-
STMicroelectronics has begun volume production of e-mode PowerGaN HEMT (high-electron-mobility transistor) devices that simplify the design of high-efficiency power-conversion systems. The STPOWER™ GaN transistors raise performance in applications such as wall adapters, chargers, lighting systems, industrial power supplies, renewable energy applications, and in automotive electrification.
The first two products in the family, the SGT120R65AL and SGT65R65AL, are industrial-qualified 650V normally-off G-HEMT™ in a PowerFLAT 5×6 HV surface-mount package. They have current ratings of 15A and 25A, respectively, with typical on-resistance (RDS(on)) of 75mΩ and 49mΩ at 25°C.
Also, 3nC and 5.4nC total gate charge and low parasitic capacitances ensure minimal turn-on/turn-off energy losses. A Kelvin source connection allows optimized gate driving. In addition to the reduced size and weight of the power supplies and adapters, the two new GaN transistors provide higher efficiency, lower operating temperature, and extended life time.
In the coming months, ST will introduce new PowerGaN variants, i.e. automotive-qualified devices, as well as additional power-package options including PowerFLAT 8×8 DSC and LFPAK 12×12 for high power applications.
ST’s G-HEMT devices facilitate the transition to GaN wide-bandgap technology in power conversion. GaN transistors with the same breakdown voltage and RDS(on) as silicon alternatives can achieve lower total gate charge and parasitic capacitances, with zero reverse-recovery charge.
These properties raise efficiency and enhance switching performance, allowing higher switching frequency that permits smaller passive components thereby increasing power density. Applications can therefore become smaller with higher performance. In the future, GaN is also expected to enable new power-conversion topologies that will further improve efficiency and decrease power losses.
Original – STMicroelectronics
-
STMicroelectronics’ first galvanically isolated gate driver for gallium-nitride (GaN) transistors, the STGAP2GS, trims dimensions and bill-of-materials costs in applications that demand superior wide-bandgap efficiency with robust safety and electrical protection.
The single-channel driver can be connected to a high-voltage rail up to 1200V, or 1700V with the STGAP2GSN narrow-body version, and provides gate-driving voltage up to 15V. Capable of sinking and sourcing up to 3A gate current to the connected GaN transistor, the driver ensures tightly controlled switching transitions up to high operating frequencies.
With minimal propagation delay across the isolation barrier, at just 45ns, the STGAP2GS ensures fast dynamic response. In addition, dV/dt transient immunity of ±100V/ns over the full temperature range guards against unwanted transistor gate change. The STGAP2GS is available with separate sink and source pins for easy tuning of the gate-driving operation and performance.
Saving the need for discrete components to provide optical isolation, the STGAP2GS driver eases the adoption of efficient and robust GaN technology in various consumer and industrial applications. These include power supplies in computer servers, factory-automation equipment, motor drivers, solar and wind power systems, home appliances, domestic fans, and wireless chargers.
In addition to integrating galvanic isolation, the driver also features built-in system protection including thermal shutdown and under-voltage lockout (UVLO) optimized for GaN technology, to ensure reliability and ruggedness.
Two demonstration boards, the EVSTGAP2GS and EVSTGAP2GSN, combine the standard STGAP2GS and narrow STGAP2GSN with ST’s SGT120R65AL 75mΩ, 650V enhancement-Mode GaN transistors to help users evaluate the drivers’ capabilities.
The STGAP2GS in SO-8 widebody package, and the STGAP2GSN SO-8 narrow version, are available now, priced from $1.42 for orders of 1000 pieces.
Please visit www.st.com/stgap2gs for more information.
Original – STMicroelectronics
-
Nexperia launched its entry to the insulated gate bipolar transistor (IGBT) market with a range of 600 V devices, starting with the 30A NGW30T60M3DF. By adding IGBTs to its extensive portfolio, Nexperia is addressing the growing demand for efficient, high-voltage switching devices with a range of performance and cost requirements.
These enable higher power density in power conversion and motor drive applications, including industrial motor drives like servo motors ranging from 5 to 20 kW (20 kHz), robotics, elevators, operating grippers, in-line manufacturing, power inverters, uninterruptible power supply (UPS), photovoltaic (PV) strings, EV-charging, and induction heating and welding.
