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Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two products of 600V small intelligent power device (IPD) for brushless DC motor drive applications such as air conditioners, air cleaners, and pumps. Volume shipments of “TPD4163K” and “TPD4164K,” which have output current (DC) ratings of 1A and 2A, respectively, start today.
Both new products are housed in a through hole type HDIP30 package, which reduces the mounting area by approximately 21% against Toshiba’s previous products. This helps reduce the size of motor drive circuit boards.
As power supply voltage may fluctuate significantly in regions with unstable power supply, the voltage has been increased from the 500V of Toshiba’s previous products[1] to 600V, which improves reliability.
A “Reference Design for Sensorless Brushless DC Motor Drive Circuit” that utilizes the functions of the new TPD4164K with a TMPM374FWUG microcontroller with vector control engine is available from today on Toshiba’s website.
Toshiba will continue to expand its product line-up with improved characteristics, to improve design flexibility, and to contribute to carbon neutrality through energy-saving motor control.
Applications
Brushless DC motors in home appliances
- Fan motors (air conditioner, air cleaner, ventilation fan, ceiling fan, etc.)
- Pumps
Features
- High power supply voltage rating to secure operation margin for power supply voltage fluctuations: VBB=600V
- Small package
Through hole type HDIP30: 32.8mm×13.5mm (typ.), t=3.525mm (typ.)
Original – Toshiba
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LATEST NEWS / PRODUCT & TECHNOLOGY / SiC / WBG3 Min Read
The Fraunhofer Institute for Solar Energy Systems ISE has developed and suc-cessfully commissioned the world’s first medium-voltage string inverter for large-scale power plants. By feeding power into the medium-voltage grid, the “MS-LeiKra” project team has demonstrated that PV inverters are technically capable of handling higher voltage levels.
The benefits for photovoltaics in-clude enormous cost and resource savings for passive components and cables. The device lays the foundation for a new system concept for the next genera-tion of large-scale PV power plants, which can also be applied to wind turbines, electric mobility and industrial applications.
Modern PV string inverters have an output voltage of between 400 VAC and 800 VAC. Although the output of power plants is steadily growing, voltage has not yet been increased. There are two reasons for this: First, building a highly efficient and compact inverter based on silicon semiconductors is a challenge. Second, there are currently no PV-specific standards that cover only the low-voltage range (max. 1,500 VDC / 1,000 VAC).
In a project funded by the German Federal Ministry for Economic Affairs and Climate Action (BMWK), Fraunhofer ISE, in collaboration with Siemens and Sumida, has developed an inverter that enables the output voltage to be increased to the medium-voltage range (1,500 V) at 250 kVA. The key to this is the use of silicon carbide semiconductors, which have a higher blocking voltage.
The research team has also implemented a more efficient cooling concept using heat pipes, which reduces the amount of aluminum required.
Thinner cables offer huge savings potential
An average photovoltaic power plant requires dozens of kilometers of copper cables. Increasing the voltage generates significant savings potential: At today’s possible output voltage of 800 VAC, a 250 kVA string inverter requires cables with a minimum cross section of 120 mm². By increasing the voltage to 1,500 VAC, the cable cross section can be reduced to 35 mm².
This in turn cuts copper consumption by around 700 kilograms per kilometer of cable. “Our resource analyses show that in the medium term, the electrification of the energy system will lead to copper becoming scarce. Increasing the voltage allows us to save valuable resources,” says Prof. Dr. Andreas Bett, Director of the Fraunhofer Institute for Solar Energy Systems ISE.
Standards need to change
With the “MS LeiKra” project, we are leaving the scope of low-voltage (<1000 VAC / <1500 VDC) standards. There are currently no PV-specific standards for this range. This is why the project team is also working on the standards that would result from increasing the voltage.
Finding a demo project partner
Having fed power into the medium-voltage grid successfully, the research team is now looking for solar farm developers and grid operators to test the power plant concept in the field.
Besides photovoltaics, moving beyond low voltage is also of interest for other applications, such as wind turbines, where the growing system capacities also require cables with large cross sections. The same is true for the charging infrastructure for large electric vehicles and vehicle fleets, and for industrial grids, where medium-voltage inverters could save a lot of material if cable cross sections could be reduced.
Original – Fraunhofer ISE
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LATEST NEWS / PRODUCT & TECHNOLOGY / Si2 Min Read
Toshiba Electronics Europe GmbH has launched a pair of automotive grade 40V N-channel power MOSFETs based upon their latest U-MOS IX-H process. The new devices use a new S-TOGLTM (Small Transistor Outline Gull-wing Leads) package that offers a number of advantages in automotive applications.
Automotive safety-critical applications such as steering, braking and autonomous driving systems generally require more devices than other systems to meet redundancy requirements. Here, a power MOSFET with high current density is required due to the size constraints within automotive equipment.
The new XPJR6604PB and XPJ1R004PB have a VDSS rating of 40V and the XPJR6604PB is rated for a continuous drain current (ID) of 200A (XPJ1R004PB = 160A). Both devices are rated for pulsed current (IDP) at 3x this value, 600A and 480A respectively. The 200A rating is higher than that achieved by Toshiba’s 6.5mm × 9.5mm DPAK+ package.
