-
Diotec Semiconductor introduced SIT10C065 and SIT12C065 650 V single diodes in TO-220AC package. They offer 10 A and 12 A of average forward current. Both are ideally suited for high voltage / high frequency switching circuits, such as Power Factor Correction (PFC), high efficient solar inverters or data server power supplies.
Both devices feature a high reverse voltage of 650 V combined with an extremely low “reverse recovery” capacitive charge and thus discharging time. That makes it ideally suited for all applications, where high voltage levels are switched at very high frequencies.
Features
- High reverse voltage
- Almost zero switching losses
- Low reverse leakage current
- High efficiency high frequency switching
- Single diodes in industry standard case outline
Applications
- Solar inverters
- Data server power supplies
- Power Factor Correction (PFC)
Specifications
- 10 A /12 A average forward current (IFAV)
- 650 V repetitive reverse voltage (VRRM)
- Typical forward voltage 1.7 V at 10 A and 175°C (VF)
- Typical forward voltage 1.75 V at 12 A and 175°C (VF)
- Typical reverse leakage 20 µA at 650 V and 175°C (IR)
- Total capacitive charge 28 nC at 400 V, 10 A, 200 A/µs [QC)
- TO-220AC case outline
Original – Diotec Semiconductor
-
Leapers Semiconductor introduced a new 62 mm package SiC module product portfolio, achieving top-tier performance in the industry. The modules adopt the widely used 62 mm module half-bridge topology design in the industrial field, using high-quality mature chips. It boasts high voltage resistance, outstanding power density, high short-circuit tolerance, and a temperature coefficient 1.4 times better than industry standards.
The 62 mm SiC modules include voltage resistance specifications of 1200V and 1700V, meeting the demands of high-power applications, especially suitable for applications in the smart grid, rail transit, energy storage, and power supplies.
Because of the use of leading-edge chip solutions in the industry and the application of low thermal resistance and low stray capacitance packaging technology, along with the use of Si3N4 AMB low thermal resistance substrate, Leapers’ 62 mm SiC product excels in power density, short-circuit current withstand capability, thermal resistance, and other capabilities. Particularly under high junction temperature conditions, the module’s conduction and switching losses significantly outperform industry standards.
Technical Features:- Voltage resistance options: 1200V or 1700V
- Outstanding current output capability
- Temperature coefficient index better than industry standards
- Low losses, excellent short-circuit current withstand capability
- Si3N4 AMB, low thermal resistance
Currently, Leapers 62 mm SiC modules have undergone bench tests and received orders, involving applications such as grid inverters and auxiliary inverters for rail transit vehicles. Downstream customers include domestic power grid and overseas rail transit enterprises.Original – Leapers Semiconductor
-
The National Science Foundation has given a $300,000 grant to Xiaoqing Song, an assistant professor in the Electrical Engineering and Computer Science Department, to support his research project focused on advancing high density and high-operation-temperature traction inverters. Song’s project explores the integration of gallium oxide packaged power modules to enhance the power density and temperature range of electric vehicles.
Collaborating with the National Renewable Energy Laboratory, the project sets out to innovate power module packaging, establish reliable strategies for gallium oxide power devices and demonstrate the capabilities of a high density, high temperature traction inverter.
“By eliminating technical barriers for gallium oxide device integration, this project will foster the development of next-generation, high density and high-operation-temperature power converters,” Song said.
The traction inverter, responsible for converting stored direct current (DC) power into alternating current (AC) power to drive electric motors, stands to benefit significantly from gallium oxide technology. Song said, “Gallium oxide can make the traction inverter smaller, lighter, more efficient and capable of operating across a wider range of temperatures.
“Gallium oxide has a larger band gap energy compared to conventional silicon and wide band gap semiconductors. It enables high breakdown electrical strength, low intrinsic carrier concentration and correspondingly high operation temperatures,” Song said.
One challenge addressed in the project is the low thermal conductivity of gallium oxide, which hinders efficient heat removal. Song outlines the plan to develop advanced power module packaging techniques that enable low thermal resistance, low parasitic inductances and high-temperature operation capability.
“National Renewable Energy Laboratory (NREL) has significant experience in power module simulation, fabrication and characterization, as well as world-class experimental and lab capabilities for evaluating and designing efficient and reliable power electronics systems. The PI will collaborate with them to design and develop a gallium oxide-based high density and operation-temperature traction inverter for automotive applications. This project will help establish a long-term partnership with NREL that can catalyze further research and development of ultra-wide bandgap power semiconductor devices,” Song said.
Song shared that the collaboration with the National Renewable Energy Laboratory aims to design and develop a gallium oxide-based high density and high-operation-temperature traction inverter for automotive applications, fostering a long-term partnership that can drive further research in ultra-wide bandgap power semiconductor devices.