IGBT is a relatively mature technology. Nonetheless, the market for these devices is expected to grow in line with the increased adoption of solar panels and electric vehicle (EV) chargers. Nexperia’s 600 V IGBTs feature a robust, cost-effective carrier-stored trench-gate advanced field-stop (FS) construction, providing exceptionally low conduction and switching loss performance with high levels of ruggedness in operating temperatures up to 175°C. This improves the efficiency and reliability of power inverters, induction heaters, welding equipment and industrial applications like motor drives and servos, robotics, elevators, operating grippers, and in-line manufacturing.
Designers can choose between the medium speed (M3) and high speed (H3) series IGBTs. These IGBTs have been designed with very tight parameter distributions, allowing multiple devices to connect safely in parallel. In addition, lower thermal resistance than competing devices enables them to provide higher output power. These IGBTs are also fully rated as soft fast reverse-recovery diodes. This means they are suitable for rectifier and bi-directional circuit applications or to protect against overcurrent conditions.
“With the release of these IGBTs, Nexperia provides designers with a greater choice of power-switching devices for a broad range of power applications”, according to Dr. Ke Jiang, General Manager Business Group Insulated-Gate Bipolar Transistors & Modules at Nexperia. “IGBTs are the ideal complement to Nexperia’s existing range of CMOS and wide-bandgap switching devices, making Nexperia a one-stop-shop for power electronics designers.”
These IGBTs are available in a standard, lead-free, TO247-3L package and are HV-H3TRB qualified for outdoor applications. Nexperia plans to follow this release with a series of 1200 V IGBTs. To learn more about Nexperia’s IGBTs, visit: https://www.nexperia.com/igbts
Original – Nexperia
-
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “TPH3R10AQM,” a 100V N-channel power MOSFET fabricated with Toshiba’s latest-generation process, U-MOS X-H. The product targets applications such as switching circuits and hot swap circuits on the power lines of industrial equipment used for data centers and communications base stations.
TPH3R10AQM has industry-leading 3.1mΩ maximum drain-source On-resistance, 16% lower than Toshiba’s 100V product, “TPH3R70APL,” which uses the earlier generation process. By the same comparison, TPH3R10AQM has expanded its safe operating area by 76% making it suitable for linear mode operation. Reducing the On-resistance and expanding the linear operating range in the safe operating area reduce the number of parallel connections. Furthermore, its gate threshold voltage range of 2.5V to 3.5V, makes it less likely to malfunction due to gate voltage noise.
The new product uses the highly footprint compatible SOP Advance(N) package.Toshiba will continue to expand its line-up of power MOSFETs that can increase the efficiency of power supplies by reducing loss, and help lower equipment power consumption.
Applications
- Power supplies for communications equipment such as for data centers and communications base stations
- Switching power supplies (High efficiency DC-DC converters, etc.)
Features
- Featuring Industry-leading excellent low On-resistance: RDS(ON)=3.1mΩ (max) (VGS=10V)
- Wide safe operating area
- High channel temperature rating: Tch (max)=175°C
Original – Toshiba
-
Kulicke and Soffa Industries, Inc. announced the launch of several new systems and capabilities serving high-volume semiconductor and fast-growing power-semiconductor applications.
POWERCOMM™ and POWERNEXX™ represent the next evolution in advanced wire bonding systems and are designed with a new generation of intuitive advanced process capabilities which deliver maximum levels of performance, efficiency, and productivity. Additionally, both systems deliver enhanced mean time between assists (MTBA), with automated recovery features that improve the machine to operator ratio and better support localization of semiconductor assembly.
The POWERCOMM™ advanced wire bonding solution is designed to support high-volume discrete and low-pin count devices commonly used in applications such as data centers, automotive, industrial automation, smartphones, wearables and connected devices.
The POWERNEXX™ advanced wire bonding solution is optimized for higher density QFN packages with widths of up to 100mm. The improved illumination design on POWERNEXX™ allows faster alignment time through its Pattern Recognition System (PRS). Faster alignment and advanced process capabilities deliver the industry leading UPH and lowest Cost-of-Ownership.
