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A cross-organizational team from Rigaku SE and Fraunhofer IISB has established a new semicon-ductor material characterization method in their jointly operated Center of Expertise for X-ray Topography in Erlangen, Germany. They succeeded not only in developing an industry-ready X-ray topography system, but also in employing defect detection and quantification algorithms, achieving a worldwide unique material characterization method for silicon carbide (SiC) wafers.
SiC is an excellent semiconductor for application areas like electric mobility and transportation, sustainable energy supply, industrial infrastructure up to sensors and quantum technologies even under harsh operating conditions.
As representatives for the whole research team, Dr. Kranert and Dr. Reimann from Fraunhofer IISB and Dr. Hippler, Managing Director Rigaku Europe SE, have won the Georg Waeber Innovation Award 2023 from the Förderkreis für die Mikroelektronik e.V. (Microelectronics Promotion Society).
Pioneering holistic material defect characterization with X-ray topography
In 2021, Rigaku SE and Fraunhofer IISB have founded the Center of Expertise for X-ray Topography, a joint lab that is located at the IISB’s headquarters in Erlangen, Germany. Here, the cross-organizational team has now developed a new metrology that is non-destructive, robust, reliable, high-throughput and therefore capable of swiftly detecting all relevant crystallographic defects in SiC substrates.
For the first time worldwirde, this innovation realized the holistic approach of setting up the measurement device, i.e., the X-ray topography (XRT) tool as well as formulating appropriate measurement and analysis routines that specifically meet the industry’s demands for speed, reliability, and accuracy. The development process was supported by rigorous scientific validation of the results, a crucial factor for the acceptance of a new approach in the industry.
Until now, no such industry-ready metrology existed for the early stages of SiC power electronics manufacturing, especially at substrate or crystal (commonly referred to as the “puck”) level. This breakthrough in SiC substrate inspection makes it no longer necessary to, e.g., destructively defect etch and discard semiconductor substrates for characterization, as is currently often the case. In consequence, the developed XRT metrology is superior to these existing substrate characterization methods employed in the industry, ultimately leading to substantial cost savings.
Effectively, this technology, developed in Germany, provides everything needed to become the industry standard for specifying and controlling substrate quality in production as well as for R&D substrate and device manufacturers worldwide. The success of this joint innovation is vividly illustrated by the new business, which Rigaku has successfully established in less than two years. Now, the Japan-based company is the world’s leading supplier of XRT tools for SiC substrate and device manufacturing.
The innovative metrology approach has been driven significantly by Dr. Michael Hippler, Managing Director of Rigaku Europe SE, and Dr. Christian Kranert with Dr. Christian Reimann, both group managers in the Fraunhofer IISB’s Materials department. Hence the scientists were selected for the Georg Waeber Innovation Award 2023 by the Förderkreis für die Mikroelektronik e.V. (Microelectronics Promotion Society).
The Förderkreis is an association of industry companies, two Fraunhofer institutes, four chairs of the University of Erlangen-Nuremberg and the Nuremberg Chamber of Commerce and Industry. The main objective is to foster a smooth exchange between science and industry, which is manifested in the Georg Waeber Innovation Award. The award is presented annually for outstanding scientific achievements and places a strong emphasis on the advancement of knowledge in microelectronics and its practical application in the industry. On October 25, 2023, Dr. Hippler, Dr. Reimann and Dr. Kranert received the award during a ceremony at Fraunhofer IISB in Erlangen.
Paving the way for the next generation of SiC power electronics
SiC semiconductor devices play a pivotal role in the power electronics industry. As a replacement for conventional silicon-based power electronics, SiC has the potential to enhance energy efficiency while reducing system costs. It is relevant across various application areas from electric mobility and transportation, sustainable energy supply, industrial infrastructure up to sensors and quantum technologies even under harsh operating conditions.
Consequently, processing low-cost, energy-efficient, and highly reliable SiC power devices is a critical endeavor with the worldwide electrification trend. The production capacities for SiC wafers experience significant growth, which goes hand in hand with an increasing demand for wafer inspection and metrology within the SiC industry. In particular, manufacturers of substrates and power devices require precice information regarding the quality of substrates in terms of crystallographic defects, their distribution across the entire wafer area, and absolute quantities.