“Other applications include power grids, data centers, renewable energy, space and defense, etc.,” Song added.
The success of the project, he believes, will provide valuable insights into gallium oxide device modeling, packaging, gate driving, protection and application in power converters. These advancements are expected to catalyze progress in transport electrification and the deployment of gallium oxide technology in challenging environments.
“The research achievements and experiences gained in the fellowship will sustain and promote the PI’s future multi-disciplinary research activities in semiconductor devices, multiphysics analysis, power module packaging and high performance power electronics. Other broader impacts also include the education and development of the next generation workforce in STEM (science, technology, engineering and math), the encouragement of more women and underrepresented minorities in electrical engineering, especially in the area of wide and ultra-wide bandgap semiconductor devices, power module packaging and power electronics with hands-on lab experiences,” Song said.
Original – University of Arkansas
-
Power Integrations announced the release of the InnoSwitch™5-Pro family of high-efficiency, programmable flyback switcher ICs. The single-chip switcher achieves over 95 percent efficiency with a novel secondary-side control scheme which achieves zero-voltage switching (ZVS) without a dedicated and costly additional high voltage switch.
The new IC, which features a 750 V or a 900 V PowiGaN™ primary switch, primary-side controller, FluxLink™ isolated feedback and secondary controller with an I2C interface, optimizes the design and manufacture of compact, highly efficient single- or multi-port USB PD adapters. Applications are notebooks, high-end cellphones and other portable consumer products, including designs that require the new USB PD EPR (Extended Power Range) protocol.
Adnaan Lokhandwala, senior product marketing manager at Power Integrations said: “The combination of ZVS and GaN is power supply magic. Switching losses vanish, and we can leverage the low conduction losses of GaN to implement super dense adapter layouts with far fewer components than asymmetric half-bridge (AHB) circuits or active clamp alternatives. For example, we have demonstrated 140 W / 28 V USB PD adapters in 4.2 cubic inches using only 106 components. The flyback topology used by InnoSwitch5-Pro ICs is much easier to implement than AHB and can also operate from universal mains with or without a PFC stage.”
InnoSwitch5-Pro flyback switcher ICs feature lossless input line voltage sensing on the secondary side for adaptive DCM/CCM and ZVS control to maximize efficiency and simplify design across line and load. The ICs also feature a post-production tolerance offset to facilitate accurate output constant-current (CC) control of better than two percent to support the UFCS protocol.
Excellent efficiency – better than 95 percent – allows designers to eliminate heat sinks, spreaders and potting materials for thermal management, further reducing size, weight, component cost and manufacturing complexity. Key markets for the InnoSwitch5-Pro family of flyback switcher ICs include high-density USB PD 3.1 Extended Power Range (EPR), UFCS and multi-protocol adapters, notebook adapters and after-market single- and multi-port chargers and adapters.
Original – Power Integrations
-
PANJIT introduced new P-channel and N-channel MOSFETs designed to boost automotive electronic systems. The P-channel MOSFETs, with AEC-Q101 qualification and a high 175°C junction temperature, offer optimal choices for design engineers seeking reliability and simplified circuitry. These MOSFETs, minimizing RDS(ON) and maximizing avalanche ruggedness, are available in flexible packages (DFN3333-8L, DFN5060-8L, DFN5060B-8L, TO-252AA, TO-263, and TO-263-7L).
PANJIT’s N-channel power MOSFETs employ advanced trench technology, delivering excellent figure of merit (FOM), lower RDS(ON), and capacitance. Available in low-profile packages (DFN3333-8L, DFN5060-8L, DFN5060B-8L, TO-252AA), these MOSFETs contribute to efficient and reliable PCB layouts.
By combining innovation with reliability, PANJIT’s low voltage MOSFETs simplify power design circuitry, addressing the evolving needs of automotive design engineers.These components are a testament to PANJIT’s commitment to shaping the future of automotive electronics, offering optimal solutions for high-performance automotive applications.
Key Features of 30V & 40V Automotive-Grade P-Channel MOSFET:
• P-channel enhancement mode logic level MOSFETs
• Low RDS(ON) to minimize conduction losses
• Package with low thermal resistance
• 100% unclamped inductive switching (UIS) tested
• Electrostatic sensitive device (ESD) capable
• AEC-Q101 qualified and PPAP capable
• 175°C operating junction temperature
• Available in TO-263-7L PackageKey Features of 30V & 40V Automotive-Grade N-Channel MOSFET:
• 30V & 40V N-channel advanced trench
• Low RDS(ON) to minimize conduction losses
• Low FOM to minimize driver losses
• Standard and logic level available
• AEC-Q101 qualified and PPAP capable
• 175°C operating junction temperatureOriginal – PANJIT International
-
ROHM has added a lineup of compact 600V Super Junction MOSFETs R6004END4 / R6003KND4 / R6006KND4 / R6002JND4 / R6003JND4. These devices are ideal for small lighting power supplies, pumps, and motors.
