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Alpha and Omega Semiconductor Limited (AOS) announced the release of its state-of-the-art automotive TO-Leadless (TOLL) package for the company’s automotive grade 80V and 100V MOSFETs. AOS’s TOLL package is developed to optimize the company’s power semiconductors as essential components in the evolution of e-mobility such as 2- and 3-wheel and other light vehicles. This new package helps designers meet the ongoing trend to electrify vehicles with the latest battery technology to meet clean energy zero-emission goals.
These capabilities make AOS 80V and 100V MOSFETs ideally suited for automotive BLDC motor and battery management applications for e-mobility. The AOS automotive TOLL package is designed to achieve the highest current capability using AOS’s innovative approach which utilizes advanced clip technology to achieve a high in-rush current rating.
In addition, AOS TOLL packaging with clip technology offers a very low package resistance and inductance, enabling improved EMI performance compared to other TOLL packages utilizing standard wire-bonding technology. With the combination of low ohmic and high current capability, utilizing AOS TOLL packaging also allows designers to reduce the number of parallel MOSFETs in high current applications. This, in turn, helps to enable higher power density requirements without compromising reliability in applications where robustness and reliability are key design objectives.
Providing a more compact solution for space-constrained designs, the AOTL66810Q (80V) and AOTL66912Q (100V) have a 30 percent smaller footprint compared to a TO-263 (D2PAK) package. These new devices in TOLL packaging are qualified to AEC-Q101, PPAP capable, and are manufactured in IATF 16949 certified facilities making them ideally suited for demanding application requirements in e-mobility. AOS TOLL devices are also compatible with automated optical inspection (AOI) manufacturing requirements.
“Using the AOS Automotive TOLL package with clip technology offers significant performance improvements in a robust package. The advanced technologies in our AOTL66810Q and AOTL66912Q MOSFETs will help simplify new designs allowing them to reduce the number of devices in parallel while providing the necessary higher current capability to enable overall system cost savings,” said Peter H. Wilson, Marketing Sr. Director of MOSFET product line at AOS.
Part Number VDS (V) VGS (±V) Continuous Drain Current (A) Pulsed Drain Current (A) RDS(ON) Max (mOhms) @10V @25°C @100°C @25°C AOTL66810Q 80 20 445 247 1780 1.25 AOTL66912Q 100 20 370 269 1480 1.7 Original – Alpha and Omega Semiconductor
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Toshiba Electronic Devices & Storage Corporation has launched two bipolar transistors “TTA2097 and TTC5886A” (with SC-63 package: Toshiba’s nickname is New PW-Mold), suitable for gate drive circuits in power devices, current switches in consumer equipment and industrial equipment, and LED drive circuits. The collector-emitter voltage rating and collector current (DC) rating of TTA2097 is -50 V/-5 A and that of TTC5886A is 50 V/5 A.
The new products TTA2097 and TTC5886A use small surface-mount type SC-63 package. Compared with Toshiba’s existing products with the same package, the new products have changed the wire material from gold to copper while the ratings and electrical characteristics are equivalent. This contributes to the reduction of environmental impacts. It is also easy to replace Toshiba’s existing products.
Toshiba will continue to expand its lineup of products that help reduce environmental impact.
Applications
Consumer equipment and industrial equipment
- Gate drive circuits for power devices
- Current switches
- LED drive circuits, etc.
Features
- Use of copper wire materials to reduce environmental impact
- Large collector current (DC) rating:
IC=-5 A (TTA2097)
IC=5 A (TTC5886A) - Small surface-mount type SC-63 package:
6.5 mm × 9.5 mm (typ.), t=2.3 ｍｍ (typ.)
Original – Toshiba
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Nexperia announced that its GaN FET devices, featuring next-gen high-voltage GaN HEMT technology in proprietary copper-clip CCPAK surface mount packaging, are now available to designers of industrial and renewable energy applications.
Building on two decades of expertise in supplying high-volume, high-quality copper-clip SMD packaging, Nexperia is now proud to extend its revolutionary packaging approach to GaN cascode switches in CCPAK. The GAN039-650NTB, a 33 mΩ (typ.) Gallium Nitride (GaN) FET within the CCPAK1212i top-side cooling package, ushers in a new era of wide bandgap semiconductors and copper-clip packaging.