Original – Fraunhofer IISB
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Power Integrations released the world’s highest-voltage, single-switch gallium-nitride (GaN) power supply IC, featuring a 1250-volt PowiGaN™ switch. InnoSwitch™3-EP 1250 V ICs are the newest members of Power Integrations’ InnoSwitch family of off-line CV/CC QR flyback switcher ICs, which feature synchronous rectification, FluxLink™ safety-isolated feedback and an array of switch options: 725 V silicon, 1700 V silicon carbide, and PowiGaN in 750 V, 900 V and now 1250 V varieties.
The switching losses for Power Integrations’ proprietary 1250 V PowiGaN technology are less than a third of that seen in equivalent silicon devices at the same voltage. This results in power conversion efficiency as high as 93 percent – enabling highly compact flyback power supplies that can deliver up to 85 W without a heatsink.
Radu Barsan, vice president of technology at Power Integrations, said: “Power Integrations continues to advance the state of the art in high-voltage GaN technology development and commercial deployment, rendering even the best high-voltage silicon MOSFETs obsolete along the way. We were first to market with high-volume shipments of GaN-based power-supply ICs in 2019, and earlier this year introduced a 900-volt version of our GaN-based InnoSwitch products.
Our ongoing development of higher voltage GaN technology, illustrated here by our new 1250 V devices, extends the efficiency benefits of GaN to an even wider range of applications, including many currently served by silicon-carbide technology.”
Designers using the new InnoSwitch3-EP 1250 V ICs can confidently specify an operating peak voltage of 1000 V, which allows for industry-standard 80 percent de-rating from the 1250 V absolute maximum. This provides significant headroom for industrial applications and is particularly valuable in challenging power grid environments where robustness is an essential defense against grid instability, surge and other power perturbations.
Original – Power Integrations
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High surge currents have met their match in our 2200V rectifier, GP12022. This high-voltage standard recovery rectifier is designed for demanding industrial applications and harsh conditions.
With impressive features, including a forward current capability of 120A and a low forward voltage of 1.2V, this component maximizes efficiency in power conversion while minimizing energy losses.
MCC’s rectifier utilizes the compact yet powerful TO-264P package with a high creepage 2-pin design to ensure safety and reliability. Thermal performance and efficiency are built in, with the ability to easily be mounted on a heatsink for optimal heat dissipation and streamlined installation.
All these features add up to superior operation you can count on in harsh environments. But GP12022 is actually eco-friendly thanks to RoHS compliance, a lead-free finish, and halogen-free design.
Level up your high-voltage industrial designs with the MCC’s 2200V standard recovery rectifier.
Features & Benefits:
- High forward surge current capability excels in demanding conditions
- Low forward voltage minimizes energy losses
- High creepage 2-pin TO-264P package enhances safety
- Ideal for high-temp applications
- Easy mounting to heatsink for faster installation
- Excellent thermal properties
- Halogen-free with lead-free finish
- RoHS compliant
Original – Micro Commercial Components
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Magnachip Semiconductor Corporation announced that the Company released its 6th-generation 600V Super Junction Metal Oxide Semiconductor Field Effect Transistor (SJ MOSFET) enhanced with microfabrication technology.
This 6th-generation 600V SJ MOSFET (MMD60R175S6ZRH) was built on the 180nm microfabrication process and Magnachip’s latest design technology. This sophisticated technology improves upon the previous generation of SJ MOSFETs by narrowing the cell-pitches by 50% and lowering the RDS(on) (On resistance: the resistance value between the drain and the source of MOSFETs during on-state operation) by 42%. As a result, this product comes in the same Decawatt Package (DPAK), while offering the low RDS(on) of 175mΩ and outstanding power density.
Furthermore, the total gate charge is lowered by approximately 29% compared to the previous generation, resulting in reduced switching loss and enhanced power efficiency. The power efficiency is in fact one of the key features of this product, as it gives product designers flexibility with regards to various applications. In addition, a Zener diode is embedded between the gate and the source to strengthen the ruggedness and reliability of the MOSFET in an application and prevent it from sustaining damage caused by external surges or electrostatic discharges.