The new XPJR6604PB and XPJ1R004PB automotive MOSFETs use Toshiba’s innovative new S-TOGLTM package that measures just 7.0mm × 8.44mm × 2.3mm. The products are post-less and feature a multi-pin structure for the source leads that significantly decreases package resistance.
Combining the S-TOGLTM package with Toshiba’s U-MOS IX-H process gives the XPJR6604PB an on-resistance (RDS(ON) Compared to this device, the mounting area has reduced by around 55% compared while retaining the channel-to-case thermal resistance characteristics (Zth(ch-c)) – XPJR6604PB = 0.4ºC/W and XPJ1R004PB = 0.67ºC/W.
Many automotive applications are based in severely harsh environments, so the reliability of surface mount solder joints is a critical consideration. Toshiba’s S-TOGLTM package uses gull-wing leads that reduce mounting stress, improving the reliability of the solder joint.
Suited to harsh temperature environments, the MOSFETs are AEC-Q101 qualified and capable of operating at channel temperatures (Tch) as high as 175ºC.
Toshiba offers matched shipments for the devices, in which the gate threshold voltage range does not exceed 0.4V for each reel. This facilitates designs with small characteristic variations for applications requiring parallel connectivity for high-current operation.
Original – Toshiba
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LATEST NEWS / PRODUCT & TECHNOLOGY / Si / SiC / WBG1 Min Read
Designing state-of-the-art heat pumps and HVAC systems is not easy. Finding a way to overcome demands, such as giving more power in a smaller footprint requires a lot from a power module.
Vincotech’s new 1200 V PIM+PFC is the answer. Its integrated three-phase ANPFC and inverter stage resolve contradiction to boost efficiency and cut systems costs. More compact designs at higher power ranges is not a problem any more.
Samples are available through our usual channels.
Main benefits
- All-in-one solution: 3-phase PFC with inverter stage in a compact flow1 housing allows for more compact designs and higher power density
- High efficient AN-PFC topology with SiC diodes for switching frequencies up to 150 kHz reduces systems costs
- High speed IGBT’s in the inverter stage for high switching frequency operation
- Thin Al2O3 substrate eases the system’s thermal design
- Integrated thermal sensor simplifies temperature measurement
Applications
- Embedded drives
- Industrial drives
Original – Vincotech
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LATEST NEWS / PRODUCT & TECHNOLOGY / Si1 Min Read
Micro Commercial Components introduced the latest auto-grade MOSFET in the TOLL package for today’s demanding e-mobility applications. AEC-Q101 qualified and ready to empower auto designs, MCC’s100V MCTL300N10YHE3 MOSFET delivers exceptional performance and unmatched reliability for a range of systems, including battery management systems, motor drives, and interior or exterior LED lighting.
Designed with split-gate trench (SGT) technology, this component features low on-resistance and high current density to maximize efficiency while handling power loads. It’s also a great replacement for traditional MOSFETs due to its enhanced performance. The innovative TOLL-8 package provides design flexibility due to its compact footprint and optimal heat dissipation to ensure safe operation in high-temperature environments.
Fully RoHS compliant, MCTL300N10YHE3 is the ideal solution for automotive applications.
Features & Benefits:
- Exceptional performance and reliability
- AEC-Q101 qualified
- SGT technology for improved performance
- Low on-resistance for enhanced efficiency
- High current density capabilities
- Low-profile TOLL package saves design space
- Excellent heat dissipation for reliable operation in high temperatures
- Halogen-free and lead-free finish for environmental friendliness and compliance with RoHS regulations
Original – Micro Commercial Components
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Magnachip Semiconductor Corporation announced the launch of two new 150V MXT MV Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), using its 8th-generation trench MOSFET technology.
Energy efficiency is crucial in high-power devices for reducing power consumption and ensuring stability. These newly released 8th-generation 150V MXT MV MOSFETs (MDES15N056PTRH, MDU150N113PTVRH) were developed by leveraging Magnachip’s cutting-edge trench MOSFET technology. In particular, the RDS(on) (the resistance value between the drain and the source of MOSFETs during on-state operation) of MDES15N056PTRH was reduced by 22% compared to the previous generation, thereby significantly enhancing energy efficiency in applications.
By improving the core cell and termination design, the Figure of Merit (FOM: RDS(on) x Qg) of MDES15N056PTRH and MDU150N113PTVRH has been improved by 23% and 39%, respectively, compared to the previous version. Furthermore, the adoption of surface-mount type packages, such as D2PAK-7L (TO-263-7L) and PDFN56, reduces MOSFET sizes, enabling flexible design of various applications, such as motor controllers, battery management systems (BMSs), residential solar inverters and industrial power supplies.
“Following the introduction of five 8th-generation 200V and 150V MOSFETs last year, we are pleased to now release two additional 150V MXT MV MOSFET product offerings in new packages,” said YJ Kim, CEO of Magnachip. “Magnachip will continue to expand its high-efficiency MXT MOSFET product portfolio, including new releases based on 180nm microfabrication technology in the near future.”
Original – Magnachip Semiconductor