In addition to the new POWERCOMM™ and POWERNEXX™ systems, K&S extends its leadership in wedge bond applications with new High-Power-Interconnect (HPI) capabilities addressing the emerging needs of power devices. HPI capabilities are becoming increasingly necessary to assemble applications such as inverters, battery assembly and charging infrastructure which support the growth and increasing efficiency requirements of sustainable energy and electric vehicle applications. The need for more efficient and higher-current applications are driving rapid changes to the power semiconductor market by increasing demand in emerging compound semiconductors, such as Silicon Carbide (SiC) and Gallium Nitride (GaN), but are also demanding new capabilities to support next-generation battery assembly and are accelerating the transition from aluminum wire and ribbon, to copper wire and ribbon. Next generation HPI capabilities are being introduced across Kulicke & Soffa’s leading wedge bonder portfolio today.
“Our rich history of innovation and ongoing development priorities are enabling us to provide additional value to the increasingly critical assembly process. This recent set of new wire bonding systems and capabilities will better enable customers to optimize productivity, improve material handling capabilities and significantly lower cost-of-ownership,” said Shawn Sarbacker, Kulicke and Soffa’s Vice President of Ball Bonder Business Unit.
Original – Kulicke and Soffa Industries
-
Bourns, Inc. announced its first 650 V – 1200 V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs). The Bourns® SiC SBD line consists of six models engineered to provide excellent current carrying and thermal capabilities and high power density for increased performance and reliability. These capabilities make Bourns® SiC SBDs optimal high efficiency power conversion solutions for the growing variety of high frequency applications that need to meet reduced size and lower system cost requirements.
Telecom/Server Switched-Mode Power Supplies (SMPS), photovoltaic inverters, PC power and motor drives are a few of the applications that can benefit from the features provided in the Bourns® BSD Series SiC SBDs.
To address ongoing design demands for ever higher power efficiency, Bourns® SiC SBDs feature low forward voltage (VF) and high thermal conductivity, which increases efficiency while lowering power dissipation, satisfying application requirements of 650 V and 1200 V solutions.
The series also has no reverse recovery current to reduce EMI, enabling these SiC SBDs to significantly lower energy losses. In addition to offering 650 V to 1200 V operation with currents in the 6-10 A range, the six new BSD models of wide band gap diodes from Bourns offer designers various forward voltage, current and package options including TO220-2, TO247-3, TO252, and DFN8x8.
The six Bourns® Model BSD SiC SBDs are available now. These models are RoHS compliant, halogen free, Pb free and their epoxy potting compound is flame retardant to the UL 94V-0 standard.
For more detailed product information, please see: www.bourns.com/products/diodes/silicon-carbide-sic-schottky-barrier-diodes
Original – Bourns
-
Diodes Incorporated announced a further enhancement of its wide-bandgap product offering with the release of the DMWSH120H90SM4Q and DMWSH120H28SM4Q automotive-compliant Silicon Carbide (SiC) MOSFETs. These N-channel MOSFETs respond to the increasing market demand for SiC solutions that enable better efficiency and higher power density in electric and hybrid-electric vehicle (EV/HEV) automotive subsystems like battery chargers, on-board chargers (OBC), high-efficiency DC-DC converters, motor drivers, and traction inverters.
The DMWSH120H90SM4Q operates safely and reliably up to 1200VDS with a gate-source voltage (Vgs) of +15/-4V and has an RDS(ON) of 75mΩ (typical) at 15Vgs. This device is designed for OBCs, automotive motor drivers, DC-DC converters in EV/HEV, and battery charging systems.
The DMWSH120H28SM4Q operates at up to 1200VDS, +15/-4Vgs, and has a lower RDS(ON) of 20 mΩ (typical) at 15Vgs. This MOSFET has been designed for motor drivers, EV traction inverters, and DC-DC converters in other EV/HEV subsystems. Low RDS(ON) enables these MOSFETs to run cooler in applications that require high power density.