With its high efficiency, flexible design and reliability, this new 600V SJ MOSFET can be used in a wide range of applications, such as servers, OLED TVs and laptop fast chargers. Omdia, a global market research firm, estimates that worldwide server shipments will grow by 8% annually from 2023 to 2027, while global OLED TV shipments will increase 11% every year, reaching a total of 9.3 million units in 2027.
“Following the launch of this MOSFET, Magnachip plans to unveil additional 6th-generation SJ MOSFETs, including those with a fast recovery body diode, in 2024,” said YJ Kim, CEO of Magnachip. “Aligned with customer demand, our technical innovation will further strengthen our industry presence and global market penetration.”
Original – Magnachip Semiconductor
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Transphorm, Inc. introduced the SuperGaN® TOLT FET. With an on-resistance of 72 milliohms, the TP65H070G4RS transistor is the industry’s first top-side cooled surface mount GaN device in the JEDEC-standard (MO-332) TOLT package. The TOLT package offers flexibility of thermal management to customers where system requirements do not allow for the more conventional surface mount devices with bottom-side cooling.
The thermal performance of the TOLT is similar to that of the widely used, thermally robust TO-247 through-hole packages and delivers the added benefit of highly efficient manufacturing processes enabled by SMD-based printed circuit board assembly (PCBA).
The TP65H070G4RS leverages Transphorm’s robust, high performance 650-volt normally-off d-mode GaN platform offering improved efficiency over silicon, silicon carbide, and other GaN offerings via lower gate charge, output capacitance, crossover loss, reverse recovery charge, and dynamic resistance.
The SuperGaN platform advantages combined with the TOLT’s better thermals and system assembly flexibility results in a high performance, high reliability GaN solution for customers seeking to bring to market power systems with higher power density and efficiency at an overall lower power system cost.
Transphorm is engaged with multiple global partners for high power GaN, including lead customers in server and storage power, a global leader in the energy/microinverter space, an innovative manufacturer of off-grid power solutions, and a leader in satellite communications.
“Surface mount devices such as the TOLL and the TOLT offer various benefits such as lower internal inductance as well as simpler board mounting during manufacturing. The TOLT adds to that more flexible overall thermal management with through-hole like thermal performance by using top-side cooling,” said Philip Zuk, SVP Business Development and Marketing, Transphorm.
“These devices are commonly found in mid to high power system applications for key market segments including high performance computing (Server, Telecom, AI Power), Renewables and Industrial, and Electric Vehicles, some of which our GaN technology already powers today. we’re very excited to enable our customers to realize additional system level benefits with TOLT SuperGaN solutions.”
Today’s product release comes on the heels of Transphorm’s recent introduction of its three new TOLL FETs. Addition of the TOLT expands the company’s product offerings yet again. Its availability highlights Transphorm’s commitment to supporting customer preferences by making its SuperGaN platform accessible in various packages across the widest power range.
Device Specifications
SuperGaN devices lead the market with unmatched:- Reliability at < 0.05 FIT
- Gate safety margin at ± 20 V
- Noise immunity at 4 V
- Temperature coefficient of resistance (TCR) at 20% lower than e-mode normally-off GaN
- Drive flexibility with standard off-the-shelf silicon drivers
The robust 650 V SuperGaN TOLT device is JEDEC qualified. Because the normally-off d-mode platform pairs the GaN HEMT with an integrated low voltage silicon MOSFET, the SuperGaN FETs are easy to drive with commonly used off-the-shelf gate drivers. They can be used in various hard- and soft-switching AC-to-DC, DC-to-DC, and DC-to-AC topologies to increase power density while reducing system size, weight, and overall cost.
Part Dimensions (mm) RDS(on) (mΩ) typ RDS(on) (mΩ) max Vth (V) typ Id (25°C) (A) max TP65H070G4RS 10 x 15 72 85 4 29 Original – Transphorm
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Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two products of 600V small intelligent power device (IPD) for brushless DC motor drive applications such as air conditioners, air cleaners, and pumps. Volume shipments of “TPD4163K” and “TPD4164K,” which have output current (DC) ratings of 1A and 2A, respectively, start today.
