, minimizing conduction losses for optimal efficiency.
Housed in a robust TOLL package, this component features advanced split-gate trench (SGT) technology and a junction-to-case thermal resistance of 0.39K/W for superior heat dissipation.
Equipped with an operating junction temperature capability of up to 175°C, this new MOSFET is the ideal solution for demanding applications, including battery management systems, motor drives, and DC-DC converters.
Offering versatility across multiple industries, MCTL4D0N15YH enhances system performance and longevity while reducing overall energy consumption.
Features & Benefits:
- SGT Technology: Ensures outstanding electrical performance and efficiency.
- Low On-Resistance (4mΩ): Minimizes power losses, enhancing system efficiency.
- Low Conduction Losses: Reduce energy waste, optimizing energy usage.
- Low Junction-to-Case Thermal Resistance (0.39K/W): Provides excellent heat dissipation capabilities.
- High Operating Junction Temperature (up to 175°C): Delivers reliability in high-temperature environments.
Original – Micro Commercial Components