This technology offers advantages for renewable energy applications such as solar and residential heat pumps, further enhancing Nexperia’s commitment to developing the latest component technology for sustainable applications. It is also suited to a wide spectrum of industrial applications such as servo drives, switched-mode power supplies (SMPS), server, and telecom.
Nexperia’s CCPAK surface mount packaging uses Nexperia’s proven innovative copper-clip package technology to replace internal bond wires. This reduces parasitic losses, optimizes electrical and thermal performance, and improves device reliability. For maximum flexibility in designs, these CCPAK GaN FETs are available in top- or bottom-cooled configurations to further improve heat dissipation.
The cascode configuration of the GAN039-650NTB enables it to deliver superior switching and on-state performance, with a robust gate offering high margins against noise. This feature also simplifies application designs by eliminating the requirement for complex gate drivers and control circuitry, instead allowing them to be conveniently driven using standard silicon MOSFET drivers.
Nexperia’s GaN technology improves switching stability and helps to shrink die size by approximately 24%. In addition, device RDS(on) is reduced to only 33 mΩ (typ.) at 25°C, with a high threshold voltage and low diode forward voltage.
“Nexperia recognizes that designers of industrial and renewable energy equipment need a highly robust switching solution that can provide excellent thermal efficiency when performing power conversion.”, according to Carlos Castro, Vice President and General Manager of the GaN FET business at Nexperia. “This is why Nexperia decided to bring together the exceptional switching performance of its cascode GaN FETs with the exceptional thermal properties of its CCPAK packaging to offer customers a compelling solution.”
Nexperia begins its CCPAK portfolio release with the top-cooled 33 mΩ (typ.), 650 V GAN039-650NTB, and will follow shortly with the bottom-cooled variant, GAN039-650NBB of the same RDS(on). More information including datasheets and samples is available at www.nexperia.com/ccpak.
Original – Nexperia
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Today some applications tend to increase bus voltage, and using 1200V SiC power modules can no longer correspond to voltage requirements. Using 1700V SiC devices can solve the problem, but it comes with a price.
Leapers Semiconductor announced a new series of 1400V SiC power modules in already familiar E0 and ED3S packages. They are the perfect solution to the mentioned problem, providing great performance at affordable price.
At the moment the new series 1400V SiC modules come in Half-Bridge, H-Bridge, and Boost topologies.
Leapers Semiconductor new SiC product family features:
– 1,4kV voltage
– 50 – 600A current
– 3,2 – 40 mOhm Rds(on)
– Epoxy resin
– Si3N4 AMB substrate
– Low thermal resistance
– Low switching lossesFirst batches of 1400V SiC power modules successfully passed field tests by the end customers and soon will be mass used in:
– DC fast chargers
– Commercial EVs
– Power supplies for production of hydrogen
– DC/DC convertersOriginal – Leapers Semiconductor
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Solitron Devices announced the introduction of the SD11487, the industry’s first hermetically sealed Silicon Carbide (SiC) Power Module for high reliability applications.
With a unique hermetic packaging format, the 51mm x 30mm x 8mm outline is the smallest hermetically sealed high reliability, high voltage, half-bridge on the market. The integrated format maximizes power density while minimizing loop inductance. 60 mil pins for the power output stage are isolated on one side of the package to allow simple power bussing while 30 mil pins are on the opposite side for control signals.
The SD11487 is a half bridge configuration with two 1200V 12mΩ SiC MOSFETs. Also included in the module are two freewheeling 1200V SiC Schottky diodes in parallel with the MOSFETs and an integrated NTC temperature sensor. Continuous drain current is specified at 95A.
With operating temperatures of -55°C to 175°C, the SD11487 is designed for the most demanding applications such as down hole exploration; space; and avionics. The hermetically sealed copper package combined with the Alumina Nitride direct bond copper substrate provide excellent thermal conductivity as well as case isolation. The integrated temperature sensing enables high level temperature protection.
Silicon Carbide provides excellent switching performance versus the best-in-class silicon MOSFETs and IGBTs with minimal variation versus temperature. Higher efficiency levels than silicon due to significantly lower energy loss and reverse charge results in more switching power and less energy required in the switch-on and switch-off phase. Combined with high switching frequencies this translates to smaller magnetics significantly reducing system weight and size.