Both new products are housed in a through hole type HDIP30 package, which reduces the mounting area by approximately 21% against Toshiba’s previous products. This helps reduce the size of motor drive circuit boards.
As power supply voltage may fluctuate significantly in regions with unstable power supply, the voltage has been increased from the 500V of Toshiba’s previous products[1] to 600V, which improves reliability.
A “Reference Design for Sensorless Brushless DC Motor Drive Circuit” that utilizes the functions of the new TPD4164K with a TMPM374FWUG microcontroller with vector control engine is available from today on Toshiba’s website.
Toshiba will continue to expand its product line-up with improved characteristics, to improve design flexibility, and to contribute to carbon neutrality through energy-saving motor control.
Applications
Brushless DC motors in home appliances
- Fan motors (air conditioner, air cleaner, ventilation fan, ceiling fan, etc.)
- Pumps
Features
- High power supply voltage rating to secure operation margin for power supply voltage fluctuations: VBB=600V
- Small package
Through hole type HDIP30: 32.8mm×13.5mm (typ.), t=3.525mm (typ.)
Original – Toshiba
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MCC Semi expanded its growing auto-grade portfolio with three new 60V N-channel MOSFETs: MCU75N06YHE3-TP, MCG60N06YHE3-TP, and MCAC65N06YHE3-TP.
Leveraging split-gate trench (SGT) MOSFET technology, MCC’s new products deliver optimal performance, efficiency, and thermal management, making them the intelligent choice for a range of demanding auto applications.
With on-resistance as low as 4.8mΩ, these AEC-Q101 qualified MOSFETs guarantee optimal power flow while significantly reducing power losses.
DFN333, DFN5060, and DPAK package options enable design flexibility and compatibility with various automotive systems.
Original – Micro Commercial Components
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STMicroelectronics has released the ACEPACK DMT-32 family of silicon carbide (SiC) power modules in a convenient 32-pin, dual-inline, molded, through-hole package for automotive applications. Targeted at systems such as on-board chargers (OBC), DC/DC converters, fluid pumps and air conditioning, they deliver advantages including high power density, very compact design, and simplified assembly. The product family enhances flexibility for system designers by presenting a choice of four-pack, six-pack, and totem-pole configurations.
The modules contain 1200V SiC power switches that leverage ST’s state-of-the-art, second- and third-generation SiC MOSFET technology ensuring low RDS(on) values. The devices deliver efficient switching performance with minimal dependence on temperature to ensure high efficiency and reliability at converter system level.
Leveraging ST’s proven, robust ACEPACK technology, the modules reduce overall system- and design-development costs while ensuring outstanding reliability. The package technology features a high-performance aluminum nitride (AlN) insulated substrate for excellent thermal performance. There is also an integrated NTC sensor that provides temperature monitoring for thermal protection.
The first product in ACEPACK DMT-32, introduced today with ramp-up to volume production since Q4’23, is M1F45M12W2-1LA. The M1F80M12W2-1LA, M1TP80M12W2-2LA, M1P45M12W2-1LA, M1P80M12W2-1LA, M1P30M12W3-1LA are sampling now with ramp-up to volume production starting from Q1’24.
Original – STMicroelectronics
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The Fraunhofer Institute for Solar Energy Systems ISE has developed and suc-cessfully commissioned the world’s first medium-voltage string inverter for large-scale power plants. By feeding power into the medium-voltage grid, the “MS-LeiKra” project team has demonstrated that PV inverters are technically capable of handling higher voltage levels.
The benefits for photovoltaics in-clude enormous cost and resource savings for passive components and cables. The device lays the foundation for a new system concept for the next genera-tion of large-scale PV power plants, which can also be applied to wind turbines, electric mobility and industrial applications.
Modern PV string inverters have an output voltage of between 400 VAC and 800 VAC. Although the output of power plants is steadily growing, voltage has not yet been increased. There are two reasons for this: First, building a highly efficient and compact inverter based on silicon semiconductors is a challenge. Second, there are currently no PV-specific standards that cover only the low-voltage range (max. 1,500 VDC / 1,000 VAC).