Both products have low thermal conductivity (RθJC=0.6°C/W), enabling drain currents up to 40A in the DMWSH120H90SM4Q and 100A in the DMWSH120H28SM4Q. They also have fast intrinsic and robust body diodes with low reverse recovery charge (Qrr) of 108.52nC in the DMWSH120H90SM4Q and 317.93nC in the DMWSH120H28SM4Q. This enables them to perform fast switching with reduced power losses.
By using the planar manufacturing process, Diodes has created new MOSFETs that offer more robust and reliable performance in automotive applications—and with increased drain current, breakdown voltage, junction temperature, and power rings as compared to previously released versions. The devices are available in a TO247-4 (Type WH) package, which offers an additional Kelvin sense pin. This can be connected to the source to optimize switching performance, enabling even higher power densities.
Original – Diodes Incorporated
-
Infineon presents its new generation of 1200 V CoolSiC™ MOSFETs in TO263-7 for automotive applications. The automotive-graded silicon carbide (SiC) MOSFET generation offers high power density and efficiency, enables bi-directional charging and significantly reduces system cost in on-board charging (OBC) and DC-DC applications.
The 1200 V CoolSiC family member offers best-in-class switching performance through 25 percent lower switching losses compared to the first generation. This improvement in switching behavior enables high-frequency operation, leading to smaller system sizes and increased power density. With a Gate-source threshold voltage (V GS(th)) greater than 4 V and a very low Crss/ Ciss ratio, reliable turn-off at V GS = 0 V is achieved without the risk of parasitic turn-ons. This allows for unipolar driving, resulting in reduced system cost and complexity. In addition, the new generation features a low on resistance (R DS(on)), reducing conductive losses over the whole temperature range of -55°C to 175°C.
The advanced diffusion soldering chip mount technology (.XT technology) significantly improves the package’s thermal capabilities, lowering the SiC MOSFET junction temperature by 25 percent compared to the first generation.
Moreover, the MOSFET has a creepage distance of 5.89 mm, meeting 800 V system requirements and reducing coating effort. Infineon is offering a range of R DS(on) options to cater to diverse application demands, including the only 9 mΩ type in the TO263-7 package currently on the market.
Original – Infineon Technologies
-
Mitsubishi Electric Corporation announced that it will begin shipping samples of its new NX-type full-SiC (silicon carbide) power semiconductor module for industrial equipment on June 14. The module, which reduces internal inductance and incorporates a second-generation SiC chip, is expected to contribute to the realization of more efficient, smaller and lighter-weight industrial equipment.
Power semiconductors are increasingly being utilized to convert electric power extra efficiently and thereby help to lower the carbon footprint of global society. Expectations are particularly high for SiC power semiconductors because of their capability to significantly reduce power loss. The demand is expanding for high-power, high-efficiency power semiconductors capable of improving the power-conversion efficiency of components such as inverters used in industrial equipment.
Mitsubishi Electric began releasing power semiconductor modules equipped with SiC chips in 2010. The new module, which features a low-loss SiC chip and optimized electrode structure, reduces internal inductance by 47% compared to its existing predecessor, enabling reduced power loss. Development of this SiC product have been partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO).
Original – Mitsubishi Electric
-
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has expanded its line-up of N-channel power MOSFETs fabricated with the latest-generation process, with a 600V super junction structure suitable for data centers, switching power supplies, and power conditioners for photovoltaic generators. The new product, “TK055U60Z1,” is the first 600V product in the DTMOSVI series.
By optimizing the gate design and process, 600V DTMOSVI series products reduce drain-source On-resistance per unit area by approximately 13%, and drain-source On-resistance × gate-drain charge, the figure of merit for MOSFET performance, by approximately 52%, compared to Toshiba’s current generation DTMOSIV-H series products with the same drain-source voltage rating. This ensures the series achieve both low conduction loss and low switching loss, and helps to improve efficiency of the switching power supplies.
The new product is housed in a TOLL package that allows Kelvin connection of its signal source terminal for the gate drive. The influence of inductance in the source wire in the package can be reduced to accentuate the high-speed switching performance of the MOSFET, which suppresses oscillation during switching.
Toshiba will continue to expand its 600V DTMOSVI series line-up, and its already released 650V DTMOSVI series products, and support energy conservation by reducing power loss in switching power supplies.