Original – Solitron Devices
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Toshiba Electronic Devices & Storage Corporation has launched chopper SiC MOSFET modules “MG800FXF1ZMS3” and ”MG800FZF1JMS3” with ratings of 3300 V and 800 A using 3rd generation silicon carbide (SiC) MOSFET and SBD chips for industrial equipment and has expanded its lineup.
The new products MG800FXF1ZMS3 and MG800FXF1JMS3 adopt an iXPLV package with Ag sintering internal bonding technology and high compatibility with mounting. These offers low conduction loss with low drain-source on-voltage (sense) of 1.3 V (typ.), and also offers low switching loss with low turn-on switching loss of 230 mJ (typ.) and low turn-off switching loss of 230 mJ (typ.). These contribute to reducing the power loss of equipment and the size of cooling device.
The lineup of Toshiba’s MOSFET modules of iXPLV package has three products, including existing product MG800FXF2YMS3 (3300 V / 800 A / Dual SiC MOSFET module.) This provides a wide range of product selection. This can be used in 2-level inverters, buck/boost converters and 3-level inverters.
Toshiba will continue to meet the market needs for high efficiency and the downsizing of industrial equipment.
Applications
Industrial equipment
- Inverters and converters for railway vehicles
- Renewable energy power generation systems
- Motor control equipment for industrial equipment, etc.
Features
- Low drain-source on-voltage (sense):
VDS(on)sense=1.3 V (typ.) (ID=800 A, VGS=+20 V, Tch=25 °C) - Low turn-on switching loss:
Eon=230 mJ (typ.) (VDD=1800 V, ID=800 A, Tch=175 °C) - Low turn-off switching loss:
Eoff=230 mJ (typ.) (VDD=1800 V, ID=800 A, Tch=175 °C)
Original – Toshiba
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Infineon Technologies AG launches its new CoolMOS™ S7T product family with an integrated temperature sensor to improve the accuracy of junction temperature sensing. The integration of these products has a positive impact on the durability, safety, and efficiency of many electronic applications. The CoolMOS S7T is best suited for solid-state relay (SSR) applications for enhanced performance and reliability due to its superior R DS(on) and the highly accurate, embedded sensor.
Since SSRs are fundamental components in various electronic devices, customers can benefit in many ways from a superjunction MOSFET with an integrated sensor in the same package. Infineon’s innovative approach improves the relay’s performance and ensures reliable operation even under overload conditions. The integrated temperature sensor provides up to 40 percent greater accuracy and ten times faster response time than a standard independent on-board sensor located at the drain. Additionally, the monitoring process can be performed individually within a multi-device system for improved reliability.
The CoolMOS S7T enables optimal utilization of the power transistor, resulting in enhanced performance and precise control of the output stage. Compared to electromechanical relays, the total power dissipation can be improved up to two times, while current solid state triac solutions are more than 5 times less efficient. Improved efficiency and the ability to handle higher loads help in reducing power consumption and energy costs.
Unique output stage performance, coupled with a significant overcurrent threshold, bolster relay reliability and minimizes the risk of failure and downtime. The rugged switching solution also ensures safer operation. As a result of the MOSFETs increased robustness, the life of the relay is improved, leading to less frequent replacement. Ultimately, all of these benefits translate into lower maintenance costs.
Original – Infineon Technologies
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Efficiency is a big deal for heat pumps and HVAC systems that require higher power from a smaller footprint. The new Vincotech power module 1200V PIM+PFC resolves that contradiction by taking efficiency to a whole other level. Featuring a 3-phase ANPFC and an inverter stage, it enables your engineers to design more deeply integrated systems that drive costs down.
Main Benefits
- All-in-one solution: 3-phase PFC with inverter stage in a compact flow1 housing allows for more compact designs and higher power density
- AN-PFC with SiC MOSFETs and SiC diodes for up to 200 kHz: remarkably efficient topology brings down system costs
- Thin Al2O3 substrate facilitates overall thermal design
- Inverter stage featuring SiC MOSFETs for high-frequency switching
- Integrated thermal sensor simplifies temperature measurement
Applications
- Embedded Drives
- HVAC, Heatpumps
Original – Vincotech
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STMicroelectronics’ MasterGaN1L and MasterGaN4L introduce the next generation of integrated gallium-nitride (GaN) bridge devices that simplify power-supply design leveraging wide-bandgap technology to achieve the latest ecodesign targets.