In a project funded by the German Federal Ministry for Economic Affairs and Climate Action (BMWK), Fraunhofer ISE, in collaboration with Siemens and Sumida, has developed an inverter that enables the output voltage to be increased to the medium-voltage range (1,500 V) at 250 kVA. The key to this is the use of silicon carbide semiconductors, which have a higher blocking voltage.
The research team has also implemented a more efficient cooling concept using heat pipes, which reduces the amount of aluminum required.
Thinner cables offer huge savings potential
An average photovoltaic power plant requires dozens of kilometers of copper cables. Increasing the voltage generates significant savings potential: At today’s possible output voltage of 800 VAC, a 250 kVA string inverter requires cables with a minimum cross section of 120 mm². By increasing the voltage to 1,500 VAC, the cable cross section can be reduced to 35 mm².
This in turn cuts copper consumption by around 700 kilograms per kilometer of cable. “Our resource analyses show that in the medium term, the electrification of the energy system will lead to copper becoming scarce. Increasing the voltage allows us to save valuable resources,” says Prof. Dr. Andreas Bett, Director of the Fraunhofer Institute for Solar Energy Systems ISE.
Standards need to change
With the “MS LeiKra” project, we are leaving the scope of low-voltage (<1000 VAC / <1500 VDC) standards. There are currently no PV-specific standards for this range. This is why the project team is also working on the standards that would result from increasing the voltage.
Finding a demo project partner
Having fed power into the medium-voltage grid successfully, the research team is now looking for solar farm developers and grid operators to test the power plant concept in the field.
Besides photovoltaics, moving beyond low voltage is also of interest for other applications, such as wind turbines, where the growing system capacities also require cables with large cross sections. The same is true for the charging infrastructure for large electric vehicles and vehicle fleets, and for industrial grids, where medium-voltage inverters could save a lot of material if cable cross sections could be reduced.
Original – Fraunhofer ISE
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Toshiba Electronics Europe GmbH has launched a pair of automotive grade 40V N-channel power MOSFETs based upon their latest U-MOS IX-H process. The new devices use a new S-TOGLTM (Small Transistor Outline Gull-wing Leads) package that offers a number of advantages in automotive applications.
Automotive safety-critical applications such as steering, braking and autonomous driving systems generally require more devices than other systems to meet redundancy requirements. Here, a power MOSFET with high current density is required due to the size constraints within automotive equipment.
The new XPJR6604PB and XPJ1R004PB have a VDSS rating of 40V and the XPJR6604PB is rated for a continuous drain current (ID) of 200A (XPJ1R004PB = 160A). Both devices are rated for pulsed current (IDP) at 3x this value, 600A and 480A respectively. The 200A rating is higher than that achieved by Toshiba’s 6.5mm × 9.5mm DPAK+ package.
The new XPJR6604PB and XPJ1R004PB automotive MOSFETs use Toshiba’s innovative new S-TOGLTM package that measures just 7.0mm × 8.44mm × 2.3mm. The products are post-less and feature a multi-pin structure for the source leads that significantly decreases package resistance.
Combining the S-TOGLTM package with Toshiba’s U-MOS IX-H process gives the XPJR6604PB an on-resistance (RDS(ON) Compared to this device, the mounting area has reduced by around 55% compared while retaining the channel-to-case thermal resistance characteristics (Zth(ch-c)) – XPJR6604PB = 0.4ºC/W and XPJ1R004PB = 0.67ºC/W.
Many automotive applications are based in severely harsh environments, so the reliability of surface mount solder joints is a critical consideration. Toshiba’s S-TOGLTM package uses gull-wing leads that reduce mounting stress, improving the reliability of the solder joint.
Suited to harsh temperature environments, the MOSFETs are AEC-Q101 qualified and capable of operating at channel temperatures (Tch) as high as 175ºC.
Toshiba offers matched shipments for the devices, in which the gate threshold voltage range does not exceed 0.4V for each reel. This facilitates designs with small characteristic variations for applications requiring parallel connectivity for high-current operation.
Original – Toshiba