In recent years, power supplies for lighting and motors for pumps are required to be smaller as devices become more sophisticated – spurring the demand for compact MOSFETs that are essential for switching operation.
Generally, however, it has been difficult to reduce the size of Super Junction MOSFETs while maintaining an optimal balance between high breakdown voltage and low ON resistance. In response, after reviewing the shape of the mounted chip, ROHM was able to develop 5 models in the SOT-223-3 package (6.50mm × 7.00mm × 1.66mm) – providing a smaller, lower profile form factor without compromising the performance of conventional products.
Compared to the conventional TO-252 package (6.60mm × 10.00mm × 2.30mm), ROHM’s new products reduce area and thickness by 31% and 27% – contributing to smaller, lower profile applications. At the same time, the same land pattern (footprint) as the TO-252 package can be used, enabling mounting on existing circuit boards without modification.
Offering distinctive features, three of the models optimized for compact power supplies. The R6004END4, characterized by low noise, is suitable for applications where noise is a concern, while the R6003KND4 and R6006KND4, capable of high-speed switching, are ideal for sets requiring low loss, high efficiency operation.
The R6002JND4 and R6003JND4 utilize proprietary PrestoMOS technology to achieve significantly lower switching losses by speeding up reverse recovery time (trr), making them well-suited for motors-equipped devices.
Supporting materials such as application notes, technical documents, and SPICE simulation models for each product are available on ROHM’s website free of charge to enable quick market introduction.
Going forward, ROHM will continue to expand its Super Junction MOSFET lineup in different packages and even lower ON resistances that contribute to solving social issues such as environmental protection by reducing power consumption in variety devices.
Product Lineup
For compact power supplies
Part No. Data
SheetPolarity
[ch]VDSS
[V]ID
[A]RDS(on) [Ω]
*VGS=10VQg [nC]
*VGS=10VPackage
[mm]Typ. Max. Typ. R6004END4 N 600 2.4 0.90 0.98 15 
SOT-223-3
(6.50×7.00×1.66)R6003KND4 1.3 1.30 1.50 8 R6006KND4 2.8 0.72 0.87 12 For motors
Part No. Data
SheetPolarity
[ch]VDSS
[V]ID
[A]RDS(on) [Ω]
*VGS=15VQg [nC]
*VGS=15Vtrr
[ns]Package
[mm]Typ. Max. Typ. Typ. R6002JND4 N 600 1.0 2.50 3.25 7 40
SOT-223-3
(6.50×7.00×1.66)R6003JND4 1.3 1.65 2.15 8 42 Application Examples
• R6004END4 / R6003KND4 / R6006KND4: Lighting, Air conditioners, Refrigerators, etc.
• R6002JND4 / R6003JND4: Motors for pumps, fans, copiers, etc.Original – ROHM
-
Alpha and Omega Semiconductor Limited (AOS) announced the AONA66916, a 100V MOSFET packaged in the company’s innovatively designed top and bottom side cooling DFN 5 x 6 package. Designers have long trusted AOS power semiconductors as essential components that help them meet a wide variety of high performance application requirements.
Now, in delivering a state-of-the-art package that keeps its semiconductor products cooler, AOS is taking a huge step in enabling engineers to develop more efficient designs in telecommunications and industrial applications that must frequently operate in harsh conditions.
Typically, when using the standard DFN 5×6 package, the bottom contact is the main contributor for cooling, and most of the heat generated by the Power MOSFETs will be transferred to the PCB. This increases the PCB thermal management design considerations to meet system requirements. AOS’ new top and bottom cooling DFN 5×6 package is designed to achieve the highest heat transfer between the exposed top contact and heat sink due to its large surface contact area construction.
This allows the device to achieve a low thermal resistance (Rthc-top max) of 0.5°C / W with results being transferred to the PCB board, enabling significant thermal performance improvements. The top exposed DFN 5×6 package of the AONA66916 shares the same 5mm x 6mm footprint as AOS’ standard DFN 5×6 package, eliminating the need to modify existing PCB layouts.
Another benefit of the AONA66916 is that it utilizes AOS’ 100V AlphaSGT™ technology, providing excellent FOM for balanced performance in hard switching applications. AONA66916 has a maximum RDS(on) rating of 3.4mOhms and has a 175°C junction temperature rating.