ST’s MasterGaN family combines 650V GaN high electron-mobility transistors (HEMT) with optimized gate drivers, system protection, and an integrated bootstrap diode that helps power the device at startup. Integrating these features saves designers tackling the complex gate-drive requirements of GaN transistors. Housed in a compact power package, the devices also enhance reliability, cut the bill of materials, and ease circuit layout.
The latest devices contain two GaN HEMTs connected in half-bridge configuration. The arrangement is suitable for building switched-mode power supplies, adapters, and chargers with active-clamp flyback, active-clamp forward, and resonant converter topologies.
The MasterGaN1L and MasterGaN4L are pin compatible with MasterGaN1 and MasterGaN4 respectively. Compared to the earlier devices, they have a newly optimized turn-on delay that allows working at higher frequency and higher efficiency with low load, especially in resonant topologies.
The inputs accept signal voltages from 3.3V to 15V, with hysteresis and pull-down that facilitate connecting directly to a controlling device such as a microcontroller, DSP, or Hall-effect sensors. A dedicated shutdown pin helps designers save system power and the two GaN HEMTs have accurately matched timing with an interlocking circuit to prevent cross-conduction conditions.
The MasterGaN1L HEMTs have 150mΩ RDS(on) and 10A rated current, for use in applications up to 500W. Consuming just 20mW no-load power, and enabling high conversion efficiency, they enable designers to meet stringent industry targets for standby power and average efficiency. The MasterGaN4L HEMTs target applications up to 200W, with 225mΩ RDS(on) and rated current of 6.5A.
The EVLMG1LPBRDR1 and EVLMG4LPWRBR1 demonstration boards are available to help evaluate the features of each device. These boards contain a GaN-based half-bridge power module fine-tuned to work in an LLC application. They help quickly create new topologies leveraging the MasterGaN1L and MasterGaN4L devices without needing a complete PCB design.
Original – STMicroelectronics
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Texas Instruments announced the expansion of its low-power gallium nitride (GaN) portfolio, designed to help improve power density, maximize system efficiency, and shrink the size of AC/DC consumer power electronics and industrial systems. TI’s overall portfolio of GaN field-effect transistors (FETs) with integrated gate drivers addresses common thermal design challenges, keeping adapters cooler while pushing more power in a smaller footprint.
“Today’s consumers want smaller, lighter and more portable power adapters that also provide fast, energy-efficient charging,” said Kannan Soundarapandian, general manager of High Voltage Power at TI.
“With the expansion of our portfolio, designers can bring the power-density benefits of low-power GaN technology to more applications that consumers use every day, such as mobile phone and laptop adapters, TV power-supply units, and USB wall outlets. Additionally, TI’s portfolio also addresses the growing demand for high efficiency and compact designs in industrial systems such as power tools and server auxiliary power supplies.”
The new portfolio of GaN FETs with integrated gate drivers, which includes the LMG3622, LMG3624 and LMG3626, offers the industry’s most accurate integrated current sensing. This functionality helps designers achieve maximum efficiency by eliminating the need for an external shunt resistor and reducing associated power losses by as much as 94% when compared to traditional current-sensing circuits used with discrete GaN and silicon FETs.
TI’s GaN FETs with integrated gate drivers enable faster switching speeds, which helps keep adapters from overheating. Designers can reach up to 94% system efficiency for <75-W AC/DC applications or above 95% system efficiency for >75-W AC/DC applications. The new devices help designers reduce the solution size of a typical 67-W power adapter by as much as 50% compared to silicon-based solutions.
The portfolio is also optimized for the most common topologies in AC/DC power conversion, such as quasi-resonant flyback, asymmetrical half bridge flyback, inductor-inductor-converter, totem-pole power factor correction and active clamp flyback.
To learn more about the benefits of TI GaN for the most common AC/DC topologies, read the technical article, “The benefits of low-power GaN in common AC/DC power topologies.”
TI has a long history of globally owned, regionally diverse internal manufacturing operations, including wafer fabs, assembly and test factories, and bump and probe facilities across 15 worldwide sites. TI has been investing in manufacturing GaN technology for more than 10 years.
With plans to manufacture more than 90% of its products internally by 2030, TI has the ability to provide customers with dependable capacity for decades to come.
Original – Texas Instruments