“Cooling the power MOSFET in high power design can be challenging, and AOS has successfully addressed this essential issue with our advanced top exposed package design. It not only enables better thermal transfer from its top side exposed contact to heat sink due to large exposed surface area, our new package delivers a much cooler device that contributes to a more efficient and robust final design,” said Peter H. Wilson, Marketing Sr. Director of the MOSFET product line at AOS.
Original – Alpha and Omega Semiconductor
-
Qorvo® unveiled an automotive-qualified silicon carbide (SiC) field effect transistor (FET) offering an industry-best 9mΩ RDS(on) in a compact D2PAK-7L package. This 750V SiC FET is the first in a new family of pin-compatible SiC FETs from Qorvo with RDS(on) options up to 60mΩ, making them well suited for electric vehicle (EV) applications, including on-board chargers, DC/DC converters and positive temperature coefficient (PTC) heater modules.
The UJ4SC075009B7S features a 9mΩ typical RDS(on) at 25°C needed for reducing conduction losses and maximizing efficiency in high voltage, multi-kilowatt automotive applications. Its small, surface-mount package enables automated assembly flows and reduces customer manufacturing costs. This new 750V family complements Qorvo’s existing 1200V and 1700V automotive SiC FETs in D2PAK packaging to form a complete portfolio addressing EV applications that span 400V and 800V battery architectures.
Ramanan Natarajan, director of Product Line Marketing for Qorvo’s Power Products, said, “The launch of this new family of SiC FETs demonstrates our commitment to providing EV powertrain designers the most advanced and efficient solutions for their unique automotive power challenges.”
These fourth generation SiC FETs leverage Qorvo’s unique cascode circuit configuration, in which a SiC JFET is co-packaged with a Si MOSFET to produce a device with the efficiency advantages of wide bandgap switch technology and the simpler gate drive of silicon MOSFETs. Efficiency in SiC FETs is dependent on conduction losses, and Qorvo’s cascode/JFET approach enables reduced conduction losses through industry-best RDS(on) and body diode reverse voltage drop.
The key features of the UJ4SC075009B7S include:
- Threshold voltage VG(th): 4.5V (typical) allowing 0 to 15V drive
- Low body diode VFSD: 1.1V
- Maximum operating temperature: 175°C
- Excellent reverse recovery: Qrr = 338 nC
- Low gate charge: QG = 75 nC
- Automotive Electronics Council (AEC) Q101-qualified
Original – Qorvo
-
MCC Semi launched the components engineered to satisfy the diverse requirements of demanding applications: eight low-profile Schottky barrier rectifiers with a common cathode configuration, low forward voltage, and countless possibilities.
A sleek and compact TO-263AC package delivers a typical height of only 1.7mm, translating to compatibility with the popular D2PAK footprint and seamless integration into existing designs.
Engineered to reduce power losses and optimize performance you can count on, these components are available in working voltage ranges from 45V to 200V and a forward current of 20A to 30A per device.
Ideal for freewheeling diodes, switch-mode power supplies, motor controls, and many other rugged applications, MCC’s selection of Schottky barrier rectifiers is a go-to solution when space is limited, but expectations are not.
Features & Benefits:
- Low forward voltage design minimizes power losses
- Low-profile TO-263AC package with a typical height of 1.7mm for space-saving performance
- Compatible with the popular D2PAK footprint for added versatility
- Wide working voltage range from 45V to 200V
- Forward current options of 20A and 30A per device
Original – Micro Commercial Components
-
Mitsubishi Electric Corporation announced the coming release of six new J3-Series power semiconductor modules for various electric vehicles (xEVs), featuring either a silicon carbide metal-oxide semiconductor field-effect transistor (SiC-MOSFET) or a RC-IGBT (Si), with compact designs and scalability for use in the inverters of electric vehicles (EVs) and plug-in hybrid electric vehicles (PHEVs). All six J3-Series products will be available for sample shipments from March 25.
The new power modules will be exhibited at the 38th Electronics R&D, Manufacturing and Packaging Technology Expo (NEPCON JAPAN 2024) from January 24 to 26 at Tokyo Big Sight, Japan, as well as other exhibitions in North America, Europe, China and additional locations.
As power semiconductors capable of efficiently converting electricity expand and diversify in response to decarbonization initiatives, the demand is increasing for SiC power semiconductors offering significantly reduced power loss. In the xEV sector, power semiconductor modules are used widely in power conversion devices such as inverters for xEV drive motors.
In addition to extending the cruising range of xEVs, compact, high-power, high-efficiency modules are needed to further downsize batteries and inverters. But due to the high safety standards set for xEVs, power semiconductors used in drive motors must be more reliable than those used in general industrial applications.
Development of these SiC products was partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO).
Original – Mitsubishi Electric
